Class / Patent application number | Description | Number of patent applications / Date published |
556042000 | Vanadium, niobium, or tantalum containing (V, Nb, or Ta) | 13 |
20100010248 | IMIDE COMPLEX, METHOD FOR PRODUCING THE SAME, METAL-CONTAINING THIN FILM AND METHOD FOR PRODUCING THE SAME - Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M | 01-14-2010 |
20100029968 | ASYMMETRIC REACTION CATALYST AND METHOD FOR PREPARING OPTICALLY ACTIVE COMPOUND USING THE SAME - An asymmetric reaction catalyst is obtained by mixing a pentavalent niobium compound and an optically active triol or tetraol having a binaphthol structure of R or s configuration, and the triol is represented by the following formula: | 02-04-2010 |
20100204499 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDES - Processes are provided for producing transition metal amides. In methods according to this invention, at least a halogenated transition metal and an amine are combined in a solvent to produce an intermediate composition and an alkylated metal or a Grignard reagent is added to the intermediate composition to produce the transition metal amide. | 08-12-2010 |
20100240918 | TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS - Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent. | 09-23-2010 |
20100331562 | PROCESSES FOR PRODUCING TRANSITION METAL AMIDO AND IMIDO COMPOUNDS - Processes are provided for producing transition metal amidos and/or imidos. In methods according to this invention, at least one halogenated transition metal, an amine compound and a solvent are combined, followed by the addition of an alkylated metal or a Grignard reagent to produce the transition metal amide and/or imido. | 12-30-2010 |
20120016147 | METHOD FOR PRODUCING AROMATIC COMPOUND POLYMER - A method for producing an aromatic compound polymer comprising oxidatively polymerizing one or more of aromatic compound(s) having two or more hydrogen atoms directly connected to aromatic ring(s), in the presence of an oxidizing agent, wherein the method employs a catalyst composed of a transition metal complex or a catalyst prepared from a transition metal complex and an activating agent, and said catalyst has a parameter P defined by the following formula (A) of 0.50 or more, and a parameter Eo defined by the following formula (B) of 0.50 [V] or more: | 01-19-2012 |
20120065420 | DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS - Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films, The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes. | 03-15-2012 |
20140005428 | METAL-ORGANIC FRAMEWORK MATERIALS WITH ULTRAHIGH SURFACE AREAS | 01-02-2014 |
20140200361 | METHOD FOR PREPARING POROUS ORGANIC-INORGANIC HYBRID MATERIALS - The present invention relates to a method for preparing a porous organic-inorganic hybrid, which comprises gelling a reaction mixture containing a metal precursor, a water-soluble additive and water or water-containing organic solvent at a gelling temperature of 30° C.˜100° C. to obtain an organogel-containing solution having a viscosity of 2 to 50,000 (cps), subsequently ageing the solution at said gelling temperature under stirring; and subsequently heating the organogel-containing solution at a temperature between said gelling temperature and 250° C. to crystallize the solution. | 07-17-2014 |
556043000 | Carbon bonded directly to the metal (e.g., cyclopentadienyl vanadium tetracarbonyl, etc.) | 2 |
20090043119 | TANTALUM COMPOUND, METHOD FOR PRODUCING SAME, TANTALUM-CONTAINING THIN FILM AND METHOD FOR FORMING SAME - Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element. | 02-12-2009 |
20140051878 | Metal Complexes with N-Aminoamidinate Ligands - The invention relates to new metal complexes having N-aminoamidinate ligands, more particularly metal complexes having N,N′-bis(dimethylamino)acetamidinate, N,N′-bis(dimethylamino)formamidinate, N-dimethylaminoacetamidinate or N-dimethylamino-N′-isopropyl-acetamidinate ligands as well as to their preparation and use. The metal complexes are characterized by a five-membered chelate ring. The metal complexes are formed with the metals from the main groups of the PTE, but also with transition-group elements such as tantalum (Ta), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu) or zinc (Zn), and also with precious metals such as palladium (Pd). | 02-20-2014 |
556044000 | The metal is bonded directly to X of a -C(=X)X- group, wherein the X's are the same or diverse chalcogens (e.g., vanadyl xanthate, etc.) | 2 |
20090131703 | Preparation Method of Porous Organic Inorganic Hybrid Materials - The present invention relates to a synthesis method of porous hybrid inorganic-organic materials that can be applied for adsorbents, gas storages, sensors, membranes, functional thin films, catalysts, catalyst supports, encapsulating guest molecules and separation of molecules by the pore structures. More specifically, the present invention relates to the synthesis method of nanocrystalline porous hybrid inorganic-organic materials. | 05-21-2009 |
20110118490 | Porous Organic-Inorganic Hybrid Materials with Crystallinity and Method for Preparing Thereof - Porous organic-inorganic hybrid materials with crystallinity and a method for preparing the same are provided. The method comprises preparing a reaction solution containing a mixture of at least one inorganic metal precursor, at least one organic compound which may act as a ligand, and a solvent (step 1); and forming porous organic-inorganic hybrid materials with crystallinity by reacting the reaction solution (step 2), wherein the reaction is carried out under the pressure of about 3 atm or less. | 05-19-2011 |