Class / Patent application number | Description | Number of patent applications / Date published |
430326000 | Pattern elevated in radiation unexposed areas | 77 |
20080220381 | Antireflection film composition and patterning process using the same - An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. | 09-11-2008 |
20080241765 | METHODS AND SYSTEMS FOR PROVIDING DIRECT MANUFACTURED INTERCONNECTING ASSEMBLIES - A system of interconnecting structures fabricated utilizing an additive manufacturing process is described. The system includes a first component comprising a first unit of an interconnection mechanism, and a second component comprising a second unit of an interconnection mechanism. The first component and first unit are integrally formed utilizing the additive manufacturing process as are the second component and the second unit. The first unit and the second unit are operable to engage one another to attach the first component to the second component. | 10-02-2008 |
20080318171 | METHOD OF FORMING PATTERNS - A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer. | 12-25-2008 |
20090004609 | Lithography process - A lithography process for manufacturing bit-island storage mediums that results in improved resolution and uniformity between bit-islands. The lithography process includes applying a resist coating polymer to a surface of a substrate. Selected areas of the resist coating polymer are then exposed to an energy source, wherein each selected area is exposed to the energy source multiple times to provide a time-averaged exposure of the selected areas that reduces errors caused by noise associated with the energy source. After exposure of the resist coating to the energy source, a selective developer solution is applied to the resist coating to develop the fully exposed regions of the resist coating while leaving undeveloped the partially exposed regions of the resist coating. A polymer reflow material is applied to the developed resist pattern and heated to a selected temperature. The polymer reflow material and selected temperature induce reflow of the developed resist coating such that such that a circumferential diameter associated with the holes formed in the resist pattern is reduced to a desired value distance. The process of inducing reflow of the resist coating can be repeated as desired to achieve a resist pattern wherein the holes formed in the resist pattern are reduced to a desired size. The resist pattern formed on the substrate is then transferred to a magnetic medium to form the desired pattern of bit-islands. | 01-01-2009 |
20090011377 | PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS - A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas T | 01-08-2009 |
20090023102 | POSITIVE RESIST COMPOSITION FOR FORMING THICK-FILM RESIST, THICK-FILM RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN - A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R | 01-22-2009 |
20090042147 | METHOD OF FORMING PATTERNS - A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer. | 02-12-2009 |
20090098489 | METHOD FOR FORMING RESIST PATTERN - A method for forming a resist pattern that includes the following steps (i) and (ii): (i) a step of forming a first resist layer on a substrate using a positive resist composition, and then conducting selective exposure, thereby forming a latent image of a dense pattern on the first resist layer, and (ii) a step of forming a second resist layer on top of the first resist layer using a negative resist composition, conducting selective exposure, and then developing the first resist layer and the second resist layer simultaneously, thereby exposing a portion of the latent image of the dense pattern, wherein as the negative resist composition, a negative resist composition dissolved in an organic solvent that does not dissolve the first resist layer is used. | 04-16-2009 |
20090117499 | Cleaning solution for immersion photolithography system and immersion photolithograph process using the cleaning solution - A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system. | 05-07-2009 |
20090123880 | PATTERN FORMING METHOD - A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating. | 05-14-2009 |
20090142714 | METHOD FOR USING A TOPCOAT COMPOSITION - A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist. | 06-04-2009 |
20090142715 | LAMINATED RESIST USED FOR IMMERSION LITHOGRAPHY - There is provided a laminated resist which is transparent in the case of exposure light of not less than 193 nm and can form a fine pattern having an intended form without defects with good reproducibility. The laminated resist has a photoresist layer (L | 06-04-2009 |
20090162800 | Process for Imaging a Photoresist Coated over an Antireflective Coating - The process of the present invention relates to imaging a photoresist film coated over an antireflective coating film comprising a) forming an antireflective coating film from an antireflective coating composition, where the composition comprises a siloxane polymer, b) treating the antireflective film with an aqueous alkaline treating solution, c) rinsing the antireflective film treated with an aqueous rinsing solution, d) forming a coating of a photoresist over the film of the antireflective coating composition, e) imagewise exposing the photoresist film, and, f) developing the photoresist with an aqueous alkaline developing solution. | 06-25-2009 |
20090208886 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer. | 08-20-2009 |
20090220898 | PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - The pattern forming method includes forming a catalyst film on a base layer having an uneven surface, wherein the catalyst layer is formed along the uneven surface of the base layer; forming a coating film by coating a fluid material on the catalyst film; forming an insoluble layer which is insoluble in a solvent in the coating film by reacting the coating film along the catalyst film; and maintaining the insoluble layer by removing an unreacted portion of the coating film by using the solvent. | 09-03-2009 |
20090233244 | METHOD AND SYSTEM FOR OVERLAY CORRECTION DURING PHOTOLITHOGRAPHY - A method of performing overlay error correction includes forming a photoresist layer over a substrate and exposing a first set of apertures to incident radiation. The method also includes determining an overlay error associated with the first set of apertures and determining an overlay correction as a function of the determined overlay error. The method further includes exposing a data area and a second set of apertures. The data area and the second set of apertures are exposed based, in part, on the determined overlay correction. Moreover, the method includes verifying the determined overlay correction. | 09-17-2009 |
20090246717 | METHOD FOR FORMING A PATTERNED PHOTORESIST LAYER - A photoresist layer is disclosed. Utilizing light diffraction properties, a transparent layer is disposed between a light-shielding layer and a photoresist layer during an exposure step, such that the patterned photoresist layer has non-vertical sidewalls. The method of the invention can be applied during front side exposure or back side exposure, and is also practical for positive type photoresists or negative photoresists. | 10-01-2009 |
20090253084 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer. | 10-08-2009 |
20090269708 | Method of manufacturing magnetic head having a patterned pole layer and method of forming a patterned layer - A method of forming a magnetic head comprises the steps of: selectively exposing through the use of a photomask a photoresist layer unpatterned; forming a pattern for forming a pole layer by developing the photoresist layer after the exposure; and forming the pole layer through the use of the pattern. The photomask includes first to third regions. The first region has such a perimeter that a projection image thereof is shaped along a perimeter of an ideal shape of the top surface of the pole layer. The second region touches the perimeter of the first region, and is located outside the first region. The third region is located inside the first region without touching the perimeter of the first region. The third region suppresses deviation of the pole layer from its desired shape which may be caused by the effect of light reflected while the photoresist layer is exposed. | 10-29-2009 |
20090280441 | EXPOSURE METHOD, EXPOSURE DEVICE, AND MICRO DEVICE MANUFACTURING METHOD - An exposure device includes: a light source (LS) which emits a pulse light; and a variable shaped mask ( | 11-12-2009 |
20090311637 | BLOCK COPOLYMER AND SUBSTRATE PROCESSING METHOD - A block copolymer that can form selectively a microphase-separated structure under exposure with an ultraviolet exposure device, and a substrate processing method by which a micropattern can be formed at a low cost on the substrate by using the block copolymer. The block copolymer has as a basic skeleton a hydrophobic block that has a repeating structure of a hydrophobic monomer and a hydrophilic block that has a repeating structure of a hydrophilic monomer having a hydrophilic functional group. At least some of the hydrophilic functional groups are covered with a hydrophobic protective group and the hydrophobic protective group, which covers the hydrophilic functional group, is dissociated from the hydrophilic functional group by light irradiation. The substrate processing method uses the block copolymer to form a micropattern on the substrate. | 12-17-2009 |
20100003623 | METHOD OF PATTERNING MULTIPLE PHOTOSENSITIVE LAYERS - A method of patterning multiple photosensitive layers is provided. A first photosensitive layer is formed on a substrate. The first photosensitive layer is exposed by using a first mask. A second photosensitive layer is formed on the first photosensitive layer. The second photosensitive layer is exposed by using a second mask, wherein the second mask is different from the first mask. A first development process is performed to the exposed first and second photosensitive layers to form a plurality of patterns on the substrate. | 01-07-2010 |
20100009299 | Resist composition and patterning process - The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F | 01-14-2010 |
20100047724 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN - A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern. | 02-25-2010 |
20100055624 | METHOD OF PATTERNING A SUBSTRATE USING DUAL TONE DEVELOPMENT - A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process. | 03-04-2010 |
20100055625 | METHOD OF PROCESS OPTIMIZATION FOR DUAL TONE DEVELOPMENT - A method for patterning a substrate is described. In particular, the invention relates to a method for double patterning a substrate using dual tone development. Further, the invention relates to optimizing a dual tone development process. | 03-04-2010 |
20100055626 | METHOD FOR PATTERN FORMATION - A resist film made of a chemically amplified positive resist is formed on a substrate. On the resist film, a light absorbing film containing a fluoropolymer which is alkali-soluble and has an aromatic ring is formed. Thereafter, first pattern exposure is performed by irradiating the resist film through the light absorbing film with first exposure light containing extreme ultraviolet light having passed through a first mask. Thereafter, second pattern exposure is performed by irradiating the resist film through the light absorbing film with exposure light having passed through a second mask. After the substrate is heated, the resist film is developed to remove the light absorbing film and form a resist pattern made of the resist film. An opening portion of the second mask is formed in a region corresponding to a non-opening portion of the first mask in which an opening portion is not formed. | 03-04-2010 |
20100062379 | METHOD OF FORMING RESIST PATTERN - Disclosed is a method of forming a resist pattern, including: applying a positive resist composition on a support | 03-11-2010 |
20100062380 | DOUBLE PATTERNING PROCESS - A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R | 03-11-2010 |
20100068660 | Pattern forming method and device production method - A pattern forming method includes coating, on a wafer, a negative resist and a positive resist which has a higher sensitivity; exposing the positive resist and the negative resist on the wafer with an image of a line-and-space pattern; and developing the positive resist and the negative resist in a direction parallel to a normal line of a surface of the wafer. A fine pattern, which exceeds the resolution limit of an exposure apparatus, can be formed by using the lithography process without performing the overlay exposure. | 03-18-2010 |
20100068661 | PATTERN FORMING METHOD - A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating. | 03-18-2010 |
20100099051 | MULTI-FOCUS METHOD OF ENHANCED THREE-DIMENSIONAL EXPOSURE OF RESIST - The field of this disclosure is making three-dimensional topographic structures by means of graduated exposure in a photosensitive material, such as a photoresist, photosensitive polymide, or similar. Such patterns may be written either to be used directly as optical, mechanical, fluidic, etc. components, e.g. diffusors, non-reflecting surfaces, Fresnel lenses and Fresnel prisms, computer-generated holograms, lenslet arrays, etc, or to be used as masters for the fabrication of such components by replication. Replication can be done by molding, pressing, embossing, electroplating, etching, as known in the art. This disclosure includes descriptions of using passive absorbing components in thin resist, using high gamma thick resists with high resolution pattern generators, using multiple focal planes including at least one focal plane in the bottom half of the resist, and iterative simulation of patterning and adjustment of an exposure map. | 04-22-2010 |
20100159404 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half. | 06-24-2010 |
20100159405 | METHOD OF MANUFACTURING STRUCTURE AND METHOD OF MANUFACTURING INK JET HEAD - According to the fine pattern manufacturing method of the invention, the residue of a pattern which is obtained by pressing a mold is prevented from occurring, so that the structure can be more easily manufactured. | 06-24-2010 |
20100167217 | METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern. | 07-01-2010 |
20100203457 | PATTERNING PROCESS - A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask including a lattice-like first shifter and a second shifter arrayed on the first shifter and consisting of lines which are thicker than the line width of the first shifter, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal. | 08-12-2010 |
20100221672 | PATTERN FORMING METHOD - A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size. | 09-02-2010 |
20100227282 | Methods Of Patterning Positive Photoresist - A method of patterning positive photoresist includes providing positive photoresist over a substrate. An area of the positive photoresist is exposed to a pattern of activating radiation at a dose which is below the Dose To CD of the pattern with the positive photoresist. The area of the positive photoresist is flood exposed to activating radiation at a dose from 1% to 75% of E | 09-09-2010 |
20100248167 | PATTERN-FORMING METHOD - A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern. | 09-30-2010 |
20100310995 | DOUBLE PATTERNING STRATEGY FOR CONTACT HOLE AND TRENCH IN PHOTOLITHOGRAPHY - A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern. | 12-09-2010 |
20110008735 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having a triphenylsulfonium cation and a sulfite anion within the molecule is best suited as a photoacid generator in chemically amplified resist compositions. Upon exposure to high-energy radiation, the sulfonium salt generates a sulfonic acid, which facilitates efficient scission of acid labile groups in chemically amplified positive resist compositions. Because of substantial non-volatility under high vacuum conditions in the EB or EUV lithography, the risk of the exposure tool being contaminated is minimized. | 01-13-2011 |
20110020756 | Calixarene Blended Molecular Glass Photoresists and Processes of Use - Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition. | 01-27-2011 |
20110039214 | Pattern Forming Method and Method of Manufacturing Semiconductor Device - A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film. | 02-17-2011 |
20110045413 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME - To provide a resist composition for negative tone development, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension, and a pattern forming method using the same. | 02-24-2011 |
20110059407 | DOUBLE PATTERNING STRATEGY FOR FORMING FINE PATTERNS IN PHOTOLITHOGRAPHY - A method of lithography patterning includes forming a first resist pattern over a substrate, baking the first resist features, hardening the first resist features, forming a second resist layer within the hardened first resist features, and patterning the second resist layer to form at least one second resist feature between the hardened first features. | 03-10-2011 |
20110076626 | Positive-Working Photoimageable Bottom Antireflective Coating - The invention relates to a photoimageable antireflective coating composition capable of forming a pattern by development in an aqueous alkaline solution, comprising, (i) a polymer A soluble in a coating solvent and comprises a chromophore, a crosslinking moiety, and optionally a cleavable group which under acid or thermal conditions produces a functionality which aids in the solubility of the polymer in an aqueous alkaline solution and; (ii) at least one photoacid generator; (iii) a crosslinking agent; (iv) optionally, a thermal acid generator; (v) a polymer B which is soluble in an aqueous alkaline solution prior to development, where polymer B is non-miscible with polymer A and soluble in the coating solvent, and; (vi) a coating solvent composition, and (vii) optionally, a quencher. The invention also relates to a process for imaging the antireflective coating. | 03-31-2011 |
20110104618 | SELF-ALIGNED MASKING FOR SOLAR CELL MANUFACTURE - Various methods of utilizing the physical and chemical property differences between amorphized and crystalline silicon are used to create masks that can be used for subsequent implants. In some embodiments, the difference in film growth between amorphous and crystalline silicon is used to create the mask. In other embodiments, the difference in reflectivity or light absorption between amorphous and crystalline silicon is used to create the mask. In other embodiments, differences in the characteristics of doped and undoped silicon is used to create masks. | 05-05-2011 |
20110111351 | Photosensitive Ink Composition for Screen Printing and Method of Forming Positive Relief Pattern with Use Thereof - Disclosed is a photosensitive ink which can form a coated film that is excellent in insulation properties, heat resistance, low warping, low elasticity and adhesion with the substrate, when used as an ink for screen printing, and with which clogging of the screen, bleeding, blur, chipping and the like are unlikely to occur even when the screen printing is repeatedly carried out, so that which has an excellent ease of handling in printing. The ink composition comprises 100 parts by weight of an organic solvent-soluble polyimide block copolymer(s), and 1 to 100 parts by weight of a photoacid generator(s). The polyimide block copolymer(s) and the photoacid generator(s) are dissolved in an organic solvent. The polyimide block copolymer(s) contain(s) in its molecular skeleton a diamine having a siloxane bond, and an aromatic diamine having a hydroxyl group(s) and/or carboxyl group(s) at ortho-position with respect to an amino group. | 05-12-2011 |
20110244402 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then positive-tone developed to remove a region having high radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
20110244403 | METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS - A method and system for patterning a substrate using a radiation-sensitive material is described. The method and system include forming a layer of radiation-sensitive material on a substrate, exposing the layer of radiation-sensitive material to a pattern of radiation, and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material is then developed to remove either a region having high radiation exposure or a region having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines. | 10-06-2011 |
20110244404 | Photoresist Processing Methods - A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating. | 10-06-2011 |
20110262872 | METHOD OF FORMING RESIST PATTERN AND RESIST COMPOSITION - There are provided a method of forming a resist pattern in which a resist pattern is formed on top of a substrate by using a chemically amplified resist composition and conducting patterning two or more times, the method being capable of reducing the extent of damage, caused by the second patterning, imposed upon the first resist pattern that is formed by the first patterning; as well as a resist composition that is useful for forming the first resist pattern in this method of forming a resist pattern. The method includes forming of a first resist pattern using a resist composition containing a thermal base generator as a chemically amplified resist composition during first patterning, and then conducting a hard bake for baking the first resist pattern under a bake condition such that a base is generated from the thermal base generator, prior to the second patterning. | 10-27-2011 |
20120064463 | Method of Forming Micropatterns - Provided is a method of forming micropatterns, in which a line-and-space pattern is formed using a positive photoresist, and a spin-on-oxide (SOX) spacer is formed on two sidewalls of the line-and-space pattern and used in etching a lower layer, thereby doubling a pattern density. Accordingly, all operations may be performed in single equipment (lithography equipment) without taking a substrate out, and thus a high throughput is obtained, and concerns about pollution are very low. Moreover, as the line-and-space pattern is formed using a wet method by using a negative tone developer, line-width roughness (LWR) of the micropatterns may be improved compared to when a dry etching method is used. | 03-15-2012 |
20120082944 | Patterning nano-scale patterns on a film comprising unzipping copolymers - The invention concerns a method for patterning a surface of a material. A substrate having a polymer film thereon is provided. The polymer is a selectively reactive polymer (e.g., thermodynamically unstable): it is able to unzip upon suitable stimulation. A probe is used to create patterns on the film. During the patterning, the film is locally stimulated for unzipping polymer chains. Hence, a basic idea is to provide a stimulus to the polymeric material, which in turn spontaneously decomposes e.g., into volatile constituents. For example, the film is thermally stimulated in order to break a single bond in a polymer chain, which is sufficient to trigger the decomposition of the entire polymer chain. | 04-05-2012 |
20120082945 | METHOD FOR USING A TOPCOAT COMPOSITION - A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist. | 04-05-2012 |
20120135357 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS - A positive resist composition comprising a polymer comprising recurring units of a specific structure adapted to generate an acid upon exposure to high-energy radiation, recurring units of a lactone ring-containing structure, and acid labile units, all the recurring units being free of hydroxyl, can form a fine size pattern having a rectangular profile and improved collapse resistance. | 05-31-2012 |
20120164587 | HYBRID LITHOGRAPHIC METHOD FOR FABRICATING COMPLEX MULTIDIMENSIONAL STRUCTURES - Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure. | 06-28-2012 |
20120208131 | METHOD OF FORMING RESIST PATTERN - A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits increased solubility in an organic solvent under action of acid and an acid generator component which generates acid upon exposure; conducting exposure of the resist film; and patterning the resist film by positive development using a developing solution containing the organic solvent to form a resist pattern,
| 08-16-2012 |
20120244478 | RESIST PATTERN FORMATION METHOD - A resist pattern formation method includes providing a first positive-tone radiation-sensitive resin composition on a substrate to form a first resist layer. The first resist layer is selectively exposed and developed to form a first resist pattern. The first resist pattern is coated with a resist pattern insolubilizing resin composition which comprises a resin and an alcohol solvent, the resin having a hydroxyl group. The resist pattern insolubilizing resin composition is baked or cured with UV to insolubilize the first resist pattern in a developer and in a second positive-tone radiation-sensitive resin composition. The resist pattern insolubilizing resin composition is developed to form an insolubilized resist pattern. The second positive-tone radiation-sensitive resin composition is provided on the insolubilized resist pattern to form a second resist layer. The second resist layer is selectively exposed and developed to form a second resist pattern. | 09-27-2012 |
20120282554 | LARGE AREA NANOPATTERNING METHOD AND APPARATUS - Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles. | 11-08-2012 |
20120308939 | BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS AND PROCESSES THEREOF - The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, | 12-06-2012 |
20130022930 | Method for Reversing Tone of Patterns on Integrated Circuit and Patterning Sub-Lithography Trenches - A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material; defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate. | 01-24-2013 |
20130089821 | RESIST PATTERN FORMATION METHOD AND PATTERN MINIATURIZATION AGENT - A resist pattern formation method that includes a step (1) of forming a resist pattern on a support using a chemically amplified positive-type resist composition, a step (2) of applying a pattern miniaturization agent to the resist pattern, a step (3) of performing a bake treatment of the resist pattern to which the pattern miniaturization agent has been applied, and a step (4) of subjecting the resist pattern that has undergone the bake treatment to alkali developing, wherein the pattern miniaturization agent contains an acid generator component, and an organic solvent that does not dissolve the resist pattern formed in the step (1). Also, a pattern miniaturization agent used in the method. | 04-11-2013 |
20130095433 | PHOTOLITHOGRAPHY METHOD INCLUDING DUAL DEVELOPMENT PROCESS - A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution. | 04-18-2013 |
20130108967 | METHOD FOR FORMING CURED FILM | 05-02-2013 |
20130164695 | METHOD FOR FORMING PATTERN - A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern. | 06-27-2013 |
20140080069 | DOUBLE PATTERNING BY PTD AND NTD PROCESS - A method of manufacturing using a double patterning method is provided. The double patterning method uses a first developer and a second developer that are different. For example, the first developer may be a positive tone developer for a positive photoresist while the second developer may be a negative tone developer for the positive photoresist. Photoresists having a photoactive compound are also provided that may be useful in double patterning methods. | 03-20-2014 |
20140099583 | SIMULTANEOUS PHOTORESIST DEVELOPMENT AND NEUTRAL POLYMER LAYER FORMATION - A photoresist layer is lithographically exposed to form lithographically exposed photoresist regions and lithographically unexposed photoresist regions. The photoresist layer is developed with a non-polar or weakly polar solvent including a dissolved neutral polymer material. A neutral polymer layer is selectively formed on physically exposed surfaces of a hard mask layer underlying the photoresist layer. The neutral polymer layer has a pattern corresponding to the complement of the area of remaining portions of the photoresist layer. The remaining portions of the photoresist layer are then removed with a polar solvent without removing the neutral polymer layer on the hard mask layer. A block copolymer material can be subsequently applied over the neutral polymer, and the neutral polymer layer can guide the alignment of a phase-separated block copolymer material in a directed self-assembly. | 04-10-2014 |
20140120478 | TECHNIQUES FOR PATTERNING RESIST - A technique for patterning a substrate is disclosed. In accordance with one exemplary embodiment, the technique may be realized as a method for patterning a substrate. The method may comprise: providing a resist on the substrate; introducing one or more species of impurities into the resist; selectively exposing a first portion of the resist to radiation while a second portion of the resist is not exposed to the radiation; exposing the resist to a developer and removing the first portion of the resist exposed to the radiation from the substrate; and exposing the resist at a temperature higher than a room temperature but lower than glass transition temperature of the resist. | 05-01-2014 |
20140199637 | PATTERN FORMING PROCESS - A pattern is formed by coating a first chemically amplified positive resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn soluble in alkaline developer upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an alkaline developer to form a positive pattern; heating the positive pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in a third organic solvent to form a negative pattern. The positive pattern and the negative pattern are simultaneously formed. | 07-17-2014 |
20140234785 | PATTERN FORMING PROCESS - A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern. | 08-21-2014 |
20140242526 | POSITIVE TONE ORGANIC SOLVENT DEVELOPED CHEMICALLY AMPLIFIED RESIST - Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties. | 08-28-2014 |
20140377708 | DOUBLE PATTERNING BY PTD AND NTD PROCESS - A method of manufacturing using a double patterning method is provided. The double patterning method uses a first developer and a second developer that are different. For example, the first developer may be a positive tone developer for a positive photoresist while the second developer may be a negative tone developer for the positive photoresist. Photoresists having a photoactive compound are also provided that may be useful in double patterning methods. The resulting double patterning results, wherein a dimension of a variable first dense pattern is larger than a dimension of a variable second dense pattern. | 12-25-2014 |
20160002494 | FINE RESIST PATTERN-FORMING COMPOSITION AND PATTERN FORMING METHOD USING SAME - The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern. | 01-07-2016 |
20160091790 | METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN SPLITTING AGENT, SPLIT PATTERN IMPROVING AGENT, RESIST PATTERN SPLITTING MATERIAL, AND POSITIVE RESIST COMPOSITION FOR FORMING SPLIT PATTERN - A method of forming a resist pattern, including: a step A in which a positive resist composition is applied to a substrate to form a positive resist film, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern; a step B in which a solution containing an acid or a thermoacid generator is applied to the substrate whereon the first resist pattern is formed, so as to cover the first resist pattern, to form a structure having the first resist pattern and a first layer covering the first resist pattern; a step C in which the structure is heated and the solubility of the first resist pattern in an organic solvent is changed under action of the acid or under action of acid generated from the thermoacid generator; and a step D in which the structure after heating is developed with the organic solvent to remove a region of the first resist pattern other than the region of the first resist pattern where the solubility in the organic solvent is changed, so as to form a second resist pattern. | 03-31-2016 |
20160097979 | METHOD OF TRIMMING RESIST PATTERN - A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern. | 04-07-2016 |
20160195813 | DEVELOPER AND PATTERNING PROCESS USING THE SAME | 07-07-2016 |