Class / Patent application number | Description | Number of patent applications / Date published |
356401000 | With registration indicia (e.g., scale) | 71 |
20080259334 | MULTI LAYER ALIGNMENT AND OVERLAY TARGET AND MEASUREMENT METHOD - A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields. | 10-23-2008 |
20080266562 | Image Locking System for Dna Micro-Array Synthesis - An image locking system for DNA micro-array synthesis provides a feedback system to stabilize or lock the image with respect to an image capture device, such as a camera and/or microscope. The image locking system includes the use of detection or reference marks. When a shift in image position is detected, a correction signal is sent to one of two mirrors, moving the image to correct for the shift in image position. The system comprises a first light beam directed towards a micromirror device that forms an alignment pattern on a reaction cell and a second light beam directed towards the micromirror device that forms a micro-array image on an active surface of the reaction cell. A camera captures the alignment pattern and an alignment mark. A computer calculates a correction signal to realign the alignment pattern with the alignment mark when movement is detected. | 10-30-2008 |
20090051917 | APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY - Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed. | 02-26-2009 |
20090116014 | Determining Overlay Error Using an In-chip Overlay Target - Overlay error between two layers on a substrate is measured using an image of an overlay target in an active area of a substrate. The overlay target may be active features, e.g., structures that cause the device to function as desired when manufacturing is complete. The active features may be permanent structures or non-permanent structures, such as photoresist, that are used define the permanent structures during manufacturing. The image of the overlay target is analyzed by measuring the light intensity along one or more scan lines and calculating a symmetry values for the scan lines. Using the symmetry values, the overlay error can be determined. | 05-07-2009 |
20090141276 | Scanning unit of a position measuring arrangement - A scanning unit of a position measuring arrangement for scanning a measuring graduation of a scale. The scanning unit includes a base body including an interior space; wherein the base body can be installed, fixed in place, on an object to be measured, wherein the base body comes into contact with a first contact face at a first location of the object to be measured. The scanning unit includes a heat-generating electrical component in the interior and a contact element with a second contact face which, in the course of installing the base body, enters into contact at a second location of the object to be measured. The scanning unit further including a heat-conducting element, which is designed for transferring heat generated by an electrical component from the interior space to the contact element. | 06-04-2009 |
20090147259 | METHOD OF ALIGNING A SUBSTRATE - In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned. | 06-11-2009 |
20090153861 | Alignment Method, Alignment System, and Product with Alignment Mark - The position of a product is measured using an alignment mark on the product. Radiation is transmitted towards the alignment mark and diffracted by a pattern in the alignment mark. Position information is determined from phase relations of the diffracted radiation. The alignment mark comprises a set of mutually parallel conductor tracks from which the diffracted radiation is collected, the pattern being defined by a pattern of variation of the pitch between successive tracks as a function of position along the surface of the product. Thus, for example the pattern comprises alternating first and second areas wherein the pitch has a first and second value, respectively. Because the tracks in the different parts of the pattern, such as the first and second areas, are parallel to each other improved measurements are possible. | 06-18-2009 |
20090153862 | TEST OBJECT USED FOR PROJECTING A SET OF MARKS TO INFINITY - The collimated test object according to the invention is used for projecting to infinity a set of marks, the positions of which are very accurately known so as to be able to verify the alignment et/or the distortion of optical equipment such as sensors or collimated screens. This test object comprises a plurality of microcollimated sets each comprising a light source, an elementary test object comprising a mark illuminated by said source as well as a collimation lens for projecting said mark to infinity. | 06-18-2009 |
20090185184 | ALIGNMENT APPARATUS FOR MANUFACTURING A LIQUID JET HEAD, AN ALIGNMENT METHOD FOR MANUFACTURING THE SAME AND METHOD OF MANUFACTURING A LIQUID JET HEAD UNIT - An alignment apparatus includes a mask | 07-23-2009 |
20090219533 | EXPOSURE METHOD, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING DEVICE - An exposure method comprises: a first detection step of detecting a position of a first mark by a first scope; a second detection step of detecting a position of a second mark by a second scope having a magnification higher than the first scope; a first calculation step of calculating a first correction value based on the detection results obtained in the first and second detection steps; a third detection step of detecting a position of a third mark by the second scope after the substrate is aligned based on the first correction value calculated in the first calculation step; a second calculation step of calculating a second correction value based on the detection results obtained in the second and third detection steps; and an exposure step of exposing the substrate after the substrate is aligned based on the second correction value calculated in the second calculation step. | 09-03-2009 |
20090231584 | PERIODIC PATTERNS AND TECHNIQUE TO CONTROL MISALIGMENT BETWEEN TWO LAYERS - A method and system to measure misalignment error between two overlying or interlaced periodic structures are proposed. The overlying or interlaced periodic structures are illuminated by incident radiation, and the diffracted radiation of the incident radiation by the overlying or interlaced periodic structures are detected to provide an output signal. The misalignment between the overlying or interlaced periodic structures may then be determined from the output signal. | 09-17-2009 |
20090251698 | METHOD AND SYSTEM FOR COLLECTING ALIGNMENT DATA FROM COATED CHIPS OR WAFERS - A process and system for determining alignment data for features on wafers or chips when a wafer or chip is substantially coated by an over bump applied material, e.g. a resin or film, and using that data to align the wafers or chips for subsequent operations such as dicing or joining. Position data for alignment is produced by identifying a location of an at least partially obscured feature by varying the depth of focus upon a work piece to determine an SNR approximating a maximum value from an image captured by optical scanning. An SNR above a threshold value can be employed. | 10-08-2009 |
20090251699 | APPARATUS AND METHOD FOR SEMICONDUCTOR WAFER ALIGNMENT - An apparatus for aligning semiconductor wafers includes equipment for positioning a first surface of a first semiconductor wafer directly opposite to a first surface of a second semiconductor wafer and equipment for aligning a first structure on the first semiconductor wafer with a second structure on the first surface of the second semiconductor wafer. The aligning equipment comprises at least one movable alignment device configured to be moved during alignment and to be inserted between the first surface of the first semiconductor wafer and the first surface of the second semiconductor wafer. The positioning equipment are vibrationally and mechanically isolated from the alignment device motion. | 10-08-2009 |
20090290158 | SEMICONDUCTOR WAFER - The present invention is a semiconductor wafer 1 including an orientation identification mark | 11-26-2009 |
20090303483 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus which aligns an original held by an original stage with a substrate held by a substrate stage, includes a measurement unit which measures the positional relationship between a mark of the original and a mark of the substrate stage, and a control unit which controls the measurement unit to execute the measurement by bringing the mark of the original and the mark of the substrate into the field of the measurement scope. The control unit controls the measurement unit to execute the measurement in accordance with a first procedure or a second procedure (in the first procedure, the mark attached on the original is measured by the measurement unit a number of times smaller than that in the second procedure), thereby performing the alignment in accordance with the results obtained by the executed measurement. | 12-10-2009 |
20090310137 | METHOD FOR ALIGNING WAFER AND ALIGNMENT APPARATUS USING THE METHOD - A method of aligning a wafer includes recognizing images of the wafer accommodated on a work table and a notch of the wafer using a camera, designating at least one notch point of the notch in a recognized image, producing at least one reference line using the designated notch point in the recognized image, designating a center point of the reference line in the recognized image, producing an imaginary line having an angle with respect to the reference line from the center point of the reference line in the recognized image, producing a center line of the wafer using the imaginary line in the recognized image, and aligning the wafer using an alignment apparatus to allow the center line of the wafer and an alignment line of the work table to be matched. | 12-17-2009 |
20100053616 | ALIGNMENT MARK AND METHOD OF GETTING POSITION REFERENCE FOR WAFER - An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected. | 03-04-2010 |
20100053617 | ALIGNMENT MARKER, DISPLAY DEVICE USING THE SAME, AND FABRICATION METHOD THEREOF - An alignment marker includes first marker element pieces for a first viewpoint and second marker element pieces for a second viewpoint different in plan shape. The first and second marker element pieces are respectively formed by dividing marker elements in such a way as to be equal in width to a predetermined marker element pitch. These pieces are arranged at the marker element pitch along an optical image separation direction of the optical image separation element. A predetermined number of the adjoining first and second pieces constitute one repetition cycle. A width of the repetition cycle is in accordance with an arrangement pitch of constituent elements of the optical image separation element. An existing optical image separation element can be used without the formation of the markers thereon and the alignment operation can be performed with a usual aligning and bonding apparatus. | 03-04-2010 |
20100091284 | APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY - Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1 | 04-15-2010 |
20100097608 | METHOD FOR DETERMINATION OF RESIDUAL ERRORS - There is provided a method for determining residual errors, compromising the following steps: in a first step, a test plate comprising a first pattern is used, and in a second step, a test plate comprising a second pattern which is reflected and/or rotated with respect to the first step is used. | 04-22-2010 |
20100110434 | Alignment for Edge Field Nano-Imprinting - Systems and methods for alignment of template and substrate at the edge of substrate are described. | 05-06-2010 |
20100128270 | Alignment Marks for Polarized Light Lithography and Method for Use Thereof - Mark and method for integrated circuit fabrication with polarized light lithography. A preferred embodiment comprises a first plurality of elements comprised of a first component type, wherein the first component type has a first polarization, and a second plurality of elements comprised of a second component type, wherein the second component type has a second polarization, wherein the first polarization and the second polarization are orthogonal, wherein adjacent elements are of different component types. The alignment marks can be used in an intensity based or a diffraction based alignment process. | 05-27-2010 |
20100195102 | IMPRINT LITHOGRAPHY - A method of determining the location of a lithographic substrate relative to an imprint template is disclosed. The method includes positioning the substrate adjacent to the imprint template such that an alignment grating on the substrate and an alignment grating on the imprint template form a composite diffraction grating, directing alignment radiation beam comprising radiation at a first wavelength and radiation at a second wavelength, the second wavelength being longer than the first wavelength, at the composite diffraction grating, detecting radiation diffracted from the composite grating during relative lateral movement between the imprint template and the substrate, using the detected radiation at the second wavelength to obtain information regarding a separation between the substrate alignment grating and the imprint template alignment grating, and using the detected radiation at the first wavelength to obtain information regarding the lateral position of the substrate alignment grating relative to the imprint template alignment grating. | 08-05-2010 |
20100214566 | LATERAL SHIFT MEASUREMENT USING AN OPTICAL TECHNIQUE - Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements include at least two measurements with different polarization states of incident light, each measurement including illuminating the measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between the diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers. | 08-26-2010 |
20100245825 | Substrate including alignment marks, methods of aligning wafers and fabricating semiconductors - Provided is a substrate having an alignment mark, methods of aligning wafers and fabricating semiconductors. An alignment method of a wafer comprises providing a wafer on a wafer stage of a photolithography apparatus, irradiating light to the alignment mark, collecting reflected light from the alignment mark, analyzing optical information of the collected light, and determining a location of the wafer based on the analyzed optical information, wherein the wafer comprises a first surface having an alignment mark, the alignment mark including a first plurality of alignment patterns in a first row, and a second plurality of alignment patterns in a second row, the second plurality of alignment patterns being adjacent to the first plurality of alignment patterns, wherein the first plurality of alignment patterns are arranged in a row direction at a first pitch, and the second plurality of alignment patterns are arranged in the row direction at a second pitch different from the first pitch. | 09-30-2010 |
20100265507 | INJECTION MOLDED MICROLENSES FOR OPTICAL INTERCONNECTS - Disclosed are a microlens array, and a method of positioning and aligning the microlens array on another device. Generally, the microlens array comprises an array of injection molded microlens elements, and a supporting flange. Each of the microlens elements has a generally spheroid or spherical shape, and the supporting flange connects together the array of microlens elements to facilitate positioning that array of lenses on a printed circuit board, semiconductor package or wafer. This array is well suited for use with vertical cavity surface emitting lasers (VCSELs); and, in particular, the preferred embodiment of the invention addresses the problem of VCSEL laser array alignment by using arrays of microlenses elements fabricated by injection molding. | 10-21-2010 |
20100284008 | Method of Determining Overlay Error and a Device Manufacturing Method - A method of determining an overlay error in which asymmetry of a first order of a diffraction pattern is modeled as being a weighted sum of harmonics. Both the first order harmonic and higher order harmonics are non-negligible and weights for both are calculated. The weights are calculated using three or more of sets of superimposed patterns using a least mean square method. | 11-11-2010 |
20100309470 | ALIGNMENT MARK ARRANGEMENT AND ALIGNMENT MARK STRUCTURE - An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and a second alignment pattern positioned directly above and overlapping with the first alignment pattern, the second alignment pattern including a plurality of parallel second stripes, wherein each of the second stripes of the second alignment pattern has a second dimension that is larger than the first dimension of each of the first stripes of the first alignment pattern. | 12-09-2010 |
20110001974 | ALIGNMENT APPARATUS AND FABRICATION APPARATUS FOR PLANAR MEMBER AND ALIGNMENT METHOD AND FABRICATION METHOD FOR PLANAR MEMBER - An alignment apparatus for a planar member includes, an image capturing unit which captures an image of a rotationally asymmetrical alignment mark provided on the planar member, a position detection unit which detects a position of the alignment mark from the image, a position adjusting unit which adjusts, based on the detected position of the alignment mark, the position of the planar member relative to a reference position, and an orientation detection unit which detects an orientation of the planar member based on the rotational asymmetry of the alignment mark captured in the image. | 01-06-2011 |
20110013188 | Object Alignment Measurement Method and Apparatus - A lithographic apparatus includes apparatus for measuring the alignment of an object. The measuring apparatus includes a plurality of alignment sensors, each including an alignment detector for measuring the position of an alignment mark over an alignment detection area. The measuring apparatus further includes a leveling sensor for measuring the height and/or tilt of an object in a leveling sensor detection area, and a feed-forward connection between said leveling sensor and said alignment sensors. | 01-20-2011 |
20110058170 | MULTI LAYER ALIGNMENT AND OVERLAY TARGET AND MEASUREMENT METHOD - A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields. | 03-10-2011 |
20110069314 | MULTILAYER ALIGNMENT AND OVERLAY TARGET AND MEASUREMENT METHOD - A target system for determining positioning error between lithographically produced integrated circuit fields on at least one lithographic level. The target system includes a first target pattern on a lithographic field containing an integrated circuit pattern, with the first target pattern comprising a plurality of sub-patterns symmetric about a first target pattern center and at a same first distance from the first target pattern center. The target system also includes a second target pattern on a different lithographic field, with the second target pattern comprising a plurality of sub-patterns symmetric about a second target pattern center and at a same second distance from the second target pattern center. The second target pattern center is intended to be at the same location as the first target pattern center. The centers of the first and second target patterns may be determined and compared to determine positioning error between the lithographic fields. | 03-24-2011 |
20110096329 | METHOD AND APPARATUS FOR MEASUREMENT AND CONTROL OF PHOTOMASK TO SUBSTRATE ALIGNMENT - A method, structure, system of aligning a substrate to a photomask. The method includes: directing incident light through a pattern of clear regions transparent to the incident light in an opaque-to-the-incident-light region of a photomask, through a lens and onto a photodiode formed in a substrate, the photodiodes electrically connected to a light emitting diode formed in the substrate, the light emitting diode emitting light of different wavelength than a wavelength of the incident lights; measuring an intensity of emitted light from light emitting diode; and adjusting alignment of the photomask to the substrate based on the measured intensity of emitted light. | 04-28-2011 |
20110157587 | TFT-LCD ARRAY SUBSTRATE, METHOD AND APPARATUS FOR DETECTING SIZE OR ALIGNMENT DEVIATION OF MULTILAYER PATTERNS - An embodiment provides a thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a substrate and multilayer array patterns formed on the substrate, and a detecting mark, which is used to detect the size or alignment deviation of one array pattern among the multilayer array patterns and provided in a region of the substrate where the multilayer array patterns are not provided. The detecting mark comprises a detecting area and a detecting pattern which is provided in the same layer as the array pattern to be detected, the detecting pattern is located within the detecting area, and the detecting pattern has transmissivity or reflectivity different from that of the remaining area in the detecting area other than the detecting pattern. | 06-30-2011 |
20110194112 | SEMICONDUCTOR WAFER ALIGNMENT MARKERS, AND ASSOCIATED SYSTEMS AND METHODS - Semiconductor wafer alignment markers and associated systems and methods are disclosed. A wafer in accordance with a particular embodiment includes a wafer substrate having an alignment marker that includes a first structure and a second structure, each having a pitch, with first features and second features positioned within the pitch. The first features are positioned to generate first phase portions of an interference pattern, with at least one of the first features having a width different than another of the first features in the pitch, and with the second features positioned to generate second phase portions of the interference pattern, with the second phase portions having a second phase opposite the first phase, and with at least one of the second features having a width different than that of another of the second features in the pitch. The pitch for the first structure is different than the pitch for the second structure. | 08-11-2011 |
20110317163 | Method of Aligning a Wafer and Method of Monitoring a Lithography Process Including the Same - A method of aligning a wafer includes irradiating light onto a plurality of alignment marks of a wafer, detecting signals outputted from the alignment marks to obtain alignment position offsets, selecting a set of the alignment marks corresponding to the alignment position offsets having a same or similar distribution, and aligning the wafer based the selected alignment marks. | 12-29-2011 |
20120008144 | Method of Aligning a Substrate - In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced. | 01-12-2012 |
20120057159 | Alignment Mark, Substrate, Set of Patterning Devices, and Device Manufacturing Method - An alignment mark determines alignment of a first and a second exposure on a substrate on a macro level and a micro level. The alignment mark includes a first alignment pattern projected during the first exposure and a second alignment pattern projected during the second exposure. The alignment mark includes a first sub-mark at least partially defined by the first alignment pattern and a second sub-mark at least partially defined by the second alignment pattern. Relative positions of the first and second sub-marks on the substrate are representative for alignment of the first and second exposures on the macro level. At least one sub-mark is defined by image lines of the first alignment pattern and the second alignment pattern, and wherein relative positions of image lines of the first alignment pattern and image lines of the second alignment pattern of the at least one sub-mark are representative for alignment of the first and second exposures on the micro level. | 03-08-2012 |
20120069337 | OVERLAY/ALIGNMENT MEASUREMENT METHOD AND OVERLAY/ALIGNMENT MEASUREMENT APPARATUS - According to one embodiment, a method includes preliminarily measuring the amount of overlay or alignment shift of the mark for overlay or alignment measurement while sequentially shifting a position of a measurement area relative to the mark for overlay or alignment measurement so as to position the mark for overlay or alignment measurement on each of a plurality of partial areas. The measurement area corresponds to a field angle of the optical measurement system, and an inside of the measurement area is two-dimensionally divided into the partial areas. The method includes calculating a tool-induced shift regarding a characteristic deviation of the optical measurement system for each of the plurality of partial areas based on a preliminarily measured result of the amount of overlay or alignment shift. The method includes determining a partial area to be used from among the plurality of partial areas on the basis of the tool-induced shift calculated for each of the plurality of partial areas. | 03-22-2012 |
20120147372 | OPTICAL-COMPONENT FABRICATING METHOD AND OPTICAL-COMPONENT FABRICATING APPARATUS - An optical-component fabricating method includes arranging a mask that has both an optical component pattern and an alignment mark pattern and a wafer that is developed through the mask at predetermined positions; exposing the optical component pattern and the alignment mark pattern onto the wafer; developing the alignment mark pattern that is exposed on the wafer; observing a position of the developed alignment mark pattern and moving the wafer in accordance with the position; repeating the exposing, the developing, and the moving a predetermined number of times;
| 06-14-2012 |
20120224176 | Parallel Acquisition Of Spectra For Diffraction Based Overlay - Spectra for diffraction based overlay (DBO) in orthogonal directions, i.e., along the X-axis and Y-axis, are acquired in parallel. A broadband light source produces unpolarized broadband light that is simultaneously incident on X-axis and Y-axis DBO targets. A polarization separator, such as a Wollaston prism or planar birefringent element, receives diffracted light from the X-axis and Y-axis DBO targets and separates the TE and TM polarization states of the diffracted light. A detector simultaneously detects the TE and TM polarization states of the diffracted light for both the X-axis DBO target and the Y-axis DBO target as a function of wavelength. | 09-06-2012 |
20120229807 | MARK STRUCTURE AND METHOD FOR MEASURING ALIGNMENT ACCURACY BETWEEN FORMER LAYER AND LATTER LAYER - A mark structure for measuring the alignment accuracy between a former layer and a latter layer with electron beam inspection (EBI) is described. The mark structure includes multiple divisions, each of which includes at least one region that includes multiple parts each disposed with a pair of a pattern of the former layer and a pattern of the latter layer. In each region, all of the parts have the same distance in a direction between the pattern of the former layer and the pattern of the latter layer. The distance in the direction is varied over the regions of the divisions of the mark structure. | 09-13-2012 |
20130044320 | Self-Calibrated Alignment and Overlay Target and Measurement - An alignment feature disposed on a substrate, the alignment feature including a first lithographic pattern having a first aggregate geometric center point defined by a first sub-pattern comprising alignment marks having a first sub-pattern geometric center point arranged a distance (d | 02-21-2013 |
20130107259 | OVERLAY TARGET GEOMETRY FOR MEASURING MULTIPLE PITCHES | 05-02-2013 |
20130148120 | OVERLAY MEASURING METHOD - According to one embodiment, an overlay measuring method includes calculating a first symmetry center coordinate on a basis of reflected light from first and second overlay measurement marks formed by using a first layer, calculating a second symmetry center coordinate on a basis of reflected light from third and fourth overlay measurement marks by using a second layer, and calculating an overlay displacement amount in a predetermined direction between the first layer and the second layer on a basis of the first and second symmetry center coordinates, in which the first to fourth overlay measurement marks have a plurality of space widths or pattern widths in the predetermined direction. | 06-13-2013 |
20130148121 | Device Manufacturing Method and Associated Lithographic Apparatus, Inspection Apparatus, and Lithographic Processing Cell - Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker. | 06-13-2013 |
20130148122 | METHOD OF MANUFACTURING DEVICE, AND SUBSTRATE - A method includes a first step of forming a circuit pattern and an alignment mark on a substrate and a second step of measuring a position of the alignment mark and positioning the substrate. The alignment mark includes a first linear pattern arranged on one side of a first straight line, a second linear pattern arranged on the other side of the first straight line, a third linear pattern arranged on one side of a second straight line, and a fourth linear pattern arranged on the other side of the second straight line. The first step includes determining total number of the third and fourth linear patterns to be formed and total number of the first and second linear patterns to be formed based on required precisions in directions along the first and second straight lines. | 06-13-2013 |
20130148123 | EXPOSURE METHOD, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING DEVICE - An exposure method comprises: a first detection step of detecting a position of a first mark by a first scope; a second detection step of detecting a position of a second mark by a second scope having a magnification higher than the first scope; a first calculation step of calculating a first correction value based on the detection results obtained in the first and second detection steps; a third detection step of detecting a position of a third mark by the second scope after the substrate is aligned based on the first correction value calculated in the first calculation step; a second calculation step or calculating a second correction value based on the detection results obtained in the second and third detection steps; and an exposure step of exposing the substrate after the substrate is aligned based on the second correction value calculated in the second calculation step. | 06-13-2013 |
20130155406 | Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology - Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error. | 06-20-2013 |
20130182255 | OVERLAY MARK AND APPLICATION THEREOF - An overlay mark for checking alignment accuracy between a former layer and a later layer on a wafer is described, including a former pattern as a part of the former layer, and a later pattern as a part of a patterned photoresist layer defining the later layer. The former pattern has two parallel opposite edges each forming a sharp angle α with the x-axis of the wafer. The later pattern also has two parallel opposite edges each forming the sharp angle α with the x-axis of the wafer. | 07-18-2013 |
20130208279 | IMAGE BASED OVERLAY MEASUREMENT WITH FINITE GRATINGS - An image based overlay measurement is performed using an overlay target that includes shifted overlying gratings. The overlay target is imaged and an asymmetry is measured in the image of the overlaid gratings. The asymmetry is used to determine the overlay error. For each measurement direction, the overlay target may include two or more overlay measurement pads with different offsets between the top and bottom gratings. The measured asymmetries and offsets in the overlay measurement pads may be used to determine the overlay error, e.g., using self-calibration. The pitch and critical dimensions of the overlay target may be optimized to produce a greatest change of symmetry with overlay error for a numerical aperture and wavelength of light used by the image based metrology device. | 08-15-2013 |
20130258339 | WAFER ALIGNMENT MARK SCHEME - A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide light directed to a backside of the wafer. The light detection device is configured to detect reflected light intensity from the backside of the wafer to find a position of at least one wafer alignment mark formed on the back side of the wafer. | 10-03-2013 |
20130258340 | TESTING APPARATUS AND TESTING METHOD FOR A TRAFFIC MONITORING DEVICE WITH A LASER SCANNER - A testing apparatus and a testing method for a traffic monitoring device with a laser scanner. The testing apparatus has an adjusting plate which provides a receiving place for receiving a traffic monitoring device which is to be tested and a measuring board. A line pattern along an imaginary straight line extending at the height of the reference scanning plane is provided on the measuring board which has a matte black surface. Vertical lines and a diagonal line are arranged on the straight line, and the diagonal line forms an angle with the straight line, which angle is selected in such a way that laser pulses emitted by the laser scanner form at least three laser spots with a reference laser spot width and a reference laser spot length on the diagonal line. | 10-03-2013 |
20130286395 | Tool Induced Shift Reduction Determination for Overlay Metrology - One embodiment relates to a method for semiconductor workpiece processing. In this method, a baseline tool induced shift (TIS) is measured by performing a baseline number of TIS measurements on a first semiconductor workpiece. After the baseline TIS has been determined, the method determines a subsequent TIS based on a subsequent number of TIS measurements taken on a first subsequent semiconductor workpiece. The subsequent number of TIS measurements is less than the baseline number of TIS measurements. | 10-31-2013 |
20130293889 | POSITION MEASURING APPARATUS, PATTERN TRANSFER APPARATUS, AND METHOD FOR MANUFACTURING A DEVICE - A position measuring apparatus configured to measure a position of an measured object using a plate-like scale including a grating pattern, includes a supporting unit configured to be arranged between a structure and the scale and to support the scale, in which the supporting unit includes a spring element that reduces vibration transferred from the structure to the scale in a plate thickness direction. | 11-07-2013 |
20130293890 | Overlay Targets with Orthogonal Underlayer Dummyfill - The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages. | 11-07-2013 |
20140168648 | ALIGNMENT DEVICE FOR EXPOSURE DEVICE, AND ALIGNMENT MARK - This alignment device is furnished with an alignment light source for emitting alignment light, and is housed with a camera for example. The alignment light source emits alignment light, doing so, for example, coaxially with respect to the optical axis of light detected by the camera. The alignment light illuminates a substrate and mask, and reflected light is detected by the camera. A microlens array for exposure use is present between a mask alignment mark and a substrate alignment mark, whereby an erect unmagnified image reflected from the substrate alignment mark is formed on the mask. A control device then uses the mask alignment mark and the substrate alignment mark detected by the camera to perform alignment of the substrate and the mask. Alignment of the substrate and the mask can be performed with high accuracy thereby. | 06-19-2014 |
20140240703 | Overlay Sampling Methodology - One embodiment relates to a method for overlay sampling. The method provides a number of fields over a semiconductor wafer surface. An inner subgroup of the number of fields includes fields in a central region of the wafer surface. An outer subgroup of the number of fields includes neighboring fields near a circumferential edge of the wafer surface. The method measures a first number of overlay conditions at a corresponding first number of overlay structures within a field of the inner subgroup. The method also measures a second number of overlay conditions at a corresponding second number of overlay structures within a field of the outer subgroup. The second number is greater than the first number. Based on the measured first number of overlay conditions and the measured second number of overlay conditions, the method determines an alignment condition for two or more layers on the semiconductor wafer surface. | 08-28-2014 |
20140240704 | MEASUREMENT MARK, METHOD FOR MEASUREMENT, AND MEASUREMENT APPARATUS - According to one embodiment, a measurement mark includes: a first line pattern, first lines extending in a first direction, the first lines arranged in a second direction in the first line pattern, the first line pattern capable of forming a first moire pattern by overlapping with an arrangement pattern including a pattern, and a first polymer and a second polymer being alternately arranged in the pattern; | 08-28-2014 |
20140240705 | SEMICONDUCTOR DEVICE, RETICLE METHOD FOR CHECKING POSITION MISALIGNMENT AND METHOD FOR MANUFACTURING POSITION MISALIGNMENT CHECKING MARK - According to one embodiment, there is provided a semiconductor device including a circuit area in which an integrated circuit is formed, a position misalignment checking mark of which a contrasting density is detected under polarized illumination and is not detectable under non-polarized illumination, and a peripheral pattern that is disposed on a periphery of the position misalignment checking mark and has a contrasting density that is not detectable under the polarized illumination. | 08-28-2014 |
20140240706 | OVERLAY SAMPLING METHODOLOGY - A process of measuring overlay metrologies of wafers, the wafer having a plurality of patterned layers. The process begins with retrieving historical overlay metrologies from a database, and real overlay metrologies of a first group of the wafers are measured. On the other hand, virtual overlay metrologies of a second group of the wafers are calculated with the retrieved historical overly metrologies. The real overlay metrologies of the first group of the wafers and the virtual overlay metrologies of the second group of the wafers are stored to the database as the historical overlay metrologies. | 08-28-2014 |
20140333931 | VISUAL ERROR CALIBRATION METHOD - A visual error calibration method configured to calibrate visual positioning errors of a laser processing apparatus is provided. The method includes: providing an alignment mark having at least one alignment point; locating a preset point of the alignment mark at a first preset position of a working area, and locating a preset image point at a preset position of the visible area; locating the alignment point at one of the second preset positions in the working area; adjusting parameters of a scanning module to locate an alignment image point at the preset position; relatively moving the alignment image point to positions of the visible area in sequence; recording the positions of the alignment image point in the visible area, the positions of the alignment point in the working area and the parameters of the scanning module, so as to produce an alignment table. | 11-13-2014 |
20150009499 | SYSTEMS AND METHODS FOR FABRICATING AND ORIENTING SEMICONDUCTOR WAFERS - A system for orienting a semiconductor wafer. The system includes a wafer retaining device configured to retain a semiconductor wafer, a light source configured to emit light toward an edge exclusion area of the wafer, and a lens configured to direct and focus light emitted from the light source at a subsurface first part of a first portion of the wafer to alter a crystalline structure of the subsurface first part and form a subsurface mark that is detectable using light of a predetermined wavelength, a predetermined transmittance through the wafer, and at a predetermined reflectance angle relative to an axis of rotation of the wafer and based on the predetermined wavelength. | 01-08-2015 |
20150138555 | OVERLAY METROLOGY SYSTEM AND METHOD - Overlay metrology systems are provided which include, for instance: a first metrology pattern including at least two first pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a first center position for the first metrology pattern being determinable in an X-Y coordinate layout from the at least two first pairs of sub-patterns; and a second metrology including at least two second pairs of sub-patterns, at least one sub-pattern lacking 90 degree rotational symmetry, and a second center position for the second metrology pattern being determinable in the X-Y coordinate layout from the at least two second pairs of sub-patterns. Methods of making overlay metrology systems are also provided, which include, for instance, providing a first metrology pattern and a second metrology pattern, and arranging the metrology patterns in relation to each other within the X-Y coordinate layout. | 05-21-2015 |
20150292877 | ESTIMATING AND ELIMINATING INTER-CELL PROCESS VARIATION INACCURACY - Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency. | 10-15-2015 |
20150308817 | SIMULTANEOUS MEASUREMENT OF MULTIPLE OVERLAY ERRORS USING DIFFRACTION BASED OVERLAY - A plurality of overlay errors in a structure is determined using a target that includes a plurality of diffraction based overlay pads. Each diffraction based overlay pad has the same number of periodic patterns as the structure under test. Additionally, each diffraction based overlay pad includes a programmed shift between each pair of periodic patterns. The pads are illuminated and the resulting light is detected and used to simultaneously determine the plurality of overlay errors in the structure based on the programmed shifts. The overlay errors may be determined using a subset of elements of the Mueller matrix or by using the resulting spectra from the pads. | 10-29-2015 |
20150369594 | POSITIONING GRAPHIC COMPONENT FOR SUBSTRATE DETECTION AND METHOD OF MANUFACTURING THE SAME - The present disclosure discloses a positioning graphic component for substrate detection and a method of manufacturing the same. The positioning graphic component for substrate detection comprises at least two layers of metal layer patterns and an insulation layer placed between any two layers of metal layer patterns. The present disclosure solves the problem of the occurrence of an incomplete positioning graphic component due to incomplete coverage by the insulation layer in processing TFT LCDs, thus improving the yield. | 12-24-2015 |
20160047744 | APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY - Disclosed is a scatterometry mark for determining an overlay error, critical dimension, or profile of the mark. The mark includes a first plurality of periodic structures on a first layer, a second plurality of periodic structures on a second layer, and a third plurality of periodic structures on a third layer that is underneath the first and second layer. The third periodic structures are perpendicular to the first and second structures, and the third periodic structures have one or more characteristics so as to result in a plurality of lower structures beneath the third periodic structures being screened from significantly affecting at least part of a spectrum of a plurality of scattered signals detected from the first and second periodic structures for determining an overlay error, critical dimension, or profile of the first and second periodic structures or at least one of such detected scattered signals. | 02-18-2016 |
20160131983 | OPTIMIZING THE UTILIZATION OF METROLOGY TOOLS - Methods and corresponding metrology modules and systems, which measure metrology parameter(s) of a previous layer of a metrology target and/or an alignment mark, prior to producing a current layer of the metrology target, derive merit figure(s) from the measured metrology parameter(s) to indicate an inaccuracy, and compensate for the inaccuracy to enhance subsequent overlay measurements of the metrology target. In an example embodiment, methods and corresponding metrology modules and systems use stand-alone metrology tool(s) and track-integrated metrology tool(s) at distinct measurement patterns to address separately different aspects of variation among wafers. | 05-12-2016 |
20160179017 | COMPOUND IMAGING METROLOGY TARGETS | 06-23-2016 |
20160253450 | METROLOGY USING OVERLAY AND YIELD CRITICAL PATTERNS | 09-01-2016 |