Class / Patent application number | Description | Number of patent applications / Date published |
438042000 | Groove formation | 37 |
20090081821 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor layer is provided on a surface of a sapphire substrate, the sapphire substrate having smooth surfaces. A support substrate is mounted on an electrode formation surface of the semiconductor layer. A surface portion of the semiconductor layer is melted, and the sapphire substrate is separated from the semiconductor layer at an interface between the sapphire substrate and the semiconductor layer, thereby exposing the semiconductor layer. While the surface portion of the exposed semiconductor layer is melted, the holding substrate with projections/depressions or stripe grooves is pressed against the surface portion of the semiconductor layer, so that the projections/depressions or stripe grooves formed in the holding substrate are transferred onto the surface portion of the semiconductor layer. The support substrate is separated from the semiconductor layer at an interface between the semiconductor layer and the support substrate. | 03-26-2009 |
20090181484 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced. | 07-16-2009 |
20090197364 | METHOD OF FABRICATING SUBSTRATE - A method of fabricating a substrate includes following steps. First, a metallic panel having a first surface and a second surface is provided. A first half-etching process is carried out to etch the first surface of the metallic panel to a first depth so that a first patterned metallic layer is formed on the first surface. Next, a first insulating material is deposited into gaps in the first patterned metallic layer to form a first insulator. Thereafter, a second half-etching process is carried out to etch the second surface of the metallic panel to a second depth and expose at least a portion of the first insulator so that a second patterned metallic layer is formed on the second surface. The first depth and the second depth together equal the thickness of the metallic panel. | 08-06-2009 |
20090263925 | NITRIDE-BASED LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate. | 10-22-2009 |
20090298212 | Silicon Based Solid State Lighting - A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers. | 12-03-2009 |
20100093123 | LIGHT EMITTING DEVICE HAVING LIGHT EXTRACTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer. | 04-15-2010 |
20100112741 | INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES AND METHODS FOR MAKING INTEGRATED PHOTONIC SEMICONDUCTOR DEVICES - A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly. | 05-06-2010 |
20110076793 | PRODUCTION PROCESS FOR SURFACE-MOUNTING CERAMIC LED PACKAGE, SURFACE-MOUNTING CERAMIC LED PACKAGE PRODUCED BY SAID PRODUCTION PROCESS, AND MOLD FOR PRODUCING SAID PACKAGE - The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom of the ceramic green sheet substrate, and firing the ceramic green sheet substrate. | 03-31-2011 |
20110111543 | METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A thin-film transistor including a gate electrode, a drain electrode, and a source electrode is formed. A first insulating film is formed so as to cover the thin-film transistor. A second insulating film is formed on the first insulating film. A transparent conductive film is formed on the second insulating film. An etching resist which is patterned by a photolithography process is formed on the transparent conductive film. A first transparent electrode is formed by patterning the transparent conductive film by a first etching using the etching resist. A penetration hole is formed in the second insulating film at a position above one of the drain electrode and the source electrode by a second etching which is performed using the etching resist on a surface of the second insulating film exposed from the first transparent electrode. | 05-12-2011 |
20110159624 | METHOD OF FORMING LIGHT-EMITTING DIODE - A method of forming a light emitting diode is provided. The method includes providing a growth substrate; sequentially forming a sacrificial layer and an epitaxial layer on the growing substrate; forming one or more epitaxial layer openings penetrating the epitaxial layer and exposing the sacrificial layer; forming a supporting layer on the epitaxial layer, the supporting layer having one or more supporting layer openings penetrating the supporting layer and joining the epitaxial layer openings; and selectively etching the sacrificial layer to separate the growth substrate from the epitaxial layer. | 06-30-2011 |
20120058584 | Multi-Junction LED - A light source and method for making the same are disclosed. The light source includes a substrate and a light emitting structure that is deposited on the substrate. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first segment in series with the second segment. A first blocking diode between the light emitting structure and the substrate prevents current from flowing between the light emitting structure and the substrate when the light emitting structure is emitting light. The barrier extends through the light emitting structure into the first blocking diode. | 03-08-2012 |
20120142133 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps of providing a substrate with an epitaxial layer thereon. The epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer successively grown on the substrate. The epitaxial layer has dislocation defects traversing the first semiconductor layer, the active layer and the second semiconductor layer. The epitaxial layer is then subjected to an etching process which remove parts of the second semiconductor layer and the active layer along the dislocation defects to form recesses recessing from the second semiconductor layer to the active layer. Thereafter a first electrode and a second electrode are formed on the first semiconductor layer and the second semiconductor layer, respectively. | 06-07-2012 |
20120196396 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating a light emitting diode (LED) chip is provided. First, a substrate is provided. A buffer layer is formed on the substrate. The buffer layer is patterned to form a plurality of recesses on a surface thereof. A first type semiconductor layer is formed on the surface of the buffer layer. A portion of the surface where the first type semiconductor layer and the buffer layer are in contact constitutes a bonding surface, and voids exist between the buffer layer and the first type semiconductor layer. An active layer and a second type semiconductor layer are formed on the first type semiconductor layer in sequence. A second electrode is formed on the second type semiconductor layer. A lift-off process is performed to separate the first type semiconductor layer and the buffer layer. | 08-02-2012 |
20120258558 | METHOD OF MANUFACTURING A SEMICONDUCTOR LASER - Provided is a semiconductor laser, wherein (λa−λw) >15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a distance of | 10-11-2012 |
20120276670 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer. | 11-01-2012 |
20120276671 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method of making a LED includes following steps. A substrate with an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A semiconductor epitaxial layer is grown on the epitaxial growth surface, and the semiconductor epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer. The semiconductor epitaxial layer is etched to expose part of the carbon nanotube layer. A first electrode is formed on a surface of the semiconductor epitaxial layer which is away from the substrate. A second electrode is formed to electrically connect with the part of the carbon nanotube layer which is exposed. | 11-01-2012 |
20120276672 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer. | 11-01-2012 |
20120276673 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making a light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is placed on the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. Sixth, the carbon nanotube layer is removed. | 11-01-2012 |
20130005065 | SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material having a first surface and a second surface opposite the first surface. The semiconductor material has an aperture extending into the semiconductor material from the first surface. The light emitting diode also includes an active region in direct contact with the semiconductor material, and at least a portion of the active region is in the aperture of the semiconductor material. | 01-03-2013 |
20130045556 | Light-Emitting Devices with Textured Active Layer - A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench. | 02-21-2013 |
20130217166 | LIGHT-EMITTING DEVICES WITH IMPROVED ACTIVE-REGION - A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided. | 08-22-2013 |
20130252361 | Light-Emitter-Based Devices with Lattice-Mismatched Semiconductor Structures - Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate comprising a first crystalline material. | 09-26-2013 |
20130330869 | OPTICAL DEVICE PROCESSING METHOD - An optical device processing method including: a groove forming step of forming a plurality of grooves on a front side of a sapphire substrate; a film forming step of forming an epitaxial film on the front side of the sapphire substrate after performing the groove forming step, thereby forming a plurality of optical devices and a plurality of crossing division lines for partitioning the optical devices; and a dividing step of dividing the sapphire substrate with the epitaxial film along the division lines after performing the film forming step, thereby obtaining a plurality of individual optical device chips. | 12-12-2013 |
20130344634 | Double Layer Interleaved P-N Diode Modulator - A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion. | 12-26-2013 |
20140024158 | METHOD OF FABRICATING A LIGHT-EMITTING ELEMENT - Provided are a light-emitting element and a method of fabricating the same. The light-emitting element includes: a first pattern including conductive regions and non-conductive regions. The non-conductive regions are defined by the conductive regions. The light-emitting element also include an insulating pattern including insulating regions and non-insulating regions which correspond respectively to the conductive regions and non-conductive regions. The non-insulating regions are defined by the insulating regions. The light-emitting element further includes a light-emitting structure interposed between the first pattern and the insulating pattern. The light-emitting structure includes a first semiconductor pattern of a first conductivity type, a light-emitting pattern, and a second semiconductor pattern of a second conductivity type which are stacked sequentially. The light-emitting element also includes a second pattern formed in the non-insulating regions. | 01-23-2014 |
20140073075 | METHOD FOR SEPARATING LIGHT-EMITTING DIODE FROM A SUBSTRATE - A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs. | 03-13-2014 |
20140315340 | LASER DIODES WITH SCRIBE STRUCTURES - A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking. | 10-23-2014 |
20150079713 | LIGHT EMITTING DIODE AND A MANUFACTURING METHOD THEREOF, A LIGHT EMITTING DEVICE - An LED includes a first electrode, for connecting the LED to a negative electrode of a power supply and a substrate located on the first electrode in which a plurality of contact holes are formed extending through the substrate. The diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor. The manufacturing method includes forming successively an LED die and a second electrode on a substrate, patterning a back surface of the substrate to form inverted trapezoidal contact holes which expose the LED die, and filling the contact holes with conductive material until the back face of the substrate is covered by the conductive material. | 03-19-2015 |
20160197014 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THROUGH SILICON PLUGS | 07-07-2016 |
20160380010 | FABRICATION METHOD OF PIXEL STRUCTURE - A fabrication method of a pixel structure is provided. The fabrication method includes: forming a gate electrode, a gate insulating layer, an active layer, a pixel electrode layer and a source-drain electrode layer on a substrate, and etching the source-drain electrode layer by using a photoresist pattern to form a source electrode and a drain electrode; ashing the photoresist pattern, so as to align edges of the ashed photoresist pattern with edges of the source electrode and the drain electrode; etching a silicon oxide generated in ashing the photoresist pattern; and etching a semiconductor layer between the source electrode and the drain electrode by an etching process to form a channel. The fabrication method can remove indium-containing material remained on both sides of a source electrode and a drain electrode, and can resolve a problem that a width of a channel between the source electrode and the drain electrode is small. | 12-29-2016 |
438043000 | Tapered etching | 3 |
20090233394 | Led with substrate modifications for enhanced light extraction and method of making same - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 09-17-2009 |
20140080239 | PATTERNED SUBSTRATE FOR LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE EMPLOYING THE SAME - Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency. | 03-20-2014 |
20140377899 | LIGHT EMITTING DIODE CHIP MANUFACTURING METHOD - A light emitting diode chip manufacturing method includes the following steps: a substrate is provided. A first semiconductor layer is formed on the substrate. A light-emitting layer is formed on a portion of the first semiconductor layer, and the surface of the first semiconductor layer not covered by the light-emitting layer is exposed. A second semiconductor layer is formed on the light-emitting layer. A hard shielding layer is formed on the second semiconductor layer and the exposed surface of the first semiconductor layer, such that a multi-layer stacked structure is formed on the substrate. A cutting treatment is performed. An etching treatment is performed. The hard shielding layer is patterned to form a current blocking layer on the second semiconductor layer, and the current blocking layer is made of the hard shielding layer. | 12-25-2014 |
438044000 | With epitaxial deposition of semiconductor in groove | 4 |
20090298213 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies. | 12-03-2009 |
20090317929 | METHOD OF PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask. | 12-24-2009 |
20140134773 | Patterned Layer Design for Group III Nitride Layer Growth - A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. | 05-15-2014 |
20140242738 | MANUFACTURING METHOD FOR AN LED - A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching the blocking layer to form patterned grooves penetrating the blocking layer to the first N-type epitaxial layer. A second N-type epitaxial layer is then formed on the blocking layer to contact the first N-type epitaxial layer; a light emitting layer, a P-type epitaxial layer and a conductive layer are thereafter disposed on the second N-type epitaxial layer; an N-type electrode is formed to electrically connect with the first N-type epitaxial layer, and a P-type electrode is formed on the conductive layer. The N-type electrode is disposed on the blocking layer and separated from the second | 08-28-2014 |