Class / Patent application number | Description | Number of patent applications / Date published |
310357000 | Orientation of piezoelectric polarization | 76 |
20080203855 | Broadband, Nonreciprocal Network Element - A magneto-electric (ME) gyrator, which is a discrete, passive network element, comprises a laminated composite of piezoelectric and magnetostrictive layers. The ME gyrator approximately meets the following criteria: Vy=−α/,, where V is voltage, /is current, and a is a conversion (or gyration) coefficient between voltage and current and non-reciprocity is manifested as a 180° phase shift between open and short circuit (/,F) conditions, and =* 1 (Ib) where c0 is the speed of light in vacuum, εêis the effective relative dielectric constant, and μĉis the effectβive relative permeability. | 08-28-2008 |
20090179525 | PIEZOELECTRIC CRYSTAL ELEMENTS OF SHEAR MODE AND PROCESS FOR THE PREPARATION THEREOF - Piezoelectric crystal elements are provided having preferred cut directions that optimize the shear mode piezoelectric properties. In the discovered cut directions, the crystal elements have super-high piezoelectric performance with d | 07-16-2009 |
20090184605 | CNT-BASED ACTUATOR, LENS MODULE USING SAME AND CAMERA MODULE USING SAME - An exemplary CNT-based actuator includes a first electrode, a second electrode opposite to the first electrode, and a CNT layer sandwiched between the first electrode and the second electrode. The CNT layer includes two opposite surfaces in contact with the first and the second electrodes respectively, and a plurality of CNTs substantially parallel to each other. The first electrode and the second electrode are configured for cooperatively creating therebetween an electric field with an electric field direction substantially parallel to the CNTs so as to adjust a thickness of the CNT layer, thereby moving the second electrode relative to the first electrode. | 07-23-2009 |
20090206704 | VIBRATORY STRUCTURE, VIBRATOR, AND OSCILLATOR - A vibratory structure includes: a first X-cut crystal substrate; a second X-cut crystal substrate stacked on the first X-cut crystal substrate so that the x-axis of the second X-cut crystal substrate is parallel to the x-axis of the first X-cut crystal substrate; a base formed by the first X-cut crystal substrate and the second X-cut crystal substrate; and vibratory arm sections formed so as to be integrated together with the base in one body, and protruding from the base. | 08-20-2009 |
20090243437 | MULTILAYERED ACTUATORS HAVING INTERDIGITAL ELECTRODES - The invention relates to a method for producing a monolithic multilayered actuator comprising a stack of thin active piezoceramic films with applied metallic inner electrodes which reciprocally lead from the stack and are electrically connected in parallel using outer electrodes. | 10-01-2009 |
20100045144 | PIEZOELECTRIC DEVICE, ANGULAR VELOCITY SENSOR, ELECTRONIC APPARATUS, AND PRODUCTION METHOD OF A PIEZOELECTRIC DEVICE - A piezoelectric device is provided and includes a substrate, a first electrode film, a piezoelectric film, and a second electrode film. The first electrode film is formed on the substrate. The piezoelectric film is represented by Pb | 02-25-2010 |
20100141097 | THIN FILM PIEZOELECTRIC ACTUATORS - A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material. | 06-10-2010 |
20100231095 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC DEVICE, AND METHOD OF PRODUCING THE PIEZOELECTRIC DEVICE - Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): | 09-16-2010 |
20100320874 | PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To provide A piezoelectric thin film element, comprising a piezoelectric thin film lamination with at least a lower electrode, a piezoelectric thin film represented by a general formula (Na | 12-23-2010 |
20100320875 | FLEXURAL VIBRATION PIECE, FLEXURAL VIBRATOR, AND ELECTRONIC APPARATUS - A flexural vibration piece includes: a base portion; a vibrating arm extending from the base portion and having a first surface, a second surface opposing the first surface, and side surfaces connecting the first surface and second surface, wherein a laminated structure including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and second electrode, is formed on each of the first surface and second surface, the piezoelectric layer formed on the first surface side and the piezoelectric layer formed on the second surface side have mutually opposite polarization directions, and the first electrode formed on the first surface side and the first electrode formed on the second surface side are connected to each other. | 12-23-2010 |
20110006643 | PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC THIN FILM DEVICE - To stably provide a KNN piezoelectric thin film element having piezoelectric characteristics replaceable with a PZT thin film. A piezoelectric thin film element includes: a piezoelectric thin film on a substrate, having an alkali niobium oxide series perovskite structure expressed by a general formula (K | 01-13-2011 |
20110121689 | POLARITY DETERMINING SEED LAYER AND METHOD OF FABRICATING PIEZOELECTRIC MATERIALS WITH SPECIFIC C-AXIS - An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first electrode and the second electrode, and comprising a C-axis having an orientation. A polarization-determining seed layer (PDSL) is disposed beneath the piezoelectric layer, the seed layer comprising a metal-nonmetal compound. A method of fabricating a piezoelectric layer over a substrate comprises forming a first layer of a polarization determining seed layer (PDSL) over the substrate. The method further comprises forming a second layer of the PDSL over the first layer. The method further comprises forming a first layer of a piezoelectric material over the second layer of the PDSL; and forming a second layer of the piezoelectric material over the first layer of the piezoelectric material. The piezoelectric material comprises a compression axis (C-axis) oriented along a first direction. | 05-26-2011 |
20110181154 | Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator - A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts. | 07-28-2011 |
20120062073 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND ACTUATOR DEVICE - A liquid ejecting head including a pressure-generating chamber which communicates with a nozzle opening, and a piezoelectric element including a first electrode, a piezoelectric layer formed above the first electrode and having a perovskite structure represented by the general formula ABO | 03-15-2012 |
20120126668 | PIEZOELECTRIC RESONATOR ELEMENT AND PIEZOELECTRIC RESONATOR - A piezoelectric resonator element includes a piezoelectric substrate formed of an AT-cut quartz crystal substrate in which the thickness direction thereof is a direction parallel to the Y′ axis; and excitation electrodes disposed so as to face vibrating regions on both front and rear principal surfaces of the piezoelectric substrate. The piezoelectric substrate includes a rectangular excitation portion in which sides parallel to the X axis are long sides thereof, and sides parallel to the Z′ axis are short sides thereof; and a peripheral portion having a smaller thickness than the excitation portion and formed around the excitation portion. Each of side surfaces of the excitation portion extending in a direction parallel to the X axis is present in one plane, and each of side surfaces of the excitation portion extending in a direction parallel to the Z′ axis has a step. | 05-24-2012 |
20120319533 | PIEZOELECTRIC THIN FILM, PIEZOELECTRIC ELEMENT, AND MANUFACTURING METHOD THEREOF - Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15≦c/a≦1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film. | 12-20-2012 |
20130093290 | Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing - A ferroelectric device comprising a substrate;
| 04-18-2013 |
20130147321 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND ACTUATOR DEVICE - A liquid ejecting head including a pressure-generating chamber which communicates with a nozzle opening, and a piezoelectric element including a first electrode, a piezoelectric layer formed above the first electrode and having a perovskite structure represented by the general formula ABO | 06-13-2013 |
20130257228 | PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME - A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (100) plane preferentially in a range of 45 nm to 150 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer. | 10-03-2013 |
20140132117 | METHOD OF FABRICATING RARE-EARTH DOPED PIEZOELECTRIC MATERIAL WITH VARIOUS AMOUNTS OF DOPANTS AND A SELECTED C-AXIS ORIENTATION - A method of fabricating a rare-earth element doped piezoelectric material having a first component, a second component and the rare-earth element. The method includes: providing a substrate; initially flowing hydrogen over the substrate; after the initially flowing of the hydrogen over the substrate, flowing the first component to form the rare-earth element doped piezoelectric material over a surface of a target, the target comprising the rare-earth metal in a certain atomic percentage; and sputtering the rare-earth element doped piezoelectric material from the target on the substrate. | 05-15-2014 |
20140191618 | POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE - A plasma poling device includes a holding electrode ( | 07-10-2014 |
20140265734 | Stylo-Epitaxial Piezoelectric and Ferroelectric Devices and Method of Manufacturing - A ferroelectric device comprising a substrate; | 09-18-2014 |
20140339960 | PIEZOELECTRIC BULK - WAVE RESONATOR - A piezoelectric bulk-wave resonator has a single-crystal LiNbO | 11-20-2014 |
20150076966 | PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A piezoelectric device and a method of manufacturing a piezoelectric device are provided. The piezoelectric device includes first and second electrodes disposed on a first surface of a piezoelectric layer; third and fourth electrodes disposed on a second surface of the piezoelectric layer, a first conductor electrically connecting the first and fourth electrodes, and a second conductor electrically connecting the second and third electrodes, in a cross-link with the first conductor. | 03-19-2015 |
20160056366 | MULTILAYER CERAMIC STRUCTURE, MANUFACTURING METHOD THEREFOR AND PIEZOELECTRIC ACTUATOR - A multilayer ceramic structure, which is to be divided into a large number of piezoelectric actuators, includes a rectangular-parallelepiped-shaped multilayer ceramic body. An upper surface opposing electrode is formed on an upper surface, a lower surface opposing electrode is formed on a lower surface and inner opposing electrodes are formed inside the multilayer ceramic body. A silt is provided in the upper surface opposing electrode. Opposing portions are provided where the upper surface opposing electrode, the inner opposing electrodes and the lower surface opposing electrode are superposed with each other when viewed in plan. The slit is provided in the upper surface opposing electrode in a portion of a region between the opposing portion and the first side surface and so as to extend in a first direction linking a first end surface and a second end surface. | 02-25-2016 |
20160133825 | PIEZOELECTRIC LAYER, PIEZOELECTRIC COMPONENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD-DISK DRIVE AND INK JET PRINTER - A piezoelectric layer made of potassium sodium niobate which is a perovskite type compound represented by the formula ABO | 05-12-2016 |
20190148619 | PIEZOELECTRIC TRANSFORMER | 05-16-2019 |
310358000 | Ceramic composition (e.g., barium titanate) | 49 |
20080203856 | PIEZOELECTRIC ELEMENT, LIQUID EJECTION HEAD AND PRINTER - A piezoelectric element includes a base substrate; a lower electrode formed above the base substrate; a piezoelectric layer that is formed above the lower electrode, and formed from a perovskite type oxide expressed by a general formula ABO | 08-28-2008 |
20080218032 | LAMINATED PIEZOELECTRIC ELEMENT INCLUDING ADHESIVE LAYERS HAVING SMALL THICKNESS AND HIGH ADHESIVE STRENGTH - A laminated piezoelectric element according to the present invention includes a plurality of unit laminates and a plurality of adhesive layers. The unit laminates are stacked together. Each of the unit laminates includes a plurality of piezoelectric ceramic layers and a plurality of internal electrode layers that are alternately laminated with the piezoelectric ceramic layers in the lamination direction of the unit laminate. Each of the adhesive layers is formed between adjacent two of the unit laminates to bond the two unit laminates together. Further, each of the adhesive layers has a thickness of 1 μm or less and an adhesive strength of 1.3 MPa or higher. | 09-11-2008 |
20080224571 | PIEZOELECTRIC ELEMENT, LIQUID JET HEAD AND PRINTER - A piezoelectric element includes: a base substrate; a lower electrode formed above the base substrate; a piezoelectric layer that is formed above the lower electrode, and formed from a perovskite type oxide; and an upper electrode formed above the piezoelectric layer, wherein the piezoelectric layer is oriented to (100) crystal orientation in the pseudo-cubic crystal expression, and a crystal of the perovskite type oxide in a direction parallel to a lower surface of the piezoelectric layer has a lattice constant greater than a lattice constant of the crystal of the perovskite type oxide in a direction orthogonal to the lower surface of the piezoelectric layer. | 09-18-2008 |
20080231146 | PIEZOELECTRIC ELEMENT, INK JET RECORDING HEAD AND INK JET PRINTER - A piezoelectric element includes: a base substrate; a lower electrode formed above the base substrate; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein an angle of a corner defined by a side surface of the ferroelectric layer and a top surface of the base substrate is between 45° and 75°. | 09-25-2008 |
20080265718 | PIEZOELECTRIC BODY, PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): | 10-30-2008 |
20080278038 | PIEZOELECTRIC DEVICE, PROCESS FOR PRODUCING THE PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE - A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the [010] axis makes an angle θm satisfying the condition that −45 degrees<θm<+45 degrees and θm≠0 degrees. Further, the spontaneous-polarization axis or the [010] axis may be perpendicular to the thickness direction of the piezoelectric film. | 11-13-2008 |
20080290759 | PIEZOELECTRIC VIBRATOR - An energy-trapping strip piezoelectric vibrator utilizing a third harmonic overtone of a thickness shear mode is provided. A piezoelectric vibrator | 11-27-2008 |
20080309203 | Piezoelectric Element - A piezoelectric element includes an electrode disposed on at least one of the front and back surfaces of a piezoelectric material prepared by molding a mixture containing a Pb component, a Zr component, a Ti component, a Sr component, a Nb component, and a Zn component and then firing the molded product. When the piezoelectric material is represented by the general formula Pb(ZraTi | 12-18-2008 |
20090026891 | Stator and piezo ultrasonic motor including the same - A stator and a piezo ultrasonic motor including the same are provided. The piezo ultrasonic motor includes a stator including an elastic body having a flat portion at its outer surface and a central hole penetrating the center of the stator with a predetermined size, and a piezoelectric body including a first internal piezoelectric body and a second internal piezoelectric body integrally disposed parallel to each other in a longitudinal direction of the flat portion and providing an external force deforming the elastic body when an AC voltage is applied, a rotor inserted in the central hole and including a contact frictionally contacting an inner surface of the central hole, an elastic part providing an elastic force maintaining close attachment of the contact to the stator. Accordingly, the manufacturing cost decreases by reducing the number of elements and simplifying a structure, and a stable driving characteristic can be achieved. | 01-29-2009 |
20090033179 | MULTILAYER PIEZOELECTRIC ELEMENT - A multilayer piezoelectric element | 02-05-2009 |
20090072673 | PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE USING THE PIEZOELECTRIC DEVICE - A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Ti | 03-19-2009 |
20090091214 | PIEZOELECTRIC/ELECTROSTRICTIVE CERAMIC COMPOSITION AND PIEZOELECTRIC/ELECTROSTRICTIVE DEVICE - The invention provides a (Li, Na, K)(Nb, Ta, Sb)O | 04-09-2009 |
20090102324 | PIEZOELECTRIC CERAMIC COMPOSITION AND OSCILLATOR - Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Q | 04-23-2009 |
20090102325 | PIEZOELECTRIC/ELECTROSTRICTIVE CERAMIC COMPOSITION AND PIEZOELECTRIC/ELECTROSTRICTIVE DEVICE - The invention provides a (Li, Na, K)(Nb, Ta)O | 04-23-2009 |
20090121588 | PIEZOELECTRIC/ELECTROSTRICTIVE BODY, AND PIEZOELECTRIC/ELECTROSTRICTIVE ELEMENT - The piezoelectric/electrostrictive body is represented by a composition formula ABO | 05-14-2009 |
20090121589 | (Li, Na, K)(Nb, Ta)O3 BASED PIEZOELECTRIC MATERIAL AND MANUFACTURING METHOD THEREOF - Manufacturing sintered bodies having microstructures including microscopic grains having a grain diameter of less than 5 μm, intermediate grains having a grain diameter of 5 μm or more and less than 15 μm, and coarse grains having a grain diameter of 15 μm or more and 100 μm or less enables to obtain high electric characteristics. Chemical compounds including metal elements are mixed so that the ratio of the elements is a composition expressed by (Li, Na, K)(Nb, Ta)O | 05-14-2009 |
20090127981 | PIEZOELECTRIC DEVICE, ANGULAR VELOCITY SENSOR, AND METHOD OF MANUFACTURING A PIEZOELECTRIC DEVICE - A piezoelectric device includes a piezoelectric film and an electrode film. The piezoelectric film is constituted of lead zirconium titanate represented by Pb | 05-21-2009 |
20090152996 | Piezoelectric/electrostrictive membrane element - Disclosed is a piezoelectric/electrostrictive membrane element having a large flexural displacement with suppressed disadvantages such as the generation of a micro crack and a lattice defect due to a concentrated stress. The element includes a substrate of a ceramic material, a membranous piezoelectric/electrostrictive portion including a piezoelectric/electrostrictive body constituted of a large number of crystal particles | 06-18-2009 |
20090189489 | PIEZOELECTRIC/ELECTROSTRICTIVE FILM ELEMENT AND METHOD MANUFACTURING THE SAME - An actuator includes a fired ceramic substrate having a space opened downward, a first electrode formed on the upper surface of the fired ceramic substrate above the space, a piezoelectric/electrostrictive body formed on the first electrode so that the volume changes with input and output of electric power, and a second electrode formed on the piezoelectric/electrostrictive body. The piezoelectric/electrostrictive body is composed of Pb(Zr | 07-30-2009 |
20090200898 | Piezoelectric Ceramic and Piezoelectric Element - A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pb | 08-13-2009 |
20090230821 | Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element - A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure. | 09-17-2009 |
20090236943 | PIEZOELECTRIC CERAMIC AND PIEZOELECTRIC ELEMENT EMPLOYING IT - The piezoelectric element | 09-24-2009 |
20090236944 | Piezoelectric thin film element, and an actuator and a sensor fabricated by using the same - A piezoelectric thin film element includes a substrate, a lower electrode, a piezoelectric thin film, and an upper electrode. The lower electrode, the piezoelectric thin film and the upper electrode are formed on the substrate. The piezoelectric thin film includes a polycrystal thin film including crystal grains, an alkali niobium oxide based perovskite structure represented by a general formula: (K | 09-24-2009 |
20090236945 | MONOLITHIC PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A monolithic piezoelectric element includes an element assembly in which internal electrode layers and piezoelectric ceramic layers are laminated alternately. The internal electrode layers contain an Ag—Pd alloy, which has an Ag content of 85 percent by weight or more as a primary component, a metal element having a valence of at least one of pentavalence or hexavalence. The piezoelectric ceramic layers contain a composite oxide represented by Pb(Ti,Zr)O | 09-24-2009 |
20090243438 | PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - A piezoelectric element includes a first electrode, a piezoelectric film disposed on the first electrode, and a second electrode disposed on the piezoelectric film. The piezoelectric film is composed of piezoelectric material that is lead free and formed by mixing 100(1−x)% of material A having a spontaneous polarization of 0.5 C/m2 or greater at 25° C. and 100 x % of material B having piezoelectric characteristics and a dielectric constant of 1000 or greater at 25° C., wherein (1−x)Tc(A)+xTc(B)≧300° C., where Tc(A) is the Curie temperature of the material A and Tc(B) is the Curie temperature of the material B. | 10-01-2009 |
20090243439 | PIEZOELECTRIC CERAMIC AND PIEZOELECTRIC ELEMENT EMPLOYING IT - A piezoelectric ceramic | 10-01-2009 |
20090243440 | PIEZOELECTRIC CERAMIC COMPOSITIONS AND PIEZOELECTRIC ELEMENTS - A piezoelectric ceramic composition includes a main component represented by general formula {(Pb | 10-01-2009 |
20090295255 | MULTILAYERED PIEZOELECTRIC ELEMENT AND METHOD OF PRODUCING THE SAME - A multilayered piezoelectric element and a method of producing the multilayered piezoelectric element are disclosed. The multilayered piezoelectric element is made of piezoelectric ceramic layers and electrode formation layers which are alternately laminated. The piezoelectric ceramic layers are made of crystal oriented ceramic as polycrystalline material. The crystal oriented ceramic is made mainly of an isotropic perovskite type compound in which the specific {100} crystal plane of each of crystal grains that form the polycrystalline material is oriented. The electrode formation layers have electrode parts forming inner electrodes containing a conductive metal. The isotropic perovskite type compound is expressed by a general formula (1): [Ag | 12-03-2009 |
20090302714 | Piezo-electric composite sensor - The present invention provides a piezoelectric composite sensor comprising a piezoelectric material layer formed of a piezoelectric composite obtained by mixing piezoelectric material powder with a polymer, and electrodes formed of a conductive composite or conductive polymer obtained by mixing conductive filling particles with a polymer matrix and formed on both surfaces of the piezoelectric material layer. The piezoelectric composite sensor of the present invention has advantages of superior piezoelectric and dielectric properties, high mechanical strength, improved reliability and process flexibility, a simplified process and reduced process costs, and improved productivity. | 12-10-2009 |
20090302715 | PIEZOELECTRIC THIN FILM ELEMENTAL DEVICE - A piezoelectric thin film elemental device has a lower electrode, a piezoelectric thin film, and an upper electrode. The piezoelectric thin film has a thin film of a perovskite structure, expressed by a compositional formula (K | 12-10-2009 |
20090315432 | METAL OXIDE, PIEZOELECTRIC MATERIAL AND PIEZOELECTRIC ELEMENT - Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(Si | 12-24-2009 |
20100019624 | PIEZOELECTRIC/ELECTROSTRICTIVE CERAMICS SINTERED BODY AND METHOD OF CALCULATING DIFFUSE SCATTERING INTENSITY RATIO - An alkali niobate-based piezoelectric/electrostrictive ceramics sintered body including, as a main crystal phase, a perovskite type oxide containing at least one type of element selected from the group consisting of Li, Na and K as A site constituent elements and at least one type of element selected from the group consisting of Nb and Ta as B site constituent elements. The number of lattice-strained layers of the piezoelectric/electrostrictive ceramics sintered body is preferably small. A diffuse scattering intensity ratio, which is a ratio of an intensity of diffuse scattering by a lattice-strained layer present near a domain wall to a sum of an X-ray diffraction intensity of a first lattice plane and that of a second lattice plane different in interplanar spacing from the first lattice plane due to crystallographic symmetry reduction is preferably 0.5 or lower. | 01-28-2010 |
20100066211 | Multi-Layer Electronic Component and Method for Manufacturing the Same, Multi-Layer Piezoelectric Element - In order to provide a multi-layer electronic component in which the occurrence of delamination between the ceramic layer and the internal electrode is restricted and a method for manufacturing the same, the multi-layer electronic component of the present invention comprises a stack formed by stacking piezoelectric layers and internal electrodes one on another alternately and a pair of external electrodes formed on two opposing side faces of the stack, wherein the internal electrode consists of a first internal electrode connected to the external electrode formed on one of the two side faces and a second internal electrode located between the first internal electrode and connected to the external electrode formed on the other one of the two side faces, and wherein the internal electrodes and the piezoelectric layers are faced in proximity so that a space between them is 2 μm or less over an area occupying 50% or more of the active region where the first internal electrode and the second internal electrode oppose each other. | 03-18-2010 |
20100213795 | Sputtered Piezoelectric Material - Piezoelectric actuators having a composition of Pb | 08-26-2010 |
20110193451 | MANUFACTURING METHOD FOR PREFERENTIALLY-ORIENTED OXIDE CERAMICS, PREFERENTIALLY-ORIENTED OXIDE CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, ULTRASONIC MOTOR, AND DUST REMOVING DEVICE - Provided is a manufacturing method for preferentially-oriented oxide ceramics having a high degree of crystal orientation. The manufacturing method includes: obtaining slurry containing an oxide crystal B having magnetic anisotropy; applying a magnetic field to the oxide crystal B, and obtaining a compact of the oxide crystal B; and subjecting the compact to oxidation treatment to obtain preferentially-oriented oxide ceramics including a compact of an oxide crystal C having a crystal system that is different from a crystal system of one of a part and a whole of the oxide crystal B. By (1) reacting raw materials, (2) reducing the oxide crystal A, or (3) keeping the oxide crystal A at high temperature and quenching the oxide crystal A, the oxide crystal B is obtained to be used in the slurry. | 08-11-2011 |
20110298336 | CERAMIC, PIEZOELECTRIC DEVICE, AND PRODUCTION METHOD THEREOF - To provide a piezoelectric ceramic containing BiFeO | 12-08-2011 |
20140191619 | PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE - In a method of manufacturing a piezoelectric device, among a +C plane on a +Z axis side of a piezoelectric thin film and a −C plane on a −Z axis side of the piezoelectric thin film, the −C plane on the −Z axis side of the piezoelectric thin film is etched. Thus, −Z planes of the piezoelectric thin film on which epitaxial growth is possible are exposed. Ti is epitaxially grown on the −Z planes of the piezoelectric thin film in the −Z axis direction such that the crystal growth plane thereof is parallel to the −Z planes of the piezoelectric thin film. Al is then epitaxially grown on the surface of the Ti electrode in the −Z axis direction such that the crystal growth plane thereof is parallel to the −Z planes of the piezoelectric thin film. | 07-10-2014 |
20140252920 | THICK FILM FERROELECTRIC GENERATOR - Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material. | 09-11-2014 |
20140252921 | NUCLEAR MAGNETIC RESONANCE ELECTRIC GENERATOR - Methods, compositions, and apparatus for generating electricity are provided. Electricity is generated through the mechanisms nuclear magnetic spin and remnant polarization electric generation. The apparatus may include a material with high nuclear magnetic spin or high remnant polarization coupled with a poled ferroelectric material. The apparatus may also include a pair of electrical contacts disposed on opposite sides of the poled ferroelectric material and the high nuclear magnetic spin or high remnant polarization material. Further, a magnetic field may be applied to the high nuclear magnetic spin material. | 09-11-2014 |
20140339961 | THIN-FILM PIEZOELECTRIC ELEMENT, THIN-FILM PIEZOELECTRIC ACTUATOR, THIN-FILM PIEZOELECTRIC SENSOR, HARD DRIVE DISK, AND INKJET PRINTER - A thin film piezoelectric element according to the present invention includes a potassium sodium niobate thin film having a structure in which a plurality of crystal grains are present in a film thickness direction; and a pair of electrode films sandwiching the potassium sodium niobate thin film. When the potassium sodium niobate thin film is divided into three regions of the same thickness in the film thickness direction and average crystal grain sizes A | 11-20-2014 |
20150137667 | CERAMIC MATERIAL, SINTER, CERAMIC DEVICE, PIEZOELECTRICITY CERAMIC BIMORPH AND GLUING METHOD THEREOF - The present disclosure provides a piezoelectricityity ceramic material. The piezoelectricityity ceramic material includes main components that are represented by a general chemical formula of Pb(Mn | 05-21-2015 |
20160172576 | TWIN ENGINEERING TO IMPROVE THE SWITCHABILITY AND ROTATABILITY OF POLARIZATIONS AND DOMAINS IN FERROELECTRIC AND PIEZOELECTRIC MATERIALS | 06-16-2016 |
20220140227 | SUBSTRATE THINING USING TEMPORARY BONDING PROCESSES - An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less. | 05-05-2022 |
310359000 | More than one poling direction (e.g., Rosen transformer) | 6 |
20080203857 | Monolithic Piezoactuator With Rotation of the Polarisation in the Transition Region and Use of Said Piezoactuator - A piezoactuator has at least one piezoelectric-active partial stack with piezoceramic layers arranged one over the other with piezoceramic material and electrode layers arranged between the piezoceramic layers, at least one piezoelectric-inactive terminating region arranged over the partial stack and at least one transition region between the partial stack and the terminating region, the partial stack, the terminating region and the transition region all connected together to give a monolithic complete stack. The transition region has a transition region stack with piezoceramic layers arranged one over the other and electrode layers arranged between the piezoceramic layers both have a form and are arranged on each other such that, in the stack direction of the transition region stack, from piezoceramic layer to piezoceramic layer there is a successive rotation about a main axis of the polarity and/or a rotation of the main axis of the electric control is provided. | 08-28-2008 |
20080211353 | HIGH TEMPERATURE BIMORPH ACTUATOR - A bimorph actuator has been found that uses commonly available piezoelectric material and is operational up to about 150° C. or one half of Curie temperature, in that it does not exhibit depolarization due to negative electric fields and/or elevated temperature. This result is accomplished by driving both piezoelectric materials with a positive electric field along the polarization direction. | 09-04-2008 |
20090309460 | INSULATION PIEZOELECTRIC TRANSFORMER - The present invention discloses an insulation piezoelectric transformer, wherein upper electrodes and corresponding lower electrodes are respectively formed on the upper surface and lower surface of a ceramic substrate to form the primary side and the secondary side. A high DC voltage is applied to the primary side and the secondary side to polarize the ceramic material in between the upper and lower electrodes. The unpolarized portion of substrate still keeps the properties of a ceramic material and functions as an insulator of the primary and secondary sides. Therefore, the present invention functions as an insulation piezoelectric transformer. | 12-17-2009 |
20110291530 | CRYSTAL ORIENTED CERAMIC COMPOSITE BODY, AND PIEZOELECTRIC/ELECTROSTRICTIVE ELEMENT - A crystal oriented ceramic composite body including a substrate that has a first surface and a second surface, and a {100} oriented ceramic film that is disposed to face the first surface. The {100} oriented ceramic film includes a first sectional surface. The first sectional surface is perpendicular to the first surface, and a 90 degree domain includes a domain wall within a range of ±20 degrees of a normal to the first surface and occupies a surface area of at least ⅓ of the first sectional surface. | 12-01-2011 |
20130278115 | SLAT-CONSTRUCTED AUTONOMIC TRANSFORMERS - Multilayered piezoelectric transformers, transformer elements and methods of constructing piezoelectric transformers are disclosed. | 10-24-2013 |
20140132118 | SLAT-CONSTRUCTED AUTONOMIC TRANSFORMERS - Multilayered piezoelectric transformers, transformer elements and methods of constructing piezoelectric transformers are disclosed. | 05-15-2014 |