Class / Patent application number | Description | Number of patent applications / Date published |
372500210 | Having photodetection means | 19 |
20080205469 | OPTICAL ELEMENT - An optical element includes: a surface emitting semiconductor laser portion; a separator formed superjacent to the surface emitting semiconductor laser portion; and a light detector formed superjacent to the separator. The separator electrically separates the surface emitting semiconductor laser portion and the light detector and has a first separation layer made of a first conductive type semiconductor and a second separation layer that is formed one of superjacent to and lower the first separation layer and is made of a second conductive type semiconductor having a refractive index different from a refractive index of the first separation layer. The separator functions as a mirror that reflects at least a part of light having an oscillation wavelength generated from the surface emitting semiconductor laser portion at an interface between the first separation layer and the second separation layer. | 08-28-2008 |
20080219316 | Laser and Monitoring Photodetector with Polymer Light Guide - A surface emitting laser ( | 09-11-2008 |
20090016399 | HYBRID SILICON EVANESCENT PHOTODETECTORS - Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected. | 01-15-2009 |
20090059989 | OPTOELECTRONIC CIRCUIT WITH A PHOTORECEPTOR AND A LASER DIODE, AND MODULE COMPRISING THE SAME - The optoelectronic circuit includes a photoreceptor ( | 03-05-2009 |
20090147817 | OPTICAL MODULE, METHOD OF MANUFACTURING THE OPTICAL MODULE, AND DATA COMMUNICATION SYSTEM INCLUDING THE OPTICAL MODULE - An optical module includes a fiber array, a laser diode array and a photodiode array. The fiber array has optical fibers which are divided to a transmitter group and a receiver group. The laser diode array has laser diodes which are grouped in a transmitter group. The photodiode array has photodiodes which are divided to a monitor group and a receiver group. The laser diode array is provided between the fiber array and the photodiode array. Each optical fiber of the transmitter group, each laser diode of the transmitter group and each photodiode of the monitor group are optically aligned, respectively. Each optical fiber of the receiver group is optically aligned with each photodiode of the receiver group, respectively. | 06-11-2009 |
20090175307 | Optical connection device and method of fabricating the same - Provided is an optical connection device and a method of fabricating the same. The optical connection device includes a laser diode formed on a substrate, a photodiode that is formed on the laser diode and has an aperture which is an exit of light emitted from the laser diode, and a plurality of electrode pads connected to electrodes for the laser diode and the photodiode on the substrate. A direction in which the light of the laser diode is emitted is opposite to a bonding direction between the laser diode and the substrate with respect to the laser diode. | 07-09-2009 |
20090238231 | LD MODULE - The present invention is to provide an LD module that can detect a wavelength fluctuation with a simple configuration and can reduce its size and prices. The LD module includes a double-sided light-emitting LD element for emitting an output light and a backward light in both forward and backward directions, a reference LD element whose temperature dependence of an oscillation wavelength is different from that of the double-sided light-emitting LD element, and a PD for receiving a multiplexed wave of the backward light of the double-sided light-emitting LD element and an output light of the reference LD element and detecting a beat component generated by the multiplexing. | 09-24-2009 |
20090238232 | Method of Protecting Semiconductor Chips from Mechanical and ESD Damage During Handling - A method and apparatus are provided for protecting a semiconductor device from damage. The method may include the steps of providing an active semiconductor device on a surface of a semiconductor substrate where the active device is surrounded by an inactive semiconductor area, and providing a soft metallic guard element in the inactive semiconductor area around at least a portion of the periphery of the active device wherein the metallic guard element is connected to ground potential and not to the active device. | 09-24-2009 |
20090316745 | OPTICAL MODULE - A laser diode has a horizontal cavity and a mirror attached to the horizontal cavity at an angle of substantially 45° or substantially 135°. The laser diode is mounted on a stem substantially horizontally with taking light vertically emitted to the horizontal cavity as an optical signal, and light horizontally emitted as an optical signal for monitoring, respectively. A photodetector is mounted on the stem substantially orthogonally and so as to let in the optical signal for monitoring. | 12-24-2009 |
20100254423 | SEMICONDUCTOR LASER WITH INTEGRATED PHOTOTRANSISTOR - The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region ( | 10-07-2010 |
20100303118 | Semiconductor laser device - A semiconductor laser device has structure including: a semiconductor laser chip having an emission surface and a reflection surface which are opposing end surfaces of a resonator; and a photodiode for detecting light that exits from the reflection surface side, the photodiode being used in a wavelength band where a sensitivity of the photodiode rises as a wavelength lengthens, in which the emission surface has a first dielectric multilayer film formed thereon and the reflection surface has a second dielectric multilayer film formed thereon, and in which, when a wavelength at which a reflectance of the first dielectric multilayer film peaks is given as λ | 12-02-2010 |
20110044367 | 3D OPTOELECTRONIC PACKAGING - An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board. | 02-24-2011 |
20110044368 | OPTICAL DEVICE - An optical device is disclosed. The optical device includes a first packaging unit and a second packaging unit. The first packaging unit includes a first lead frame and a sensor electrically coupled to the first lead frame. The second packaging unit includes an emitting die and a second lead frame. The emitting die has an optical axis and is operable to emit a light. The second lead frame has a first portion disposed within the second packaging unit and a second portion extending into the first packaging unit so that an angle of about 5-85 degrees is formed between the optical axis of the emitting die and the sensing plane of the sensor. | 02-24-2011 |
20110064110 | VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH MONOLITHICALLY INTEGRATED PHOTODIODE - The present invention relates to a vertical cavity surface emitting laser device comprising a VCSEL with a monolithically integrated photodiode. The photodiode ( | 03-17-2011 |
20110096806 | Semiconductor light emitting device - The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified. | 04-28-2011 |
20110200066 | CHIP MODULE PACKAGE STRUCTURE - A chip module package structure applied to an optical input device includes a cover body, a first chip module, and a second chip module. The first chip module and the second chip module are respectively combined with the cover body, the first chip module has an optical source, and the second chip module has an optical sensor. Further, the optical source and the optical sensor form a preset relative spatial position relation, such that a part of light emitted by the optical source is received by the optical sensor after at least one reflection. | 08-18-2011 |
20120120978 | 3D OPTOELECTRONIC PACKAGING - An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board. | 05-17-2012 |
20130094531 | VISUAL INDICATOR FOR SEMICONDUCTOR CHIPS FOR INDICATING MECHANICAL OR ESD DAMAGE - A semiconductor device including a semiconductor substrate having a surface including an active semiconductor device including one of a laser and a photodiode; and a visual indicator disposed on the semiconductor body and at least adjacent to a portion of said active semiconductor device, the indicator having a state that shows if damage to the active semiconductor device may have occurred. | 04-18-2013 |
20140269804 | Package Structure and Methods of Forming Same - A semiconductor device, a package structure, and methods of forming the same are disclosed. An embodiment is a semiconductor device comprising a first optical device over a first substrate, a vertical waveguide on a top surface of the first optical device, and a second substrate over the vertical waveguide. The semiconductor device further comprises a lens capping layer on a top surface of the second substrate, wherein the lens capping layer is aligned with the vertical waveguide, and a second optical device over the lens capping layer. | 09-18-2014 |