Class / Patent application number | Description | Number of patent applications / Date published |
438756000 | Silicon oxide | 12 |
20080200036 | Printable Etching Media For Silicon Dioxide and Silicon Nitride Layers - The present invention relates to a novel printable etching medium having non-Newtonian flow behaviour for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas. | 08-21-2008 |
20090075486 | SURFACE TREATMENT SOLUTION FOR THE FINE SURFACE PROCESSING OF A GLASS SUBSTRATE CONTAINING MULTIPLE INGREDIENTS - A surface treatment solution for finely processing a glass substrate containing multiple ingredients is used for the construction of liquid crystal-based or organic electroluminescence-based flat panel display devices without invoking crystal precipitation and/or increasing surface roughness. An etching solution of the invention contains, in addition to hydrofluoric acid (HF) and ammonium fluoride (NH | 03-19-2009 |
20100022096 | MATERIAL REMOVAL METHODS EMPLOYING SOLUTIONS WITH REVERSIBLE ETCH SELECTIVITIES - A method for removing (e.g., etching) different dielectric materials from a semiconductor substrate includes exposing the semiconductor substrate to a solution at temperatures below and at or above a set threshold. Below the threshold temperature, the solution removes one dielectric material (e.g., silicon nitride) faster than it removes another, different dielectric material (e.g., silicon oxide). At or above the threshold temperature, the selectivity of the solution is reversed. | 01-28-2010 |
20100035436 | Composition for etching silicon oxide layer, method for etching semiconductor device using the same, and composition for etching semiconductor device - A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater. | 02-11-2010 |
20110117752 | METHOD AND SYSTEM FOR ETCHING A SILICON DIOXIDE FILM USING DENSIFIED CARBON DIOXIDE - The present invention relates to a method and system for removing a sacrificial layer from an MEMS structure or from any other semiconductor substrate that includes a sacrificial layer. The above etching method and system use densified carbon dioxide, fluorine compounds, and co-solvents as the processing fluid and are capable of removing the sacrificial layer in a short period of time without incurring damage on the structural layer or incurring stiction between structures. In addition, the above etching method and system do not create etching residue and thus do not require a separate cleaning process. | 05-19-2011 |
20120009797 | METHOD TO THIN A SILICON-ON-INSULATOR SUBSTRATE - The invention concerns a method to thin an initial silicon-on-insulator substrate that has a layer of silicon oxide buried between a silicon carrier substrate and a silicon surface layer. This method is noteworthy in that it includes conducting a thermal oxidation treatment of the initial substrate to cause oxidation of part of the silicon surface layer and form a thermal oxide thereon; conducting a first cycle of etching followed by cleaning of the silicon surface layer after the thermal oxidation treatment, wherein the etching of the first cycle is conducted so as fully to remove the thermal oxide from the silicon surface layer to thin it and lift off all unstable parts of the initial substrate at edges thereof to form a thinned substrate; conducting, after the first cycle, a second cycle of etching followed by cleaning of the silicon surface layer, wherein the etching of the second cycle is conducted to remove from the surface of the thinned substrate, polluting particles formed during the first etching cycle and which have deposited thereupon, in order to obtain a final SOI substrate having a thinned surface layer which forms an active layer for the substrate. | 01-12-2012 |
20120070998 | Composition for Wet Etching of Silicon Dioxide - Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH | 03-22-2012 |
20130217235 | APPARATUS AND METHOD FOR CONTROLLING SILICON NITRIDE ETCHING TANK - A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs. | 08-22-2013 |
20130244443 | METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID - A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer. | 09-19-2013 |
20130244444 | METHOD OF PRODUCING A SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING LIQUID - A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer. | 09-19-2013 |
20140187052 | Selective Etching of Hafnium Oxide Using Diluted Hydrofluoric Acid - Provided are methods for processing semiconductor substrates having hafnium oxide structures as well as silicon nitride and/or silicon oxide structures. Etching solutions and processing conditions described herein provide high etching selectivity of hafnium oxide relative to these other materials. As such, the hafnium oxide structures can be removed (partially or completely) without significant damage to these other structures. In some embodiments, the etching selectivity of hafnium oxide relative to silicon oxide is at least about 10 and even at least about 30. Etching rates of hafnium oxide may be between 3 and 100 Angstroms per minute. A highly diluted water based solution of hydrofluoric acid, e.g., having a dilution ratio of 1000:1 to 10,000:1, may be used for etching to achieve these etching rates and selectivity levels. The solution may be maintained at a temperature of 25° C. to 90° C. during etching. | 07-03-2014 |
20160155647 | ETCH SYSTEM AND METHOD FOR SINGLE SUBSTRATE PROCESSING | 06-02-2016 |