Class / Patent application number | Description | Number of patent applications / Date published |
451007000 | Controlling temperature | 18 |
20080311823 | Apparatus for heating or cooling a polishing surface of a polishing appratus - The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface. | 12-18-2008 |
20090253352 | Slicing Method - The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a cooling speed of the ingot when a slicing depth is equal to or above ⅔ of a diameter is controlled to perform slicing by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while controlling a supply temperature only in a period from the moment that the slicing depth of the ingot reaches at least ⅔ of the diameter to end of slicing. As a result, the slicing method is provided, in which rapid cooling of the ingot in the time close to end of slicing the ingot can be alleviated when a wire saw is used to slice the ingot, and generation of a nano-topography can be thereby suppressed and further high quality wafers having a uniform thickness are obtained by slicing. | 10-08-2009 |
20100151771 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus polishing a surface of a substrate, such as a semiconductor substrate. The polishing apparatus including a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate. | 06-17-2010 |
20100203806 | SEMICONDUCTOR MANUFACTURING APPARATUS - A semiconductor manufacturing apparatus comprising a platen holding a polishing pad; a polishing head including a pressurizing mechanism which presses a surface of a processing target substrate onto the polishing pad; and a plurality of temperature adjusters being provided in the platen in a radial direction of the platen and being capable of adjusting temperatures thereof independently from one another, wherein, when the surface of the processing target substrate is polished by rotating the platen and the polishing head, the temperatures of the temperature adjusters are changed, so that temperature adjustment can be performed selectively on a region ranging on the surface of the processing target substrate in a radial direction thereof. | 08-12-2010 |
20110159782 | SUBSTRATE POLISHING APPARATUS, SUBSTRATE POLISHING METHOD, AND APPARATUS FOR REGULATING TEMPERATURE OF POLISHING SURFACE OF POLISHING PAD USED IN POLISHING APPARATUS - An apparatus for polishing a substrate is provided. The apparatus includes: a rotatable polishing table supporting a polishing pad; a substrate holder configured to hold a substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate; a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad; a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface; and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector. | 06-30-2011 |
20120015587 | ACTIVE COOLANT FLOW CONTROL FOR MACHINING PROCESSES - A method for operating a machining tool, comprising: setting a flow rate and a pressure of a flow of coolant to a flow rate target and a pressure target, respectively, the coolant flow being provided to the machining tool; machining a work-piece using the machining tool; measuring the flow rate and the pressure of the flow of coolant; and detecting an anomaly with respect to the coolant flow; and taking a corrective action depending on the type of the detected anomaly. | 01-19-2012 |
20120034846 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature. | 02-09-2012 |
20120220195 | CMP APPARATUS, POLISHING PAD AND CMP METHOD - According to one embodiment, a CMP apparatus includes a supplying portion supplying a slurry to a surface portion of a polishing pad including water-soluble particles, a holding portion contacting an object to be polished with the surface portion of the polishing pad in a condition of holding the object, a temperature setting portion on the surface portion of the polishing pad, the temperature setting portion setting a temperature of the surface of the polishing pad. A control portion executes a first polishing step and a second polishing step after the first polishing step, the object is polished in a condition of setting the temperature of the surface of the polishing pad within a first temperature range in the first polishing step, and the object is polished in a condition of setting the temperature of the surface of the polishing pad within a second temperature range in the second polishing step. | 08-30-2012 |
20120220196 | POLISHING APPARATUS HAVING TEMPERATURE REGULATOR FOR POLISHING PAD - A substrate polishing apparatus includes: a polishing table supporting a polishing pad; a top ring configured to press the substrate against the polishing pad; and a pad temperature regulator configured to regulate a surface temperature of the polishing pad. The pad temperature regulator includes a pad contact element and a liquid supply system configured to supply a temperature-controlled liquid to the pad contact element. The pad contact element has a space therein and a partition that divide the space into a first liquid passage and a second liquid passage that are connected in series. At least one baffle substantially perpendicular to a radial direction of the polishing table is provided in each of the first liquid passage and the second liquid passage. | 08-30-2012 |
20120276816 | POLISHING METHOD - A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad. | 11-01-2012 |
20130023186 | METHOD AND APPARATUS FOR POLISHING A SUBSTRATE - A polishing apparatus polishes a surface of a substrate by pressing the substrate against a polishing pad on a polishing table. The polishing apparatus is configured to control a temperature of the polishing surface of the polishing pad by blowing a gas on the polishing pad during polishing. The polishing apparatus includes a pad temperature control mechanism having at least one gas ejection nozzle for ejecting a gas toward the polishing pad and configured to blow the gas onto the polishing pad to control a temperature of the polishing pad, and an atomizer having at least one nozzle for ejecting a liquid or a mixed fluid of a gas and a liquid and configured to blow the liquid or the mixed fluid onto the polishing pad to remove foreign matters on the polishing pad. The pad temperature control mechanism and the atomizer are formed into an integral unit. | 01-24-2013 |
20130115855 | POLISHING METHOD AND POLISHING APPARATUS - According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad. | 05-09-2013 |
20130217305 | HIGH HARDNESS MATERIAL WORKING METHOD AND WORKING APPARATUS - The present invention provides a method of working a high hardness material including the steps of heating the high hardness material, working the high hardness material by using a polishing tool, cooling the polishing tool at a position which is different from a worked part, and washing the polishing tool at a position which is different from the worked part. | 08-22-2013 |
20140364040 | SUBSTRATE POLISHING APPARATUS, SUBSTRATE POLISHING METHOD, AND APPARATUS FOR REGULATING TEMPERATURE OF POLISHING SURFACE OF POLISHING PAD USED IN POLISHING APPARATUS - An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector. | 12-11-2014 |
20150017881 | METHOD OF GRINDING SPRING ENDS AND SPRING END GRINDING MACHINE - A method of grinding spring ends of helical compression springs is carried out using a numerically controlled spring end grinding machine having a grinding unit, a loading unit and a control unit that controls the loading unit and the grinding unit. The grinding unit has a pair of grinding wheels including two rotatable grinding wheels between which is formed a grinding space. The loading unit has at least one loading plate substantially rotatable axially parallel to the grinding wheels and has a plurality of out-of-axis spring receptacles, each to receive a helical compression spring. | 01-15-2015 |
20150093968 | POLISHING APPARATUS AND METHOD - A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to forma substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector. | 04-02-2015 |
20160121452 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus capable of polishing a substrate while accurately measuring a temperature at a desired measuring point near a surface of the substrate is disclosed. The polishing apparatus includes: a polishing pad having a polishing surface for polishing a substrate; a polishing table supporting the polishing pad; a table motor configured to rotate the polishing table; a polishing head configured to press a surface of the substrate against the polishing surface of the polishing pad; a polishing liquid supply nozzle configured to supply a polishing liquid onto the polishing surface of the polishing pad; and a temperature sensor mounted to the polishing table. The temperature sensor is located so as to move across the surface of the substrate each time the polishing table makes one revolution. | 05-05-2016 |
20190143476 | Temperature Control of Chemical Mechanical Polishing | 05-16-2019 |