Class / Patent application number | Description | Number of patent applications / Date published |
374176000 | Including sensor having hysteresis or cryogenic property (e.g., ferromagnetism, superconductivity) | 10 |
20080212646 | Remote temperature sensing device and related remote temperature sensing method - A device and method of remote temperature sensing, the device having a temperature sensor placeable on a rotating item utilizing the temperature sensor being a plurality of rectangular shaped amorphous magnetic alloy strips connected magnetically, wherein at least one of the strips has a predetermined ferromagnetic Curie temperature and another strip has a magnetic permeability exceeding 2,000. | 09-04-2008 |
20090196326 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device which can maintain a high tuning accuracy while suppressing a cost increase and suppress an increase in the time required for tuning. There are included, in addition to variable resistors configuring a level shift circuit, an additional resistor coupled between the output node of a VBGR voltage of a BGR circuit and one of the variable resistors and an additional resistor coupled between the other of the variable resistors and a reference voltage. N-channel MOS transistors are coupled in parallel with the additional resistors, respectively. | 08-06-2009 |
20090252197 | CULINARY ARTICLE THAT ALLOWS THE DETECTION OF ITS TEMPERATURE VIA A COOKING PLATE - The invention relates to a culinary article ( | 10-08-2009 |
20100080263 | Sensor Arrangement And Method For Using Same - A sensor arrangement includes, in some embodiments, a magnetostrictive element configured to output magnetic signals in response to a magnetic field. A sensor is configured to sense a value of a property of a selected object, and to provide an electrical resistance that varies in response to variations in the sensed value. The sensor cooperates with the magnetostrictive element to vary the frequency of the signals output by the magnetostrictive element based on variations of the electrical resistance provided by the sensor. A transmitter provides an alternating magnetic field to the magnetostrictive element, and a receiver picks up the magnetic signals generated by the magnetostrictive element. The frequency of the signals received is correlated with the sensor resistance, and the resistance is correlated to a value of the property sensed. | 04-01-2010 |
20100118915 | ELECTRONIC DEVICE HAVING THERMALLY MANAGED ELECTRON PATH AND METHOD OF THERMAL MANAGEMENT OF VERY COLD ELECTRONS - A device and a method of thermal management. In one embodiment, the device includes an integrated circuit, including: (1) a conductive region configured to be connected to a voltage source, (2) a transistor having a semiconductor channel with a controllable conductivity and (3) first and second conducting leads connecting to respective first and second ends of said channel, wherein a charge in the conductive region is configured to substantially raise an electrical potential energy of conduction charge carriers in the semiconductor channel and portions of said leads are located where an electric field produced by said charge is substantially weaker than near the semiconductor channel. | 05-13-2010 |
20100322283 | MAGNETIC ELEMENT TEMPERATURE SENSORS - The temperature sensors ( | 12-23-2010 |
20110044372 | Semiconductor Device having variable parameter selection based on temperature and test method - A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined. | 02-24-2011 |
20120243574 | SEMICONDUCTOR DEVICE HAVING VARIABLE PARAMETER SELECTION BASED ON TEMPERATURE AND TEST METHOD - A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined. | 09-27-2012 |
374177000 | Ferroelectric | 2 |
20080304545 | SYSTEMS AND METHODS FOR DETERMINING A TEMPERATURE OF A FERROELECTRIC SENSOR - Systems and methods for determining a temperature of a ferroelectric sensor are provided. The ferroelectric sensor has operational characteristics defined by a polarization versus voltage hysteresis loop. In one exemplary embodiment, the method includes applying a symmetrical periodic voltage waveform to the ferroelectric sensor so as to induce the ferroelectric sensor to traverse the polarization versus voltage hysteresis loop. The method further includes monitoring voltages across the ferroelectric sensor and polarization states of the ferroelectric sensor over a first time interval to determine a first zero field polarization state and a first coercive field voltage. The method further includes determining a first temperature value indicative of the temperature of the ferroelectric sensor based on the first coercive field voltage. | 12-11-2008 |
20110299566 | PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR - A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode. | 12-08-2011 |