Entries |
Document | Title | Date |
20080206917 | Production of a Radiation Detector - The invention relates to a method of producing a radiation detector comprising a photosensitive receiver ( | 08-28-2008 |
20080206918 | IMAGE SENSOR PACKAGE AND FORMING METHOD OF THE SAME - An image sensor package comprises a substrate, a chip mounted over the substrate. A molding material is formed surrounding the chip to expose a micron lens area, wherein the molding material includes via structure passing there through. A protection layer is formed on the micro lens area to prevent the micro lens. A redistributed conductive layer is formed over the molding material to connect to a pad of the chip. Metal pads are formed on via structure as connecting points with PCB. A cover layer is formed over the substrate to isolate the metal pads. | 08-28-2008 |
20080261346 | SEMICONDUCTOR IMAGE DEVICE PACKAGE WITH DIE RECEIVING THROUGH-HOLE AND METHOD OF THE SAME - The present invention discloses a structure of package comprising: a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad; a die having micro lens area disposed within the die receiving through hole; a transparent cover covers the micro lens area; a surrounding material formed under the die and filled in the gap between the die and sidewall of the die receiving though hole; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the first contact pad; a protection layer formed over the RDL; and a second contact pad formed at the lower surface of the substrate and under the connecting through hole structure. | 10-23-2008 |
20080293179 | Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers - Microelectronic imagers with integrated optical devices and methods for manufacturing imagers. The imagers, for example, typically have an imaging unit including a first substrate and an image sensor on and/or in the first substrate. An embodiment of an optical device includes a stand-off having a compartment configured to contain the image sensor. The stand-off has a coefficient of thermal expansion at least substantially the same as that of the first substrate. The optical device can further include an optics element in alignment with the compartment of the stand-off. The stand-off can be formed by etching a compartment into a silicon wafer or a wafer of another material having a coefficient of thermal expansion at least substantially the same as that of the substrate upon which the image sensor is formed. The optics elements can be formed integrally with the stand-offs or separately attached to a cover supported by the stand-offs. | 11-27-2008 |
20090130791 | CAMERA MODULES AND METHODS OF FABRICATING THE SAME - Provided are camera modules capable of effectively shielding electromagnetic (EM) waves and methods of fabricating the same. A method of fabricating a camera module includes, preparing a first wafer including an array of lens units. Then, a second wafer including an array of image sensor CSPs (chip-scale packages) is prepared. Each of the image sensor CSPs includes an image sensor chip corresponding to one of the lens units. The first wafer is stacked on the second wafer. The first wafer and the second wafer are cut to form a trench exposing the top surface of the image sensor chip at the interface between adjacent lens units. The trench is filled with a first material used for forming a housing. The first material and the image sensor chip are cut at the interface between the adjacent lens units. | 05-21-2009 |
20090155949 | MICROELECTRONIC IMAGERS WITH OPTICAL DEVICES AND METHODS OF MANUFACTURING SUCH MICROELECTRONIC IMAGERS - Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports. | 06-18-2009 |
20090170233 | METHOD FOR FABRICATING CMOS IMAGE SENSOR - A method for fabricating a CMOS image sensor for preventing corrosion of a metal pad. The method for fabricating the CMOS image sensor can include sequentially forming a dielectric film, a metal pad having an opening, and a first passivation film on a semiconductor substrate having a scribe lane and a pixel region defined therein, forming a color filter layer on the first passivation film at the pixel region, forming an overcoat layer on the entire surface of the semiconductor substrate, including the metal pad, to reduce the step difference between the scribe lane and the pixel region, forming a micro lens on the overcoat layer at the pixel region, forming a photo resist to expose the overcoat layer at the scribe lane, performing an etching process on the entire surface of the semiconductor substrate to etch the overcoat layer at the scribe lane, and removing the photo resist by a cleaning process. | 07-02-2009 |
20090215216 | Packaging method of image sensing device - A packaging method for an image sensing device is disclosed. The packaging method includes the steps of a) mounting an image sensing module, having a light-receiving region exposed, on a substrate; b) connecting the image sensing module and the substrate via a plurality of bonding wires; c) forming a protecting layer on the light-receiving region of the image sensing module; d) forming a molding layer to seal the plurality of bonding wires; e) flattening the protecting layer and the molding layer; f) removing the protecting layer to expose the light-receiving region of the image sensing module; and g) forming a transparent lid. | 08-27-2009 |
20090221111 | METHOD AND APPARATUS FOR FABRICATING COMPOSITE SUBSTRATES FOR THIN FILM ELECTRO-OPTICAL DEVICES - A method is provided for producing an electro-optic device having at least one optically transparent conducting layer with low electrical resistance. The method includes providing a composite substrate that includes an optically transparent and electrically insulating base substrate and an electrically conducting grid disposed in grooves located in the base substrate. Also provided is an electro-optical module having at least one transparent conducting layer. The composite substrate is attached onto the electro-optic module such that electrical contact is established between the grid and the transparent conducting layer of the electro-optic module. | 09-03-2009 |
20090246905 | ELECTRO-OPTIC INTEGRATED CIRCUITS AND METHODS FOR THE PRODUCTION THEREOF - An electro-optic integrated circuit including an integrated circuit substrate at least one optical signal providing element and at least one discrete reflecting optical element mounted onto the integrated circuit substrate, cooperating with the at least one optical signal providing element and being operative to direct light from the at least one optical signal providing element. An electro-optic integrated circuit including an integrated circuit substrate, at least one optical signal receiving element and at least one discrete reflecting optical element mounted onto the integrated circuit substrate and cooperating with the at least one optical signal receiving element and being operative to direct light to the at least one optical signal receiving element. | 10-01-2009 |
20090253226 | Camera module and method of fabricating the same - Example embodiments may provide a camera module including a high-resolution lens member and/or an image sensor chip that may be integrally formed, and a method of fabricating a camera module. Example embodiment camera modules may include a semiconductor package including an image sensor chip. A transparent substrate may include an upper plate portion and/or a supporting portion defined by a cavity under the upper plate portion, and the supporting portion may be attached on the semiconductor package. The upper plate portion may be spaced from the semiconductor package by the supporting portion. A lens member may be attached to the upper plate portion of the transparent substrate. A stop member may be formed on a top side of the transparent substrate and may expose a portion of the lens member. | 10-08-2009 |
20090286346 | Methods For Forming Anti-Reflection Structures For CMOS Image Sensors - Protuberances, having vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode, are formed at an optical interface between two layers having different refractive indices. The protuberances may be formed by employing self-assembling block copolymers that form an array of sublithographic features of a first polymeric block component within a matrix of a second polymeric block component. The pattern of the polymeric block component is transferred into a first optical layer to form an array of nanoscale protuberances. Alternately, conventional lithography may be employed to form protuberances having dimensions less than the wavelength of light. A second optical layer is formed directly on the protuberances of the first optical layer. The interface between the first and second optical layers has a graded refractive index, and provides high transmission of light with little reflection. | 11-19-2009 |
20090298218 | LEAD FRAME THERMOPLASTIC SOLAR CELL RECEIVER - A lead frame thermoplastic package for a solar cell, and a method of manufacturing the same. The lead frame being either a single-lead frame design or a dual-lead frame design. The single-lead frame design being made up of a single-lead metal frame. The dual-lead frame design being made up of a die pad lead frame, a wire bond lead frame, and being encapsulated in a thermoplastic resin. Optionally, the single lead frame or at least one of the dual-lead frames is coated with a dielectric material. The lead frame providing connections for a semiconductor die, a diode, and the associated electrical connections. The lead frame also providing a large surface area metal pad for cooling, and mounting tabs for securing various optics systems to the package. Optionally, the lead frame is incorporated into a solar cell including the lead frame, a semiconductor die, a diode, an optics system, and an integrated electrical connection system. | 12-03-2009 |
20090305451 | MANUFACTURING METHOD OF WAFER LEVEL CHIP SCALE PACAKGE OF IMAGE-SENSING MODULE - A manufacturing method of a wafer level chip scale package of an image-sensing module is provided. The method includes providing. a wafer having a plurality of die regions, and a plurality of sensing units is formed on a surface of the wafer in each die region. A plurality of lens units is formed on the sensing units, wherein each lens unit includes a lens and an edge wall that are integrally formed. A light-shielding film is also formed on a surface of at least one edge wall of at least one lens units. A dicing process is then performed on the wafer to form a plurality of image sensor chips. | 12-10-2009 |
20100047955 | Interconnection system for photovoltaic modules - Methods for forming series-interconnected solar cells that use metal foils as substrates are provided. In an embodiment of the invention, a metallic substrate-type solar cell having the following structure is provided: a metal substrate, a semiconductor, and a transparent conducting front contact. In another embodiment of the invention, optional current collecting grids may be provided. An insulating carrier material layer may be provided bonded to the metal substrate. | 02-25-2010 |
20100062559 | Methods of manufacturing image sensors having shielding members - An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon. | 03-11-2010 |
20100068846 | Package structure and fabrication method thereof - A package structure and fabrication method thereof. The structure includes a substrate having a terminal, a chip overlying the substrate, the chip having an active surface, having a center region and periphery region, the periphery region having an electrode thereon, a patterned cover plate overlying the chip and exposing the electrode, a conductive material electrically connecting the electrode and terminal, and an encapsulant covering the terminal, conductive material, and electrode, but exposing the cover plate overlying the center region of the chip. | 03-18-2010 |
20100112746 | PHOTOELECTRIC SENSOR HOUSING ASSEMBLING METHOD AND PHOTOELECTRIC SENSOR - A housing assembly method for bonding through causing a first member and a second member, which form a tightly sealed housing that contains a sensing element, to be mutually abutting. A first resin material through which a laser beam passes is used as the first member and a second resin material that absorbs the laser beam is used as the member of the second piece. With the bonding surfaces of these members abutting each other, a laser beam having a diameter that is smaller than the width of the bonding surfaces is directed towards the bonding surfaces from the member of the first piece side to weld the bonding surfaces together while leaving non-welded portions between the abutting bonding surfaces. | 05-06-2010 |
20100129954 | PHOTOGRAPHIC MODULES AND METHODS OF FORMING THE SAME - Methods of forming camera modules include forming a chip structure including a molding pattern surrounding a chip and sidewalls of the chip. A lens module is formed, and the lens module is coupled to an upper part of the chip structure. | 05-27-2010 |
20100151614 | WAFER LEVEL METHOD OF FORMING SIDE FIBER INSERTION OPTOELECTRONIC PACKAGES - Optoelectronic packages and wafer level techniques for forming optoelectronic packages are described. In accordance with one apparatus aspect of the invention, a pair of substrates are bonded together to form an optical coupler. A first one of the substrates has a recess that faces the second substrate to at least in part define a channel suitable for receiving an optical transmission medium. A photonic device is mounted on a mounting surface of the second substrate that is opposite its bonded surface. The photonic device faces the reflective surface and an optical path is formed between the channel and the photonic element that both reflects off of the reflective surface and passes through the second substrate. In some embodiments an integrated circuit device and/or solder bumps are also attached to the mounting surface and the second substrate has conductive traces thereon that electrically couple the various electrical components as appropriate (e.g., the photonic device, the integrated circuit device, the solder bumps and/or other components). The substrates may be formed from a wide variety of materials including, glass, plastic and silicon. In some embodiments, at least the second substrate is formed from an optically transparent material and the optical path passes directly though the optically transparent material. In a method aspect of the invention, a variety of wafer level methods for forming such devices are described. | 06-17-2010 |
20100151615 | METHODS FOR FABRICATING IMAGE SENSOR DEVICES - Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer. | 06-17-2010 |
20100167452 | METHOD FOR MANUFACTURING BACK SIDE ILLUMINATION IMAGE SENSOR - A method of manufacturing a back side illumination image sensor is provided. The method can include forming an ion implantation layer in a front side of a first substrate, forming a photodetector and a readout circuit on the first substrate, forming an interlayer dielectric layer and a metal line on the front side of the first substrate, bonding a second substrate with the front side of the first substrate, removing a lower portion of the first substrate on the basis of the ion implantation layer, performing an annealing process with respect on a back side of the first substrate, and forming a microlens over the photodetector. | 07-01-2010 |
20100167453 | Methods of forming an image sensor - Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer. | 07-01-2010 |
20100178722 | METHODS AND APPLICATIONS OF NON-PLANAR IMAGING ARRAYS - System, devices and methods are presented that provide an imaging array fabrication process method, comprising fabricating an array of semiconductor imaging elements, interconnecting the elements with stretchable interconnections, and transfer printing the array with a pre-strained elastomeric stamp to a secondary non-planar surface. | 07-15-2010 |
20100184247 | Semiconductor Chip Having a Photodiode, Semiconductor Device and Manufacturing Method Thereof - A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region | 07-22-2010 |
20100190287 | SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height. | 07-29-2010 |
20100221862 | IMAGING OPTICAL MODULE DESIGNED TO BE ASSOCIATED WITH AN OPTICAL SEMICONDUCTOR COMPONENT AND METHOD OF FABRICATING SAME - An imaging optical module is designed to be placed in front of an optical image sensor of a semiconductor component. The module includes at least one element which has a refractive index that varies between its optical axis and its periphery, over at least an annular part and/or over its central part. The element may be a tablet in front of the semiconductor sensor or a lens in front of the semiconductor sensor. The direction of variation in refractive index may be oppositely oriented with respect to the table and lens. | 09-02-2010 |
20100240168 | PORTABLE OPTICAL DETECTION CHIP AND MANUFACTURING METHOD THEREOF - A portable optical detection chip comprises a substrate, a plurality of avalanche-type photosensitive device modules and a plurality of plane mirrors. The plurality of avalanche-type photosensitive device modules are formed on the substrate, and each of them comprises a plurality of avalanche-type photosensitive devices and a plurality of lenses. Each of the lenses is stacked on one of the avalanche-type photosensitive devices. The plurality of plane mirrors are disposed between the avalanche-type photosensitive device modules. That is, the avalanche-type photosensitive device modules are separated from each other by the plane mirrors. | 09-23-2010 |
20100248412 | ACTIVE PIXEL SENSOR HAVING TWO WAFERS - A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer. | 09-30-2010 |
20100297799 | IMAGE CAPTURE UNIT - An image capture unit and its manufacturing method. The image capture unit includes a thinned-down integrated circuit chip having an image sensor on its upper surface side. A wall extends above a peripheral upper surface ring-shaped area, and a lens rests on the high portion of the wall. | 11-25-2010 |
20100323469 | METHODS FOR SEPARATING INDIVIDUAL SEMICONDUCTOR DEVICES FROM A CARRIER - A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be reduced using a series of grinding operations. After grinding, backside processing operations may be performed to form scribe channels that separate the die from each other and to form through-wafer vias. The scribe channels may be formed by dry etching and may have rectangular shapes, circular shapes, or other shapes. A pick and place tool may have a heated head. The bonding layer material may be based on a thermoplastic or other material that can be released by application of heat by the heated head of the pick and place tool. The pick and place tool may individually debond each of the integrated circuits from the carrier wafer and may mount the debonded circuits in packages. | 12-23-2010 |
20100330726 | Photovoltaic module with light reflecting backskin - A photovoltaic module comprises electrically interconnected and mutually spaced photovoltaic cells that are encapsulated by a light-transmitting encapsulant between a light-transparent front cover and a back cover, with the back cover sheet being an ionomer/nylon alloy embossed with V-shaped grooves running in at least two directions and coated with a light reflecting medium so as to provide light-reflecting facets that are aligned with the spaces between adjacent cells and oriented so as to reflect light falling in those spaces back toward said transparent front cover for further internal reflection onto the solar cells, whereby substantially all of the reflected light will be internally reflected from said cover sheet back to the photovoltaic cells, thereby increasing the current output of the module. The internal reflector improves power output by as much as 67%. | 12-30-2010 |
20110086461 | METHOD FOR MAKING AN OPTICAL DEVICE WITH INTEGRATED OPTOELECTRONIC COMPONENTS - A method for making an optical device with integrated optoelectronic components, including a) making a protective structure including a support in which at least one blind hole is made, an optical element being positioned in the blind hole, b) attaching the support to a substrate including the integrated optoelectronic components, the blind hole forming a cavity in which the optical element faces one of the optoelectronic components, c) achieving thinning of the substrate and making electric connections through the substrate, and d) making an aperture through the bottom wall of the blind hole, uncovering at least one portion of the optical field of the optical element. | 04-14-2011 |
20110165722 | METHOD FOR FORMING STRUCTURE FOR REDUCING NOISE IN CMOS IMAGE SENSORS - A method and device is disclosed for reducing noise in CMOS image sensors. An improved CMOS image sensor includes a light sensing structure surrounded by a support feature section. An active section of the light sensing structure is covered by no more than optically transparent materials. A light blocking portion includes a black light filter layer and an opaque layer covering the support feature section. The light blocking portion may also cover a peripheral portion of the light sensing structure. The method for forming the CMOS image sensors includes using film patterning and etching processes to selectively form the opaque layer where the light blocking portion is desired but not over the active section. | 07-07-2011 |
20110223705 | PROCESS FOR ASSEMBLING CAMERA MODULE - A process for assembling a camera module is provided. Firstly, a first conductive bump and a second conductive bump are placed on a signal terminal of a substrate and a contact pad of an image sensing chip, respectively. Then, the substrate and the image sensing chip are laminated, so that the first conductive bump and the second conductive bump are combined together and the signal terminal of the substrate and the contact pad of the image sensing chip are electrically connected with each other. Then, an underfill is applied to a region between the substrate and the image sensing chip. Since the two conductive bumps are connected with each other by the assembling process, the quality of the camera module of the present invention is enhanced. | 09-15-2011 |
20110263066 | Patterned glass cylindrical lens arrays for concentrated photovoltaic systems, and/or methods of making the same - Certain example embodiments of this invention relate to patterned glass that can be used as a cylindrical lens array in a concentrated photovoltaic application, and/or methods of making the same. In certain example embodiments, the lens arrays may be used in combination with strip solar cells and/or single-axis tracking systems. That is, in certain example embodiments, lenses in the lens array may be arranged so as to concentrate incident light onto respective strip solar cells, and the entire assembly may be connected to a single-axis tracking system that is programmed to follow the East-West movement of the sun. A low-iron glass may be used in connection with certain example embodiments. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments. | 10-27-2011 |
20110263067 | Methods of Forming a Concentrating Photovoltaic Module - Solar cell modules for converting solar energy into electrical energy. The modules includes a housing formed from three separate members that are attached together to form an interior space. A top member extends across an open side of the housing and includes one or more lenses. One or more solar cell receivers are positioned within the interior space of the house and are aligned with one or more of the lenses to receive and convert the solar energy into electrical energy. | 10-27-2011 |
20120009716 | PACKAGE PROCESS OF BACKSIDE ILLUMINATION IMAGE SENSOR - In a package process of backside illumination image sensor, a wafer including a plurality of pads is provided. A first carrier is processed to form a plurality of blind vias therein. The first carrier is adhered to the wafer so that the blind vias face to the pads correspondingly. A spacing layer is formed and a plurality of sensing components are disposed. A second carrier is adhered on the spacing layer. Subsequently, a carrier thinning process is performed so that the blind vias become the through holes. An insulating layer is formed on the first carrier. An electrically conductive layer is formed on the insulating layer and filled in the though holes to electrically connect to the pads. The package process can achieve the exact alignment of the through holes and the pads, thereby increasing the package efficiency and improving the package quality. | 01-12-2012 |
20120021554 | METHOD OF FORMATION OF NANOWIRES AND METHOD OF MANUFACTURE OF ASSOCIATED OPTICAL COMPONENT - A method of formation of nanowires at a surface of a substrate attached to a solid immersion lens. The method includes formation of a catalyst element at the surface of the substrate and growth of nanowires from the catalyst element formed at the surface of the substrate. The catalyst element is a metal nanoparticle and the formation of the catalyst element at the surface of the substrate deposits the metal nanoparticle using a light beam focused by the solid immersion lens at the surface of the substrate. | 01-26-2012 |
20120094421 | METHOD OF MANUFACTURING SOLAR CELL - In a method of manufacturing a solar cell, an emitter layer is formed on a front surface of a substrate, a rear surface protective layer is formed on the emitter layer, and a plurality of recesses is formed in the rear surface protective layer. Then, a front electrode is formed on the emitter layer, and a rear surface electrode layer is formed on the rear surface protective layer. A substrate is heated to form a rear surface electric field layer. Since a portion of the rear surface protective layer is removed when the recesses are formed, the substrate may be prevented from being damaged, and thus photoelectric conversion efficiency of the solar cell may be improved. | 04-19-2012 |
20120135559 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a solid-state imaging device including: forming photo sensor portions in a silicon substrate; forming a wiring portion above said silicon substrate; bonding another substrate onto said wiring portion; removing said substrate in response to performing the bonding of the another substrate onto the wiring portion; and sequentially forming an anti-reflective coating on the silicon substrate, a color filter on the anti-reflective coating, and an on-chip lens. | 05-31-2012 |
20120156823 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth. | 06-21-2012 |
20120171803 | REVERSE IMAGE SENSOR MODULE AND METHOD FOR MANUFACTURING THE SAME - A reverse image sensor module includes first and second semiconductor chips, and first and second insulation layers. The first semiconductor chip includes a first semiconductor chip body having a first surface and a second surface facing away from the first surface, photodiodes disposed on the first surface, and a wiring layer disposed on the second surface and having wiring lines electrically connected to the photodiodes and bonding pads electrically connected to the wiring lines. The second semiconductor chip includes a second semiconductor chip body having a third surface facing the wiring layer, and through-electrodes electrically connected to the bonding pads and passing through the second semiconductor chip body. The first insulation layer is disposed on the wiring layer, and the second insulation layer is disposed on the third surface of the second semiconductor chip body facing the first insulation layer and is joined to the first insulation layer. | 07-05-2012 |
20120220065 | METHOD FOR REDUCING TILT OF TRANSPARENT WINDOW DURING MANUFACTURING OF IMAGE SENSOR - The present invention discloses a method for reducing the tilt of a transparent window during manufacturing of an image sensor. The method includes the following steps: providing a semimanufacture of the image sensor; carrying out a preheating process; carrying out an adhesive spreading process; carrying out a transparent window closing process; and carrying out a packaging process. By carrying out the preheating process, the environmental conditions can be stabilized during the adhesive spreading process and the transparent window closing process such that the transparent window can be kept highly flat after combining By the implementation of the present invention, the chance of tilt and crack of the transparent window during manufacturing of the image sensor can be reduced, thereby achieving the goal for a better yield rate. | 08-30-2012 |
20120225514 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component. | 09-06-2012 |
20120264251 | SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. | 10-18-2012 |
20120295388 | LARGE AREA CONCENTRATOR LENS STRUCTURE AND METHOD - A solar module includes a substrate member, a plurality of photovoltaic strips arranged in an array configuration overlying the substrate member, and a concentrator structure comprising extruded glass material operably coupled to the plurality of photovoltaic strips. A plurality of elongated convex regions are configured within the concentrator structure. The plurality of elongated convex regions are respectively coupled to the plurality of photovoltaic strips. Each of the plurality of elongated convex regions includes a length and a convex surface region characterized by a radius of curvature, each of the elongated convex regions being configured to have a magnification ranging from about 1.5 to about 5. A coating material rendering the glass self-cleaning overlies the plurality of elongated convex regions. | 11-22-2012 |
20120329198 | METHOD FOR PRODUCING AN INFRARED LIGHT DETECTOR - A method for producing an infrared light detector ( | 12-27-2012 |
20130045560 | TECHNIQUES AND SYSTEMS FOR FABRICATING ANTI-REFLECTIVE AND PASSIVATION LAYERS ON SOLAR CELLS - The present invention is directed to techniques for fabricating solar cells that feature annealing of a substrate and subsequent formation of a combination passivation and antireflective layer in superimposition with a p-n junction formed on the substrate by introductions of impurities. It was determined that the time and cost for manufacture may be reduced by annealing the substrate before formation of the combination layer and maintaining the temperature proximate to the annealing temperature. To that end, upon completion of the anneal process the temperature of the substrate is maintained within an acceptable temperature range to reduce the time required for the substrate to reach temperature for formation of the combination layer. The combination layer is then formed without undue delay using plasma deposition processes. | 02-21-2013 |
20130065348 | PACKAGE PROCESS OF BACKSIDE ILLUMINATION IMAGE SENSOR - In a package process of backside illumination image sensor, a wafer including a plurality of pads is provided. A first carrier is processed to form a plurality of blind vias therein. The first carrier is adhered to the wafer so that the blind vias face to the pads correspondingly. A spacing layer is formed and a plurality of sensing components are disposed. A second carrier is adhered on the spacing layer. Subsequently, a carrier thinning process is performed so that the blind vias become the through holes. An insulating layer is formed on the first carrier. An electrically conductive layer is formed on the insulating layer and filled in the though holes to electrically connect to the pads. The package process can achieve the exact alignment of the through holes and the pads, thereby increasing the package efficiency and improving the package quality. | 03-14-2013 |
20130149805 | METHOD FOR REDUCING TILT OF OPTICAL UNIT DURING MANUFACTURE OF IMAGE SENSOR - A method for reducing the tilt of an optical unit during manufacture of an image sensor includes the steps of: providing a semimanufacture of the image sensor, carrying out a preheating process, carrying out an adhesive application process, carrying out an optical unit mounting process, and carrying out a packaging process. Due to the preheating process, the semimanufacture will be subjected to a stabilized process environment during the adhesive application process and the optical unit mounting process, so as for the optical unit to remain highly flat once attached to the semimanufacture. The method reduces the chances of tilt and crack of the optical unit and thereby contributes to a high yield rate. | 06-13-2013 |
20130171758 | METHOD FOR MAKING SOLAR CELL AND SOLAR CELL SYSTEM - A solar cell making method includes steps of making a round P-N junction preform by (a) stacking a P-type silicon layer and a N-type silicon layer on top of each other, and (b) forming a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer, wherein the round P-N junction preform defines a first surface and a second surface; forming a first electrode preform on the first surface and forming a second electrode preform on the second surface, thereby forming a round solar cell perform; and forming a photoreceptive surface with the P-N junction exposed on the photoreceptive surface by cutting the round solar cell preform into a plurality of arc shaped solar cells, the photoreceptive surface being on a curved surface of the arc shaped solar cell and being configured to receive incident light beams. | 07-04-2013 |
20130183787 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - In method of manufacturing a light emitting device, a substrate is provided, and metallization is established on an upper surface of the substrate. A light emitting element is mounted on top of the metallization, and the metallization and light emitting element are electrically connected. The surfaces of metallization and at least side surface of the light emitting element are continuously covered with insulating material. Light reflective resin is provided over the insulating material at a position surrounding the light emitting element to reflect light from the light emitting element. | 07-18-2013 |
20130237002 | METHOD AND APPARATUS PROVIDING COMBINED SPACER AND OPTICAL LENS ELEMENT - A method and apparatus used for forming a lens and spacer combination, and imager module employing the spacer and lens combination. The apparatus includes a mold having a base, spacer section, and mold feature. The method includes using the mold with a blank to create a spacer that includes an integral lens. The spacer and lens combination and imager modules can be formed on a wafer level. | 09-12-2013 |
20130252368 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - According to an embodiment, a chip package is provided, which includes: a substrate having a first surface and a second surface; a device region formed in the substrate; a passivation layer formed overlying the first surface of the substrate; at least a polymer planarization layer formed overlying the passivation layer; a package substrate disposed overlying the first surface of the substrate; and a spacer layer disposed between the package substrate and the passivation layer, wherein the spacer layer and the package substrate surround a cavity overlying the substrate, wherein the polymer planar layer does not extends to an outer edge of the spacer layer. | 09-26-2013 |
20130309801 | WAFER-LEVEL PROCESS FOR FABRICATING PHOTOELECTRIC MODULES - A wafer-level process for fabricating a plurality of photoelectric modules is provided. The wafer-level process includes at least following procedures. Firstly, a wafer including a plurality of chips arranged in an array is provided. Next, a plurality of photoelectric devices are mounted on the chips. Next, a cover plate including a plurality of covering units arranged in an array is provided. Next, a plurality of light guiding mediums are formed over the cover plate. Next, the cover plate is bonded with the wafer by an adhesive, wherein each of the covering units covers and bonds with one of the chips, and the light guiding mediums are sandwiched between the cover plate and the wafer. Then, the wafer and the cover plate are diced to obtain the plurality of photoelectric modules. | 11-21-2013 |
20140038337 | BACKSIDE ILLUMINATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - Disclosed is a backside illuminated image sensor including a light receiving element formed in a first substrate, an interlayer insulation layer formed on the first substrate including the light receiving element, a via hole formed through the interlayer insulation layer and the first substrate while being spaced apart from the light receiving element, a spacer formed on an inner sidewall of the via hole, an alignment key to fill the via hole, interconnection layers formed on the interlayer insulation layer in a multilayer structure in which a backside of a lowermost layer of the interconnection layers is connected to the alignment key, a passivation layer covering the interconnection layers, a pad locally formed on a backside of the first substrate and connected to a backside of the alignment key, and a color filter and a microlens formed on the backside of the first substrate corresponding to the light receiving element. | 02-06-2014 |
20140045292 | METHOD OF MANUFACTURING IMAGE PICKUP DEVICE - A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings. | 02-13-2014 |
20140065755 | Method Of Making A Low Stress Cavity Package For Back Side Illuminated Image Sensor - An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the first surface. A compliant dielectric material is disposed in the cavity. The image sensor front surface is attached to the crystalline substrate handler second surface. A plurality of electrical interconnects each include a hole aligned with one of the contact pads, with a first portion extending from the second surface to the cavity and a second portion extending through the compliant dielectric material, a layer of insulation material formed along a sidewall of the first portion of the hole, and conductive material extending through the first and second portions of the hole and electrically coupled to the one contact pad. | 03-06-2014 |
20140065756 | Sidewall for Backside Illuminated Image Sensor Metal Grid and Method of Manufacturing Same - The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature. | 03-06-2014 |
20140080245 | METHOD FOR FABRICATING OPTICAL MICRO STRUCTURE AND APPLICATIONS THEREOF - A method for fabricating an image sensor, wherein the method comprises steps as follows: Firstly, a transparent substrate is formed on a working substrate. Pluralities of micro lens are formed in the transparent substrate, wherein the lenses have a refraction ratio differing from that of the transparent substrate. Subsequently, a color filter is formed on the lenses. Afterward, the color filter is engaged with an image sensing device by flipping around the working substrate. | 03-20-2014 |
20140154830 | IMAGE SENSOR CHIP PACKAGE AND METHOD FOR FORMING THE SAME - A method for forming an image sensor chip package includes: providing a substrate having predetermined scribe lines defined thereon, wherein the predetermined scribe lines define device regions and each of the device regions has at least a device formed therein; disposing a support substrate on a first surface of the substrate; forming at least a spacer layer between the support substrate and the substrate, wherein the spacer layer covers the predetermined scribe lines; forming a package layer on a second surface of the substrate; forming conducting structures on the second surface of the substrate, wherein the conducting structures are electrically connected to the corresponding device in corresponding one of the device regions, respectively; and dicing along the predetermined scribe lines such that the support substrate is removed from the substrate and the substrate is separated into a plurality of individual image sensor chip packages. | 06-05-2014 |
20140170796 | IMAGE SENSOR PACKAGING METHOD - A image sensor packaging method includes the steps of: a) installing an image sensor chip in a circuit substrate and then covering a light transmissive cover on the image sensor chip over a sensing zone of the image sensor chip and then covering a passivation layer on the light transmissive cover, b) using a plurality of lead wires to connect respective conducting contacts of the circuit substrate to respective conducting contacts of the image sensor chip, c) molding an encapsulation on the circuit substrate and the image sensor chip to wrap the lead wires, and d) removing the passivation layer. | 06-19-2014 |
20140170797 | SENSOR CHIP PROTECTIVE IMAGE SENSOR PACKAGING METHOD - A sensor chip protective image sensor packaging method includes the steps of a) installing an image sensor chip in a circuit substrate and then covering a passivation layer on a sensing zone of the image sensor chip, b) using a plurality of lead wires to connect respective conducting contacts of the circuit substrate to respective conducting contacts of the image sensor chip, c) molding an encapsulation on the circuit substrate and the image sensor chip to wrap the lead wires, d) removing the passivation layer, and e) mounting a light transmissive cover in the encapsulation over the sensing zone of the image sensor chip. Thus, the passivation layer protects the sensing zone of the image sensor chip against contamination and damage prior before having been protected by the cover, and therefore, this image sensor chip packaging method has high-yield performance. | 06-19-2014 |
20140193940 | Method and Apparatus for Image Sensor Packaging - Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together. | 07-10-2014 |
20140199800 | LUMINESCENT MATERIALS THAT EMIT LIGHT IN THE VISIBLE RANGE OR THE NEAR INFRARED RANGE AND METHODS OF FORMING THEREOF - Luminescent materials and methods of forming such materials are described herein. A method of forming a luminescent material includes: (1) providing a source of A and X, wherein A is selected from at least one of elements of Group 1, and X is selected from at least one of elements of Group 17; (2) providing a source of B, wherein B is selected from at least one of elements of Group 14; (3) subjecting the source of A and X and the source of B to vacuum deposition to form a precursor layer over a substrate; (4) forming an encapsulation layer over the precursor layer to form an assembly of layers; and (5) heating the assembly of layers to a temperature T | 07-17-2014 |
20140213009 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component. | 07-31-2014 |
20140248736 | Method Of Forming A Low Profile Image Sensor Package - An image sensor package, and method of making same, that includes a printed circuit board having a first substrate with an aperture extending therethrough, one or more circuit layers, and a plurality of first contact pads electrically coupled to the one or more circuit layers. A sensor chip mounted to the printed circuit board and disposed at least partially in the aperture. The sensor chip includes a second substrate, a plurality of photo detectors formed on or in the second substrate, and a plurality of second contact pads formed at the surface of the second substrate which are electrically coupled to the photo detectors. Electrical connectors each electrically connect one of the first contact pads and one of the second contact pads. A lens module is mounted to the printed circuit board and has one or more lenses disposed for focusing light onto the photo detectors. | 09-04-2014 |
20140256079 | PRODUCTION METHOD FOR SPECTROSCOPIC SENSOR - A method for manufacturing a spectroscopic sensor | 09-11-2014 |
20140308772 | Vertically Integrated Image Sensor Chips and Methods for Forming the Same - A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a first integrated circuit device in the BSI image sensor chip, forming a second via penetrating through the BSI image sensor chip to connect to a second integrated circuit device in the device chip, and forming a metal pad to connect the first via to the second via. | 10-16-2014 |
20150011037 | CONVERTER PLATE, A RADIATION-EMITTING DEVICE HAVING SUCH A CONVERTER PLATE AND A METHOD OF PRODUCING SUCH A CONVERTER PLATE - A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed. | 01-08-2015 |
20150056738 | METHOD FOR MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor is provided. The method includes forming a photodiode in a pixel area in a first substrate and forming an insulating layer and a metal wire; forming a color filter layer and a microlens on the insulating layer; attaching a cover glass for the microlens to the insulating layer; back-grinding the first substrate to decrease its thickness; forming a via in the first substrate electrically coupled to the metal wire; forming a first microbump on the via; and forming a second microbump on a logic area of a second substrate; and coupling the first and the second microbumps to electrically couple the pixel area to the logic area. | 02-26-2015 |
20150056739 | IMAGE SENSOR TRENCH ISOLATION WITH CONFORMAL DOPING - Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner. | 02-26-2015 |
20150064832 | Elevated Photodiode with a Stacked Scheme - A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode. | 03-05-2015 |
20150064833 | Connector of connecting light sensor and substrate and method of fabricating light sensor - A connector of connecting a light sensor and a substrate is utilized for rotating the light sensor so that the light-receiving direction of the light sensor is parallel with the substrate. When the connector is utilized in an optical touch system, the light sensor can be disposed on the substrate of the optical touch system by means of general manufacturing facilities of flat display panels. Meanwhile, the light-receiving direction of the light sensor is parallel with the substrate of the optical touch system. | 03-05-2015 |
20150072462 | TANDEM NANOFILM PHOTOVOLTAIC CELLS JOINED BY WAFER BONDING - An energy conversion device comprises at least two thin film photovoltaic cells fabricated separately and joined by wafer bonding. The cells are arranged in a hierarchical stack of decreasing order of their energy bandgap from top to bottom. Each of the thin film cells has a thickness in the range from about 0.5 μm to about 10 μm. The photovoltaic cell stack is mounted upon a thick substrate composed of a material selected from silicon, glass, quartz, silica, alumina, ceramic, metal, graphite, and plastic. Each of the interfaces between the cells comprises a structure selected from a tunnel junction, a heterojunction, a transparent conducting oxide, and an alloying metal grid; and the top surface and/or the lower surface of the energy conversion device may contain light-trapping means. | 03-12-2015 |
20150087101 | METHOD FOR FORMING SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the wafer, in which the plurality of through silicon vias is electrically connected to the plurality of sensing arrays. A filter layer is formed on the plurality of sensing arrays after the plurality of through silicon vias is formed. A cover plate is attached to the front side of the wafer to cover the filter layer. | 03-26-2015 |
20150087102 | Surface Treatment for BSI Image Sensors - A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process. | 03-26-2015 |
20150099323 | METHOD OF MANUFACTURING SOLAR CELL MODULE AND SOLAR CELL MODULE - A stack is obtained by stacking a glass plate, a first transparent resin sheet, a solar cell, a second transparent resin sheet, a colored resin sheet, and a first resin sheet. The stack is pressed under heat to fabricate a module including the glass plate, a first transparent bonding layer placed between the glass plate and the solar cell and formed of the first transparent resin sheet, a second transparent bonding layer placed between the first resin sheet and the solar cell and formed of the second transparent resin sheet, a colored bonding layer placed between the second transparent bonding layer and the first resin sheet and formed of the colored resin sheet, and the first resin sheet. A loss modulus of the colored resin sheet at a temperature of the pressing is higher than a loss modulus of the first transparent resin sheet at the temperature of the pressing. | 04-09-2015 |
20150118782 | SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS - The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure. | 04-30-2015 |
20150118783 | METHOD OF MANUFACTURING SOLAR CELL MODULE AND SOLAR CELL MODULE - A stacked body is obtained by stacking a glass plate, a transparent resin sheet, a solar cell, a colored resin sheet, and a first resin sheet in the order. The stacked body is pressed under heat to fabricate the solar cell module. The module includes the glass plate, a transparent sealing layer placed between the glass plate and the solar cell and formed of the transparent resin sheet, a colored sealing layer placed between the first resin sheet and the solar cell and formed of the colored resin sheet, and the first resin sheet. One of the transparent resin sheet and the colored resin sheet has a tan δ of 1 or higher at a temperature of the pressing, and the other one of the transparent resin sheet and the colored resin sheet has a tan δ of less than 1 at the temperature of the pressing. | 04-30-2015 |
20150140720 | Process for Manufacturing a Photonic Circuit with Active and Passive Structures - A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer having a thickness below 300 nanometers above the high refractive index waveguide layer; annealing the patterned high refractive index waveguide layer before and/or after the planarizing oxide layer; manufacturing on a second wafer a second layer stack comprising a detachable mono-crystalline silicon waveguide layer; transferring and bonding the first layer stack and the second layer stack; manufacturing active photonic devices in the mono-crystalline silicon waveguide layer; and realizing evanescent coupling between the mono-crystalline silicon waveguide layer and the high refractive index waveguide layer. | 05-21-2015 |
20150318326 | Wafer-Level Bonding Method For Camera Fabrication - A wafer-level method for fabricating a plurality of cameras includes modifying an image sensor wafer to reduce risk of the image sensor wafer warping, and bonding the image sensor wafer to a lens wafer to form a composite wafer that includes the plurality of cameras. A wafer-level method for fabricating a plurality of cameras includes bonding an image sensor wafer to a lens wafer, using a pressure sensitive adhesive, to form a composite wafer that includes the plurality of cameras. | 11-05-2015 |
20150334279 | Low Profile Camera and Vision Sensor - A camera configured for a predetermined environment can be made low profile in the following manner. The camera includes an image sensor that has a light sensitive portion that can sense light from the predetermined environment. A substantially opaque mask is disposed above the light sensitive portion of the image sensor and has at least one opening through which the image sensor senses light. The low profile structure of the camera can be realized with substantially transparent material disposed between the substantially opaque mask and the image sensor that has index of refraction that is greater than an index of refraction of the predetermined environment. Accordingly, light through the opening refracts as it passes through the substantially transparent material to the image sensor. | 11-19-2015 |
20150349003 | Vertically Integrated Image Sensor Chips and Methods for Forming the Same - A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a first integrated circuit device in the BSI image sensor chip, forming a second via penetrating through the BSI image sensor chip to connect to a second integrated circuit device in the device chip, and forming a metal pad to connect the first via to the second via. | 12-03-2015 |
20150372050 | IMAGE SENSOR HAVING LENS TYPE COLOR FILTER AND METHOD FOR FABRICATING THE SAME - The image sensor includes lens-type color filters having a uniform shape for a plurality of pixels. The image sensor includes a plurality of pixels formed in a substrate, a plurality of color filter housings formed over outer boundaries of the respective pixels, and a plurality of color filters filled in spaces defined by the respective color filter housings, wherein the clock filter housings surround edges of the respective color filters with a given curvature. | 12-24-2015 |
20160035785 | METHOD OF FORMING A LOW PROFILE IMAGE SENSOR PACKAGE - An image sensor package, and method of making same, that includes a printed circuit board having a first substrate with an aperture extending therethrough, one or more circuit layers, and a plurality of first contact pads electrically coupled to the one or more circuit layers. A sensor chip mounted to the printed circuit board and disposed at least partially in the aperture. The sensor chip includes a second substrate, a plurality of photo detectors formed on or in the second substrate, and a plurality of second contact pads formed at the surface of the second substrate which are electrically coupled to the photo detectors. Electrical connectors each electrically connect one of the first contact pads and one of the second contact pads. A lens module is mounted to the printed circuit board and has one or more lenses disposed for focusing light onto the photo detectors. | 02-04-2016 |
20160071900 | Backside Illuminated Image Sensor - A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer. | 03-10-2016 |
20160079304 | METHOD FOR FABRICATING AN IMAGE SENSOR PACKAGE - An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via hole therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via hole for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced. | 03-17-2016 |
20160085039 | INTEGRATED PHOTODETECTOR WAVEGUIDE STRUCTURE WITH ALIGNMENT TOLERANCE - An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a waveguide structure bounded by one or more shallow trench isolation (STI) structure(s). The method further includes forming a photodetector fully landed on the waveguide structure. | 03-24-2016 |
20160172400 | PHOTO DETECTOR AND METHOD FOR FABRICATING THE SAME | 06-16-2016 |
20160380024 | IMAGE SENSOR CHIP PACKAGE AND FABRICATING METHOD THEREOF - A method for fabricating an image sensor chip package begins at providing a wafer, which includes forming a plurality of image sensor components on a substrate, forming a plurality of spacers on the substrate for separating the image sensor components, and disposing a transparent plate on the spacers. The method further includes forming a plurality of stress notches on the transparent plate. After the stress notches are formed, the transparent plate is pressed and the substrate is cut at the second chambers. The transparent plate is broken along the stress notches. | 12-29-2016 |