Class / Patent application number | Description | Number of patent applications / Date published |
326031000 | Signal level or switching threshold stabilization | 64 |
20090201048 | REDUCING ERRORS IN DATA BY DYNAMICALLY CALIBRATING TRIGGER POINT THRESHOLDS - Methods, systems, computer readable media and means for reducing errors in data caused by noise are provided. In some embodiments of the present invention, circuitry of the device receives timing data from one or more other circuitries and identifies noiseless periods from the timing data. The circuitry then actively adjusts the trigger point threshold of data being transmitted to and/or from the circuitry only during the noiseless periods. The circuitry subsequently monitors the timing data to identify noise periods. In response to identifying a noise period, the device ceases to adjust the trigger point threshold until the noise period is over. | 08-13-2009 |
20100253386 | DATA TRANSMITTER AND RELATED SEMICONDUCTOR DEVICE - A semiconductor device transmitting a plurality of data using a multilevel signal includes a parity bit control unit generating a parity bit that varies with a number of data in which a most significant bit (MSB) and least significant bit (LSB) are different. A data conversion unit either inversely outputs the MSB or the LSB, or outputs the data without a change in response to the parity bit. Transmission units transmit data provided by the data conversion unit using the multilevel signal. | 10-07-2010 |
20120176152 | Circuitry and Method Minimizing Output Switching Noise Through Split-Level Signaling and Bus Division Enabled by a Third Power Supply - Disclosed herein are circuitry and methods for transmitting data across a parallel bus using both high common mode and low common mode signaling. The transmitter stages are configured to work with two of three possible power supply voltages: a high Vddq voltage, a low Vssq voltage, and an intermediate Vx voltage. In one embodiment, the odd numbered transmitter stages, that drive the odd numbered outputs to the bus, use the Vddq and Vx supplies, such that the odd numbered outputs comprise high common mode signals. The even numbered transmitter stages, that drive the even numbered outputs to the bus, use the Vx and Vssq supplies, such that the even numbered outputs comprise low common mode signals. | 07-12-2012 |
20130328589 | SEMICONDUCTOR DEVICE BASED ON POWER GATING IN MULTILEVEL WIRING STRUCTURE - A semiconductor device includes: first and second circuit cell arrays extending in first direction; first and second power supply lines each extending in first direction and arranged over first circuit cell array, first power supply line being supplied with first power source voltage; third power supply line extending in first direction separately from second power supply line, arranged over second circuit cell array, and supplied with second power source voltage; first transistor coupled between second and third power supply lines; and first circuit arranged on first circuit cell array and operating on first and second power source voltages supplied from first and second power supply lines, respectively. | 12-12-2013 |
20140084958 | LOW-VOLTAGE, HIGH-SPEED, CURRENT-MODE LATCH WITH INDUCTOR TAIL AND COMMON-MODE FEEDBACK FOR AMPLITUDE AND CURRENT CONTROL - Described herein is a low-voltage circuit with an inductor tail and a common mode feedback loop for amplitude and current control. A first transistor pair can receive clock inputs, and a second transistor pair can receive data inputs and output the data to a logic gate. A tail inductor can be coupled to the first transistor pair to suppress high frequency common mode bounce induced by clock transitions in independent common emitter branches. A common mode feedback loop can be provided to maintain a constant average current. The common mode feedback loop and the tail inductor can together function in the same way as a tail current source at low frequencies and high frequencies respectively. | 03-27-2014 |
20150022235 | SEMICONDUCTOR DEVICE - The disclosed invention provides a semiconductor device capable of suitably controlling the level of an enable signal to resolve NBTI in a PMOS transistor. An input node receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby. A detection unit receives a signal through the input node and outputs an enable signal. The detection unit sets the enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period. A signal transmission unit includes a P-channel MOS transistor and transmits a signal input to the input node according to control by the enable signal. | 01-22-2015 |
20150145557 | SERIAL TRANSMISSION DRIVING METHOD - The present invention discloses a serial transmission driving method, wherein a serial transmission driving device (STD) is connected with a first terminal (FT) and a second terminal (ST) of an equivalent load capacitor through a first differential bus (FDB) and a second differential bus (SDB). FDB and SDB are respectively connected with a high-potential terminal (HPT) and a low-potential terminal (LPT) through a first equivalent resistor and a second equivalent resistor. STD receives a trigger signal (TS) appearing during the transition between a turn-on signal (Ton) and a turn-off signal (Toff), generates a first potential (FP) and a second potential (SP) greater than FP according to TS, and respectively applies FP and SP to SDB and FDB. FP and SP fast change the potential of FT to be greater than that of ST. HPT and LPT maintain potentials of FDB and SDB until Toff ends. | 05-28-2015 |
326032000 | Temperature compensation | 2 |
20080265935 | INTEGRATED MULTI-FUNCTION ANALOG CIRCUIT INCLUDING VOLTAGE, CURRENT, AND TEMPERATURE MONITOR AND GATE-DRIVER CIRCUIT BLOCKS - An integrated multi-function analog circuit includes at least one MOSFET gate-drive circuit coupled to a first I/O pad. At least one voltage-sensing circuit is coupled to a second I/O pad. At least one current-sensing circuit is coupled to the second I/O pad and a third I/O pad. At least one temperature-sensing circuit is coupled to a fourth I/O pad. | 10-30-2008 |
20140152341 | EXTERNAL COMPONENT-LESS PVT COMPENSATION SCHEME FOR IO BUFFERS - Disclosed is a system and method for providing Process-Voltage-Temperature (PVT) compensation for an Input/Output interface. An embodiment may connect an analog section and a digital section together to generate and measure an oscillation frequency (F | 06-05-2014 |
326033000 | Bias or power supply level stabilization | 23 |
20080211537 | Open drain output circuit - The transition time of an output is sometimes changed by a certain supply voltage connected to an output terminal of an output circuit. An output circuit to address this problem includes: a level detection circuit which detects a pull-up supply voltage applied to an output terminal OUT; and an open drain buffer circuit which can switch its driving ability on the basis of the detection result of the level detection circuit. Even if the output circuit is connected to a circuit whose supply voltage is different, it is made possible to produce an output while stabilizing the transition time of the output. | 09-04-2008 |
20080224729 | INTEGRATED CIRCUITS WITH REDUCED LEAKAGE CURRENT - In one embodiment, NMOS transistors have their source coupled to a common source node such that the NMOS transistors conduct a leakage current if the common source node is grounded. To reduce this leakage current, the common source node is raised in potential. Similarly, PMOS transistors have their source coupled to a common source node such that the PMOS transistors conduct a leakage current if the common source node is charged to a power supply voltage VDD. To reduce this leakage current, the common source node is lowered in potential. | 09-18-2008 |
20080278194 | Semiconductor integrated circuit and operation method of the same - A semiconductor integrated circuit including on the same semiconductor substrate: a first circuit block including a switching transistor which is off when the first circuit block is inactive and on when the first circuit block is active, the first circuit block including internal circuits adapted to provide predetermined functions, the internal circuits being connected to a first power line maintained at a low-level source voltage; a second circuit block including internal circuits adapted to provide predetermined functions, the internal circuits being connected to a second power line maintained at a low-level source voltage; a power line switch section connected between the first and second power lines; and a control circuit adapted to control the power line switch section so that the first and second power lines are connected together at a later timing or gradually over a longer period of time than the switching transistor turns on. | 11-13-2008 |
20090009214 | Semiconductor device reducing power consumption in standby mode - A voltage supply control circuit is arranged between a true ground voltage and a pseudo ground line. In an active mode, first and second control signals are at the “H” and “L” levels, respectively. In response to this, a first switch is turned on so that a first node is electrically coupled to a power supply voltage, and attains the “H” level. Further, a second switch is turned on to couple electrically the ground voltage to a second node. In a standby mode, the first and second control signals are at the “L” and “H” levels, respectively. In response to this, a third switch is turned on to couple electrically the first and second nodes together. Since the power supply voltage was electrically coupled to the first node according to the turn-on of the first switch in the active mode, the path of the control signal including the first node to the switch has accumulated charged charges. | 01-08-2009 |
20090146685 | CALIBRATION CIRCUIT OF ON-DIE TERMINATION DEVICE - A calibration circuit of an on-die termination device includes a code generating unit configured to receive a voltage of a calibration node connected to an external resistor and a reference voltage to generate pull-up calibration codes. The calibration circuit also includes a pull-up calibration resistor unit configured to pull up the calibration node in response to the pull-up calibration codes. The pull-up calibration resistor unit is calibrated such that its resistance becomes higher as a power supply voltage increases. | 06-11-2009 |
20090189636 | CIRCUIT HAVING LOGIC STATE RETENTION DURING POWER-DOWN AND METHOD THEREFOR - A storage circuit has an input for receiving and storing data, a first power terminal coupled to a first conductor for receiving a first power supply voltage, and a second power terminal coupled to a second conductor. A power gate device has a first terminal coupled to the second conductor, a control terminal for receiving a bias voltage in response to a control signal, and a second terminal coupled to a terminal for receiving a second power supply voltage. A shorting device selectively electrically short circuits the first terminal of the power gate device to the control terminal of the power gate device in response to the control signal, thereby converting the power gate device from a transistor into a diode-connected device. The shorting device is smaller in size than the power gate device. | 07-30-2009 |
20090251171 | Methods and Apparatus for Monitoring Power Gating Circuitry and for Controlling Circuit Operations in Dependence on Monitored Power Gating Conditions - A circuit incorporating a current starved ring oscillator is coupled to a power gate switch in an integrated circuit. The circuit incorporating the current starved ring oscillator amplifies a voltage difference between a virtual ground associated with the power gate switch and ground, and converts the difference to a frequency. Digital logic monitors the output of the ring oscillator using a counter and a reference clock. Control circuitry controls operation of the integrated circuit in dependence on the monitored conditions associated with the power gate switch. A method monitors a virtual ground voltage across a power gate switch in an integrated circuit; and controls operation of the integrated circuit in dependence on the monitored virtual ground voltage. | 10-08-2009 |
20100066406 | Semiconductor device - The semiconductor device may include, but is not limited to, a first switching circuit, a second switching circuit, and a control circuit. The first switching circuit switches between first and second states. The second switching circuit switches between the first and second states. The second switching circuit reduces a first power impedance across the first switching circuit. The control circuit is coupled to the first and second switching circuits. The control circuit keeps the first switching circuit in the first state. The control circuit switches the second switching circuit from the second state to the first state. | 03-18-2010 |
20100231255 | Power Gating Circuit and Integrated Circuit Including Same - A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail. | 09-16-2010 |
20110109345 | LOGIC CIRCUIT - A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth | 05-12-2011 |
20110133775 | INTERFACE CIRCUIT - An interface of the present invention includes a first inverter circuit that inverts a logic level of an input signal given to an external input terminal and outputs the inverted logic level, a second inverter circuit that outputs a potential in which a logic level of an output signal of the first inverter circuit is inverted, that is, a potential higher or lower than a logic of an input signal applied to the first inverter circuit by the amount of a predetermined potential, and a feedback path that positive feedbacks an output signal of the second inverter circuit to the external input terminal. The interface circuit of the invention positive-feedbacks a potential of the output signal of the second inverter circuit and shifts the potential of the external input terminal in a floating state to an H or L level potential. | 06-09-2011 |
20110175644 | SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM INCLUDING THE SAME - A semiconductor device includes a first circuit block connected between first and second power lines, a logic circuit that receives an output signal of the first circuit block that is connected between the first power line and a fourth power line or a third power line and the second power line, and a second circuit block that receives an output signal of the logic circuit that is connected between the third and fourth power lines. In an active state, a first potential is supplied and in a standby state, a second potential lower than the first potential is supplied between the first and second power lines. In any of the active state and the standby state, the first potential is supplied between the third and fourth power lines. With this configuration, speeding-up of a critical path can be realized while maintaining a subthreshold current low. | 07-21-2011 |
20110316582 | Semiconductor integrated circuit including a power controllable region - A semiconductor chip includes a first power supply line and a second power supply line. A first switch is coupled between the first power supply line and the second power supply line, and a second switch is coupled between the first power supply line and the second power supply line. A circuit is coupled to the second power supply line. A first control signal line is coupled to the first switch, and a second control signal line coupled to the second switch. A logic gate is coupled to the first and the second control signal lines and a terminal is coupled to the logic gate to output a signal to an outside of the semiconductor chip. | 12-29-2011 |
20130069690 | POWER CONTROL CIRCUIT, SEMICONDUCTOR DEVICE INCLUDING THE SAME - A power control circuit is connected between a power supply voltage and a logic circuit to switch power supplied to the logic circuit. The power control circuit includes a plurality of first power gating cells (PGCs) receiving an external mode change signal in parallel, at least one second PGC connected with one first PGC, at least one third PGC connected with the at least one second PGC, and at least one fourth PGC connected with the at least one third PGC. The second power gating cell, the third PGC, and/or the fourth PGC may include a plurality of gating cells. At least one of the second, third, and fourth pluralities has power gating cells connected in series. Each of the first through fourth PGCs switches power supplied in response to the mode change signal. | 03-21-2013 |
20130082734 | LOGIC CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT - Provided is a logic circuit that can reduce the variation of a power supply voltage supplied thereto and a semiconductor integrated circuit including the logic circuit. The logic circuit includes a buffer unit, a voltage detection unit, and a switch unit. The buffer unit is connected between a first power supply or a voltage regulator and a second power supply to receive power supply, and outputs a signal having the same or inverted logic level as an input signal to an output terminal. The voltage detection unit detects a voltage at the output terminal and outputs a detection signal based on a detection result. The switch unit connects the buffer unit to the first power supply or the voltage regulator in accordance with the detection signal. | 04-04-2013 |
20130278287 | Low Leakage Boundary Scan Device Design and Implementation - A boundary scan circuit containing a freeze circuit and a transparency circuit that provides a capability to selectively place portions of a system logic in a sleep mode and thereby conserving power. There are two transparency circuit configurations, one that connects to an input pad cell and one that connects to an output pad cell. The circuitry in the transparency circuit is controlled in such a manner as to establish at the output of transparency circuit a known logic state to control leakage current resulting from the circuitry of the various pad cell configurations, which further conserves power during sleep mode. | 10-24-2013 |
20140097867 | SEMICONDUCTOR INTEGRATED CIRCUIT - To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved. | 04-10-2014 |
20140139262 | MULTIPLE THRESHOLD VOLTAGE STANDARD CELLS - An integrated circuit cell includes a set of circuit elements associated with a logic function along a logical path between an input and an output of the integrated circuit cell. The set of circuit elements includes a first subset of circuit elements having a first width size and a first threshold voltage and configured to operate within a cycle of time. The set of circuit elements also includes a second subset of circuit elements having a second width size and a second threshold voltage and configured to operate within the cycle of time. The first subset and second subset of circuit elements are configured to toggle data between the input and the output. The second threshold voltage is less than the first threshold voltage when the second width size is less than the first width size. | 05-22-2014 |
20140152342 | CMOS DIFFERENTIAL LOGIC CIRCUIT USING VOLTAGE BOOSTING TECHNIQUE - The present invention discloses a CMOS differential logic circuit. The CMOS differential logic circuit includes a precharge differential logic unit, which is precharged to a source voltage in response to a clock signal and is configured to output voltage having an increased load-driving ability using a boosting voltage; a voltage-boosting unit, which is pulled down by a ground voltage in response to the clock signal and is configured to boost the pulled-down voltage using capacitive coupling and output the boosting voltage; and a switching unit, which is configured to couple the precharge differential logic unit and the voltage-boosting unit in response to the clock signal. The propagation delay of a signal from the input terminal to the output terminal of a circuit in a low-source-voltage environment can be reduced, and the operating speed of the circuit and energy efficiency of the operation thereof can be improved. | 06-05-2014 |
20140167813 | DIGITAL CLAMP FOR STATE RETENTION - Described is an apparatus which comprises: a clamp coupled between a first power supply and a second power supply; and a circuit to operate with the second power supply, wherein the clamp is operable to adjust the second power supply when the apparatus enters a low power mode. | 06-19-2014 |
20140210510 | BYPASSABLE CLOCKED STORAGE CIRCUITRY FOR DYNAMIC VOLTAGE-FREQUENCY SCALING - Integrated circuits with sequential logic circuitry are provided. Sequential logic circuitry may include a chain of bypassable clocked storage elements coupled between a speed critical input terminal and a speed critical output terminal. Combinational logic circuits may be interposed between each adjacent pair of bypassable clocked storage elements in the chain. Dynamic voltage-frequency scaling (DVFS) control circuitry may provide an adjustable power supply voltage to the combinational logic circuits and may provide an adjustable clock signal to control the clocked storage elements. The DVFS control circuitry may be used to selectively enable at least some of the bypassable clocked storage elements while disabling other bypassable clocked storage elements so that the power supply voltage can be reduced while maintaining the same operating frequency. The power supply voltage and the frequency of the clock signal can be adjusted to provide the desired voltage-frequency tradeoff. | 07-31-2014 |
20140312928 | High-Speed Current Steering Logic Output Buffer - A current steering logic buffer for generating an output clock signal, comprises: a buffer for receiving an input clock signal; a current source; switches controlled by the buffer, wherein the switches connect the current source to outputs for generating the output clock signal; and a feedback loop for controlling the current source as a function of the outputs and a reference voltage. | 10-23-2014 |
20140347093 | SEMICONDUCTOR APPARATUS - An internal voltage generation circuit of a semiconductor apparatus includes: an active driver configured to output an internal voltage to an output node; a standby driver configured to output the internal voltage to the output node; and a voltage stabilizer connected to the output node. The voltage stabilizer starts a voltage stabilization operation of supplying or receiving electric charges to or from the output node when an active enable signal is disabled, and stops the voltage stabilization operation in a predetermined time after the active enable signal is enabled. | 11-27-2014 |
326034000 | With field effect-transistor | 16 |
20080218200 | Organic TFT inverter arrangement - An organic TFT (OTFT) inverter arrangement comprises an inverter stage including a series arrangement of first and second MOS OTFTs (T | 09-11-2008 |
20080218201 | CML DELAY CELL WITH LINEAR RAIL-TO-RAIL TUNING RANGE AND CONSTANT OUTPUT SWING - A current mode logic (CML) delay cell with linear rail-to-rail tuning range and constant output swing. The CML delay cell can include a tuning voltage input on a first and second transistor, contributing to a CML delay cell load, and a bias voltage input on a third transistor, as a current source I | 09-11-2008 |
20080309369 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 12-18-2008 |
20100097097 | SEMICONDUCTOR DEVICE USING POWER GATING - A semiconductor device using power gating includes a circuit unit and a current blocking unit. The circuit unit is connected between a first voltage node and a virtual voltage node. The current blocking unit is connected between the virtual voltage node and a second voltage node, and can block a leakage current of the circuit unit in a standby mode. Also, the current blocking unit controls whether or not to connect the virtual voltage node and the second voltage node in response to a plurality of random signals whose logic states are randomly transited when the standby mode is switched to an active mode. The semiconductor device can minimize ground bounce noise and can stably apply a voltage to a circuit storing data in a data retention mode. | 04-22-2010 |
20100109702 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 05-06-2010 |
20100127730 | Internal charge transfer for circuits - The present invention enables fast transition between sleep and normal modes for circuits such as digital circuits. This invention utilizes chip internal charge transfer operations to put the circuit into fast sleep. The invention reduces external power involvement, and it expedites the sleep mode transition time by limiting charge transfers within the circuit. The fast sleep and fast wake-up enable more efficient power management of the system. This functionality also maximizes performance per power, and provides a more energy efficient computing architecture. | 05-27-2010 |
20100148818 | HIGH SPEED CONDITIONAL BACK BIAS VIRTUAL GROUND RESTORATION CIRCUIT - A conditional level shifter circuit is used to substantially eliminate sneak current from occurring in an integrated circuit device having two or more logic circuit modules in different voltage domains. Sneak current is caused when a signal between the two or more logic circuit modules in different voltage domains is at logic “0” and one of the logic circuit modules is biased at a voltage level above the true ground, V | 06-17-2010 |
20100219857 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 09-02-2010 |
20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
20110163779 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 07-07-2011 |
20120068731 | CIRCUIT FOR RESTRAINING SHOOT THROUGH CURRENT - A circuit for restraining a shoot through current comprises a master selecting unit and a logic unit. The master selecting unit receives an input signal, and outputs first and second master selecting signals. The logic unit comprises first and second logic elements which generate first and second control signals for controlling two transistor switches connected in series. The first and second logic elements change the logic states of the first and second control signals according to the first and second master selecting signals. When the input signal is at a first logic level, the first logic element acquires a control privilege to change the logic state of the first control signal and trigger the second logic element to change the logic state of the second control signal. When the input signal is at a second logic, the second logic element acquires the control privilege. | 03-22-2012 |
20120161812 | LOGIC CIRCUIT WITHOUT ENHANCEMENT MODE TRANSISTORS - Embodiments of circuits, methods and systems for powering various stages of a logic circuit are disclosed. Other embodiments may also be described and claimed. | 06-28-2012 |
20140028346 | Low Supply Voltage Logic Circuit - A low supply voltage logic circuit includes a first current source operable to generate a first current dependent on a first control signal and to generate a first leakage current. A second current source is operable to generate a second current dependent on a second control signal and to generate a second leakage current. A third current source has a third current path between the output terminal and the first supply voltage terminal and is operable to generate a third current through the third current path to compensate for the second leakage current. A fourth current source has a fourth current path between the output terminal and the second supply voltage terminal and is operable to generate a fourth current through the fourth current path to compensate for the first leakage current. | 01-30-2014 |
20140091833 | Driver Circuit for a Digital Signal Transmitting Bus - A driver circuit for a digital signal transmitting bus includes a main switch. The main switch is connected to the bus, is controllable by the digital signal to be transmitted, and has one on-switching state in which it has maximum electrical conductivity, one off-switching state in which it has minimum electrical conductivity and at least one intermediate switching state with an electrical conductivity between the minimum and maximum conductivity. The digital signal has a first logic state and a second logic state, the first logic state controls the main switch to be in the on-switching state and the second logic state controls the main switch to be in the off-switching state. The main switch is in the intermediate switching state during switching from the on-switching state to the off-switching state and/or vice versa. | 04-03-2014 |
20140375355 | DIFFERENTIAL RECEIVER, ELECTRONIC DEVICE AND INDUSTRIAL DEVICE INCLUDING THE SAME, AND METHOD OF RECEIVING DIFFERENTIAL SIGNAL - A differential receiver for receiving differential signals including a positive signal and a negative signal and generating an output signal is provided. The differential receiver includes a first comparator configured to compare the positive signal and the negative signal and generate a first signal that is asserted when a difference between the positive signal and the negative signal is larger than a positive offset voltage; a second comparator configured to compare the positive signal and the negative signal and generate a second signal that is asserted when the difference between the positive signal and the negative signal is smaller than a negative offset voltage; a logic gate configured to generate a third signal that is asserted when the first signal and the second signal are negated; and an output circuit configured to generate the output signal based on the first to third signals. | 12-25-2014 |
20150091612 | NOISE ELIMINATION CIRCUIT OF SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a pulse generation unit configured to detect a transition of an input signal and generate a preliminary pulse signal, and an error elimination unit configured to determine error of the preliminary pulse signal and output a signal as a pulse signal. | 04-02-2015 |
20080218200 | Organic TFT inverter arrangement - An organic TFT (OTFT) inverter arrangement comprises an inverter stage including a series arrangement of first and second MOS OTFTs (T | 09-11-2008 |
20080218201 | CML DELAY CELL WITH LINEAR RAIL-TO-RAIL TUNING RANGE AND CONSTANT OUTPUT SWING - A current mode logic (CML) delay cell with linear rail-to-rail tuning range and constant output swing. The CML delay cell can include a tuning voltage input on a first and second transistor, contributing to a CML delay cell load, and a bias voltage input on a third transistor, as a current source I | 09-11-2008 |
20080309369 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 12-18-2008 |
20100097097 | SEMICONDUCTOR DEVICE USING POWER GATING - A semiconductor device using power gating includes a circuit unit and a current blocking unit. The circuit unit is connected between a first voltage node and a virtual voltage node. The current blocking unit is connected between the virtual voltage node and a second voltage node, and can block a leakage current of the circuit unit in a standby mode. Also, the current blocking unit controls whether or not to connect the virtual voltage node and the second voltage node in response to a plurality of random signals whose logic states are randomly transited when the standby mode is switched to an active mode. The semiconductor device can minimize ground bounce noise and can stably apply a voltage to a circuit storing data in a data retention mode. | 04-22-2010 |
20100109702 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 05-06-2010 |
20100127730 | Internal charge transfer for circuits - The present invention enables fast transition between sleep and normal modes for circuits such as digital circuits. This invention utilizes chip internal charge transfer operations to put the circuit into fast sleep. The invention reduces external power involvement, and it expedites the sleep mode transition time by limiting charge transfers within the circuit. The fast sleep and fast wake-up enable more efficient power management of the system. This functionality also maximizes performance per power, and provides a more energy efficient computing architecture. | 05-27-2010 |
20100148818 | HIGH SPEED CONDITIONAL BACK BIAS VIRTUAL GROUND RESTORATION CIRCUIT - A conditional level shifter circuit is used to substantially eliminate sneak current from occurring in an integrated circuit device having two or more logic circuit modules in different voltage domains. Sneak current is caused when a signal between the two or more logic circuit modules in different voltage domains is at logic “0” and one of the logic circuit modules is biased at a voltage level above the true ground, V | 06-17-2010 |
20100219857 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 09-02-2010 |
20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
20110163779 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 07-07-2011 |
20120068731 | CIRCUIT FOR RESTRAINING SHOOT THROUGH CURRENT - A circuit for restraining a shoot through current comprises a master selecting unit and a logic unit. The master selecting unit receives an input signal, and outputs first and second master selecting signals. The logic unit comprises first and second logic elements which generate first and second control signals for controlling two transistor switches connected in series. The first and second logic elements change the logic states of the first and second control signals according to the first and second master selecting signals. When the input signal is at a first logic level, the first logic element acquires a control privilege to change the logic state of the first control signal and trigger the second logic element to change the logic state of the second control signal. When the input signal is at a second logic, the second logic element acquires the control privilege. | 03-22-2012 |
20120161812 | LOGIC CIRCUIT WITHOUT ENHANCEMENT MODE TRANSISTORS - Embodiments of circuits, methods and systems for powering various stages of a logic circuit are disclosed. Other embodiments may also be described and claimed. | 06-28-2012 |
20140028346 | Low Supply Voltage Logic Circuit - A low supply voltage logic circuit includes a first current source operable to generate a first current dependent on a first control signal and to generate a first leakage current. A second current source is operable to generate a second current dependent on a second control signal and to generate a second leakage current. A third current source has a third current path between the output terminal and the first supply voltage terminal and is operable to generate a third current through the third current path to compensate for the second leakage current. A fourth current source has a fourth current path between the output terminal and the second supply voltage terminal and is operable to generate a fourth current through the fourth current path to compensate for the first leakage current. | 01-30-2014 |
20140091833 | Driver Circuit for a Digital Signal Transmitting Bus - A driver circuit for a digital signal transmitting bus includes a main switch. The main switch is connected to the bus, is controllable by the digital signal to be transmitted, and has one on-switching state in which it has maximum electrical conductivity, one off-switching state in which it has minimum electrical conductivity and at least one intermediate switching state with an electrical conductivity between the minimum and maximum conductivity. The digital signal has a first logic state and a second logic state, the first logic state controls the main switch to be in the on-switching state and the second logic state controls the main switch to be in the off-switching state. The main switch is in the intermediate switching state during switching from the on-switching state to the off-switching state and/or vice versa. | 04-03-2014 |
20140375355 | DIFFERENTIAL RECEIVER, ELECTRONIC DEVICE AND INDUSTRIAL DEVICE INCLUDING THE SAME, AND METHOD OF RECEIVING DIFFERENTIAL SIGNAL - A differential receiver for receiving differential signals including a positive signal and a negative signal and generating an output signal is provided. The differential receiver includes a first comparator configured to compare the positive signal and the negative signal and generate a first signal that is asserted when a difference between the positive signal and the negative signal is larger than a positive offset voltage; a second comparator configured to compare the positive signal and the negative signal and generate a second signal that is asserted when the difference between the positive signal and the negative signal is smaller than a negative offset voltage; a logic gate configured to generate a third signal that is asserted when the first signal and the second signal are negated; and an output circuit configured to generate the output signal based on the first to third signals. | 12-25-2014 |
20150091612 | NOISE ELIMINATION CIRCUIT OF SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a pulse generation unit configured to detect a transition of an input signal and generate a preliminary pulse signal, and an error elimination unit configured to determine error of the preliminary pulse signal and output a signal as a pulse signal. | 04-02-2015 |
326034000 | With field-effect transistor | 16 |
20080218200 | Organic TFT inverter arrangement - An organic TFT (OTFT) inverter arrangement comprises an inverter stage including a series arrangement of first and second MOS OTFTs (T | 09-11-2008 |
20080218201 | CML DELAY CELL WITH LINEAR RAIL-TO-RAIL TUNING RANGE AND CONSTANT OUTPUT SWING - A current mode logic (CML) delay cell with linear rail-to-rail tuning range and constant output swing. The CML delay cell can include a tuning voltage input on a first and second transistor, contributing to a CML delay cell load, and a bias voltage input on a third transistor, as a current source I | 09-11-2008 |
20080309369 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 12-18-2008 |
20100097097 | SEMICONDUCTOR DEVICE USING POWER GATING - A semiconductor device using power gating includes a circuit unit and a current blocking unit. The circuit unit is connected between a first voltage node and a virtual voltage node. The current blocking unit is connected between the virtual voltage node and a second voltage node, and can block a leakage current of the circuit unit in a standby mode. Also, the current blocking unit controls whether or not to connect the virtual voltage node and the second voltage node in response to a plurality of random signals whose logic states are randomly transited when the standby mode is switched to an active mode. The semiconductor device can minimize ground bounce noise and can stably apply a voltage to a circuit storing data in a data retention mode. | 04-22-2010 |
20100109702 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 05-06-2010 |
20100127730 | Internal charge transfer for circuits - The present invention enables fast transition between sleep and normal modes for circuits such as digital circuits. This invention utilizes chip internal charge transfer operations to put the circuit into fast sleep. The invention reduces external power involvement, and it expedites the sleep mode transition time by limiting charge transfers within the circuit. The fast sleep and fast wake-up enable more efficient power management of the system. This functionality also maximizes performance per power, and provides a more energy efficient computing architecture. | 05-27-2010 |
20100148818 | HIGH SPEED CONDITIONAL BACK BIAS VIRTUAL GROUND RESTORATION CIRCUIT - A conditional level shifter circuit is used to substantially eliminate sneak current from occurring in an integrated circuit device having two or more logic circuit modules in different voltage domains. Sneak current is caused when a signal between the two or more logic circuit modules in different voltage domains is at logic “0” and one of the logic circuit modules is biased at a voltage level above the true ground, V | 06-17-2010 |
20100219857 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 09-02-2010 |
20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
20110163779 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 07-07-2011 |
20120068731 | CIRCUIT FOR RESTRAINING SHOOT THROUGH CURRENT - A circuit for restraining a shoot through current comprises a master selecting unit and a logic unit. The master selecting unit receives an input signal, and outputs first and second master selecting signals. The logic unit comprises first and second logic elements which generate first and second control signals for controlling two transistor switches connected in series. The first and second logic elements change the logic states of the first and second control signals according to the first and second master selecting signals. When the input signal is at a first logic level, the first logic element acquires a control privilege to change the logic state of the first control signal and trigger the second logic element to change the logic state of the second control signal. When the input signal is at a second logic, the second logic element acquires the control privilege. | 03-22-2012 |
20120161812 | LOGIC CIRCUIT WITHOUT ENHANCEMENT MODE TRANSISTORS - Embodiments of circuits, methods and systems for powering various stages of a logic circuit are disclosed. Other embodiments may also be described and claimed. | 06-28-2012 |
20140028346 | Low Supply Voltage Logic Circuit - A low supply voltage logic circuit includes a first current source operable to generate a first current dependent on a first control signal and to generate a first leakage current. A second current source is operable to generate a second current dependent on a second control signal and to generate a second leakage current. A third current source has a third current path between the output terminal and the first supply voltage terminal and is operable to generate a third current through the third current path to compensate for the second leakage current. A fourth current source has a fourth current path between the output terminal and the second supply voltage terminal and is operable to generate a fourth current through the fourth current path to compensate for the first leakage current. | 01-30-2014 |
20140091833 | Driver Circuit for a Digital Signal Transmitting Bus - A driver circuit for a digital signal transmitting bus includes a main switch. The main switch is connected to the bus, is controllable by the digital signal to be transmitted, and has one on-switching state in which it has maximum electrical conductivity, one off-switching state in which it has minimum electrical conductivity and at least one intermediate switching state with an electrical conductivity between the minimum and maximum conductivity. The digital signal has a first logic state and a second logic state, the first logic state controls the main switch to be in the on-switching state and the second logic state controls the main switch to be in the off-switching state. The main switch is in the intermediate switching state during switching from the on-switching state to the off-switching state and/or vice versa. | 04-03-2014 |
20140375355 | DIFFERENTIAL RECEIVER, ELECTRONIC DEVICE AND INDUSTRIAL DEVICE INCLUDING THE SAME, AND METHOD OF RECEIVING DIFFERENTIAL SIGNAL - A differential receiver for receiving differential signals including a positive signal and a negative signal and generating an output signal is provided. The differential receiver includes a first comparator configured to compare the positive signal and the negative signal and generate a first signal that is asserted when a difference between the positive signal and the negative signal is larger than a positive offset voltage; a second comparator configured to compare the positive signal and the negative signal and generate a second signal that is asserted when the difference between the positive signal and the negative signal is smaller than a negative offset voltage; a logic gate configured to generate a third signal that is asserted when the first signal and the second signal are negated; and an output circuit configured to generate the output signal based on the first to third signals. | 12-25-2014 |
20150091612 | NOISE ELIMINATION CIRCUIT OF SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a pulse generation unit configured to detect a transition of an input signal and generate a preliminary pulse signal, and an error elimination unit configured to determine error of the preliminary pulse signal and output a signal as a pulse signal. | 04-02-2015 |
20080218200 | Organic TFT inverter arrangement - An organic TFT (OTFT) inverter arrangement comprises an inverter stage including a series arrangement of first and second MOS OTFTs (T | 09-11-2008 |
20080218201 | CML DELAY CELL WITH LINEAR RAIL-TO-RAIL TUNING RANGE AND CONSTANT OUTPUT SWING - A current mode logic (CML) delay cell with linear rail-to-rail tuning range and constant output swing. The CML delay cell can include a tuning voltage input on a first and second transistor, contributing to a CML delay cell load, and a bias voltage input on a third transistor, as a current source I | 09-11-2008 |
20080309369 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 12-18-2008 |
20100097097 | SEMICONDUCTOR DEVICE USING POWER GATING - A semiconductor device using power gating includes a circuit unit and a current blocking unit. The circuit unit is connected between a first voltage node and a virtual voltage node. The current blocking unit is connected between the virtual voltage node and a second voltage node, and can block a leakage current of the circuit unit in a standby mode. Also, the current blocking unit controls whether or not to connect the virtual voltage node and the second voltage node in response to a plurality of random signals whose logic states are randomly transited when the standby mode is switched to an active mode. The semiconductor device can minimize ground bounce noise and can stably apply a voltage to a circuit storing data in a data retention mode. | 04-22-2010 |
20100109702 | SEMICONDUCTOR INTEGRATED CIRCUITS WITH POWER REDUCTION MECHANISM - A semiconductor device including first and second power lines, and first and second circuit blocks coupled between the power lines. A first switching element is inserted between the first circuit block and at least one of the power lines and a second switching element is inserted between the second circuit block and at least one of the power lines. The first switching element is rendered conductive to allow the first circuit block to receive the power voltage through the first and second power lines while the second switching element is rendered nonconductive to prevent the second circuit block from receiving the power voltage through the first and second power lines, so that a leakage current flowing through the second circuit is suppressed. | 05-06-2010 |
20100127730 | Internal charge transfer for circuits - The present invention enables fast transition between sleep and normal modes for circuits such as digital circuits. This invention utilizes chip internal charge transfer operations to put the circuit into fast sleep. The invention reduces external power involvement, and it expedites the sleep mode transition time by limiting charge transfers within the circuit. The fast sleep and fast wake-up enable more efficient power management of the system. This functionality also maximizes performance per power, and provides a more energy efficient computing architecture. | 05-27-2010 |
20100148818 | HIGH SPEED CONDITIONAL BACK BIAS VIRTUAL GROUND RESTORATION CIRCUIT - A conditional level shifter circuit is used to substantially eliminate sneak current from occurring in an integrated circuit device having two or more logic circuit modules in different voltage domains. Sneak current is caused when a signal between the two or more logic circuit modules in different voltage domains is at logic “0” and one of the logic circuit modules is biased at a voltage level above the true ground, V | 06-17-2010 |
20100219857 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 09-02-2010 |
20100253387 | SYSTEM AND METHOD FOR AUTO-POWER GATING SYNTHESIS FOR ACTIVE LEAKAGE REDUCTION - A method includes parsing a design of the integrated circuit to define cells in automatic power gating power domains, automatically creating an automatic power gating power domain netlist from the parsed design of the integrated circuit, and placing and routing the automatic power gating power domain netlist to produce a layout for the integrated circuit. The parsing partitions a high-level power domain of the integrated circuit into one or more automatic power gating power domains. The automatic power gating power domains have substantially zero-cycle power up times, thereby enabling transparent operation. Furthermore, the automatic power gating power domains may be automatically inserted into designs of integrated circuits, thereby relieving integrated circuit designers of the task of inserting power domains and associated hardware and software. | 10-07-2010 |
20110163779 | LOW POWER CONSUMPTION MIS SEMICONDUCTOR DEVICE - A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized. | 07-07-2011 |
20120068731 | CIRCUIT FOR RESTRAINING SHOOT THROUGH CURRENT - A circuit for restraining a shoot through current comprises a master selecting unit and a logic unit. The master selecting unit receives an input signal, and outputs first and second master selecting signals. The logic unit comprises first and second logic elements which generate first and second control signals for controlling two transistor switches connected in series. The first and second logic elements change the logic states of the first and second control signals according to the first and second master selecting signals. When the input signal is at a first logic level, the first logic element acquires a control privilege to change the logic state of the first control signal and trigger the second logic element to change the logic state of the second control signal. When the input signal is at a second logic, the second logic element acquires the control privilege. | 03-22-2012 |
20120161812 | LOGIC CIRCUIT WITHOUT ENHANCEMENT MODE TRANSISTORS - Embodiments of circuits, methods and systems for powering various stages of a logic circuit are disclosed. Other embodiments may also be described and claimed. | 06-28-2012 |
20140028346 | Low Supply Voltage Logic Circuit - A low supply voltage logic circuit includes a first current source operable to generate a first current dependent on a first control signal and to generate a first leakage current. A second current source is operable to generate a second current dependent on a second control signal and to generate a second leakage current. A third current source has a third current path between the output terminal and the first supply voltage terminal and is operable to generate a third current through the third current path to compensate for the second leakage current. A fourth current source has a fourth current path between the output terminal and the second supply voltage terminal and is operable to generate a fourth current through the fourth current path to compensate for the first leakage current. | 01-30-2014 |
20140091833 | Driver Circuit for a Digital Signal Transmitting Bus - A driver circuit for a digital signal transmitting bus includes a main switch. The main switch is connected to the bus, is controllable by the digital signal to be transmitted, and has one on-switching state in which it has maximum electrical conductivity, one off-switching state in which it has minimum electrical conductivity and at least one intermediate switching state with an electrical conductivity between the minimum and maximum conductivity. The digital signal has a first logic state and a second logic state, the first logic state controls the main switch to be in the on-switching state and the second logic state controls the main switch to be in the off-switching state. The main switch is in the intermediate switching state during switching from the on-switching state to the off-switching state and/or vice versa. | 04-03-2014 |
20140375355 | DIFFERENTIAL RECEIVER, ELECTRONIC DEVICE AND INDUSTRIAL DEVICE INCLUDING THE SAME, AND METHOD OF RECEIVING DIFFERENTIAL SIGNAL - A differential receiver for receiving differential signals including a positive signal and a negative signal and generating an output signal is provided. The differential receiver includes a first comparator configured to compare the positive signal and the negative signal and generate a first signal that is asserted when a difference between the positive signal and the negative signal is larger than a positive offset voltage; a second comparator configured to compare the positive signal and the negative signal and generate a second signal that is asserted when the difference between the positive signal and the negative signal is smaller than a negative offset voltage; a logic gate configured to generate a third signal that is asserted when the first signal and the second signal are negated; and an output circuit configured to generate the output signal based on the first to third signals. | 12-25-2014 |
20150091612 | NOISE ELIMINATION CIRCUIT OF SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a pulse generation unit configured to detect a transition of an input signal and generate a preliminary pulse signal, and an error elimination unit configured to determine error of the preliminary pulse signal and output a signal as a pulse signal. | 04-02-2015 |