13th week of 2015 patent applcation highlights part 16 |
Patent application number | Title | Published |
20150084004 | TRANSFERABLE TRANSPARENT CONDUCTIVE OXIDE - A method for fabricating a photovoltaic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at a weakest interface between the adhesion layer and the substrate by mechanically pulling the release tape to form a transfer substrate including the adhesion layer, the material layer and the release tape. The transfer substrate is transferred to a target substrate to contact the adhesion layer to the target substrate. The transfer substrate includes a material sensitive to formation processes of the transfer substrate such that exposure to the formation processes of the transfer substrate is avoided by the target substrate. | 2015-03-26 |
20150084005 | LEDS WITH IMPROVED LIGHT EXTRACTION - A light extraction structure that includes a composition of a base material and a scattering material disposed within the base material. The scattering material is a metal oxide, and the difference between the refractive indices of the base material and the scattering material is at least +/−0.05. | 2015-03-26 |
20150084006 | OLED Interface - An OLED interface has a panel layer, an anode-electrode layer, a cathode-electrode layer, an organic illuminant layer structure received between the anode-electrode layer and the cathode-electrode layer, and an evaluation circuit. The evaluation circuit is designed and connected in such a way that, together with at least the anode-electrode layer and/or the cathode electrode layer, a sensor system is produced, for detecting a finger or a hand of a user in a region upstream of the panel layer without, or before, the finger or hand touching the OLED interface or a panel element covering same. | 2015-03-26 |
20150084007 | RESIN COMPOSITION AND OPTICAL FILM INCLUDING THE SAME AND HAVING REVERSE WAVELENGTH DISPERSION CHARACTERISTICS - The present disclosure relates to a resin composition comprising a copolymer including: (A) 100 parts by weight of units derived from a polycyclic aromatic monomer including a vinyl group, (B) 100 to 600 parts by weight of units derived from a styrene monomer, (C) 100 to 600 parts by weight of units derived from an acid anhydride monomer, and (D) 150 to 1000 parts by weight of units derived from a (meth)acrylate monomer, and an optical film including the resin composition and having reverse wavelength dispersion characteristics. | 2015-03-26 |
20150084008 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device including a thin film transistor including an active layer, a gate electrode, a source electrode, a drain electrode, a source electrode top layer on the source electrode and a drain electrode top layer on the drain electrode, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes; a pad electrode including a first pad layer at the same level as the source electrode and a second pad layer on the first pad layer and at the same level as the source and drain electrode top layers; a third insulating layer covering end portions of the source, drain, and pad electrodes and including an organic insulating layer; and a pixel electrode in an opening formed in the third insulating layer and including a semi-transmissive metal layer. | 2015-03-26 |
20150084009 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes: a pixel electrode on a substrate; an environmental element on the pixel electrode; a protection insulating layer between the pixel electrode and the environmental element and at a location corresponding to the environmental element; an opposing electrode facing the pixel electrode; and an intermediate layer between the pixel electrode and the opposing electrode and including an organic emission layer. | 2015-03-26 |
20150084010 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate, an organic light-emitting device on the substrate, and a thin film encapsulation layer including a first inorganic film, a first organic film, and fine particles including silica with platinum particles. The fine particles are dispersed on the first organic film, and the thin film encapsulation layer is on the organic light-emitting device. | 2015-03-26 |
20150084011 | ORGANIC MATTER VAPOR DEPOSITION DEVICE AND ORGANIC LIGHT EMITTING DISPLAY MANUFACTURED THEREBY - An organic material deposition device configured to sense a deposition amount of an organic material deposited in a vacuum chamber by detecting a back propagation characteristic variation of a passive radio frequency identification (RFID) sensor. The organic material deposition device includes: a chamber configured to perform an organic material deposition process therein; a deposition source mounted in the chamber to vaporize an organic material; a deposition mask mounted to face the deposition source and configured to bond a substrate at an opposite side to the deposition source; an antenna mounted in the chamber to receive back propagation from a radio frequency identification (RFID) sensor; and a radio frequency (RF) reader connected to the antenna to measure an organic material deposition amount from a variation of the back propagation. | 2015-03-26 |
20150084012 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes a substrate, a display unit on the substrate, a dispersion layer on the display unit, and a thin film encapsulation layer sealing the display unit and the dispersion layer. The dispersion layer has a diffusion coefficient in a horizontal direction that is greater than a diffusion coefficient in a vertical direction. | 2015-03-26 |
20150084013 | ORGANIC SEMICONDUCTOR ELEMENT AND CMIS SEMICONDUCTOR DEVICE INCLUDING THE SAME - There is provided with an organic semiconductor element. The organic semiconductor element has a source electrode portion, a drain electrode portion, an active layer region of an organic semiconductor, a gate insulating film, and a gate electrode portion. The source electrode portion has a multilayer structure where layers are arranged in order of a work function from a lowermost layer region in contact with the active layer region to an uppermost layer region. A work function of a material of the lowermost layer region is closer to a work function of a material of the active layer region than a work function of a material of the uppermost layer region. The lowermost region is made of lanthanum boride (LaB | 2015-03-26 |
20150084014 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF REPAIRING THE SAME - An organic light emitting display device includes a substrate including a display area and a non-display area, a plurality of scan lines extended in a first direction on the substrate, a plurality of data lines extended in a second direction intersecting the first direction, a plurality of first switching elements in the display area, the plurality of first switching elements being connected to the scan lines and data lines, organic emission layers connected to the first switching elements, first dummy lines between corresponding adjacent ones of the plurality of scan lines, the first dummy lines extending in the first direction, second switching elements disposed in the non-display area, the second switching elements being adjacent to first ends of the first dummy lines, and second dummy lines extended in the second direction, the second dummy lines being adjacent to the second switching elements. | 2015-03-26 |
20150084015 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device includes a first substrate having a display region and a peripheral region adjacent to the display region, a plurality of display structures in the display region, the display structures including a plurality of switching elements and a plurality of organic light emitting elements, a plurality of solar cells adjacent to the organic light emitting elements in the display region, and a second substrate opposed to the first substrate. | 2015-03-26 |
20150084016 | ORGANIC ELECTROLUMINESCENT ELEMENT, LIGHT-EMITTING MATERIAL THEREFOR, LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND ILLUMINATION DEVICE - An organic electroluminescent element including a luminescent compound represented by the following formula (in which R | 2015-03-26 |
20150084017 | ORGANIC LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - The embodiment of the present invention relates to an organic light-emitting diode (OLED) device, which comprises a pixel define layer (PDL) and a light-emitting structure. Metal nanoparticles are doped in the PDL. The OLED device improves the luminous efficiency. The embodiment of the present invention further provides a method for manufacturing the OLED device. | 2015-03-26 |
20150084018 | DISPLAY PANEL AND FABRICATING METHOD THEREOF - A display panel and a fabricating method thereof are provided, and the display panel ( | 2015-03-26 |
20150084019 | ARRAY SUBSTRATE AND OLED DISPLAY DEVICE - An array substrate and an organic light-emitting diode (OLED) display device are provided. The array substrate includes: a thin-film transistor (TFT) substrate and a plurality of driver integrated circuits (ICs), the TFT substrate includes a substrate and a plurality of pixel units disposed on one surface of the substrate; and the plurality of driver ICs are disposed on the other surface of the substrate and configured to transmit signals to the pixel units. In the array substrate, the driver ICs can have enough driving capability to drive the pixel units, so that the image brightness displayed by the OLED display device can become more uniform. | 2015-03-26 |
20150084020 | LIGHT-EMITTING DEVICE MATERIAL AND LIGHT-EMITTING DEVICE - Au organic thin film light-emitting element having both high luminous efficiency and high durability can be provided using a light-emitting element material that comprises a compound having a specified carbazole skeleton. | 2015-03-26 |
20150084021 | SEMICONDUCTOR ELEMENT, DISPLAY DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion. | 2015-03-26 |
20150084022 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device according to the invention includes a first pixel electrode; a second pixel electrode; an organic layer including a light emitting layer; a pixel separation layer being interposed between an outer edge portion of the first pixel electrode and an outer edge portion of the second pixel electrode, and the organic layer, and separating a first pixel area and a second pixel area; and a common electrode provided on a side opposite to a side on which the first pixel electrode and the second pixel electrode of the organic layer are provided, wherein a width overlapped between the pixel separation layer and the first pixel electrode in the planar view and a width overlapped between the pixel separation layer and the second pixel electrode in the planar view are greater than a film thickness of the organic layer or a charge transfer layer. | 2015-03-26 |
20150084023 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An insulating layer is disposed in areas between pixel electrodes adjacent to each other so as to rest on peripheries of the pixel electrodes. An organic layer is disposed to include a common layer that continuously covers the pixel electrodes and the insulating layer. A common electrode is disposed on the organic layer. A sealing layer conducts sealing to cover the organic layer and the common electrode. The pixel electrodes have depressed portions whose upper surfaces are recessed on ends including the peripheries of the pixel electrodes. The common layer has depressed portions whose upper surfaces are recessed in correspondence with the depressed portions of the pixel electrodes. The common electrode has depressed portions whose upper surfaces are recessed in correspondence with the depressed portions of the common layer. The sealing layer is curved in correspondence with the depressed portions of the common electrode. | 2015-03-26 |
20150084024 | GLASS STRIP AS A SEAL - An emissive display system includes an electro-optic device having a first substantially transparent substrate including first and second surfaces. At least one of the first and second surfaces includes a first electrically conductive layer. A second substantially transparent substrate includes third and fourth surfaces, at least one including a second electrically conductive layer. A primary seal between the second and third surfaces includes a first epoxy layer and a second epoxy layer. A gasket is disposed between the first and second epoxy layers. The seal and the first and second substrates define a substantially hermetic cavity therebetween. An electro-optic medium is disposed in the cavity and is variably transmissive such that the electro-optic device is operable between substantially clear and darkened states. A substantially transparent light emitting display is disposed adjacent to the electro-optic device, which is converted to the darkened state when the light emitting display is emitting light. | 2015-03-26 |
20150084025 | OLED DISPLAY PANEL - An OLED display panel and manufacturing method of the panel are provided in which a terminal electrode is exposed by performing etching with fixed etching conditions without performing step processing. A terminal region comprised from a plurality of metal electrodes | 2015-03-26 |
20150084026 | DISPLAY DEVICE - Provided is a display device that even in the case where microlenses are formed to increase the light extraction efficiency, can decrease damage on an OLED caused by the production of the microlenses. The display device includes a first substrate; light emitting elements provided on the first substrate and located in correspondence with pixels arrayed in a matrix; a second substrate; a light collection layer provided on the second substrate and including, on the side facing the light emitting elements, at least one convex lens in correspondence with each of the pixels; and a light-transmissive layer that is provided between the first substrate and the second substrate so as to be in contact with the lens and has a refractive index lower than that of the light collection layer. | 2015-03-26 |
20150084027 | ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES - An organic light emitting display device may include a first cover, a protection member disposed on the first cover, a display panel disposed on the protection member, and a second cover disposed on the protection member. The protection member may include a plurality of layers having a plurality of pores, respectively. The protection member may reduce or remove a tolerance generated in manufacturing processes, and also may absorb or remove an external impact. | 2015-03-26 |
20150084028 | Organic Electroluminescent Devices and Metal Complex Compounds - An organic electroluminescent device, which has a pair of electrodes and at least one organic layer including a luminescent layer between the pair of electrodes, wherein at least one layer between the pair of electrodes comprises at least one metal complex having a tridentate- or higher polydentate-chain structure ligand. | 2015-03-26 |
20150084029 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - According to one feature of the invention, a display device comprises a pixel including a first sub-pixel having a first light-emitting element and a second sub-pixel having a second light-emitting element, a first source driver connected to a first source line included in the first sub-pixel, and a second source driver connected to a second source line included in the second sub-pixel. The first sub-pixel and the second sub-pixel are provided over one surface of a light-transmitting substrate, and a first display region using the first sub-pixel over one surface of the substrate and a second display region using the second sub-pixel over the opposite surface the substrate are provided. Accordingly, it is possible to provide a display device that realizes sophistication and a high added value, which includes a display region in each of one and the opposite sides. | 2015-03-26 |
20150084030 | PIXEL CIRCUIT AND DISPLAY DEVICE - A pixel circuit includes: a switching transistor whose conduction is controlled by a drive signal supplied to the control terminal; a drive wiring adapted to propagate the drive signal; and a data wiring adapted to propagate a data signal. The drive wiring is formed on a first wiring layer and connected to the control terminal of the switching transistor. The data wiring is formed on a second wiring layer and connected to a first terminal of the switching transistor. A multi-layered wiring structure is used so that the second wiring layer is formed on a layer different from that on which the first wiring layer is formed. | 2015-03-26 |
20150084031 | NOVEL POLYMERIZABLE MONOMER, AND MATERIAL FOR ORGANIC DEVICE, HOLE INJECTION/TRANSPORT MATERIAL, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE ELEMENT AND ORGANIC ELECTROLUMINESCENT ELEMENT EACH COMPRISING POLYMER (POLYMERIC COMPOUND) OF THE POLYMERIZABLE MONOMER - A polymerizable monomer represented by the following formula (1) wherein at least one of Ar | 2015-03-26 |
20150084032 | DESIGN FOR OLED DISPLAY DEVICE THAT PREVENTS SHORTING OF INTERCONNECTIONS DURING MANUFACTURE THEREOF - An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and a plurality of cladding parts covering at least a portion of each of the plurality of interconnections at a location that corresponds to the sealant, each of the cladding parts including a material having a higher melting point than that of the interconnections. By including the cladding parts, a short circuit between the interconnections caused by heat applied to the sealant can be prevented, and safety and reliability of the OLED display device can be improved. | 2015-03-26 |
20150084033 | LIGHT-EMITTING DEVICE - There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL element that emits red color, and a singlet compound is used for a light emitting layer of an EL element that emits green color and a light emitting layer of an EL element that emits blue color. Thus, an operation voltage of the EL element emitting red color may be made the same as the EL element emitting green color and the EL element emitting blue color. Accordingly, the color display with good color balance can be realized. | 2015-03-26 |
20150084034 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY - An embodiment of the invention provides a thin film transistor substrate includes: a substrate; and a plurality of transistors, wherein each of the transistors includes a gate electrode disposed on the substrate; a first diffusion barrier layer disposed on the substrate and covering an upper surface and a ring sidewall of the gate electrode; a gate insulating layer disposed on the first diffusion barrier layer; an active layer disposed on the gate insulating layer and over the gate electrode; a source electrode disposed on the substrate and electrically connected to the active layer; a drain electrode disposed on the substrate and electrically connected to the active layer; and a protective layer covering the source electrode and the drain electrode. | 2015-03-26 |
20150084035 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes: a substrate; an oxide semiconductor layer disposed on the substrate; a source electrode and a drain electrode each connected to the oxide semiconductor layer and facing each other with respect to the oxide semiconductor layer; an insulating layer disposed on the oxide semiconductor layer; and a gate electrode disposed on the insulating layer. The insulating layer includes a first layer that includes silicon oxide (SiOx), a second layer that is a hydrogen blocking layer, and a third layer that includes silicon nitride (SiNx). The first, second and third layers are sequentially stacked. | 2015-03-26 |
20150084036 | THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A TFT and a fabricating method thereof are provided. The TFT includes an oxide semiconductor layer, a gate insulating layer, a gate, an oxygen-absorbing layer, an insulating layer, and conductive electrodes. The oxide semiconductor layer includes low-oxygen regions and a channel region between the low-oxygen regions. The gate insulating layer is disposed between the oxide semiconductor layer and the gate, and covers the channel region and exposes the low-oxygen regions. The oxygen-absorbing layer having first openings is disposed on the low-oxygen regions each having a first area exposed by the first opening. The insulating layer having second openings covers the oxygen-absorbing layer, the oxide semiconductor layer, and the gate. The low-oxygen region having a second area is exposed by the second opening within the first opening. The second area is smaller than the first area. The conductive electrodes in the second openings are in contact with the low-oxygen regions. | 2015-03-26 |
20150084037 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND ARRAY SUBSTRATE - A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode ( | 2015-03-26 |
20150084038 | INTENSIFIED SENSOR ARRAY FOR STATIC ELECTRICITY - Provided is a intensified sensor array for static electricity having a structure in which a static electricity preventing wiring covers an upper surface of a pixel circuit to cut off static electricity, so when static electricity of a high voltage is momentarily generated, the static electricity induced through the static electricity preventing wiring is discharged, thereby being capable of effectively protecting the pixel circuit of a lower part from the static electricity. | 2015-03-26 |
20150084039 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - This semiconductor device ( | 2015-03-26 |
20150084040 | SEMICONDUCTOR DEVICE AND IMAGING DEVICE - According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer. | 2015-03-26 |
20150084041 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A gate-all-around (GAA) semiconductor device can include a fin structure that includes alternatingly layered first and second semiconductor patterns. A source region can extend into the alternatingly layered first and second semiconductor patterns and a drain region can extend into the alternatingly layered first and second semiconductor patterns. A gate electrode can extend between the source region and the drain region and surround channel portions of the second semiconductor patterns between the source region and the drain region to define gaps between the source and drain regions. A semiconductor oxide can be on first side walls of the gap that face the source and drain regions and can be absent from at least one of second side walls of the gaps that face the second semiconductor patterns. A gate insulating layer can be on the first side walls of the gaps between the gate electrode and the semiconductor oxide. | 2015-03-26 |
20150084042 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a thin film transistor includes a first insulating film, a gate electrode, a semiconductor layer, a gate insulator film, a second insulating film, a source electrode, a tunneling insulating portion, and a drain electrode. The semiconductor layer is provided between the gate electrode and the first insulating film, and includes an amorphous oxide. The gate insulator film is provided between the semiconductor layer and the gate electrode. The second insulating film is provided between the semiconductor layer and the first insulating film. The tunneling insulating portion is provided between the semiconductor layer and the source electrode, and between the semiconductor layer and the drain electrode, and between the first insulating film and the second insulating film. The tunneling insulating portion includes oxygen and at least one selected from aluminum and magnesium. A thickness of the tunneling insulating portion is 2 nanometers or less. | 2015-03-26 |
20150084043 | SEMICONDUCTOR DEVICE - Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y. | 2015-03-26 |
20150084044 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization can be suppressed. The semiconductor device includes a first oxide semiconductor film, a gate electrode overlapping with the first oxide semiconductor film, a first gate insulating film between the first oxide semiconductor film and the gate electrode, and a second gate insulating film between the first gate insulating film and the gate electrode. In the first gate insulating film, a peak appears at a diffraction angle 2θ of around 28° by X-ray diffraction. A band gap of the first oxide semiconductor film is smaller than a band gap of the first gate insulating film, and the band gap of the first gate insulating film is smaller than a band gap of the second gate insulating film. | 2015-03-26 |
20150084045 | SEMICONDUCTOR DEVICE - An oxide semiconductor film with a low density of defect states is formed. In addition, an oxide semiconductor film with a low impurity concentration is formed. Electrical characteristics of a semiconductor device or the like using an oxide semiconductor film is improved. A semiconductor device including a capacitor, a resistor, or a transistor having a metal oxide film that includes a region; with a transmission electron diffraction measurement apparatus, a diffraction pattern with luminescent spots indicating alignment is observed in 70% or more and less than 100% of the region when an observation area is changed one-dimensionally within a range of 300 nm. | 2015-03-26 |
20150084046 | SEMICONDUCTOR DEVICE - A semiconductor device including a transistor and a capacitor which occupies a small area is provided. The semiconductor device includes a semiconductor, first and second conductive films each comprising a region in contact with top and side surfaces of the semiconductor, a first insulating film comprising a region in contact with the top and side surfaces of the semiconductor, a third conductive film comprising a region facing the top and side surfaces of the semiconductor with the first insulating film therebetween, a second insulating film which is in contact with the first conductive film and comprises an opening, a fourth conductive film comprising a region in contact with the opening, a third insulating film comprising a region facing the opening with the fourth conductive film therebetween, and a fifth conductive film comprising a region facing the fourth conductive film with the third insulating film therebetween. | 2015-03-26 |
20150084047 | SEMICONDUCTOR DEVICE - A semiconductor device including a transistor and a capacitor which occupies a small area is provided. The semiconductor device includes a semiconductor, a first and second conductive films each including a first region in contact with a top surface of the semiconductor and a second region in contact with a side surface of the semiconductor, a first insulating film including a third region in contact with the semiconductor, a third conductive film including a fourth region facing the semiconductor with the first insulating film therebetween, and a fourth conductive film comprising a sixth region facing the second region of the first conductive film with the second insulating film therebetween. | 2015-03-26 |
20150084048 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 2015-03-26 |
20150084049 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole. | 2015-03-26 |
20150084050 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 2015-03-26 |
20150084051 | Electronic Device, Test Board, and Semiconductor Device Manufacturing Method - Electrical characteristics of a mounting board over which a semiconductor device is mounted is improved. A mounting board (wiring board) includes a plurality of first through holes and second through holes extending from its upper surface bearing a semiconductor device (semiconductor package) to its lower surface and through-hole wirings formed in the respective through holes. The mounting board has a capacitor arranged on its lower surface and electrically connected with the semiconductor device via second electrodes. Among a plurality of first electrodes formed on the upper surface of the mounting board, the several first electrodes to be connected with the capacitor are connected with one wiring formed in a first through hole with a larger diameter than a signal transmission path. | 2015-03-26 |
20150084052 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a display area comprising a gate line, a data line and a common electrode line, a pixel electrode and a first thin film transistor (TFT) formed in each sub-pixel area defined by the gate line and data line which are crossed with each other; and a test area located at the peripheral of the display area and comprising a first test line, a second test line, a testing electrode and a second TFT, and the common electrode line extending to the test area from the display area, wherein a part of the second test line constitutes a gate electrode of the second TFT; the source electrode of the second TFT is electrically connected with the first test line; a drain of the second TFT is electrically connected with the common electrode line; and the common electrode line is connected with the testing electrode. | 2015-03-26 |
20150084053 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME - Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices. | 2015-03-26 |
20150084054 | PIXEL STRUCTURE OF INORGANIC LIGHT EMITTING DIODE - This disclosure provides a pixel structure of inorganic light emitting diode. A first power line is disposed between two adjacent first sub-pixel and second sub-pixel, and the first sub-pixel and second sub-pixel are electrically connected to the same first power line. Also, a first reference line is disposed on an opposite side of the first sub-pixel away from the second sub-pixel, and a second reference line is disposed on an opposite side of the second sub-pixel away from the first sub-pixel. The first sub-pixel and the second sub-pixel have substantially the same length. | 2015-03-26 |
20150084055 | DISPLAY DEVICE - A display device includes a first substrate having a first step part formed in a frame area on a periphery of a display area, a second substrate arranged facing the first substrate, and a filler material filled between the first substrate in one part of the display area and the frame area, and the second substrate, a periphery edge part being located in a range from the first step part to an end part of the first substrate and the second substrate. | 2015-03-26 |
20150084056 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present disclosure discloses a method for manufacturing a TFT array substrate, comprising: depositing a gate metal layer, a gate insulating layer, a semiconductor layer and a source-drain electrode layer in this order on a base substrate, performing a first photolithograph process to form a common electrode line, a gate line, a gate electrode, a source electrode, a drain electrode and a channel defined between the source electrode and the drain electrode; depositing a passivation layer, performing a second photolithograph process to form a first via hole and a second via hole in the passivation layer; and depositing a pixel electrode layer and a data line layer in this order, perform a third photolithograph process to form a data line connected to the source electrode through the first via hole and a pixel electrode connected to the drain electrode through the second via hole. | 2015-03-26 |
20150084057 | METHOD AND STRUCTURE FOR REDUCING THE PROPAGATION OF CRACKS IN EPITAXIAL FILMS FORMED ON SEMICONDUCTOR WAFERS - A method for reducing the effects of cracks in an epitaxial film. The method includes; providing a semiconductor wafer with an epitaxial film thereon; inspecting the epitaxial film to determine outer peripheral edge regions of the epitaxial film having cracks therein; and selectively removing the determined outer peripheral edge regions of the epitaxial film while leaving portions of the semiconductor wafer underlying the removed determined outer peripheral regions of the epitaxial film. | 2015-03-26 |
20150084058 | LIGHT EMITTING DEVICE GROWN ON A SILICON SUBSTRATE - A method according embodiments of the invention includes growing a semiconductor structure on a substrate including silicon. The semiconductor substrate includes an aluminum-containing layer in direct contact with the substrate, and a III-nitride light emitting layer disposed between an n-type region and a p-type region. The method further includes removing the substrate. After removing the substrate, a transparent material is formed in direct contact with the aluminum-containing layer. The transparent material is textured. | 2015-03-26 |
20150084059 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to an embodiment includes a first GaN based semiconductor layer of a first conductive type, a second GaN based semiconductor layer of the first conductive type provided above the first GaN based semiconductor layer, a third GaN based semiconductor layer of a second conductive type provided above a part of the second GaN based semiconductor layer, a epitaxially grown fourth GaN based semiconductor layer of the first conductive type provided above the third GaN based semiconductor layer, a gate insulating film provided on the second, third, and fourth GaN based semiconductor layer, a gate electrode provided on the gate insulating film, a first electrode provided on the fourth GaN based semiconductor layer, a second electrode provided at the side of the first GaN based semiconductor layer opposite to the second GaN based semiconductor layer, and a third electrode provided on the second GaN based semiconductor layer. | 2015-03-26 |
20150084060 | INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention discloses an insulated gate bipolar transistor (IGBT) and a manufacturing method thereof. The IGBT includes: a gallium nitride (GaN) substrate, a first GaN layer with a first conductive type, a second GaN layer with a first conductive type, a third GaN layer with a second conductive type or an intrinsic conductive type, and a gate formed on the GaN substrate. The first GaN layer is formed on the GaN substrate and has a side wall vertical to the GaN substrate. The second GaN layer is formed on the GaN substrate and is separated from the first GaN layer by the gate. The third GaN layer is formed on the first GaN layer and is separated from the GaN substrate by the first GaN layer. The gate has a side plate adjacent to the side wall in a lateral direction to control a channel. | 2015-03-26 |
20150084061 | SEMICONDUCTOR PHOTO-DETECTING DEVICE - A photo-detecting device includes a first nitride layer, a low-current blocking layer disposed on the first nitride layer, a light absorption layer disposed on the low-current blocking layer, and a Schottky junction layer disposed on the light-absorption layer. The low-current blocking layer includes a multilayer structure. | 2015-03-26 |
20150084062 | MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE - A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer. | 2015-03-26 |
20150084063 | SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER - A semiconductor device includes a substrate, a drift layer over the substrate, a spreading layer over the drift layer, and a pair of junction implants in a surface of the spreading layer opposite the drift layer. An anode covers the surface of the spreading layer opposite the drift layer, and a cathode covers a surface of the substrate opposite the drift layer. By including the spreading layer, a better balance can be struck between the on state resistance of the semiconductor device and the peak electric field in the device, thereby improving the performance thereof. | 2015-03-26 |
20150084064 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP | 2015-03-26 |
20150084065 | SiC SINGLE CRYSTAL SUBSTRATE - A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished surface and 50 nm or more in a direction perpendicular to the polished surface as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 μm in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0. | 2015-03-26 |
20150084066 | HIGH VOLTAGE MOSFET DEVICES AND METHODS OF MAKING THE DEVICES - A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described. | 2015-03-26 |
20150084067 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third region of a second conductivity type SiC provided between the first region and the second region; a Si layer provided on surfaces of the first, second, and third regions, a thickness of-the Si layer on the third region being thicker than a thickness of the Si layer on the second region; a gate insulating film provided on the Si layer; and a date electrode provided on the gate insulating film. | 2015-03-26 |
20150084068 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device of an embodiment includes: an SiC layer; a gate insulating film provided on a surface of the SiC layer, the gate insulating film including an oxide film or an oxynitride film in contact with the surface of the SiC layer, the oxide film or the oxynitride film containing at least one element selected from B, Al, Ga (gallium), In, Sc, Y, La, Mg, Ca, Sr, and Ba, a concentration peak of the element in the gate insulating film being on the SiC side of the gate insulating film, the concentration peak of the element being in the oxide film or the oxynitride film, the gate insulating film having a region with a concentration of the element being not higher than 1×10 | 2015-03-26 |
20150084069 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes Al | 2015-03-26 |
20150084070 | PRE-ROTATED OVERMOULDED BIDIRECTIONAL SPREADING LENS FOR STRETCHED LEADFRAME ARCHITECTURE - A method for manufacturing a solid state light-emitting device (LED) lighting apparatus includes forming a leadframe assembly with a group of leadframes connected in series by folded interconnects, mounting LEDs on the leadframes, disposing optical elements about the LEDs, and stretching the leadframe assembly so the interconnects unfold to space apart the LEDs. Disposing the optical elements includes orienting the optical elements so the optical elements provide a predetermined light pattern after stretching the leadframe assembly. | 2015-03-26 |
20150084071 | LIGHT-EMITTING DEVICE - The light-emitting device of the disclosure includes at least one LED chip and a mounting substrate. The mounting substrate includes: a ceramic substrate; a reflection layer situated on a second surface on the opposite side of the ceramic substrate from a first surface; and a gas barrier layer covering the reflection layer. The LED chip is bonded to the first surface of the ceramic substrate. The ceramic substrate has light diffusion and transmissive properties and has a plan size larger than a plan size of the LED chip. The reflection layer has a plan size smaller than a plan size of the ceramic substrate and is formed so as to cover an area larger than a projected area of the LED chip on the second surface of the ceramic substrate. | 2015-03-26 |
20150084072 | LED PACKAGE STRUCTURES FOR PREVENTING LATERAL LIGHT LEAKAGE AND METHOD OF MANUFACTURING THE SAME - An LED package structure for preventing lateral light leakage includes a substrate unit, a light-emitting unit, a light-transmitting unit and a light-shielding unit. The substrate unit includes a circuit substrate. The light-emitting unit includes at least one LED chip disposed on the circuit substrate and electrically connected to the circuit substrate. The light-transmitting unit includes a light-transmitting gel body disposed on the circuit substrate for enclosing the LED chip. The light-transmitting gel body has a first light-transmitting portion disposed on the circuit substrate for enclosing the LED chip and at least one second light-transmitting portion projected upwardly from the first light-transmitting portion and corresponding to the LED chip, and the second light-transmitting portion has a light output surface. The light-shielding unit includes a light-shielding gel body disposed on the circuit substrate for exposing the light output surface of the second light-transmitting portion. | 2015-03-26 |
20150084073 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element and a substrate including a flexible base, a plurality of wiring portions, a groove portion, and a reflective layer. The flexible base extends in a first direction corresponding to a longitudinal direction of the substrate. The wiring portions are arranged on the flexible base. The groove portion is formed between the wiring portions spaced apart from each other. The groove portion includes a first groove portion extending in a second direction intersecting the first direction. The reflective layer is arranged on the plurality of wiring portions. The light emitting element is disposed near the reflective layer and electrically connected to the plurality of wiring portions. The light emitting element is spaced apart from the first groove portion. | 2015-03-26 |
20150084074 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME - A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate. | 2015-03-26 |
20150084075 | Light-Emitting Module and Luminaire - According to one embodiment, there is provided a light-emitting module including a substrate, a light-emitting body provided on the substrate, and a phosphor containing layer provided on the substrate and the light-emitting body, the phosphor containing layer including a first phosphor excited by emitted light of the light-emitting body, having a light emission peak in a wavelength range equal to or greater than 610 nm and less than 655 nm, and having a surface covered with a protection film. | 2015-03-26 |
20150084076 | Light Emitting Module and Lighting Device - According to one embodiment, a light emitting module includes: a semiconductor light emitting element and an incident suppression section. The semiconductor light emitting element includes a base material and a light emitting layer. The base material is formed of a material absorbing light and is provided on a substrate. The light emitting layer is provided on the base material and emits the light. The incident suppression section is provided around the base material and suppresses light among the light that is emitted from the light emitting layer from being incident on the base material. | 2015-03-26 |
20150084077 | Light Emitting Module and Lighting Device - According to one embodiment, a light emitting module includes a semiconductor light emitting element and a heat radiating section. The semiconductor light emitting element includes a base material and a light emitting layer. The base material is formed of a material absorbing light and is provided on a substrate. The light emitting layer is provided on the base material and emits the light. The heat radiating section is provided around the base material and radiates heat that is generated in the light emitting layer to the substrate by receiving the heat through the base material. | 2015-03-26 |
20150084078 | Light-Emitting Diode Having Diamond-Like Carbon Layer and Manufacturing Method and Application Thereof - A light emitting diode having a diamond-like carbon layer is disclosed, which includes: a substrate; a semiconductor epitaxial multilayer structure deposited over the substrate and including a first semiconductor epitaxial layer and a second semiconductor epitaxial layer, wherein the first and second semiconductor epitaxial layers are stacked with each other; an insulating diamond-like carbon covering partial surface of the semiconductor epitaxial multilayer structure; a first electrode provided with an electrical connection to the first semiconductor epitaxial layer; and a second electrode provided with an electrical connection to the second semiconductor epitaxial layer. A manufacturing method and application of the light-emitting diode are also disclosed. | 2015-03-26 |
20150084079 | PHOSPHOR AND LIGHT-EMITTING DEVICE - A high-brightness phosphor having high-temperature characteristics and long-term reliability, and a white light-emitting device using this phosphor are provided. The phosphor contains a silicate phosphor (A) having a peak wavelength of at least 525 nm but not higher than 535 nm and fluorescence intensity of at least 250% but not higher than 270%; an oxynitride phosphor (B) having a peak wavelength of at least 540 nm but not higher than 545 nm and fluorescence intensity of at least 260% but not higher than 280%; and an oxynitride phosphor (C) having a peak wavelength of at least 645 nm but not higher than 655 nm, wherein the amount of the silicate phosphor (A) is at least 20% but not higher than 35% by mass, the amount of the oxynitride phosphor (B) is at least 50% but not higher than 70% by mass, and the amount of the oxynitride phosphor (C) is at least 10% but not higher than 20% by mass. | 2015-03-26 |
20150084080 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING SAME - There is provided a light-emitting device comprising a light-emitting element and a substrate for light-emitting element. The light-emitting element is in a mounted state on a mounting surface of the substrate, the mounting surface being one of two opposed main surfaces of the substrate. The substrate is provided with a protection element for the light-emitting element, the protection element comprising a voltage-dependent resistive layer embedded in the substrate, and comprising a first electrode and a second electrode each of which is in connection with the voltage-dependent resistive layer. The mounted light-emitting element is in an overlapping relation with the voltage-dependent resistive layer. A reflective layer is provided on at least one of the substrate and the voltage-dependent resistive layer such that the reflective layer is located adjacent to the first electrode which is in contact with a substrate exposure surface of the voltage-dependent resistive layer. | 2015-03-26 |
20150084081 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED USING SAME - The present invention relates to a method for manufacturing a light-emitting device and the light-emitting device manufactured using same, which can reduce manufacturing costs, form nanopatterns in a large area, and increase light extraction efficiency. One embodiment of the present invention discloses the method for manufacturing a light-emitting device, comprising: a light-emitting structure preparation step for preparing a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are formed sequentially; a light extraction layer formation step for forming the upper part of the second conductive semiconductor layer as a light extraction layer having an uneven pattern; a dipping step for dipping the light-emitting structure having the light extraction layer in a solution in which nanomaterials are dispersed; and an adsorption step for adsorbing the nanomaterials to the light extraction layer. | 2015-03-26 |
20150084082 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element includes: an ohmic electrode layer formed on a surface of a semiconductor structure layer including a light-emitting layer; a reflective metal layer containing Ag formed so as to cover at least ends of the ohmic electrode layer; and a covering electrode layer formed so as to bury the reflective metal layer. | 2015-03-26 |
20150084083 | PHOSPHOR, PRODUCTION METHOD OF THE PHOSPHOR, AND LIGHT EMITTING DEVICE USING THE PHOSPHOR - A phosphor is provided which includes a general formula represented by Ca | 2015-03-26 |
20150084084 | LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME - Disclosed are an LED and an LED module. The LED includes: a first conductivity type semiconductor layer; a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a second ohmic-contact structure in contact with the second conductivity type semiconductor layer; a lower insulating layer at least partially covering the mesa and the first conductivity type semiconductor layer and disposed to form a first opening part at least partially exposing the first ohmic-contact structure and a second opening part at least partially exposing the second ohmic-contact structure; and a current distributing layer connected to the first ohmic-contact structure at least partially exposed by the first opening part and disposed to form a third opening part at least partially exposing the second opening part. | 2015-03-26 |
20150084085 | LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME - A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed. | 2015-03-26 |
20150084086 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 2015-03-26 |
20150084087 | Light Emitting Module and Lighting Device - According to one embodiment, there is provided a light emitting module including a board, a semiconductor light emitting element, an electronic component, a first pad, and a second pad. The surface of the first pad on the board is covered with a metal film. The semiconductor light emitting element is mounted on the first pad. The surface of the second pad on the board is covered with a metal film. The electric component is mounted on the second pad. The semiconductor light emitting element is wire-bonded on the first pad covered with the metal film. The electric component is joined by solder on the second pad covered with the metal film. The metal film covering the first pad has a film structure lower in density than the metal film covering the second pad. | 2015-03-26 |
20150084088 | Light-Emitting Diode And Manufacturing Method Therefor - Disclosed is a light-emitting diode with an n-type graded buffer layer and a manufacturing method therefor. An epitaxial structure of a light-emitting diode comprises: a growth substrate; an n-type graded buffer layer located on the growth substrate; an n-type limiting layer ( | 2015-03-26 |
20150084089 | INSULATION STRUCTURE FOR HIGH TEMPERATURE CONDITIONS AND MANUFACTURING METHOD THEREOF - An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is formed on a predetermined portion of the conductive pattern by anodization, the metal oxide layer pattern made of one selected from a group consisting of Al, Ti and Mg. | 2015-03-26 |
20150084090 | MOUNTING SUBSTRATE AND LIGHT EMITTING DEVICE - External connection conductors are arranged on a back surface of a base material, and wiring conductors are arranged on a front surface. An insulating layer is provided on surfaces of the wiring conductors. Component mounting conductors are provided on a surface of the insulating layer. The component mounting conductor and the wiring conductor are electrically coupled to each other, and the component mounting conductor and the wiring conductor are electrically coupled to each other. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between forming areas of the component mounting conductors. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between the forming areas of the component mounting conductors. | 2015-03-26 |
20150084091 | TUNNEL FIELD-EFFECT TRANSISTORS WITH A GATE-SWING BROKEN-GAP HETEROSTRUCTURE - Device structures, fabrication methods, and design structures for tunnel field-effect transistors. A drain comprised of a first semiconductor material having a first band gap and a source comprised of a second semiconductor material having a second band gap are formed. A tunnel barrier is formed between the source and the drain. The second semiconductor material exhibits a broken-gap energy band alignment with the first semiconductor material. The tunnel barrier is comprised of a third semiconductor material with a third band gap larger than the first band gap and larger than the second band gap. The third band gap is configured to bend under an external bias to assist in aligning a first energy band of the first semiconductor material with a second energy band of the second semiconductor material | 2015-03-26 |
20150084092 | OVERVOLTAGE PROTECTION COMPONENTS IN AN OPTOELECTRONIC CIRCUIT ON SOI - An overvoltage protection component may be in a SOI layer, a portion of the SOI layer forming the core of an optical waveguide. This component may be made of semiconductor regions of different doping types and/or levels, at least one of these regions corresponding to at least a portion of the waveguide core. | 2015-03-26 |
20150084093 | Semiconductor Device - A semiconductor device includes: a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth semiconductor region; an insulation film, which is arranged on an inner wall of a recess extending from an upper surface to the second semiconductor region; a control electrode, which is arranged on a region of the insulation film on a side surface of the recess; a first main electrode connected to the first semiconductor region; a second main electrode connected to the fourth semiconductor region; and a bottom electrode, which is arranged on the insulation film and is electrically connected to the second main electrode, and a length of the recess in an extension direction thereof is equal to or larger than a width of the recess, and the width of the recess is wider than an interval between the adjacent recesses. | 2015-03-26 |
20150084094 | SCR COMPONENT WITH TEMPERATURE-STABLE CHARACTERISTICS - An SCR-type component of vertical structure has a main upper electrode formed on a silicon region of a first conductivity type which is formed in a silicon layer of a second conductivity type. The silicon region is interrupted in first areas where the material of the silicon layer comes into contact with the upper electrode, and is further interrupted in second areas filled with resistive porous silicon extending between the silicon layer and the main upper electrode. | 2015-03-26 |
20150084095 | METHOD FOR PRODUCING A TRANSISTOR - The invention concerns a method for producing a transistor. The gate of the transistor is produced after having produced source and drain electrodes of the transistor. From a substrate having a stack of layers comprising at least two surface layers with a first layer of a first semiconductor material intended to produce a conduction channel of the transistor, and a second layer of a second semiconductor material situated on the first layer and intended to at least partly produce the source and drain electrodes of the transistor, the formation of a mask defining a cavity of a gate pattern and the creation of lateral recesses at the periphery of the gate pattern in the second layer and under the mask by an isotropic etching of the second material, and in that it comprises a filling of the lateral recesses with a dielectric material so as to form gate spacers therein. | 2015-03-26 |
20150084096 | FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL EFFECTS WHILE MAXIMIZING CHANNEL STRESS LEVELS - A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects. | 2015-03-26 |
20150084097 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a substrate on which a plurality of logic cells are provided, and a plurality of active portions provided on the substrate and extending in a first direction. Contacts and gate structures extend in a second direction intersecting the first direction and are alternately arranged. A common conductive line extends along a boundary region of the plurality of logic cells in the first direction. At least one of the contacts is electrically connected to the common conductive line through a via therebetween, and each of the contacts intersects a plurality of the active portions. End portions of the contacts are aligned with each other along the first direction. | 2015-03-26 |
20150084098 | PIXEL CIRCUIT FOR GLOBAL SHUTTER OF SUBSTRATE STACKED IMAGE SENSOR - A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip. | 2015-03-26 |
20150084099 | BIOSENSING WELL ARRAY WITH PROTECTIVE LAYER - The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal. | 2015-03-26 |
20150084100 | INTEGRATED CIRCUIT WITH CO2 SENSOR, COMPOSITION AND MANUFACTURING METHOD OF SUCH AN IC - Disclosed is an integrated circuit ( | 2015-03-26 |
20150084101 | MULTI-FIN FINFETS WITH MERGED-FIN SOURCE/DRAINS AND REPLACEMENT GATES - A semiconductor structure including semiconductor fins, a gate over a middle portion of the semiconductor fins, and faceted semiconductor regions outside of the gate separated from gaps may be formed. The semiconductor structure may be formed by forming fins on a semiconductor substrate where each fin has a pair of sidewalls aligned parallel to the length of the fin, growing dummy semiconductor regions on the sidewalls of the fins, forming a sacrificial gate that covers a center portion of the fins and the dummy semiconductor regions, removing portions of the dummy semiconductor regions not covered by the sacrificial gate, and growing faceted semiconductor regions on the sidewalls of the portions of the fins not covered by the sacrificial gate. The faceted semiconductor regions may intersect to form gaps between the faceted semiconductor regions and the gate. | 2015-03-26 |
20150084102 | SEMICONDUCTOR DEVICE - The semiconductor device including: a semiconductor layer extending in a first direction, the semiconductor layer including a pair of source/drain regions and a channel region, a gate extending on the semiconductor layer to cover the channel region, and a gate dielectric layer interposed between the channel region and the gate, a corner insulating spacer having a first surface and a second surface, the first surface extending in the second direction along a side wall of the gate, the first surface covering from a side portion of the gate dielectric layer to at least a portion of the side wall of the gate, and the second surface covering a portion of the semiconductor layer, and an outer portion insulating spacer covering the side wall of the gate above the corner insulating spacer, the outer portion insulating spacer having a smaller dielectric constant than the corner insulating spacer, may be provided. | 2015-03-26 |
20150084103 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a Si substrate having first and second major surfaces facing in opposite directions; a buffer layer of Al | 2015-03-26 |