Class / Patent application number | Description | Number of patent applications / Date published |
423345000 | Of carbon (i.e., silicon carbide) | 68 |
20080213155 | Method for siliconizing carbon-containing Materials - A method for treating workpieces that consist of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the steps: Preheating porous carbon workpieces under inert gas to the selected operating temperature T | 09-04-2008 |
20090081106 | FIRING SUPPORT FOR CERAMICS AND METHOD FOR OBTAINING SAME - The invention relates to a firing support for ceramics formed from a carbon substrate at least partially covered by a coating based on silicon carbide (SiC), said coating additionally adhering to said substrate. The invention also relates to a process for obtaining such a support. | 03-26-2009 |
20090142247 | Chemical treatment to reduce machining-induced sub-surface damage in semiconductor processing components comprising silicon carbide - Method of removing damaged silicon carbide crystalline structure from the surface of a silicon carbide component. The method comprises at least two liquid chemical treatment processes, where one treatment converts silicon carbide to silicon oxide, and another treatment removes silicon oxide. The liquid chemical treatments are typically carried out at a temperature below about 100° C. The time period required to carry out the method is generally less than about 100 hours. | 06-04-2009 |
20090155157 | Process for aftertreating carbon black - The invention relates to a process for aftertreating carbon black, wherein the carbon black is subjected to a carrier gas flow in a fluidized bed apparatus in the lower region of the apparatus, an additional gas stream is introduced into the fluidized bed apparatus, and the carbon black is aftertreated in the fluidized bed which arises. | 06-18-2009 |
20090169458 | METHOD OF PRODUCING SILICON CARBIDE - A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions. | 07-02-2009 |
20090202414 | Method of manufacturing sub-micron silicon-carbide powder and composition for manufacturing thereof - A method of manufacturing a silicon carbide powder with submicron size of powder particles wherein a homogeneous reactant mixture comprising a source of silicone, a source of carbon, and polytetrafluoroethylene is locally preheated in a sealed reaction chamber filled with an inert gas under pressure of 20 atm to 30 atm to a temperature sufficient to initiate an exothermic self-propagating reaction ranges from 650K to 900K. In the aforementioned homogeneous reactant mixture, the carbon source is used in the amount from 63 wt % to 68%, the silicon source is used in the amount of from 20 wt. % to 25 wt. %%, and the activated additive is used in the amount of from 8 wt. % to 15 wt. % per 100% of the entire homogeneous reactant mixture. | 08-13-2009 |
20090263306 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, WIRING SUBSTRATE, AND SILICON CARBIDE MANUFACTURING METHOD - A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less. | 10-22-2009 |
20090304567 | CERAMIC MATERIALS CONTAINING SPHERICAL SHAPED CARBON PARTICLES - Ceramic materials with a matrix which contains at least one carbide, at least one carbide-forming element and carbon, and which furthermore contain a dispersed phase of carbon particles with spherical shape and an average diameter of 0.2 μm to 800 μm, a process for their production and their use for thermal insulation, as a protective layer in ceramic armoring against mechanical action, or as a friction layer in brake disks or clutch disks. | 12-10-2009 |
20090324478 | Method for Making Silicon-Containing Products - A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove non-silica minerals and metal while adjusting the mole ratio of fixed carbon to silica in the resultant product. The carbon and silica are intimately mixed on a micron or submicron scale and are characterized by high purity and reactivity, small particle size, high porosity, and contain volatile carbon that can be used as a source of energy for the production of silicon-containing products from the carbon-silica products. High purity silicon-containing products made from the carbon-silica products of the invention are also disclosed. | 12-31-2009 |
20100028240 | PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible ( | 02-04-2010 |
20100061914 | GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE - In the growth of a SiC boule, a growth guide is provided inside of a growth crucible that is charged with SiC source material at a bottom of the crucible and a SiC seed crystal at a top of the crucible. The growth guide has an inner layer that defines at least part of an opening in the growth guide and an outer layer that supports the inner layer in the crucible. The opening faces the source material with the seed crystal positioned at an end of the opening opposite the source material. The inner layer is formed from a first material having a higher thermal conductivity than the second, different material forming the outer layer. The source material is sublimation grown on the seed crystal in the growth crucible via the opening in the growth guide to thereby form the SiC boule on the seed crystal. | 03-11-2010 |
20100086463 | METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS - A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method. | 04-08-2010 |
20100092366 | WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME - A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C. | 04-15-2010 |
20100124526 | Method of and apparatus for synthesizing highly oriented, aligned carbon nanotubes from an organic liquid - A method capable of synthesizing carbon nanotubes at low cost and large quantities, an apparatus usable for carrying out the method, and carbon nanotubes densely aligned on and firmly bonded to a Si substrate over, and oriented perpendicular to, an entire surface thereof are provided. Highly oriented, aligned carbon nanotubes are synthesized from an organic liquid by forming a substrate with a buildup thereon of a thin film or fine insular particles composed of at least one metallic element; exposing the substrate ( | 05-20-2010 |
20100239482 | METHOD OF PRODUCING GAS BARRIER LAYER, GAS BARRIER FILM FOR SOLAR BATTERIES AND GAS BARRIER FILM FOR DISPLAYS - A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge. | 09-23-2010 |
20100239483 | Diamond-Bonded Bodies and Compacts with Improved Thermal Stability and Mechanical Strength - Thermally stable diamond-bonded compacts include a diamond-bonded body having a thermally stable region extending a distance below a diamond-bonded body surface. The thermally stable region comprises a matrix first phase of bonded together diamond crystals, and a second phase interposed within the matrix phase. At least some population of the second phase comprises a reaction product formed between an infiltrant material and the diamond crystals at high pressure/high temperature conditions. The diamond bonded body further includes a polycrystalline diamond region that extends a depth from the thermally stable region and has a microstructure comprising a polycrystalline diamond matrix phase and a catalyst material disposed within interstitial regions of the matrix phase. The compact includes a substrate attached to the diamond-bonded body. | 09-23-2010 |
20100254877 | METHOD FOR PRODUCTION OF SILICON CARBIDE POWDER - A liquid mixture is prepared by using a liquid phenolic resin (PL-2818) serving as a carbon source. While an inert gas is introduced into the liquid mixture, a released gas is discharged. Then, the liquid mixture is dried in a reduced-pressure atmosphere, and thereby the nitrogen dissolved in the liquid mixture can be reduced. In this way, the amount of nitrogen content after burning can be reduced. | 10-07-2010 |
20100284885 | Recovery Of Silicon And Silicon Carbide Powder From Kerf Loss Slurry Using Particle Phase-Transfer Method - Silicon and silicon carbide (SiC) are recovered from kerf loss slurries using two-staged particle phase-transfer method. In the first stage, first sample, which is prepared from kerf loss slurries with silicon content being higher than SiC content, is mixed with water and oil to form first mixture, which is settled to form a water and an oil phase. The first product obtained by centrifugation from water phase has a high Si content. In the second stage, the first product is mixed with water and another oil to form the second mixture which is separated thereby to obtain the second product from water phase. The second product is the preferred silicon powder. Besides, another product, i.e. recovered SiC, is obtained by centrifugation from oil phase of the first stage. Furthermore, if silicon content is lower than SiC content, the first stage is repeated using the first product. | 11-11-2010 |
20110002834 | Apparatus for Producing Silicone Carbide Articles and Articles Made Therewith - Method for treatment of workpieces of porous carbon material with liquid silicon with the formation of silicon carbide, comprising the following steps: Preheating of porous carbon workpieces under an inert gas to a selected operating temperature T | 01-06-2011 |
20110059002 | METHODS AND APPARATUS FOR RECOVERY OF SILICON AND SILICON CARBIDE FROM SPENT WAFER-SAWING SLURRY - Methods, systems, and apparatus are disclosed herein for recovery of high-purity silicon, silicon carbide and PEG from a slurry produced during a wafer cutting process. A silicon-containing material can be processed for production of a silicon-rich composition. Silicon carbide and PEG recovered from the silicon-containing material can be used to form a wafer-saw cutting fluid. The silicon-rich composition can be reacted with iodine containing compounds that can be purified and/or used to form deposited silicon of high purity. The produced silicon can be used in the photovoltaic industry or semiconductor industry. | 03-10-2011 |
20110059003 | METHODS OF GROWING A SILICON CARBIDE EPITAXIAL LAYER ON A SUBSTRATE TO INCREASE AND CONTROL CARRIER LIFETIME - A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs. | 03-10-2011 |
20110135557 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 06-09-2011 |
20110135558 | PROCESS FOR PRODUCING SILICON CARBIDE - A process for producing porous silicon carbide comprising mixing particles of silicon carbide reactant with particles of carbon, and calcining the mixture in an atmosphere comprising molecular oxygen at a temperature in excess of 950° C., wherein the silicon carbide:carbon mass ratio in the mixture is in the range of from 5:1 to 1:10. | 06-09-2011 |
20110150741 | PRODUCTION OF SILICON BY REACTING SILICON OXIDE AND SILICON CARBIDE, OPTIONALLY IN THE PRESENCE OF A SECOND CARBON SOURCE - The invention relates to a method for producing silicon by reacting silicon oxide at an elevated temperature, silicon carbide and, optionally, a second carbon source being added to the reaction mixture. The invention further relates to a composition that can be used in the disclosed method. The essential part of the invention is the use of silicon carbide as a reaction initiator and/or reaction accelerator during the production of silicon or, alternatively, in nearly equimolar amounts for the production of silicon. | 06-23-2011 |
20110171099 | PROCESS FOR MANUFACTURING A POROUS SIC MATERIAL - The invention relates to a process for obtaining a porous material made of recrystallized SiC, especially in the form of a structure for filtering a particulate-laden gas, starting from at least two powders of fine and coarse SiC particles, blended with an organic material comprising an organic pore former and/or a binder, in suitable proportions and in the presence of a sufficient amount of a solvent, such as water, so as to allow forming of said blend and firing thereof between 1600° C. and 2400° C., said process being characterized in that the difference between the percentile d | 07-14-2011 |
20110217224 | SILICON CARBIDE CRYSTAL, METHOD OF MANUFACTURING THE SAME, APPARATUS FOR MANUFACTURING THE SAME, AND CRUCIBLE - A method of manufacturing SiC crystal includes the following steps. A manufacturing apparatus including a crucible having a main body portion and a heat insulating material covering the main body portion is prepared. In the main body portion, seed crystal is arranged opposed to a source material. The source material is heated to sublime and a source gas is precipitated on the seed crystal, to thereby grow SiC crystal. The step of preparing the manufacturing apparatus includes the step of arranging a heat radiation portion higher in thermal conductivity than the heat insulating material on a side of an outer surface of the main body portion on a side of seed crystal and covering the entire outer surface of the main body portion on the side of the seed crystal with the heat radiation portion or with the heat radiation portion and the heat insulating material. | 09-08-2011 |
20110243826 | Method and System for Manufacturing Silicon and Silicon Carbide - The present invention provides a method of manufacturing silicon and a manufacturing system for manufacturing and extracting silicon by grinding silicon carbide and silica, mixing each at predetermined ratio after cleaning them, housing them in a crucible, heating this by a heating unit to make them react, oxidizing the silicon carbide with the silica and further, reducing the silica with the silicon carbide. The present invention further provides a method of simultaneously manufacturing silicon and silicon carbide and a manufacturing system for producing silicon carbide by forming a silicon carbide film by vapor phase epitaxy using active gas generated in heating for reaction for material and recovering the silicon carbide film. | 10-06-2011 |
20110250117 | METHOD FOR FABRICATING SILICON CARBIDE MATERIAL - Methods for fabricating silicon carbide material are disclosed. One method includes: recycling carbon dioxide (CO | 10-13-2011 |
20110262336 | PRODUCTION OF SOLAR-GRADE SILICON FROM SILICON DIOXIDE - The invention relates to a complete method for producing pure silicon that is suitable for use as solar-grade silicon, comprising the reduction of a silicon oxide, purified by acidic precipitation from an aqueous solution of a silicon oxide dissolved in an aqueous phase, using one or more pure carbon sources, the purified silicon oxide being obtained, in particular, by the precipitation of a silicon oxide dissolved in an aqueous phase in an acidifier. The invention also relates to a formulation containing an activator and to a device for producing silicon, a reactor and electrodes. | 10-27-2011 |
20110300048 | METHOD FOR RECYCLING SILICON CARBIDE - A method for recycling silicon carbide, comprises a filtrating step, providing a siliceous mortar with silicon carbide, silicon and a buffer, and further filtering out the buffer form the siliceous mortar to obtain a siliceous slurry; a first removing step, heating the siliceous slurry to evaporate the buffer and obtain a mixture of silicon and silicon carbide; a dissolving step, placing the mixture of silicon and silicon carbide in an alkaline solution to dissolve the silicon from the mixture of silicon and silicon carbide into the alkaline solution; and a second removing step, completely removing the alkaline solution containing dissolved silicon, in order to obtain purified silicon carbide. | 12-08-2011 |
20120020863 | METHOD FOR PROCESSING CERAMIC FIBERS - A method of treating ceramic fibers based on metal carbide, the method including a first reagent gas heat treatment performed with at least one first reagent gas of the halogen type that chemically transforms the surface of the fiber to obtain a surface layer constituted mainly of carbon, and a second reagent gas heat treatment performed with at least one second reagent gas that eliminates the surface layer formed during the chemical transformation. | 01-26-2012 |
20120107218 | PRODUCTION METHOD OF SILICON CARBIDE CRYSTAL, SILICON CARBIDE CRYSTAL, AND PRODUCTION DEVICE OF SILICON CARBIDE CRYSTAL - A production method of a SiC crystal includes the following steps. That is, there is prepared a production device including a crucible and a heat insulator covering an outer circumference of the crucible. A source material is placed in the crucible. A seed crystal is placed opposite to the source material in the crucible. The silicon carbide crystal is grown by heating the source material in the crucible for sublimation thereof and depositing resultant source material gas on the seed crystal. The step of preparing the production device includes the step of providing a heat dissipation portion, which is constituted by a space, between the heat insulator and an outer surface of the crucible at a side of the seed crystal. | 05-03-2012 |
20120114545 | Method to Manufacture Large Uniform Ingots of Silicon Carbide by Sublimation/Condensation Processes - This invention relates to a method for the manufacture of monolithic ingot of silicon carbide comprising: i) introducing a mixture comprising polysilicon metal chips and carbon powder into a cylindrical reaction cell having a lid; ii) sealing the cylindrical reaction cell of i); iii) introducing the cylindrical reaction cell of ii) into a vacuum furnace; iv) evacuating the furnace of iii); v) filling the furnace of iv) with a gas mixture which is substantially inert gas to near atmospheric pressure; vi) heating the cylindrical reaction cell in the furnace of v) to a temperature of from 1600 to 2500° C.; vii) reducing the pressure in the cylindrical reaction cell of vi) to less than 50 torr but not less than 0.05 torr; and viii) allowing for substantial sublimation and condensation of the vapors on the inside of the lid of the cylindrical reaction cell of vii). | 05-10-2012 |
20120156122 | METHOD OF PRODUCING SILICON CARBIDE CRYSTAL, AND SILICON CARBIDE CRYSTAL - In a method of producing a SiC crystal by sublimation, the atmosphere gas for growing a SiC crystal contains He. The atmosphere gas may further contain N. The atmosphere gas may further contain at least one type of gas selected from the group consisting of Ne, Ar, Kr, Xe, and Rn. In the atmosphere gas, the partial pressure of He is preferably greater than or equal to 40%. | 06-21-2012 |
20120171101 | Recycling and Treatment Method of Waste Liquid in Cutting Mono Silicon - A recycling and treatment method of mono silicon's cutting waste liquid, which includes the following steps: 1. treat the waste liquid with diluted hydrochloric acid, then stir into an easy-to-flow mixture; 2. heat up the mixture for solid-liquid separation, such that water and polyethylene glycol are evaporated, condensed and dehydrated to recover the polyethylene glycol, and obtain coarse solid mixture of silicon carbide and silicon; 3. obtain the secondary solid mixture of silicon carbide and silicon by secondary cleaning of the coarse solid mixture with water; 4. recycle silicon and silicon carbide by treatment with the mixed acid solution of HN0 | 07-05-2012 |
20120183466 | SILICON CARBIDE CRYSTAL AND METHOD OF MANUFACTURING SILICON CARBIDE CRYSTAL - An SiC crystal has Fe concentration not higher than 0.1 ppm and Al concentration not higher than 100 ppm. A method of manufacturing an SiC crystal includes the following steps. SiC powders for polishing are prepared as a first source material. A first SiC crystal is grown by sublimating the first source material through heating and precipitating an SiC crystal. A second source material is formed by crushing the first SiC crystal. A second SiC crystal is grown by sublimating the second source material through heating and precipitating an SiC crystal. Thus, an SiC crystal and a method of manufacturing an SiC crystal capable of achieving suppressed lowering in quality can be obtained. | 07-19-2012 |
20120201735 | SYSTEM AND METHOD FOR MANUFACTURING SILICON CARBIDE PULVERULENT BODY - Disclosed herein is a high-purity carbon silicon pulverulent body manufacturing method and system. That is, a high-purity carbon silicon pulverulent body manufacturing method of the present invention includes the step of producing a mixture consisting of silicon sources and carbon sources in a mixer; and the step of synthesizing silicon carbide (SiC) pulverulent body by heating the mixture at a vacuum degree of larger than 0.03 torr and equal to and less than 0.5 torr and at a temperature of equal to or larger than 1300° C. and equal to and less than 1900° C. | 08-09-2012 |
20120201736 | METHOD OF PRODUCING A SILICON CARBIDE MOLDED ITEM - A method of producing a silicon carbide molded item is provided. The method includes molding a curable silicone composition comprising a silicon carbide powder or a combination of a silicon carbide powder and a carbon powder into a desired shape, curing the molded curable silicone composition to yield a cured silicone molded item, and then thermally decomposing the cured silicone molded item under a non-oxidizing atmosphere. The method is capable of simply producing a high-purity silicon carbide molded item having a desired shape and dimensions. | 08-09-2012 |
20120225004 | Halosilane Assisted PVT Growth of SiC - In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system. | 09-06-2012 |
20120237428 | SIC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF - A method is disclosed with provides stable growth of SiC single crystals, particularly 4H—SiC single crystals, with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000° C. or lower. A raw material containing Si, Ti and Ni is charged into a crucible made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible into the solvent to obtain a melt. A SiC seed crystal substrate is then brought into contact with the melt such that SiC is supersaturated in the melt in the vicinity of the surface of the SiC seed crystal substrate, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate. | 09-20-2012 |
20120275984 | METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL, AND SILICON CARBIDE SUBSTRATE - Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces. | 11-01-2012 |
20120294790 | SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT - A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base substrate made of single crystal silicon carbide and having an off angle of 0.1° or more and 10° or less in an off angle direction which is either a <11-20> direction or a <1-100> direction relative to a (0001) plane, and a film formation step of growing a silicon carbide layer on a surface of the base substrate. In the film formation step, a region having a (0001) facet | 11-22-2012 |
20130039832 | METHOD OF PRODUCING SILICON CARBIDE - A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions. | 02-14-2013 |
20130129598 | SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME - Provided is a method for manufacturing silicon carbide. The method includes mixing a dry silicon source, a solid carbon source, and a binder with each other and heating the mixed source to form silicon carbide. | 05-23-2013 |
20130129599 | SILICON CARBIDE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a silicon carbide and a method for manufacturing the same. The method for manufacturing silicon carbide includes mixing a silicon source with a carbon source, and heating a mixture of the silicon and carbon sources to form the silicon carbide. At least one of the silicon source and the carbon source has an average grain size of about 10 nm to about 100 nm. | 05-23-2013 |
20130230445 | Method Of Processing Wafer Waste - Provided is a method of processing wafer waste. First, the wafer waste is separated into liquid mixture and solid mixture by solid-liquid separation. Next, a recovered cutting fluid is isolated from the liquid mixture by evaporation. The solid mixture is mixed with a first aqueous solvent to obtain a mixing slurry. Then, the mixing slurry is separated into a silicon-containing mixture and a silicon carbide-containing mixture. After suitable washing process, a recovered silicon and a recovered silicon carbide are finally obtained. Thus, the method recovers the cutting fluid, silicon and silicon carbide in the same process, which can reduce the environmental contaminations caused by wafer waste and reduce the manufacture cost of wafer production by recovering the wafer waste. | 09-05-2013 |
20130272947 | Silicon Carbide Synthesis from Agricultural Waste - This disclosure concerns a method of making silicon carbide involving adding one from the group of rice husk material, sorghum, peanuts, maple leaves, and/or corn husk material to a container, creating a vacuum or an inert atmosphere inside the container, applying conventional heating or microwave heating, heating rapidly, and reacting the material and forming silicon carbide (SiC). | 10-17-2013 |
20130323152 | READILY SINTERABLE SILICON CARBIDE POWDER AND SILICON CARBIDE CERAMIC SINTERED BODY - Provided are: a readily sinterable silicon carbide powder substantially having a stoichiometric composition and from which a dense sintered body can be obtained; a silicon carbide ceramic sintered body having a low specific resistance; and a production method thereof. This readily sinterable silicon carbide powder has a carbon/silicon elemental ratio of 0.96 to 1.04, an average particle diameter of 1.0 to 100 μm, and a ratio of 20% or less of an integrated value of an absorption intensity in a chemical shift range of 0 to 30 ppm to an integrated value of an absorption intensity in a chemical shift range of 0 to 170 ppm, in a | 12-05-2013 |
20140065051 | METHOD FOR MANUFACTURING SILICON CARBIDE POWDER - A method for revitalizing worn and fatigued silicon carbide powder thermally reacted it continuously with a mixture of silicon oxide powder and/or carbon powder and a boron and carbon-containing additive in a non-oxidizing atmosphere at a temperature higher than 1850 degrees C. but lower than 2400 degrees C. | 03-06-2014 |
20140127115 | METHOD OF FABRICATING SILICON CARBIDE POWDER - A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas. | 05-08-2014 |
20140140915 | PROCESS FOR MANUFACTURING SILICON CARBIDE - A process for manufacturing SiC wherein the emissions of polluting gases are minimized, by reduction of silicon oxide by an excess of carbon, the process including electrically heating a resistor at the heart of a mixture of raw materials consisting of a carbon-based source chosen from petroleum cokes and a source of silicon, especially a silica having a purity of greater than 95% of SiO | 05-22-2014 |
20140178285 | METHOD OF FABRICATING SILICON CARBIDE - A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps. | 06-26-2014 |
20140219904 | GEOTHERMAL ENERGIZATION OF A NON-COMBUSTION CHEMICAL REACTOR AND ASSOCIATED SYSTEMS AND METHODS - Systems and methods for heating a non-combustion chemical reactor with thermal energy from a geothermal heat source are described. A working fluid is directed from the geothermal heat source to the chemical reactor to transfer heat. The working fluid can be circulated in a closed system so that it does not contact material at the geothermal heat source, or in an open system that allows the working fluid to intermix with material at the geothermal heat source. When intermixing with material at the geothermal heat source, the working fluid can transport donor substances at the geothermal heat source to the chemical reactor. | 08-07-2014 |
20140322122 | POROUS NANOSTRUCTURED POLYIMIDE NETWORKS AND METHODS OF MANUFACTURE - Porous three-dimensional networks of polyimide and porous three-dimensional networks of carbon and methods of their manufacture are described. For example, polyimide aerogels are prepared by mixing a dianhydride and a diisocyanate in a solvent comprising a pyrrolidone and acetonitrile at room temperature to form a sol-gel material and supercritically drying the sol-gel material to form the polyimide aerogel. Porous three-dimensional polyimide networks, such as polyimide aerogels, may also exhibit a fibrous morphology. Having a porous three-dimensional polyimide network undergo an additional step of pyrolysis may result in the three dimensional network being converted to a purely carbon skeleton, yielding a porous three-dimensional carbon network. The carbon network, having been derived from a fibrous polyimide network, may also exhibit a fibrous morphology. | 10-30-2014 |
20140356274 | SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND SILICON CARBIDE SINTERED BODY, METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture. | 12-04-2014 |
20150308014 | SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE - A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate. | 10-29-2015 |
20150344313 | METHOD FOR CONTROLLING THE PRODUCTION OF NANOPOWDER OF A GIVEN DIAMETER FROM AT LEAST ACETYLENE CONTAINED IN A PRESSURISED CYLINDER - The invention concerns a method for controlling the production of nanopowder of a given diameter from at least acetylene contained in a pressurised cylinder, comprising defining the colour of the nanopowder and adjusting the rate of discharge from the pressurised cylinder of acetylene on the basis of the colour of the nanopowder. It also concerns a method for producing nanopowder of a given diameter and a given colour from at least acetylene contained in a pressurised cylinder; production being controlled using the abovementioned method. | 12-03-2015 |
20150360958 | CERAMIC STRUCTURE - There is provided a ceramic structure including silicon carbide (SiC). The silicon carbide includes carbon, and silicon which has | 12-17-2015 |
20150360959 | METHOD OF PRODUCING SILICON CARBIDE AND SILICON CARBIDE - The present invention provides a method of producing silicon carbide, comprising: providing a silicon-crystal producing apparatus with a carbon heater; forming a silicon carbide by-product on a surface of the carbon heater when a silicon crystal is produced from a silicon melt contained in a container heated by the carbon heater under a non-oxidizing atmosphere; and collecting the silicon carbide by-product to produce the silicon carbide. A method that can produce silicon carbide with low energy at low cost is thereby provided. | 12-17-2015 |
20150361586 | SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A silicon carbide single crystal includes a spiral dislocation. The spiral dislocation includes a L dislocation having a burgers vector defined as b, which satisfies an equation of b><0001>+1/3<11-20>. The L dislocation has a density equal to or lower than 300 dislocations/cm | 12-17-2015 |
20160016807 | Reaction Bonded Silicon Carbide Bodies Made From High Purity Carbonaceous Preforms - A process for producing reaction bonded silicon carbide (RBSC) from high purity, porous, essentially all-carbon preforms through contacting said preforms with silicon metal at room temperature, and subsequently heating to melt silicon metal and cause infiltration into said preform causing reaction to silicon carbide and leaving residual silicon, to result in a dense silicon carbide-silicon composite. The process offers the ability to produce RBSC with higher purity, higher strength, and lower cost as long as the carbonaceous preforms are of sufficient purity and pore size distribution to allow for uniform, crack-free bulk bodies to be fabricated. | 01-21-2016 |
20160137512 | SILICON CARBIDE POWDER - The present invention is a silicon carbide powder with which it is possible to obtain favorable results in terms of the reaction performance of carbon and silicon, the amount of free carbon (FC), and the yield of the silicon carbide powder. In a mixture containing a silicon source, a carbon source, and a catalyst, the silicon source is methyl silicate; and when the mixture is 100 weight %, the weight % of the carbon source is 33 weight % or more and 39 weight % or less, the weight % of silicon source is 55 weight % or more and 62 weight % or less, and the weight % of the catalyst is 3 weight % or more and 10 weight % or less. | 05-19-2016 |
423346000 | By reacting vapor phase silicon compound with carbon or carbon containing compound | 6 |
20090053125 | Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals - A SiC single crystal is grown by physical vapor transport (PVT) in a graphite growth chamber, the interior of which is charged with a SiC source material and a SiC single crystal seed in spaced relation. During PVT growth of the SiC single crystal, the growth chamber further includes Ce. The SiC single crystal grows on the SiC single crystal seed in response to heating the interior of the growth chamber to a growth temperature and in the presence of a temperature gradient in the growth chamber whereupon the temperature of the SiC single crystal seed is lower than the temperature of the SiC source material. The Ce can include either Ce silicide or Ce carbide. | 02-26-2009 |
20090169459 | Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth - In method of crystal growth, an interior of a crystal growth chamber ( | 07-02-2009 |
20100202953 | SAND, SHALE AND OTHER SILICON DIOXIDE SOLID COMPOUNDS AS STARTING SUBSTANCES FOR PROVIDING SILICON SOLID COMPOUNDS, AND CORRESPONDING PROCESSES FOR OPERATING POWER STATIONS - A process for providing silicon compounds from a silicon dioxide compound, preferably sand, with the following steps:
| 08-12-2010 |
20130243682 | METHOD FOR MANUFACTURING SiC POWDERS WITH HIGH PURITY - Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment. | 09-19-2013 |
20140301933 | SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SAME - A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO | 10-09-2014 |
20160023911 | METHODS FOR PRODUCING SILICON CARBIDE FIBERS - Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500° C. to approximately 2000° C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01×10 | 01-28-2016 |