Entries |
Document | Title | Date |
20080211566 | Apparatus for Driving a Load - An apparatus for driving a load that may include, for instance, a semiconductor chip, comprising a first switch, and a fracture sensor. The apparatus may further include, for instance, a circuit disposed outside the semiconductor chip and comprising a second switch coupled in series with the first switch, and configured such that an on/off state of the second switch is set in accordance with a state of the fracture sensor. | 09-04-2008 |
20080252357 | DEVICE SELECT SYSTEM FOR MULTI-DEVICE ELECTRONIC SYSTEM - A device select system according to one embodiment includes an array of first electrical contacts adapted for coupling to a cable; an array of second electrical contacts adapted for coupling to an array of transducers, there being more second electrical contacts than first electrical contacts each of the first electrical contacts being associated with at least two of the second electrical contacts; and a select mechanism for selectively placing each of the first electrical contacts in electrical communication with one of the second electrical contacts associated therewith. | 10-16-2008 |
20090009231 | DEVICE AND METHOD FOR POWER SWITCH MONITORING - A device monitors at least one power switch which is series-mounted with a logic core between a first and a second potential. A connection point between the switch and logic core is carried to a third potential. The switch is biased by a biasing potential. The device includes a feedback control module mounted between first and second potentials which is capable of generating a set potential representative of the third potential variation. A biasing module of the power switch is mounted between the first and second potentials, and generates a biasing potential based on the set potential. The biasing potential linearly varies with the decrease of the third potential. | 01-08-2009 |
20090051406 | SEMICONDUCTOR DEVICE - A semiconductor device whose operational state is switched between a test state and a normal operational state according to a logical value of a signal input from the outside is provided. The semiconductor device includes a first power line, a second power line, a switch that is controlled by a signal line to couple/isolate the first power line to/from the second power line, a control circuit that outputs a control signal, and a state switching circuit that drives the signal line to couple/isolate the first power line to/from the second power line according to a logical value of the control signal when the input signal is one of logical values, whereas the state switching circuit drives the signal line to couple the first power line to the second power line when the first signal is the other logical value. | 02-26-2009 |
20090051407 | SWITCH CIRCUIT - A switch circuit is disclosed. The switch circuit comprises: a hysteresis buffer, an electric switch, a first discharge resistor, a second discharge resistor, a capacitor, a feedback resistor, a first reciprocal switch, and a second reciprocal switch. When the second reciprocal switch is turned on, a power supply voltage charges the capacitor, and thus the voltage on the signal input terminal of the hysteresis buffer is decreased. Accordingly, the voltage on the signal output terminal of the hysteresis buffer is decreased, so as to turn on the electric switch. When the first reciprocal switch is turned on, the capacitor is discharged, and thus the voltage on the signal input terminal of the hysteresis buffer is increased. Accordingly, the voltage applied to the signal output terminal of the hysteresis buffer is increased, so as to turn off the electric switch. | 02-26-2009 |
20090102539 | SWITCH ELEMENTS AND PIXELS - A pixel, according to the invention, comprises a pixel electrode, a data line, and a switch element. The switch element comprises a gate electrode, a first electrode, a second electrode, and a semiconductor layer. The first electrode is electrically connected to the pixel electrode and comprises a first portion and a second portion. The second portion has a curved structure and comprises a first terminal connected to the first portion and a second terminal. The first terminal of the second portion is substantially aligned with the second terminal thereof. The second electrode is electrically connected to the data line. The second electrode forms or the second electrode and the data line together form a concave area where the first electrode is disposed in. The semiconductor layer is disposed between the first electrode, the second electrode, and the gate electrode. | 04-23-2009 |
20090121774 | MONOLITHIC INTEGRATED CIRCUIT AND USE OF A SEMICONDUCTOR SWITCH - A monolithic integrated circuit is provided that includes a semiconductor switch, a constant current source, a capacitor, and a load circuit, which has a load capacitance. An output of the semiconductor switch is connected to the load circuit to turn on and off a supply voltage of the load circuit. The capacitor is connected to the output of the semiconductor switch and to a control input of the semiconductor switch. The constant current source can be or is connected to the control input of the semiconductor switch. Also, a use of a semiconductor switch is provided to reduce the leakage current of a load circuit of a monolithic integrated circuit. | 05-14-2009 |
20090140791 | Switching Element Control - An apparatus in an example comprises a switching element and diode-resistor coupling. The diode-resistor coupling controls timing characteristics of turn ON and turn OFF of the switching element. | 06-04-2009 |
20090153225 | Load Driving Device - A load driving device according to an aspect of the invention may includes an output transistor connected between a power supply line and an output terminal, a load connected between the output terminal and a first ground line, a control circuit connected between a gate of the output transistor and a second ground line, the control circuit controlling turning on/off of the output transistor, and a compensation transistor that turns on when a potential of the second ground line assumes a predetermined value or higher, thereby maintaining an off state of the output transistor. | 06-18-2009 |
20090167408 | POWER SWITCH ASSEMBLY FOR CAPACITIVE LOAD - A power switch assembly for a capacitive load | 07-02-2009 |
20090243701 | Power Supply with Digital Control Loop - One embodiment of an apparatus for switching a transistor includes a first current mirror providing i | 10-01-2009 |
20090322407 | Speed Recognition for Half Bridge Control - Circuit and method for controlling a high bridge circuit with increased efficiency is disclosed. Circuitry is provided outputting gating signals to a high side driver and a low side driver responsive to a time varying input signal. A frequency measurement circuit determines a high speed mode when the input signal is at a frequency above a threshold, and the gating signal to the high side driver is inhibited. When the input signal frequency is below the threshold, the low side driver and the high side driver gating signals switch alternately. In an exemplary implementation, the frequency measurement circuit is provided as two counters outputting signals to a decision circuit which controls the half bridge circuit. Methods are provided for efficiently providing gating signals to the drivers of a half bridge circuit based upon the frequency of the input signal. | 12-31-2009 |
20100073065 | INTEGRATED GATE DRIVER CIRCUIT AND DRIVING METHOD THEREFORE - An integrated gate driver circuit receives a plurality of clocks and includes a plurality of driving units cascaded in series. Each driving unit is for driving a load and includes an input terminal, an output terminal, a first switch and a second switch. The first switch has a first terminal coupled to the input terminal, a second terminal coupled to a first node, and a control terminal receiving a first clock, and the first switch is turned on when the first clock is at high level. The second switch has a first terminal receiving a second clock, a second terminal coupled to the output terminal, and a control terminal coupled to the first node, wherein the second clock charges and discharges the load through the second switch when the first node is at high level; wherein the output terminal of each driving unit is coupled to the input terminal of the immediately succeeding driving unit. | 03-25-2010 |
20100079192 | Drive for a half-bridge circuit - A method for driving a half-bridge is described. | 04-01-2010 |
20100079193 | SEMICONDUCTOR SWITCH AND METHOD FOR OPERATING A SEMICONDUCTOR SWITCH - A semiconductor switch, is provided that comprises a semiconductor element having a control terminal and two load terminals forming switching contacts of the semiconductor switch, a temperature measuring device for measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another, and also a control circuit connected between the temperature measuring device and the control terminal of the semiconductor element and having a control input forming the control contact of the semiconductor element, wherein provision is made for: measuring the temperatures of the semiconductor element at two measurement locations spaced apart from one another; providing a signal representing the difference between the two temperatures; driving a driving current of specific intensity into the control terminal of the semiconductor element if a corresponding signal is present at the control input in order to control the semiconductor element in the conducting state between its load terminals; increasing the intensity of the driving current if the semiconductor element is controlled in the conducting state and the temperature difference exceeds a first limit value. | 04-01-2010 |
20100085105 | CIRCUIT ARRANGEMENT INCLUDING A VOLTAGE SUPPLY CIRCUIT AND SEMICONDUCTOR SWITCHING ELEMENT - A circuit arrangement comprising a first semiconductor switching element, which has a load path and a drive terminal. A voltage supply circuit, is provided including an inductance connected in series with the load path of the first semiconductor switching element, and a capacitive charge storage arrangement, which is connected in parallel with the inductance and which has a first and a second output terminal for providing a supply voltage. | 04-08-2010 |
20100109748 | APPLIANCE CONTROL SYSTEM WITH A ZERO CROSSING DETECTING CIRCUIT - A control system includes a zero crossing detecting circuit for detecting a zero crossing of an AC signal. The circuit includes a transformer having a primary portion and a secondary portion. The primary portion receives the AC signal. The secondary portion comprises first and second terminals. The first terminal is biased at a first DC voltage level. An output switch is operatively connected to the second terminal and has an on state and an off state. The output switch selectively activates an output signal of the zero crossing detecting circuit according to an activation voltage level sensed by the output switch and corresponding to the zero crossing. While in the off state, the output switch is biased at a second DC voltage level. A voltage difference between the first and second DC voltage levels substantially equals the activation voltage level. A controller monitors the output signal and controls an operation based on the output signal. | 05-06-2010 |
20100109749 | SIGNAL TRANSMISSION PATH SELECTION CIRCUIT AND METHOD, AND ELECTRONIC DEVICE EMPLOYING THE CIRCUIT - An electronic device includes a central processing unit, a USB connector, a USB switch, and an audio path selector. The USB switch has a data transmission path and an audio signal transmission path for signal transmission between the central processing unit and the USB connector. The USB switch selects the data transmission path for data transmission according to a first selection signal from the central processing unit, and selects the audio signal transmission path for audio signal transmission according to a second selection signal from the central processing unit. The audio path selector interconnects the central processing unit and the USB switch, and has a first audio path for output of audio signals from the central processing unit to the audio signal transmission path, and a second audio path for output of audio signals from the audio signal transmission path to the central processing unit. | 05-06-2010 |
20100156505 | CIRCUIT ARRANGEMENT AND METHOD FOR GENERATING A DRIVE SIGNAL FOR A TRANSISTOR - Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. The control circuit transmits, depending on the switching signal for each switching operation of the transistor, switching information and switching parameter information via the transmission channel to the driver circuit. The driver circuit generates the drive signal depending on the switching information and depending on the switching parameter information. | 06-24-2010 |
20100277217 | INPUT/OUTPUT SIGNAL CONTROLLER - To easily judge a transmission signal outputted from an own electronic device. A transmission part | 11-04-2010 |
20100295601 | SEMICONDUCTOR DEVICE - A semiconductor device (antenna switch) causes a switch circuit to perform a switching operation by using a logic circuit. The switch circuit and the logic circuit are formed on a single semiconductor substrate and a shield conductor is provided or arranged directly over the logic circuit. The shield conductor can have an air bridge structure and can be connected to a ground terminal. | 11-25-2010 |
20110001543 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced. | 01-06-2011 |
20110050322 | SWITCHING CIRCUIT WITH GATE DRIVER HAVING PRECHARGE PERIOD AND METHOD THEREFOR - A switching circuit includes first and second transistors, and a driver circuit. The first transistor has a first current electrode coupled to a first power supply voltage terminal, a second current electrode, and a control electrode. The second transistor has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode coupled to a second power supply voltage terminal, and a control electrode. The driver circuit has an input for receiving an input signal, and an output coupled to the control electrode of the first transistor. The driver circuit precharges the control electrode of the first transistor to a first predetermined voltage, and in response to the input signal transitioning from a first logic state to a second logic state, the driver circuit provides a second predetermined voltage to the control electrode of the first transistor to cause the first transistor to be conductive. | 03-03-2011 |
20110057712 | SELF-HEALING TECHNIQUE FOR HIGH FREQUENCY CIRCUITS - A self-healing monolithic integrated includes an electronic circuit having a plurality of transistors. At least one sensor is disposed within and electrically coupled to the electronic circuit and configured to sense a performance metric of the electronic circuit. A plurality of actuators is disposed within the circuit. Each actuator of the plurality of actuators has electrically coupled to it a control terminal. The plurality of actuators is configured to perform a selected one of, electrically coupling at least one transistor of the plurality of transistors into the electronic circuit and electrically de-coupling at least one transistor of the plurality of transistors, in response to operation of one of the control terminals to improve the performance metric. | 03-10-2011 |
20110095808 | System and Method for Controlling Powered Device With Detachable, Controllable Switching Device - A device is provided for use with a power supply line and an electrical unit. The power supply line has a first connecting portion, whereas the electrical unit has a second connecting portion. The first connecting portion can detachably connect with the second connecting portion. The electrical unit can perform a function when the first connecting portion is electrically connected to the second connecting portion. The electrical unit can further consume power provided from the power supply line when not performing the function. The device includes a third connecting portion, a fourth connecting portion, a switching device and a control line. The third connecting portion can detachably connect to the first connecting portion. The fourth connecting portion can detachably connect to the second connecting portion. The switching device can electrically connect the third connecting portion to the fourth connecting portion when in a first state and can electrically disconnect the third connecting portion from the fourth connecting portion when in a fourth state. The control line can switch the switching device from the first state to the second state. | 04-28-2011 |
20110102054 | POWER SEMICONDUCTOR MODULE AND METHOD FOR OPERATING A POWER SEMICONDUCTOR MODULE - A power semiconductor module includes a normally on, controllable first power semiconductor switch including at least one first power semiconductor chip, and a normally off, controllable second power semiconductor switch including at least one second power semiconductor chip. The load paths of the first power semiconductor switch and of the second power semiconductor switch are connected in series. The control terminals of all first power semiconductor chips are permanently electrically conductively connected to a conductor track to which no load terminal of any of the first power semiconductor chips is permanently electrically conductively connected, and to which no load terminal and no control terminal of any of the second power semiconductor chips are permanently electrically conductively connected. | 05-05-2011 |
20110115543 | SEMICONDUCTOR DEVICE, METHOD FOR CONTROLLING THE SAME, AND DATA PROCESSING SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A semiconductor device includes a multiplexer and an output buffer. The multiplexer includes: n switches (n is an integer of 2 or greater) each including an input node receiving a different data signal and an output node coupled to an input node of the output buffer; and a plurality of switch control circuits each corresponding to a respective one of the n switches. Each of the plurality of switch control circuits turns on a corresponding one of the n switches based on a corresponding one of the signals each having a first cycle and a phase different by 1/n of the cycle from adjacent phases. When each of the plurality of switch control circuits detects that an input-side data signal of the corresponding one of the n switches appears at a corresponding output-side node, each of the plurality of switch control circuits turns off the corresponding switch. The multiplexer converts data, which is inputted in parallel to the n switches and which changes in the first cycle, into serial data that changes in 1/n of the first cycle and outputs the serial data via the output buffer. | 05-19-2011 |
20110156794 | GATE CONTROL CIRCUIT FOR HIGH BANDWIDTH SWITCH DESIGN - An analog switch configuration includes a gate control circuit coupled between an input of a switch and a gate of the switch. The gate control circuit passes voltage changes on the input of the switch to the gate of the switch to decrease the influence the inherent gate to input capacitance has on the bandwidth of the switch. By reducing the change in voltage across the inherent capacitance, the current through the capacitance in decreased as well as its influence on the bandwidth of the configuration. | 06-30-2011 |
20110187438 | Reducing current leakage in a semiconductor device - An integrated circuit, method of controlling power supplied to semiconductor devices, a method of designing an integrated circuit and a computer program product are disclosed. The integrated circuit comprises: a semiconductor device for handling data; a power source for powering said semiconductor device, said power source comprising a high voltage source for supplying a high voltage level and a low voltage source for supplying a low voltage level; a plurality of switching devices arranged between at least one of the high or low voltage sources and the semiconductor device. There is also a control device for controlling a first set of the plurality of switching devices to connect one of the high or low voltage sources to the semiconductor device and for controlling a second set of the plurality of switching devices to connect the one of the high or low voltage sources to the semiconductor device. At least some of the first set of the plurality of switching devices have a higher resistance when closed and providing a connection than at least some of the second set of the plurality of switching devices such that when the first set of the plurality of switching devices connect the semiconductor device to the one of the voltage sources the semiconductor device operates with a lower performance than when the second set of the plurality of switching devices connect the semiconductor device to the one of said voltage sources. | 08-04-2011 |
20110193614 | HIGH-FREQUENCY SWITCH MODULE AND HIGH-FREQUENCY SWITCH APPARATUS - A high-frequency switch module includes a multi-layer substrate, and a switch circuit mounted on the multi-layer substrate. The multi-layer substrate includes a terminal through which a plurality of high-frequency signals in a plurality of frequency bands are input and output, a plurality of switch terminals, terminals to which control signals to control the switch circuit are supplied, current paths that connect the terminals to the switch circuit, and resistors that are provided on the current paths and have resistance values greater than the resistance values of the current paths. The switch circuit connects the terminal to the switch terminals corresponding to the frequency bands of high-frequency signals input and output through the terminal based on the control signals. | 08-11-2011 |
20110199145 | SWITCHING CONTROL CIRCUIT - A switching-control circuit to control switching of a transistor whose input electrode is applied with an input voltage, and turn off the transistor, when an output current from the transistor is greater than a reference current, includes: a reference-voltage-generating circuit to generate such a first-reference voltage that the reference current is reduced with reduction in an output voltage; a comparing circuit to compare a voltage corresponding to the output current with the first-reference voltage; and a driving circuit to turn on/off the transistor based on a feedback voltage corresponding to the output voltage and a second reference voltage corresponding to a target level so that the output voltage reaches the target level, when the comparing circuit determines that the output current is smaller than the reference current, and turn off the transistor when the comparing circuit determines that the output current is greater than the reference current. | 08-18-2011 |
20120032727 | CIRCUIT BREAKER - A circuit breaker is provided that includes primary and secondary paths that extend between first and second terminals. The primary path extends between the first and second terminals and through a first switch. The secondary path extends between the first and second terminals and through the second switch and a semiconductor switching element. During normal operation, a control system maintains the first and second switches in closed position and the semiconductor switching element in blocking state. When a fault condition occurs in the load current, the control system detects the fault condition and sets the semiconductor switching element to conducting state. The control system then sets the first switch to open position such that the load current flows between the first and second terminals through the secondary path. The control system then sets the second switch to open position and the semiconductor switching element to blocking state. | 02-09-2012 |
20120062306 | Chip Comprising a Radio Frequency Switch Arrangement, Circuit Arrangement and Method for Producing a Radio Frequency Circuit Arrangement - A chip includes an RF switch arrangement that has a plurality of RF switches arranged jointly on the chip. Each of the RF switches has at least one first RF connection accessible from outside the chip and one second RF connection accessible from outside the chip. Furthermore, each of the RF switches is designed to activate, in response to a driving, at least one RF path between two of its RF connections. The RF connections of different switches from among the RF switches are separated from one another in terms of radio frequency. | 03-15-2012 |
20120092060 | RELIABLE LOW-COST HYBRID SWITCH MODULE FOR SWITCHED POWER DISTRIBUTION SYSTEMS - Disclosed are method and apparatus for implementing power distribution unit with a hybrid switching module. The apparatus comprises multiple outlets coupled to a hybrid switching module that switches on or off the plurality of outlets. The apparatus further comprises a single SSR for the hybrid switching module and two EMRs for an outlet and a controller that communicates with the hybrid switching module via digital line(s) to control power distribution. The apparatus comprises a display for displaying information related to the power outlets, two current detection circuitries for monitoring the total input current and an individual outlet, and a voltage detection circuitry for sensing voltages. The number of outlets may be scaled by using one or more hybrid switching module that share the single SSR. The apparatus further comprises an Internet server running thereon to interface with remote users to process the user's requests for the apparatus. | 04-19-2012 |
20120105129 | APPARATUS FOR MONOLITHIC POWER GATING ON AN INTEGRATED CIRCUIT - A power gating apparatus includes an integrated circuit package with a first voltage reference plane and a second voltage reference plane, and an integrated circuit that includes a circuit block, and a switch block. The first and second voltage reference planes may be electrically isolated from one another. The switch block may include a plurality of switches arranged in a ring surrounding the circuit block. The first voltage reference plane may be electrically coupled between an external voltage reference and the plurality of switches, and the second voltage reference plane may be electrically coupled between the plurality of switches and the circuit block. The second voltage reference plane may also distribute an electric current throughout the circuit block. In addition, each of the switches is configured to interrupt an electrical path between the first reference voltage plane and the circuit block in response to a control signal. | 05-03-2012 |
20120112815 | HIGH FREQUENCY SOLID STATE SWITCHING FOR IMPEDANCE MATCHING - In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor in or out of a variable capacitance element of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors are connected in parallel to provide variable impedance for the purpose of impedance matching. | 05-10-2012 |
20120146707 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a device that includes a first terminal operatively supplied with a pulse signal, a second terminal, a set of third terminals operatively supplied with identification information, a storage unit configured to store the identification information in response to the pulse signal, and a control unit configured to electrically disconnect the first terminal from the second terminal until the storage unit stores the identification information and electrically connect the first terminal to the second terminal after the storage unit has stored the identification information. This device may be used as each of semiconductor chips that are stacked with each other. | 06-14-2012 |
20120229190 | POWER SOURCE CONTROLLER AND SEMICONDUCTOR INTEGRATED CIRCUIT - According to one embodiment, a power source controller has a first power source line supplied with a reference power source voltage, a second power source line connected to an internal circuit, a control circuit configured to control a connection between the first power source line and the second power source line, a control signal line connected to the control circuit, and configured to provide a control signal for controlling the connection, a transistor comprising a first terminal, a second terminal and a control terminal in the control circuit, the control terminal of the transistor being connected to the control signal line, a semiconductor substrate on which the transistor is formed, and first through third wires. | 09-13-2012 |
20120242394 | HIGH-FREQUENCY SWITCH MODULE - In a high-frequency switch module, a switch IC is mounted on a multilayer board to define a high-frequency switch module. The multilayer board includes two internal wirings and two internal ground electrodes. The internal ground electrodes are spaced apart from each other at an interval when viewed from a lamination direction of the multilayer board. The first internal wiring is located on the upper surface side of the first internal ground electrode, and is entirely separated from an RF wiring, and the first internal wiring includes a power supply wiring for supplying power to the switch IC. The second internal wiring is located on the upper surface side of the second internal ground electrode, and is entirely separated from the power supply wiring, and the second internal wiring includes a signal wiring through which an RF signal propagates. | 09-27-2012 |
20120293237 | HIGH-FREQUENCY SWITCH MODULE AND HIGH-FREQUENCY SWITCH APPARATUS - A high-frequency switch module includes a multi-layer substrate, and a switch circuit mounted on the multi-layer substrate. The multi-layer substrate includes a terminal through which a plurality of high-frequency signals in a plurality of frequency bands are input and output, a plurality of switch terminals, terminals to which control signals to control the switch circuit are supplied, current paths that connect the terminals to the switch circuit, and resistors that are provided on the current paths and have resistance values greater than the resistance values of the current paths. The switch circuit connects the terminal to the switch terminals corresponding to the frequency bands of high-frequency signals input and output through the terminal based on the control signals. | 11-22-2012 |
20120319757 | SEMICONDUCTOR DEVICE HAVING PENETRATION ELECTRODES PENETRATING THROUGH SEMICONDUCTOR CHIP - Disclosed herein is a semiconductor device that includes: a first circuit formed on a chip having a main surface; first to n | 12-20-2012 |
20130002335 | DEVICE AND METHOD FOR ELECTRICALLY DECOUPLING A SOLAR MODULE FROM A SOLAR SYSTEM - Devices and methods for electrically decoupling a solar module from a solar system are described. In one embodiment, a solar system includes a string of a plurality of solar modules coupled with an inverter through a DC power line. An AC input is coupled with the DC power line. A device is also included and is configured to provide a closed circuit for one of the plurality of solar modules if an AC signal voltage from the AC input is present on the DC power line, and is configured to provide an open circuit for the one of the plurality of solar modules if no AC signal voltage from the AC input is present on the DC power line. | 01-03-2013 |
20130002336 | BIDIRECTIONAL SWITCH - A bidirectional switch according to one embodiment switches bidirectionally the direction of current flowing between a first and a second terminal, and includes: first and second series circuit sections including first and second semiconductor switch elements that do not have a tolerance in a reverse direction, and first and second reverse current blocking diode sections serially connected to the first and second semiconductor switch elements in a forward direction. The first series circuit section and the second series circuit section are connected in parallel between the first and second terminals so that the forward directions of the first and second semiconductor switch elements face opposite to each other. Each of the first and second reverse current blocking diode sections is configured by connecting in parallel a diode containing GaN as a semiconductor material and a diode containing SiC as a semiconductor material. | 01-03-2013 |
20130002337 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - Disclosed here is a semiconductor integrated circuit device configured to suppress a voltage drop over the route for transmitting voltages from a power cut-off switch to a power cut-off region without lowering the degree of freedom in routing signal wires in that region. The semiconductor integrated circuit device includes a semiconductor chip in which the power cut-off switch and power cut-off region are provided. A reduction in the number of wiring channels in the power-cut off region is avoided by locating the power cut-off switch outside the power cut-off region. Over the substrate, a substrate-side feed line is formed to transmit a power-supply voltage from the semiconductor chip to outside thereof via the power cut-off switch, before introducing the voltage again into the chip to feed the power cut-off region, thus suppressing the voltage drop between the power cut-off switch and the power cut-off region. | 01-03-2013 |
20130002338 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced. | 01-03-2013 |
20130015903 | RESISTOR-SHARING SWITCHING CIRCUITAANM Kim; Yu SinAACI Gyeonggi-doAACO KRAAGP Kim; Yu Sin Gyeonggi-do KRAANM Park; Sung HwanAACI SeoulAACO KRAAGP Park; Sung Hwan Seoul KR - Disclosed herein is a resistor-sharing switching circuit, including: a first switching element turning on/off between a first input and output terminal and a second input and output terminal; a second switching element turning on/off between the first input and output terminal and a third input and output terminal; a signal transmission unit connected to both a control terminal of the first switching element and a control terminal of the second switching element; and a resistor having one end connected to the signal transmission unit and the other end connected to a control signal input terminal. | 01-17-2013 |
20130015904 | POWER GATING CONTROL MODULE, INTEGRATED CIRCUIT DEVICE, SIGNAL PROCESSING SYSTEM, ELECTRONIC DEVICE, AND METHOD THEREFORAANM Priel; MichaelAACI HertzeliaAACO ILAAGP Priel; Michael Hertzelia ILAANM Rozen; AntonAACI GederaAACO ILAAGP Rozen; Anton Gedera ILAANM Shoshany; YossiAACI Gan YavneAACO ILAAGP Shoshany; Yossi Gan Yavne IL - An integrated circuit device comprising at least one signal processing module and a power gating control module arranged to control gating of at least one power supply to at least a part of the at least one signal processing module. The power gating control module is arranged to receive at least one operating parameter; configure at least one power gating setting of the power gating control module based at least partly on the at least one received operating parameter; and apply power gating for at least part of the at least one signal processing module in accordance with the at least one configured power gating setting. | 01-17-2013 |
20130027112 | INDUCTOR - This invention relates to an inductor, more particularly, to an inductor with variable inductances. | 01-31-2013 |
20130076429 | RF Switch Circuit, RF Switch and Method for Switching RF Signals - An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors. | 03-28-2013 |
20130082761 | SEMICONDUCTOR DEVICE HAVING INPUT RECEIVER CIRCUIT THAT OPERATES IN RESPONSE TO STROBE SIGNAL - Disclosed herein is a device that includes an input receiver circuit activated by a strobe signal to generate an output signal by comparing a potential of an input signal with a reference potential, and a noise canceller cancelling noise superimposed on the reference potential due to a change in the strobe signal. | 04-04-2013 |
20130169345 | ELECTRONIC RELAY, ELECTRONIC SYSTEM AND METHOD FOR SWITCHING A POWER CURRENT - The invention relates to an electronic relay with
| 07-04-2013 |
20130169346 | SWITCH CIRCUIT - A switch circuit includes: first, second, and third input-output terminals; a first switching element connected between the first and second input-output terminals; a second switching element connected between the third input-output terminal and a grounding point; a third switching element connected between the first and third input-output terminals; a fourth switching element connected between the second input-output terminal and the grounding point; a first control voltage applying terminal connected to control terminals of the first and second switching elements; a second control voltage applying terminal connected to control terminals of the third and fourth switching elements; first and second resistors connected between the control terminals of the first and second switching elements and the first control voltage applying terminal, respectively; and first and second diodes connected in parallel with the first and second resistors, respectively, and having cathodes connected to the first control voltage applying terminal. | 07-04-2013 |
20130194025 | DRIVING METHOD AND DRIVING CIRCUIT OF SCHOTTKY TYPE TRANSISTOR - A driving circuit of a schottky type transistor includes an input terminal supplied with an input signal, and an output terminal connected to a gate of the schottky type transistor. The driving circuit outputs a first voltage lower than a breakdown voltage of the schottky type transistor to the output terminal at the time of rising of the input signal, and thereafter supplies a second voltage higher than the breakdown voltage to a resistance connected to the output terminal. | 08-01-2013 |
20130200940 | SWITCHING DEVICE - The present invention provides a switching device capable of further minimizing the ON resistance of a switching element. Switching element has field application electrode that is connected to semiconductor substrate with insulating film interposed therebetween. Field control unit of driving unit is connected to field application electrode and source electrode of switching element, and applies a bias voltage Ve between field application electrode and source electrode. Field control unit applies an electric field from field application electrode to a hetero-junction interface of semiconductor substrate, by applying the bias voltage Ve exceeding a threshold value to switching element. In short, in the ON state of switching element, the electric field that is applied from field application electrode to semiconductor substrate works to increase electron concentration in a channel region by a field effect and decrease the ON resistance of switching element. | 08-08-2013 |
20130214845 | VERTICAL TRANSISTOR ACTUATION - A method of actuating a semiconductor device includes providing a transistor including a substrate and a first electrically conductive material layer stack positioned on the substrate. The first electrically conductive material layer stack includes a reentrant profile. A second electrically conductive material layer includes first and second discrete portions in contact with first and second portions of a semiconductor material layer that conforms to the reentrant profile and is in contact with an electrically insulating material layer that conforms to the reentrant profile. A voltage is applied between the first discrete portion and the second discrete portion of the second electrically conductive material layer. A voltage is applied to the first electrically conductive material layer stack to modulate a resistance between the first discrete portion and the second discrete portion of the second electrically conductive material layer. | 08-22-2013 |
20130222045 | SEMICONDUCTOR POWER MODULES AND DEVICES - An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a second transistor encased in a second package, the second transistor being mounted over a second conductive portion of the second package. The component further includes a substrate comprising an insulating layer between a first metal layer and a second metal layer. The first package is on one side of the substrate with the first conductive portion being electrically connected to the first metal layer, and the second package is on another side of the substrate with the second conductive portion being electrically connected to the second metal layer. The first package is opposite the second package, with at least 50% of a first area of the first conductive portion being opposite a second area of the second conductive portion. | 08-29-2013 |
20130234778 | SWITCHING-ELEMENT DRIVE CIRCUIT - A switching-element drive circuit that is configured to be applied to a power converter includes: a switching element; and a control unit that controls an operation of the switching element. The control unit includes a drive-voltage control unit that is configured to be capable of changing a switching speed of the switching element based on a power supply current. | 09-12-2013 |
20130265096 | LOAD CONTROL DEVICE - A load control device includes a switching unit which is connected to a power source and a load in series and has a switch device having a transistor structure, a control unit configured to control start-up and stop of the load, and a gate driving unit, which is electrically insulated from the control unit and outputs a gate driving signal to the gate electrode of the switch device. The control unit controls the gate driving unit to supply a higher driving power to the gate electrode of the switch device for a predetermined period of time starting at the start-up of the load than that in a steady state. | 10-10-2013 |
20130271201 | System on Chip for Power Inverter - According to an exemplary implementation, an integrated circuit (IC) includes a logic circuit monolithically formed on the IC. The logic circuit is configured to generate modulation signals for controlling power switches of a power inverter. The logic circuit generates the modulation signals based on at least one input value. The IC further includes a voltage level shifter monolithically formed on the IC. The voltage level shifter is configured to shift the modulation signals to a voltage level suitable for driving the power switches of the power inverter. The logic circuit can be a digital logic circuit and the input value can be a digital input value. The IC can also include a sense circuit monolithically formed on the IC. The sense circuit is configured to generate the input value. | 10-17-2013 |
20130293281 | CIRCUIT ARRANGEMENT AND METHOD FOR OPERATING A CIRCUIT ARRANGEMENT - According to one aspect of this disclosure, a circuit arrangement is provided, the circuit arrangement including an electronic component coupled to at least one common power supply node and configured to provide a first signal having a variation in time that is based on power supply via the at least one common power supply node; a detecting circuit coupled to the electronic component, the detecting circuit being configured to detect the first signal and to provide a digital switch array control signal based on the variation in time of the first signal; and a switch array coupled between the at least one common power supply node and at least one power supply source, the switch array being configured to control the power supply via the at least one common power supply node based on the digital switch array control signal. | 11-07-2013 |
20140184308 | SYSTEMS AND METHODS FOR CONTROL OF POWER SEMICONDUCTOR DEVICES - A device includes a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT). The controller is configured to receive one or more voltage values associated with the IGBT, and generate a gating signal and transmit the gating signal to the IGBT. The gating signal is configured to activate or deactivate the IGBT. The controller is configured to generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate an active switching device. The active switching device is configured to periodically limit the one or more voltage values associated with the IGBT based at least in part on one or more characteristics of the voltage clamping signal. | 07-03-2014 |
20150028935 | CIRCUIT BREAKER AND METHOD OF CONTROLLING A POWER TRANSISTOR WITH A CIRCUIT BREAKER - An embodiment of an apparatus, such as a circuit breaker, includes an input node, an output node, and a digital circuit. The input node is configured to receive an input voltage, and the output node is coupled to the input node and is configured to carry an output current. And the digital circuit is configured to uncouple the output node from the input node in response to a power drawn from the input node exceeding a threshold. | 01-29-2015 |
20150061750 | Method and Circuit for Controlling Turnoff of a Semiconductor Switching Element - A circuit performs a method for controlling turn-off of a semiconductor switching element. The method includes determining at least one operating parameter for the semiconductor switching element during an operating cycle and determining a gate discharge current based on the at least one operating parameter. The method further includes supplying the gate discharge current to a gate of the semiconductor switching element during a subsequent operating cycle to turn off the semiconductor switching element. | 03-05-2015 |
20150116024 | COMPOSITE SEMICONDUCTOR SWITCHING DEVICE - A composite semiconductor switching device includes: a first semiconductor element that incurs switching losses when performing switching operation of turning on and off; a second semiconductor element that is parallelly connected to the first semiconductor element and incurs switching losses larger than the first semiconductor element when performing switching operations of turning on and off; and a controller that operates in order of giving a first on-command signal to the first semiconductor element, giving a second on-command signal to the second semiconductor element, deactivating the first on-command signal, giving a third on-command signal to the first semiconductor element, and deactivating the second on-command signal. | 04-30-2015 |
20150355250 | CONSTANT PERIOD SIGNAL MONITORING CIRCUIT AND LOAD CONTROL BACKUP SIGNAL GENERATING CIRCUIT - A constant period signal monitoring circuit for monitoring a constant period signal that is output periodically when a control processor operating according to a program is normal, includes a signal input terminal that receives the constant period signal, an edge detection section that detects a change of the constant period signal appearing at the signal input terminal from a low level to a high level or from a high level to a low level as an edge of the constant period signal, and a time measuring section that measures a length of the time during which a state of not detecting the edge continues on the basis of an output of the edge detection section and outputs an abnormality detection signal in a case that the measured time exceeds a threshold value. | 12-10-2015 |
20160173082 | METHOD FOR PERFORMING IMPEDANCE PROFILE CONTROL OF A POWER DELIVERY NETWORK IN AN ELECTRONIC DEVICE, AND ASSOCIATED APPARATUS | 06-16-2016 |
20160204697 | DECODE SWITCH AND METHOD FOR CONTROLLING DECODE SWITCH | 07-14-2016 |