02nd week of 2011 patent applcation highlights part 40 |
Patent application number | Title | Published |
20110008870 | Fungal protease and use thereof - The present invention is related to a fungal serine protease enzyme useful in modification, degradation or removal of proteinaceous material, which enzyme comprises an amino acid sequence of the mature Tr Prb1 enzyme having an amino acid sequence of SEQ ID NO: 10 or a variant thereof having similar activity. The serine protease is obtainable from | 2011-01-13 |
20110008871 | Production of Homogeneous Cell Line Highly Permissive To Porcine Circovirus Type 2 (PCV2) Infection - Continuous cell lines that are highly permissive to infection by porcine circovirus type 2 (“PCV2”) are described. PCV2 is the causal agent of post-weaning multi-systemic wasting syndrome (“PMWS”) in pigs. PMWS has emerged as a major disease that poses a significant threat to the economics of global swine industry. The highly permissive cell lines of this invention provide efficient and reliable sources of PCV2 for use in development of vaccines, therapies and diagnostic agents for PMWS. | 2011-01-13 |
20110008872 | Immortalized Avian Cell Lines - This invention relates to immortalized avian cells, including those deposited under accession numbers 09070701, 09070702, and 09070703 at the ECACC, and to the use of these cells for the production of viruses. The cells according to the invention are particularly useful for the production of recombinant viral vectors which can be used for the preparation of therapeutic and/or prophylactic compositions for the treatment of animals and more particularly humans. | 2011-01-13 |
20110008873 | PURIFIED BACTERIOPHAGE, ITS PREPARATION AND APPLICATION - A method of preparation of purified bacteriophage with increased antibacterial activity, in which from bacterial lysate of phages is obtained, advantageously in the presence of lysozyme, chelating factor and detergent, in a continuous manner with ultrafiltration on membranes, the phage containing high molecular mass preparation, devoid of bacterial cell wall and other contaminants, free of toxins and endotoxins, active in tests of bacterial lysis, which is characterized by chromatography HPLC, In SDS-PAGE electrophoresis, immunoblotting, biological tests of bacterial lysis, and is dedicated for phage therapy of bacterial infections and tumors and for production of phage deriving pharmaceutical preparations. | 2011-01-13 |
20110008874 | FROZEN LACTIC ACID BACTERIAL CULTURE OF INDIVIDUAL PELLET - A stable, pellet-frozen lactic acid bacteria (LAB) culture comprises at least one additive compound in a commercial relevant package. The pellet-frozen culture has at least 50 g frozen material and a content of viable bacteria of at least 10 | 2011-01-13 |
20110008875 | MICROORGANISM-PROTECTING AGENT, AND METHOD FOR PRODUCTION OF FROZEN OR LYOPHILIZED MICROBIAL CELL - The present invention provides a method of preparing frozen or lyophilized microbial cells which can inhibit damages or death of microbial cells and have high viabilities in freezing or lyophilizing process. | 2011-01-13 |
20110008876 | METHOD FOR THE TREATMENT OF GROUND WATER AND SOILS USING MIXTURES OF SEAWEED AND KELP - The induction of reducing conditions and stimulating anaerobic process through the addition of species of seaweed (Dulse, Nori, | 2011-01-13 |
20110008877 | CORNEA STORAGE CONTAINER TO OPTIMIZE CORNEA HEALTH - An apparatus for shipping, storing, and viewing a cornea. The device offers an improvement to cornea health relative to conventional cornea containers. | 2011-01-13 |
20110008878 | TARGET NUCLEIC ACID MEASURING APPARATUS - The present invention relates to calculation of an initial template amount in a test sample by fitting a theoretical expression to detection intensity of target nucleic acid corresponding to thermal cycle number, wherein the theoretical expression includes an environmental coefficient as an exponent parameter, a parameter of the initial template amount in the test sample, and terms for internal standard correction and baseline correction of the detection intensity of the amplification amount of the target nucleic acid, and includes at least one parameter among a saturation amount upon the target nucleic acid amplification, a reaction acceleration coefficient, and a reaction inhibition coefficient. | 2011-01-13 |
20110008879 | BIO-ASSAY SUBSTRATE, BIO-ASSAY APPARATUS, AND READING APPARATUS - A bioassay substrate high in integration amount, free in grouping of substances, low in cost, and the like are provided. Specifically, a bioassay substrate includes detection surfaces S on which detection substances can be solidified, the detection surfaces S is provided on a surface of a disk form substrate capable of reading out record information optically, and the detection surfaces S is provided in groove structures (pits) provided in the surface of the substrate radially as viewed on the upper side at predetermined intervals. A bioassay system using the bioassay substrate and a readout system are also provided. | 2011-01-13 |
20110008880 | Portable Analyzer - A portable analyzer A | 2011-01-13 |
20110008881 | THERMAL CYCLING DEVICE WITH SELECTIVELY OPENABLE SAMPLE PORT - A device for thermal cycling a plurality of samples, the device including a chamber for housing a plurality of sample containers, the chamber having a selectively openable port, wherein one or more selected sample containers can be introduced to or withdrawn from the chamber through the port during thermal cycling. | 2011-01-13 |
20110008882 | SPECIFIC GRP78 EXPRESSION-INHIBITION RNAi SEQUENCE, MEDICINE THEREOF AND METHOD THEREOF - The present invention discloses a specific GRP78 expression-inhibition RNAi sequence, a medicine thereof and a method thereof, wherein an RNAi sequence 5′-AAGGATGGTTAATGATGCTGAGAA-3′ [SEQ. ID NO: 1] complementary to GRP78 forms a special hair-pin structure inside cancer cells to specifically and effectively inhibit GRP78 expression and then inhibit the canceration process, including the growth, migration, invasion, and metastasis of cancer. | 2011-01-13 |
20110008883 | MAMMALIAN CELL-BASED IMMUNOGLOBULIN DISPLAY LIBRARIES - Disclosed are mammalian cell surface display vectors for isolating and/or characterizing immunoglobulins and various uses thereof. | 2011-01-13 |
20110008884 | PATHOLOGY GROSSING TOOL, CASSETTE, AND BOARD - A pathology grossing tool and board are provided for the preparation from a gross tissue of a uniformly thin tissue specimen, which is suitable for processing for histology, histochemistry, antibody binding, genetic analysis, or the like. A tissue cassette for receiving the tissue sample, providing a flat-cutting surface along its upper edge, and holding the thin tissue specimen is also provided. Methods for their use are provided. | 2011-01-13 |
20110008885 | LINEAR DOUBLE-STRANDED RNA MOLECULE INTERFERING WITH DIFFERENT TARGET GENES - A linear double-stranded RNA molecule, which comprises two or more consecutively or convergently linked short interfering RNAs (siRNAs) each reducing the expression of one of different target genes, and a recombinant expression vector comprising double-stranded DNA sequence expressing the linear double-stranded RNA molecule are provided. The linear double-stranded RNA molecule or the recombinant expression vector is useful for a method of reducing expression of target genes in a cell, the method comprising introducing the linear double-stranded RNA molecule or the recombinant expression vector into the cell, whereby the encoded siRNAs target different genes and reduce expression of the target genes. It was also proved that effective gene silencing activity can be induced when each siRNA unit within the linear double-stranded RNA molecule has 18 to 24 nucleotides and, additionally, the gene silencing activity is not affected by inverted orientation of an siRNA. | 2011-01-13 |
20110008886 | METHODS AND MATERIALS FOR ISOLATING ISOGENIC ISLET CELLS - Compositions and methods for isolating and purifying islet cells are described. Islets obtained using such compositions and methods can be transplanted into diabetic patients. | 2011-01-13 |
20110008887 | EPHA4-POSITIVE HUMAN ADULT PANCREATIC ENDOCRINE PROGENITOR CELLS - The invention relates to the discovery of a selective cell surface marker that permits the selection of a unique subset of pancreatic stem cells having a high propensity to differentiate into insulin-producing cells or into insulin-producing cell aggregates. | 2011-01-13 |
20110008888 | Novel Genetic Approaches to Reduce or Inhibit Tumorgenicity of Human Embryonic Stem Cells and Derivatives Following Transplantation - Self-renewable embryonic stem cells (ESCs), derived from the inner cell mass of blastocysts, can propagate indefinitely in culture while maintaining their normal karyotypes and pluripotency to differentiate into all cell types. Therefore, ESCs may provide an unlimited supply of even specialized cells such as brain and heart cells for transplantation and cell-based therapies that are otherwise limited by donor availability. However, this promising application is hampered by concerns that ESCs or their multipotent derivatives also possess the potential to form malignant tumors after transplantation in vivo. The present invention provides for a novel genetic method to arrest undesirable cell division (of ESCs and other unwanted lineages) as a means to inhibit or eliminate their tumorgenic potential after transplantation. | 2011-01-13 |
20110008889 | SERPIN DRUGS FOR TREATMENT OF HIV INFECTION AND METHOD OF USE THEREOF - The invention includes compositions comprising substantially purified serpin that are useful in methods for the treatment and prevention of HIV, HSV or HCV infection. The invention also includes methods for the treatment and prevention of HIV, HSV or HCV infection comprising contacting a composition of the invention with a human patient or treating HIV, HSV or HCV infection by introducing into a cell susceptible to HIV, HSV or HCV infection, a DNA molecule encoding a serpin. | 2011-01-13 |
20110008890 | Self-Assembly of Peptide-Amphiphile Nanofibers Under Physiological Conditions - Peptide amphiphile compounds, compositions and methods for self-assembly or nanofibrous network formation under neutral or physiological conditions. | 2011-01-13 |
20110008891 | PARTIAL PEPTIDE OF LACRITIN - The invention provides a polypeptide comprising the amino acid sequence of SEQ ID NO: 1, which is a particular partial sequence of lacritin, and having an amino acid length of not more than 70 residues. The polypeptide of the invention can promote adhesion between a cell and an extracellular matrix, and can promote tear fluid secretion from lacrimal gland acinar cells. | 2011-01-13 |
20110008892 | METHODS OF TISSUE GENERATION AND TISSUE ENGINEERED COMPOSITIONS - Provided are methods and compositions for constructing stable mammalian embryonic epithelial tissues and organs as well as constructing kidney tissue, and treating renal failure. Disclosed are methods of using an active epithelial growth factor having the capability of effectuating induction of growth and morphogenesis is cells. | 2011-01-13 |
20110008893 | MEDIUM FOR MAMMALIAN SOMATIC CELLS AND ADDITIVE THEREFOR - Disclosed are a medium for mammalian somatic cells with which mammalian somatic cells can be grown effectively when the mammalian somatic cells are cultured, while reducing the amount of serum to be added to the medium as much as possible or without adding serum thereto, and an additive to constitute the medium. By blending of a ligand for an endothelial cell differentiation gene (Edg) family receptor and a ligand for a serotonin receptor to a medium, somatic cells of mammals can be grown even in cases where the medium does not contain serum at all or contains only a small amount thereof. | 2011-01-13 |
20110008894 | LYOPHILIZED PLASMID/DNA TRANSFECTION REAGENT CARRIER COMPLEX - Disclosed is a novel formulation for the production of a lyophilized plasmid/DNA transfection reagent complex capable of serving as a carrier for additional free plasmids. Upon rehydration, this plasmid/DNA transfection reagent carrier can be used to introduce simultaneously the complexed plasmid and the additional free plasmids into animal cells. This novel formulation can be useful for viral particle production, gene transfer experiments like gene silencing experiments, reporter gene, or integration/selection experiments. | 2011-01-13 |
20110008895 | METHODS AND MATERIALS FOR THE REPRODUCIBLE GENERATION OF HIGH PRODUCER CELL LINES FOR RECOMBINANT PROTEINS - The invention lies in the field of production of recombinant gene products in eukaryotic cells. The invention refers to methods and materials for the fast and reproducible generation of production cells lines suitable for large scale production of recombinant gene products. The invention encompasses specific vector systems, genetic engineered host-cells and methods of use. | 2011-01-13 |
20110008896 | Paint for Detection of Radiological or Chemical Agents - A paint that warns of radiological or chemical substances comprising a paint operatively connected to the surface, an indicator material carried by the paint that provides an indication of the radiological or chemical substances, and a thermo-activation material carried by the paint. In one embodiment, a method of warning of radiological or chemical substances comprising the steps of painting a surface with an indicator material, and monitoring the surface for indications of the radiological or chemical substances. In another embodiment, a paint is operatively connected to a vehicle and an indicator material is carried by the paint that provides an indication of the radiological or chemical substances. | 2011-01-13 |
20110008897 | Paint for Detection Of Corrosion and Warning of Chemical and Radiological Attack - A system for warning of corrosion, chemical, or radiological substances. The system comprises painting a surface with a paint or coating that includes an indicator material and monitoring the surface for indications of the corrosion, chemical, or radiological substances. | 2011-01-13 |
20110008898 | Method for Simply Quantitatively Determining Hexavalent Chromium Technical Field - Provided is a method for simply quantitatively determining hexavalent chromium, including: separately bringing a plurality of test solutions into contact with a sample, the plurality of test solutions each containing a color change agent which changes in color upon reaction with hexavalent chromium, and an acid which dissolves the sample, the plurality of test solutions having different contents of the acid from each other; detecting color change in each of the test solutions; and when the color change is detected, specifying a range of content of hexavalent chromium in the sample on the basis of the content of the acid in a test solution with the color changed among the plurality of test solutions. | 2011-01-13 |
20110008899 | APPARATUS FOR DETERMINING THE COMPOSITION OF A SPECIMEN, IN PARTICULAR ONE CONTAINING PROTEIN - An apparatus and a method for determining the composition of a protein-containing specimen has a combustion chamber for the combustion of the specimen, an exhaust gas line connected to a combustion chamber heated by a heating device, a combustion control device, an oxygen inflow line opening into the combustion chamber with an oxygen inflow valve, which can be operated by means of the control device, and an analyser connected to the combustion chamber. An oxygen sensor connected to the control device determines the oxygen content in the combustion gases. The oxygen content is determined in time intervals or continuously during combustion. If a pre-specifiable concentration of oxygen is not achieved, a definable quantity of oxygen is injected into the combustion chamber by the oxygen inflow valve. After complete combustion of the specimen, the combustion gases are delivered to the analyser to determine nitrogen, carbon dioxide, sulphur dioxide and/or water content. | 2011-01-13 |
20110008900 | DEPLETION OF PLASMA PROTEINS - This invention relates to methods of analysis, and in particular to methods for the preliminary fractionation of samples in which low abundance molecules of interest, for example proteins, polysaccharides or fatty acids, are present together with more abundant molecules of little or no interest. In particular, the invention relates to methods of depletion of high abundance proteins from biological samples. Products and kits for use in the method are also disclosed, and form part of the invention. In one aspect, the invention provides a method of depleting a high-abundance molecule from a biological sample, comprising the steps of a) subjecting the sample to affinity depletion using an affinity support with high affinity for a high abundance molecule, and/or b) immunodepletion using an affinity support coupled to an antibody directed against whole or previously fractionated plasma or serum. | 2011-01-13 |
20110008901 | APOLIPOPROTEIN CIII IN PRE- AND TYPE 2 DIABETES - The present invention is directed to diagnosing, determining, and/or monitoring type 2 diabetes, pre-diabetes, insulin resistance, and their related conditions by detecting levels and modulations of ApoCIII and its variants. The present invention is also directed to methods for identifying and evaluating therapeutic treatments for type 2 diabetes, pre-diabetes, insulin resistance, and their related conditions by monitoring ApoCIII and its variants. | 2011-01-13 |
20110008902 | METHOD AND DEVICE FOR STUDYING TRANSPORT OF AN AGENT ACROSS A BILAYER MEMBRANE IN BIOANALYTICAL SENSOR APPLICATIONS - The present invention provides a method for studying transport of an agent across a membrane comprising the steps a) providing at least one surface with a bilayer structure tethered to the surface, said bilayer structure comprising a detection volume, b) contacting the bilayer with at least one agent to be analysed, and c) detecting a change in refractive index in the detection volume resulting from transportation of the agent across the membrane. Further there is provided a device comprising a) at least one surface, b) at least one bilayer structure tethered to the surface, and c) at least one sensor capable of detecting a change in refractive index in a detection volume, wherein the bilayer structure encloses a first volume of the detection volume and wherein the volume not enclosed by the bilayer structure but within the detection volume is a second volume and wherein the ratio between the first volume and second volume is above about 0.001. | 2011-01-13 |
20110008903 | METHODS AND KITS FOR DETERMINING THE OCCURRENCE OF A LIVER DISEASE IN A SUBJECT - The present application relates to methods for determining the occurrence of a liver disease in a subject by particular polypeptides biomarkers, and to kits using such biomarkers. | 2011-01-13 |
20110008904 | METHOD FOR DETERMINING IF A PATIENT HAS A TRAUMATIC BRAIN INJURY AND RELATED APPARATUS - A method for determining if a patient has a traumatic brain injury includes obtaining a body specimen from the patient, determining the concentration of marinobufagenin in the body specimen, comparing the concentration of marinobufagenin to the concentration in such body specimens in normal persons, and if the marinobufagenin concentration is substantially above the concentration of a normal person, concluding traumatic brain injury exists. In a preferred embodiment, a substantial elevation is deemed to be an increase of about 30 percent above the marinobufagenin concentration of a normal person. The body specimen may be blood or urine. If a substantial elevation is deemed to exist, the magnitude from the departure from the concentration of a normal person may be employed in determining the timing and nature of treatment provided to the patient. The method may be repeated at predetermined intervals to monitor changes in the marinobufagenin with time. Corresponding apparatus is provided. | 2011-01-13 |
20110008905 | SYSTEM FOR DETECTING POLYNUCLEOTIDES - The present invention relates to methods for detecting the presence or amount of a target polynucleotide. A polynucleotide, target nucleic acid analog, and dye are combined to form a mixture. The optical property of the dye is observed after the mixture is exposed to a stimulating means. Optionally, after the stimulating means is employed, the mixture is compared to a reference value characteristic of the rate of change in the optical property of the dye in a similar mixture containing a known amount of a target polynucleotide/nucleic acid analog hybrid to determine a relative rate of change in the optical property. The change in a property of the mixture after exposure thereof to a stimulating means or the relative rate of change in the optical property of dye in the mixture is correlated with the presence or amount of the specified target polynucleotide in the sample. | 2011-01-13 |
20110008906 | Genetic Association of Polymorphisms in Perilipin (PLIN) Gene With Resistance to Weight Loss - Diagnostics and therapeutics for resistance to weight-loss, which are based upon the identification of a subject's PLIN polymorphisms, haplotype and genotype pattern, are described in this invention. | 2011-01-13 |
20110008907 | SYSTEM USING SELF-CONTAINED PROCESSING MODULE FOR DETECTING NUCLEIC ACIDS - A method and apparatus are provided for processing a nucleic acid. The apparatus includes a disposable self-contained processing module that contains the nucleic acid and substantially all of the fluids to effect a nanoparticle hybridization test, a pump coupled to the processing module, a valving system disposed between the pump and processing module and a control system coupled to the pump and valving system causing the processing fluids to interact with the nucleic acid to effect a sandwich hybridization test using nanoparticles. | 2011-01-13 |
20110008908 | APPARATUS AND METHOD FOR SEPARATING AND ANALYZING BLOOD - An apparatus, comprising at least separating means ( | 2011-01-13 |
20110008909 | Assay Device - Disclosed is an assay device for the determination of the presence and/or amount of a species in a liquid sample, the assay device comprising one or more reagents for providing an analyte of interest wherein the assay device further comprises a control species which is capable of interacting with the one or more reagents to provide a detectable control antigen. | 2011-01-13 |
20110008910 | METHOD FOR THE IMMOBILIZATION OF A CAPTURE MOLECULE ON A SOLID SUPPORT - This invention is in the field of diagnostic assays, more in particular immunoassays wherein a capture molecule is immobilized on a solid support in order to capture an analyte. The invention relates to a method for the immobilization of a capture molecule on a solid support wherein the capture molecule is covalently attached to a biotin molecule to obtain a biotinylated capture molecule and wherein the biotinylated capture molecule is subsequently contacted with a high affinity binding member to form an capture molecule complex where after the capture molecule complex is contacted with the solid support. | 2011-01-13 |
20110008911 | DIAGNOSTIC METHOD FOR DISORDERS USING COPEPTIN - The use of copeptin as diagnostic marker for the determination of the release of vasopressin, especially in connection with disorders associated with non-physiological alterations of vasopressin release from the neurohypophysis, especially for detection and early detection, diagnosing and monitoring of the course of cardiovascular diseases, renal and pulmonary diseases as well as shock, including septic shock, sepsis and diseases/disorders of the central nervous system and neurodegenerative diseases. | 2011-01-13 |
20110008912 | Polymer-coated substrates for binding biomolecules and methods of making and using Thereof - Described herein are polymer-coated substrates for binding biomolecules and methods of making and using thereof. | 2011-01-13 |
20110008913 | TUMOR SUPPRESSOR GENE - A full-length cDNA encoding novel proteins involved in the control of cell proliferation (human Gros1-L and S) was successfully isolated from the human testis cDNA libraries. A full-length cDNA encoding the mouse homologues of the human Gros1 (mouse Gros1-L and S) was also isolated. The colony forming activity of cells exogenously expressing Gros1-L was significantly reduced, while that of cells expressing Gros1 antisense RNA was significantly increased. | 2011-01-13 |
20110008914 | Biomarkers for the Diagnosis and Treatment of Pancreatic Cancer - Compositions and methods which indicate an increased risk for pancreatic carcinoma are disclosed. | 2011-01-13 |
20110008915 | METHOD FOR USE IN MAKING ELECTRONIC DEVICES HAVING THIN-FILM MAGNETIC COMPONENTS - Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness. | 2011-01-13 |
20110008916 | Proximity Head Heating Method and Apparatus - Provided is an apparatus and a method for heating fluid in a proximity head. A method for semiconductor wafer processing, includes providing liquid to a proximity head including a heating portion, heating the liquid within the heating portion of the proximity head and delivering the heated liquid to a surface of a semiconductor wafer for use in a wafer processing operation including forming a meniscus between the proximity head and the surface of the semiconductor wafer. | 2011-01-13 |
20110008917 | HIGH-POWER OPTICAL BURN-IN - Semiconductor lasers are aged to identify weak or flawed devices, resulting in improved reliability of the remaining devices. The lasers can be aged using a high-power optical burn-in that includes providing a high drive current to the lasers for a period of time, and maintaining the ambient temperature of the lasers at a low temperature. After the high-power optical burn-in, the output of the lasers can be measured to determine if the lasers are operating within specifications. Those that are not can be discarded, while those that are can be further aged using a high-temperature thermal burn-in that includes providing a drive current to the lasers while maintaining the ambient temperature of the lasers at a high-temperature. | 2011-01-13 |
20110008918 | METHODS OF LOW LOSS ELECTRODE STRUCTURES FOR LEDS - Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode. | 2011-01-13 |
20110008919 | Electronic Textiles with Electronic Devices on Ribbons - Ribbons containing e.g. inorganic NMOS devices are assembled in electrical contact with ribbons containing e.g. PMOS devices (preferably organic) to enable flexible electronic textile circuits to be inexpensive and practical for a wide variety of functions. The use of ribbons provides flexibility, reduces costs, and allows testing during assembly and different processes to be efficiently used for different components. This is apparently the first time that ribbons (especially inorganic-device-containing ribbons) have been interconnected to form a flexible CMOS electronic textile. | 2011-01-13 |
20110008920 | Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor - A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape. | 2011-01-13 |
20110008921 | Method for Fabricating Flexible Display Device - A method for fabricating flexible display device includes the following steps. Firstly, a rigid substrate is provided. Secondly, a sacrificing layer is formed on the rigid substrate. Thirdly, an element layer is formed on the sacrificing layer. Fourthly, the sacrificing layer is etched by a gas and then gasified, so that the element layer is separated from the rigid substrate. Then, the element layer is adhered to a flexible substrate. Because products generated by the sacrificing layer reacting with the gas are gases, the products can be removed by air exhaust for simplifying process. Thus, the cost of the process of fabricating flexible display device can be decreased. | 2011-01-13 |
20110008922 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 2011-01-13 |
20110008923 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 2011-01-13 |
20110008924 | METHOD OF FORMING PATTERN ON GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask. | 2011-01-13 |
20110008925 | CMOS IMAGE SENSOR WITH REDUCED DARK CURRENT - A carbon-containing semiconductor layer is formed on exposed surfaces of a p− doped semiconductor layer abutting sidewalls of a shallow trench. Following formation of a dielectric layer on the carbon-containing semiconductor layer, a surface pinning layer having a p-type doping is formed underneath the carbon-containing semiconductor layer. A shallow trench isolation structure and a photodiode are subsequently formed. Diffusion of defects directly beneath the shallow trench isolation structure, now contained in the carbon-containing semiconductor layer, is suppressed. Further, boron diffusion into the shallow trench isolation structure and into the photodiode is also suppressed by the carbon-containing semiconductor layer, providing reduction in dark current and enhancement of performance of the photodiode. | 2011-01-13 |
20110008926 | SOLAR CELL WITH CONDUCTIVE MATERIAL EMBEDDED SUBSTRATE - Conductive material grids or lines embedded or partially embedded in a transparent substrate of a solar cell. The grids or lines can have a higher conductivity than the anode or they can have the same conductivity. The grids or lines increase the volume of the anode and, thus decrease sheet resistance of the same. | 2011-01-13 |
20110008927 | METHOD FOR PREPARING LIGHT ABSORPTION LAYER OF COPPER-INDIUM-GALLIUM-SULFUR-SELENIUM THIN FILM SOLAR CELLS - A preparation method of the light absorption layer of a copper-indium-gallium-sulfur-selenium film solar cell is provided. The method employs a non-vacuum liquid-phase chemical technique, which comprises following steps: forming source solution containing copper, indium, gallium, sulfur and selenium; using the solution to form a precursor film on a substrate by a non-vacuum liquid-phase process; drying and annealing the precursor film. Thus, a compound film of copper-indium-gallium-sulfur-selenium is gained. | 2011-01-13 |
20110008928 | Method for etching a see-through thin film solar module - This invention discloses a method for etching a see-through thin film solar module, comprising: printing ink paste which resists the etching of etching solutions in the protected area of the thin film solar module which is placed under a screen; drying and solidifying the ink paste; coating etching solutions on the thin film solar module; and removing the ink paste. The method of this invention can accurately position the see-through area, achieve various selections of see-through patterns, facilitate the realization of the see-through function in large-area thin film solar modules, and alleviate the problem that a short circuit easily occurs in a see-through thin film solar module. | 2011-01-13 |
20110008929 | ALIGNED POLYMERS FOR AN ORGANIC TFT - A method for forming an electronic device having a semiconducting active layer comprising a polymer, the method comprising aligning the chains of the polymer parallel to each other by bringing the polymer into a liquid-crystalline phase. | 2011-01-13 |
20110008930 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith. | 2011-01-13 |
20110008931 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced. | 2011-01-13 |
20110008932 | METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE - Provided is a semiconductor package and method of manufacturing same. The method includes: forming a plurality of semiconductor chips which have the same pattern direction on a semiconductor substrate, each of which includes a memory cell region, a peripheral region and a pad region, and in each of which the pad region is disposed in an edge region; separating the semiconductor chips, which are formed on the semiconductor substrate, from one another; and disposing semiconductor chips, which are selected from the separated semiconductor chips, on a package substrate by changing the pattern directions of the selected semiconductor chips and arranging pad regions of the selected semiconductor chips in a center region of the package substrate. | 2011-01-13 |
20110008933 | DUAL SIDE COOLING INTEGRATED POWER DEVICE MODULE AND METHODS OF MANUFACTURE - An integrated power device module including a lead frame having first and second spaced pads, one or more common source-drain leads located between the first and second pads, and one or more drain leads located on the outside of the second pad. First and second transistors are flip chip attached respectively to the first and second pads, wherein the source of the second transistor is electrically connected to the one or more common source-drain leads. A first clip is attached to the drain of the first transistor and electrically connected to the one or more common source-drain leads. A second clip is attached to the drain of the second transistor and electrically connected to the one or more drain leads located on the outside of the second pad. Molding material encapsulates the lead frame, the transistors, and the clips to form the module. | 2011-01-13 |
20110008934 | NEAR CHIP SCALE PACKAGE INTEGRATION PROCESS - Flip chip ball grid array semiconductor devices and methods for fabricating the same. In one example, a near chip scale method of semiconductor die packaging may comprise adhering the die to a substrate in a flip chip configuration, coating the die with a first polymer layer, selectively removing the first polymer layer to provide at least one opening to expose a portion of the die, and depositing a first metal layer over the first polymer layer, the first metal layer at least partially filling the at least one opening to provide an electrical contact to the die, and including a portion that substantially surrounds the die in a plane of an upper surface of the first metal layer to provide an electromagnetic shield around the die. | 2011-01-13 |
20110008935 | SEMICONDUCTOR DIE PACKAGE INCLUDING LEADFRAME WITH DIE ATTACH PAD WITH FOLDED EDGE - A semiconductor die package is disclosed. The semiconductor die package comprises a leadframe structure with a die attach pad including a die attach surface, a folded edge structure and an opposite surface opposite to the die attach surface. A plurality of leads extending laterally away from the die attach pad. A semiconductor die comprising a first surface and a second surface is attached to the semiconductor die, and a molding material is around at least a portion of the leadframe structure and at least a portion of the semiconductor die. The opposite surface is exposed through the molding material and terminal ends of the leads do not extend past lateral edges of the molding material. | 2011-01-13 |
20110008936 | Semiconductor Device Having Grooved Leads to Confine Solder Wicking - A packaged surface-mount semiconductor device has the outer, un-encapsulated lead segments structured in five adjoining portions: The first portion protrudes from the encapsulation about horizontally; the second portion forms a convex bend downwardly; the third portion is approximately straight downwardly; the fourth portion forms a concave bend upwardly; and the fifth portion is straight horizontally. Each segment has across the width a first groove in the third portion, either on the bottom surface or on the top surface. Preferably, the groove is about 2 leadframe thicknesses vertically over the bottom surface of the fifth lead portion. When stamped, the groove may have an angular outline about 5 and 50 μm deep; when etched, the groove may have an approximately semicircular outline about 50 to 125 μm deep. A second groove may be located in the second segment portion; a third groove may be located in the transition region from the third to the fourth segment portions. | 2011-01-13 |
20110008937 | SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES FOR LOGIC AND MULTILEVEL MEMORY APPLICATIONS - A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Si1-xGex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising Ge/Si1-yGey and a covering region comprising SiO2 and enclosing the center region. | 2011-01-13 |
20110008938 | THIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM - Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen. | 2011-01-13 |
20110008939 | Method of making a trench MOSFET having improved avalanche capability using three masks process - A method of forming trench MOSFET structure having improved avalanche capability is disclosed. In a preferred embodiment according to the present invention, only three masks are needed in the fabricating process, wherein the source region is formed by performing source Ion Implantation through contact open region of a thick contact interlayer for saving source mask. Furthermore, said source region has a doping concentration along channel region lower than along contact trench region, and source junction depth along channel region shallower than along contact trench, and source doping profile along surface of epitaxial layer has Guassian-distribution from trenched source-body contact to channel region. | 2011-01-13 |
20110008940 | SELF-ALIGNED V-CHANNEL MOSFET - Forming a high-κ/metal gate field effect transistor using a gate last process in which the channel region has a curved profile thus increasing the effective channel length improves the short channel effect. During the high-κ/metal gate process, after the sacrificial materials between the sidewall spacers are removed, the exposed semiconductor substrate surface at the bottom of the gate trench cavity is etched to form a curved recess. Subsequent deposition of high-κ gate dielectric layer and gate electrode metal into the gate trench cavity completes the high-κ/metal gate field effect transistor having a curved channel region that has a longer effective channel length. | 2011-01-13 |
20110008941 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device, including (a) etching a semiconductor substrate to form a first trench defining an active region; (b) forming a first spacer on sidewalls of the first trench; (c) etching a bottom of the first trench to form a second trench; (d) etching a sidewall of the second trench to form a third trench including an undercut space; (e) forming a device isolation structure that fills the first, second and third trenches; (f) etching the semiconductor substrate of a gate region to form a recess; and (g) forming a gate that fills the recess. | 2011-01-13 |
20110008942 | SEMICONDUCTOR DEVICE HAVING ASYMMETRIC BULB-TYPE RECESS GATE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a silicon substrate; a device isolation structure formed in the silicon substrate to delimit an active region which has a pair of gate forming areas, a drain forming area between the gate forming areas, and source forming areas outside the gate forming areas; an asymmetric bulb-type recess gate formed in each gate forming area of the active region and having the shape of a bulb on the lower end portion of the sidewall thereof facing the source forming area; and source and drain areas respectively formed on the surface of the substrate on both sides of the asymmetric bulb-type recess gate. | 2011-01-13 |
20110008943 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area. | 2011-01-13 |
20110008944 | Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentrations - A semiconductor structure includes a semiconductor substrate; a first high-voltage well (HVW) region of a first conductivity type overlying the semiconductor substrate; a second well region of a second conductivity type opposite the first conductivity type overlying the semiconductor substrate and laterally adjoining the first well region; a gate dielectric extending from over the first well region to over the second well region; a drain region in the second well region; a source region on an opposite side of the gate dielectric than the drain region; and a gate electrode on the gate dielectric. The gate electrode includes a first portion directly over the second well region, and a second portion directly over the first well region. The first portion has a first impurity concentration lower than a second impurity concentration of the second portion. | 2011-01-13 |
20110008945 | Nonvolatile memory device made of resistance material and method of fabricating the same - A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, a lower electrode is connected to the switching element, and an insulating layer is formed on the lower electrode to a predetermined thickness. The insulating layer has a contact hole exposing the lower electrode. A data storage layer is filled in the contact hole and the data storage layer is formed of transition metal oxide. An upper electrode is formed on the insulating layer and the data storage layer. | 2011-01-13 |
20110008946 | Manufacturing methods of SOI substrate and semiconductor device - A manufacturing method of an SOI substrate and a manufacturing method of a semiconductor device are provided. When a large-area single crystalline semiconductor film is formed over an enlarged substrate having an insulating surface, e.g., a glass substrate by an SOI technique, the large-area single crystalline semiconductor film is formed without any gap between plural single crystalline semiconductor films, even when plural silicon wafers are used. An aspect of the manufacturing method includes the steps of disposing a first seed substrate over a fixing substrate; tightly arranging a plurality of single crystalline semiconductor substrates over the first seed substrate to form a second seed substrate; forming a large-area continuous single crystalline semiconductor film by an ion implantation separation method and an epitaxial growth method; forming a large-area single crystalline semiconductor film without any gap over a large glass substrate by an ion implantation separation method again. | 2011-01-13 |
20110008947 | APPARATUS AND METHOD FOR PERFORMING MULTIFUNCTION LASER PROCESSES - Embodiments of the present invention generally relate to a system used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system is adapted to form thin film solar cell devices by accepting a large unprocessed substrate and performing multiple deposition, material removal, cleaning, bonding, testing, and sectioning processes to form one or more complete, functional, and tested solar cell devices in custom sizes and/or shapes that can then be shipped to an end user for installation in a desired location to generate electricity. In one embodiment, the system is adapted to form one or more BIPV panels in custom sizes and/or shapes from a single large substrate for shipment to an end user. | 2011-01-13 |
20110008948 | METHOD FOR TRANSFERRING AN EPITAXIAL LAYER - A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer. | 2011-01-13 |
20110008949 | ADHESIVE SHEET FOR DICING SEMICONDUCTOR WAFER AND METHOD FOR DICING SEMICONDUCTOR WAFER USING THE SAME - An adhesive sheet for dicing a semiconductor wafer having a laminate comprises; a base film, an intermediate layer and an adhesive layer, the intermediate layer is formed by a thermoplastic resin having a melting point of 50 to 100° C.; and the base film has a higher melting point than the intermediate layer as well as a method for dicing a semiconductor wafer comprises the steps of: adhering the adhesive sheet according to the above to a corrugated surface of a semiconductor wafer, and dicing the semiconductor wafer. | 2011-01-13 |
20110008950 | Remote Hydrogen Plasma With Ion Filter for Terminating Silicon Dangling Bonds - Apparatus and methods for repairing silicon dangling bonds resulting from semiconductor processing are disclosed. The silicon dangling bonds can be repaired by introducing hydrogen radicals with substantially no hydrogen ions into the processing chamber to react with the silicon dangling bonds, eliminating them. | 2011-01-13 |
20110008951 | Method of manufacturing strained-silicon semiconductor device - A method for fabricating a strained-silicon semiconductor device to ameliorate undesirable variation in selectively grown epitaxial film thickness. The layout or component configuration for the proposed semiconductor device is evaluated to determine areas of relatively light or dense population in order to determine whether local-loading-effect defects are likely to occur. If a possibility of such defects occurring exists, a dummy pattern of epitaxial structures may be indicated. If so, the dummy pattern appropriate to the proposed layout is created, incorporated into the mask design, and then implemented on the substrate along with the originally-proposed component configuration. | 2011-01-13 |
20110008952 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated. | 2011-01-13 |
20110008953 | METHOD FOR MAKING SEMICONDUCTOR INSULATED-GATE FIELD-EFFECT TRANSISTOR HAVING MULTILAYER DEPOSITED METAL SOURCE(S) AND/OR DRAIN(S) - A metal source/drain field effect transistor is fabricated such that the source/drain regions are deposited, multilayer structures, with at least a second metal deposited on exposed surfaces of a first metal. | 2011-01-13 |
20110008954 | INSULATING BUFFER FILM AND HIGH DIELECTRIC CONSTANT SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode. | 2011-01-13 |
20110008955 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode. | 2011-01-13 |
20110008956 | SELF-ASSEMBLY PATTERN FOR SEMICONDUCTOR INTEGRATED CIRCUIT - A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature. | 2011-01-13 |
20110008957 | METAL INTERCONNECTION METHOD OF SEMICONDUCTOR DEVICE - A metal interconnection method of a semiconductor device includes forming a copper layer on a semiconductor substrate and planarizing the copper layer. Two thermal treatments are performed at different temperatures between formation of the copper layer and planarization of the copper layer. | 2011-01-13 |
20110008958 | Methods of Selectively Growing Nickel-Containing Materials - The invention includes methods of electroless plating of nickel selectively on exposed conductive surfaces relative to exposed insulative surfaces. The electroless plating can utilize a bath which contains triethanolamine, maleic anhydride and at least one nickel salt. | 2011-01-13 |
20110008959 | METHOD OF ETCHING A SEMICONDUCTOR WAFER - A method for anisotropically plasma etching a semiconductor wafer is disclosed. The method comprises supporting a wafer in an environment operative to form a plasma, such as a plasma reactor, and providing an etching mixture to the environment. The etching mixture comprises at least one etch component, at least one passivation component, and at least one passivation material removal component. | 2011-01-13 |
20110008960 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device is provided. The method includes forming a bottom electrode material layer containing aluminum and cupper over the substrate. An insulating material layer and a top electrode material layer are sequentially formed on the surface of the bottom electrode material layer. A photoresist pattern is formed on the top electrode material layer, and then the top electrode material layer is patterned to form a top electrode by using the photoresist pattern as mask. The photoresist pattern is removed by plasma ash and then an alloy process is performed to the bottom electrode material layer. Thereafter, the insulating material layer, and the bottom electrode material layer are patterned to form a patterned insulating layer and a patterned bottom electrode layer. | 2011-01-13 |
20110008961 | METHOD FOR FABRICATING INTEGRATED CIRCUIT STRUCTURES - A method for fabricating an integrated circuit structure includes the steps of forming a second dielectric layer on a substrate including a first conductive layer and a first dielectric layer, forming the second dielectric layer on the first conductive layer and the first dielectric layer, forming a hole exposing the first conductive layer in the second dielectric layer, forming a barrier layer inside the hole, and forming a second conductive layer on the barrier layer. In one embodiment of the present invention, the forming of the barrier layer comprises the steps of forming a metal layer in the hole, and performing a treating process in an atmosphere including a plasma formed from a gas including oxidant to form a metal oxide layer on the metal layer. In another embodiment of the present invention, the forming of the barrier layer comprises the steps of forming a metal nitride layer in the hole, and performing a treating process in an atmosphere including a plasma formed from a gas including oxidant to form a metal oxide layer on the metal and metal nitride layer. | 2011-01-13 |
20110008962 | METHOD FOR FABRICATING A MULTILAYER MICROSTRUCTURE WITH BALANCING RESIDUAL STRESS CAPABILITY - A method for fabricating a multilayer microstructure with balancing residual stress capability includes forming a multilayer microstructure on a substrate and conducting a step of isotropic plasma etching. The multilayer microstructure includes a first metal layer, a second metal layer, a metal via layer and an insulating layer. The first metal layer and the second metal layer are patterned and aligned symmetrically so as to form etching through holes. The metal via layer surrounds each etching through hole. The insulating layer fills each etching through hole and is disposed between the substrate and the first metal layer. The step of isotropic chemical plasma etching removes the insulating layer in each etching through hole and the insulating layer between the substrate and the metal layer so as to form a suspended multilayer microstructure on the substrate. | 2011-01-13 |
20110008963 | METHOD FOR MAKING CONDUCTIVE FILM AND FILM MAKING EQUIPMENT - The disclosure discloses a method for making a conductive film and a film making equipment. The method includes providing a substrate having two opposite straight sides, a first side connecting the straight sides, and a second side connecting the straight sides and opposite to the first side. A film layer structure is formed on the substrate. A conductive film is formed by pulling out the film layer structure through the first side of the substrate. | 2011-01-13 |
20110008964 | SYSTEMS AND METHODS FOR DELIVERY OF FLUID-CONTAINING PROCESS MATERIAL COMBINATIONS - Common sources of different (e.g., concentrated) process materials are controllably supplied to multiple blending manifolds associated with multiple process tools, processing stations, or other points of use, to create an independently controllable process material blend for each tool, station, or point of use. Multi-constituent process materials may be circulated from a supply container through a blending manifold to a return container to ensure homogeneity until immediately prior to blending and use. Such containers may include liner-based containers adapted for pressure dispensation. | 2011-01-13 |
20110008965 | POLISHING COMPOSITION AND POLISHING METHOD - To provide a polishing composition which has a high removal rate and enables to suppress occurrence of dishing and erosion, in polishing of a surface to be polished in the production of a semiconductor integrated circuit device. A chemical mechanical polishing composition for polishing a surface to be polished of a semiconductor integrated circuit device comprises (A) fine oxide particles, (B) pullulan, and (C) water. The polishing composition further contains (D) an oxidizing agent, and (E) a compound represented by the formula 1: | 2011-01-13 |
20110008966 | PLANARIZATION METHOD USING HYBRID OXIDE AND POLYSILICON CMP - A method of planarizing a semiconductor device is provided. The semiconductor device includes a substrate, first and second components provided on the surface of the substrate, and a first material provided between and above the first and second components. The first component has a height greater than a height of the second component. The method includes performing a first polishing step on the semiconductor device to remove the first material above a top surface of the first component, to remove the first material above a top surface of the second component, and to level the top surface of the first component. The method also includes performing a second polishing step on the semiconductor device to planarize the top surfaces of the first and second components. | 2011-01-13 |
20110008967 | CMP SLURRY AND A POLISHING METHOD USING THE SAME - The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. | 2011-01-13 |
20110008968 | METHOD AND MATERIAL FOR FORMING A DOUBLE EXPOSURE LITHOGRAPHY PATTERN - A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers. | 2011-01-13 |
20110008969 | FREQUENCY DOUBLING USING SPACER MASK - A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask. | 2011-01-13 |