09th week of 2016 patent applcation highlights part 63 |
Patent application number | Title | Published |
20160064128 | SUPERCONDUCTING COIL DEVICE WITH CONTINUOUS CURRENT SWITCH AND METHOD FOR SWITCHING - A coil device with at least one electrical coil winding with superconducting conductor material and a vacuum container is described in which the vacuum container surrounds the coil winding. The coil winding is part of a self-contained circuit for the formation of a continuous current. The closed circuit has a switchable conductor section, the conductor of which can be switched between a superconducting state and a normally conducting state by a magnetic device. The magnetic device has an internal part arranged inside the vacuum container and an external part arranged outside the vacuum container. | 2016-03-03 |
20160064129 | UNDULATOR WITH DYNAMIC COMPENSATION OF MAGNETIC FORCES - A method and apparatus for implementing dynamic compensation of magnetic forces for undulators are provided. An undulator includes a respective set of magnet arrays, each attached to a strongback, and placed on horizontal slides and positioned parallel relative to each other with a predetermined gap. Magnetic forces are compensated by a set of compensation springs placed along the strongback. The compensation springs are conical springs having exponential-force characteristics that substantially match undulator magnetic forces independently of the predetermined gap. The conical springs are positioned along the length of the magnets. | 2016-03-03 |
20160064130 | Electronic Device With Signal Line Routing To Minimize Vibrations - An electronic device may have a source of magnetic field such as a magnet that produces a static magnetic field. A flexible printed circuit may have a flexible tail that surrounds a central portion. The central portion may overlap the magnet. Electrical components may be mounted to the central portion. To prevent undesired vibrations and noise due to interactions between magnetic fields induced by signals flowing in signal lines in the flexible printed circuit and the static magnetic field, the signal lines may be vertically stacked or may be routed along a curved path that does not overlap the magnet. The tail may serve as a service loop that allows a portion of a housing for the device and electrical components mounted to the central portion in alignment with windows in the housing to be detached for servicing. | 2016-03-03 |
20160064131 | HEAT DISSIPATION DEVICE - A heat dissipation device is applied to an electronic device and comprises a heat conduction plate, at least an induction coil and a first heat dissipation plate. The heat conduction plate receives the heat provided by a heat source and includes a first contact element disposed on a first surface of the heat conduction plate. The induction coil is disposed at the heat conduction plate. The first heat dissipation plate is disposed at the first contact element of the heat conduction plate. The first heat dissipation plate and the heat conduction plate form a gap. The first heat dissipation plate includes at least a first magnetic element disposed opposite the induction coil. | 2016-03-03 |
20160064132 | HIGH TEMPERATURE SOLENOID ACTUATOR - A solenoid actuator includes a housing, a bobbin assembly, a coil, and a washer. The bobbin assembly is disposed at least partially within the housing, and includes a return pole and an armature. The return pole is fixedly coupled to the housing, and the armature is axially movable within the housing. The coil is disposed within the housing and is wound around at least a portion of the bobbin assembly. The washer is disposed between the coil and a portion of the bobbin assembly and surrounds a portion of the return pole. The washer is formed of an electrical insulator material. | 2016-03-03 |
20160064133 | SOLENOID WITH MAGNETIC TUBE AND ARMATURE STABILIZING ELEMENT, AND METHODS OF MAKING AND USING THE SAME - A solenoid can include an armature, a tube including a ferromagnetic tube material, and an armature stabilizing element. The tube can have a radial tube wall with a thickness of less than about 1 mm. | 2016-03-03 |
20160064134 | COOLING DEVICE FOR TRANSFORMER - A cooling device for a transformer, capable of reducing heat generation from windings and a core, is provided. The cooling device for the transformer includes a primary winding and a second winding wound around a center part of the core and separated from each other. A heat-dissipating panel for releasing heat generated from the core, the primary winding, and the secondary winding to the exterior using heat conductance is inserted between the primary winding and the secondary winding. In addition, the heat-dissipating panel is configured to release heat using exposed edges of the primary winding and the secondary winding. | 2016-03-03 |
20160064135 | ELECTROMAGNETIC COIL FOR RETARDER - An electromagnetic coil for a retarder. A lead wire draw out portion includes a holder having a bottom portion through which a lead wire of the electromagnetic coil is passed and a reservoir to be filled with an adhesive. | 2016-03-03 |
20160064136 | COIL COMPONENT - A coil component is constituted by a composite magnetic material containing alloy grains whose oxygen atom concentration in their surfaces is 50 percent or less, and resin, and also by a coil. The coil component using the composite magnetic material does not require high pressure when formed. | 2016-03-03 |
20160064137 | CAPACITIVELY BALANCED INDUCTIVE CHARGING COIL - An inductor coil includes a wire which is wound in alternating layers such that the surface area of the wire in each winding viewed from above or below the coil is substantially equal in each half of the coil defined by a line bisecting the center point in each layer. The layers are also wound in a serpentine fashion to balance the capacitance between layers. The substantially equal surface area of wire in each half of a coil layer and in adjacent coil layers results in a balanced capacitance of the coil which, in turn, results in reduced common mode noise. | 2016-03-03 |
20160064138 | IGNITION COIL FOR INTERNAL COMBUSTION ENGINE - An ignition coil for an internal-combustion engine, including an assembly of a primary coil, a secondary coil, and a central core, and a ring-shaped outer core surrounding the assembly. The assembly includes at least one first protrusion protruding from a first end surface of the secondary spool. The at least one first protrusion is in contact with an inside surface of the outer core and offset from the central core toward an opening of the outer core in a penetration direction of the outer core. The assembly further includes at least one second protrusion protruding from a second end surface of the primary spool. The at least one second protrusion protrudes beyond a second axial end surface of the central core so as to be in contact with the inside surface of the outer core and extends substantially the entire length of the outer core in the penetration direction. | 2016-03-03 |
20160064139 | COMPOSITE MAGNETIC COMPONENT - A composite magnetic component is provided. The composite magnetic component includes a magnetic flux-guiding unit, a first coil structure and a second coil structure. The first coil structure and the second coil structure are wound around a first winding portion and a second winding portion of the magnetic flux-guiding unit, respectively. A first magnetic flux results from the first coil structure and the magnetic flux-guiding unit. A second magnetic flux results from the second coil structure and the magnetic flux-guiding unit. The first magnetic flux is orthogonal to the second magnetic flux within the magnetic flux-guiding unit. | 2016-03-03 |
20160064140 | TRANSFORMER - A bond-wire transformer for an RF device is described. The primary and secondary circuits of the bond-wire transformer are formed using loops formed with a pair of normal profile and low profile bond-wires. This results in improved efficiency and higher power operation. | 2016-03-03 |
20160064141 | MAGNETICALLY DOPED ADHESIVE FOR ENHANCING MAGNETIC COUPLING - In some embodiments, an electronic device includes an electronic component that is at least partially encapsulated by an adhesive doped with soft magnetic material that functions as an EMI shield for the electronic component. In various embodiments, an electronic device includes a first magnetic component separated from a second magnetic component by a gap within which is positioned an adhesive doped with soft magnetic material. The doped adhesive is positioned in a magnetic path between the first and second magnetic components and aids in magnetically coupling the first and second magnetic components and/or guides magnetic flux between the first and second magnetic components. | 2016-03-03 |
20160064142 | TRANSFORMER WITH INTEGRATED FLUID FLOW SENSOR - A fluid-cooled transformer includes a primary winding, a secondary winding, a fluid flow path, and a flow sensor that is both operatively coupled to the fluid flow path and protectively positioned within the transformer. | 2016-03-03 |
20160064143 | Non-Contact Power Supply Circuit - A power supply circuit is disclosed. The power supply circuit includes a primary circuit having at least one transmitting coil and a secondary circuit having at least one receiving coil. The primary circuit and secondary circuit are electromagnetically coupled. The total quantity of the at least one transmitting coil and the at least one receiving coil is greater than two. | 2016-03-03 |
20160064144 | Method of Making Nd-Fe-B Magnetic Materials with Reduced Heavy Rare Earth Metals - A method of making a magnetic material includes a step of providing a first material in the form of a core powder containing Nd, Fe and B. The first material is combined with the second material to form a powder combination. The second material includes a component selected from the group consisting of Dy, Tb, and combinations thereof. The powder combination is encapsulated to form an encapsulated powder combination. A magnetic field is applied to the powder combination during encapsulation and thereafter to align the magnetic dipoles therein. The encapsulated powder combination is isostatically pressed with heat to form the magnetic material. | 2016-03-03 |
20160064145 | MANUFACTURING METHOD OF RARE-EARTH MAGNET - A manufacturing method of a rare-earth magnet includes: manufacturing a sintered body having by performing pressing on a magnetic powder for a rare-earth magnet; and manufacturing a rare-earth magnet by putting the sintered body in a plastic working mold and by performing hot plastic working on the sintered body while pressing the sintered body to give anisotropy to the sintered body. The sintered body has a cuboid shape and includes at least one recessed side face that has a recessed portion curved inward. The plastic working mold includes a lower die, a side die forming a rectangular frame of four side faces, and an upper die slidable in the side die. The hot plastic working is hot upsetting. | 2016-03-03 |
20160064146 | CAPACITOR - The present invention relates to a capacitor. The capacitor includes a substrate; a dielectric layer formed on the substrate; and an electrode layer comprising a first electrode layer and a second electrode layer formed on the dielectric layer, wherein the first electrode layer and the second electrode layer are separated from each other, and at least a portion of the first electrode layer and at least a portion of the second electrode layer are disposed on a same surface. With this configuration, applying the electricity becomes easy, and since the first and the second electrode layers function as the electrodes being charged with different polarity electrical charges respectively, manufacturing thereof becomes easy, and the structure thereof is simple. | 2016-03-03 |
20160064147 | ELECTRODE FORMING FILM AND FILM CAPACITOR USING THE SAME - An electrode forming film includes: a dielectric film; an electrode head part; a first common electrode connected with the electrode head part; a plurality of first split electrodes spaced apart from the first common electrode in the first direction; a second common electrode spaced apart from the first split electrodes in the first direction; a plurality of second split electrodes spaced apart from the second common electrode in the first direction; a plurality of first fuse parts formed between the first common electrode and the first split electrodes; a plurality of second fuse parts formed between the first split electrodes and the second common electrode; and a plurality of third fuse parts formed between the second common electrode and the second split electrodes. | 2016-03-03 |
20160064148 | VARIABLE CAPACITANCE DEVICE AND ANTENNA DEVICE - A variable capacitance device includes: a supporting substrate having a plurality of variable capacitance elements formed thereon, the plurality of variable capacitance elements being connected in series, wherein each of the plurality of variable capacitance elements has a separate lower electrode, or at least some of the plurality of variable capacitance elements share a lower electrode, thereby forming a plural set of the lower electrodes that serves as the lower electrodes of the respective variable capacitance elements, wherein the variable capacitance device further includes an insulating moisture-resistant film and a conductive adhesive film, and wherein the conductive adhesive film and the insulating moisture-resistant film have a gap in a plan view between at least some of regions where the plural set of the lower electrodes are respectively formed so as to avoid electrical leakage between said at least some of regions through the conductive adhesive film. | 2016-03-03 |
20160064149 | METHOD OF PRODUCING A SUPER-CAPACITOR - A method of fabricating a super-capacitor provides a substrate, and then adds an electrode and electrolyte template film, having a well for receiving the electrode, to the substrate. The method also adds a second electrolyte to the electrode and electrolyte template. | 2016-03-03 |
20160064150 | METHOD FOR PRODUCING LOW-OXYGEN VALVE-METAL SINTERED BODIES HAVING A LARGE SURFACE AREA - A process for producing a sintered body includes pressing a powder comprising or consisting of at least one valve metal so as to provide a pellet, providing the pellet together with a reducing agent so that the pellet is not in a direct contact with and does not come into a direct contact with the reducing agent, heating so that the powder in the pellet is sintered to form a sintered body, an oxygen content of the at least one valve metal within the sintered body is simultaneously reduced, and the reducing agent is oxidized to an oxidized reducing agent, and removing the oxidized reducing agent with at least one mineral acid. | 2016-03-03 |
20160064151 | ELECTROLYTIC CAPACITOR AND MANUFACTURING METHOD THEREFOR - An electrolytic capacitor includes a capacitor element, and an electrolyte solution with which the capacitor element is impregnated. The capacitor element includes an anode foil having a dielectric layer on a surface thereof, and a solid electrolyte layer including a conductive polymer and in contact with the dielectric layer of the anode foil. The electrolyte solution contains at least one of polyalkylene glycol and a derivative of polyalkylene glycol, and at least one of diphenyl amine, naphthol, nitrophenol, catechol, resorcinol, hydroquinone, and pyrogallol. | 2016-03-03 |
20160064152 | NANOMACHINED STRUCTURES FOR POROUS ELECTROCHEMICAL CAPACITORS - Embodiments of the invention describe energy storage devices, porous electrodes, and methods of formation. In an embodiment, an energy storage device includes a porous structure containing multiple main channels that extend into an electrically conductive structure at an acute angle. In an embodiment, an energy storage device includes a porous structure containing an array of V-groove or pyramid recesses. | 2016-03-03 |
20160064153 | ENERGY STORAGE DEVICE - An energy storage device comprises a capacitor having a dielectric between opposite electrodes and a nonconductive coating between at least one electrode and the dielectric. The nonconductive coating allows for much higher voltages to be employed than in traditional EDLCs, which significantly increases energy stored in the capacitor. Viscosity of the dielectric material may be increased or decreased in a controlled manner, such as in response to an applied external stimulus, to control discharge and storage for extended periods of time. | 2016-03-03 |
20160064154 | NEGATIVE ELECTRODE OF POWER STORAGE DEVICE AND POWER STORAGE DEVICE - A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO | 2016-03-03 |
20160064155 | Super-Capacitor with Separator and Method of Producing the Same - A method of producing a super-capacitor provides a first substrate having a first base, forms a first electrode on the first substrate, and forms a separator so that the electrode is between the first base and the first separator. The method also micromachines holes through the separator, forms a chamber, and adds electrolyte, having ions, to the chamber. The electrolyte is in contact with the first electrode within the chamber. In addition, the holes are sized to permit transmission of the ions of the electrolyte through the holes. | 2016-03-03 |
20160064156 | High-Performance Supercapacitors Based on Metal Nanowire Yarns - An energy-storage device is formed from a first and a second yarn, each yarn including a plurality of nanowires including aluminum and/or a transition metal. An anode pad is in contact with the first yarn and a cathode pad is in contact with the second yarn. Alternatively, first and second metallic electrodes may be disposed substantially in parallel, with pluralities of nanowires including aluminum and/or a transition metal extending therefrom. In another embodiment, a supercapacitor may include a niobium yarn including a plurality of niobium nanowires. Each niobium nanowire may include at least (i) a first section comprising at least one of unoxidized niobium and niobium oxide; (ii) a second section comprises a niobium pentoxide layer; and (iii) a third section comprises a layer formed by coating the niobium nanowire in at least one of a conductive polymer and a liquid metal. | 2016-03-03 |
20160064157 | RIVET CONTACT AND METHOD FOR PRODUCING SAME - The present invention is a rivet contact including a head portion and a foot portion having a smaller width than the head portion, wherein the head portion contains a contact material layer having at least a top containing an Ag-based contact material; the rest of the head portion and the foot portion contain a base material containing Cu or a Cu alloy; and a barrier layer including an Ag alloy is provided at a junction interface between the contact material and the base material. Here, an Ag alloy obtained in such a manner that one or more base metal elements of Sn, In, Cu, Ni, Fe, Co, W, Mo, Zn, Cd, Te, and Bi are added to Ag by 0.03 to 20 mass % is preferably used as the Ag alloy constituting the barrier layer. | 2016-03-03 |
20160064158 | SWITCH HAVING IMPROVED MOVEABLE CONTACT - An electrical switch ( | 2016-03-03 |
20160064159 | SWITCH HAVING IMPROVED COVER - An electrical switch ( | 2016-03-03 |
20160064160 | 4-Switch Extended Commutation Cell - The extended commutation cell (ECC) is a four-port, four-switch cell that allows for bidirectional energy transport in two orthogonal directions throughout the cell. By cascading multiple cells, a multilevel converter can be constructed with a high number of levels. The voltage across each cell capacitor can be adjusted independently of the load, resulting in high flexibility in output levels. Improved fault tolerance is also provided. | 2016-03-03 |
20160064161 | HIGH VOLTAGE SWITCHING CIRCUIT - A switching circuit includes: an electronic switch comprising one or more diodes for switching a capacitor within an electronic variable capacitor array; a first power switch receiving a common input signal and a first voltage input; and a second power switch receiving the common input signal and a second voltage input, wherein the second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch asynchronously connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal, the one or more diodes being switched according to the first voltage input or the second voltage input connected to the common output. | 2016-03-03 |
20160064162 | Pushbutton Switch - A pushbutton switch includes a pushbutton unit and a resilient member. The pushbutton unit includes a mounting seat for being in proximity to an activator of a switch assembly, and a pushbutton covering the mounting seat. The resilient member has a switch contactor adjacent to the activator, two resilient arms extending from the switch contactor, and two abutment segments connected respectively to the resilient arms and engaging the limiting seat. When the pushbutton is pressed to move toward the limiting seat, the resilient arms are resiliently deformed to have a resilient force for urging the pushbutton away from the limiting seat, and the switch contactor is driven by the pushbutton to contact and move the activator. | 2016-03-03 |
20160064163 | PUSH-TYPE SWITCH - A push-type switch includes a cap lid made of a light permeable material, a shielding board, a holding board, a movable seat, a display module disposed between the cap lid and the movable seat, a lighting element disposed in the movable seat, a conducting unit having a conducting element being flexible and a plurality of conducting terminals, and a housing. When the cap lid is being pushed downward, the movable seat moves concurrently to depress the conducting element, whereby the conducting element being deformed to electrically contact the conducting terminals so as to switch on and off the push-type switch, and the lighting element and the display module being capable of emitting light and displaying images respectively according to the state of switch and electrical signals transmitted from a printed circuit board to the lighting element and the display module. | 2016-03-03 |
20160064164 | KEY APPARATUS - A key apparatus includes a housing, a printed circuit board (PCB), a fixing mechanism, and a key mechanism. The fixing mechanism mounted on the PCB. The key mechanism is rotatably fixed on the fixing mechanism. Partial of the key mechanism is exposed from the housing. The fixing mechanism comprises a resistor portion for providing a changeable resistance to the PCB. The key mechanism drives the resistor portion to rotate simultaneously for changing a resistance of resistor portion provided to the PCB. A rotating axis of the key mechanism is coaxial with a rotating axis of the resistor portion. | 2016-03-03 |
20160064165 | KEYSWITCH STRUCTURE - The keyswitch structure uses two linkages form as V-shaped to support a keycap when the keycap is moved up and down. A first linkage and a second linkage are coupled with each other and also coupled with a support on a base respectively in a line contacting way, thereby forming a first axis, a second axis, and a third axis. The third axis is located between the first axis and the second axis. As the keycap is pressed to move downward, the keycap brings the two linkages and the support of the base to have relative rotation movement. Due to the geometric feature between the three axes, part of the linkages between the axes or the support of the base may be caused to slightly deform to provide a resilient restoring force that can move the keycap upward to a position not being pressed. | 2016-03-03 |
20160064166 | SWITCH WITH USER FEEDBACK - A switch includes a substrate that has a contact area on a first face. At least one first conductor is located in the substrate and extends onto the contact area. At least one second conductor is located in the substrate and extends onto the contact area. A sensor is configured to detect when a user contacts the contact area. | 2016-03-03 |
20160064167 | TOUCH AND/OR PROXIMITY-SENSITIVE ACTUATION ELEMENT AND DOMESTIC APPLIANCE HAVING AN ACTUATION ELEMENT - A touch and/or proximity-sensitive actuation element has an electrically non-conductive housing, which has a fastening portion for the stationary and non-rotational mounting of the actuation element and a substantially cylindrical detection portion, which defines a touch and/or proximity-sensitive detection region of the actuation element, at which a rotary movement of a user around the actuation element can be detected. A plurality of electrically conductive sensor elements are arranged in the housing spaced apart from one another along a lateral surface of the detection portion. A printed circuit board is provided and has a plurality of contact faces, which are each electrically conductively in contact with one of the plurality of sensor elements. | 2016-03-03 |
20160064168 | AIR BREAK ELECTRICAL SWITCH HAVING A BLADE TOGGLE MECHANISM - An electrical switch includes a pivotally supported blade, a toggle mechanism, and an operating mechanism. The operating mechanism is drivable in a first direction to pivot the blade about a first axis and toward a closed blade position. When pivoting toward the closed blade position, the toggle mechanism inhibits the blade from pivoting about a second axis. Upon reaching the closed blade position, continued motion of the operating mechanism in the first direction causes the toggle mechanism to pivot the blade about the second axis toward a closed contact position. In the closed contact position, the blade contacts at least one blade contact to electrically connect the blade and a first electrical terminal. | 2016-03-03 |
20160064169 | ARC EXTINGUISHING CONTACT ASSEMBLY FOR A CIRCUIT BREAKER ASSEMBLY - An arc extinguishing contact assembly for a circuit breaker assembly is provided. The arc extinguishing contact assembly includes a fixed contact assembly, a movable contact assembly and an arc extinguishing assembly. The fixed contact assembly includes a fixed arc contact assembly, a fixed main contact assembly, and a number of movable, intermediate arc contact assemblies. The movable contact assembly includes a movable arc contact assembly and a movable main contact assembly. The arc extinguishing assembly is structured to extinguish an arc generated as the movable contact assembly moves between an open, first position and a closed, second position. | 2016-03-03 |
20160064170 | ARC EXTINGUISHING CONTACT ASSEMBLY FOR A CIRCUIT BREAKER ASSEMBLY - An arc extinguishing contact assembly for a circuit breaker assembly is provided. The arc extinguishing contact assembly includes a fixed contact assembly, a movable contact assembly and an arc extinguishing assembly. The fixed contact assembly includes a fixed arc contact assembly, a fixed main contact assembly, and a number of movable, intermediate arc contact assemblies. The movable contact assembly includes a movable arc contact assembly and a movable main contact assembly. The arc extinguishing assembly is structured to extinguish an arc generated as the movable contact assembly moves between an open, first position and a closed, second position. | 2016-03-03 |
20160064171 | Switch Assembly, A Switching Device Comprising A Switch Assembly, A Switchgear Comprising A Switching Device And A Method For Cooling - A switch assembly including a vacuum switch mounted to an at least partly electrically conductive housing, and a holder for a vacuum bottle. The housing includes at least one gas entry opening at a lower end of the housing and at least one gas exit opening at an upper end of the housing, and a first free heat convection path between the openings to provide cooling. A second free heat convection path may be provided in a free space between the holder and vacuum bottle. A switching device for connecting the vacuum switch to a second electric conductor. An electric power distribution switchgear, encapsulating at least one three-phase module including a switching device. | 2016-03-03 |
20160064172 | PLUNGER SWITCH ASSEMBLY AND METHOD OF OPERATION - A switch assembly has a housing with a passage extending along a longitudinal axis. A plunger positioned within the passage is movable along the axis relative to the housing between an extended position protruding a first axial distance out of the housing and a depressed position protruding a second axial distance out of the housing less than the first distance. A magnetic biasing device biases the plunger towards the extended position. The magnetic biasing device includes a first magnetic member secured to the housing and a second magnetic member secured to the plunger and movable with the plunger relative to the first magnetic member. An electrical component positioned within the passage has a pair of terminal members and a sensor. | 2016-03-03 |
20160064173 | FUSE FOR HIGH-VOLTAGE APPLICATIONS - A current-limiting fuse for use at voltages between 23 kilovolts (kV) and 38 kV includes a body including a sidewall that at least partially defines an interior space; a fuse element in the interior space of the body, the fuse element wrapped around a non-conductive core and connected to first and second electrically conductive plates; and a non-bound particulate material in the interior space of the body, the non-bound particulate material including a plurality of pieces of the material with voids between at least some of the pieces. A fuse holder for use at voltages between 23 kV and 38 kV includes a housing for insertion in a sidewall of a transformer. The housing includes an exterior surface that defines an interior region. A fuse assembly is received in the interior region of the housing, the fuse assembly being configured to be replaced without opening the tank of the transformer. | 2016-03-03 |
20160064174 | ELECTRON GUN SUPPORTING MEMBER AND ELECTRON GUN APPARATUS - An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member. | 2016-03-03 |
20160064175 | STRUCTURED TARGETS FOR X-RAY GENERATION - Disclosed are targets for generating x-rays using electron beams and their method of fabrication. They comprise a number of microstructures fabricated from an x-ray target material arranged in close thermal contact with a substrate such that the heat is more efficiently drawn out of the x-ray target material. This allows irradiation of the x-ray generating substance with higher electron density or higher energy electrons, leading to greater x-ray brightness, without inducing damage or melting. The microstructures may comprise conventional x-ray target materials (such as tungsten) that are patterned at micron-scale dimensions on a thermally conducting substrate, such as diamond. The microstructures may have any number of geometric shapes to best generate x-rays of high brightness and efficiently disperse heat. In some embodiments, the target comprising microstructures may be incorporated into a rotating anode geometry, to enhance x-ray generation in such systems. | 2016-03-03 |
20160064176 | COOLING MECHANISM FOR HIGH-BRIGHTNESS X-RAY TUBE USING PHASE CHANGE HEAT EXCHANGE - A mechanism for cooling the anode of an x-ray tube using a phase change material to transfer heat away from the anode. The x-ray tube is joined to a sealed heat exchange chamber which contains a liquid metal as a liquid to vapor phase change material (L-V PCM). The back side of the anode is exposed to an interior of the heat exchange chamber, and a jet sprayer inside the heat exchange chamber sprays a liquid of the metal onto the back side of the heated anode. The L-C PCM evaporates on that surface to carry away the heat, and the vapor then condenses back into the liquid on the cool surfaces of the heat exchange chamber. The surfaces of the heat exchange chamber may be cooled by convection cooling. Optionally, pipes containing a circulating cooling fluid may be provide inside the heat exchange chamber. | 2016-03-03 |
20160064177 | X-RAY SOURCE AND IMAGING SYSTEM - An evacuable outer housing having at least one X-ray-permeable beam exit window, an electron source, an anode and a collector for catching electrons which penetrate the anode are included as an X-ray source. The collector is part of an electrical current circuit for applying a negative potential to the anode, and the radiation window is disposed such that X-ray radiation which exits from the anode at an angle of 130 degrees to 230 degrees to the electron beam direction can be coupled out through the radiation window. An imaging system includes such an X-ray, an arrangement to accommodate an object to be examined, and an X-ray detector. | 2016-03-03 |
20160064178 | BLANKING DEVICE FOR MULTI CHARGED PARTICLE BEAMS, AND MULTI CHARGED PARTICLE BEAM WRITING APPARATUS - A blanking device for multi-beams includes a substrate, a dielectric film formed on the substrate, plural first electrodes, at positions each exposed in a corresponding opening, to be applied with a first deflection potential, plural second electrodes, at positions each opposite to a corresponding first electrode with respect to the corresponding opening, to be applied with a second deflection potential, including a ground potential, for deflecting a corresponding beam of the multi-beams by a difference between the first and second deflection potentials, and a conductive film arranged in, other than plural first regions on the dielectric film each along a corresponding first electrode and being shaded by each first electrode in a case of being viewed from a position where a corresponding beam passes through a corresponding opening, a second region on the dielectric film, wherein insulation is provided between the plural first and second electrodes. | 2016-03-03 |
20160064179 | BLANKING DEVICE FOR MULTI CHARGED PARTICLE BEAMS, MULTI CHARGED PARTICLE BEAM WRITING APPARATUS, AND DEFECTIVE BEAM BLOCKING METHOD FOR MULTI CHARGED PARTICLE BEAMS - A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential. | 2016-03-03 |
20160064180 | Apparatus of Plural Charged Particle Beams with Multi-axis Magnetic Lenses - A new apparatus of plural charged particle beams with multi-axis magnetic lenses is provided, which comprises a plurality of sub-columns The apparatus employs two modified multi-axis magnetic lenses, and magnetic sub-lenses thereof therefore function as the objective lenses and the condenser lenses of all the sub-columns respectively. The plurality of sub-columns can perform the same function or different functions required for observing a surface of a specimen, such as high-throughput inspection and high-resolution review of interested features thereon. Accordingly, the apparatus can be used as a yield management tool in semiconductor manufacturing industry. | 2016-03-03 |
20160064181 | Device for Nanoscale Sample Manipulation - A manipulating device for manipulating sample objects having dimensions between about 10 nm and 10,000 nm. The device is attached to a top plate of a microscope, wherein the top plate moves along a Z-axis. The device further has first and second arms attachable to said top plate, wherein when attached the first and second are positioned relative to one another to grasp a sample object. The first and second arms are adapted to move along an X-axis and a Y-axis. The device further has a controller adapted to control movement of the first and second arms. | 2016-03-03 |
20160064182 | CHARGED PARTICLE BEAM APPARATUS AND IMAGE GENERATION METHOD - There is provided a charged particle beam apparatus radiating a charged particle beam to a specimen so as to acquire an image of the specimen, the charged particle beam apparatus including: a charged particle gun that generates the charged particle beam; an electron optical system that radiates the charged particle beam emitted from the charged particle gun onto a surface of the specimen so as to scan the surface of the specimen; a detecting unit that detects secondary electrons or reflection electrons emitted from the specimen, and converts the electrons into pulse signals; a pulse signal detecting circuit that detects time detecting information regarding time of the pulse signals converted by the detecting unit, and peak value detecting information regarding each peak value of the pulse signals; and an image processing unit that generates luminance gradation of the acquired image based on a time detecting signal and a peak value detecting signal of the pulse signals detected by the pulse signal detecting circuit. | 2016-03-03 |
20160064183 | Electron Microscope and Sample Observation Method - An electron microscope includes a secondary electron detector ( | 2016-03-03 |
20160064184 | Scanning Electron Microscope And Methods Of Inspecting And Reviewing Samples - A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such an unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described. | 2016-03-03 |
20160064185 | IMAGING APPARATUS HAVING A PLURALITY OF MOVABLE BEAM COLUMNS, AND METHOD OF INSPECTING A PLURALITY OF REGIONS OF A SUBSTRATE INTENDED TO BE SUBSTANTIALLY IDENTICAL - An apparatus for inspecting a substrate is described. The apparatus includes an X-Y stage that supports a substrate to be inspected and is operable to move a substrate supported thereby in X and Y directions; and an imaging system including a plurality of beam columns operable to irradiate regions of a substrate supported by the X-Y stage with beams of energy, respectively, discrete from one another. Respective ones of the beam columns are movable relative to others of the electron beam columns. | 2016-03-03 |
20160064186 | BIAS ELECTRODES FOR TANDEM ACCELERATOR - A tandem accelerator and ion implanter with improved performance is disclosed. The tandem accelerator includes a plurality of input electrodes, a plurality of output electrodes and a high voltage terminal disposed therebetween. The high voltage terminal includes a stripper tube. Neutral molecules are injected into the stripper tube, which remove electrons from the incoming negative ion beam. The resulting positive ions are accelerated toward the plurality of output electrodes. To reduce the amount of undesired positive ions that exit the stripper tube, bias electrodes is disposed at the entrance and exit of the stripper tube. The bias electrodes are biased a second voltage, greater than the first voltage applied to the terminal. The bias electrodes repel slow moving positive ions, preventing them from exiting the stripper tube and contaminating the workpiece. | 2016-03-03 |
20160064187 | CHARGED PARTICLE BEAM APPARATUS | 2016-03-03 |
20160064188 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame. | 2016-03-03 |
20160064189 | PLASMA PROCESSING APPARATUS - A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding/evacuation conduit including a feeding-path that communicates with the port and through which gas fed to the gap flows, an evacuation-path that communicates with the opening and through which gas fed to the gap is discharged, and a connection-path through which the feeding-path and the evacuation-path communicate. With communication between the feeding-path and the evacuation-path via the connection-path interrupted, gas from the feeding-path is fed to the gap and into the through-hole via the gap. | 2016-03-03 |
20160064190 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided. | 2016-03-03 |
20160064191 | ION CONTROL FOR A PLASMA SOURCE - One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes. | 2016-03-03 |
20160064192 | METHOD FOR SUPPLYING GAS, AND PLASMA PROCESSING APPARATUS - In the exemplary embodiment, a method for supplying a gas is provided. This method includes supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve. | 2016-03-03 |
20160064193 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A semiconductor manufacturing apparatus includes a lower electrode, an upper electrode, first and second high-frequency power sources, and a controller. The lower electrode is disposed in a process chamber, and the upper electrode is disposed over the lower electrode in the process chamber. The first high-frequency power source is connected to one of the lower electrode and the upper electrode, and the second high-frequency power source is connected to one of the lower electrode and the upper electrode. The controller is connected to the first and second high-frequency power sources. The first high-frequency power source generates a first high-frequency power used to perform a first capacitively coupled plasma (CCP) process. The second high-frequency power source generates a second high-frequency power used to perform a second CCP process. The controller controls the second high-frequency power source to interrupt the second high-frequency power during the first CCP process. | 2016-03-03 |
20160064194 | SEMICONDUCTOR FABRICATING APPARATUS AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - The disclosure provides a semiconductor fabricating apparatus and a method of fabricating a semiconductor device using the same. In some embodiments, the apparatus may synchronize low-frequency, high-frequency and direct current (DC) powers that are applied to an electrode. The low-frequency power may have a non-sinusoidal waveform. Thus, reliability and reproducibility of a semiconductor fabrication process may be improved. In other embodiments, the apparatus may include a first low-frequency power generator generating a first low-frequency power having a sinusoidal waveform and a second low-frequency power generator generating a second low-frequency power having a non-sinusoidal waveform. | 2016-03-03 |
20160064195 | Plasma Treatment Of An Elastomeric Material For Adhesion - Elastomeric components, such as a shoe outsole, are treated with a plasma application to clean and activate the elastomeric component. The application of plasma is controlled to achieve a sufficient surface composition change to enhance adhesion characteristics while not adversely physically deforming the elastomeric component. The plasma treatment is applied to increase carbonyl functional group concentrations within an altered region of the elastomeric component to within at least a range of 2%-15% of carbon atomic percentage composition. The cleaning and activation is controlled, in part, by ensuring a defined height offset range is maintained between the elastomeric component and the plasma source by a generated tool path. The elastomeric component may then be adhered, with an adhesive, to another component. | 2016-03-03 |
20160064196 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame. | 2016-03-03 |
20160064197 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL - The present disclosure provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region. | 2016-03-03 |
20160064198 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes a process chamber; a process gas supply unit that supplies process gas to the process chamber; a decompressing mechanism that decompresses the process chamber; a plasma excitation device that generates plasma in the process chamber; a stage in the chamber, on which the transport carrier is loaded; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and that has a window section through which the substrate is partly exposed to plasma; a correction member that presses the frame onto the stage and corrects warpage of the frame; and a movement device that moves the correction member. The correction member is provided separately from the cover to be covered by the cover. | 2016-03-03 |
20160064199 | System, Method and Apparatus for Using Optical Data to Monitor RF Generator Operations - A system and method monitoring a plasma with an optical sensor to determine the operations of a pulsed RF signal for plasma processing including a plasma chamber with an optical sensor directed toward a plasma region. An RF generator coupled to the plasma chamber through a match circuit. An RF timing system coupled to the RF generator. A system controller is coupled to the plasma chamber, the RF generator, the optical sensor, the RF timing system and the match circuit. The system controller includes a central processing unit, a memory system, a set of RF generator settings and an optical pulsed plasma analyzer coupled to the optical sensor and being capable to determine a timing of a change in state of an optical emission received in the optical sensor and/or a set of amplitude statistics corresponding to an amplitude of the optical emission received in the optical sensor. | 2016-03-03 |
20160064200 | LI-CONTAINING OXIDE TARGET ASSEMBLY - Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger. | 2016-03-03 |
20160064201 | SPUTTERING TARGET HAVING INCREASED POWER COMPATIBILITY - A plate-centering system that has a plate with a holder, in which the plate is centered in the holder both at room temperature and at higher temperatures, independently of the thermal expansion of the plate and the holder, and the plate can freely expand in the holder at higher temperatures. The invention relates in particular to a target having a frame-shaped target mount, which is very well suited for use in a coating source for high power pulsed magnetron sputtering of the target. | 2016-03-03 |
20160064202 | MALDI-TOF MASS SPECTROMETERS WITH DELAY TIME VARIATIONS AND RELATED METHODS - MALDI-TOF MS systems have solid state lasers and successive and varied delay times between ionization and acceleration (e.g. extraction) to change focus masses during a single sample signal acquisition without requiring tuning of the MS by a user. The (successive) different delay times can change by 1 ns to about 500 ns, and can be in a range that is between 1-2500 nanoseconds. | 2016-03-03 |
20160064203 | PHOSPHOR-CONTAINING COATING SYSTEMS AND FLUORESCENT LAMPS EQUIPPED THEREWITH - Coating systems suitable for use in generating fluorescent visible light, and lamps provided with such coating systems. The coating systems includes a phosphor-containing coating that contains at least a first phosphor that is predominantly excited by ultraviolet radiation of a first wavelength to emit visible light and absorbs but is less efficiently excited by ultraviolet radiation of a second wavelength. The coating system further includes a second phosphor that absorbs the ultraviolet radiation of the second wavelength and little if any of the ultraviolet radiation of the first wavelength. | 2016-03-03 |
20160064204 | Intelligent Radio-Controlled Plasma Light - The user of plasma light technology and remote lighting control techniques may enable a single master controller to control a large number of lighting fixtures. Multiple lighting fixtures may be equipped with control applications. Each control application may control the radio frequency driver of a lighting fixture that drives the plasma bulbs of the lighting fixture to produce light output for growing plants. The master controlled may execute on one or more computing devices. The master controller may send input instructions to the control applications of the lighting fixtures via a network. The instructions may be implemented by the control applications to command the radio frequency drivers to regulate a spectral distribution and/or intensity of the light output of the lighting fixtures. | 2016-03-03 |
20160064205 | LIQUID FILAMENT FOR INCANDESCENT LIGHTS - A filament for a light bulb includes a tube and a filament material within the tube, wherein the filament material is configured to be in a liquid state while the light bulb is in use. | 2016-03-03 |
20160064206 | Method for Processing an Oxygen Containing Semiconductor Body - A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment. | 2016-03-03 |
20160064207 | SEQUENTIAL ETCHING TREATMENT FOR SOLAR CELL FABRICATION - A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant. | 2016-03-03 |
20160064208 | Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation - A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF | 2016-03-03 |
20160064209 | METHODS OF DRY STRIPPING BORON-CARBON FILMS - Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF | 2016-03-03 |
20160064210 | P-FET WITH GRADED SILICON-GERMANIUM CHANNEL - A method of forming a semiconductor structure includes etching a semiconductor region of a substrate to form a thinned semiconductor region, and forming a silicon-germanium layer on the thinned semiconductor region, the silicon-germanium layer having a graded concentration profile of germanium atoms. | 2016-03-03 |
20160064211 | HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE - Methods of depositing conformal aluminum nitride films on semiconductor substrates are provided. Disclosed methods involve (a) exposing a substrate to an aluminum-containing precursor, (b) purging the aluminum-containing precursor for a duration insufficient to remove substantially all of the aluminum-containing precursor in gas phase, (c) exposing the substrate to a nitrogen-containing precursor to form aluminum nitride, (d) purging the nitrogen-containing precursor, and (e) repeating (a) through (d). Increased growth rate and 100% step coverage and conformality are attained. | 2016-03-03 |
20160064212 | CONTACT CLEAN IN HIGH-ASPECT RATIO STRUCTURES - Method and apparatus for cleaning a substrate having a plurality of high-aspect ratio openings are disclosed. A substrate can be provided in a plasma processing chamber, where the substrate includes the plurality of high-aspect ratio openings, the plurality of high-aspect ratio openings are defined by vertical structures having alternating layers of oxide and nitride or alternating layers of oxide and polysilicon. The substrate can include a silicon oxide layer over a damaged or amorphous silicon layer in the high-aspect ratio openings. To remove the silicon oxide layer, a bias power can be applied in the plasma processing chamber at a low pressure, and a fluorine-based species can be used to etch the silicon oxide layer. To remove the underlying damaged or amorphous silicon layer, a source power and a bias power can be applied in the plasma processing chamber, and a hydrogen-based species can be used to etch the damaged or amorphous silicon layer. | 2016-03-03 |
20160064213 | METHOD FOR TREATING INNER WALL SURFACE OF MICRO-VACANCY - There is provided a method for processing an inner wall surface of a micro vacancy, capable of reliably etching and cleaning even if the hole provided to the substrate to be processed is narrow and deep. The substrate has a surface on which a processing solution is to be applied and a micro vacancy with an opening on the surface. An aspect ratio (l/r) of the micro vacancy being at least 5, or the aspect ratio being less than 5 and a ratio (V/S) of a micro vacancy volume (V) to a surface area of the opening (S) being at least 3. The substrate is arranged in a processing space. Next, the processing space is depressurized, and subsequently the processing solution is introduced into the processing space so as to process the inner wall surface of the micro vacancy. | 2016-03-03 |
20160064214 | TEMPLATE MANUFACTURING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a template manufacturing method of an embodiment, a first pattern is formed on a first template. A plurality of times of imprint processing using the first template is performed. A resist pattern is formed on a plurality of areas on a second template. At this time, processing of applying resist on the second template and processing of pressing the first pattern against the resist are repeatedly performed. | 2016-03-03 |
20160064215 | Methods for Processing Bevel Edge Etching - The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate. | 2016-03-03 |
20160064216 | PATTERN FORMATION METHOD - According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns. | 2016-03-03 |
20160064217 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - This semiconductor device ( | 2016-03-03 |
20160064218 | HYDROGEN-FREE SILICON-BASED DEPOSITED DIELECTRIC FILMS FOR NANO DEVICE FABRICATION - Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films. | 2016-03-03 |
20160064219 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position. | 2016-03-03 |
20160064220 | METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS SUBSTRATE - A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid. | 2016-03-03 |
20160064221 | METHOD OF FORMING TRANSISTOR - According to another embodiment, a method of forming a transistor is provided. The method includes the following operations: providing a substrate; providing a source over the substrate; providing a channel connected to the source; providing a drain connected to the channel; providing a gate insulator adjacent to the channel; providing a gate adjacent to the gate insulator; providing a first interlayer dielectric between the source and the gate; and providing a second interlayer dielectric between the drain and the gate, wherein at least one of the formation of the source, the drain, and the channel includes about 20-95 atomic percent of Sn. | 2016-03-03 |
20160064222 | Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication - Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and methods of fabricating such a memory are described. The vertically-oriented TFT may be used as a vertical bit line selection device to couple a global bit line to a vertical bit line. A select device pillar includes a body and upper and lower source/drain regions. At least one gate is separated horizontally from the select device pillar by a gate dielectric. The gates overlie the global bit lines with one or more insulating layers therebetween to provide adequate isolation between the gates and the global bit lines. Processes for fabricating the vertical TFT select devices utilize a gate dielectric and optional dielectric bases to provide isolation between the gates and bit lines. | 2016-03-03 |
20160064223 | METHOD OF FORMING METAL GATE ELECTRODE - An aspect of this description relates to a method that includes partially filling an opening in a dielectric material with a high-dielectric-constant material. The method also includes partially filling the opening with a first metal material over the high-dielectric-constant material. The method further includes filling the opening with a capping layer over the first metal material. The method additionally includes partially removing the first metal material and the capping layer in the opening using a wet etching process in a solution including one or more of H | 2016-03-03 |
20160064224 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region defined thereon; forming a plurality of fin-shaped structures on the substrate; forming a gate layer on the fin-shaped structures; forming a material layer on the gate layer; patterning the material layer for forming sacrificial mandrels on the gate layer in the first region; forming sidewall spacers adjacent to the sacrificial mandrels; removing the sacrificial mandrels; forming a patterned mask on the second region; and utilizing the patterned mask and the sidewall spacers to remove part of the gate layer. | 2016-03-03 |
20160064225 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al). | 2016-03-03 |
20160064226 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Improvements are achieved in the properties of a semiconductor device including a MISFET and a nonvolatile memory. Over a gate electrode included in the MISFET and a control gate electrode and a memory gate electrode each included in a memory cell, a stress application film is formed of a silicon nitride film. Then, by removing the silicon nitride film from over the control gate electrode and the memory gate electrode, an opening is formed over the control gate electrode and the memory gate electrode. Then, in a state where the opening is formed in the silicon nitride film, heat treatment is performed to apply a stress to the MISFET. By thus removing the stress application film (silicon nitride film) from over the memory cell, it is possible to avoid the degradation of the properties of the memory cell due to H (hydrogen) in the silicon nitride film. | 2016-03-03 |
20160064227 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals. | 2016-03-03 |