Class / Patent application number | Description | Number of patent applications / Date published |
365221000 | Serial read/write | 7 |
20090161465 | Non-volatile Memory Device Having High Speed Serial Interface - A non-volatile memory device comprises an interface circuit for receiving a plurality of signals. The plurality of signals provides multiplexed address and data and command signals in a serial format. An input buffer stores a plurality of the plurality of signals received in serial format and reconstitutes the address, data and command signals, and has an output. A command circuit receives the output of the input buffer and stores the command signals therefrom. An address circuit receives the output of the input buffer and stores the address signals therefrom. A data buffer circuit receives the output of the input buffer and stores the data signals therefrom. An array of non-volatile memory cells stores data from and provides data to the data buffer in response to address signals from the address decoder. A state machine is connected to the command circuit and controls the array of non-volatile memory cells. An output buffer receives data from the data buffer circuit and provides data to the interface circuit. | 06-25-2009 |
20090285045 | Area Efficient First-In First-Out circuit - A FIFO memory having an available capacity of no more than N words deep by M bits wide. A write port receives data to store in the FIFO memory, and a read port provides the data stored in the FIFO memory. X memories store the data, where each of the X memories has a size of N/X by M. Control logic receives the data from the write port, writes the data into at least one of the X memories in a serial write manner, reads the data from at least one of the X memories in a serial read manner, and provides the data to the read port. The control logic also disables power to selected ones of the X memories when they are not being written to or read from. The FIFO memory is configured to both read and write the data at a given time to a given one of the X memories. | 11-19-2009 |
20110205825 | REDUCED SIGNAL INTERFACE MEMORY DEVICE, SYSTEM, AND METHOD - A memory has a serial interface. The serial interface is programmable to either use separate dedicated input and output pads, or to use one bidirectional pad. When one bidirectional pad is used, the interface signal count is reduced by one. | 08-25-2011 |
20120026819 | Fast Cyclic Decoder Circuit for FIFO/LIFO Data Buffer - Embodiments of systems and methods for improved first-in-first-out (FIFO), last-in-last out (LIFO) and full-cycle decoders are described herein. In the various embodiments of the system, a clock generator is operable to generate a clock signal having an active phase and an inactive phase. A set of monotonic flip-flops are operable to capture a set of incoming data addresses during the active cycle of the clock and to generate therefrom data corresponding to single bits in the addresses that have changed compared to the data addresses received by the set of monotonic flip-flops during an immediately preceding data capture cycle. A set of static flip-flops are operable to capture a set of incoming data addresses during the inactive phase of the clock cycle and to generate set output data therefrom. A decoder operable to process the set output data from the set of static flip-flops and to generate a set of old wordlines corresponding to a set of data addresses in the immediately preceding data capture cycle. Combinational is logic operable to receive the set of single changed bits and the set of old wordlines and to generate therefrom a set of new wordlines. Methods are also described herein for using the aforementioned system. | 02-02-2012 |
20120170395 | Data Flow Control in Multiple Independent Port - A system includes a memory controller and a plurality of memory devices connected in-series that communicate with the memory controller. Each of the memory devices has multiple independent serial ports for receiving and transmitting data. The memory controller a device address (DA) or ID number for designating a device that executes a command. Data contained in the command sent by the memory controller is captured by an individual link control circuit, in response to internally generated clock with appropriate latencies. The captured data is written into a corresponding memory bank. The data stored in one of a plurality of memory banks of one memory device is read in accordance with the addresses issued by the memory controller. The read data is propagated from the memory device through the series-connected memory devices to the memory controller. | 07-05-2012 |
20130064030 | SEMICONDUCTOR DEVICES, METHODS OF OPERATING SEMICONDUCTOR DEVICES, AND SYSTEMS HAVING THE SAME - A semiconductor device includes a selection circuit and a phase detector. The selection circuit, in response to a first selection signal output from a controller, outputs as a timing signal a first clock signal output from the controller or an output signal of a PLL using the first clock signal as a first input. The phase detector generates a voltage signal indicating a phase difference between a second clock signal output from the controller and the timing signal output from the selection circuit. The semiconductor device further includes a data port, a memory core storing data, and a serializer, in response to the timing signal output from the selection circuit, serializing data output from the memory core and outputting serialized data to the controller via the data port. The controller generates the first selection signal based on at least one of the voltage signal and the serialized data. | 03-14-2013 |
20160086642 | MEMORY BANDWIDTH AGGREGATION USING SIMULTANEOUS ACCESS OF STACKED SEMICONDUCTOR MEMORY DIE - A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin. | 03-24-2016 |