Class / Patent application number | Description | Number of patent applications / Date published |
427255500 | Moving the base | 61 |
20080311296 | Device and Method for Organic Vapor Jet Deposition - A device and a method for facilitating the deposition and patterning of organic materials onto substrates utilizing the vapor transport mechanisms of organic vapor phase deposition is provided. The device includes one or more nozzles, and an apparatus integrally connected to the one or more nozzles, wherein the apparatus includes one or more source cells, a carrier gas inlet, a carrier gas outlet, and a first valve capable of controlling the flow of a carrier gas through the one or more source cells. The method includes moving a substrate relative to an apparatus, and controlling the composition of the organic material and/or the rate of the organic material ejected by the one or more nozzles while moving the substrate relative to the apparatus, such that a patterned organic layer is deposited over the substrate. | 12-18-2008 |
20090061087 | COMBINATORIAL PROCESS SYSTEM - A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate. | 03-05-2009 |
20090061088 | METHOD AND DEVICE FOR PRODUCING AND PROCESSING LAYERS OF SUBSTRATES UNDER A DEFINED PROCESSING ATMOSPHERE - A method is provided for producing a processing atmosphere for coating substrates, with this method primarily being used in CVD-processes for precipitating an individual layer or a system of individual layers under defined processing atmospheres, in which processing gas is supplied to a coating chamber in a defined manner and exhausted. Via the method and related devices, a variable processing atmosphere is adjustable inside the coating chamber in a flexible, reliable and homogenous manner, and requiring a reduced maintenance and energy expense, even when the substrate is heated. The processing gas is created by at least one gas channel extending perpendicular in reference to the substrate by way of supplying gas flow or exhausting, with a lateral extension being equivalent to the width of the substrate. | 03-05-2009 |
20090117272 | Layer Depositing Device and Method for Operating it - A layer depositing device comprises a chamber ( | 05-07-2009 |
20090148599 | PVD - VACUUM COATING UNIT - A vacuum coating unit includes a reactive gas inlet, at least one PVD coating source with a laminar cathode and a substrate carrier containing a multiplicity of substrates. The substrate carrier forms a two dimensional horizontal extent, and the carrier is between at least two PVD coating sources. The substrates are cutting tools with at least one cutting edge in their peripheral margin region, which are distributed in a plane of the two dimensional extent of the substrate carrier. The substrate carrier is in a horizontal plane in the vacuum process chamber spaced between the laminar cathodes of the PVD coating sources and positioned such that at least a portion of each of the at least one cutting edge includes an active cutting edge and this active cutting edge is oriented opposite at least one of the cathodes of the PVD coating sources exposed at any time along a line of sight. | 06-11-2009 |
20090238971 | EPITAXIAL WAFER MANUFACTURING APPARATUS AND MANUFACTURING METHOD - An epitaxial wafer manufacturing apparatus including: a chamber; a gas introduction port provided in the chamber and configured to introduce a reaction gas into the chamber; a gas exhaust port provided in the chamber and configured to exhaust the reaction gas from inside the chamber; a rotating unit provided inside the chamber; a wafer holder provided in an upper portion of the rotating unit and configured to hold a wafer; and an annular flow-regulating wall being spaced from the rotating unit and the wafer holder, the annular flow-regulating surrounding the upper portion of the rotating unit and a upper portion of the wafer holder, and the annular flow-regulating expanding downward. The flow-regulating wall has an upper end being located above the wafer holder. The upper end has a smaller inner diameter than an outer periphery of the wafer holder. The flow-regulating wall has a lower end being located below an upper surface of the rotating unit. The lower end has a larger inner diameter than an outer periphery of the rotating unit. | 09-24-2009 |
20090258141 | Method and Apparatus for Coating Surfaces - An apparatus includes a workpiece support, a source for emitting a plume of coating material that flows toward the workpiece support, and plume influencing structure between the source and the workpiece support. The plume influencing structure includes a shield with plural openings extending therethrough approximately parallel to a general direction of flow of the plume away from the source. According to a different aspect, a method includes emitting from a source a plume of coating material that flows toward a workpiece support, and adjusting the flow of the plume with a shield between the source and the workpiece support, the shield having plural openings extending therethrough approximately parallel to a general direction of flow of the plume. | 10-15-2009 |
20090291209 | APPARATUS AND METHOD FOR HIGH-THROUGHPUT ATOMIC LAYER DEPOSITION - Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. | 11-26-2009 |
20090304924 | APPARATUS AND METHOD FOR LARGE AREA MULTI-LAYER ATOMIC LAYER CHEMICAL VAPOR PROCESSING OF THIN FILMS - An apparatus and method for large area high speed atomic layer chemical vapor processing wherein continuous and alternating streams of reactive and inert gases are directed towards a co-axially mounted rotating cylindrical susceptor from a plurality of composite nozzles placed around the perimeter of the processing chamber. A flexible substrate is mounted on the cylindrical susceptor. In one embodiment, the process reactor has four composite injectors arranged substantially parallel to the axis of rotation of the cylindrical susceptor. In the other embodiment, the susceptor cross section is a polygon with a plurality of substrates mounted on its facets. The reactor can be operated to process multiple flexible or flat substrates with a single atomic layer precision as well as high-speed chemical vapor processing mode. The atomic layer chemical vapor processing system of the invention also has provisions to capture unused portion of injected reactive chemical precursors downstream. | 12-10-2009 |
20090324823 | ROLL-TO-ROLL VACUUM DEPOSITION METHOD AND ROLL-TO-ROLL VACUUM DEPOSITION APPARATUS - [Object] To carry out high-quality deposition processing while effectively maintaining a function of cleaning a can roller by a cleaning unit. | 12-31-2009 |
20100055311 | Film Conveyor Apparatus and Roll-to-Roll Vacuum Deposition Method - [Object] To enable a deposition area of a base film to be protected and realize stable film traveling performance. | 03-04-2010 |
20100068381 | CHEMICAL VAPOR DEPOSITION REACTOR HAVING MULTIPLE INLETS - A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion. | 03-18-2010 |
20100075036 | DEPOSITION APPARATUS AND METHOD FOR MANUFACTURING FILM BY USING DEPOSITION APPARATUS - A vapor deposition device | 03-25-2010 |
20100189900 | ATOMIC LAYER DEPOSITION SYSTEM AND METHOD UTILIZING MULTIPLE PRECURSOR ZONES FOR COATING FLEXIBLE SUBSTRATES - Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate back and forth between spaced-apart first and second precursor zones and through a third precursor zone interposed between the first and second precursor zones, so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides spaced apart along the first and second precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between the first and second precursor zones and through the third precursor zone, it passes through a first series of flow-restricting passageways of a first isolation region interposed between the first and third precursor zones and a second series of flow-restricting passageways of a second isolation region interposed between the second and third precursor zones. | 07-29-2010 |
20100266766 | GUIDING DEVICES AND METHODS FOR CONTACTLESS GUIDING OF A WEB IN A WEB COATING PROCESS - According to embodiments described herein, a guiding device for contactless guiding of a web in a web coating process under vacuum conditions is provided. The guiding device includes a curved surface for facing the web and a group of gas outlets disposed in the curved surface and adapted for giving off a gas flow to form a hover cushion between the curved surface and the web. The guiding device further includes a gas distribution system for selectively providing the gas flow to a first subgroup of the gas outlets and for preventing the gas from flowing to a second subgroup of the gas outlets. | 10-21-2010 |
20100272892 | FILM FORMATION REACTIVE APPARATUS AND METHOD FOR PRODUCING FILM-FORMED SUBSTRATE - A plurality of partial control zones (an LL zone, an LR zone, and an R zone) that can control a gas flow rate independently in a widthwise direction of a gas flow are configured on an upstream side of the gas inlet port | 10-28-2010 |
20100272893 | Lift-off deposition system featuring a density optimized HULA substrate holder in a conical deposition chamber - A vapor deposition device using a lift-off process includes an evaporation source, a space frame mounted for rotation about a first axis that passes through the evaporation source, a central dome-shaped wafer holder mounted to the space frame wherein a centerpoint of the central dome-shaped wafer holder is aligned with the first axis, a orbital dome-shaped wafer holder mounted to the space frame in a position offset from the first axis and rotatable about a second axis that passes through a centerpoint of the orbital dome-shaped wafer holder and the evaporation source, and a plurality of wafer positions on the central dome-shaped wafer holder and the orbital dome-shaped wafer holder where each of the wafer positions are offset from the first axis and the second axis. Each of the plurality of wafer positions are configured to orient a substrate surface of a wafer mounted therein substantially orthogonal to a radial axis extending from the wafer position to the evaporation source during rotation about the first axis and the second axis. | 10-28-2010 |
20100272894 | METHOD FOR SIMULTANEOUSLY COATING A PLURALITY OF WORKPIECES - This invention relates to a fixture for use in a physical vapor deposition coating operation which comprises a support structure 14 comprising a circular base member 10, a circular top member 11 opposite the circular base member 10, and a plurality of structural members 12 joining said top member 11 to said base member 10; a plurality of panel members 13 aligned in a vertical direction around the outer periphery of said support structure 14 forming a cylinder structure; said panel members 13 including a plurality of apertures for holding workpieces 19 and 35 to which a coating is to be applied; and said apertures positioned on said panel members 13 so that said workpieces 19 and 35 are aligned in a staggered vertical direction. This invention also relates to a method for simultaneously coating a plurality of workpieces 19 and 35, such as gas turbine compressor blades and vanes, with erosion resistant coatings using the fixture of this invention. | 10-28-2010 |
20100310766 | Roll-to-Roll Chemical Vapor Deposition System - A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers. | 12-09-2010 |
20100310767 | VAPOR DEPOSITION APPARATUS AND VAPOR DEPOSITION METHOD - A vapor deposition apparatus includes: a vacuum tank; an exhaust section that performs vacuum exhaust in the vacuum tank; a vapor deposition source disposed in the vacuum tank to vaporize a deposition material; and a traveling path for allowing an elongated substrate on which the deposition material is deposited to travel along a concave path with respect to the vapor deposition source at least in a region opposing the vapor deposition source. | 12-09-2010 |
20100310768 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches. | 12-09-2010 |
20110064878 | APPARATUS AND METHOD FOR FILM DEPOSITION - A deposition apparatus | 03-17-2011 |
20110097493 | FLUID DISTRIBUTION MANIFOLD INCLUDING NON-PARALLEL NON-PERPENDICULAR SLOTS - A fluid conveyance device for thin film material deposition includes a substrate transport mechanism that causes a substrate to travels in a direction. A fluid distribution manifold includes an output face. The output face includes a plurality of elongated slots. At least one of the elongated slots includes a portion that is non-perpendicular and non-parallel relative to the direction of substrate travel. | 04-28-2011 |
20110097494 | FLUID CONVEYANCE SYSTEM INCLUDING FLEXIBLE RETAINING MECHANISM - A fluid conveyance system for thin film material deposition includes a fluid distribution manifold and a substrate transport mechanism. The fluid distribution manifold includes an output face that includes a plurality of elongated slots. The output face of the fluid distribution manifold is positioned opposite a first surface of the substrate such that the elongated slots face the first surface of the substrate and are positioned proximate to the first surface of the substrate. The substrate transport mechanism causes a substrate to travel in a direction and includes a flexible mechanism that contacts a second surface of the substrate in a region that is proximate to the output face of the fluid distribution manifold. | 04-28-2011 |
20110159186 | FILM FORMING APPARATUS AND FILM FORMING METHOD - The present invention provides a film forming apparatus and a film forming method realizing improvement in the degree of freedom in film formation while suppressing production cost. While conveying a base material by using a plurality of guide rolls, film formation is performed by atomic layer deposition by outputting precursor gases to the base material by a plurality of ALD heads. The ALD heads are disposed so as to individually face the guide rolls so that the precursor gases are locally output to the base material. The amount of the precursor gases used is reduced more than that in a related art, and the variety of kinds of the usable precursor gases is widened. | 06-30-2011 |
20110200749 | FILM DEPOSITION APPARATUS AND METHOD - A chamber includes at its upper section a gas inlet from which to introduce a deposition gas. The inner walls of the chamber are covered by a cylindrical liner, and the chamber houses a susceptor assembly on which to place a semiconductor substrate. The liner includes a barrel section inside which the susceptor assembly is placed; a head section that is located right below the gas inlet and smaller in horizontal cross-sectional area than the barrel section; and a stepped section that connects the barrel section and the head section. The susceptor assembly is formed by fixing a ring plate to a susceptor via support posts. The ring plate covers the periphery of the stepped section of the liner. By the deposition gas flowing in a downward direction from the gas inlet into the chamber, a crystalline film is formed on the substrate positioned on the susceptor assembly. | 08-18-2011 |
20110268879 | APPARATUS AND METHOD FOR HIGH-THROUGHPUT ATOMIC LAYER DEPOSITION - Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a downwardly sloping process tunnel, extending in a transport direction and bounded by at least two tunnel walls. Both walls are provided with a plurality of gas injection channels, whereby the gas injection channels in at least one of the walls, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a series of tunnel segments that—in use—comprise successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively. The downward slope of the process tunnel enables gravity to drive the floatingly supported substrates through the successive segments, causing the atomic layer deposition of a film onto the substrates. | 11-03-2011 |
20110300297 | MULTI-WAFER ROTATING DISC REACTOR WITH INERTIAL PLANETARY DRIVE - Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween. | 12-08-2011 |
20110318489 | SUBSTRATE PROCESSING APPARATUS, PROCESSING TUBE, SUBSTRATE HOLDER, FIXING PART OF THE SUBSTRATE HOLDER, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE MANUFACTURING METHOD - There is provided a substrate processing apparatus, including: a substrate holder that holds a plurality of substrates (wafers) in a state of being arranged in a lateral direction (approximately in a horizontal direction) approximately in a vertical posture; a processing tube that houses the substrate holder; a throat side sealing part (throat side mechanical flange part) that air-tightly closes an opening part of the processing tube; a rotation part that rotates the substrate holder in a peripheral direction of the substrates, with an arrangement direction (a direction in which the substrates are held) of the plurality of substrates as a rotation axis, wherein the substrate holder includes a fixing part (movable holding part) and a fixture holding part for fixing the substrates approximately in a vertical posture. | 12-29-2011 |
20120027936 | EXHAUST FOR CVD REACTOR - A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor includes a reaction chamber having an interior, a gas inlet manifold communicating with the interior of the chamber, an exhaust system including an exhaust manifold having a passage and one or more ports, and one or more cleaning elements mounted within the chamber. The gas inlet manifold can admit process gasses to form a deposit on substrates held within the interior. The passage can communicate with the interior of the chamber through the one or more ports. The one or more cleaning elements are movable between (i) a run position in which the cleaning elements are remote from the one or more ports and (ii) a cleaning position in which the one or more cleaning elements are engaged in the one or more ports. | 02-02-2012 |
20120040097 | ENHANCED WAFER CARRIER - A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets. | 02-16-2012 |
20120088030 | FILM FORMING APPARATUS, FILM FORMING METHOD, AND RECORDING MEDIUM - A film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas a vacuum ejecting mechanism; and a rotary mechanism rotating the loading table relative to the reaction gas supplying units and the separating areas. | 04-12-2012 |
20120225206 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas cushion plate comprising a plurality of openings configured to create a gas cushion adjacent the gas cushion plate so that a substrate can be moved through a processing chamber. | 09-06-2012 |
20120225207 | Apparatus and Process for Atomic Layer Deposition - Provided is a substrate processing apparatus, such as an atomic layer deposition (ALD) chamber, comprising a substrate support on a swinging support arm and, optionally, a plurality of exhaust ducts located adjacent to but a distance from the gas distribution plate. One or more of the substrate processing apparatus may be a component of an integrated cluster tool to process multiple substrates concurrently. | 09-06-2012 |
20120244282 | VAPOR DEPOSITION SOURCE - A vapor deposition source for vaporizing a material has a body forming an interior chamber, at least one crucible in the interior chamber, and a divider that divides the interior chamber into a transport channel and a distribution channel. To deposit vapor on an underlying substrate, the deposition source also has a plurality of exit orifices formed in the body adjacent to the distribution channel. The divider has a set of divider apertures between the transport channel and the distribution channel. This divider aperture is positioned generally symmetrically within the interior chamber. | 09-27-2012 |
20120282402 | Coating Methods and Apparatus - An apparatus deposits a coating on a part. The apparatus comprises a chamber and a sting assembly for carrying the part. The sting assembly is shiftable between: an inserted condition where the sting assembly holds the part within the chamber for coating; and a retracted condition where the sting assembly holds the part outside of the chamber. The apparatus comprises a source of the coating material positioned to communicate the coating material to the part in the inserted condition. The apparatus comprises a thermal hood comprising a first member and a second member. The second member is between the first member and the part when the part is in the inserted condition. The second member is carried by the sting assembly so as to retract with the sting assembly as the sting assembly is retracted from the inserted condition to the retracted condition. | 11-08-2012 |
20120295028 | THIN-FILM FORMATION APPARATUS SYSTEM AND THIN-FILM FORMATION METHOD - A heating chamber representing one of process chambers, in which a heating apparatus for heating a substrate and a substrate transfer apparatus for moving the substrate and the heating apparatus relative to each other are arranged, a ZnO sputtering chamber representing one of the process chambers, in which a sputtering apparatus for forming a thin film on the heated substrate is arranged, and a control device for controlling the substrate transfer apparatus are provided. The substrate transfer apparatus is controlled by the control device such that the substrate and the heating apparatus in the heating chamber continue to move relative to each other when transfer of the substrate from the heating chamber becomes impossible. According to this construction, deformation and thermal crack of the substrate can be prevented. | 11-22-2012 |
20120301614 | Organic Layer Deposition Apparatus, Frame Sheet Assembly for the Organic Layer Deposition Apparatus, and Method of Manufacturing Organic Light Emitting Display Device Using the Frame Sheet Assembly - An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a frame sheet assembly for the organic layer deposition apparatus. | 11-29-2012 |
20120301615 | THIN FILM-MANUFACTURING APPARATUS,THIN FILM-MANUFACTURING METHOD,AND SUBSTRATE-CONVEYING ROLLER - A conveyance system | 11-29-2012 |
20120315394 | FILM FORMING APPARATUS, FILM FORMING METHOD, METHOD FOR OPTIMIZING ROTATIONAL SPEED, AND STORAGE MEDIUM - A film forming apparatus for forming a film on an object includes: a processing container; gas supply means, having gas jet ports, respectively; a holding means for holding the object; a drive mechanism for moving the holding means relative to the gas jet ports; and a control means which, when repeating P times a cycle, consisting of a supply period for supplying a gas and a supply stop period during which the supply of the gas is stopped, performs control so that as viewed from the center of the object, a gas supply starting position is sequentially shifted in the circumferential direction of the object for every cycle in such a manner that the entire circumference of the object to be processed is divided into K segments (K=P), K being an arbitrary division number, and the gas supply starting position is shifted by one segment for every cycle. | 12-13-2012 |
20120315395 | THIN-FILM MANUFACTURING EQUIPMENT, METHOD FOR MANUFACTURING THIN FILM, AND METHOD FOR MAINTAINING THIN-FILM MANUFACTURING EQUIPMENT - The present invention aims to provide thin-film manufacturing equipment, a method for manufacturing a thin film, and a method for maintaining thin-film manufacturing equipment, which are capable of depositing with high productivity even in the occurrence of unexpected failure. Thin-film manufacturing equipment provided herein includes a group of deposition chambers that is a collection of deposition chambers each provided with a deposition compartment, in which a thin film is deposited on a substrate, a movable chamber designed to convey a substrate, and more than two substrate temporary holding devices each for temporarily holding a substrate, wherein the movable device is designed to deliver and receive the substrate to and from each of the deposition chambers and designed to perform at least one action selected from the group consisting of receiving and discharging of the substrate from and to each of the more than two substrate temporary holding devices. | 12-13-2012 |
20120321787 | ROTATION SYSTEM FOR THIN FILM FORMATION AND METHOD THEREOF - System and method for forming one or more layers of one or more materials on one or more substrates. The system includes a rotating shell, a susceptor component supported by the rotating shell, and a driving component below the susceptor component and configured to drive the rotating shell and the susceptor component to rotate around a susceptor axis. Additionally, the system includes one or more holder gears located on the susceptor component and configured to rotate around the susceptor axis with the susceptor component and support the one or more substrates, and a central gear engaged to the one or more holder gears and configured to cause the one or more holder gears to rotate around one or more holder axes respectively if the one or more holder gears rotate around the susceptor axis. The susceptor axis is different from the one or more holder axes. | 12-20-2012 |
20120321788 | ROTATION SYSTEM FOR THIN FILM FORMATION - A system for forming one or more layers of material on one or more substrates is disclosed. The system includes a susceptor that rotates around a central susceptor axis. One or more holder gears are located on the susceptor. The holder gears may rotate around the central susceptor axis with the susceptor. Teeth of at least two adjacent holder gears at least partially overlap without touching. A central gear engaged to the holder gears may cause the holder gears to rotate around holder axes of the respective holder gears while the holder gears rotate around the central susceptor axis. | 12-20-2012 |
20130064977 | METHOD AND APPARATUS FOR DEPOSITING ATOMIC LAYERS ON A SUBSTRATE - Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. | 03-14-2013 |
20130084391 | NOZZLE UNIT, AND APPARATUS AND METHOD FOR TREATING SUBSTRATE WITH THE SAME - Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit. | 04-04-2013 |
20130115373 | ROTATING TYPE THIN FILM DEPOSITION APPARATUS AND THIN FILM DEPOSITION METHOD USED BY THE SAME - A rotating type thin film deposition apparatus having an improved structure that allows continuous deposition, and a thin film deposition method used by the rotating type thin film deposition apparatus are provided. The rotating type thin film deposition apparatus includes a deposition device; a circulation running unit that runs a deposition target on a circulation track via a deposition region of the deposition device; and a support unit that supports the deposition target and moves along the circulation track. Thin layers can be precisely and uniformly formed on the entire surface of a deposition target, and since deposition is performed while a plurality of deposition targets move along a caterpillar track, a working speed is faster compared to a method involving a general reciprocating motion, and the size of the thin film deposition apparatus can be reduced. | 05-09-2013 |
20130164445 | Self-Contained Heating Element - Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described. | 06-27-2013 |
20130330474 | Apparatus for Coating a Substrate - The invention relates to an apparatus ( | 12-12-2013 |
20130337172 | REACTOR IN DEPOSITION DEVICE WITH MULTI-STAGED PURGING STRUCTURE - Embodiments relate to a structure of reactors in a deposition device that enables efficient removal of excess material deposited on a substrate by using multiple-staged Venturi effect. In a reactor, constriction zones of different height are formed between injection chambers and an exhaust portion. As purge gas or precursor travels from injection chambers to the exhaust portion and passes the constriction zones, the pressure of the gas drops and the speed of the gas increase. Such changes in the pressure and speed facilitate removal of excess material deposited on the substrate. | 12-19-2013 |
20130344244 | METHOD FOR CLEANING GAS CONVEYING DEVICE, AND METHOD AND REACTION DEVICE FOR FILM GROWTH - A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device. The method comprises that a) a cleaning device is provided and separably installed on the support device, said cleaning device comprising a surface which is facing to the gas conveying surface and on which multiple scraping structures are distributed; b) a rotation drive device is provided, which is connected to the support device and can selectively drive the support device to rotate; c) the position of the cleaning device is adjusted so that the scraping structures contact with, at least in part, the gas conveying surface of the gas conveying device; and d) the rotation drive device is rotated to drive the cleaning device to rotate, and the scraping structures contact the gas conveying surface and remove attachments from the gas conveying surface. | 12-26-2013 |
20140030435 | EVAPORATION UNIT AND VACUUM COATING APPARATUS - Vacuum coating apparatus for coating a web includes a first rotatable coating drum and a second rotatable coating drum disposed parallel to the first drum with a gap formed between the first and the second coating drums for transporting at least one web. A first evaporator has at least one evaporation source for generating a first evaporation beam, wherein the first evaporator is arranged next to the first coating drum. A second evaporator has at least one evaporation source for generating a second evaporation beam, wherein the second evaporator is arranged next to the second coating drum. The first and the second evaporators are inclined relative to each other. | 01-30-2014 |
20140072711 | REEL TO REEL DEPOSITION PROCESSING - A system for reel-to-reel deposition of material onto flexible materials includes a reaction chamber, a feed reel arranged in the reaction chamber, the feed reel configured to support at least one continuous length of flexible material, a receiving reel arranged in the reaction chamber separate from the feed reel, the receiving reel configured to receive the flexible material, and at least one deposition target arranged in the reaction chamber, the deposition target configured to release vaporized target material for deposition onto surfaces of the flexible material. | 03-13-2014 |
20140134332 | Distribution of Gas Over A Semiconductor Water in Batch Processing - A method and apparatus to evenly distribute gas over a wafer in batch processing. Several techniques are disclosed, such as, but not limited to, angling an injector to distribute gas towards a proximate edge of the wafer, and/or reducing the amount of overlap in the center of the wafer of gas from subsequent gas injections. | 05-15-2014 |
20140170319 | INJECTOR FOR FORMING FILMS RESPECTIVELY ON A STACK OF WAFERS - An injector for forming films respectively on a stack of wafers is provided. The injector includes a plurality of hole structures. Every adjacent two of the wafers have therebetween a wafer spacing, and each of the wafers has a working surface. The hole structures respectively correspond to the respective wafer spacings. The working surface and a respective hole structure have therebetween a parallel distance. The parallel distance is larger than a half of the wafer spacing. A wafer processing apparatus and a method for forming films respectively on a stack of wafers are also provided. | 06-19-2014 |
20140220248 | APPARATUS AND PROCESS FOR THE SURFACE TREATMENT OF CARBON FIBERS - A method for surface treating a carbon-containing material in which carbon-containing material is reacted with decomposing ozone in a reactor (e.g., a hollow tube reactor), wherein a concentration of ozone is maintained throughout the reactor by appropriate selection of at least processing temperature, gas stream flow rate, reactor dimensions, ozone concentration entering the reactor, and position of one or more ozone inlets (ports) in the reactor, wherein the method produces a surface-oxidized carbon or carbon-containing material, preferably having a surface atomic oxygen content of at least 15%. The resulting surface-oxidized carbon material and solid composites made therefrom are also described. | 08-07-2014 |
20150050421 | METHOD OF DEPOSITING AN ATOMIC LAYER AND ATOMIC LAYER DEPOSITION APPARATUS - A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer. | 02-19-2015 |
20150140212 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - There is provided a film-forming apparatus including a roll-to-roll mechanism and a heating unit. The roll-to-roll mechanism is configured to transport a film-forming target and includes a tensile force relaxation unit configured to relax a tensile force applied to the transported film-forming target. The heating unit is configured to heat the film-forming target transported by the roll-to-roll mechanism. | 05-21-2015 |
20150140213 | PRODUCTION OF GLANCING ANGLE DEPOSITED FILMS - Method and apparatus for producing glancing angle deposited thin films. There is a source of collimated vapour flux, the source of collimated vapour flux having a deposition field; and a travelling substrate disposed within the deposition field of the source of collimated vapour flux, the collimated vapor flux being collimated at a defined non-zero angle to a normal to the travelling substrate. | 05-21-2015 |
20150368045 | TRANSPORTING DEVICE, PROCESSING ARRANGEMENT AND COATING METHOD - In various embodiments, a transporting device for transporting a substrate in a process chamber is provided. The transporting device includes a guiding rail arrangement having two guiding rails for mounting a multiplicity of bars between the two guiding rails. The two guiding rails form a closed path of movement along which the multiplicity of bars are guided. The transporting device further includes the multiplicity of bars that are mounted in the guiding rail arrangement, and a drive device for pushing at least one bar of the multiplicity of bars in such a way that, in a transporting region of the guiding rail arrangement, in each case multiple bars of the multiplicity of bars are pushed against one another and the bars that have been pushed against one another move along the path of movement in the transporting region. | 12-24-2015 |
20160010201 | VAPOR DEPOSITION UNIT AND VAPOR DEPOSITION DEVICE | 01-14-2016 |
20160130695 | VAPOR PHASE GROWTH APPARATUS - Disclosed is a rotation/revolution type vapor phase growth apparatus that allows for automatic meshing between an external gear and an internal gear. In the apparatus, on tooth side surfaces of at least one kind of a plurality of external gear members provided rotatably in a circumferential direction of an outer periphery of a disk-shaped susceptor and a ring-shaped fixed internal gear member having an internal gear to mesh with the external gear members, there is provided a guide slope that abuts against a tooth side surface of the other kind of the gear member(s) to guide both kinds of the gear members into a meshed state when both kinds of the gear members move from a non-meshed state to the meshed state. | 05-12-2016 |