Class / Patent application number | Description | Number of patent applications / Date published |
327423000 | Bridge circuit | 18 |
20090058498 | HALF BRIDGE CIRCUIT AND METHOD OF OPERATING A HALF BRIDGE CIRCUIT - A half bridge circuit has a first switch having at least one control gate and a second switch having at least two control gates. A first driver has an output connected to a control gate of the first switch. A second driver has an output connected to a first control gate of the second switch. The output of the first driver is connected to a second control gate of the second switch by a circuit arrangement such that when the first driver is operated to apply a high, positive voltage to the control gate of the first switch, a positive voltage is applied to the second control gate of the second switch, and such that when the first driver is operated to apply a low, zero or small voltage to the control gate of the first switch, a negative voltage is applied to said second control gate of the second switch. | 03-05-2009 |
20090219075 | Full Bridge Arrangement - A full bridge that produces an alternating output signal can be driven by operating switching elements of the full bridge in each period in a switching sequence that determines the order of the activation and deactivation of the switching elements. The switching elements are switched in at least two different switching sequences, a first switching sequence is repeated n times before a second switching sequence is carried out, with n>1, or the switching elements are switched in at least three different switching sequences. | 09-03-2009 |
20100026370 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 02-04-2010 |
20130009690 | H BRIDGE DRIVER CIRCUIT - A PWM mode for turning on and off two output transistors by an output of a high impedance circuit and a constant voltage mode for controlling voltages at two output terminals by an output of an op amp are provided. Then, the two modes are switched by a switching signal. | 01-10-2013 |
20130027113 | Power Semiconductor Chip Having Two Metal Layers on One Face - A semiconductor chip includes a power transistor circuit with a plurality of active transistor cells. A first load electrode and a control electrode are arranged on a first face of the semiconductor chip, wherein the first load electrode includes a first metal layer. A second load electrode is arranged on a second face of the semiconductor chip. A second metal layer is arranged over the first metal layer, wherein the second metal layer is electrically insulated from the power transistor circuit and the second metal layer is arranged over an area of the power transistor circuit that comprises at least one of the plurality of active transistor cells. | 01-31-2013 |
20140240029 | BRIDGE SWITCH CONTROL CIRCUIT AND METHOD OF OPERATING THE SAME - A method of operating a bridge switch control circuit is disclosed for controlling at least one pair of complementary switches. First, a first driving signal, a second driving signal, a first latching signal, and a second latching signal are provided. The first driving signal and the second driving signal drive the complementary switches. Afterward, it is to judge whether the first driving signal triggers one of the complementary switches by a rising-edge manner. If YES, the first latching signal is controlled at a high-level status and the second latching signal is simultaneously controlled at a low-level status. Afterward, it is to judge whether the second driving signal triggers the other of the complementary switches by a rising-edge manner. If YES, the second latching signal is controlled at a high-level status and the first latching signal is simultaneously controlled at a low-level status. | 08-28-2014 |
327424000 | Field-effect transistor | 12 |
20080290927 | Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 11-27-2008 |
20090015314 | HIGH FREQUENCY EXCITATION SYSTEM - A power module is adapted to be connected to a voltage source and to supply power to a load. The power module includes a power transistor; and a gate controller for driving the power transistor. The gate controller includes a gate transformer, and an impulse generator that extends a negative drive phase of a gate voltage to the power transistor relative to a positive drive phase of the gate voltage to the power transistor. | 01-15-2009 |
20090189676 | Semiconductor device - A semiconductor device includes a first conductive type first transistor, a first conductive type second transistor, a first power supply pad arranged between the first transistor and the second transistor and supplying a first potential, a second conductive type third transistor, a second conductive type fourth transistor, a second power supply pad arranged between the third transistor and the fourth transistor and supplying a second potential, a first output pad arranged between the first transistor and the third transistor, and a second output pad arranged between the second transistor and the fourth transistor, in which a direction in which a line connecting the first power supply pad with the second power supply pad extends is perpendicular to a direction in which a line connecting the first output pad with the second output pad extends. | 07-30-2009 |
20090201072 | BRIDGE CIRCUITS AND THEIR COMPONENTS - A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor. | 08-13-2009 |
20090295455 | SYSTEM FOR CONTROLLING AN ELECTRONIC DRIVER FOR A NEBULISER - A system for controlling an electronic driver for a nebuliser or aerosol, the system comprising: an H-bridge driver for connection around a membrane to be driven; a voltage source for applying a voltage to the H-bridge driver; a feedback loop from the H-bridge to a phase shift oscillator, the output of which enters the H-bridge driver; wherein the H-bridge driver includes at least one sense resistor for detecting the phase angle between the applied voltage to the H-bridge driver and the applied current. | 12-03-2009 |
20110187439 | OUTPUT CIRCUIT - A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal. | 08-04-2011 |
20130141154 | OUTPUT CIRCUIT - A low-side off-detection signal compares the gate signal of a low-side transistor with a predetermined first level to generate a low-side off-detection signal indicating that the low-side transistor is off. The low-side detection transistor is of the same type as the low-side transistor, with the source connected to the ground terminal, and the gate receiving the low-side transistor gate signal. A first resistor is arranged between the drain of the low-side detection transistor and the power supply terminal. A first bypass circuit is arranged in parallel with the first resistor, and is configured to switch to the conduction state when a control signal is a level which instructs the low-side transistor to switch off, and to switch to the cut-off state when the control signal level instructs the low-side transistor to switch on. The drain signal of the low-side detection transistor is output as the low-side off-detection signal. | 06-06-2013 |
20130154716 | Circuit Topology for a Phase Connection of an Inverter - A circuit for a phase connection of an inverter includes upper and lower bridge halves and respectively associated upper and lower bridge segments. Each bridge half has an outer switch and an inner switch connected in series. Each bridge segment has a diode and the inner switch of the associated bridge half connected in series. An output of the circuit is respectively connected to upper and lower potentials through the outer switches and is further connected to a center potential applied between the upper and lower potentials through each of the upper and lower bridge segments. Each bridge half further has a parallel power switch. The parallel switch of each bridge half is connected in parallel to the series-connected outer and inner switches of the bridge half. The output of the circuit is further respectively connected to the upper and lower potentials through the parallel switches. | 06-20-2013 |
20130249622 | BRIDGE CIRCUITS AND THEIR COMPONENTS - A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor. | 09-26-2013 |
20130257514 | SOURCE-FOLLOWER BASED VOLTAGE MODE TRANSMITTER - An apparatus is provided. A first switch is coupled between first and third nodes in an H-bridge. A second switch is coupled between first and fourth nodes in the H-bridge. A third switch is coupled between the second and third nodes. A fourth switch is coupled between second and fourth nodes in the H-bridge. A first source-follower is coupled to the first node of the H-bridge and the first supply rail, and the first source-follower is configured to receive a first reference signal. A second source-follower is coupled to the second node of the H-bridge and the second supply rail, and the second source-follower is configured to receive a second reference signal. | 10-03-2013 |
20150070076 | BRIDGE CIRCUITS AND THEIR COMPONENTS - A half bridge is described with at least one transistor having a channel that is capable in a first mode of operation of blocking a substantial voltage in at least one direction, in a second mode of operation of conducting substantial current in one direction through the channel and in a third mode of operation of conducting substantial current in an opposite direction through the channel. The half bridge can have two circuits with such a transistor. | 03-12-2015 |
20150311196 | Integrated Semiconductor Device Having a Level Shifter - An integrated semiconductor device is provided. According to an embodiment, the integrated semiconductor device includes a semiconductor body having a first surface with a normal direction defining a vertical direction, an opposite surface, a first area including a vertical power field-effect transistor structure, a second area including a three-terminal step-down level-shifter, and a third area including a three-terminal step-up level-shifter. A terminal of the vertical power field-effect transistor structure is electrically connected with one of the three-terminal step-down level-shifter and the three-terminal step-up level-shifter. | 10-29-2015 |