Class / Patent application number | Description | Number of patent applications / Date published |
372490010 | Particular coating on facet | 49 |
20080198889 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film on the front surface electrode or the rear surface electrode and made of a material that does not react with Au, and a coating film that covers an end face on a light emitting side and an end face opposite the light emitting side. The anti-adhesive films may be located at least at the four corners of the front or rear surface electrode. | 08-21-2008 |
20080205468 | SEMICONDUCTOR LASER DEVICE HAVING A LOW REFLECTION FILM OF STABLE REFLECTANCE - A semiconductor laser device comprises a GaN substrate having a refractive index of 3.5 or below, a semiconductor layer laminated on the substrate, and a pair of facets forming a resonator and in face-to-face-relation to each other in a direction perpendicular to the direction of the laminated layer. One of the facets of the resonator includes a low reflection film, of a first dielectric film, a second dielectric film, a third dielectric film, and a fourth dielectric film. When the refractive indexes of these films are taken as n | 08-28-2008 |
20080219313 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. Further, an adhesive layer and a coating film are on the front facet, and an adhesive layer and a coating film are on the rear facet. The adhesive layers preferably have a thickness of 10 nm or less and preferably include an anodic oxide film of one of Al, Ti, Nb, Zr, Ta, Si, and Hf. | 09-11-2008 |
20080219314 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device includes a cavity extending in a propagation direction of a laser beam (X-direction). A front facet is on one end of the cavity through which the laser beam is emitted. A rear facet is on the other end of the cavity. An anodic oxide film is provided on at least one of the front facet and the rear facet, and the anodic oxide film preferably has a thickness of λ/4n or an odd integer multiple thereof, where λ is the wavelength of the laser beam and n is the refractive index of the anodic oxide film. | 09-11-2008 |
20080240193 | Two-dimensional photonic crystal surface-emitting laser - The two-dimensional photonic crystal surface emitting laser according to the present invention includes a semiconductor substrate, a main laser section and a reflection film. The main laser section includes a lower cladding layer, an active layer, a two-dimensional photonic crystal layer, an upper cladding layer and a contact layer, which are all deposited on the semiconductor substrate. The reflection film, which surrounds the entire side surfaces of the main laser section, is made of a thin titanium-gold film deposited by sputtering. | 10-02-2008 |
20080291961 | Nitride semiconductor light emitting device and method of fabricating nitride semiconductor laser device - There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride. | 11-27-2008 |
20080304530 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers. | 12-11-2008 |
20090010294 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element, comprises; nitride semiconductor layers in which a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order; a cavity end face formed by the nitride semiconductor layers; and a protective film formed on the cavity end face, the protective film has a region in which an axial orientation of crystals is different in the direction of lamination of the nitride semiconductor layers. | 01-08-2009 |
20090022198 | PACKAGE STRUCTURE OF COMPOUND SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A package structure of a compound semiconductor device comprises a thin conductive film with a pattern, a die, at least one metal wire or metal bump and a transparent encapsulation material. The die is mounted on the first surface of the thin conductive film, and is electrically connected to the thin conductive film through the metal wire or the metal bump. The transparent encapsulation material is overlaid on the first surface of the conductive film and the die. A second surface of the conductive film is not covered by the transparent encapsulation material, and is opposite the first surface. | 01-22-2009 |
20090034573 | SEMICONDUCTOR LASER DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion extending between the front end face from which laser light is extracted and the rear end face opposite to the front end face. The stripe portion has a first region located closer to the front end face, a second region located closer to the rear end face and a change region whose width changes located between the first and second regions. The effective refractive index difference between the inside and outside of the stripe portion in the change region is greater than that in the first region. | 02-05-2009 |
20090052489 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride-based semiconductor laser device includes a front facet located on a forward end of an optical waveguide and formed by a substantially (000-1) plane of a nitride-based semiconductor layer and a rear facet located on a rear end of the optical waveguide and formed by a substantially (0001) plane of the nitride-based semiconductor layer, wherein an intensity of a laser beam emitted from the front facet is rendered larger than an intensity of a laser beam emitted from the rear facet. | 02-26-2009 |
20090086782 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME - On a first region that is a part of one main face of a semiconductor substrate | 04-02-2009 |
20090086783 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 | 04-02-2009 |
20090185595 | SEMICONDUCTOR LASER - A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition. | 07-23-2009 |
20090213891 | SEMICONDUCTOR LASER - A GaN semiconductor laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The sum of the optical film thicknesses of the first insulating film and the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than that of the second insulating film to GaN. The refractive index of the first insulating film is 1.9 or less and the refractive index of the second insulating film is 2 to 2.3. | 08-27-2009 |
20090262774 | Sliced Fiber Bragg grating used as external cavity for semiconductor laser and solid state laser - A Fiber Bragg grating is sliced into small segments (such as 1 mm in length), the sliced fiber Bragg grating segments are used as external cavities for lasers to stabilize their center wavelength. In one embodiment, a semiconductor laser has an anti-reflection coating on the front facet and a high reflectivity coating on the back facet, a sliced fiber Bragg grating is used as a partial reflection mirror to form a lasing cavity. Since the sliced fiber Bragg grating has a very small wavelength drift with temperature change, the semiconductor laser has a stable center wavelength output. In the other embodiment, a solid state laser has an anti-reflection coating on the front facet and a high reflectivity coating on the back facet, a sliced fiber Bragg grating is used as a partial reflection mirror to form a lasing cavity. The solid state laser has a stable center wavelength output. | 10-22-2009 |
20090274187 | Semiconductor Laser, Module and Optical Transmitter - A semiconductor optical waveguide-A having an optical amplification function and a semiconductor optical waveguide-B having a light control function are integrated together on the same substrate. A facet of the semiconductor optical waveguide-A facing an isolation trench and a facet of the semiconductor optical waveguide-B facing the isolation trench are configured as a composite optical reflector/optical connector using an optical interference. The facet of the semiconductor optical waveguide-A achieves an optical reflectivity not higher than the reflectivity corresponding to a cleaved facet and not smaller than several percent, and an optical coupling coefficient of not lower than 50% between the semiconductor optical waveguide-A and the semiconductor optical waveguide-B. | 11-05-2009 |
20100014550 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film. | 01-21-2010 |
20100034231 | SEMICONDUCTOR LASER - A semiconductor laser, which emits a laser beam from an edge surface of an active layer ( | 02-11-2010 |
20100046568 | QUANTUM CASCADE LASER AMPLIFIER WITH AN ANTI-REFLECTION COATING INCLUDING A LAYER OF YTTRIUM FLUORIDE - A quantic cascade laser amplifier ( | 02-25-2010 |
20100054292 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A first semiconductor laser element is formed on a surface of a substrate and has a first cavity facet. The first semiconductor laser element has a first recess in the first cavity facet except for at least a region where a first optical waveguide is formed. The first recess extends in a first direction in which the first cavity facet extends. A second semiconductor laser element is bonded to a first surface of the first semiconductor laser element. The first surface is arranged opposite side of the first laser element to the substrate, and has a second cavity facet formed in substantially the same plane as the first cavity facet. The second semiconductor laser element has a second recess in the second cavity facet except for a region where a second optical waveguide is formed, the second recess extending in a second direction in which the second cavity facet extends. | 03-04-2010 |
20100111130 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 05-06-2010 |
20100118908 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device ( | 05-13-2010 |
20100158066 | NITRIDE SEMICONDUCTOR LASER ELEMENT - A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer. | 06-24-2010 |
20100172389 | TWO-DIMENSIONAL PHOTONIC CRYSTAL PLANE EMISSION LASER - A two-dimensional photonic crystal plane emission laser of the invention includes a two-dimensional photonic crystal which has a two-dimensional photonic crystal area and a light reflecting area, and which selects a wavelength of light to be generated in an active layer. The light reflecting area is formed in such a manner that when light leaking from the two-dimensional photonic crystal area and reflected on a reflecting surface of the light reflecting area is returned to the two-dimensional photonic crystal area, the reflection light is combined with a standing wave residing in a propagating direction of the reflection light without disturbing its resonant state. | 07-08-2010 |
20100265981 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER - A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode ( | 10-21-2010 |
20100303116 | SEMICONDUCTOR LASER DEVICE AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film. | 12-02-2010 |
20100316082 | NITRIDE SEMICONDUCTOR LASER CHIP - A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region. | 12-16-2010 |
20110007770 | Nitride semiconductor light-emitting device and method for fabrication thereof - An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained. | 01-13-2011 |
20110122909 | ADHESIVE PROTECTIVE COATING WITH SUPRESSED REFLECTIVITY - The disclosure is directed to a thin-film for use in below 300 nm laser systems that can be applied to a variety of substrate types. The thin film consists of a blocking layer of a selected material and a matching structure, the matching structure consisting of 1-7 layers of a selected material. The blocking layer serves to minimize or eliminate the transmission of below 300 nm laser light into an adhesive that is used to bond the substrate to a holder. The matching layer(s) minimize internal reflectance of below 300 nm laser light from the blocking layer back into the substrate. | 05-26-2011 |
20110134953 | WAVEGUIDE LASER - It is an object of the invention to provide a simple setup of a waveguide laser which allows to control the emission of specific laser wavelengths in a laser material having laser transitions of similar wavelengths. For this purpose a core ( | 06-09-2011 |
20110164643 | SEMICONDUCTOR LASER DEVICE - According to one embodiment, a semiconductor laser device includes stacked layers and a light output layer. The stacked layers include an active layer. The light output layer is provided in contact with a light output end face of an optical cavity made of the stacked layers. The light output layer includes a dielectric layer having a non-amorphous film, and a conductor portion provided at least one of on a surface of the dielectric layer and inside the dielectric layer. | 07-07-2011 |
20110188530 | Laser Light Source and Method for Producing a Laser Light Source - A laser light source comprises, in particular, a semiconductor layer sequence ( | 08-04-2011 |
20110200065 | NITRIDE BASED SEMICONDUCTOR LASER DEVICE - One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 | 08-18-2011 |
20110317734 | SPATIAL FILTERS - An etched-facet single lateral mode semiconductor photonic device is fabricated by depositing an anti reflective coating on the etched facet, and depositing a reflectivity modifying coating in a spatially controlled manner to modify the spatial performance of the emitted beam. | 12-29-2011 |
20120057612 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm | 03-08-2012 |
20120063482 | SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a first dielectric layer controlling a reflectance of the emitting side cavity facet and a second dielectric layer. A thickness of the second dielectric layer is set to a thickness defined by m×λ/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is λ. and a refractive index of the second dielectric layer is n, and is larger than a thickness of the first dielectric layer and at least 1 μm. | 03-15-2012 |
20120063483 | SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER DEVICE, AND OPTICAL APPARATUS EMPLOYING THE SAME - This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m×λ/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is λ and a refractive index of the dielectric layer is n, and at least 1 μm. | 03-15-2012 |
20120213241 | Broad Area Laser Having an Epitaxial Stack of Layers and Method for the Production Thereof - A broad stripe laser ( | 08-23-2012 |
20120224599 | MID-IR MICROCHIP LASER: ZNS:CR2+ LASER WITH SATURABLE ABSORBER MATERIAL - A method of fabrication of laser gain material and utilization of such media includes the steps of introducing a transitional metal, preferably Cr | 09-06-2012 |
20130070801 | SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlO | 03-21-2013 |
20130148683 | Laser Light Source and Method for Producing a Laser Light Source - A laser light source comprises, in particular, a semiconductor layer sequence ( | 06-13-2013 |
20130215923 | METHOD AND APPARATUS FOR COMBINING LASER ARRAY LIGHT SOURCES - An apparatus for providing a light beam has a solid-state laser to emit a polarized input laser light beam that has a first aspect ratio of etendue R | 08-22-2013 |
20140161147 | SEMICONDUCTOR LIGHT EMITTING DEVICES WITH DENSELY PACKED PHOSPHOR LAYER AT LIGHT EMITTING SURFACE - An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating. | 06-12-2014 |
20140286370 | HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES - Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device. | 09-25-2014 |
20150124847 | NITRIDE SEMICONDUCTOR LASER ELEMENT - Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light. | 05-07-2015 |
20150357789 | SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor laser device includes the steps of: preparing the semiconductor laser bar body including a top surface, an undersurface, two mutually opposing facets, and two mutually opposing side faces, performing a coating step to form a coating film on the facet, and performing a division step after the coating step. The division step performs scribing on and divides the semiconductor laser bar body. A groove is formed on the facet by denting the facet, or is formed in the coating film by exposing a part of the facet, and the groove extends from the top surface to the undersurface. A width of the groove is 20 μm. Scribing is performed on the top surface or the undersurface so that a scribed track or an extended line of the scribed track meets the groove. | 12-10-2015 |
20160036197 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm. | 02-04-2016 |
20160087153 | ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") INMOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBICCRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD) - A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blende-type BP layer formed on an Si substrate, an Al | 03-24-2016 |