Entries |
Document | Title | Date |
20080206123 | SILICON FEEDSTOCK FOR SOLAR CELLS - The present invention relates to silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells where the silicon feedstock contains between 0.2 and 10 ppma boron and between 0.1 and 10 ppma phosphorus distributed in the material. The invention further relates to directionally solidified silicon ingot or thin silicon sheet or ribbon for making wafers for solar cells containing between 0.2 ppma and 10 ppma boron and between 0.1 ppma and 10 ppma phosphorus distributed in the ingot, said silicon ingot having a type change from p-type to n-type or from n-type to p-type at a position between 40 and 99% of the ingot height or sheet of ribbon thickness and having a resistivity profile described by an exponential curve having a starting value between 0.4 and 10 ohm cm and where the resistivity value increases towards the type change point. Finally the invention relates to a method for producing silicon feedstock for producing directionally solidified silicon ingots, thin sheets and ribbons for the production of silicon wafers for PV solar cells. | 08-28-2008 |
20080213156 | Method For The Manufacture Of A Reactor To Separate Gases - Method for manufacturing a reactor for separating a gas containing silicon, comprising the following stages: preparation of a substantially tubular reactor blank with an inner wall and an outer wall, and application of a separating layer containing a powdery separating medium, at least onto the inner wall of the reactor blank. The reactor with the separating layer applied thereon offers simple and effective protection of the inner wall from deposited silicon powder. The separating layer and the silicon powder deposited thereon can easily be removed mechanically, without the inner wall being damaged. | 09-04-2008 |
20080241046 | Method and Device for Producing Granulated Polycrystalline Silicon in a Fluidized Bed Reactor - A fluidized bed process for the production of polycrystalline silicon granules supplies, in addition to reaction gas, a gas containing 99.5 to 95 mol. percent hydrogen and 0.5 to 5 mol. percent gaseous silicon compounds, and the reactor wall is maintained at the same or a higher temperature than the reaction zone, such that the deposition of silicon on reactor internals is minimized. | 10-02-2008 |
20080247936 | Method For Producing High Purity Silicon - An object of the present invention is to provide a method for producing a great deal of inexpensive high purity silicon useful in a solar battery. Disclosed is a method for producing the high purity silicon by migrating impurities in molten silicon to slag including the step of feeding an oxidizing agent to the molten silicon together with slag, wherein the oxidizing agent is a material comprising as a primary component at least one of the following materials: alkali metal carbonate, hydrate of alkali metal carbonate, alkali metal hydroxide, alkaline-earth metal carbonate, hydrate of alkaline-earth metal carbonate or alkaline-earth metal hydroxide. | 10-09-2008 |
20080279748 | Silicon and Method for Producing the Same - Method for producing silicon which is suitable as a starting material for producing a silicon melt for the fabrication of silicon blocks or silicon crystals, comprising the following steps: introduction of a gaseous mixture of monosilane and hydrogen into a reactor, thermal degradation of the gaseous mixture with formation of silicon powder, separation of the silicon powder obtained from the gaseous mixture, and mechanical compacting of the separated silicon powder. | 11-13-2008 |
20080292524 | Crucible for the Treatment of Molten Silicon - A crucible for the treatment of molten silicon includes a basic body with a bottom surface and lateral walls defining an inner volume. The basic body comprises at least 65% by weight of silicon carbide, and from 12 to 30% by weight of a constituent selected from silicon oxide or nitride. Moreover, the basic body comprises at least one silicon oxide and/or nitride coating, at least on the surfaces defining the inner volume of the crucible. | 11-27-2008 |
20080311020 | Method for Producing High Purity Silicon - An object of the invention is to provide a method for producing a large amount of inexpensive and high purity silicon useful in a solar battery. The method includes steps of preparing molten silicon, preparing a slag, bringing the molten silicon and the slag into contact with each other, and exposing at least the slag to vacuum pressure. | 12-18-2008 |
20080311021 | Apparatus for pulling single crystal by CZ method - In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method. | 12-18-2008 |
20090004090 | Method for Preparing Granular Polycrystalline Silicon Using Fluidized Bed Reactor - The present invention relates to a method for mass preparation of granular polycrystalline silicon in a fluidized bed reactor, comprising (a) a reactor tube, (b) a reactor shell encompassing the reactor tube, (c) an inner zone formed within the reactor tube, where a silicon particle bed is formed and silicon deposition occurs, and an outer zone formed in between the reactor shell and the reactor tube, which is maintained under an inert gas atmosphere, and (d) a controlling means to keep the pressure difference between the inner zone and the outer zone being maintained within the range of 0 to 1 bar, thereby capable of maintaining physical stability of the reactor tube and efficiently preparing granular polycrystalline silicon even at a relatively high reaction pressure. | 01-01-2009 |
20090010833 | PROCESS FOR PRODUCING ULTRA-FINE POWDER OF CRYSTALLINE SILICON - A method of producing a fine powder of crystalline silicon. | 01-08-2009 |
20090028773 | METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK - Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock. | 01-29-2009 |
20090047204 | Method and Apparatus for Preparation of Granular Polysilicon - A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state. | 02-19-2009 |
20090060822 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon. | 03-05-2009 |
20090060823 | Reduced Wetting String for Ribbon Crystal - A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees. | 03-05-2009 |
20090060824 | Washing method, washing apparatus for polycrystalline silicon and method of producing polycrystalline silicon - A washing method comprising: cleaning polycrystalline silicon with an acid solution; soaking of the polycrystalline silicon in a soaking bath in which pure water is stored; and measuring an electrical conductivity of the pure water in the soaking bath, wherein, in the soaking, the polycrystalline silicon is immersed in the pure water stored in the soaking bath, and the pure water in the soaking bath is replaced at least once to remove the acid solution remaining on a surface of the polycrystalline silicon; and in the measuring, completion of the soaking is determined based on measured values of the electrical conductivity | 03-05-2009 |
20090074647 | SYSTEM AND METHOD FOR PRODUCING SOLAR GRADE SILICON - A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power. | 03-19-2009 |
20090074648 | PROCESS FOR THE PRODUCTION OF MEDIUM AND HIGH PURITY SILICON FROM METALLURGICAL GRADE SILICON - A process for purifying low-purity metallurgical grade silicon, contains at least one contaminant and obtains a higher-purity solid polycrystalline silicon. The process includes containing a melt of low-purity metallurgical grade silicon in a mold having insulated bottom and side walls, and an open top; solidifying the melt by unidirectional solidification from the open top towards the bottom wall while electromagnetically stirring the melt; controlling a rate of the unidirectional solidification; stopping the unidirectional solidification when the melt has partially solidified to produce an ingot having an exterior shell including the higher-purity solid polycrystalline silicon and a center including an impurity-enriched liquid silicon; and creating an opening in the exterior shell of the ingot to outflow the impurity-enriched liquid silicon and leave the exterior shell which has the higher-purity solid polycrystalline silicon. | 03-19-2009 |
20090074649 | Light-emitting nanoparticles and methods of making same - A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high temperature and elevated pressure. A particular composition prepared by the methods is a passivated silicon nanoparticle composition displaying discrete optical transitions. | 03-19-2009 |
20090130014 | SILICON RECYCLING METHOD, AND SILICON AND SILICON INGOT MANUFACTURED WITH THAT METHOD - In order to efficiently recycle a silicon scrap obtained by cutting a silicon chunk as a raw material silicon for solar batteries, a silicon recycling method of the present invention, according to one aspect, includes the steps of melting a silicon scrap by heating, and immersing a crystallization substrate in molten silicon and depositing silicon on a surface of the crystallization substrate. The step of separating silicon on the surface of the crystallization substrate from the crystallization substrate is preferably included. In addition, a silicon ingot obtained by melting the silicon raw material for solar batteries in a mold and solidifying the same is suitable as the silicon chunk. | 05-21-2009 |
20090136408 | Polycrystalline silicon manufacturing apparatus and manufacturing method - A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports | 05-28-2009 |
20090155158 | High Purity Silicon Production System and Production Method - The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means. | 06-18-2009 |
20090169460 | 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR - The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip. | 07-02-2009 |
20090180944 | Process For Depositing Polycrystalline Silicone - Polycrystalline silicon is prepared by thermally decomposing a reaction gas comprising hydrogen and a silicon-containing gas in a reaction chamber containing heated silicon, depositing additional silicon thereon, and forming an offgas; and
| 07-16-2009 |
20090274607 | Method for purifying silicon - The present invention provides for methods of purifying silicon, methods for obtaining purified silicon, as well as methods for obtaining purified silicon crystals, purified granulized silicon and/or purified silicon ingots. | 11-05-2009 |
20090280050 | Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots - Apparatuses and methods for making a multi-crystalline silicon ingot by directional solidification comprising two or more moveable heat shields located beneath the crucible, the heat shields being opened in a controlled manner to remove heat and produce a high quality silicon ingot. | 11-12-2009 |
20100003183 | Method of purifying metallurgical silicon by directional solidification - The method enables metallurgical silicon to be purified by directional solidification to obtain solar or photovoltaic grade silicone. A crystallization step uses at least one silicon seed, preference of solar grade or even microelectronic grade, having for example a purity substantially equal to or greater than a predetermined purity of the solar-grade silicon. The silicon seed which covers the bottom of the crucible can come from a previous crystallization or be formed by a silicon wafer. The use of a single-crystal or textured multi-crystal seed enables crystallographic orientation of the solar-grade silicon. An intermediate layer of solid metallurgical silicon can be arranged on the silicon seed and a metallurgical silicon feedstock is arranged on the intermediate layer. | 01-07-2010 |
20100015028 | PURIFICATION METHOD - A method for removing one or more substances from a starting material comprising a metal, a semi-metal, a metal compound or a semi-metal compound comprises the steps of mixing fine particles of said starting material with a reagent Y and heating the starting material so as to effect a diffucion interface between the starting material and the reagent Y such that the one or more substances migrate from the nanoparticle to reagent Y. Purified metal or semi-metal particles are thereby produced. The method can be used for the production of photovoltaic grade silicon. | 01-21-2010 |
20100040526 | DEVICE AND METHOD FOR THE PROCESSING OF NON-FERROUS METALS - In a device and a method for the processing of non-ferrous metals for simple and economic reduction of the concentration of impurity elements and/or impurity compounds contained in the non-ferrous metal, it is provided to gas the non-ferrous metal in a processing column with at least one gas at a low pressure, causing the impurity elements and/or impurity compounds to evaporate. | 02-18-2010 |
20100068115 | SILICON RECLAMATION APPARATUS AND METHOD OF RECLAIMING SILICON - A silicon reclamation apparatus with which a large amount of silicon can be easily recovered from a waste slurry is provided. | 03-18-2010 |
20100068116 | METHOD AND APPARATUS FOR PREPARATION OF GRANULAR POLYSILICON - A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state. | 03-18-2010 |
20100086466 | DEPOSITION OF HIGH-PURITY SILICON VIA HIGH-SURFACE AREA GAS-SOLID OR GAS-LIQUID INTERFACES AND RECOVERY VIA LIQUID PHASE - Solid silicon is deposited onto electrically heated deposition plates by the reduction reaction of gaseous trichlorosilane and hydrogen which are mixed and pumped across the surfaces of the plates. The plates can have a number of high-surface area geometries such as concentric cylinders, spirals, or repeating S-shapes. Once the desired amount of silicon has been deposited, the deposition plates are heated to above the melting point of silicon causing the deposited silicon to slide off the plates in the form of a crust due to gravitational force. The plates are left coated with a thin film of liquid silicon which contains any impurities leached from the plates. This film is melted off separately from the main silicon crust to avoid contamination of the latter and the plates are then ready for the next deposition cycle. | 04-08-2010 |
20100135889 | Purification of Materials Non-Electrically Conductive in the Solid State and Electrically Conductive in the Molten State with Electric Induction Power - The present invention is apparatus for, and method of, heating, melting and purifying a material by electric induction heating in a susceptor furnace. Non-electrically conductive solid charge may initially be placed in the furnace. Output frequency from a power source supplying current to one or more induction coils surrounding the furnace is selected to maximize magnetic coupling with the susceptor material in the susceptor furnace to induce eddy current heating in the material. Heat transfers by conduction from the susceptor material to the non-electrically conductive charge placed in the susceptor furnace to melt the charge. Output frequency is reduced as the charge melts and becomes electrically conductive to enhance magnetic coupling with the melt in the furnace. Degassing of impurities from the melt can be achieved by bubbling a gas through the melt while the surface level of the melt is maintained at vacuum. Degassing is enhanced by creating an electromagnetic ripple/wave action that increases the surface area of the melt during the degassing process. | 06-03-2010 |
20100143231 | Method and Apparatus for Manufacturing Silicon Ingot - Provided are a novel method and novel apparatus for manufacturing a silicon ingot that make it possible to reduce manufacturing steps and also reduce required electric power. A method for manufacturing a silicon ingot, including the step of heating and melting, in a crucible, an element which can undergo eutectic reaction with silicon and has a lower eutectic point than the melting point of silicon when made into silicon alloy, and a metallic silicon, thereby generating an alloy melt, and the step of using the eutectic reaction for the alloy melt to subject the silicon to low-temperature solidification refinement, and further producing the silicon ingot from the alloy melt by a pulling method is provided. | 06-10-2010 |
20100202954 | METHOD FOR MANUFACTURING OF SILICON, SILICON, AND SOLAR CELL - The present invention provides a silicon manufacturing method for purifying silicon metal to manufacture solar cell silicon by reducing boron contained as impurities in the silicon metal. The present invention provides a silicon manufacturing method including preparing a mixture containing both silicon in a molten state and a molten salt, introducing a gas containing a chlorine atom into the mixture, and introducing moisture vapor together with the chlorine-atom containing gas. The chlorine-atom containing gas may preferably be a chlorine gas or silicon tetrachloride. The molten salt may preferably be composed of a mixture containing at least silicon dioxide and calcium oxide, and the mixture may additionally contain calcium fluoride. | 08-12-2010 |
20100202955 | Method for Producing Si Bulk Polycrystal Ingot - A method is provided for producing a Si bulk polycrystal ingot with high quality and high homogeneity, which has no significant crystal defects and is free from diffused impurities with a high yield. An upper face of a Si melt is locally cooled by bringing coolant close to a surface of the Si melt from an upper part of a crucible in the crucible containing the Si melt or by inserting the coolant into the Si melt. A dendrite crystal is formed in the vicinity of the surface of the Si melt. Cooling is performed thereafter while maintaining a proper temperature distribution, and a Si bulk crystal is grown from an upper part toward a lower part using a lower face of the dendrite crystal as a fresh growth face. | 08-12-2010 |
20100215561 | Recovery method of silicon slurry - In slicing a crystal bar into silicon wafers, an average about 40% of silicon would be loss due to the widths of slicing wires themselves. The fact that the silicon slurry is discarded as sludge or discarded after recovering silicon carbide particles causes a large waste of cost. If the silicon slurry (40% of silicon) could be recovered as the raw material for growing silicon crystal bars, the production cost would be lowered. The recovery method of silicon slurry according to the present invention could effectively obtain silicon raw material after removing impurities, which could recover the raw material used in solar crystals, further capable of increasing the silicon crystal production and lowering the cost. | 08-26-2010 |
20100215562 | Fluidized Bed Reactor for Production of High Purity Silicon - Methods and apparatus for the production of high purity silicon including a fluidized bed reactor with one or more protective layers deposited on an inside surface of the fluidized bed reactor. The protective layer may be resistant to corrosion by fluidizing gases and silicon-bearing gases. | 08-26-2010 |
20100226844 | METHOD AND APPARATUS FOR PRODUCING GRANULAR SILICON - Silicon granules are produced by chemical vapor deposition on seed particles inside a chamber within a fluidized bed reactor. The chamber contains an obstructing member, or bubble breaker, which is sized and shaped to restrict the growth of bubbles inside the chamber and which has interior passageways through which a heated fluid passes to transfer heat to gas inside the chamber. | 09-09-2010 |
20100239484 | Method for Refining Solar Grade (SoG) Silicon by Using Physical Metallurgy - The present invention discloses a method for physically refining solar grade silicon comprises: firstly, by using a vacuum induction furnace, selecting a high oxidizing crucible to avoid carbon pollution; secondly, conducting the vacuum-pumping during the heating process; thirdly, injecting a protective gas, after the smelting temperature reaches a predetermined temperature, the powerful oxidizing gas (chlorine) is injected into the bottom of the crucible; fourthly, producing chemical reaction with the powerful oxidizing gas and impurity such as Fe—Al—Ca—P—V, so that the reaction resultant is gasified, while the power oxidizing gas stirs with the metallic silicon liquation, and preserving the temperature; fifthly, injecting the refined metallic silicon into a pouring box to enter into a oriented crystallization procedure. The present invention has following advantages: being easy and convenient to be implemented, rapid heating, no pollution, and the purity of the silicon material refined by using the method in the present invention can be graded to 5N or more. | 09-23-2010 |
20100254879 | METHOD FOR REMOVING PHOSPHOROUS AND BORON FROM ALUMINIUM SILICON ALLOY FOR USE IN PURIFYING SILICON - Embodiments of the present invention relate to a process for purifying silicon by removing one or both of phosphorus and boron. | 10-07-2010 |
20100278707 | METHOD FOR RECOVERING SILICON FROM SAWING WASTE - A method for separating and recovering silicon debris from sawing waste is characterized in that it includes the following steps:—treating the sawing waste so as to deoxidize the silicon debris in a manner that reduces their surface energy,—applying to the sawing waste thus treated a flotation method using a flotation liquid and a nonoxidizing flotation gas, and—recovering the silicon debris at the surface of the flotation liquid. | 11-04-2010 |
20100284886 | METHOD FOR MANUFACTURING HIGH PURITY POLYCRYSTALLINE SILICON - An method for manufacturing a high purity polycrystalline silicon is characterized by comprising: supplying a silicon chloride gas from a silicon chloride gas supply nozzle and a zinc gas from a zinc gas supply nozzle into a vertical reactor, and generating downward a polycrystalline silicon agglomerated in an almost tube shape on the leading end part of the silicon chloride gas supply nozzle by the reaction of the silicon chloride gas and the zinc gas. | 11-11-2010 |
20100290972 | PROCESS AND DEVICE FOR THE PRODUCTION OF HIGH-PURITY SILICON USING MULTIPLE PRECURSORS - Using a transformer coupled plasma reactor, it is possible to achieve continuous production of plasma which decomposes precursors containing silicon in order to produce pure silicon powder. The pure silicon powder is then gathered, treated and used to produce ingots of silicon for use in photovoltaics or semiconductors. | 11-18-2010 |
20100290973 | METHOD AND DEVICE FOR PROVIDING LIQUID SILICON - A method for providing liquid silicon comprising the method steps of filling ( | 11-18-2010 |
20100316551 | Method For Pulling A Silicon Single Crystal - The invention relates to a method for pulling a silicon single crystal from a melt which is contained in a crucible, comprising immersion of a seed crystal into the melt; crystallization of the single crystal on the seed crystal by raising the seed crystal from the melt with a crystal pull speed; widening the diameter of the single crystal to a setpoint diameter in a conical section, comprising control of the crystal pull speed in such a way as to induce a curvature inversion of a growth front of the single crystal in the conical section. | 12-16-2010 |
20100329958 | METHOD FOR PRODUCTION OF PURIFIED SILICON - A standard temperature gradient (T | 12-30-2010 |
20100329959 | USE OF ACID WASHING TO PROVIDE PURIFIED SILICON CRYSTALS - A method for purifying silicon wherein silicon is crystallized from a solvent metal. The method comprises the steps of providing a molten liquid containing silicon, a solvent metal and impurities, cooling the molten liquid to form first silicon crystals and a first mother liquor, separating the first silicon crystals from the first mother liquor, contacting the first silicon crystals with compound which will dissolve the first mother liquor and separating the washed crystals from the wash solution. | 12-30-2010 |
20110027159 | APPLICATION METHOD OF SILICON POWDER AND RAW MATERIAL SILICON BRICK WITH GOOD FILLING PROPERTY IN MONO-CRYSTAL FURNACE OR MULTI-CRYSTAL FURNACE (amended) - An application method of silicon powder and raw material silicon brick with good filling property in a mono-crystal or a multi-crystal furnace involves pressing silicon powder having a particle size of 0.1 to 100 micrometers into silicon brick having weighing 0.2 to 2,000,000 grams by cold or hot isostatic pressing, then charging it into a mono-crystal or multi-crystal furnace. The pressure range of cold isostatic pressing is 10 MPa to 800 MPa. The pressure range of hot isostatic pressing is 10 Mpa to 800 Mpa. The temperature range for the method is 30° C. to 1,400° C.; The raw material silicon brick is used as the original raw material of silicon crystal growth in the production of solar cells or semiconductor. | 02-03-2011 |
20110027160 | FLUIDIZED BED REACTOR FOR PRODUCTION OF HIGH PURITY SILICON - Methods and apparatus for the production of high purity silicon including a fluidized bed reactor with one or more protective layers deposited on an inside surface of the fluidized bed reactor. The protective layer may be resistant to corrosion by fluidizing gases and silicon-bearing gases. | 02-03-2011 |
20110081289 | METHOD FOR REGENERATING SILICON FROM SILICON WASTE AND SILICON MANUFACTURED USING THE SAME - A method for regenerating silicon from silicon waste includes: placing and mixing silicon waste, a solvent having pH of approximately 5 to approximately 6, and a surfactant within a container; and injecting air into the container to separate floating matters and precipitates. Accordingly, since silicon is easily separated from the silicon waste, the regeneration yield of silicon is increased. Since the regenerated silicon is recyclable, it may be possible to obtain important substitution effect of high-purity silicon the entire amount of which depends on import. Moreover, environmental pollution may be reduced because the amount of the silicon waste disposed of by burial is decreased. | 04-07-2011 |
20110085960 | Method of manufacturing high-surface-area silicon - A method for synthesis of high surface-area (>100 m | 04-14-2011 |
20110097256 | METHOD FOR PREPARING HIGH-PURITY METALLURGICAL-GRADE SILICON - A method for preparing silicon for photovoltaic use starting from metallurgical-grade silicon, comprising the following steps, performed by means of devices made of materials suitable to prevent silicon contamination: providing a silica powder and a carbon black having a reduced content of boron, phosphorus and metallic impurities and a binding agent; preparing a mixture of silica powder, carbon black and binding agent and preparing pellets with the mixture; subjecting the pellets to a first thermal treatment; subjecting the heat-treated pellets to carbon reduction, so as to obtain silicon in the molten state; subjecting the silicon in the molten state to a first purification; subjecting to directional solidification the silicon in the molten state in a directional solidification furnace, so as to obtain silicon for photovoltaic use. | 04-28-2011 |
20110104035 | METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - The invention relates to a polycrystalline silicon production method. The inventive method involves supplying a gas mixture based on a silicon-containing gas to a reduction reactor via a tube system and precipitating silicon on heated surfaces in such a way that an effluent gas mixture is formed. The silicon precipitation process is simultaneously carried out in at least two reactors which are connected in series by the tube system for transporting the gas mixture. Then, the gas mixture used for the operation of all the reactors is supplied at entry into the first reactor and is continuously transmitted through all the connected in series reactors. | 05-05-2011 |
20110104036 | METHOD AND APPARATUS FOR PURIFYING METALLURGICAL GRADE SILICON BY DIRECTIONAL SOLIDIFICATION AND FOR OBTAINING SILICON INGOTS FOR PHOTOVOLTAIC USE - A method and an apparatus for purification of metallurgical grade silicon by directional solidification and for obtaining silicon ingots for photovoltaic use. The method comprises a preheating step, up to a temperature that is higher than the melting point of silicon, of a quartz crucible ( | 05-05-2011 |
20110135559 | SILICON PURIFICATION METHOD - A silicon purification method includes: loading a base material that is a starting material made of metallic silicon into a graphite crucible, heating and melting all of the base material which is disposed in an acidic inert gas atmosphere, maintaining the molten base material in the graphite crucible, and thereby oxidatively purifying the base material; loading the oxidatively-purified base material into a water-cooled crucible, gradually solidifying the base material after the base material disposed in a high vacuum atmosphere is fully molten, and thereby removing an unsolidified portion; and fully melting the base material which is disposed in a high vacuum atmosphere and in which the unsolidified portion is removed, and maintaining the base material in the water-cooled crucible. | 06-09-2011 |
20110158888 | METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS USING PERIPHERAL SILICON TETRACHLORIDE - Fluidized bed reactor systems and distributors are disclosed as well as processes for producing polycrystalline silicon from a thermally decomposable silicon compound such as trichlorosilane. The processes generally involve reduction of silicon deposits on reactor walls during polycrystalline silicon production by use of a silicon tetrahalide. | 06-30-2011 |
20110189074 | Silcon Production With A Fluidized Bed Reactor Integrated Into A Siemens-Type Process - A fluidized bed reactor and a Siemens reactor are used to produce polycrystalline silicon. The process includes feeding the vent gas from the Siemens reactor as a feed gas to the fluidized bed reactor. | 08-04-2011 |
20110206591 | Plasma Processes for Producing Silanes and Derivatives Thereof - The invention is generally related to process for generating one or more molecules having the formula Si | 08-25-2011 |
20110229399 | Method for the production of polycrystalline silicon - The process for the production of polycrystalline silicon starting from metallurgical silicon, milled up to a predetermined granulometry, implies the reaction of metallurgical silicon with anhydrous hydrogen fluoride (HF), to obtain silicon tetrafluoride (SiF | 09-22-2011 |
20110236291 | SYSTEM FOR PRODUCING SILICON WITH IMPROVED RESOURCE UTILIZATION - The present invention relates to a system for producing silicon, preferably high-purity silicon, particularly solar silicon, and to a method for producing silicon, preferably high-purity silicon, in particular solar silicon, in each case with particularly effective resource utilization and reduced emission of pollutants. | 09-29-2011 |
20110243827 | CLOSED-LOOP SILICON PRODUCTION - A closed loop bromosilane process is provided to provide semiconductor grade silicon through the thermal decomposition of tribromosilane. The resulting silicon tetrabromide byproduct from this thermal decomposition is recycled in a silicon tetrabromide converter to produce converted tribromosilane. | 10-06-2011 |
20110262338 | METHOD AND SYSTEM FOR THE PRODUCTION OF PURE SILICON - A process for producing high-purity silicon includes (1) preparing trichlorosilane by reacting silicon with hydrogen chloride in at least one hydrochlorination process; (2) preparing monosilane by disproportionation of the trichlorosilane to provide a monosilane-containing reaction mixture containing silicon tetrachloride as a by-product; (3) in parallel to (1), reacting silicon tetrachloride obtained as the by-product in (2) with silicon and hydrogen in at least one converting process to produce a trichlorosilane-containing reaction mixture; and (4) thermally decomposing the monosilane into silicon and hydrogen. | 10-27-2011 |
20110280785 | METHODS AND APPARATUS FOR RECOVERY OF SILICON AND SILICON CARBIDE FROM SPENT WAFER-SAWING SLURRY - Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry. | 11-17-2011 |
20110300049 | METHOD FOR SEPARATION OF COMPONENTS FROM A REACTION MIXTURE VIA A CONCENTRATED ACID - In one embodiment, the present disclosure relates generally to a method for recovering an element from a mixture of the element with an ionic halide. In one embodiment, the method includes treating the mixture of the element and the ionic halide with an acidic solution to dissolve the ionic halide, wherein the acidic solution comprises water and an acid and has a pH of less than 1.0 and removing the element from an aqueous solution that results after the treating step. | 12-08-2011 |
20110300050 | Trichlorosilane Vaporization System - A heat exchanger for vaporizing a liquid and a method of using the same are disclosed herein. The heat exchanger includes a housing, a tube, a heater, and a plurality of non-reactive members. The tube is disposed in the interior of the housing and has an inlet and an outlet. The heater is configured to heat the tube. The plurality of non-reactive members are disposed in an interior cavity of the tube in an arrangement such that a plurality of voids are defined between the members and the tube. The arrangement also permits liquid to pass through the voids and travel from the inlet of the tube to the outlet of tube. The plurality of non-reactive members and the tube transfer heat to the liquid as the liquid passes through the plurality of voids in order to vaporize the liquid. | 12-08-2011 |
20120003141 | PROCESS AND APPARATUSES FOR PREPARING ULTRAPURE SILICON - A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed. | 01-05-2012 |
20120063984 | PROCESSES AND AN APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON - In one embodiment, the instant invention includes a method having steps of: feeding a fluidizing gas stream having at least 80 percent of halogenated silicon source gas or mixture of halogenated silicon source gases to fluidize silicon seeds in a reactor, achieving the fluidization of silicon seeds in a reaction zone prior to when the fluidizing gas stream reaches at least 600 degrees Celsius; heating the fluidized silicon seeds residing within the reaction zone to a sufficient reaction temperature to result in more than 50% of the equilibrium conversion for the thermal decomposition reaction in the reaction zone of the reactor; and maintaining the fluidizing gas stream at the sufficient reaction temperature and a sufficient residence time within the reaction zone hereby resulting in more than 50% of the equilibrium conversion for the thermal decomposition reaction in a single stage within the reaction zone to produce an elemental silicon. | 03-15-2012 |
20120070362 | QUANTITATIVE MEASUREMENT OF GAS PHASE PROCESS INTERMEDIATES USING RAMAN SPECTROSCOPY - A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analyzing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon. | 03-22-2012 |
20120100059 | Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor - Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-26-2012 |
20120100060 | REACTOR AND METHOD FOR PRODUCTION OF SILICON - Reactor for producing silicon by chemical vapor deposition, the reactor comprising a reactor body that forms a container, at least one inlet for a silicon-bearing gas, at least one outlet, and at least one heating device as a part of or operatively arranged to the reactor, distinctive in that at least one main part of the reactor, which part is exposed for silicon-bearing gas and which part is heated for deposition of silicon on said part, is produced from silicon. Method for operation of the reactor. | 04-26-2012 |
20120114546 | Hybrid TCS-siemens process equipped with 'turbo charger' FBR; method of saving electricity and equipment cost from TCS-siemens process polysilicon plants of capacity over 10,000 MT/YR - A ‘hybrid’ TCS (Trichlorosilane)-Siemens process is provided to save electricity and initial investment cost from TCS synthesizing process and silicon tetrachloride to TCS converting process in a TCS-Siemens polysilicon plant, whose size is over 10,000 MT/YR of polysilicon. The ‘hybrid’ TCS-Siemens process of the current application is equipped with one direct chlorination FBR (Fluidized Bed Reactor) and one hydro-chlorination FBR. Three different TCS-Siemens processes are compared based on mass balance calculation. The hybrid TCS-Siemens process saves at least 78,000,000Kwhr/year of electricity from TCS generation only from a 10,000 MT/YR polysilicon plant when compared with a ‘Closed Loop TCS-Siemens Process’, which is equipped with only high-pressure, high-temperature operating hydro-chlorination FBRs. | 05-10-2012 |
20120171102 | FLUIDIZED BED REACTOR FOR PRODUCTION OF HIGH PURITY SILICON - Methods and apparatus for the production of high purity silicon including a fluidized bed reactor with one or more protective layers deposited on an inside surface of the fluidized bed reactor. The protective layer may be resistant to corrosion by fluidizing gases and silicon-bearing gases. | 07-05-2012 |
20120177559 | APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING A REDUCED AMOUNT OF BORON COMPOUNDS BY FORMING PHOSPHORUS-BORON COMPOUNDS - The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane. | 07-12-2012 |
20120189527 | PRODUCTION OF POLYCRYSTALLINE SILICON IN SUBSTANTIALLY CLOSED-LOOP PROCESSES THAT INVOLVE DISPROPORTIONATION OPERATIONS - Production of polycrystalline silicon in substantially closed-loop processes and systems is disclosed. The processes and systems generally involve disproportionation of trichlorosilane to produce silane or dichlorosilane and thermal decomposition of silane or dichlorosilane to produce polycrystalline silicon. | 07-26-2012 |
20120207662 | SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water | 08-16-2012 |
20120230903 | METHODS FOR INTRODUCTING A FIRST GAS AND A SECEOND GAS INTO A REACTION CHAMBER - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 09-13-2012 |
20120237429 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - An inner wall | 09-20-2012 |
20120251427 | REACTOR AND METHOD FOR PRODUCTION OF SILICON - Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon. | 10-04-2012 |
20130084233 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-04-2013 |
20130084234 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 04-04-2013 |
20130089488 | APPARATUS AND PROCESS FOR DEPOSITION OF POLYCRYSTALLINE SILICON - The invention relates to an apparatus for deposition of polycrystalline silicon, including a reactor chamber with a reactor wall, at least 20 filament rods and gas inlet orifices for reaction gas in the reactor chamber, wherein each filament rod—except for the filament rods close to the reactor wall—has, at a distance of 150 to 450 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices. The invention further relates to a process for depositing polycrystalline silicon on filament rods in such an apparatus, the gas inlet orifices are used to introduce a silicon-containing gas into the reactor chamber and the filament rods are heated to a temperature at which silicon is deposited thereon. | 04-11-2013 |
20130089489 | METHOD FOR CLEANING BELL JAR, METHOD FOR PRODUCING POLYCRYSTALLINE SILICON, AND APPARATUS FOR DRYING BELL JAR - A bell jar includes a metallic bell jar ( | 04-11-2013 |
20130149228 | METHOD, SYSTEM AND APPARATUS FOR CONTROLLING PARTICLE SIZE IN A FLUIDIZED BED REACTOR - A method, system, and apparatus for controlling the average particle size and the particle size distribution during a fluidized bed process in a fluidized bed reactor. More particularly, this disclosure relates to a method, system, and apparatus for controlling the average silicon particle size and the silicon particle size distribution during the production of high purity silicon. | 06-13-2013 |
20130189177 | METHOD FOR PRODUCING SILICON FINE PARTICLES - A method for producing silicon microparticles comprises: a burning step for burning a mixture including a silicon source and a carbon source in an inert atmosphere; a rapid cooling step for rapidly cooling gas generated by burning the mixture, and for obtaining a composite powder including silicon microparticles and silicon oxide; a heating step for heating the composite powder in an oxidative atmosphere; and a removal step for removing silicon monoxide and silicon dioxide from the heated composite powder. | 07-25-2013 |
20130224099 | METHODS FOR REACTING COMPOUNDS - Shell and tube heat exchangers that include a baffle arrangement that improves the temperature profile and flow pattern throughout the exchanger and/or that are integral with a reaction vessel are disclosed. Methods for using the exchangers including methods that involve use of the exchanger and a reaction vessel to produce a reaction product gas containing trichlorosilane are also disclosed. | 08-29-2013 |
20130236387 | Methods and Apparatus for Recovery of Silicon and Silicon Carbide from Spent Wafer-Sawing Slurry - Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry. | 09-12-2013 |
20130243683 | METHOD FOR THE PRODUCTION OF HIGH-PURITY SILICON - A method for producing high-purity silicon is described. SiCl4 is produced from Si02-containing starting materials in a carbochlorination process, and the high-purity silicon is obtained from said SiCl4 in further steps of the method. No elemental silicon is added in any of the steps, resulting a particularly efficient and inexpensive method. | 09-19-2013 |
20140017156 | METHOD FOR PRODUCING SILICON USING MICROWAVE, AND MICROWAVE REDUCTION FURNACE - A method for producing silicon using microwave and a microwave reduction furnace for use therewith are disclosed, with which it is possible to quickly reduce silica to quickly produce silicon. A material of a mixture of a silica powder and a graphite powder of a mixture of a silica powder, a silicon carbide powder and a graphite powder is set in a refractory chamber. Then, the material set in the chamber is irradiated with microwave. The graphite powder absorbs a microwave energy to increase the temperature, after which silica and graphite react with each other to further increase the temperature while producing silicon carbide, and the heated silica and silicon carbide react with each other. SiO produced through this reaction and silicon carbide are allowed to react with each other, thereby producing high-purity silicon. | 01-16-2014 |
20140127116 | Gas Distribution Arrangement for a Fluidized Bed - Embodiments provide a gas distribution arrangement, a device for handling a chemical reaction comprising such a gas distribution arrangement and a method of providing a chemical reaction chamber with a gas. The distribution arrangement comprises a distribution plate for separating a chemical reaction chamber from a gas inlet area and having a first side arranged to face the chemical reaction chamber and a second side arranged to face the gas inlet area and comprising a set of through holes stretching between the first and the second side, where the first side of the plate comprises a first material surrounding the holes and having a first thermal conductivity, and the plate also comprises a second material forming a base structure also surrounding the holes and having a second thermal conductivity. | 05-08-2014 |
20140134091 | Deposition Cartridge for Production Materials via the Chemical Vapor Deposition Process - An electrically heated deposition cartridge for use in the production of materials via the chemical vapor deposition process that has (i) a higher ratio of surface area to volume than a seed rod pair, (ii) a higher ratio of starting effective deposition surface area to final effective deposition surface area than a seed rod pair, and (iii) a higher ratio of effective deposition surface area to gross surface area than a basic deposition plate, which are achieved by reaching and maintaining the desired temperatures on all desired surfaces of the deposition cartridge, which in turn is achieved by distribution of the desired amount of current through all desired cross-sectional areas of the deposition cartridge. | 05-15-2014 |
20140234198 | ETCHING METHOD AND METHOD FOR PERFORMING SURFACE PROCESSING ON SOLID MATERIAL FOR SOLAR CELL - Provided is an etching method including: (1) bringing a material containing at least one organic compound having an N—F bond into contact with the surface of a solid material; and (2) a step of heating the solid material; whereby etching can be performed safely and in a simple manner, at a higher etching rate, without the use of a high-environmental-load gas that causes global warming or highly reactive and toxic fluorine gas or hydrofluoric acid. The etching method may further include: (3) a step of exposing the solid material to light from the side of the material containing at least one organic compound having an N—F bond; and (4) a step of removing the material containing at least one organic compound having an N—F bond together with the residue remained between said material and the solid material. In particular, performing heating at a high temperature and applying light irradiation make it possible to form inverted pyramid-shaped recesses that are suitable for applying light-trapping and/or anti-reflection processing to the surface of the solid material for a solar cell. | 08-21-2014 |
20140335008 | Method and Apparatus for Preparation of Granular Polysilicon - A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state. | 11-13-2014 |
20150104369 | POLYSILICON TRANSPORTATION DEVICE AND A REACTOR SYSTEM AND METHOD OF POLYCRYSTALLINE SILICON PRODUCTION THEREWITH - A method and system for reduction or mitigation of metal contamination of polycrystalline silicon are disclosed. A conveyance device comprising a flexible synthetic resin tube having an inner surface at least partially coated with an inner layer comprising elastomeric microcellular polyurethane is disclosed for use in fluidized bed reactor operations associated with manufacture and product handling procedures for ultra pure granular polysilicon. Use of the conduit to effect passage of the polysilicon mitigates foreign metal contact contamination from sources otherwise typically present in such manufacturing units. | 04-16-2015 |
20150110701 | BIOGENIC SILICA AS A RAW MATERIAL TO CREATE HIGH PURITY SILICON - A low cost process is provided for creating high purity silicon from agricultural waste, particularly rice hull ash. The process uses a series of chemical and thermal steps to yield high purity silica while using less energy and more efficient chemical processes. The high purity silicon features fewer impurities that negatively affect the use of high purity for PV cells and reduces capital and operating costs of processes to yield ultra-pure silicon. | 04-23-2015 |
20150307362 | NANOMETER-SIZE SILICON MATERIAL AND NEGATIVE-ELECTRODE ACTIVE MATERIAL, AND PRODUCTION PROCESS FOR THE SAME AND ELECTRIC STORAGE APPARATUS - A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm | 10-29-2015 |
20150315028 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 11-05-2015 |
20150315029 | PRODUCTION OF POLYCRYSTALLINE SILICON BY THE THERMAL DECOMPOSITION OF SILANE IN A FLUIDIZED BED REACTOR - Processes for producing polycrystalline silicon by thermal decomposition of silane are disclosed. The processes generally involve thermal decomposition of silane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes. | 11-05-2015 |
20160067665 | A FLUIDIZED BED REACTOR AND A PROCESS USING SAME TO PRODUCE HIGH PURITY GRANULAR POLYSILICON - The present invention relates to a fluidized bed reactor, comprising a reaction tube, a distributor and a heating device, the reaction tube and the distributor at the bottom of the reaction tube composing a closed space, the distributor comprising a gas inlet and a product outlet, and the reaction tube comprising a tail gas outlet and a seed inlet at the top or upper part respectively, characterized in that the reaction tube comprises a reaction inner tube and a reaction outer tube, and the heating device is an induction heating device placed within a hollow cavity formed between the external wall of the reaction inner tube and the internal wall of the reaction outer tube, wherein the hollow cavity is filled with hydrogen, nitrogen or inert gas for protection, and is able to maintain a pressure of about 0.01 to about 5 MPa; and also to a process of producing high purity granular polysilicon using the reactor. The fluidized bed reactor according to the present invention uses induction heating to heat directly the silicon particles inside the reaction chamber, such that the temperature of the reaction tube is lower than that inside the reaction chamber, which accordingly avoids deposition on the tube wall and results in more uniform heating, and thus is useful for large diameter fluidized bed reactors with much increased output for a single reactor. | 03-10-2016 |
20180021981 | METHOD FOR RECOVERING SILICON PARTICLES AND ABRASIVE GRAINS FROM WASTED ABRASIVE SLURRY | 01-25-2018 |