08th week of 2011 patent applcation highlights part 15 |
Patent application number | Title | Published |
20110042628 | Negative Electrode Material for Li-Ion Batteries - The present invention relates to lithium cells, accumulators and batteries, and more particularly an active material for the negative electrode of rechargeable batteries. | 2011-02-24 |
20110042629 | PHOTOCHROMIC MATERIALS HAVING EXTENDED PI-CONJUGATED SYSTEMS AND COMPOSITIONS AND ARTICLES INCLUDING THE SAME - The present invention provides a photochromic material which is an indeno-fused naphthopyran having a pi-conjugation extending group bonded to the 11-position of the indeno-fused naphthopyran, the pi-conjugation extending group having at least one pendent halo-substituted group bonded thereto. The pi-conjugation extending group extends the pi-conjugation system of said indeno-fused naphthopyran. The 13-position of the indeno-fused naphthopyran is substantially free of spiro-substituents. The invention further provides photochromic materials of specified structure, photochromic compositions, photochromic articles and optical elements that include the photochromic material. | 2011-02-24 |
20110042630 | METHOD OF PULLING STRANDS OF A CABLE INTO A CONDUIT AND ASSOCIATED SYSTEM - The invention provides a method for pulling strands or sub-groups of strands of a multi-strand cable into a conduit ( | 2011-02-24 |
20110042631 | CABLE-INSERTING APPARATUS - The closed long bag enclosed a little air is connected to the preliminary line for inserting cable into the conduit by the small suction pump. The shape of closed long bag enclosed a little air can be changed easily. As the result, the closed long bag moves through a narrow portion and a bending portion of the conduit smoothly. Furthermore, air in a tail portion of the closed long bag moves to a head portion of the closed long bag by difference between the front portion and the end portion of the closed long bag. The head portion of the bag expands and the tail portion of the bag shrinks. As the result, the bag pulls the line very strongly. | 2011-02-24 |
20110042632 | Method and Lift Construction for Lifting and Lowering a Blade of a Windmill - A lift construction for lifting and lowering a blade of a windmill is described herein. The lift construction for lifting and lowering a blade of a windmill to and from its mounted position at a rotatable cone of the windmill comprises a first yoke mountable at the inside of the blade and a second yoke mountable in the cone of the windmill, wherein the first yoke and the second yoke are arranged to cooperate. | 2011-02-24 |
20110042633 | Unified Remote Control Operation Of Yacht Winches - A power operated winch mechanism for handling the running rigging lines of a sailing yacht. The winch includes a winding drum, which winds and stores the line during line retrieving operations and controllably releases the line when desired. A pair of the new winches can be controllably operated using a portable or fixed control device, with one winch controlled to retrieve one line while another winch controllably releases line in a coordinated procedure. Among other things, such coordinated operations can be useful in carrying out tacking and gybing maneuvers without crew involvement in line handling operations. Novel level wind features enable the lines to be appropriately tensioned during retrieval, and positively drawn from the drum when the line is not under load. Significant improvement in the safety and convenience of the crew is enabled. | 2011-02-24 |
20110042634 | TETHER HOIST SYSTEMS AND APPARATUSES - A rigging system for raising and lowering a load includes at least one tether suspended between first and second spaced apart connection points. A hoist apparatus is selectively movable along the at least one tether and is coupled to the load so that movement of the hoist apparatus causes the raising and lowering of the load. The hoist apparatus can include drive pulleys and guide pulleys. A connection apparatus for connecting a tether to a fixed surface includes a base plate, a spring mechanism, at least at least one end plate, and a bushing member coupling the second end of the spring mechanism to the end plate. Tension on the tether causes the spring mechanism to compress and reduce distance between the end and base plates. | 2011-02-24 |
20110042635 | NET FOR DELIMITING WORK-SITE AREAS OR THE LIKE AND A METHOD FOR REALISING THE NET - A net for delimiting working areas comprises a laminar structure of plastic material presenting a first prevailing dimension and a second dimension transversal to the first dimension, said laminar structure presenting at least a plurality of lightening perforations defining a plurality of substantially planar longitudinal bands that extend along the first dimension and a plurality of planar transversal bands that extend along the second dimension. The first and second bands intersect at respective nodes to form a plurality of meshes. The first dimension exhibits mechanical tensile strength properties that are similar to mechanical tensile strength properties of the second dimension and the laminar structure exhibits a weight per square metre comprised between 20 g/m | 2011-02-24 |
20110042636 | Fence to capture windblown particles - The invention provides fences for capture and control of windblown particles such as snow. In preferred embodiments the fences comprise a porous upwind panel and a porous downwind panel which are separated by a gap. The fences are adapted to deposit windblown particles in highly concentrated drifts disposed upwind and/or downwind of the fence with relatively few particles deposited in the gap. Methods for snow capture and land reclamation are also provided. | 2011-02-24 |
20110042637 | PARTIALLY PRE-ASSEMBLED FENCE ASSEMBLY AND MUTLI-ELEMENT RAIL - A fence panel, a method of erecting the same, and a corresponding fence panel kit having a plurality of pickets and a plurality of multi-element rails. The rails include anchor strips that are pivotally pre-attached to the plurality of pickets, resulting in a subassembly that can be folded to an initial compact, folded configuration of the pickets and anchor strips. The subassembly can be unfolded, allowing elongate picket positioning strips to be mounted onto the pickets and the anchor strips. Locking strips are then mounted onto the anchor strips, securing the picket positioning strips in place and completing the assembly of the multi-element rail. | 2011-02-24 |
20110042638 | Handrail for preventing stairway falls - To further prevent stairway falls, an otherwise conventional handrail, of the type that is mounted on the sidewall of a stairway and has an upper portion which is configured to be easily grasped by one utilizing, is modified by providing it with a two-part cavity in the interior of the handrail, with its first part being a slot that extends from the handrails' exterior surface and its second part being a bore that is situated in the handrail's interior and joined with the slot so as to make the bore accessible from the handrail's exterior surface. This modified handrail is also to provided with a wrist securing device that works in cooperation with the handrail's cavity for keeping the wrist of a user in close proximity to the handrail when the user is traversing the stairway. | 2011-02-24 |
20110042639 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes ( | 2011-02-24 |
20110042640 | METHOD OF FABRICATING PHASE CHANGE MEMORY CELL - A device with a memory array is disclosed. In one embodiment, the memory array includes a plurality of memory cells, each including an electrode and a phase change material. The electrode may be disposed on a substrate, the electrode having a sublithographic lateral dimension parallel to the substrate. The phase change material may be coupled to the electrode and include a lateral dimension parallel to the substrate and greater than the sublithographic lateral dimension of the electrode. | 2011-02-24 |
20110042641 | BRANCHED NANOSCALE WIRES - The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. Branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or “branches” can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H-terminated surface, then exposing the surface to a solution comprising a metal ion, which be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to the branched nanoscale wire. | 2011-02-24 |
20110042642 | METHOD FOR PRODUCING NANOSTRUCTURES ON METAL OXIDE SUBSTRATE, METHOD FOR DEPOSITING THIN FILM ON SAME, AND THIN FILM DEVICE - A method for producing nanostructures ( | 2011-02-24 |
20110042643 | Optoelectronic Semiconductor Chip Having a Multiple Quantum Well Structure - An optoelectronic semiconductor chip is specified, which has an active zone ( | 2011-02-24 |
20110042644 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 2011-02-24 |
20110042645 | NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF - A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an In | 2011-02-24 |
20110042646 | Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device - A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al. | 2011-02-24 |
20110042647 | CORRUGATED-QUANTUM WELL INFRARED PHOTODETECTOR WITH REFLECTIVE SIDEWALL AND METHOD - A quantum well infrared photodetector comprising a tunable voltage source; first and second contacts operatively connected to the tunable voltage source; a substantially-transparent substrate adapted to admit light; first and second layers operatively connected to the first and second contacts; a quantum well layer positioned between the first and second layers; light admitted through the substantially transparent substrate entering at least one of the first and second layers and passing through the quantum well layer; at least one side wall adjacent to at least one of the first and second layers and the quantum well layer; the at least one side wall being substantially non-parallel to the incident light; the at least one sidewall comprising reflective layer which reflects light into the quantum well layer for absorption. A preferred method for improving the reflectivity of a quantum well infrared photodetector comprises forming a first sidewall layer on the sidewalls of the corrugated quantum well infrared photodetector; forming a second sidewall layer on the sidewalls of the corrugated quantum well infrared photodetector; the second sidewall layer being formed of a reflective material and the first sidewall layer operating to electrically isolate the reflective material from at least one of the first and second contact layers; whereby the reflective metal operates to reflect light rays into corrugated quantum well infrared photodetector device and to substantially prevent infrared rays in environment from entering through the sidewalls. | 2011-02-24 |
20110042648 | RECONFIGURABLE LOGIC DEVICE USING SPIN ACCUMULATION AND DIFFUSION - A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns. | 2011-02-24 |
20110042649 | Thin-Film Transistor, Carbon-Based Layer and Method of Producing Thereof - The present invention relates to a thin-film transistor which comprises a conductive and predominantly continuous carbon-based layer ( | 2011-02-24 |
20110042650 | SINGLE AND FEW-LAYER GRAPHENE BASED PHOTODETECTING DEVICES - A photodetector which uses single or multi-layer graphene as the photon detecting layer is disclosed. Multiple embodiments are disclosed with different configurations of electrodes. In addition, a photodetector array comprising multiple photodetecting elements is disclosed for applications such as imaging and monitoring. | 2011-02-24 |
20110042651 | LIQUID CRYSTALLINE RYLENE TETRACARBOXYLIC ACID DERIVATIVES AND USE THEREOF - The present invention relates to liquid-crystalline rylenetetracarboxylic acid derivatives, to processes for their preparation and to their use as n-type organic semiconductors for producing organic field-effect transistors and solar cells. | 2011-02-24 |
20110042652 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2011-02-24 |
20110042653 | Near-Infrared Absorbing Film Compositions - A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film. | 2011-02-24 |
20110042654 | Organic compound, and organic photoelectric device comprising the same - Disclosed is an organic compound represented by the following Chemical Formula 1 that easily dissolves in an organic solvent, and that is applicable as a host material of an emission layer of an organic photoelectric device since it emits fluorescence and phosphorescence at a red wavelength through a blue wavelength. | 2011-02-24 |
20110042655 | AROMATIC ELECTROLUMINESCENT COMPOUNDS WITH HIGH EFFICIENCY AND ELECTROLUMINESCENT DEVICE USING THE SAME - The present invention relates to an organic electroluminescent compound including a fusion ring and an organic elecotroluminescent including the same. The organic electroluminescent according to the present invention has an advantage of exhibiting an EL properties superior to existing electroluminescent materials as it has a good thin film stability due to a low crystallization and a satisfactory color purity. | 2011-02-24 |
20110042656 | Electronic Devices and Methods of Making the Same Using Solution Processing Techniques - An electronic device comprising: an electronic substrate comprising circuit elements; a double bank well-defining structure disposed over the electronic substrate, the double bank well-defining structure comprising a first layer of insulating material and a second layer of insulating material thereover, the second layer of insulating material having a lower wettability than the first layer of insulating material; and organic semiconductive material disposed in wells defined by the double bank well-defining structure. | 2011-02-24 |
20110042657 | High Efficiency Electroluminescent Devices and Methods for Producing the Same - Aspects of the disclosure include electroluminescent devices and methods for making the same. The devices include a substrate, a hole-injection electrode layer, an electroluminescent layer, and an electron-injection electrode layer, such as a layer that includes an air-stable, low work function material, which layer is capable of achieving efficient electron injection with reduced current leakage. In certain embodiments, the devices may contain an efficient electron injection layer that includes a composition comprising a polymer, e.g., a polymer that contains polar components (such as a polar functional group), and a metal diketonate. In certain embodiments, the devices may contain an electron injection layer that includes polyethylene glycol dimethyl ether and barium or calcium acetylacetonate. Methods of manufacturing such devices, for instance, employing a solution processing step for the deposition of an electron injection layer, as well as the use of the produced device(s) in electroluminescent displays is also provided herein. | 2011-02-24 |
20110042658 | ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE - An anthanthrene based compound of the structural formula (1) is disclosed: | 2011-02-24 |
20110042659 | THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD - A thin film deposition apparatus that includes a thin film deposition assembly incorporating: a deposition source that discharges a deposition material; a deposition source nozzle unit that is disposed at a side of the deposition source and includes a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet that is disposed opposite to the deposition source nozzle unit and includes a plurality of patterning slits arranged in the first direction; and a barrier plate assembly including a plurality of barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, and partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces, wherein each of the barrier plates is separate from the patterning slit sheet. | 2011-02-24 |
20110042660 | ORGANIC LUMINESCENT MEDIUM AND ORGANIC EL DEVICE - Provided is an organic luminescent medium containing a specific diaminopyrene derivative and a specific anthracene derivative. Also provided are an organic electroluminescence device capable of emitting light having a short wavelength (such as blue light) with high luminous efficiency and having a long lifetime by having such constitution that the organic EL device contains one or more organic thin film layers including a light emitting layer between a cathode and an anode, and at least one layer of the organic thin film layers contains the organic luminescent medium, and an organic luminescent medium that can be used in an organic thin film layer of the organic EL device. | 2011-02-24 |
20110042661 | CONJUGATED POLYMER, INSOLUBILIZED POLYMER, ORGANIC ELECTROLUMINESCENCE ELEMENT MATERIAL, COMPOSITION FOR ORGANIC ELECTROLUMINESCENCE ELEMENT, POLYMER PRODUCTION PROCESS, ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC EL DISPLAY AND ORGANIC EL LIGHTING - An object of the present invention is to provide a conjugated polymer which has a high hole transportability and is excellent in solubility and depositability. Another object of the present invention is to provide an organic electroluminescence element which is capable of low voltage driving and has a high luminous efficiency and drive stability. The conjugated polymer of the present invention is a conjugated polymer containing a specific structure as the repeating unit, where the conjugated polymer contains an insolubilizing group as a substituent, the weight average molecular weight (Mw) is 20,000 or more and the dispersity (Mw/Mn) is 2.40 or less. | 2011-02-24 |
20110042662 | ORGANIC ELECTROLUMINESCENCE ELEMENT, AND METHOD FOR PRODUCTION THEREOF - Disclosed is an organic electroluminescence element comprising at least an anode, a light-emitting layer, an intermediate layer and a cathode laminated sequentially in this order, wherein the intermediate layer comprises a salt of an acid of at least one metal selected from the group consisting of molybdenum, tungsten, vanadium, tantalum, titanium and metals belonging to Group IIb and at least one alkali metal selected from the group consisting of potassium, rubidium and cesium. | 2011-02-24 |
20110042663 | DIBENZO[c,g]FLUORENE COMPOUND AND AN ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device which has high emission efficiency and high durability even at low drive voltage is provided. An organic light-emitting device including an anode, a cathode, and an organic compound layer which is interposed between the anode and the cathode, wherein the organic compound layer include at least one dibenzo[c,g]fluorene compound represented by the following General Formula (1). | 2011-02-24 |
20110042664 | CHARGE-TRANSPORTING POLYMER COMPOUND AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING THE SAME - A charge-transporting polymer including a unit derived from at least one polymerizable compound represented by formula (1), formula (2) and formula (3): | 2011-02-24 |
20110042665 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREFOR - An organic photoelectric conversion element including and anode, a cathode, an active layer disposed between the anode and the cathode, and a functional layer disposed between the active layer and the anode so as to contact the anode, wherein the functional layer is formed by a coating method using a solution having a pH of 5 to 9, and the anode is formed by a coating method. | 2011-02-24 |
20110042666 | Organic light emitting display device - An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines. | 2011-02-24 |
20110042667 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask. | 2011-02-24 |
20110042668 | AMORPHOUS OXIDE SEMICONDUCTOR MATERIAL, FIELD-EFFECT TRANSISTOR, AND DISPLAY DEVICE - There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b−3.2 and c>−5b+8 and 1≦c≦2. | 2011-02-24 |
20110042669 | Thin film transistors and methods of manufacturing the same - A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer. | 2011-02-24 |
20110042670 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode. | 2011-02-24 |
20110042671 | Semiconductor Device Test Structures and Methods - Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line, a stress line disposed proximate the feed line, and a conductive feature disposed between the stress line and the feed line. The test structure includes a temperature adjuster proximate at least the conductive feature, and at least one feedback device coupled to the temperature adjuster and at least the conductive feature. | 2011-02-24 |
20110042672 | Coplanar waveguide having amorphous silicon layer between substrate and insulated layer and a manufacturing method thereof - A coplanar waveguide includes a high resistance silicon substrate having one primary surface on which an amorphous silicon layer is formed, an insulated layer formed on the amorphous silicon layer, a signal line arranged on the insulated layer and a pair of ground planes arranged on the insulated layer so as to put the signal line between the planes. The coplanar waveguide is not structured as conventionally having a thick insulated layer formed on a single-crystalline silicon substrate, thereby reducing attenuation otherwise caused by leakage of electromagnetic wave in a frequency bandwidth of millimeter wave. | 2011-02-24 |
20110042673 | SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a sensor having a high sensitivity and a high degree of freedom of layout by reducing constrictions of the channel shape, the reaction field area, and the position. Provided is also a method for manufacturing the sensor. The sensor ( | 2011-02-24 |
20110042674 | PRODUCTION METHODS OF PATTERN THIN FILM, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE, AND RESIST MATERIAL, SEMICONDUCTOR ELEMENT, AND CIRCUIT SUBSTRATE - A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film. | 2011-02-24 |
20110042675 | Display device and manufacturing method thereof - An etching resist including first and second portions, the first portion being thicker than the second portion, is formed on a metallic layer. Through the etching resist, a semiconductor layer and the metallic layer are patterned by etching so as to form a wiring from the metallic layer and leave the semiconductor layer under the wiring. An electrical test is conducted on the wiring. The second portion is removed while the first portion is left unremoved. Selective etching is performed through the first portion so as to leave the semiconductor layer unetched to pattern the wiring to be divided into drain and source electrodes. A substrate is cut. In patterning the wiring, the wiring is etched to be cut at a position closer to a cutting line of the substrate with respect to the drain and source electrodes, while leaving the semiconductor layer unetched. | 2011-02-24 |
20110042676 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor liquid crystal display (TFT-LCD) array substrate and a method of manufacturing a TFT-LCD array substrate are provided in the invention. The TFT-LCD array substrate comprises a plurality of gate lines and a plurality of data lines formed on a substrate. A plurality of pixel regions are defined by the gate lines and the data lines. A pixel electrode, a first thin film transistor for controlling the charge of the pixel electrode and a second thin film transistor for controlling the pre-charge of the pixel electrode are formed in each pixel region. | 2011-02-24 |
20110042677 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions. | 2011-02-24 |
20110042678 | Pad area, organic light emitting diode display device having the same, and method of fabricating the same - An organic light emitting diode (OLED) display device having a pixel area and a pad area. The pad area includes a silicon layer pattern arranged on the substrate, an insulating layer arranged on the silicon layer pattern, an interconnection layer arranged on the insulating layer, and a protective layer surrounding an edge of the interconnection layer and having an opening exposing the interconnection layer. Since a surface area of the interconnection layer is increased due to a roughness of the underlying polycrystalline silicon layer pattern in the pad area, resulting in increased contact area and reduced contact resistance between parts configured to operate a flat panel display device and the interconnection layer is increased. | 2011-02-24 |
20110042679 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 2011-02-24 |
20110042680 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion. | 2011-02-24 |
20110042681 | N-SIDE ELECTRODE, NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - An n-side electrode that can inhibit the reduction in ohmic properties is provided. The n-side electrode is an n-side electrode for a nitride semiconductor light-emitting element, and includes an Al layer forming an ohmic contact to an n-type nitride semiconductor layer and having a thickness of 30 nm or greater. | 2011-02-24 |
20110042682 | INCLUSION-FREE UNIFORM SEMI-INSULATING GROUP III NITRIDE SUBSTRATES AND METHODS FOR MAKING SAME - In a method for making an inclusion-free uniformly semi-insulating GaN crystal, an epitaxial nitride layer is deposited on a substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode, wherein a surface of the nucleation layer is substantially covered with pits and the aspect ratio of the pits is essentially the same. A GaN transitional layer is grown on the nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. After growing the transitional layer, a surface of the transitional layer is substantially pit-free. A bulk GaN layer is grown on the transitional layer by HVPE. After growing the bulk layer, a surface of the bulk layer is smooth and substantially pit-free. The GaN is doped with a transition metal during at least one of the foregoing GaN growth steps. | 2011-02-24 |
20110042683 | CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks. | 2011-02-24 |
20110042684 | Method of Growing AlN Crystals, and AlN Laminate - Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material ( | 2011-02-24 |
20110042685 | SUBSTRATES AND METHODS OF FABRICATING EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including epitaxial layers, by supplying sources of silicon and carbon with sequential emphasis. In at least some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer on a substrate in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source, and purging other gaseous materials subsequent to converting the layer. The presence of the silicon source can be independent of the presence of the carbon source. In some embodiments, dopants, such as n-type dopants, can be introduced during the formation of the epitaxial layer of silicon carbide. | 2011-02-24 |
20110042686 | SUBSTRATES AND METHODS OF FABRICATING DOPED EPITAXIAL SILICON CARBIDE STRUCTURES WITH SEQUENTIAL EMPHASIS - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, and methods to form silicon carbide structures, including doped epitaxial layers (e.g., P-doped silicon carbide epitaxial layers), by supplying sources of silicon and carbon with sequential emphasis. In some embodiments, a method of forming an epitaxial layer of silicon carbide can include depositing a layer in the presence of a silicon source, and purging gaseous materials subsequent to depositing the layer. Further, the method can include converting the layer into a sub-layer of silicon carbide in the presence of a carbon source and a dopant, and purging other gaseous materials. In some embodiments, the presence of the silicon source can be independent of the presence of the carbon source and/or the dopant. | 2011-02-24 |
20110042687 | GRAPHENE GROWTH ON A CARBON-CONTAINING SEMICONDUCTOR LAYER - A semiconductor-carbon alloy layer is formed on the surface of a semiconductor substrate, which may be a commercially available semiconductor substrate such as a silicon substrate. The semiconductor-carbon alloy layer is converted into at least one graphene layer during a high temperature anneal, during which the semiconductor material on the surface of the semiconductor-carbon alloy layer is evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed and the carbon concentration on the surface of the semiconductor-carbon alloy layer increases, the remaining carbon atoms in the top layers of the semiconductor-carbon alloy layer coalesce to form a graphene layer having at least one graphene monolayer. Thus, a graphene layer may be provided on a commercially available semiconductor substrate having a diameter of 200 mm or 300 mm. | 2011-02-24 |
20110042688 | BUFFER BILAYERS FOR ELECTRONIC DEVICES - The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer including a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals. | 2011-02-24 |
20110042689 | Semiconductor light-emitting element array device, image exposing device, image forming apparatus, and image display apparatus - A semiconductor light-emitting element array device includes a substrate; a plurality of removable layers being disposed on the substrate; and a thin-film semiconductor light-emitting device being disposed on each of the plurality of removable layers, being made of a different material from a surface material of the substrate, and having a semiconductor light-emitting element; wherein the plurality of removable layers are made of a material which is capable of being etched by a selective chemical etching process. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image exposing device includes an image exposing unit including the semiconductor light-emitting element array device. An image display apparatus includes an image display unit including the semiconductor light-emitting element array device. | 2011-02-24 |
20110042690 | LIGHT EMITTING DIODE PACKAGE - The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity. | 2011-02-24 |
20110042691 | ORGANIC ELECTROLUMINESCENT DISPLAY AND MANUFACTURING METHOD THEREFOR - This invention provides a means for suppressing streaks of light emission in an organic EL display having an organic light-emitting layer formed by coating by an ink jet method. A manufacturing process of the organic EL display of this invention includes: preparing a display substrate having two or more linear banks in parallel to each other, and two or more pixel regions arranged in a region between the linear banks; arranging an ink jet head such that the alignment direction of nozzles and the line direction of the linear banks are in parallel; and relatively moving the ink jet head in a direction perpendicular to the line direction of the linear banks and discharging the ink from the nozzles to apply the ink to every region defined by the linear banks. | 2011-02-24 |
20110042692 | ACTIVE MATRIX SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - An active matrix substrate is provided which does not cause reductions in the brightness of electroluminescence elements, and which comprises appropriate peripheral circuitry occupying a small area. The active matrix substrate comprises peripheral circuits to supply current to EL elements provided for each pixel, and corresponding to EL elements, and further comprises a holding element (C) which holds a control voltage, a first active element (T | 2011-02-24 |
20110042693 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device ( | 2011-02-24 |
20110042694 | LIGHT-EMITTING ELEMENT AND DISPLAY PANEL - Light extraction efficiency is improved as a whole light emitting element. A light emitting element ( | 2011-02-24 |
20110042695 | LIGHT EMITTING DEVICE AND DISPLAY PANEL - Organic semiconductor layers include between a first electrode and a photoelectric converting layer a light extraction improving layer that contains at least silver or gold in part as a component, partially reflects light, and has transparency. The light extraction improving layer is in contact with or is inserted into a functional layer containing, for example, an organic semiconductor material, an oxide, a fluoride, or an inorganic compound having strong acceptor properties or strong donor properties with an ionization potential of 5.5 eV or higher, within the organic semiconductor layers. | 2011-02-24 |
20110042696 | Organic Electroluminescent Device - An organic electroluminescent device cfomprising: a transparent substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light-emitting layer disposed between the first and the second electrode, wherein the second electrode is reflective, the first electrode is transparent or semi-transparent, and one or more intermediate layers of dielectric material with a refractive index greater than 1.8 or a metal material is disposed between the substrate and the first electrode forming a semi-transparent mirror whereby a microcavity is provided between the reflective second electrode and the semi-transparent mirror, all the intermediate layers disposed between the substrate and the first electrode having a surface nearest the organic light-emitting layer not more than 150 nm from a surface of the first electrode nearest the organic light-emitting layer. | 2011-02-24 |
20110042697 | Organic Light Emitting Diode Display - An organic light emitting diode display includes a display substrate including a plurality of organic light emitting diodes, a plurality of color filters on the plurality of organic light emitting diodes respectively corresponding thereto, and a plurality of light scattering particles dispersed in the plurality of color filters. | 2011-02-24 |
20110042698 | EMITTER PACKAGE WITH ANGLED OR VERTICAL LED - The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis. LED displays according to the present invention comprise a plurality of LED packages, at least some of which have an LED chip mounted in a reflective cup at different angles to achieve the desired display FFP. | 2011-02-24 |
20110042699 | Substrate for light emitting diode package and light emitting diode package having the same - A substrate for a light emitting diode (LED) package, and an LED package having the same are disclosed. The substrate for an LED package includes: a metal plate; an insulation oxide layer formed on a portion of the surface of the metal plate; a first conductive pattern formed at one region of the insulation oxide layer and providing a light emitting diode mounting area; and a second conductive pattern formed at another region of the insulation oxide layer such that it is separated from the first conductive pattern. In the substrate for an LED package, because regions of the insulation oxide layer other than regions for insulating conductive patterns are removed, heat generated from the light emitting diode can be effectively released. In addition, degradation of reflexibility and luminance of the LED due to the insulation oxide layer can be prevented. | 2011-02-24 |
20110042700 | DIFFUSER FOR LED LIGHT SOURCES - An LED light source, which includes at least one LED, a panel between the LED and the light emission surface of the light source, and a filler material inside the panel containing a material to diffuse the light from the at least one LED by Mie scattering. | 2011-02-24 |
20110042701 | OPTOELECTRONIC DEVICE WITH LIGHT DIRECTING ARRANGEMENT AND METHOD OF FORMING THE ARRANGEMENT - An optoelectronic device ( | 2011-02-24 |
20110042702 | Organic Light Emitting Device and Method for Manufacturing the Same - Provided are an organic light emitting device and a method for manufacturing the same. The organic light emitting device includes: a substrate; an organic light emitting device layer on the substrate; an encapsulation layer on the organic light emitting device, the encapsulation layer comprising at least one first layer and at least one second layer on the first layer, the first layer having a different refractive index from the second layer; and a moisture transmission layer on the encapsulation layer, the moisture transmission layer being configured to prevent moisture from permeating the encapsulation layer. The encapsulation layer is formed by stacking material layers having different refractive indexes to protect the organic light emitting device layer. Thus, light emitted to lateral surfaces of the organic light emitting device which is a surface emitting device can be directed toward a front surface to improve optical radiation efficiency. | 2011-02-24 |
20110042703 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND MANUFACTURING METHOD THEREOF - The organic electroluminescence element includes a substrate and an anode metal layer above the substrate. The anode metal layer includes an inner region between a pair of outer regions. A metal oxide layer is above the inner region and the outer regions of the anode metal layer. An insulating layer is above the metal oxide layer and the outer regions of the anode metal layer. A hole transport layer is above the metal oxide layer and the inner region of the anode metal layer. An organic luminescent layer is above the hole transport layer. A cathode layer is above the organic luminescent layer for injecting electrons into the organic luminescent layer. A thickness of the metal oxide layer on the inner region of the anode metal layer is greater than a thickness of the metal oxide layer on the outer regions of the anode metal layer. | 2011-02-24 |
20110042704 | METHOD OF COATING SULFIDE PHOSPHOR AND LIGHT EMITTING DEVICE EMPLOYING COATED SULFIDE PHOSPHOR - A method of coating phosphor powder with a composite oxide, and a light emitting device that employs the phosphor powder coated with the composite oxide are disclosed. The method includes mixing a silicon oxide precursor and a precursor of another oxide in water and alcohol to form a primary coating layer on a sulfide phosphor through a sol-gel reaction, heat treating the primary coating layer to form a composite oxide layer of the silicon oxide and the other oxide from the primary coating layer. The method improves moisture stability of the sulfide phosphor compared to a sulfide phosphor coated with a single silicon oxide film. | 2011-02-24 |
20110042705 | SEMICONDUCTOR LIGHT EMITTING DIODES INCLUDING MULTIPLE BOND PADS ON A SINGLE SEMICONDUCTOR DIE - A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided. | 2011-02-24 |
20110042706 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 2011-02-24 |
20110042707 | Substrate for flexible display device, OLED display device including the same, and associated methods - A substrate for a flexible display device, an OLED display device including the same, and associated methods, the substrate including a composite of an inorganic layered compound and a moisture-absorption material, and a polymer resin. | 2011-02-24 |
20110042708 | OPTICAL SEMICONDUCTOR DEVICE HAVING METAL LAYER WITH COARSE PORTION SANDWICHED BY TIGHT PORTIONS AND ITS MANUFACTURING METHOD - In an optical semiconductor device including a semiconductor laminated body including at least a light emitting layer, a first metal body including at least one first metal layer formed on the semiconductor laminated body, a support substrate, a second metal body including at least one second metal layer formed on the support substrate, and at least one adhesive layer formed in a surface side of at least one of the first and second metal bodies, the semiconductor laminated body is coupled to the support substrate by applying a pressure-welding bonding process upon the adhesive layer to form a eutectic alloy layer between the first and second metal bodies. At least one of the first and second metal layers has a triple structure formed by two tight portions and a coarse portion sandwiched by the tight portions. | 2011-02-24 |
20110042709 | Free-standing mounted light emitting diodes for general lighting - The current invention introduces a semiconductor light emitting device mounted in a free-standing way for enhanced light extraction and handling simplicity. The free-standing mount is based on the mechanical strength of the current carrying connectors, such as wires or bonds. Such mounted LED die can be placed into standard light bulb body for compatibility with existing household, car, consumer electronics or industrial light sources. The current invention provides increased light extraction efficiency which makes general LED lighting simpler and cheaper. The mounting into a conventional light bulb provides the consumer with the ease of handling and mounting. | 2011-02-24 |
20110042710 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region. | 2011-02-24 |
20110042711 | III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention relates to III-nitride semiconductor light emitting device and a method for fabricating the same. The III-nitride semiconductor light emitting device includes: a substrate; a plurality of III-nitride semiconductor layers grown over the substrate and including an active layer for generating light by recombination of electrons and holes; and a protrusion formed on a surface of the substrate over which the semiconductor layers are to be grown, a section of the protrusion which is in parallel to the growth direction of the semiconductor layers being formed in a triangular shape. | 2011-02-24 |
20110042712 | TYPE OF GAPLESS SEMICONDUCTOR MATERIAL - The present disclosure provides a new type of gapless semiconductor material having electronic properties that can be characterized by an electronic band structure which comprises valence and conduction band portions VB | 2011-02-24 |
20110042713 | NITRIDE SEMI-CONDUCTIVE LIGHT EMITTING DEVICE - The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate | 2011-02-24 |
20110042714 | POWER SEMICONDUCTOR DEVICE - According to one embodiment, a power semiconductor device includes an IGBT region, first and second electrodes, and a first-conductivity-type second semiconductor layer. The region functions as an IGBT element. The first electrode is formed in a surface of a second-conductivity-type collector layer opposite to a first-conductivity-type first semiconductor layer in the region. The second electrode is connected onto a first-conductivity-type emitter layer and a second-conductivity-type base layer in a surface of the first-conductivity-type base layer and insulated from a gate electrode in the region. The first-conductivity-type second semiconductor layer extends from the surface of the first-conductivity-type base layer to the first-conductivity-type first semiconductor layer around the IGBT region, and connected to the first electrode. | 2011-02-24 |
20110042715 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate; a first base region of a first conductivity type provided in the semiconductor substrate; a buffer region of the first conductivity type provided on a lower surface of the first base region and having an impurity concentration higher than an impurity concentration of the first base region; an emitter region of a second conductivity type provided on a lower surface of the buffer region; a second base region of the second conductivity type selectively provided on an upper surface of the first base region; a diffusion region of the first conductivity type selectively provided on an upper surface of the second base region; a control electrode; a first main electrode; and a second main electrode. A junction interface between the buffer region and the first base region has a concave portion and a convex portion. | 2011-02-24 |
20110042716 | ESD protection device structure - An ESD protection device structure includes a well having a first conductive type, a first doped region having a second conductive type disposed in the well, a second doped region having the first conductive type, and a third doped region having the second conductive type disposed in the well. The second doped region is disposed within the first doped region so as to form a vertical BJT, and the first doped region, the well and the third doped region forms a lateral BJT, so that pulse voltage that the ESD protection structure can tolerate can be raised. | 2011-02-24 |
20110042717 | INTEGRATED LOW LEAKAGE DIODE - An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on. | 2011-02-24 |
20110042718 | NITRIDE SEMICONDUCTOR LAYER-CONTAINING STRUCTURE, NITRIDE SEMICONDUCTOR LAYER-CONTAINING COMPOSITE SUBSTRATE AND PRODUCTION METHODS OF THESE - A nitride semiconductor layer-containing structure having a configuration in which: the structure includes a laminated structure based on at least two nitride semiconductor layers; the structure includes between the two nitride semiconductor layers in the laminated structure a plurality of voids surrounded by the faces of the walls inclusive of the inner walls of the recessed portions of the asperity pattern formed on the nitride semiconductor layer that is the lower layer of the two nitride semiconductor layers; and crystallinity defect-containing portions to suppress the lateral growth of the nitride semiconductor layer are formed on at least part of the inner walls of the recessed portions to form the voids. | 2011-02-24 |
20110042719 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - It is an objective of the present invention to increase channel current density while allowing a GaN field effect transistor to perform normally-off operation. | 2011-02-24 |
20110042720 | Magneto-Electric Field Effect Transistor for Spintronic Applications - The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region. | 2011-02-24 |
20110042721 | PHOTOVOLTAIC DEVICES - Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a second barrier layer located on the well layer. A metal layer is located adjacent to the active layer. | 2011-02-24 |
20110042722 | INTEGRATED CIRCUIT STRUCTURE AND MEMORY ARRAY - An integrated circuit structure includes a plurality of first doped regions disposed in a substrate in a matrix having odd columns and even columns each immediately adjacent to a corresponding one of the odd columns, a plurality of buried bit lines disposed in the substrate to electrically connect to the plurality of first doped regions of the same odd column in the matrix, and a plurality of surface bit lines disposed above an uppermost surface of the substrate, wherein each of the surface bit lines electrically connects to the first doped regions of the same even column in the matrix. | 2011-02-24 |
20110042723 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MAKING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a photoelectric conversion unit that includes a first region of a first conductivity type and a second region of a second conductivity type between which a pn junction is formed, the first region and the second region being formed in a signal-readout surface of a semiconductor substrate, the second region being located at a position deeper than the first region; and a transfer transistor configured to transfer signal charges accumulated in the photoelectric conversion unit to a readout drain through a channel region that lies under a surface of the first region and horizontally adjacent to the photoelectric conversion unit, the transfer transistor being formed in the signal-readout surface. The transfer transistor includes a transfer gate electrode that extends from above the channel region with a gate insulating film therebetween to above the first region so as to extend across a step. | 2011-02-24 |
20110042724 | Trenched mosfets with part of the device formed on a (110) crystal plane - This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming the sidewalls of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed along different crystal orientations of the semiconductor substrate. Special manufacturing processes such as oxide annealing process, special mask or SOG processes are implemented to overcome the limitations of the non-uniform dielectric layer growth. | 2011-02-24 |
20110042725 | SEMICONDUCTOR DEVICE - With inversion-mode transistors, intrinsic-mode transistors, or semiconductor-layer accumulation-layer current controlled accumulation-mode transistors, variation in threshold voltages becomes large in miniaturized generations due to statistical variation in impurity atom concentrations and thus it is difficult to maintain the reliability of an LSI. Provided is a bulk current controlled accumulation-mode transistor which is formed by controlling the thickness and the impurity atom concentration of a semiconductor layer so that the thickness of a depletion layer becomes greater than that of the semiconductor layer. For example, by setting the thickness of the semiconductor layer to 100 nm and setting the impurity concentration thereof to be higher than 2×10 | 2011-02-24 |
20110042726 | High-voltage transistor device with integrated resistor - A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially proportional to an external voltage when the external voltage is less than a pinch-off voltage of the JFET. The voltage provided at the terminal being substantially constant when the external voltage is greater than the pinch-off voltage. One end of the resistor is substantially at the external voltage when the external voltage is greater than the pinch-off voltage. When the external voltage is negative, the resistor limits current injected into the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. | 2011-02-24 |
20110042727 | MOSFET device with reduced breakdown voltage - A semiconductor device includes a drain, an epitaxial layer overlaying the drain, and an active region. The active region includes a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, a contact trench extending through the source and at least part of the body, a contact electrode disposed in the contact trench, and an epitaxial enhancement portion disposed below the contact trench, wherein the epitaxial enhancement portion has the same carrier type as the epitaxial layer. | 2011-02-24 |