Entries |
Document | Title | Date |
20080200010 | Method for Manufacturing Bonded Wafer - A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon oxide film is large at a time of ion implantation. Furthermore, since the silicon oxide film is rather thinner and thereby the ion implantation depth is relatively deeper, damages to the active layer and the buried silicon oxide film caused by the ion implantation can be reduced. | 08-21-2008 |
20080200011 | HIGH-TEMPERATURE, SPIN-ON, BONDING COMPOSITIONS FOR TEMPORARY WAFER BONDING USING SLIDING APPROACH - New compositions and methods of using those compositions as bonding compositions are provided. The compositions comprise a polymer dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process. | 08-21-2008 |
20080206958 | ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXIAL COMPRESSIVE STRAIN - The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer. | 08-28-2008 |
20080206959 | Peeling method - A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means. | 08-28-2008 |
20080213973 | METHOD OF FABRICATING A SUBSTRATE FOR A PLANAR, DOUBLE-GATED, TRANSISTOR PROCESS - A semiconductor fabrication process includes forming a sacrificial layer on a substrate of a donor wafer and implanting hydrogen ions into the substrate through the sacrificial layer to create a stress layer in the substrate. After forming the stress layer, multiple layer stacks are formed on the donor wafer substrate including a bottom gate conductor layer and a bottom gate dielectric layer. An upper surface of the donor wafer is bonded to an upper surface of a handle wafer. An oxide or low-k layer may be formed on the handle wafer. A portion of the substrate of the donor wafer is then cleaved. The bottom gate conductor layer is selected from the group including polysilicon, alpha silicon, alpha germanium, W, Ti, Ta, TiN, and TaSiN. | 09-04-2008 |
20080220588 | STRAINED Si MOSFET ON TENSILE-STRAINED SiGe-ON-INSULATOR (SGOI) - A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate including a tensile-strained SiGe alloy layer located atop an insulating layer; and a strained Si layer atop the tensile-strained SiGe alloy layer. The present invention also provides a method of forming the tensile-strained SGOI substrate as well as the heterostructure described above. The method of the present invention decouples the preference for high strain in the strained Si layer and the Ge content in the underlying layer by providing a tensile-strained SiGe alloy layer directly atop on an insulating layer. | 09-11-2008 |
20080242050 | Method for manufacturing semiconductor device - It is an object of the present invention to manufacture a semiconductor element and an integrated circuit that have high performance over a large-sized substrate with high throughput and high productivity. When single crystal semiconductor layers are transferred from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers divided such that they have the size of semiconductor elements to be manufactured are transferred to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. | 10-02-2008 |
20080242051 | Method for manufacturing semiconductor device - When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified. | 10-02-2008 |
20080248629 | Method for manufacturing semiconductor substrate - A method for manufacturing a semiconductor substrate is provided, which comprises a step of irradiating a single crystal semiconductor substrate with ions to form an embrittlement layer in the single crystal semiconductor substrate, a step of forming a silicon oxide film over the single crystal semiconductor substrate, a step of bonding the single crystal semiconductor substrate and a substrate having an insulating surface with the silicon oxide film interposed therebetween, a step of performing a thermal treatment, and a step of separating the single crystal semiconductor substrate with a single crystal semiconductor layer left over the substrate having the insulating surface. | 10-09-2008 |
20080254595 | Method for manufacturing SOI substrate - An SOI substrate having no worry about a fluctuation in electrical characteristics due to generation of oxygen donors is provided. | 10-16-2008 |
20080261378 | Method for Growth of Gan Single Crystal, Method for Preparation of Gan Substrate, Process for Producing Gan-Based Element, and Gan-Based Element - A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer ( | 10-23-2008 |
20080261379 | Method for manufacturing SOI substrate and semiconductor device - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 10-23-2008 |
20080261380 | Semiconductor Layer Structure And Method Of Making The Same - A method of forming a semiconductor structure includes providing a substrate and providing a detach region which is carried by the substrate. A device structure which includes a stack of crystalline semiconductor layers is provided, wherein the detach region is positioned between the device structure and substrate. The stack is processed to form a vertically oriented semiconductor device. | 10-23-2008 |
20080268617 | METHODS FOR SUBSTRATE SURFACE CLEANING SUITABLE FOR FABRICATING SILICON-ON-INSULATOR STRUCTURES - Methods for cleaning substrate surfaces utilized in SOI technology are provided. In one embodiment, the method for cleaning substrate surfaces includes providing a first substrate and a second substrate, wherein the first substrate has a silicon oxide layer formed thereon and a cleavage plane defined therein, performing a wet cleaning process on the surfaces of the first substrate and the second substrate, and bonding the cleaned silicon oxide layer to the cleaned surface of the second substrate. | 10-30-2008 |
20080268618 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In a process of forming a single-crystalline semiconductor layer bonded to a glass substrate by low-temperature heat treatment, before a bonding and separation step in which the single-crystalline semiconductor layer is bonded to the glass substrate, the glass substrate is heated at a temperature higher than a heat temperature in the bonding and separation step. In a bonding step between the single-crystalline semiconductor layer and the glass substrate, the single-crystalline semiconductor layer is heated at a temperature close to a strain point of the glass substrate, specifically at a temperature in a range from minus 50° C. to plus 50° C. of a strain point. Accordingly, the glass substrate is subjected to heat treatment in advance at a temperature higher than the temperature close to the strain point, specifically, at a temperature higher than the temperature in a range from minus 50° C. to plus 50° C. of the strain point. | 10-30-2008 |
20080280420 | Method for manufacturing substrate of semiconductor device - A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species, a step of forming a bonding layer over the semiconductor substrate, a step of bonding the semiconductor substrate and a substrate having an insulating surface with the bonding layer interposed therebetween, a step of separating the semiconductor substrate with a semiconductor layer left over the substrate having the insulating surface by heating at least the semiconductor substrate, and a step of reprocessing the semiconductor substrate from which the semiconductor layer is separated. | 11-13-2008 |
20080286937 | Manufacturing Method for Bonded Wafer - In a first ion implantation step (a1), a delamination-intended ion implantation layer | 11-20-2008 |
20080286938 | Semiconductor device and fabrication methods thereof - A method for packaging a semiconductor device disclosed. A substrate comprising a plurality of dies, separated by scribe line areas respectively is provided, wherein at least one layer is overlying the substrate. A portion of the layer within the scribe lines area is removed by photolithography and etching to form openings. The substrate is sawed along the scribe line areas, passing the openings. In alternative embodiment, a first substrate comprising a plurality of first dies separated by first scribe line areas respectively is provided, wherein at least one first structural layer is overlying the first substrate. The first structural layer is patterned to form first openings within the first scribe line areas. A second substrate comprising a plurality of second dies separated by second scribe line areas respectively is provided, wherein at least one second structural layer is overlying the substrate. The second structural layer is patterned to form second openings within the second scribe line areas. The first substrate and the second substrate are bonded to form a stack structure. The stack structure is cut along the first and second scribe line areas, passing the first and second openings. | 11-20-2008 |
20080286939 | Method for manufacturing SOI substrate - An object is to provide a method for manufacturing an SOI substrate, by which defective bonding can be prevented. An embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; an insulating layer is formed over the semiconductor substrate; the outer edge of the semiconductor substrate is selectively etched on the insulating layer side to a region at a greater depth than the embrittled layer; and the semiconductor substrate and a substrate having an insulating surface are superposed on each other and bonded to each other with the insulating layer interposed therebetween. The semiconductor substrate is heated to be separated at the embrittled layer while a semiconductor layer is left remaining over the substrate having an insulating surface. | 11-20-2008 |
20080286940 | PROCESS FOR PRODUCTION OF SOI SUBSTRATE AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE - A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands. | 11-20-2008 |
20080286941 | Method of manufacturing a semiconductor device - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 11-20-2008 |
20080286942 | Method of manufacturing a semiconductor device - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 11-20-2008 |
20080293217 | SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS - A method of fabricating composite substrates by associating a plurality of transfer layers in spaced relation upon a single intermediate support; providing a support layer on each transfer layer to form a composite substrate; and detaching the composite substrates from the intermediate support. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications. | 11-27-2008 |
20080299742 | Method for manufacturing SOI wafer - There is disclosed a method for manufacturing an SOI wafer comprising: a step of implanting at least one of a hydrogen ion and a rare gas ion into a donor wafer to form an ion implanted layer; a step of bonding an ion implanted surface of the donor wafer to a handle wafer; a step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer, thereby providing an SOI layer; and a step of etching the SOI layer to reduce a thickness of the SOI layer, wherein the etching step includes: a stage of performing rough etching as wet etching; a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and a stage of performing precise etching as dry etching based on the measured film thickness distribution of the SOI layer. There can be provided A method for manufacturing an SOI wafer having high film thickness uniformity of an SOI layer with excellent productivity. | 12-04-2008 |
20080299743 | Manufacturing method of semiconductor device - To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a second region including a non-single-crystal semiconductor layer are provided over a substrate. It is preferable that laser beam irradiation be performed to the separated (cleavage) single-crystal semiconductor layer in an inert atmosphere, and laser beam irradiation be performed to the non-single-crystal semiconductor layer in an air atmosphere at least once. | 12-04-2008 |
20080299744 | Manufacturing method of semiconductor substrate and semiconductor device - It is an object of the present invention to obtain a large-sized SOI substrate by providing a single-crystal silicon layer over a large-sized glass substrate in a large area. After a plurality of rectangular single-crystal semiconductor substrates each provided with a separation layer are aligned over a dummy substrate and both of the substrates are fixed with a low-temperature coagulant, the plurality of single-crystal semiconductor substrates are bonded to a support substrate; the temperature is raised up to a temperature, at which the low-temperature coagulant does not to have a bonding effect, so as to isolate the dummy substrate and the single-crystal semiconductor substrates; heat treatment is performed to separate part of the single-crystal semiconductor substrates, along a boundary of the respective separation layers; and single-crystal semiconductor layers are provided over the support substrate. | 12-04-2008 |
20080318394 | Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and electronic device - A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided. | 12-25-2008 |
20090004821 | MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An effect of metal contamination caused in manufacturing an SOI substrate can is suppressed. A damaged region is formed by irradiating a semiconductor substrate with hydrogen ions, and then, a base substrate and the semiconductor substrate are bonded to each other. Heat treatment is performed thereon to cleave the semiconductor substrate, so that an SOI substrate is manufactured. A gettering site layer is formed of a semiconductor containing a Group 18 element such as Ar, over a semiconductor layer of the SOI substrate. Heat treatment is performed thereon to perform gettering of a metal element in the semiconductor layer with the gettering site layer. By removing the gettering site layer by etching, thinning of the semiconductor layer can be performed. | 01-01-2009 |
20090004822 | Semiconductor substrate, manufacturing method of semiconductor substrate, and semiconductor device and electronic device using the same - A method of manufacturing a semiconductor substrate is demonstrated, which enables the formation of a single crystal semiconductor layer on a substrate having an insulating surface. The manufacturing method includes the steps of: ion irradiation of a surface of a single-crystal semiconductor substrate to form a damaged region; laser light irradiation of the single-crystal semiconductor substrate; formation of an insulating layer on the surface of the single-crystal semiconductor substrate; bonding the insulating layer with a substrate having an insulating surface; separation of the single-crystal semiconductor substrate at the damaged region, resulting in a thin single-crystal semiconductor layer on the surface of the substrate having the insulating surface; and laser light irradiation of the surface of the single-crystal semiconductor layer which is formed on the substrate having the insulating surface. This method allows the production of a thin layer of a single-crystal semiconductor with uniformed characteristics on an insulating surface. | 01-01-2009 |
20090004823 | Manufacturing method of semiconductor - A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first. | 01-01-2009 |
20090017598 | Method of manufacturing semiconductor device - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 01-15-2009 |
20090017599 | Method for manufacturing semiconductor device - An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled from a substrate. Over the substrate, the release layer and the element formation layer are formed. The support base material which can be peeled later is fixed to the upper surface of the element formation layer. The element formation layer is transformed through the support base material, and peeling is generated at an interface between the element formation layer and the release layer. Peeling is performed while the liquid is being supplied so that the element formation layer and the release layer which appear sequentially by peeling are wetted with the liquid such as pure water. Electric charge generated on the surfaces of the element formation layer and the release layer can be diffused by the liquid, and discharge by peeling electrification can be eliminated. | 01-15-2009 |
20090023269 | Method for producing soi wafer - Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized. | 01-22-2009 |
20090023270 | Method for manufacturing SOI wafer - There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing. | 01-22-2009 |
20090023271 | Glass-based SOI structures - A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate. | 01-22-2009 |
20090029525 | MANUFACTURING METHOD OF SOI SUBSTRATE - A manufacturing method of an SOI substrate with high throughput. A semiconductor layer separated from a semiconductor substrate is transferred to a supporting substrate, thereby manufacturing an SOI substrate. First, the semiconductor substrate serving as a base of the semiconductor layer is prepared. An embrittlement layer is formed in a region at a predetermined depth of the semiconductor substrate, and an insulating layer is formed on a surface of the semiconductor substrate. After bonding the semiconductor substrate and a supporting substrate with the insulating layer interposed therebetween, the semiconductor substrate is selectively irradiated with a laser beam; accordingly, embrittlement of the embrittlement layer progresses. Then, using a physical method or heat treatment, the semiconductor substrate is separated; at that time, the region where the embrittlement has progressed in the embrittlement layer serves as a starting point. | 01-29-2009 |
20090035920 | PROCESS FOR FABRICATING A SUBSTRATE OF THE SILICON-ON-INSULATOR TYPE WITH REDUCED ROUGHNESS AND UNIFORM THICKNESS - A process for fabricating a silicon on insulator (SOI) substrate by co-implanting atomic or ionic species into a semiconductor donor substrate to form a weakened zone therein, the weakened zone forming a boundary between a thin silicon active layer and the remainder of the donor substrate. The donor substrate is then bonded to a semiconductor receiver substrate by molecular adhesion, resulting in a layer of buried silicon interposed between the donor substrate and the receiver substrate. The remainder of the donor substrate is detached along the weakened zone to obtain a SOI substrate with the receiver substrate covered with the buried oxide layer and the thin silicon active layer. The silicon active layer is then thermally annealed for at least 10 minutes in a gaseous atmosphere containing hydrogen, argon or both at a temperature of at least 950° C. but not exceeding 1100° C. The annealing step minimizes roughness of the surface of the silicon active layer, prevents reduction in thickness of the buried oxide layer, and achieves uniform thickness of the thin silicon active layer and the buried oxide layer. | 02-05-2009 |
20090042362 | Manufacturing methods of SOI substrate and semiconductor device - A manufacturing method of an SOI substrate and a manufacturing method of a semiconductor device are provided. When a large-area single crystalline semiconductor film is formed over an enlarged substrate having an insulating surface, e.g., a glass substrate by an SOI technique, the large-area single crystalline semiconductor film is formed without any gap between plural single crystalline semiconductor films, even when plural silicon wafers are used. An aspect of the manufacturing method includes the steps of disposing a first seed substrate over a fixing substrate; tightly arranging a plurality of single crystalline semiconductor substrates over the first seed substrate to form a second seed substrate; forming a large-area continuous single crystalline semiconductor film by an ion implantation separation method and an epitaxial growth method; forming a large-area single crystalline semiconductor film without any gap over a large glass substrate by an ion implantation separation method again. | 02-12-2009 |
20090047771 | Manufacturing method and manufacturing apparatus of semiconductor device - To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}. | 02-19-2009 |
20090053875 | MANUFACTURING METHOD FOR SSOI SUBSTRATE - Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus. | 02-26-2009 |
20090053876 | Manufacturing method of semiconductor device and manufacturing apparatus of the same - Instead of forming a semiconductor film by bonding a bond substrate (semiconductor substrate) to a base substrate (supporting substrate) and then separating or cleaving the bond substrate, a bond substrate is separated or cleaved at a plurality of positions to form a plurality of first semiconductor films (mother islands), and then the plurality of first semiconductor films are bonded to a base substrate. Subsequently, the plurality of first semiconductor films each are partially etched, whereby one or more second semiconductor films (islands) are formed using one of the first semiconductor films and a semiconductor element is manufactured using the second semiconductor films. The plurality of first semiconductor films are bonded to the base substrate based on a layout of the second semiconductor films so as to cover at least a region in which the second semiconductor films of the semiconductor element are to be formed. | 02-26-2009 |
20090061593 | Semiconductor Wafer Re-Use in an Exfoliation Process Using Heat Treatment - Methods and apparatus for re-using a semiconductor donor wafer in a semiconductor-on-insulator (SOI) fabrication process provide for: (a) subjecting a first implantation surface of a donor semiconductor wafer to an ion implantation process to create a first exfoliation layer of the donor semiconductor wafer; (b) bonding the first implantation surface of the first exfoliation layer to a first insulator substrate; (c) separating the first exfoliation layer from the donor semiconductor wafer, thereby exposing a first cleaved surface of the donor semiconductor wafer, the first cleaved surface having a first damage thickness; and (d) subjecting the first cleaved surface of the donor semiconductor wafer to one or more elevated temperatures over time to reduce the first damage thickness to a sufficient level to produce a second implantation surface. | 03-05-2009 |
20090061594 | METHOD OF DETACHING A THIN FILM BY MELTING PRECIPITATES - A method of fabricating a thin film from a substrate includes implantation into the substrate, for example made of silicon, of ions of a non-gaseous species, for example gallium, the implantation conditions and this species being chosen, according to the material of the substrate, so as to allow the formation of precipitates confined in a certain depth, distributed within a layer, these precipitates being made of a solid phase having a melting point below that of the substrate. The method optionally further including intimate contacting of this face of the substrate with a stiffener, and detachment of a thin film by fracturing the substrate at the layer of precipitates by applying a mechanical and/or chemical detachment stress under conditions in which the precipitates are in the liquid phase. | 03-05-2009 |
20090075455 | Growing N-polar III-nitride Structures - Methods of forming a stable N-polar III-nitride structure are described. A Ga-polar device can be formed on a substrate. A carrier wafer is attached to the Ga-polar surface. The substrate is removed from the assembly. The N-polar surface that remains is offcut and, optionally, subsequent layers are formed on the offcut surface. | 03-19-2009 |
20090075456 | Method for manufacturing SOI substrate and method for manufacturing semiconductor device - A highly reliable semiconductor device capable of high speed operation is manufactured over a flexible substrate at a high yield. A separation layer is formed over an insulating substrate by a sputtering method; the separation layer is flattened by a reverse sputtering method; an insulating film is formed over the flattened separation layer; a damaged area is formed by introducing hydrogen or the like into a semiconductor substrate; an insulating film is formed over the semiconductor substrate in which the damaged area is formed; the insulating film formed over the insulating substrate is bonded to the insulating film formed over the semiconductor substrate, the semiconductor substrate is separated at the damaged area so that a semiconductor layer is formed over the insulating substrate; the semiconductor layer is flattened so as to form an SOI substrate; and the semiconductor device is formed over the SOI substrate. | 03-19-2009 |
20090081849 | METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER - To provide a method for manufacturing an SOI substrate having a single crystal semiconductor layer having a small and uniform thickness over an insulating film. Further, time of adding hydrogen ions is reduced and time of manufacture per SOI substrate is reduced. A bond layer is formed over a surface of a first semiconductor wafer and a separation layer is formed below the bond layer by irradiating the first semiconductor wafer with H | 03-26-2009 |
20090081850 | METHOD FOR MANUFACTURING SOI SUBSTRATE - The method includes steps of adding first ions to a predetermined depth from a main surface of a semiconductor substrate by irradiation of the semiconductor substrate with a planar, linear, or rectangular ion beam, so that a separation layer is formed; adding second ions to part of the separation layer formed in the semiconductor substrate; disposing the main surface of the semiconductor substrate and a main surface of a base substrate to face each other in order to bond a surface of an insulating film and the base substrate; and cleaving the semiconductor substrate using the separation layer as a cleavage plane, so that a single crystal semiconductor layer is formed over the base substrate. The mass number of the second ions is the same as or larger than that of the first ions. | 03-26-2009 |
20090093102 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - When a single crystal semiconductor layer is bonded to a base substrate, a silicon oxide film is preferably used for one or both of the base substrate and a single crystal semiconductor substrate. According to this structure, an SOI layer having a strong bonding strength in a bonding portion can be obtained even when a substrate having an upper temperature limit of 700° C. or lower such as a glass substrate is used. In addition, a single crystal semiconductor substrate from which the single crystal semiconductor layer has been separated is reprocessed in such a manner that the single crystal semiconductor substrate is irradiated with laser light from the separation surface side of the single crystal semiconductor substrate, to melt the surface of the single crystal semiconductor substrate during the melting time per area of 0.5 microseconds to 1 millisecond. Then, the reprocessed single crystal semiconductor substrate is reused. | 04-09-2009 |
20090093103 | Method and device for controlled cleaving process - A technique for forming a film of material ( | 04-09-2009 |
20090098708 | METHOD FOR PRODUCING A THIN CHIP COMPRISING AN INTEGRATED CIRCUIT - In a method for producing a very thin chip including an integrated circuit, a circuit structure is produced in a defined section of a semiconductor wafer. The defined wafer section is subsequently released from the semiconductor wafer. For this purpose, the wafer section is firstly freed such that it is held only via local web-like connections on the remaining semiconductor wafer, which web-like connections are arranged at a lateral periphery of the wafer section. The web-like connections are subsequently severed. | 04-16-2009 |
20090098709 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to thereby form a fragile layer in the bonding substrate. Then, a region of the bonding substrate that is on and near the surface thereof, i.e., a region ranging from a shallower position than the fragile layer to the surface is removed by etching, polishing, or the like. Next, after attaching the bonding substrate to a base substrate, the bonding substrate is separated at the fragile layer to thereby form a semiconductor film over the base substrate. After forming the semiconductor film over the base substrate, a semiconductor element is formed using the semiconductor film. | 04-16-2009 |
20090098710 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An SOI substrate having a single crystal semiconductor layer with high surface planarity is manufactured. A semiconductor substrate is doped with hydrogen, whereby a damaged region which contains large quantity of hydrogen is formed. After a single crystal semiconductor substrate and a supporting substrate are bonded together, the semiconductor substrate is heated, whereby the single crystal semiconductor substrate is separated in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation plane of the single crystal semiconductor layer separated from the single crystal semiconductor substrate, laser beam irradiation is performed. By irradiation with a laser beam, the single crystal semiconductor layer is melted, whereby planarity of the surface of the single crystal semiconductor layer is improved and re-single-crystallization is performed. | 04-16-2009 |
20090111242 | Method for producing semiconductor substrate - An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate | 04-30-2009 |
20090111243 | SOI SUBSTRATES WITH A FINE BURIED INSULATING LAYER - A method of producing a semiconductor structure having a buried insulating layer having a thickness between 2 and 25 nm, by: forming at least one insulating layer on a surface of a first or second substrate, or both, wherein the surfaces are free from an insulator or presenting a native oxide layer resulting from exposure of the substrates to ambient conditions; assembling the first and second substrates; and thinning down the first substrate, in order to obtain the semiconductor structure. In this method, the insulating layer forming stage is a plasma activation based on an oxidizing or nitriding gas. | 04-30-2009 |
20090111244 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer. | 04-30-2009 |
20090117706 | Manufacturing Method of SOI Wafer and SOI Wafer Manufactured by This Method - There is provided a method of manufacturing an SOI wafer by an ion implantation delamination method, comprising at least: forming an oxide film on a surface of at least one of a base wafer and a bond wafer functioning as an SOI layer; implanting at least one of a hydrogen ion and a rare gas ion from a surface of the bond wafer to form an ion implanted layer; subsequently bringing the bond wafer into close contact with the base wafer via the oxide film; performing a heat treatment to cause delamination in the ion implanted layer so that the SOI layer is formed; then conducing a heat treatment in an oxidizing atmosphere to form an oxide film on the surface of the SOI layer; subsequently removing the oxide film by etching; then cleaning the surface of the SOI layer by using ozone water; and polishing the same. As a result, in an ion implantation delamination method, a method of manufacturing a high-quality SOI wafer which can remove a damaged layer and surface roughness remaining on the SOI layer surface after delamination while maintaining film thickness uniformity of the SOI layer is provided. | 05-07-2009 |
20090117707 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing an SOI substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate having a low heat resistant temperature, such as a glass substrate or the like, is used. Another object is to manufacture a highly reliable semiconductor device using such an SOI substrate. An SOI substrate having a single crystal semiconductor layer which is transferred from a single crystal semiconductor substrate to a supporting substrate, and an entire region of which is melted by laser light irradiation to cause re-single-crystallization is used. Accordingly, the single crystal semiconductor layer has reduced crystal defects, high crystallinity and high planarity. | 05-07-2009 |
20090142904 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed. | 06-04-2009 |
20090142905 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Adhesion defects between a single crystal semiconductor layer and a support substrate are reduced to manufacture an SOI substrate achiving high bonding strength between the single crystal semiconductor layer and the support substrate. Plasma is produced by exciting a source gas, ion species contained in the plasma are added from one surface of a single crystal semiconductor substrate, and thereby forming a damage region in the single crystal semiconductor substrate; forming an insulating layer over one surface of the single crystal semiconductor substrate; a support substrate is bonded so as to face the single crystal semiconductor substrate with the insulating layer therebetween; the single crystal semiconductor substrate is heated to separate the single crystal semiconductor substrate into a single crystal semiconductor layer bonded to the support substrate and a single crystal semiconductor substrate, in the damage region; and the single crystal semiconductor layer bonded to the support substrate is pressed. | 06-04-2009 |
20090149001 | PRODUCING SOI STRUCTURE USING HIGH-PURITY ION SHOWER - Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film. | 06-11-2009 |
20090170285 | Method for manufacturing bonded wafer - The present invention provides a method for manufacturing a bonded wafer by an ion implantation delamination method, the method including at least the steps of bonding a base wafer with a bond wafer having a microbubble layer formed by ion implantation, delaminating the wafers along the micro bubble layer as a boundary, and removing a periphery of a thin film formed on the base wafer by the delamination step, wherein at least the thin-film periphery removal step after the delamination step is performed by dry etching that supplies an etching gas from a nozzle, and the dry etching is performed by adjusting an inner diameter of the gas-jetting port of the nozzle, and a distance between the gas-jetting port of the nozzle and a surface of the thin film. As a result of this, there is provided the method for manufacturing the bonded wafer, in which removal of the thin-film periphery can be easily performed and a removal width is also reproducibly obtained well in the thin-film periphery removal step, and degradation in quality of the thin film can be effectively prevented. | 07-02-2009 |
20090170286 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate. | 07-02-2009 |
20090170287 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor substrate and a base substrate are prepared; a first insulating film is formed over the single crystal semiconductor substrate; a separation layer is formed by introducing ions at a predetermined depth through a surface of the single crystal semiconductor substrate; plasma treatment is performed on the base substrate so as to planarize a surface of the base substrate; a second insulating film is formed over the planarized base substrate; a surface of the first insulating film is bonded to a surface of the second insulating film by making the surface of the single crystal semiconductor substrate and the surface of the base substrate face each other; and a single crystal semiconductor film is provided over the base substrate with the second insulating film and the first insulating film interposed therebetween by performing separation at the separation layer. | 07-02-2009 |
20090176348 | REMOVABLE LAYER MANUFACTURING METHOD | 07-09-2009 |
20090181519 | LAMINATION DEVICE MANUFACTURING METHOD - A lamination device manufacturing method for manufacturing a lamination device using a reinforced wafer formed with an annular reinforced portion, includes a wafer lamination step in which a rear surface of the reinforced wafer corresponding to the device area is faced to and joined to the front surface of an underlying wafer with corresponding streets aligned with each other, thus forming a lamination wafer; an electrode connection step in which a via-hole is formed at a position where an electrode is formed in each of the devices of the reinforced wafer constituting part of the lamination wafer, so as to reach a corresponding electrode formed in each of the devices of the underlying wafer, and the via-hole is filled with a conductive material to connect the electrodes; and a division step in which after the electrode connection step is executed, the lamination wafer is cut along the streets and divided into individual lamination devices. | 07-16-2009 |
20090197391 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A method for manufacturing an SOI substrate is provided in which adhesiveness between a single crystal semiconductor substrate and a semiconductor substrate is improved; bonding defects are reduced; and sufficient bonding strength is provided in a bonding step and also in a process of manufacturing a semiconductor device. An insulating film including halogen is formed on a single crystal semiconductor substrate side in which an embrittlement layer is formed. The insulating film including halogen undergoes a plasma treatment. The insulating film including halogen and a face of a semiconductor substrate are bonded so as to face each other. A thermal treatment is performed to split the single crystal semiconductor substrate along the embrittlement layer, thereby separating the single crystal semiconductor substrate into a single crystal semiconductor substrate and the semiconductor substrate to which a single crystal semiconductor layer is bonded. The single crystal semiconductor layer bonded to the semiconductor substrate undergoes a planarization treatment. | 08-06-2009 |
20090197392 | MANUFACTURING METHOD OF SOI SUBSTRATE - An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate. | 08-06-2009 |
20090203191 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an embrittled region at a predetermined depth from a surface of the semiconductor substrate; plasma treatment of the oxide film is performed by applying a bias voltage; a surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other to bond a surface of the oxide film and the surface of the base substrate to each other; and heat treatment is performed to cause separation along the embrittled region after bonding the surface of the oxide film and the surface of the base substrate to each other, thereby forming a semiconductor film over the base substrate with the oxide film interposed therebetween. | 08-13-2009 |
20090209084 | CLEAVE INITIATION USING VARYING ION IMPLANT DOSE - An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material | 08-20-2009 |
20090209085 | METHOD FOR REUSING DELAMINATED WAFER - The present invention provides a method for reusing a delaminated wafer, which is a method for applying reprocessing that is at least polishing to a delaminated wafer | 08-20-2009 |
20090209086 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Highly reliable single crystal semiconductor layers and semiconductor devices can be obtained through a fewer manufacturing steps. A method for manufacturing a semiconductor device is proposed. A single crystal semiconductor substrate provided with an insulating film is irradiated with an ion beam to form a damaged region in the single crystal semiconductor substrate; liquid glass is floated over a liquid denser than the liquid glass to shape the liquid glass into a plate; the single crystal semiconductor substrate provided with the damaged region is placed over the plate-like liquid glass so that the insulating film and the liquid glass face each other; the plate-like liquid glass and the single crystal semiconductor substrate are cooled slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together; and a single crystal semiconductor layer is separated from the single crystal semiconductor substrate along the damaged region. | 08-20-2009 |
20090233417 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The manufacturing method includes attaching a single crystal semiconductor layer to a supporting substrate, detecting a position of a deficiency region in the single crystal semiconductor layer, forming a non-single-crystal semiconductor layer over the single crystal semiconductor layer, selectively improving crystallinity of a portion of the non-single-crystal semiconductor layer based on the position of the deficiency region, the portion being overlapped with the deficiency region, and planarizing the non-single-crystal semiconductor layer over the supporting substrate. | 09-17-2009 |
20090239354 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 09-24-2009 |
20090246935 | Method for producing soi substrate - Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser. | 10-01-2009 |
20090246936 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even if a single crystal semiconductor substrate including crystal defects is used. A first oxide film is formed on a single crystal semiconductor substrate; the first oxide film is removed; a surface of the single crystal semiconductor substrate from which the first oxide film is removed is irradiated with laser light; a second oxide film is formed on the single crystal semiconductor substrate; an embrittled region is formed in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the second oxide film; bonding the second oxide film and the semiconductor substrate so as to face each other; and the single crystal semiconductor substrate is separated at the embrittled region by heat treatment to obtain a single crystal semiconductor layer bonded to the semiconductor substrate. | 10-01-2009 |
20090246937 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a method for manufacturing an SOI substrate in which crystal defects of a single crystal semiconductor layer are reduced even when a single crystal semiconductor substrate in which crystal defects exist is used. Such an SOI substrate can be manufactured through the steps of forming a single crystal semiconductor layer which has an extremely small number of defects over a single crystal semiconductor substrate by an epitaxial growth method; forming an oxide film on the single crystal semiconductor substrate by thermal oxidation treatment; introducing ions into the single crystal semiconductor substrate through the oxide film; bonding the single crystal semiconductor substrate into which the ions are introduced and a semiconductor substrate to each other; causing separation by heat treatment; and performing planarization treatment on the single crystal semiconductor layer provided over the semiconductor substrate. | 10-01-2009 |
20090258474 | Method for producing SOl substrate - Provided is a method for producing an SOI substrate having a thick-film SOI layer, in which an ion-implanted layer is formed by implanting at least one kind of ion of hydrogen ion and a rare gas ion into a surface of a bond wafer, an SOI substrate having an SOI layer is produced by, after the ion-implanted surface of the bond wafer and a surface of a base wafer are bonded together via an oxide film, delaminating the bond wafer along the ion-implanted layer, heat treatment is performed on the SOI substrate having the SOI layer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, and, after the surface of the SOI layer is polished by CMP, a silicon epitaxial layer is grown on the SOI layer of the SOI substrate. | 10-15-2009 |
20090269906 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided by a method suitable for mass production. Further, a semiconductor substrate having an excellent characteristic with effective use of resources is provided. A single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate; an insulating layer is formed over the single crystal semiconductor substrate; the insulating layer and a supporting substrate are bonded to each other; a first single crystal semiconductor layer is formed over the supporting substrate by partially separating the single crystal semiconductor substrate at the damaged region; a first semiconductor layer is formed over the first single crystal semiconductor layer; a second semiconductor layer is formed over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; a second single crystal semiconductor layer is formed by improving crystallinity of the first and the second semiconductor layers. | 10-29-2009 |
20090269907 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness. | 10-29-2009 |
20090280620 | Method for Producing Soi Wafer - The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×10 | 11-12-2009 |
20090280621 | Method Of Producing Bonded Wafer - In a method of producing a bonded wafer, a volume fraction of SiO | 11-12-2009 |
20090298259 | Method for transferring one-dimensional micro/nanostructure - As the conventional nanowire technology has many restrictions, the present invention discloses a method for transferring a one-dimensional micro/nanostructure to diversify the fabrication and application of nanocomponents, wherein a micro/nanostructure having formed on one substrate can be arbitrarily transferred to another substrate, whereby a micro/nanostructure can be integrated with different substrates. | 12-03-2009 |
20090298260 | BACK-ILLUMINATED IMAGER USING ULTRA-THIN SILICON ON INSULATOR SUBSTRATES - A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer. At the completion of the growing of the epitaxial layer, there exists a net dopant concentration in the seed layer and the epitaxial layer which has maximum value at or near an interface between the seed layer and the insulator layer. | 12-03-2009 |
20090298261 | Method For Producing Bonded Wafer - A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions. | 12-03-2009 |
20090305483 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - One surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate. An insulating layer is formed over the one surface of the single crystal semiconductor substrate. A surface of a substrate having an insulating surface and a surface of the insulating layer are disposed in contact with each other to bond the substrate having the insulating surface and the single crystal semiconductor substrate to each other. Heat treatment is performed to divide the single crystal semiconductor substrate along the damaged region and to form a semiconductor layer over the substrate having the insulating surface. One surface of the semiconductor layer is irradiated with light from a flash lamp under conditions where the semiconductor layer is not melted, to repair a defect. | 12-10-2009 |
20090311847 | Method for producing a semiconductor component - Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively. | 12-17-2009 |
20090325363 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied. | 12-31-2009 |
20090325364 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To provide a technical means which is capable of increasing crystallinity and planarity of a single crystal semiconductor layer, crystal defects are reduced in such a manner that a single crystal semiconductor substrate, in which an insulating film is formed on its surface and an embrittlement region is formed in a region at a predetermined depth from the surface, and a supporting substrate are attached to each other with the insulating film interposed therebetween; the single crystal semiconductor substrate is separated in the embrittlement region by a heat treatment; a single crystal semiconductor layer is irradiated with laser light over the supporting substrate with the insulating film interposed therebetween; a surface of the single crystal semiconductor layer is etched; and a plasma treatment is performed on the surface of the single crystal semiconductor layer. | 12-31-2009 |
20100009515 | LASER LIFT-OFF METHOD - The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced. | 01-14-2010 |
20100009516 | METHOD FOR GROWTH OF GaN SINGLE CRYSTAL, METHOD FOR PREPARATION OF GaN SUBSTRATE, PROCESS FOR PRODUCING GaN-BASED ELEMENT, AND GaN-BASED ELEMENT - A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer ( | 01-14-2010 |
20100015779 | METHOD FOR PRODUCING BONDED WAFER - There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. | 01-21-2010 |
20100015780 | TRANSFER METHOD WITH A TREATMENT OF A SURFACE TO BE BONDED - A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer. | 01-21-2010 |
20100022070 | METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object to provide a method for, after a semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an SOI substrate. The method for, after a semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an SOI substrate includes the steps of forming an insulating film over a bond substrate; adding ions from a surface of the bond substrate to form an embrittlement layer; bonding the bond substrate to a glass substrate with the insulating film interposed therebetween; separating, at the embrittlement layer, the bond substrate into a semiconductor film which is bonded to the glass substrate with the insulating film interposed therebetween and a separated bond substrate; performing first wet etching using a solution containing hydrofluoric acid as an etchant on the separated bond substrate; performing second wet etching using an organic alkaline aqueous solution as an etchant on the separated bond substrate; performing thermal oxidation treatment on the separated bond substrate in an oxidizing atmosphere to which a gas containing halogen is added to form an oxide film on a surface of the separated bond substrate; performing third wet etching using a solution containing hydrofluoric acid as an etchant on the oxide film; and forming a reprocessed bond substrate by performing polishing on the separated bond substrate. | 01-28-2010 |
20100029058 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere. | 02-04-2010 |
20100035407 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin. | 02-11-2010 |
20100047996 | LOCALIZED ANNEALING DURING SEMICONDUCTOR DEVICE FABRICATION - A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer. | 02-25-2010 |
20100047997 | METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween. | 02-25-2010 |
20100047998 | MANUFACTURING METHOD OF SUBSTRATE PROVIDED WITH SEMICONDUCTOR FILMS - A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. The plurality of single crystal substrates with the damaged regions formed therein and the bonding layers formed thereover are arranged on a tray. Depression portions for holding the single crystal semiconductor substrates are formed in the tray. With the single crystal semiconductor substrates arranged on the tray, the plurality of single crystal semiconductor substrates with the damaged regions formed therein and the bonding layers formed thereover are bonded to a base substrate. By performing heat treatment and dividing the single crystal semiconductor substrates along the damaged regions, the plurality of single crystal semiconductor layers that are sliced are formed over the base substrate. | 02-25-2010 |
20100055872 | METHOD FOR MANUFACTURING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE - An object is that a region separated from a semiconductor substrate when a supporting substrate is larger than the semiconductor substrate does not easily move. A method for manufacturing a semiconductor layer includes the steps of: irradiating a plurality of semiconductor substrates with ions to form embrittlement layers in the plurality of semiconductor substrates; forming bonding layers on respective surfaces of the plurality of semiconductor substrates; placing, over a supporting substrate, the surfaces of the plurality of semiconductor substrates on which the bonding layers are formed; placing a cover including depressed portions which house the plurality of semiconductor substrates over the plurality of semiconductor substrates; and heating the plurality of semiconductor substrates housed in the depressed portions of the cover, and thereby collecting semiconductor layers fixed to the supporting substrate, and regions separated from the plurality of semiconductor substrates along with the embrittlement layers. | 03-04-2010 |
20100055873 | LED-LASER LIFT-OFF METHOD - The present invention discloses an LED-laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced. | 03-04-2010 |
20100062583 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device in which, even when the semiconductor device is formed over an SOI substrate which uses a glass substrate, an insulating film and a semiconductor film over the glass substrate are not peeled by stress applied by a conductive film in formation of the conductive film for forming a gate electrode. A semiconductor device is manufactured by the steps of forming a first insulating film over a bond substrate, forming an embrittlement layer by adding ions from a surface of the bond substrate, bonding the bond substrate to a glass substrate with the first insulating film interposed therebetween, separating the bond substrate along the embrittlement layer to form a semiconductor film over the glass substrate with the first insulating film interposed therebetween, removing a peripheral region of the first insulating film and the semiconductor film to expose part of the glass substrate, forming a gate insulating film over and in contact with the semiconductor film and the glass substrate, and forming a stacked conductive film over and in contact with the gate insulating film, in which the stacked conductive film includes a conductive film having a tensile stress and a conductive film having a compressive stress. | 03-11-2010 |
20100068867 | METHOD FOR PRODUCING BONDED SILICON WAFER - A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO | 03-18-2010 |
20100068868 | Wafer temporary bonding method using silicon direct bonding - A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented. | 03-18-2010 |
20100075481 | METHOD AND STRUCTURE OF MONOLITHICALLY INTEGRATED IC-MEMS OSCILLATOR USING IC FOUNDRY-COMPATIBLE PROCESSES - The present invention relates to integrating an inertial mechanical device on top of an IC substrate monolithically using IC-foundry compatible processes. The IC substrate is completed first using standard IC processes. A thick silicon layer is added on top of the IC substrate. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Compared with the incumbent bulk or surface micromachined MEMS inertial sensors, vertically monolithically integrated inertial sensors provided by embodiments of the present invention have one or more of the following advantages: smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost. | 03-25-2010 |
20100081251 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light. | 04-01-2010 |
20100081252 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Suppression of generation of a stripe pattern (unevenness) when an SOI substrate is manufactured by a glass substrate and a single crystal semiconductor substrate bonded to each other. A single crystal semiconductor substrate is irradiated with ions so that a fragile region is formed in the single crystal semiconductor substrate; a depression or a projection is formed in a region of a surface of an insulating layer provided on the single crystal semiconductor substrate, the region corresponding to the periphery of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate; thermal treatment is performed thereon to separate the single crystal semiconductor substrate at the fragile region, so that a single crystal semiconductor layer is formed over the base substrate; and the single crystal semiconductor layer in the region corresponding to the periphery is removed. | 04-01-2010 |
20100081253 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A step of forming an insulating film over a semiconductor substrate and forming an embrittled region in the semiconductor substrate by irradiating the semiconductor substrate with accelerated ions through the insulating film; a step of disposing a surface of the semiconductor substrate and a surface of a base substrate opposite to each other and bonding the surface of the insulating film to the surface of the base substrate; a step of forming a semiconductor layer over the base substrate with the insulating film interposed therebetween by causing separation along the embrittled region by performing heat treatment after the surface of the insulating film and the surface of the base substrate are bonded to each other; a step of performing etching treatment on the semiconductor layer; a step of irradiating the semiconductor layer subjected to the etching treatment with a laser beam; and a step of irradiating the semiconductor layer irradiated with the laser beam with plasma. | 04-01-2010 |
20100081254 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR LAYER - An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured. | 04-01-2010 |
20100087044 | METHOD FOR MANUFACTURING SOI SUBSTRATE - The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. | 04-08-2010 |
20100087045 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An SOI substrate is manufactured by forming an embrittled layer in a bond substrate by increasing the dose of hydrogen ions in the formation of the embrittled layer to a value more than the dose of hydrogen ions of the lower limit for separation of the bond substrate, separating the bond substrate attached to the base substrate, forming an SOI substrate in which a single crystal semiconductor film is formed over the base substrate, and irradiating a surface of the single crystal semiconductor film with laser light. | 04-08-2010 |
20100087046 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object is to provide a method for manufacturing an SOI substrate, by which defective bonding can be prevented. An embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; an insulating layer is formed over the semiconductor substrate; the outer edge of the semiconductor substrate is selectively etched on the insulating layer side to a region at a greater depth than the embrittled layer; and the semiconductor substrate and a substrate having an insulating surface are superposed on each other and bonded to each other with the insulating layer interposed therebetween. The semiconductor substrate is heated to be separated at the embrittled layer while a semiconductor layer is left remaining over the substrate having an insulating surface. | 04-08-2010 |
20100093153 | MANUFACTURING METHOD OF SOI SUBSTRATE - To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one. | 04-15-2010 |
20100099237 | FLEXIBLE DISPLAY SUBSTRATES - Processes for transferring a semiconductor material to a polymer substrate to provide flexible semiconductor material include implanting ions to a predetermined depth in a semiconductor substrate, heat-treating the ion-implanted semiconductor substrate for a period of time and at a temperature effective to cause defect formation and enlargement of the implanted ion defect, adhering the ion-implanted, heat-treated substrate to a polymer substrate, and separating a semiconductor film such as a single crystal silicon film from the semiconductor substrate; and devices having single crystal silicon films disposed directly or indirectly on polymer films. | 04-22-2010 |
20100112780 | Microwave-Induced Ion Cleaving and Patternless Transfer of Semiconductor Films - A method of ion cleaving using microwave radiation is described. The method includes using microwave radiation to induce exfoliation of a semiconductor layer from a donor substrate. The donor substrate may be implanted, bonded to a carrier substrate, and heated via the microwave radiation. The implanted portion of the donor substrate may include increased damage and/or dipoles (relative to non-implanted portions of the donor substrate), which more readily absorb microwave radiation. Consequently, by using microwave radiation, an exfoliation time may be reduced to 12 seconds or less. In addition, a presented method also includes the use of focused ion beam implantation to achieve a pattern-less transfer of a semiconductor layer onto a carrier substrate. | 05-06-2010 |
20100112781 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p | 05-06-2010 |
20100112782 | METHOD FOR REDUCING THE THICKNESS OF SUBSTRATES - The current invention presents a method for thinning wafers. The method uses a two-step process, whereby first the carrier wafer ( | 05-06-2010 |
20100112783 | ADHESIVE FILM FOR SEMICONDUCTOR, COMPOSITE SHEET, AND METHOD FOR PRODUCING SEMICONDUCTOR CHIP USING THEM - There is provided an adhesive film for a semiconductor, which can be attached to a semiconductor wafer at low temperature and which allows semiconductor chips to be obtained at high yield from the semiconductor wafer while sufficiently inhibiting generation of chip cracks and burrs. The adhesive film for a semiconductor comprises a polyimide resin that can be obtained by reaction between a tetracarboxylic dianhydride containing 4,4′-oxydiphthalic dianhydride represented by chemical formula (I) below and a diamine containing a siloxanediamine represented by the following general formula (II) below, and that can be attached to a semiconductor wafer at 100° C. or below. | 05-06-2010 |
20100112784 | LARGE AREA SEMICONDUCTOR ON GLASS INSULATOR - Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers. | 05-06-2010 |
20100120223 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided. | 05-13-2010 |
20100120224 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing an SOI substrate including a single crystal silicon film whose plane orientation is (100) and a single crystal silicon film whose plane orientation is (110) with high yield. A first single crystal silicon substrate whose plane orientation is (100) is doped with first ions to form a first embrittlement layer. A second single crystal silicon substrate whose plane orientation is (110) is doped with second ions to selectively form a second embrittlement layer. Only part of the first single crystal silicon substrate is separated along the first embrittlement layer by first heat treatment, thereby forming a first single crystal silicon film. A region of the second single crystal silicon substrate, in which the second embrittlement layer is not formed, is removed. Part of the second single crystal silicon substrate is separated along the second embrittlement layer by second heat treatment, thereby forming a second single crystal silicon film. | 05-13-2010 |
20100120225 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which an increase in the number of steps can be suppressed. A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween. | 05-13-2010 |
20100120226 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified. | 05-13-2010 |
20100136765 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When printing is performed on a base substrate with a laser after a single crystal silicon layer is transferred to the base substrate, there are problems such as ablation of the single crystal silicon layer in the peripheral portion of a printed dot or attachment of glass chips or the like to the surface of the single crystal silicon layer. After printing is performed on the bonding surface of a silicon wafer with a laser, the surface of the silicon wafer is polished by CMP (chemical mechanical polishing), so that the projection in the peripheral portion of the printed dot is removed. After that, the silicon wafer is bonded to the base substrate. Since the depression of the printed dot remains to some extent by a chemical etching effect even after the polishing by CMP, the single crystal silicon layer is not transferred only at the depression portion at the time of the transfer; accordingly, the information is left on the base substrate. | 06-03-2010 |
20100167499 | METHOD FOR MAKING A STRESSED STRUCTURE DESIGNED TO BE DISSOCIATED - A method of making a complex microelectronic structure by assembling two substrates through two respective linking surfaces, the structure being designed to be dissociated at a separation zone. Prior to assembly, in producing a state difference in the tangential stresses between the two surfaces to be assembled, the state difference is selected so as to produce in the assembled structure a predetermined stress state at the time of dissociation. | 07-01-2010 |
20100167500 | METHOD OF RECYCLING AN EPITAXIED DONOR WAFER - A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer. | 07-01-2010 |
20100173472 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing an SOI substrate and a method for manufacturing a semiconductor device, in each of which peeling of a single crystal semiconductor layer from an end portion due to laser irradiation is suppressed, are provided. A fragile region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an accelerated ion, the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween, a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by splitting the single crystal semiconductor substrate at the fragile region, an end portion of the single crystal semiconductor layer is removed, and a surface of the single crystal semiconductor layer whose end portion has been removed is irradiated with a laser beam. | 07-08-2010 |
20100173473 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 07-08-2010 |
20100178749 | METHOD OF FABRICATING EPITAXIALLY GROWN LAYERS ON A COMPOSITE STRUCTURE - A method of fabricating materials by epitaxy by epitaxially growing at least one layer of a material upon a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substrate and the thin film. The thin film and the support substrate have a mean thermal expansion coefficient of 7×10 | 07-15-2010 |
20100184269 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - To provide a method for manufacturing a semiconductor substrate provided with a single crystal semiconductor layer which can be used practically even when a substrate with a low upper temperature limit, such as a glass substrate, is used. An oxide film is formed on a single crystal semiconductor substrate; accelerated ions are introduced into the single crystal semiconductor substrate through the oxide film to form an embrittled region in the single crystal semiconductor substrate; a supporting substrate is bonded such that the supporting substrate and the single crystal semiconductor substrate face each other with the oxide film interposed therebetween; separation is performed at the embrittled region into the supporting substrate to which a single crystal semiconductor layer is bonded and part of the single crystal semiconductor substrate by heating of the single crystal semiconductor substrate; first etching is performed on a surface of the single crystal semiconductor layer bonded to the supporting substrate with a substrate bias applied; the single crystal semiconductor layer is irradiated with a laser beam and at least part of the surface of the single crystal semiconductor layer is melted and solidified; and second etching is performed on the surface of the single crystal semiconductor layer with no substrate bias applied. | 07-22-2010 |
20100184270 | Method for Producing Bonded Wafer - A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions. | 07-22-2010 |
20100190318 | METHOD OF RECOVERING AND REPRODUCING SUBSTRATES AND METHOD OF PRODUCING SEMICONDUCTOR WAFERS - A method of recovering a first substrate, including the steps of: sticking a second substrate on a semiconductor layer epitaxially grown on the first substrate; and separating the semiconductor layer and the first substrate. Furthermore, a method of reproducing a first substrate, including the step of surface processing the first substrate separated. Furthermore, a method of reproducing a first substrate, including the step of homoepitaxially growing the first substrate surface processed. Furthermore, a method of producing a semiconductor wafer, including the step of epitaxially growing a semiconductor layer on a first substrate. Thus a group III nitride or similar, expensive substrate can be used to efficiently and economically, epitaxially grow a group III nitride or similar semiconductor layer. | 07-29-2010 |
20100197113 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a thin semiconductor device having flexibility. A groove is formed in one surface of a substrate; an element layer including an element is formed, the element being disposed within the groove; the substrate is thinned from the other surface of the substrate until one surface of the element layer is exposed, to form a layer which is to be transposed, having the element; and the layer to be transposed is transposed onto the film. | 08-05-2010 |
20100203706 | METHOD OF MANUFACTURING AN SOI SUBSTRATE AND METHOD OF MANUFACUTIRNG A SEMICONDUCTOR DEVICE - It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment. | 08-12-2010 |
20100210089 | SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost. | 08-19-2010 |
20100210090 | FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE - A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure. | 08-19-2010 |
20100216294 | METHOD OF FABRICATING A MICROELECTRONIC STRUCTURE INVOLVING MOLECULAR BONDING - Method of fabricating a microelectronic structure includes preparing a first structure having a first material different from silicon on a surface thereof and forming at least one covering layer of a second material by IBS (ion beam sputtering) and having a thickness of less than one micron, where the at least one cover layer has a free surface and molecular bonding the free surface to one face of a second structure where the at least one covering layer constitutes a bonding layer for the first and second structures. | 08-26-2010 |
20100221891 | METHOD OF PRODUCING A HYBRID SUBSTRATE BY PARTIAL RECRYSTALLIZATION OF A MIXED LAYER - A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated. | 09-02-2010 |
20100227452 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface. | 09-09-2010 |
20100248444 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A single crystal semiconductor separated from a single crystal semiconductor substrate is formed partly over a supporting substrate with a buffer layer provided therebetween. The single crystal semiconductor is separated from the single crystal semiconductor substrate by irradiation with accelerated ions, formation of a fragile layer by the ion irradiation, and heat treatment. A non-single crystal semiconductor layer is formed over the single crystal semiconductor and irradiated with a laser beam to be crystallized, whereby an SOI substrate is manufactured. | 09-30-2010 |
20100248445 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - It is an object to provide a novel manufacturing method of a semiconductor substrate containing silicon carbide. The method for manufacturing a semiconductor device includes the steps of performing carbonization treatment on a surface of a silicon substrate to form a silicon carbide layer; adding ions to the silicon substrate to form an embrittlement region in the silicon substrate; bonding the silicon substrate and a base substrate with insulating layers interposed between the silicon substrate and the base substrate; heating the silicon substrate and separating the silicon substrate at the embrittlement region to form a stacked layer of the silicon carbide layer and a silicon layer over the base substrate with the insulating layers interposed between the base substrate and the stacked layer; and removing the silicon layer to expose a surface of the silicon carbide layer. | 09-30-2010 |
20100267216 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 10-21-2010 |
20100273310 | METHOD OF MANUFACTURING SOI SUBSTRATE - The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step. | 10-28-2010 |
20100279487 | METHOD FOR TRANSFERRING A LAYER FROM A DONOR SUBSTRATE ONTO A HANDLE SUBSTRATE - The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs. | 11-04-2010 |
20100279488 | Method for Preparing SOI Substrate Having Backside Sandblasted - Provided is a method of preparing an SOI substrate having a backside roughened which the SOI substrate has a reduced number of defects in a silicon layer at the front surface in spite of sandblasting having been applied to the backside of the SOI substrate. Specifically provided is the method comprising the steps of: etching 10 nm or more of a surface of a silicon film of an SOI substrate; sandblasting a backside of the SOI substrate with protective tape attached to the etched surface of the silicon film, the back side being the other side of the SOI substrate from the etched surface; removing the protective tape after the sandblasting; and polishing and cleaning a silicon film surface from which the protective tape has been removed. | 11-04-2010 |
20100291752 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A method is demonstrated to form an SOI substrate having a silicon layer with reduced surface roughness in a high yield. The method includes the step of bonding a base substrate such as a glass substrate and a bond substrate such as a single crystal semiconductor substrate to each other, where a region in which bonding of the base substrate with the bond substrate cannot be performed is provided at the interface therebetween. Specifically, the method is exemplified by the combination of: irradiating the bond substrate with accelerated ions; forming an insulating layer over the bond substrate; forming a region in which bonding cannot be performed in part of the surface of the bond substrate; bonding the bond substrate and the base substrate to each other with the insulating layer therebetween; and separating the bond substrate from the base substrate, leaving a semiconductor layer over the base substrate. | 11-18-2010 |
20100291753 | SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - A single crystal semiconductor layer is formed over a substrate having an insulating surface by the following steps: forming an ion doped layer at a given depth from a surface of a single crystal semiconductor substrate; performing plasma treatment to the surface of the single crystal semiconductor substrate; forming an insulating layer on the single crystal semiconductor substrate to which the plasma treatment is performed; bonding the single crystal semiconductor substrate to the substrate having the insulating surface with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate using the ion doped layer as a separation surface. As a result, a semiconductor substrate in which a defect in an interface between the single crystal semiconductor layer and the insulating layer is reduced can be provided. | 11-18-2010 |
20100291754 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved. | 11-18-2010 |
20100291755 | MANUFACTURING METHOD OF SOI SUBSTRATE - An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate. | 11-18-2010 |
20100297828 | METHOD FOR FABRICATING A SEMICONDUCTOR ON INSULATOR TYPE SUBSTRATE - A method for fabricating a substrate of the semiconductor on insulator type by forming an epitaxial layer of semiconducting material on a donor substrate having oxygen precipitates with a density of less than 10 | 11-25-2010 |
20100304550 | MANUFACTURING METHOD OF SOI SUBSTRATE - An object is to provide a manufacturing method of an SOI substrate in which a plurality of single crystal semiconductor layers uniform in quality is bonded to a substrate having a larger area than a single crystal silicon substrate. At the time of a heat treatment, uniform heat distribution in single crystal semiconductor substrates is realized by using a tray which has depression portions each with a large depth and is not in contact with the single crystal semiconductor substrate bonded to a base substrate as a tray for supporting the base substrate and holding the single crystal semiconductor substrates. Further, by providing a supporting portion for the base substrate between the depression portions of the tray, a contact area between the tray and the base substrate is reduced. | 12-02-2010 |
20100311221 | Method for manufacturing semiconductor substrate - Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate | 12-09-2010 |
20100311222 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified. | 12-09-2010 |
20100323496 | PROCESS FOR MANUFACTURING A COMPOSITE SUBSTRATE - The invention relates to a process for manufacturing a composite substrate comprising bonding a first substrate ( | 12-23-2010 |
20100323497 | METHOD OF TRANSFERRING A THIN LAYER ONTO A TARGET SUBSTRATE HAVING A COEFFICIENT OF THERMAL EXPANSION DIFFERENT FROM THAT OF THE THIN LAYER - A method of transferring a thin layer from a source substrate having a surface layer of a first material along a free surface thereof to a target substrate having at least one surface layer of a second material along a free surface thereof, where the first material differs from the second material, includes forming within the surface layer of the source substrate a weakened zone delimiting a thin layer with respect to the free surface, and assembling the free surface of the source substrate to the free surface of the target substrate in a stack of alternating layers comprising the first and second materials, so that there are, on either side of an interface formed by bringing the free surfaces into intimate contact. The cumulative thicknesses of the layers of the first material are substantially equal to the cumulative thickness of the layers of the second material, the layers having thicknesses at least equal to 50 microns and at least 1000 times the depth at which the weakened zone is formed. The thin layer is detached by applying at least partially thermal energy to fracture the weakened zone. | 12-23-2010 |
20100330777 | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE - Disclosed is a method for reprocessing a semiconductor substrate which is by-produced in manufacturing a silicon-on-insulator substrate. The method includes: forming an embrittlement layer in a single crystal semiconductor substrate; bonding the single crystal semiconductor substrate with a base substrate having an insulating surface; and separating the single crystal semiconductor substrate along the embrittlement layer to give a silicon-on-insulator substrate and a semiconductor substrate to be reprocessed. The above steps provide, in the peripheral portion on the semiconductor substrate, a projection comprising the embrittlement layer and a single crystal semiconductor layer over the embrittlement layer. The method is characterized by an etching step to selectively remove the projection without etching a portion where the projection is absent, which allows the semiconductor substrate to be reused for the production of another silicon-on-insulator substrate. | 12-30-2010 |
20100330778 | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE - The embrittlement layer and the semiconductor layer remaining on the periphery of the semiconductor substrate after separation are selectively removed using a mixed solution containing a substance functioning as an oxidizer for oxidizing a semiconductor, a substance dissolving an oxide of a semiconductor, and a substance functioning as a decelerator of oxidization of a semiconductor and dissolution of an oxide of a semiconductor. Note that the semiconductor film is separated from the semiconductor substrate along an embrittlement layer that is formed in the semiconductor substrate by implantation of an H | 12-30-2010 |
20100330779 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SOI SUBSTRATE - A bond substrate is irradiated with accelerated ions to form an embrittled region in the bond substrate; an insulating layer is formed over a surface of the bond substrate or a base substrate; the bond substrate and the base substrate are bonded to each other with the insulating layer interposed therebetween; a region in which the bond substrate and the base substrate are not bonded to each other and which is closed by the bond substrate and the base substrate is formed in parts of the bond substrate and the base substrate; the bond substrate is separated at the embrittled region by heat treatment; and a semiconductor layer is formed over the base substrate. | 12-30-2010 |
20110003460 | METHOD FOR TREATING SURFACE OF SOI SUBSTRATE - A method for minimizing thickness variation of a substrate in an anneal step and achieving the smoothing of the surface of the substrate. Specifically provided is a method for treating the surface of a SOI substrate, including the steps of treating the surface of the SOI substrate by the PACE method using a plasma or the GCIB method using a gas cluster ion beam and subjecting the treated substrate to a heat treatment in argon atmosphere or an inert gas atmosphere containing 4 vol % or less of hydrogen so that the treated SOI substrate can be annealed. | 01-06-2011 |
20110003461 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An SOI substrate having a single crystal semiconductor layer with high surface planarity is manufactured. A semiconductor substrate is doped with hydrogen, whereby a damaged region which contains large quantity of hydrogen is formed. After a single crystal semiconductor substrate and a supporting substrate are bonded together, the semiconductor substrate is heated, whereby the single crystal semiconductor substrate is separated in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation plane of the single crystal semiconductor layer separated from the single crystal semiconductor substrate, laser beam irradiation is performed. By irradiation with a laser beam, the single crystal semiconductor layer is melted, whereby planarity of the surface of the single crystal semiconductor layer is improved and re-single-crystallization is performed. | 01-06-2011 |
20110008946 | Manufacturing methods of SOI substrate and semiconductor device - A manufacturing method of an SOI substrate and a manufacturing method of a semiconductor device are provided. When a large-area single crystalline semiconductor film is formed over an enlarged substrate having an insulating surface, e.g., a glass substrate by an SOI technique, the large-area single crystalline semiconductor film is formed without any gap between plural single crystalline semiconductor films, even when plural silicon wafers are used. An aspect of the manufacturing method includes the steps of disposing a first seed substrate over a fixing substrate; tightly arranging a plurality of single crystalline semiconductor substrates over the first seed substrate to form a second seed substrate; forming a large-area continuous single crystalline semiconductor film by an ion implantation separation method and an epitaxial growth method; forming a large-area single crystalline semiconductor film without any gap over a large glass substrate by an ion implantation separation method again. | 01-13-2011 |
20110014775 | METHOD FOR PRODUCING SILICON FILM TRANSFERRED INSULATOR WAFTER - [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer. | 01-20-2011 |
20110014776 | METHOD FOR PRODUCING SOI SUBSTRATE - A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate. | 01-20-2011 |
20110027968 | SEMICONDUCTOR DEVICE - A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer. | 02-03-2011 |
20110027969 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer. | 02-03-2011 |
20110034006 | METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE - A method for fabricating a semiconductor on insulator substrate by providing a first semiconductor substrate with a first impurity density of a first impurity type, subjecting the first semiconductor substrate to a first thermal treatment to thereby reduce the first impurity density in a modified layer adjacent a surface of the first semiconductor substrate being treated, transferring at least partially the modified layer with the reduced first impurity density onto a second substrate, to thereby obtain a modified second substrate, and providing a further layer on a transferred layer of the modified second substrate with the further layer having a second impurity density of a second impurity type that is different than the first impurity type of the transferred modified layer. By doing so, a contamination by dopants of the second impurity type of a fabrication line using semiconductor material with dopants of the first impurity type, can be prevented. | 02-10-2011 |
20110039394 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device in which manufacturing cost can be reduced, and a manufacturing method of a semiconductor device with reduced manufacturing time and improved yield. A manufacturing method of a semiconductor device is provided, which includes the steps of forming a first layer containing a metal over a substrate, forming a second layer containing an inorganic material on the first layer, forming a third layer including a thin film transistor on the second layer, irradiating the first layer, the second layer, and the third layer with laser light to form an opening portion through at least the second layer and the third layer. | 02-17-2011 |
20110039395 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied. | 02-17-2011 |
20110045654 | GERMANIUM LAYER POLISHING - In order to polish a layer of germanium ( | 02-24-2011 |
20110045655 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING APPARATUS OF THE SAME - Instead of forming a semiconductor film by bonding a bond substrate (semiconductor substrate) to a base substrate (supporting substrate) and then separating or cleaving the bond substrate, a bond substrate is separated or cleaved at a plurality of positions to form a plurality of first semiconductor films (mother islands), and then the plurality of first semiconductor films are bonded to a base substrate. Subsequently, the plurality of first semiconductor films each are partially etched, whereby one or more second semiconductor films (islands) are formed using one of the first semiconductor films and a semiconductor element is manufactured using the second semiconductor films. The plurality of first semiconductor films are bonded to the base substrate based on a layout of the second semiconductor films so as to cover at least a region in which the second semiconductor films of the semiconductor element are to be formed. | 02-24-2011 |
20110053344 | SEMICONDUCTOR ON INSULATOR AND METHODS OF FORMING SAME USING TEMPERATURE GRADIENT IN AN ANODIC BONDING PROCESS - Methods and apparatus for producing a semiconductor on glass (SOG) structure include: bringing a first surface of a glass substrate into direct or indirect contact with a semiconductor wafer; heating at least one of the glass substrate and the semiconductor wafer such that a second surface of the glass substrate, opposite to the first surface thereof, is at a lower temperature than the first surface; applying a voltage potential across the glass substrate and the semiconductor wafer; and maintaining the contact, heating and voltage to induce an anodic bond between the semiconductor wafer and the glass substrate via electrolysis. | 03-03-2011 |
20110053345 | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE - An object is to provide a method suitable for reprocessing a semiconductor substrate which is reused to manufacture an SOI substrate. A semiconductor substrate is reprocessed in the following manner: etching treatment is performed on a semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer exists in a peripheral portion, whereby the insulating layer is removed; and etching treatment is performed on the semiconductor substrate with the use of a mixed solution including a substance that oxidizes a semiconductor material included in the semiconductor substrate, a substance that dissolves the oxidized semiconductor material, and a substance that controls oxidation speed of the semiconductor material and dissolution speed of the oxidized semiconductor material, whereby the damaged semiconductor region is selectively removed with a non-damaged semiconductor region left. | 03-03-2011 |
20110053346 | DICING/DIE BONDING FILM - A dicing die-bonding film comprising a dicing film having a pressure-sensitive adhesive layer on a base material, and a die-bonding film formed on the dicing film, wherein the pressure-sensitive adhesive layer contains a polymer obtained by the addition reaction of an acrylic polymer containing 10 to 40 mol % of a hydroxyl group-containing monomer with 70 to 90 mol % of an isocyanate compound having a radical reactive carbon-carbon double bond based on the hydroxyl group-containing monomer, and 2 to 20 parts by weight of a crosslinking agent including in the molecule two or more functional groups having reactivity with a hydroxyl group based on 100 parts by weight of the polymer, and the pressure-sensitive adhesive layer is also cured by irradiation with ultraviolet rays under predetermined conditions, and wherein the die-bonding film comprises an epoxy resin, and is also bonded on the pressure-sensitive adhesive layer after irradiation with ultraviolet rays. | 03-03-2011 |
20110053347 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - It is an object to provide a method for manufacturing an SOI substrate in which reduction in yield can be suppressed while impurity diffusion into a semiconductor film is suppressed. A semiconductor substrate provided with an oxide film is formed by thermally oxidizing the surface of the semiconductor substrate. Plasma is generated under an atmosphere of a gas containing nitrogen atoms and plasma nitridation is performed on part of the oxide film, so that a semiconductor substrate in which an insulating film containing nitrogen atoms is formed over the oxide film is obtained. After bonding the insulating film containing nitrogen atoms and a glass substrate to each other, the semiconductor substrate is split, whereby an SOI substrate in which the insulating film containing nitrogen atoms, the oxide film, a thin semiconductor film are stacked in this order is formed. | 03-03-2011 |
20110065257 | HIGH-TEMPERATURE SPIN-ON TEMPORARY BONDING COMPOSITIONS - New compositions and methods of using those compositions as bonding compositions are provided. The compositions are preferably thermoplastic and comprise imides, amideimides, and/or amideimide-siloxanes (either in polymeric or oligomeric form) dispersed or dissolved in a solvent system, and can be used to bond an active wafer to a carrier wafer or substrate to assist in protecting the active wafer and its active sites during subsequent processing and handling. The compositions form bonding layers that are chemically and thermally resistant, but that can also be softened to allow the wafers to slide apart at the appropriate stage in the fabrication process. | 03-17-2011 |
20110076836 | METHOD FOR THE ULTRASONIC PLANARIZATION OF A SUBSTRATE, FROM ONE SURFACE OF WHICH A BURIED WEAKENED LAYER HAS BEEN UNCOVERED BY FRACTURE - A method for forming a plurality of thin films from a microtechnological donar substrate with a view to recycling of the donor substrate, the method including exposing a face of the donor substrate by fracturing the donor substrate along a layer weakened by implantation and placing the exposed face in a bath and applying ultrasound with a frequency of between 10 kHz and 80 kHz under conditions suitable for causing cavitation along the exposed face. In the case of a silicon donor substrate, the bath is exposed to an ultrasound power per unit volume of greater than 5 W/I, at a power of greater than 10 W with a duration of greater than 1 minute, and at a temperature between 1° C. and 100° C. | 03-31-2011 |
20110076837 | MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 03-31-2011 |
20110092050 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A first embrittlement layer is formed by doping a first single-crystal semiconductor substrate with a first ion; a second embrittlement layer is formed by doping a second single-crystal semiconductor substrate with a second ion; the first and second single-crystal semiconductor substrates are bonded to each other; the first single-crystal semiconductor film is formed over the second single-crystal semiconductor substrate by a first heat treatment; an insulating substrate is bonded over the first single-crystal semiconductor film; and the first and second single-crystal semiconductor films are formed over the insulating substrate by a second heat treatment. A dose of the first ion is higher than that of the second ion and a temperature of the first heat treatment is lower than that of the second heat treatment. | 04-21-2011 |
20110092051 | PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP - A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate. | 04-21-2011 |
20110097871 | Process for the transfer of a thin layer formed in a substrate with vacancy clusters - Methods for forming semiconductor structures comprising a layer transferred from a donor substrate are provided in which the resulting structure has improved quality with respect of defects, and resulting structures therefrom. For example, a semiconductor on insulator (SeOI) structure can be formed by a method comprising: —providing a donor substrate ( | 04-28-2011 |
20110097872 | METHOD OF MANUFACTURING SOI SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either the first insulating film or the second insulating film is exposed to a plasma atmosphere or an ion atmosphere, and that surface of the first insulating film or the second insulating film is activated; the first substrate and the second substrate are bonded together with the first insulating film and the second insulating film interposed therebetween; a single-crystal silicon film is separated from the first substrate at an interface of the embrittled layer of the first substrate, and a thin film single-crystal silicon film is formed over the second substrate with the first insulating film and the second insulating film interposed therebetween. | 04-28-2011 |
20110097873 | METHOD FOR PRODUCING THIN FILM - A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film. | 04-28-2011 |
20110104870 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film. | 05-05-2011 |
20110104871 | METHOD FOR MANUFACTURING BONDED SUBSTRATE - Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m | 05-05-2011 |
20110111575 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface. | 05-12-2011 |
20110117726 | BONDED INTERMEDIATE SUBSTRATE AND METHOD OF MAKING SAME - A method includes growing a first epitaxial layer of III-nitride material, forming a damaged region by implanting ions into an exposed surface of the first epitaxial layer, and growing a second epitaxial layer of III-nitride material on the exposed surface of the first epitaxial layer. A level of defects present in the second epitaxial layer is less than a level of defects present in the first epitaxial layer. | 05-19-2011 |
20110117727 | METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER - According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide. | 05-19-2011 |
20110124179 | SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF - The semiconductor substrate provided with a groove portion is irradiated with ions so that an embrittled region is formed in the semiconductor substrate, the semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween and a space which is surrounded by the groove portion in the semiconductor substrate and the base substrate is formed, and heat treatment is performed to separate the semiconductor substrate at the embrittled region, so that the semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween. | 05-26-2011 |
20110129987 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a structure and a manufacturing method for efficiently forming a transistor to which tensile strain is preferably applied and a transistor to which compressive strain is preferably applied over the same substrate when stress is applied to a semiconductor layer in order to improve mobility of the transistors in a semiconductor device. Plural kinds of transistors which are separated from a single-crystal semiconductor substrate and include single-crystal semiconductor layers bonded to a substrate having an insulating surface with a bonding layer interposed therebetween are provided over the same substrate. One of the transistors uses a single-crystal semiconductor layer as an active layer, to which tensile strain is applied. The other transistors use single-crystal semiconductor layers as active layers, to which compressive strain using part of heat shrink generated by heat treatment of the base substrate after bonding is applied. | 06-02-2011 |
20110129988 | METHOD OF MAKING MULTIPLE IMPLANTATIONS IN A SUBSTRATE - A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane. | 06-02-2011 |
20110136320 | METHOD OF MANUFACTURING SOI SUBSTRATE - To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered. | 06-09-2011 |
20110143521 | APPARATUS AND METHOD FOR SIMULTANEOUS TREATMENT OF MULTIPLE WORKPIECES - A system for simultaneously treating multiple workpieces is configured with treatment sites, configured to hold respective workpieces, fixed on a rotatable base. Treatment stations are equipped with respective active components operable simultaneously to treat respective workpieces identically on respective aligned treatment sites. For loading and unloading the treatment sites are rotated through distinct loading and unloading stations of the treatment stations which allow loading of a second batch while a first batch is being unloaded. | 06-16-2011 |
20110143522 | RELAXATION OF STRAINED LAYERS - The present invention relates to a method for relaxing a strained material layer by depositing a first low-viscosity layer on a first face of a strained-material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained-material layer; and applying a mechanical pressure to a second face of the strained material layer which is opposite to the first face. The mechanical pressure is applied perpendicularly to the strained material layer during at least part of the heat treatment. | 06-16-2011 |
20110151643 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of the ion implanted layer and before the bonding, a plasma treatment is carried out with respect to a bonding surface of at least one of the bond wafer and the base wafer. The delamination heat treatment is carried out at a fixed temperature by directly putting the bonded wafer into a heat-treating furnace whose furnace temperature is set to the fixed temperature less than 475° C. without a temperature increasing step. | 06-23-2011 |
20110159665 | METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE - This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure. | 06-30-2011 |
20110165758 | METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE - The invention relates to a method for making a structure for use ion applications in the fields of electronics, optics or optoelectronics. The structure includes a thin layer of semiconducting material on a supporting substrate. The method includes bonding the thin layer onto the supporting substrate by molecular adhesion at a bonding interface to obtain a structure; implanting ions at the bonding interface to transfer atoms from the thin layer to transfer atoms between the thin layer and the supporting substrate or vice versa; and heat-treating the structure in order to stabilize the bonding interface. | 07-07-2011 |
20110171812 | FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL - The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. In another embodiment, the method includes providing a source substrate with a weakened zone defining a nucleation layer, bonding a support substrate to the source substrate, detaching the nucleation layer and support substrate at the weakened zone by applying laser irradiation stress, depositing a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited layer and removing the support substrate and nucleation layer. The result is a semiconductor substrate that includes the layer of semiconductor material on a support or target substrate. | 07-14-2011 |
20110171813 | Release Strategies for Making Transferable Semiconductor Structures, Devices and Device Components - Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components. | 07-14-2011 |
20110183493 | PROCESS FOR MANUFACTURING A STRUCTURE COMPRISING A GERMANIUM LAYER ON A SUBSTRATE - The present invention relates to a process for manufacturing a structure comprising a germanium layer ( | 07-28-2011 |
20110183494 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Manufacturing cost of an SOI substrate is reduced. Yield of an SOI substrate is improved. A method for manufacturing an SOI substrate includes the steps of irradiating a single crystal semiconductor substrate with ions to form an embrittled region in the single crystal semiconductor substrate, bonding the single crystal semiconductor substrate to a base substrate with an insulating film therebetween, and separating the single crystal semiconductor substrate and the base substrate at the embrittled region to form a semiconductor layer over the base substrate with the insulating film therebetween. In the step of forming the embrittled region, ion species which are not mass-separated are used as the ions and a temperature of the single crystal semiconductor substrate is set to 250° C. or higher at the time of irradiation with the ions. | 07-28-2011 |
20110201176 | PRESSURIZED TREATMENT OF SUBSTRATES TO ENHANCE CLEAVING PROCESS - A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included. | 08-18-2011 |
20110201177 | METHOD IN THE MICROELECTRONICS FIELDS OF FORMING A MONOCRYSTALLINE LAYER - A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film. | 08-18-2011 |
20110207292 | METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE - Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time. | 08-25-2011 |
20110207293 | METHOD OF PRODUCING A HYBRID SUBSTRATE HAVING A CONTINUOUS BURIED EECTRICALLY INSULATING LAYER - A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface. | 08-25-2011 |
20110212596 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere. | 09-01-2011 |
20110212597 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Suppression of generation of a stripe pattern (unevenness) when an SOI substrate is manufactured by a glass substrate and a single crystal semiconductor substrate bonded to each other. A single crystal semiconductor substrate is irradiated with ions so that a fragile region is formed in the single crystal semiconductor substrate; a depression or a projection is formed in a region of a surface of an insulating layer provided on the single crystal semiconductor substrate, the region corresponding to the periphery of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate; thermal treatment is performed thereon to separate the single crystal semiconductor substrate at the fragile region, so that a single crystal semiconductor layer is formed over the base substrate; and the single crystal semiconductor layer in the region corresponding to the periphery is removed. | 09-01-2011 |
20110212598 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer including at least the steps of: forming an ion-implanted layer inside a bond wafer; bringing the ion-implanted surface of the bond wafer into close contact with a surface of a base wafer directly or through a silicon oxide film; and performing heat treatment for delaminating the bond wafer at the ion-implanted layer, wherein the heat treatment step for delaminating includes performing a pre-annealing at a temperature of less than 500° C. and thereafter performing a delamination heat treatment at a temperature of 500° C. or more, and the pre-annealing is performed at least by a heat treatment at a first temperature and a subsequent heat treatment at a second temperature higher than the first temperature. As a result, there is provided a method for manufacturing a bonded wafer having high quality, for example, mainly the reduction of defects, by forming a high bonding strength state at a lower temperature than the temperature at which the delamination is caused, in the manufacture of the bonded wafer by the Smart Cut method (registered trademark). | 09-01-2011 |
20110217825 | FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE - A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure. | 09-08-2011 |
20110223740 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film. | 09-15-2011 |
20110223741 | METHOD AND SYSTEM FOR STRIPPING THE EDGE OF A SEMICONDUCTOR WAFER - A method and a system are described herein for applying etchant to edges of a plurality of wafers. The system includes a sump configured for holding etchant, a roller having an outer surface in fluid communication with the sump and configured to have etchant thereon, a wafer cassette configured to retain wafers positioned therein so that edges of the wafers are in contact with the roller. The cassette permits axial rotation of the wafers about an axis. A method of applying etchant to the edge of the wafer includes placing the wafer edge in contact with the roller and rotating the roller about a longitudinal axis of the roller. At least a portion of the roller contact an etchant contained in a sump during rotation so that etchant is applied to the wafer edge. | 09-15-2011 |
20110230034 | METHOD OF THINNING A STRUCTURE - A method for thinning a structure of at least two assembled wafers, where one of the wafers includes channels on its surface facing the other wafer. In order to cause thinning of the structure, a fluid is introduced into the channels in a supercritical state and the fluid is passed from the supercritical state into the gaseous state. The channels do not open to the outside of the structure, such that the method further includes forming at least one access opening to the channels from the outer surface of the structure and before introducing the fluid in the supercritical state. | 09-22-2011 |
20110237049 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer including the steps of: implanting at least one gas ion of a hydrogen ion and a rare gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an oxide film; thereafter delaminating the bond wafer at the ion-implanted layer to prepare the bonded wafer having a silicon thin film formed on the base wafer; and performing a flattening heat treatment on the bonded wafer under an atmosphere containing hydrogen or hydrogen chloride, wherein a dopant gas is added into the atmosphere of the flattening heat treatment to perform the heat treatment, the dopant gas having the same conductivity type as a dopant contained in the silicon thin film. | 09-29-2011 |
20110244652 | METHOD OF MANUFACTURING SOI SUBSTRATE - An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond substrate and the base substrate with an insulating layer positioned therebetween; a step of splitting the bond substrate at the embrittlement region to leave a semiconductor layer bonded to the base substrate; a step of disposing the semiconductor layer in front of a semiconductor target containing the same semiconductor material as the semiconductor layer; and a step of alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized. | 10-06-2011 |
20110244653 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high yield. Another object of the present invention is to manufacture, with a high yield, a semiconductor device which has stable characteristics. In the process of manufacturing a semiconductor substrate, when an embrittled region is to be formed in a single crystalline semiconductor substrate, the surface of the single crystalline semiconductor substrate is irradiated with hydrogen ions from oblique directions at multiple (at least two) different angles, thereby allowing the influence of a foreign substance adhering to the single crystalline semiconductor substrate to be reduced and allowing a semiconductor substrate including a uniform single crystalline semiconductor layer to be manufactured with a high yield. | 10-06-2011 |
20110244654 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth. | 10-06-2011 |
20110244655 | METHOD FOR FABRICATING SOI SUBSTRATE - There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface | 10-06-2011 |
20110263095 | TEMPORARY BONDING ADHESIVE FOR A SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - To provide a temporary bonding adhesive for a semiconductor wafer that can reduce damage to the semiconductor wafer, is easily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using the same. | 10-27-2011 |
20110263096 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation of a surface of a semiconductor wafer with cluster ions to form a separation layer in the semiconductor wafer. The semiconductor wafer and a substrate having an insulating surface are then overlapped with each other and bonded, which is followed by thermal treatment to separate the semiconductor wafer at or around the separation layer. A separation wafer and an SOT substrate which has a crystalline semiconductor layer over the substrate having the insulating surface are simultaneously obtained by the process A. The process B includes treatment of the separation wafer for reusing, which allows the separation wafer to be successively subjected to the process A. | 10-27-2011 |
20110269295 | Method of Forming a Semiconductor Wafer that Provides Galvanic Isolation - A semiconductor wafer that provides galvanic isolation is formed in a very cost efficient manner by attaching a non-conductive wafer to a silicon wafer to form a hybrid wafer, and then simultaneously wet etching a large number of hybrid wafers to form a thin non-conductive wafer that is attached to a thick silicon wafer. After a large number of high-voltage devices have been formed on the thin non-conductive wafer, the thick silicon wafer is thinned or removed so that the hybrid wafer is suitable for packaging. | 11-03-2011 |
20110281420 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. | 11-17-2011 |
20110287605 | METHOD FOR MANUFACTURING SOI SUBSTRATE - Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light. | 11-24-2011 |
20110300690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 12-08-2011 |
20110306180 | Systems, Methods and Products Involving Aspects of Laser Irradiation, Cleaving, and/or Bonding Silicon-Containing Material to Substrates - Systems, methods and products by process are disclosed relating to structures and/or fabrication thereof as relating, for example, to optical/electronic applications such as solar cells and displays. In one exemplary implementation, there is provided a method of producing a composite structure. Moreover, the method may include engaging a silicon-containing material into contact with a surface of the substrate and irradiating/treating the silicon-containing piece with a laser. | 12-15-2011 |
20110312156 | CONTROLLED TEMPERATURE IMPLANTATION - In order to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment (post-fracture) of a donor substrate, the mean temperature of the donor substrate during implantation thereof is controlled so as to be in the range 20° C. to 150° C. with a maximum temperature variation of less than 30° C. | 12-22-2011 |
20120003813 | OXYGEN PLASMA CONVERSION PROCESS FOR PREPARING A SURFACE FOR BONDING - A process for preparing a surface of a material that is not bondable to make it bondable to the surface of another material. A non-bondable surface of a semiconductor wafer is treated with oxygen plasma to oxidize the surface of the wafer and make the surface smoother, hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The semiconductor wafer may have a barrier layer thereon formed of a material, such as SixNy or SiNxOy that is not bondable to another substrate, such as a glass substrate. In which case, the oxygen plasma treatment converts the surface of the barrier layer to oxide, such as SiO2, smoothing the surface and making the surface hydrophilic and bondable to the surface of another substrate, such as a glass substrate. The converted oxide layer may be stripped from the barrier layer or semiconductor wafer with an acid, in order to remove contamination on the surface of the barrier layer or semiconductor wafer, the stripped surface may undergo a second oxygen plasma treatment to further smooth the surface, and make the surface hydrophilic and bondable to the surface of another substrate | 01-05-2012 |
20120003814 | Methods For In-Situ Passivation Of Silicon-On-Insulator Wafers - Methods and systems are disclosed for performing a passivation process on a silicon-on-insulator wafer in a chamber in which the wafer is cleaved. A bonded wafer pair is cleaved within the chamber to form the silicon-on-insulator (SOI) wafer. A cleaved surface of the SOI wafer is then passivated in-situ by exposing the cleaved surface to a passivating substance. This exposure to a passivating substance results in the formation of a thin layer of oxide on the cleaved surface. The silicon-on-insulator wafer is then removed from the chamber. In other embodiments, the silicon-on-insulator wafer is first transferred to an adjoining chamber where the wafer is then passivated. The wafer is transferred to the adjoining chamber without exposing the wafer to the atmosphere outside the chambers. | 01-05-2012 |
20120003815 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor substrate includes providing a first semiconductor substrate, which includes a detaching layer spaced from an upper surface of the first semiconductor substrate; forming an ion-implanted layer proximate to an edge of the detaching layer; bonding a second semiconductor substrate to the first semiconductor substrate; forming a crack in the ion-implanted layer in response to applying stress to the ion-implanted layer; and detaching a portion of the first semiconductor substrate in response to cleaving through the crack. | 01-05-2012 |
20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
20120015498 | TEMPORARY SUBSTRATE, TRANSFER METHOD AND PRODUCTION METHOD - The present invention relates to a temporary substrate having a bonding surface prepared for receiving an additional substrate that will transfer a thin layer. This substrate includes a principal part or support and a surface layer thereon with the surface layer having a plurality of inserts therein. The inserts are made of a material having a coefficient of thermal expansion that is significantly different from that of the material constituting the surface layer. The present invention also relates to a processing method for transferring a selected portion of an original substrate as well as to a production method for manufacturing the temporary substrate. | 01-19-2012 |
20120015499 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. | 01-19-2012 |
20120021588 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - One object is to provide excellent electric characteristics of an end portion of a single crystal semiconductor layer having a tapered shape. An embrittled region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions. Then, the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating film interposed therebetween and a first single crystal semiconductor layer is formed over the base substrate with the insulating film interposed therebetween by separating the single crystal semiconductor substrate at the embrittled region. After that, a second single crystal semiconductor layer having a tapered end portion is formed by performing dry etching on the first single crystal semiconductor layer, and etching is performed on the end portion of the second single crystal semiconductor layer in a state where a potential on the base substrate side is a ground potential. | 01-26-2012 |
20120028438 | METHOD FOR SEPARATING A LAYER SYSTEM COMPRISING A WAFER - A method for mechanically separating a laminar structure from a carrier assembly is disclosed. The method can include providing a layered system comprising the carrier assembly, having a first carrier, and the laminar structure, having a wafer and optionally a second, stretchable carrier, and creating a mechanical stress in the interface region between carrier assembly and the laminar structure, so that the laminar structure is separated from the carrier assembly. The method also includes:
| 02-02-2012 |
20120034758 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A cap film which can prevent diffusion of hydrogen from the embrittled region and supply hydrogen to a region between the embrittled region and the surface of the semiconductor substrate is formed over the semiconductor substrate, and the semiconductor layer is transferred from the semiconductor substrate to the base substrate. In particular, the amount of hydrogen contained in the cap film formed over the semiconductor substrate is preferably greater than or equal to the irradiation amount of hydrogen ions. | 02-09-2012 |
20120034759 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit. | 02-09-2012 |
20120045883 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An SOI substrate is manufactured by the following method. An insulating layer is formed on a semiconductor substrate; an embrittled region is formed in the semiconductor substrate on which the insulating layer is formed by irradiating the semiconductor substrate with ions; a base substrate is heated to reduce moisture content attaching to a surface of the base substrate, wherein the base substrate after the heating faces and is in contact with the semiconductor substrate in which the embrittled region is formed, so that the base substrate and the semiconductor substrate are bonded to each other; and the bonded base substrate and semiconductor substrate is heated to separate the semiconductor substrate along the embrittled region to form a semiconductor layer over the base substrate. In this manner, the SOI substrate in which bonding defects are be sufficiently reduced can be provided. | 02-23-2012 |
20120058621 | FABRICATION OF SUBSTRATES WITH A USEFUL LAYER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL - The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate. | 03-08-2012 |
20120058622 | METHOD FOR PRODUCING BONDED WAFER - When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate ( | 03-08-2012 |
20120077330 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - First etching is performed on a surface of a single crystal semiconductor layer formed with no substrate bias applied. The single crystal semiconductor layer is formed by attaching a single crystal semiconductor substrate including an embrittled region to a supporting substrate so that an oxide layer is sandwiched between the single crystal semiconductor substrate and the supporting substrate and separating the single crystal semiconductor substrate into the single crystal semiconductor layer and part of the single crystal semiconductor substrate at the embrittled region. After the first etching, the single crystal semiconductor layer is irradiated with a laser beam and at least part of the surface of the single crystal semiconductor layer is melted and solidified. Then, second etching is performed on the surface of the single crystal semiconductor layer with no substrate bias applied. | 03-29-2012 |
20120083097 | Methods of Forming a Semiconductor Package Using a Seed Layer and Semiconductor Packages Formed Using the Same - Provided is a method of forming a semiconductor package including providing a substrate having a first side and an opposite second side and providing a wafer having a plurality of semiconductor chips, each of the semiconductor chips having a conductive pad, wherein at least one of the substrate and the wafer includes a seed pattern. The first side of the substrate is bonded to the wafer with the conductive pad positioned adjacent to the first side of the substrate and the seed pattern positioned between the conductive pad and the first side of the substrate. A through hole is then formed penetrating the substrate from the second side of the substrate to expose the seed pattern. A through electrode is formed in the through hole using the seed pattern as a seed. Corresponding devices are also provided. | 04-05-2012 |
20120083098 | Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core - According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate. | 04-05-2012 |
20120088351 | METHOD FOR TRANSFERRING AT LEAST ONE MICRO-TECHNOLOGICAL LAYER - A method for transferring a micro-technological layer includes preparing a substrate having a porous layer buried beneath a useful surface, forming an embrittled zone between it and the surface, bonding the substrate to a supporting substrate, causing detachment at the porous layer by mechanical stress to obtain a first substrate remnant, and a bare surfaced detached layer joined to the supporting substrate, performing technological steps on the bared surface of the detached layer, bonding the detached layer, by the surface to which the technological steps had been applied, to a second supporting substrate, causing detachment, at the embrittled zone, by heat treatment to obtain a detached layer remnant joined to the second supporting substrate, and the detached layer remnant joined to the first supporting substrate. | 04-12-2012 |
20120100690 | METHOD FOR MANUFACTURING A HETEROSTRUCTURE AIMING AT REDUCING THE TENSILE STRESS CONDITION OF THE DONOR SUBSTRATE - A method for manufacturing a heterostructure for applications in the fields of electronics, photovoltaics, optics or optoelectronics, by implanting atomic species in a donor substrate so as to form an embrittlement area therein, assembling a receiver substrate on the donor substrate, wherein the receiver substrate has a larger thermal expansion coefficient than that of the donor substrate, detaching a rear portion of the donor substrate along the embrittlement area so as to transfer a thin layer of interest of the donor substrate onto the receiver substrate, and applying a detachment annealing after assembling and but before detaching, in order to facilitate the detaching. The detachment annealing includes the simultaneous application of a first temperature to the donor substrate and a second temperature different from the first to the receiver substrate; with the first and second temperatures being selected to reduce the tensile stress condition of the donor substrate. | 04-26-2012 |
20120100691 | PROCESSES FOR FABRICATING HETEROSTRUCTURES - The invention relates to a process for fabricating a heterostructure. This process comprises heating an intermediate heterostructure. The intermediate heterostructure comprises a crystalline strain relaxation layer interposed directly between a first substrate and a strained layer of crystalline semiconductor material. The process further comprises causing plastic deformation of the crystalline strain relaxation layer and elastic deformation of the strained layer of crystalline semiconductor material to at least partially relax the strained layer of crystalline semiconductor material. | 04-26-2012 |
20120100692 | METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES WITH STRAINED SEMICONDUCTOR MATERIAL - Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the substrate using the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control a strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material. | 04-26-2012 |
20120108034 | Substrate Structure Having Buried Wiring And Method For Manufacturing The Same, And Semiconductor Device And Method For Manufacturing The Same Using The Substrate Structure - Provided are a substrate structure which may solve problems generated in a manufacturing process while having a relatively low resistance buried wiring, a method for manufacturing the substrate structure, and a semiconductor device and a method for manufacturing the same using the substrate structure. The substrate structure may include a supporting substrate, an insulating layer disposed on the supporting substrate, a line-shaped conductive layer pattern disposed in the insulating layer to extend in a first direction, and a line-shaped semiconductor pattern disposed in the insulating layer and on the conductive layer pattern to extend in the first direction and having a top surface exposed to the outside of the insulating layer. | 05-03-2012 |
20120122299 | METHOD FOR FORMING SUBSTRATE WITH BURIED INSULATING LAYER - A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S | 05-17-2012 |
20120129318 | ATMOSPHERIC PRESSURE PLASMA ETCHING APPARATUS AND METHOD FOR MANUFACTURING SOI SUBSTRATE - The atmospheric pressure plasma etching apparatus is provided with a state detecting unit for detecting a state of the object to be processed, and the operation of the atmospheric pressure plasma etching apparatus is controlled in accordance with information detected by the state detecting unit. Thus, in the atmospheric pressure plasma etching apparatus, the object to be processed can be etched while the state of the object to be processed is detected. Accordingly, the object to be processed can be etched favorably. Further, an SOI substrate is manufactured using the atmospheric pressure plasma etching apparatus, whereby both reduction in manufacturing cost of the SOI substrate and suppression of peeling in the SOI substrate can be achieved. | 05-24-2012 |
20120135584 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment. | 05-31-2012 |
20120149173 | 3D INTEGRATED CIRCUIT DEVICE FABRICATION WITH PRECISELY CONTROLLABLE SUBSTRATE REMOVAL - A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a non-transitory computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure. | 06-14-2012 |
20120156858 | OPTICAL DEVICE WAFER PROCESSING METHOD - A wafer processing method transfers an optical device layer (ODL) in an optical device wafer (ODW) to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer, and is partitioned by a plurality of crossing streets to define a plurality of regions where optical devices are formed. The transfer substrate is bonded to the front side of the ODL. The transfer substrate and the ODL cut along the streets. The transfer substrate is attached to a supporting member, and a laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the ODW and the transfer substrate. The focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate is then peeled off from the ODL. | 06-21-2012 |
20120156859 | PROCESS FOR FABRICATING INTEGRATED-CIRCUIT CHIPS - Front-side integrated parts of integrated-circuit chips are produced at locations on a substrate wafer. The front-side parts have a front side. A support wafer having a bearing side is mounted with the bearing side on top of said front-side parts. The support wafer includes at least one weak surface layer. This weak surface layer is attached to the substrate wafer using a retaining adhesive. In one implementation, the weak surface layer is attached to a front surface of the wafer. In another implementation, the weak surface layer is attached to a peripheral edge of the wafer. After attaching the support wafer, back-side integrated parts of the integrated-circuit chips are produced on the substrate wafer. The weak surface layer is then destroyed so as to demount the support wafer from the substrate wafer. | 06-21-2012 |
20120156860 | PRESSURIZED TREATMENT OF SUBSTRATES TO ENHANCE CLEAVING PROCESS - A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included. | 06-21-2012 |
20120164817 | METHOD FOR MANUFACTURING SOI SUBSTRATE - The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-separation type ion irradiation method is used, and to improve planarity of a surface of a single crystal semiconductor layer after separation as well as to improve throughput. The method includes the steps of irradiating a single crystal semiconductor substrate with accelerated ions by an ion doping method while the single crystal semiconductor substrate is cooled to form an embrittled region in the single crystal semiconductor substrate; bonding the single crystal semiconductor substrate and a base substrate with an insulating layer interposed therebetween; and separating the single crystal semiconductor substrate along the embrittled region to form a single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. | 06-28-2012 |
20120171843 | MICROSTRUCTURE, MICROMACHINE, AND MANUFACTURING METHOD OF MICROSTRUCTURE AND MICROMACHINE - Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer | 07-05-2012 |
20120178238 | MANUFACTURING METHOD OF SOI SUBSTRATE - An SOI substrate including a semiconductor layer whose thickness is even is provided. According to a method for manufacturing the SOI substrate, the semiconductor layer is formed over a base substrate. In the method, a first surface of a semiconductor substrate is polished to be planarized; a second surface of the semiconductor substrate which is opposite to the first surface is irradiated with ions, so that an embrittled region is formed in the semiconductor substrate; the second surface is attached to the base substrate, so that the semiconductor substrate is attached to the base substrate; and separation in the embrittled region is performed. The value of 3σ (σ denotes a standard deviation of thickness of the semiconductor layer) is less than or equal to 1.5 nm. | 07-12-2012 |
20120184084 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL. | 07-19-2012 |
20120184085 | METHOD FOR MANUFACTURING SOI SUBSTRATE - To suppress desorption of hydrogen ions with which a single crystal semiconductor substrate is irradiated. A method for manufacturing an SOI substrate includes the following steps: irradiating a semiconductor substrate with carbon ions; irradiating the semiconductor substrate with a hydrogen ion after the irradiation with the carbon ion so as to form an embrittled region in the semiconductor substrate; disposing a surface of the semiconductor substrate and a surface of a base substrate to face each other and to be in contact with each other so that the semiconductor substrate and the base substrate are bonded; and heating the semiconductor substrate and the base substrate which are bonded to each other and separating the semiconductor substrate along the embrittled region so that a semiconductor layer is formed over the base substrate. | 07-19-2012 |
20120190172 | METHOD FOR MAKING GALLIUM NITRIDE SUBSTRATE - A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon. | 07-26-2012 |
20120202337 | WAFER PROCESSING SHEET - Provided is a sheet for processing a wafer. The sheet can exhibit excellent heat resistance and dimensional stability, prevent breakage of a wafer in response to residual stress due to excellent stress relaxation properties, inhibit damage to or dispersion of the wafer due to application of a non-uniform pressure, and also exhibit excellent cuttability. The sheet can effectively prevent a blocking phenomenon from occurring during wafer processing. For these reasons, the sheet can be useful for processing a wafer in various wafer preparation processes such as dicing, back-grinding and picking-up. | 08-09-2012 |
20120208348 | METHOD OF MANUFACTURING SOI SUBSTRATE - The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step. | 08-16-2012 |
20120214291 | RELAXATION OF STRAINED LAYERS - A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material. | 08-23-2012 |
20120220102 | SEMICONDUCTOR DEVICE AND STRUCTURE - A method of manufacturing semiconductor wafers, the method comprising providing a donor wafer comprising a semiconductor substrate; performing a lithography step and process the said donor wafer accordingly; and performing at least two layers transfer out of said donor wafer wherein each of said at least two layer had been effected by said process | 08-30-2012 |
20120225536 | SEMICONDUCTOR STRUCTURES HAVING DIRECTLY BONDED DIAMOND HEAT SINKS AND METHODS FOR MAKING SUCH STRUCTURES - A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO | 09-06-2012 |
20120231607 | METHOD FOR FORMING A SILICON LAYER ON ANY SUBSTRATE USING LIGHT IRRADIATION - A method for forming a silicon layer according to inventive concept comprises: preparing an SOI substrate; applying an etchant or vapor of the etchant to the SOI substrate; and irradiating a light to the SOI substrate. | 09-13-2012 |
20120231608 | PRODUCTION PROCESS FOR SEMICONDUCTOR DEVICE - (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong. | 09-13-2012 |
20120238071 | SILICON LAYER TRANSFER SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A silicon layer transfer substrate includes a silicon substrate of a first substrate, a sacrificial layer, and a transfer silicon layer transferred to a second substrate, wherein the sacrificial layer has a silicon compound layer containing a compound of silicon and at least one element selected from a group consisting of germanium and carbon, and is provided on the silicon substrate of the first substrate, the silicon compound layer having a thickness equal to or smaller than a critical film thickness, the transfer silicon layer transferred to the second substrate is provided on the sacrificial layer, and at least either the silicon substrate or the silicon layer has a groove or a hole connected to the sacrificial layer. | 09-20-2012 |
20120244679 | METHOD FOR PRODUCING BONDED WAFER - The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method. | 09-27-2012 |
20120276716 | SEMICONDUCTOR WAFER-TO-WAFER BONDING FOR DISSIMILAR SEMICONDUCTOR DIES AND/OR WAFERS - A process for wafer-to-wafer bonding of a first wafer having a first set of dies of a first die size to a reconstituted wafer of a second set of dies having a second die size different than the first die size. The process includes aligning the second set of dies such that a second set of interconnects on the second set of dies aligns with a first set of interconnects on the first set of dies. The second set of dies includes a spacing between the second set of dies based on parameters of the first set of dies. The process also includes coupling the reconstituted wafer with the first wafer to create a wafer stack. | 11-01-2012 |
20120282757 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween. | 11-08-2012 |
20120322227 | METHOD FOR CONTROLLED LAYER TRANSFER - A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate. | 12-20-2012 |
20120322228 | METHOD FOR FORMING SOI SUBSTRATE AND APPARATUS FOR FORMING THE SAME - A bond substrate is attached with an incline toward the setting surface of a base substrate. Accordingly, an attachment starting portion can be limited. Further, the bond substrate is provided so that part of the bond substrate extends beyond a support base and the part is closest to the base substrate. Because of this, part of the bond substrate is separated from the support base with the use of an end portion of the support base as a fulcrum point because the support base is not provided below the contact portion, and attachment sequentially proceeds from a portion which gets close to the base substrate; thus, stable attachment can be performed without an air layer remaining at the interface between the bond substrate and the base substrate. | 12-20-2012 |
20120329242 | METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE - A method suitable to reprocess a semiconductor substrate is provided. A semiconductor substrate in which a projection including a damaged semiconductor region and an insulating layer is provided in a peripheral portion of the semiconductor substrate is subjected to etching treatment for removing the insulating layer and to etching treatment for removing the damaged semiconductor region selectively with a non-damaged semiconductor region left using a mixed solution including nitric acid, a substance dissolving a semiconductor material included in the semiconductor substrate and oxidized by the nitric acid, a substance controlling a speed of oxidation of the semiconductor material and a speed of dissolution of the oxidized semiconductor material, and nitrous acid, in which the concentration of the nitrous acid is higher than or equal to 10 mg/l and lower than or equal to 1000 mg/l. Through these steps, the semiconductor substrate is reprocessed. | 12-27-2012 |
20120329243 | PROCESS FOR FABRICATING A SEMICONDUCTOR STRUCTURE EMPLOYING A TEMPORARY BOND - The invention relates to a process for fabricating a semiconductor that comprises providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate; joining the handle substrate with a carrier substrate; optionally treating the carrier substrate; detaching the handle substrate at the sacrificial layer to form the semiconductor structure; and removing any residue of the sacrificial layer present on the seed substrate. | 12-27-2012 |
20120329244 | Capping Coating for 3D Integration Applications - A structure for a semiconductor component is provided having a bi-layer capping coating integrated and built on supporting layer to be transferred. The bi-layer capping protects the layer to be transferred from possible degradation resulting from the attachment and removal processes of the carrier assembly used for layer transfer. A wafer-level layer transfer process using this structure is enabled to create three-dimensional integrated circuits. | 12-27-2012 |
20130011997 | METHOD FOR PRODUCING A WAFER PROVIDED WITH CHIPS - A method for producing a product wafer having chips thereon, comprising the steps of:
| 01-10-2013 |
20130023107 | METHOD OF PROCESSING DEVICE WAFER - A method of processing a device wafer includes the carrier wafer preparing step of preparing a carrier wafer including an excessive carrier region on a surface thereof which is disposed in a position corresponding to an excessive outer circumferential region on a surface of the device wafer, the recess forming step of forming a recess in the excessive carrier region the carrier wafer, after the recess forming step, the adhesive placing step of placing an adhesive in the recess so as to project from the surface of the carrier wafer, after the adhesive placing step, the wafer bonding step of bonding the surface of the carrier wafer and the surface of the device wafer to each other, thereby securing the device wafer to the carrier wafer with the adhesive, and after the wafer bonding step, the thinning step of thinning the device wafer to a predetermined thickness by grinding or polishing a reverse side of the device wafer. | 01-24-2013 |
20130023108 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An insulating layer is formed on a surface of a semiconductor wafer which is to be a bond substrate and an embrittlement region is formed in the semiconductor wafer by irradiation with accelerated ions. Then, a base substrate and the semiconductor wafer are attached to each other. After that, the semiconductor wafer is divided at the embrittlement region by performing heat treatment and an SOI substrate including a semiconductor layer over the base substrate with the insulating layer interposed therebetween is formed. Before the SOI substrate is formed, heat treatment is performed on the semiconductor wafer at a temperature of higher than or equal to 1100° C. under a non-oxidizing atmosphere in which the concentration of impurities is reduced. In this manner, the planarity of the film formed on the semiconductor wafer when heat treatment is performed can be improved. | 01-24-2013 |
20130023109 | Temporary Wafer Bonding Method for Semiconductor Processing - A method for temporary wafer bonding employs a curable adhesive composition and a degradation agent combined with the curable adhesive composition. The adhesive composition may include (A) a polyorganosiloxane containing an average of at least two silicon-bonded unsaturated organic groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure the composition, (C) a catalytic amount of a hydrosilylation catalyst, and (D) a base. The film prepared by curing the composition is degradable and removable by heating. | 01-24-2013 |
20130029473 | METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME - A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted. | 01-31-2013 |
20130029474 | METHOD FOR TRANSFERRING A MONOCRYSTALLINE SEMICONDUCTOR LAYER ONTO A SUPPORT SUBSTRATE - A method for transferring a monocrystalline semiconductor layer onto a support substrate by implanting species in a donor substrate; bonding the donor substrate to the support substrate; and fracturing the donor substrate to transfer the layer onto the support substrate; wherein a portion of the monocrystalline layer to be transferred is rendered amorphous, without disorganizing the crystal lattice of a second portion of the layer, with the portions being, respectively, a surface portion and a buried portion of the monocrystalline layer; and wherein the amorphous portion is recrystallized at a temperature below 500° C., with the crystal lattice of the second portion serving as a seed for recrystallization. | 01-31-2013 |
20130040437 | Method of Manufacturing Composite Substrate - A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied. | 02-14-2013 |
20130045583 | METHOD FOR MEASURING DEFECTS IN A SILICON SUBSTRATE - A method for measuring defects in a silicon substrate obtained by silicon ingot pulling, wherein the defects have a size of less than 20 nm. The method includes applying a first defect consolidation heat treatment to the substrate at a temperature of between 750 and 850° C. for a time of between 30 minutes and 1 hour to consolidate the defects; applying a second defect enlargement heat treatment to the substrate at a temperature of between 900 and 1000° C. for a time of between 1 hour and 10 hour to enlarge the defects to a size of greater than or equal to 20 nm, with the enlarged defects containing oxygen precipitates; measuring size and density of the enlarged defects in a surface layer of the substrate; and calculating the initial size of the defects on the basis of the measurements of the enlarged defects. | 02-21-2013 |
20130071997 | METHOD FOR REDUCING IRREGULARITIES AT THE SURFACE OF A LAYER TRANSFERRED FROM A SOURCE SUBSTRATE TO A GLASS-BASED SUPPORT SUBSTRATE - A method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 μm and 600 μm. | 03-21-2013 |
20130084687 | METHOD FOR FORMATION OF AN ELECTRICALLY CONDUCTING THROUGH VIA - A method is for formation of an electrically conducting through-via within a first semiconductor support having a front face and comprising a silicon substrate. The method may include forming of a first insulating layer on top of the front face of the first semiconductor support, fabricating a handle including, within an additional rigid semiconductor support having an intermediate semiconductor layer, and forming on either side of the intermediate semiconductor layer of a porous region and of an additional insulating layer. The method may also include direct bonding of the first insulating layer and of the additional insulating layer, and thinning of the silicon substrate of the first semiconductor support so as to form a back face opposite to the front face. | 04-04-2013 |
20130089967 | TEMPORARY ADHESIVE COMPOSITION AND METHOD FOR MANUFACTURING THIN WAFER USING THE SAME - The present invention is a temporary adhesive composition comprising: (A) non-aromatic saturated hydrocarbon group-containing organopolysiloxane; (B) an antioxidant; and (C) an organic solvent, wherein the component (A) corresponds to 100 parts by mass, the component (B) corresponds to 0.5 to 5 parts by mass, and the component (C) corresponds to 10 to 1000 parts by mass. There can be provided a temporary adhesive composition that has excellent thermal stability while maintaining solvent resistance and a method for manufacturing a thin wafer using this. | 04-11-2013 |
20130089968 | METHOD FOR FINISHING SILICON ON INSULATOR SUBSTRATES - A process for finishing an as transferred layer on a semiconductor-on-insulator structure or a semiconductor-on-glass (or other insulator substrate) structure is provided by removing the damaged surface portion of a semiconductor layer while a leaving a smooth, finished semiconductor film on the glass. The damaged surface layer is treated with an oxygen plasma to oxidize the damaged layer and convert the damaged layer into an oxide layer. The oxide layer is then stripped in a wet bath, such as hydrofluoric acid bath, thereby removing the damaged portion of the semiconductor layer. The damaged layer may be an ion implantation damaged layer resulting from a thin film transfer processes used to make the semiconductor-on-insulator structure or the semiconductor-on-glass structure. | 04-11-2013 |
20130102126 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×10 | 04-25-2013 |
20130115753 | METHOD OF MANUFACTURING THIN FILM-BONDED SUBSTRATE - A method of manufacturing a thin film-bonded substrate in which a high-quality gallium nitride (GaN) thin film can be transferred. The method includes implanting ions into a first | 05-09-2013 |
20130130473 | SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME - A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film. | 05-23-2013 |
20130137241 | METHOD FOR THE PREPARATION OF A MULTI-LAYERED CRYSTALLINE STRUCTURE - This invention generally relates to a process for making a multi-layered crystalline structure. The process includes implanting ions into a donor structure, bonding the implanted donor structure to a second structure to form a bonded structure, cleaving the bonded structure, and removing any residual portion of the donor structure from the finished multi-layered crystalline structure. | 05-30-2013 |
20130143387 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 06-06-2013 |
20130149840 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other. | 06-13-2013 |
20130157439 | CHIP ASSEMBLY WITH A CORELESS SUBSTRATE EMPLOYING A PATTERNED ADHESIVE LAYER - A patterned adhesive layer including holes is employed to attach a coreless substrate layer to a stiffener. The patterned adhesive layer is confined to kerf regions, which are subsequently removed during singulation. Each hole in the patterned adhesive layer has an area that is greater than the area of a bottomside interconnect footprint of the coreless substrate. The patterned adhesive layer may include a permanent adhesive that is thermally curable or ultraviolet-curable. The composition of the stiffener can be tailored so that the thermal coefficient of expansion of the stiffener provides tensile stress to the coreless substrate layer at room temperature and at the bonding temperature. The tensile stress applied to the coreless substrate layer prevents or reduces warpage of the coreless substrate layer during bonding. Upon dicing, bonded stacks of a semiconductor chip and a coreless substrate can be provided without adhesive thereupon. | 06-20-2013 |
20130196483 | SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC - Boron nitride is used as a buried dielectric of an SOI structure including an SOI layer and a handle substrate. The boron nitride is located between an SOI layer and a handle substrate. Boron nitride has a dielectric constant and a thermal expansion coefficient close to silicon dioxide. Yet, boron nitride has a wet as well as a dry etch resistance that is much better than silicon dioxide. In the SOI structure, there is a reduced material loss of boron nitride during multiple wet and dry etches so that the topography and/or bridging are not an obstacle for device integration. Boron nitride has a low dielectric constant so that devices built in SOI active regions do not suffer from a charging effect. | 08-01-2013 |
20130196484 | PROCESS FOR PRODUCING A FILM, FOR EXAMPLE A SINGLE-CRYSTAL FILM, ON A POLYMER SUBSTRATE - A method for obtaining a film made out of a first material on a polymer support, said method comprising bonding a first wafer to a second wafer, thereby defining a bonding interface between said first wafer and said second wafer, at least one of said first and second wafers comprising a layer of said first material situated in proximity to said bonding interface, in said first wafer, hollowing out a cavity, said cavity comprising a bottom parallel to said bonding interface that defines, in said first wafer, a bottom zone at a controlled distance relative to said second wafer, forming, in said cavity, a polymer layer on a thickness controlled from a bottom thereof to obtain a combined wafer portion, said combined wafer portion comprising a bottom zone formed by said polymer layer on said bottom and a peripheral zone, and eliminating said second wafer on a major portion of a thickness thereof, thereby releasing, beneath said polymer layer, a film comprising said layer of said first material. | 08-01-2013 |
20130203236 | METHODS FOR MAKING THIN LAYERS OF CRYSTALLINE MATERIALS - Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections. | 08-08-2013 |
20130210214 | VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES - A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure. | 08-15-2013 |
20130217206 | METHODS OF PROVIDING THIN LAYERS OF CRYSTALLINE SEMICONDUCTOR MATERIAL, AND RELATED STRUCTURES AND DEVICES - Methods of fabricating semiconductor devices include forming a metal silicide in a portion of a crystalline silicon layer, and etching the metal silicide using an etchant selective to the metal silicide relative to the crystalline silicon to provide a thin crystalline silicon layer. Silicon-on-insulator (SOI) substrates may be formed by providing a layer of crystalline silicon over a base substrate with a dielectric material between the layer of crystalline silicone and the base substrate, and thinning the layer of crystalline silicon by forming a metal silicide layer in a portion of the crystalline silicon, and then etching the metal silicide layer using an etchant selective to the metal silicide layer relative to the crystalline silicon. | 08-22-2013 |
20130230966 | PROCESSING METHOD FOR BUMP-INCLUDED DEVICE WAFER - A processing method for a bump-included device wafer which includes an adhesive providing step of providing an adhesive in an annular groove of a carrier wafer so that the adhesive projects from the upper surface of an annular projection of the carrier wafer; a wafer attaching step of attaching and fixing the front side of the device wafer through the adhesive to the front side of the carrier wafer so as to accommodate bumps in a recess of the carrier wafer after performing the adhesive providing step; and a thickness reducing step of grinding or polishing the back side of the device wafer to reduce the thickness of the device wafer to a predetermined thickness after performing the wafer attaching step. | 09-05-2013 |
20130230967 | MANUFACTURING PROCESS FOR A STACKED STRUCTURE COMPRISING A THIN LAYER BONDING TO A TARGET SUBSTRATE - A process for manufacturing a stacked structure comprising at least one thin layer bonded to a target substrate, in which a thin layer is formed by introduction gaseous species into an initial substrate, to form a weakened layer separating a film from the rest of the initial substrate, a first contact face of the thin layer is bonded to a face of an intermediate substrate by molecular adhesion, and the initial substrate is fractured at the weakened layer so as to expose a free face of the thin layer. The intermediate substrate is then removed in order to obtain the stacked structure. | 09-05-2013 |
20130244400 | METHOD AND APPARATUS FOR TEMPORARY BONDING OF ULTRA THIN WAFERS - A method for temporary bonding first and second wafers includes, applying a first adhesive layer upon a first surface of a first wafer and then curing the first adhesive layer. Next, applying a second adhesive layer upon a first surface of a second wafer. Next, inserting the first wafer into a bonder module and holding the first wafer by an upper chuck assembly so that its first surface with the cured first adhesive layer faces down. Next, inserting the second wafer into the bonder module and placing the second wafer upon a lower chuck assembly so that the second adhesive layer faces up and is opposite to the first adhesive layer. Next, moving the lower chuck assembly upwards and bringing the second adhesive layer in contact with the cured first adhesive layer, and then curing the second adhesive layer. | 09-19-2013 |
20130244401 | Adhesive Composition, An Adhesive Sheet and a Production Method of a Semiconductor Device - An adhesive composition includes an acrylic polymer (A), a heat curable resin (B) having unsaturated hydrocarbon group, and a coupling agent (C) having reactive a double bond group. | 09-19-2013 |
20130244402 | Adhesive Composition, An Adhesive Sheet and a Production Method of a Semiconductor Device - An adhesive composition includes an acrylic polymer (A), a heat curable resin (B) having unsaturated hydrocarbon group, and a filler (C) having reactive double bond on a surface. | 09-19-2013 |
20130252400 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A single crystal substrate made of silicon carbide and a first support substrate having a size greater than a size of each of the single crystal substrates are prepared. The single crystal substrate is bonded onto the first support substrate. Process on the single crystal substrate bonded to the first support substrate is performed. The first support substrate is removed. The single crystal substrate is subjected to heat treatment. The single crystal substrate is bonded onto a second support substrate having a size greater than the size of the single crystal substrate. Process on the single crystal substrate bonded to the second support substrate is performed. | 09-26-2013 |
20130273713 | PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP - A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate. | 10-17-2013 |
20130273714 | METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS - A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded. | 10-17-2013 |
20130280885 | LASER-INITIATED EXFOLIATION OF GROUP III-NITRIDE FILMS AND APPLICATIONS FOR LAYER TRANSFER AND PATTERNING - A pulsed laser-initiated exfoliation method for patterning a Group III-nitride film on a growth substrate is provided. This method includes providing a Group III-nitride film a growth substrate, wherein a growth substrate/Group III-nitride film interface is present between the Group III-nitride film and the growth substrate. Next, a laser is selected that provides radiation at a wavelength at which the Group III-nitride film is transparent and the growth substrate is absorbing. The interface is then irradiated with pulsed laser radiation from the Group III-nitride film side of the growth substrate/Group III-nitride film interface to exfoliate a region of the Group III-nitride from the growth substrate. A method for transfer a Group-III nitride film from a growth substrate to a handle substrate is also provided. | 10-24-2013 |
20130302969 | WAFER PROCESSING METHOD - A ring adhesive tape having an annular adhesive layer in a peripheral area thereof is attached to the front side of a wafer having a device area and a peripheral area surrounding the device area. The annular adhesive layer of the ring adhesive tape is positioned so as to correspond to the peripheral marginal area of the wafer, so that the annular adhesive layer does not adhere to the device area. In peeling the ring adhesive tape from the front side of the wafer after forming modified layers inside the wafer, it is possible to prevent damage to the device area due to the adhesive force of the annular adhesive layer. | 11-14-2013 |
20130302970 | A METHOD OF HIGH TEMPERATURE LAYER TRANSFER - A method of transferring a layer from a donor substrate onto a receiving substrate comprises ionic implantation of at least one species into the donor substrate and forming a layer of concentration of the species intended to form microcavities or platelets; bonding the donor substrate with the receiving substrate by wafer bonding; and splitting at high temperature to split the layer in contact with the receiving substrate by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate. The method further comprises, after the first implantation step and before the splitting step, ionic implantation of silicon ions into the donor substrate to form a layer of concentration of silicon ions in the donor substrate, the layer of concentration of silicon ions at least partially overlapping the layer of concentration of the species intended to form microcavities or platelets. | 11-14-2013 |
20130309843 | SOS SUBSTRATE HAVING LOW DEFECT DENSITY IN VICINITY OF INTERFACE - A bonded SOS substrate having a semiconductor film on or above a surface of a sapphire substrate is obtained by a method with the steps of implanting ions from a surface of a semiconductor substrate to form an ion-implanted layer; activating at least a surface from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of 50° C. to 350° C.; heating the bonded substrates at a maximum temperature from 200° C. to 350° C. to form a bonded body; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate for embrittling an interface of the ion-implanted layer, while keeping the bonded body at a temperature higher than the temperature at which the surfaces of the semiconductor substrate and the sapphire substrate were bonded. | 11-21-2013 |
20130323906 | Method Of Manufacturing Thin-Film Bonded Substrate Used For Semiconductor Device - A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other. | 12-05-2013 |
20130344679 | ENVIRONMENTALLY-ASSISTED TECHNIQUE FOR TRANSFERRING DEVICES ONTO NON-CONVENTIONAL SUBSTRATES - A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate. | 12-26-2013 |
20140004684 | Method for Preparing GOI Chip Structure | 01-02-2014 |
20140030870 | SOS SUBSTRATE HAVING LOW SURFACE DEFECT DENSITY - Method of making a bonded SOS substrate with a semiconductor film on or above a sapphire substrate by implanting ions from a surface of the semiconductor substrate to form an ion-implanted layer; activating at least a surface of one of the sapphire substrate and the semiconductor substrate from which the ions have been implanted; bonding the surface of the semiconductor substrate and the surface of the sapphire substrate at a temperature of from 50° C. to 350° C.; heating the bonded substrates at a maximum temperature of from 200° C. to 350° C.; and irradiating visible light from a sapphire substrate side or a semiconductor substrate side to the ion-implanted layer of the semiconductor substrate to make the interface of the ion-implanted layer brittle at a temperature of the bonded body higher than the temperature at which the surfaces were bonded, to transfer the semiconductor film to the sapphire substrate. | 01-30-2014 |
20140038388 | METHOD FOR MANUFACTURING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE HAVING LOW ELECTRICAL LOSSES, AND CORRESPONDING STRUCTURE - A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes. | 02-06-2014 |
20140051229 | SUB-10 NM GRAPHENE NANORIBBON LATTICES - A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice including the ordered array of graphene nanoribbons is formed by utilizing a layer of porous anodized alumina as a template which includes dense alumina portions and adjacent amorphous alumina portions. The amorphous alumina portions are removed and the remaining dense alumina portions which have an ordered lattice arrangement are employed as an etch mask. After removing the amorphous alumina portions, each dense alumina portion has a width which is also less than 10 nm. | 02-20-2014 |
20140051230 | Methods for Forming Semiconductor Device Structures - The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. | 02-20-2014 |
20140087541 | Method for Manufacturing a Semiconductor Substrate, and Method for Manufacturing Semiconductor Devices Integrated in a Semiconductor Substrate - A method of manufacturing a semiconductor substrate includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, and forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface. The cavities are laterally spaced from each other by partition walls formed by semiconductor material of the wafer. The cavities form a separation region. The method further includes forming a semiconductor layer on the first surface of the semiconductor wafer, and breaking at least some of the partition walls by applying mechanical impact to the partition walls to split the semiconductor wafer along the separation region. | 03-27-2014 |
20140099776 | COMPRESSIVELY STRAINED SOI SUBSTRATE - A method of forming a strained silicon-on-insulator includes forming a first wafer having a compressively strained active semiconductor layer, forming a second wafer having an insulation layer formed above a bulk semiconductor layer, and bonding the compressively strained active semiconductor layer of the first wafer to the insulation layer of the second wafer. | 04-10-2014 |
20140106540 | METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TRANSFER - A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion. | 04-17-2014 |
20140113434 | PROCESS FOR FORMING A CRACK IN A MATERIAL - A process for forming a layer ( | 04-24-2014 |
20140127880 | SEMICONDUCTOR DIE SINGULATION METHOD AND APPARATUS - In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a first carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and using a mechanical device to apply localized pressure to the wafer to separate the back layer in the singulation lines. The localized pressure can be applied through the first carrier substrate proximate to the back layer, or can be applied through a second carrier substrate attached to a front side of the wafer opposite to the back layer. | 05-08-2014 |
20140147986 | WAFER DEBONDING USING LONG-WAVELENGTH INFRARED RADIATION ABLATION - Methods are provided for handling a device wafer. For example, a method includes providing a stack structure having a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and handler wafer, and irradiating the bonding structure with long-wavelength infrared energy to ablate the bonding structure. | 05-29-2014 |
20140147987 | METHOD FOR MANUFACTURING GALLIUM NITRIDE-BASED FILM CHIP - A method for manufacturing gallium nitride-based film chip is provided. The method comprises: growing a gallium nitride-based semiconductor multilayer structure on a sapphire substrate; thinning and polishing the sapphire substrate; coating a reflecting compound metal layer on the gallium nitride-based semiconductor multilayer structure by evaporating; coating a first glue on the reflecting compound metal layer and solidifying the first glue with a first temporary substrate; peeling the sapphire substrate off by laser; coating a second glue on the peeling surface and solidifying the second glue with a second temporary substrate; removing the first temporary substrate and the first glue; bonding the reflecting compound metal layer with a permanent substrate by eutectic bonding; removing the second temporary substrate and the second glue. | 05-29-2014 |
20140147988 | FIXED CURVATURE FORCE LOADING OF MECHANICALLY SPALLED FILMS - A spalling method is provided that includes depositing a stressor layer on surface of a base substrate, and contacting the stressor layer with a planar transfer. The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate. The planar transfer surface is traversed in a direction from a first edge of the base substrate to an opposing second edge of the base substrate to cleave the base substrate and transfer a spalled portion of the base substrate to the planar transfer surface. The vertical offset between the plane along which the planar transfer surface is traversed and the upper surface of the base substrate is a fixed distance. The fixed distance of the vertical offset provides a uniform spalling force. A spalling method is also provided that includes a transfer roller. | 05-29-2014 |
20140154868 | WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER - A wafer processing laminate, a wafer processing member, a temporary adhering material for processing a wafer, and a method for manufacturing a thin wafer, which facilitates to establish a temporary adhering the wafer and the support, enables to form a layer of uniform thickness on a heavily stepped substrate, and is compatible with the TSV formation and wafer back surface interconnect forming steps, and the wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed, wherein the temporary adhesive material layer includes a three-layered structure composite temporary adhesive material layer. | 06-05-2014 |
20140162433 | Methods and Apparatus for Transfer of Films Among Substrates - A method is disclosed which includes: forming at least one layer of material on at least part of a surface of a first substrate, wherein a first surface of the at least one layer of material is in contact with the first substrate thereby defining an interface; attaching a second substrate to a second surface of the at least one layer of material; forming bubbles at the interface; and applying mechanical force; whereby the second substrate and the at least one layer of material are jointly separated from the first substrate. Related arrangements are also described. | 06-12-2014 |
20140187020 | METHOD FOR LOW TEMPERATURE LAYER TRANSFER IN THE PREPARATION OF MULTILAYER SEMICONDUTOR DEVICES - A method of preparing a monocrystalline donor substrate, the method comprising (a) implanting helium ions through the front surface of the monocrystalline donor substrate to an average depth D | 07-03-2014 |
20140199823 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An SOT substrate ( | 07-17-2014 |
20140220764 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES - A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate. | 08-07-2014 |
20140220765 | METHOD FOR SEPARATING SUPPORT SUBSTRATE FROM SOLID-PHASE BONDED WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method is disclosed for separating a support substrate from a solid-phase bonded wafer which includes a Si wafer and support substrate solid-phase bonded to back surface of the Si wafer. The method includes a step of irradiating the Si wafer with laser light with a wavelength which passes through the Si wafer and is focused on a solid-phase bonding interface between the Si wafer and support substrate to form a breaking layer in at least part of an outer circumferential portion of the solid-phase bonding interface, a step of separating the breaking layer; and a step of separating the solid-phase bonding interface. The method is capable of using a Si thin wafer without substantial wafer cracking at an initial stage where the wafer is inputted to a wafer process, capable of separating a support substrate from the Si thin wafer easily, and capable of reducing the wafer cost. | 08-07-2014 |
20140235032 | METHOD FOR PRODUCING TRANSPARENT SOI WAFER - The method for producing a transparent SOI wafer is provided and includes treating a bonded wafer at a first temperature of 150 to 300° C. as a first heat treatment; cutting off an unbonded portion of the bonded wafer by irradiating a visible light laser from a silicon wafer side of the heated bonded wafer to a boundary between the bonded surface and an unbonded circumferential surface, while keeping an angle of 60 to 90° between the incident light and a radial direction of the silicon wafer; subjecting the silicon wafer of the bonded wafer having the unbonded portion cut off to grinding, polishing, or etching to form a silicon film; and heat-treating the bonded wafer having the silicon film formed at a second temperature of 300 to 500° C. as a second heat treatment which is higher than the first temperature. | 08-21-2014 |
20140242778 | Methods of Forming Strained-Semiconductor-on-Insulator Device Structures - The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. | 08-28-2014 |
20140273399 | METHODS OF FABRICATING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES USING BLANKET FUSION BONDING - A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication. | 09-18-2014 |
20140273400 | RECLAIMING PROCESSING METHOD FOR DELAMINATED WAFER - The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide film is not formed on a delaminated surface of the delaminated wafer and oxide film is formed on a back side which is the opposite side of the delaminated surface. As a result, the reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-product at the time of manufacturing a bonded wafer based on an ion implantation delamination method is subjected to the reclaiming polishing, which enables sufficiently improving quality. | 09-18-2014 |
20140295642 | DOUBLE LAYER TRANSFER METHOD - A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E | 10-02-2014 |
20140308800 | METHOD FOR MANUFACTURING COMPOSITE WAFERS - This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers. | 10-16-2014 |
20140322893 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device with a treated member, includes: subjecting an adhesive support having a substrate and an adhesive layer capable of increasing or decreasing in adhesiveness upon irradiation with an actinic ray, radiation or heat to irradiation of the adhesive layer with an actinic ray, radiation or heat, adhering a first surface of a to-be-treated member to the adhesive layer of the adhesive support, applying a mechanical or chemical treatment to a second surface different from the first surface of the to-be-treated member to obtain a treated member, and detaching a first surface of the treated member from the adhesive layer of the adhesive support, wherein the irradiation of the adhesive layer with an actinic ray, radiation or heat is conducted so that adhesiveness decreases toward an outer surface from an inner surface on the substrate side of the adhesive layer. | 10-30-2014 |
20140322894 | Method for Handling a Thin Substrate and for Substrate Capping - An embodiment is a method for bonding. The method comprises bonding a handle substrate to a capping substrate; thinning the capping substrate; etching the capping substrate; and after the thinning and the etching the capping substrate, bonding the capping substrate to an active substrate. The handle substrate has an opening therethrough. The method also comprises removing the handle substrate from the capping substrate. The removing comprises providing an etchant through the opening to separate the handle substrate from the capping substrate. Other embodiments further include forming a bonding material on a surface of at least one of the handle substrate and the capping substrate such that the capping substrate is bonded to the handle substrate by the bonding material. The bonding material may be removed by using a dry etching to remove the handle substrate from the capping substrate. | 10-30-2014 |
20140322895 | METHOD FOR MANUFACTURING A BONDED SOI WAFER - According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100° C. or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C. or more and 1000° C. or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed. | 10-30-2014 |
20140329370 | LAYER TRANSFER OF SILICON ONTO III-NITRIDE MATERIAL FOR HETEROGENOUS INTEGRATION - An integrated silicon and III-N semiconductor device may be formed by growing III-N semiconductor material on a first silicon substrate having a first orientation. A second silicon substrate with a second, different, orientation has a release layer between a silicon device film and a carrier wafer. The silicon device film is attached to the III-N semiconductor material while the silicon device film is connected to the carrier wafer through the release layer. The carrier wafer is subsequently removed from the silicon device film. A first plurality of components is formed in and/or on the silicon device film. A second plurality of components is formed in and/or on III-N semiconductor material in the exposed region. In an alternate process, a dielectric interlayer may be disposed between the silicon device film and the III-N semiconductor material in the integrated silicon and III-N semiconductor device. | 11-06-2014 |
20140329371 | SOI SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side. | 11-06-2014 |
20140329372 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing a SOI wafer, including a step of performing a thickness reducing adjustment to a SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during the rising of a temperature and/or the falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. The result is a method for manufacturing a SOI wafer that enables manufacturing a SOI wafer that has improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film. | 11-06-2014 |
20140335677 | METHOD FOR SEPARATING EPITAXIAL LAYER FROM GROWTH SUBSTRATE - The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed. | 11-13-2014 |
20140342529 | Semiconductor-on-Insulator Integrated Circuit with Back Side Gate - Methods for manufacturing semiconductor-on-insulator (SOI) integrated circuits are disclosed. An SOI wafer is provided having a first surface and a second surface. The substrate of the SOI wafer forms the second surface. A transistor is formed in the semiconductor layer of the SOI wafer. A handle wafer is bonded to the first surface of the SOI wafer. The substrate layer is then removed to expose a back surface of the buried insulator of the SOI wafer. Conductive material is deposited on the SOI wafer that covers the back surface of the buried insulator. The conductive material is patterned to form a second gate electrode for the transistor on the back surface of the insulator. | 11-20-2014 |
20140357051 | METHOD FOR FORMING RADIO FREQUENCY DEVICE - A method for forming a radio frequency device is provided. The method may include: providing a semiconductor-on-insulator layer, which comprises a back substrate, a buried oxide layer and a top semiconductor layer, where a plurality of transistors and an interlayer dielectric layer covering the plurality of transistors are formed on a surface of the top semiconductor layer; providing a temporary supporting layer having a smooth surface, and adhering a surface of the interlayer dielectric layer to the temporary supporting layer; removing the back substrate to expose the buried oxide; providing a high resistivity substrate, and adhering the high resistivity substrate to the buried oxide layer; and removing the temporary supporting layer to expose the surface of the interlayer dielectric layer after the high resistivity substrate and the buried oxide layer is adhered. Signal loss of the radio frequency devices may be reduced, and signal linearity is improved. | 12-04-2014 |
20140357052 | SUBSTRATE DETERGENT COMPOSITION - The invention provides a substrate detergent composition used for cleaning a surface of a substrate, comprising: (A) A quaternary ammonium salt: 0.1 to 2.0% by mass; (B) Water: 0.1 to 0.4% by mass; and (C) An organic solvent: 94.0 to 99.8% by mass. There can be provided a substrate detergent composition used for cleaning a surface of a substrate contaminated with a silicone component whose water contact angle is 100° or more. | 12-04-2014 |
20140357053 | Method for Preparing Composite Substrate Used For GaN Growth - A method for preparing a composite substrate for GaN growth includes: growing a GaN monocrystal epitaxial layer on a sapphire substrate, bonding the GaN epitaxial layer onto a temporary substrate, lifting off the sapphire substrate, bonding the GaN epitaxial layer on the temporary substrate with a thermally and electrically conducting substrate, shedding the temporary substrate, and obtaining the composite substrate in which the GaN layer having a surface of gallium polarity is bonded to the conducting substrate. If the GaN layer on the sapphire substrate is directly bonded to the conducting substrate, after the sapphire substrate is lifted off, a composite substrate in which a GaN epitaxial layer having a surface of nitrogen polarity is bonded to the conducting substrate. The disclosed composite substrates have homoepitaxy and improved crystal quality; they can be used for forming LED and other devices at greatly reduces costs. | 12-04-2014 |
20140357054 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICES - A semiconductor device can include a first substrate and conductive patterns on the first substrate, where the conductive patterns are disposed in stacks vertically extending from the substrate. An active pillar can be on the first substrate vertically extend from the first substrate throughthe conductive patterns to provide vertical string transistors on the first substrate. A second substrate can be on the conductive patterns and the active pillar opposite the first substrate. A peripheral circuit transistor can be on the second substrate opposite the first substrate, where the peripheral circuit transistor can be adjacent to and overlap an uppermost pattern of the conductive patterns. | 12-04-2014 |
20140363951 | METHOD FOR MANUFACTURING A MULTILAYER STRUCTURE ON A SUBSTRATE - The invention relates to a method for manufacturing a multilayer structure on a first substrate made of a material having a first Young's modulus. The method includes: providing a second substrate covered with the multilayer structure, the multilayer structure having a planar surface opposite the second substrate, the second substrate being made of a material having a second Young's modulus; applying first deformations to said surface; molecularly boding the first substrate to said surface, the molecular bonding resulting in the appearance of second deformation in said surface in the absence of the first deformations, the first deformations being opposite the second deformations; and removing the second substrate, the resulting deformations in said surface being less than 5 ppm. | 12-11-2014 |
20140370687 | CONTROLLED PROCESS AND RESULTING DEVICE - A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film. | 12-18-2014 |
20150017783 | METHOD FOR MANUFACTURING BONDED SOI WAFER - The present invention is directed to a method for manufacturing an SOI wafer in which the bonded SOI wafer after the delamination by the ion implantation delamination method is subjected to a rapid thermal oxidation process such that an oxide film is formed on a surface of the SOI layer, the oxide film is removed, the bonded SOI wafer is then subjected to a flattening heat treatment to flatten the surface of the SOI layer, the flattening heat treatment causing migration of silicon atoms of the surface of the SOI layer, and the bonded SOI wafer is then subjected to a sacrificial oxidation process to adjust a film thickness of the SOI layer. The method enables efficient manufacture of a high quality SOI wafer having an SOI layer with sufficiently reduced surface roughness of the SOI layer surface and fewer deep pits in the SOI layer surface. | 01-15-2015 |
20150024574 | TEMPORARY BONDING ADHESIVE COMPOSITIONS AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane. | 01-22-2015 |
20150031190 | PROCESS FOR THINNING THE ACTIVE SILICON LAYER OF A SUBSTRATE OF "SILICON ON INSULATOR" (SOI) TYPE - The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer, on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness. | 01-29-2015 |
20150037962 | LAMINATED WAFER PROCESSING METHOD - A method of processing a laminated wafer in which a first wafer is laminated on a second wafer, the method including: a laminated wafer forming step of forming the laminated wafer by laminating the first wafer on the second wafer; a modified layer forming step of forming a modified layer within the first wafer by positioning a focusing point of a laser beam within the first wafer and moving the first wafer in a horizontal direction relative to the focusing point while applying the laser beam, the modified layer forming step being performed before or after the laminated wafer forming step is performed; and a separating step of separating part of the first wafer from the laminated wafer with the modified layer as a boundary, the separating step being performed after the laminated wafer forming step and the modified layer forming step are performed. | 02-05-2015 |
20150037963 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF - A method of manufacturing a semiconductor substrate includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer, removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in a solution, forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer, and forming a cavity in a portion of the first semiconductor layer located under where the metallic material layer was removed. | 02-05-2015 |
20150050797 | METHOD OF IMPLANTATION FOR FRAGILIZATION OF SUBSTRATES - The disclosure relates to a method for implantation of atomic or ionic species into a batch of substrates made of semiconductor material, in which: each substrate made of semiconductor material is positioned on a respective support of a batch implanter, each substrate comprising a thin layer of electrical insulator on its surface; and a dose of at least one ionic or atomic species is implanted over the whole surface of the substrates, through their layer of insulator, so as to form a fragilization region within each substrate and to bound there a thin layer of semiconductor material between the thin layer of insulator and the fragilization region of the substrate, the implantation method being characterized in that, during the method, each support on which a substrate is positioned has at least two separate inclinations with respect to the plane orthogonal to the direction of implantation of the species in order to improve the implantation depth of the species in the substrate. The disclosure also relates to structures of the semiconductor-on-insulator type obtained by the implementation of the implantation method. | 02-19-2015 |
20150064875 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer, in which an insulator film is formed at least on all surfaces of a base wafer, and while protecting a first part of the insulator film on a back surface on the opposite side from a bonded surface of the base wafer, a bonded wafer before separating a bond wafer along a layer of the implanted ion is brought into contact with a liquid capable of dissolving the insulator film or exposed to a gas capable of dissolving the insulator film, and a second part of the insulator film interposed between the bond wafer and the base wafer is etched from an outer circumferential edge of the bonded wafer and toward the center of the bonded wafer. The method can control the terrace width and inhibit warping of the SOI wafer in a bonding process with a base wafer. | 03-05-2015 |
20150079759 | Process for Bonding in an Atmosphere of a Gas Having a Negative Joule-Thomson Coefficient - The present invention relates to a process for direct bonding two substrates, comprising at least: (a) bringing the surfaces to be bonded of said substrates in close contact; and (b) propagating a bonding wave between said substrates, characterised in that said substrates are kept, during step (b), in an atmosphere of a gas having a negative Joule-Thomson coefficient at the temperature and pressure of said atmosphere. | 03-19-2015 |
20150093879 | TEMPORARY ADHESIVE FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND ADHESIVE SUPPORT AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - The invention is directed to a temporary adhesive for production of semiconductor device, containing (A) a polymer compound having an acid group, (B) a diluent, and (C) a solvent, an adhesive support including a substrate and an adhesive layer formed from the temporary adhesive for production of semiconductor device, and a production method of semiconductor device having a member processed including: adhering a first surface of a member to be processed to a substrate through an adhesive layer formed from the temporary adhesive for production of semiconductor device as claimed; conducting a mechanical or chemical processing on a second surface which is different from the first surface of the member to be processed to obtain the member processed; and releasing the first surface of the member processed from the adhesive layer. | 04-02-2015 |
20150104926 | METHOD OF MANUFACTURING HIGH RESISTIVITY SOI SUBSTRATE WITH REDUCED INTERFACE CONDUCITIVITY - A method of preparing a high resistivity single crystal semiconductor handle wafer comprising implanting He ions through a front surface of the high resistivity single crystal semiconductor handle wafer, which is followed by an anneal sufficient to form a nanocavity layer in the damage region formed by He ion implantation. The anneal may be prior to or concurrent with thermal oxidation to prepare a front oxidized surface layer. | 04-16-2015 |
20150118825 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer, including performing a plasma activation treatment on at least one of the bonded surfaces of the bond wafer and the base wafer before bonding, wherein the plasma activation treatment is performed while a back surface of at least one of the bond wafer and the base wafer is placed on a stage with the back surface being in point contact or line contact with the stage. The method can inhibit increase in attached substances such as particles on the back surface of a wafer during the plasma activation treatment, and prevent re-attachment of the attached substances to the bonded surface of the wafer, particularly when the wafer after the plasma activation treatment is cleaned with a batch cleaning apparatus. | 04-30-2015 |
20150118826 | METHOD OF GRINDING WAFER STACKS TO PROVIDE UNIFORM RESIDUAL SILICON THICKNESS - A method of processing a device wafer in a wafer stack by chucking the wafer stack device side down and grinding the exposed side of the carrier wafer to parallel with the device wafer, and thereafter flipping the wafer stack and chucking the wafer stack carrier side down and grinding residual silicon from the device wafer. | 04-30-2015 |
20150132922 | ION REDUCED, ION CUT-FORMED THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS (IC) (3DICS), AND RELATED METHODS AND SYSTEMS - Ion-reduced, ion cut-formed three-dimensional (3D) integrated circuits (IC) (3DICs) are disclosed. Related methods and systems are also disclosed. During an ion-cut process for forming a monolithic 3DIC, extra ions are implanted in the donor wafer to effectuate the ion-cut. Excess, residual implanted ions remain implanted in a top layer of the transfer layer of the 3DIC. However, these residual implanted ions can interfere with operation of electronic components in the 3DIC. In this regard, the 3DIC and methods disclosed herein involve reduction or removal of the residual extra ions before further electronic components are created and layered in a 3DIC. In this manner, the extra charge elements introduced by such extra ions are reduced or removed providing for better functionality in the completed device. | 05-14-2015 |
20150140782 | INTEGRATED CIRCUIT ASSEMBLY AND METHOD OF MAKING - An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate. | 05-21-2015 |
20150147869 | THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE FABRICATION INCLUDING WAFER SCALE MEMBRANE - Method and Apparatus so configured for the fabrication of three-dimensional integrated devices. A crystalline substrate within an area of a donor semiconductor wafer is etched. The substrate side is located opposite a device layer and has a buried insulating layer and a substrate thickness. The etching removes at least a substantial portion of the crystalline substrate within the area such that the device layer and the buried insulating layer in the area is to conform to a pattern specific topology on an acceptor surface. The donor semiconductor wafer is supported with a supporting structure that allows the donor semiconductor wafer to flexibly conform to the pattern specific topology within at least a portion of the area after the etching to enable conformality and reliable bonding to the device surfaces of an acceptor wafer to form a three dimensional integrated device. | 05-28-2015 |
20150303098 | METHOD FOR TRANSFERRING A USEFUL LAYER - A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave. | 10-22-2015 |
20150311179 | TRANSISTOR FORMATION USING COLD WELDING - A device and method for fabrication includes providing a first substrate assembly including a first substrate and a first metal layer formed on the first substrate and a second substrate assembly including a second substrate and a second metal layer formed on the second substrate. The first metal layer is joined to the second metal layer using a cold welding process wherein one of the first substrate and the second substrate includes a semiconductor channel layer for forming a transistor device. | 10-29-2015 |
20150318165 | METHOD OF MAKING WAFER ASSEMBLY - A method including bonding a process wafer having integrated circuits and a carrier wafer having at least one alignment mark to form a wafer assembly. The method further includes aligning the wafer assembly using the at least one alignment mark of the carrier wafer. | 11-05-2015 |
20150338643 | PRODUCTION OF MICRO-MECHANICAL DEVICES - A method for fabrication of a device ( | 11-26-2015 |
20150348935 | Method of Temporarily Attaching a Rigid Carrier to a Substrate - Method for temporarily attaching a substrates to a rigid carrier is described which includes forming a sacrificial layer of a thermally-decomposable polymer, e.g., poly(alkylene carbonate), and bonding the flexible substrate to the rigid carrier with the sacrificial layer positioned therebetween. Electronic components and/or circuits may then be fabricated or other semiconductor processing steps employed (e.g., backgrinding) on the attached substrate. Once fabrication is completed, the substrate may be detached from the rigid carrier by heating the assembly to decompose the sacrificial layer. | 12-03-2015 |
20150364364 | METHOD FOR TRASFERRING A LAYER - A method comprising the following steps: providing a support substrate and a donor substrate, forming an embrittlement region in the donor substrate so as to delimit a first portion and a second portion on either side of the embrittlement region, assembling the donor substrate on the support substrate, fracturing the donor substrate along the embrittlement. In addition, the method comprises a step consisting of forming a compressive stress layer in the donor substrate so as to delimit a so-called confinement region interposed between the compressive stress layer and the embrittlement region. | 12-17-2015 |
20160013045 | METHOD AND SYSTEM FOR GALLIUM NITRIDE ELECTRONIC DEVICES USING ENGINEERED SUBSTRATES | 01-14-2016 |
20160035612 | TEMPORARY BONDING LAMINATES FOR USED IN MANUFACTURE OF SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES - Provided is temporary bonding laminates for used in a manufacture of semiconductor devices, by which a member to be processed (a semiconductor wafer or the like) can be temporarily supported securely and readily during a mechanical or chemical process of the member to be processed and then the processed member can be readily released from the temporary support without damaging the processed member even after a high temperature process, and processes for manufacturing semiconductor devices. The temporary bonding laminate includes (A) a release layer and (B) an adhesive layer, wherein the release layer (A) comprises (a1) a first release layer having a softening point of 200° C. or more and adjoining the adhesive layer (B), and (a2) a second release layer adjoining the first release layer (a1); the second release layer (a2) contains a resin; and the resin after curing has a capable of being dissolved at 5% by mass or more, at 25° C., in at least one kind of solvents selected from hexane and the like. | 02-04-2016 |
20160064283 | Method And Device For The Production Of Wafers With A Pre-Defined Break Initiation Point - The present invention relates to a method for the production of layers of solid material ( | 03-03-2016 |
20160079114 | METHOD OF MANUFACTURING BONDED WAFER - The present invention provides a method of manufacturing a bonded wafer, including performing RTA under an atmosphere containing hydrogen on a bonded wafer after separating the bond wafer constituting the bonded wafer, and subsequently performing a sacrificial oxidation process to reduce the thickness of the thin film, wherein the RTA is performed under conditions of a retention start temperature of more than 1150° C. and a retention end temperature of 1150° C. or less. The invention can inhibit the BMD density from increasing and sufficiently flatten the surface of a thin film when the thin film of the bonded wafer is flattened and thinned by the combination of the RTA and sacrificial oxidation processes. | 03-17-2016 |
20160086844 | Method for Manufacturing a Composite Wafer having a Graphite Core, and Composite Wafer having a Graphite Core - A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer. | 03-24-2016 |
20160093522 | WAFER PROCESSING LAMINATE, TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, AND METHOD FOR MANUFACTURING THIN WAFER - A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and back surface to be processed, wherein the temporary adhesive material layer includes a complex temporary adhesive material layer having two-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support. A temporary adhesive material for a wafer processing which withstand a thermal process at high temperature exceeding 300° C., facilitating temporary adhesion and delamination. | 03-31-2016 |
20160141198 | PROCESS FOR TRANSFERRING LAYERS - The invention relates to a process for transferring an active layer to a final substrate using a temporary substrate, the active layer comprises a first side having a three-dimensional surface topology, the process comprising: a first step of bonding the first side of the active layer to one side of the temporary substrate; a second step of bonding a second side of the active layer to the final substrate; and a third step of separating the active layer and the temporary substrate; the process being characterized in that the side of the temporary substrate possesses a surface topology complementary to the surface topology of the first side of the active layer, so that the surface topology of the temporary substrate encapsulates the surface topology of the first side of the active layer in the bonding first step. | 05-19-2016 |
20160197007 | METHOD OF PRODUCING BONDED WAFER | 07-07-2016 |
20160197008 | METHOD FOR MANUFACTURING BONDED WAFER | 07-07-2016 |
20160204024 | METHOD FOR MANUFACTURING BONDED WAFER | 07-14-2016 |
20160254231 | Methods of Making Integrated Circuit Assembly with Faraday Cage | 09-01-2016 |
20160379822 | DIRECT AND PRE-PATTERNED SYNTHESIS OF TWO-DIMENSIONAL HETEROSTRUCTURES - A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon. | 12-29-2016 |
20170236800 | METHOD FOR DIRECT ADHESION VIA LOW-ROUGHNESS METAL LAYERS | 08-17-2017 |
20190148417 | CARRIER RELEASE | 05-16-2019 |