Class / Patent application number | Description | Number of patent applications / Date published |
257440000 | With different sensor portions responsive to different wavelengths (e.g., color imager) | 35 |
20080251876 | PHOTORECEIVER CELL WITH COLOR SEPARATION - A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning and configuration, which provide formation of the first and the second channels for diffusion of the secondary charge carriers generated in the substrate regions located under the first and the second potential barriers to the first and the third p-n junctions respectively; in this case, the length of the channels does not exceed the diffusion length of the secondary charge carriers. Some embodiments provide increased spatial resolution of the projected image and its dynamic range. Some embodiments provide small photo-cell area. Some embodiments are used in multielement photoreceivers for video cameras and digital cameras. | 10-16-2008 |
20090026568 | OPTICAL COLOR SENSOR SYSTEM - An optical color sensor system is provided including providing a substrate having an optical sensor therein and forming a passivation layer over the substrate. The passivation layer is planarized and color filters are formed over the passivation layer. A planar transparent layer is formed over the color filters and microlenses are formed on the planar transparent layer over the color filters. | 01-29-2009 |
20090050997 | Solid-state image capturing device, manufacturing method for the solid-state image capturing device, and electronic information device - A solid-state image capturing device having a plurality of light receiving sections for performing photoelectrical conversion on and capturing image light from a subject is provided. In the light receiving sections, a low concentration opposite conductivity layer is provided either on a single conductivity substrate or a single conductivity layer, a high concentration opposite conductivity layer having a higher impurity concentration than the low concentration opposite conductivity layer is provided on the low concentration opposite conductivity layer, and a photodiode is constituted by a PN junction of the single conductivity substrate or the single conductivity layer and the low concentration opposite conductivity layer. | 02-26-2009 |
20090057802 | Image Sensor and Method for Manufacturing the Same - Provided are an image sensor and a manufacturing method thereof. The image sensor can include a first epitaxial layer with a first ion implantation layer, a second epitaxial layer with a second ion implantation layer, and a third epitaxial layer with a third ion implantation layer on a substrate. The first, second, and third ion implantation layers can provide a red, green, and blue photodiode, respectively. A trench can be formed in the third epitaxial layer on the third ion implantation layer to remove the damaged surface of the third epitaxial layer. | 03-05-2009 |
20090072337 | IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS AND METHODS OF FORMING THE SAME - An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal. | 03-19-2009 |
20090121307 | SIMULTANEOUS UNIPOLAR MULTISPECTRAL INTEGRATED TECHNOLOGY (SUMIT) DETECTORS - A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength range, a second photodiode with a second p-type layer and a second n-type layer, the second photodiode generates charge when illuminated with photons of a second wavelength range, and a readout integrated circuit electrically coupled to the first n-type layer of the first photodiode via a first metal interconnect and electrically coupled to the second n-type layer of the second photodiode via a second metal interconnect, the second metal interconnect traverses through the first photodiode to contact the second n-type layer of the second photodiode, the second metal interconnect is separated from the first photodiode by a first passivating insulator. | 05-14-2009 |
20090127647 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; an insulating layer; and a wiring layer that is a high-concentration impurity layer, in this order, wherein the semiconductor device further includes a contact portion that electrically connects the semiconductor substrate with the wiring layer, the contact portion is provided to pass through the wiring layer and the insulating layer to be brought into contact with a surface of the semiconductor substrate, and the contact portion has an impurity concentration lower than that in a connection region of the semiconductor substrate being in contact with the contact portion. | 05-21-2009 |
20090152664 | Materials, Systems and Methods for Optoelectronic Devices - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 06-18-2009 |
20090166786 | Image Sensor and Method for Manufacturing the Same - An image sensor includes a metal interconnection and readout circuitry over a first substrate, an image sensing device, and an ion implantation isolation layer. The image sensing device is over the metal interconnection, and an ion implantation isolation layer is in the image sensing device. The image sensing device includes first, second and third color image sensing units, and ion implantation contact layers. The first, second and third color image sensing units are stacked in or on a second substrate. The ion implantation contact layers are electrically connected to the first, second and third color image sensing units, respectively. | 07-02-2009 |
20090184387 | SENSOR, SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS AND METHOD OF MANUFACTURING THE SAME - A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof. | 07-23-2009 |
20090206437 | Photo-detecting apparatus and photo-detecting method - A photo-detecting apparatus includes a photodiode that coverts light into electricity, a reverse-voltage switching unit that switches a reverse voltage to be applied to the photodiode, a current-difference detecting unit that detects a change in an output current of the photodiode occurring due to switching of the reverse voltage as a current difference, a correspondence retaining unit that retains a correspondence between the current difference and a dark current, a dark-current calculating unit that calculates a dark current by referring to the correspondence based on the current difference detected by the current-difference detecting unit, and a dark-current correcting unit that corrects the output current of the photodiode based on the dark current to find a photocurrent obtained through photoelectric conversion. | 08-20-2009 |
20090212383 | SOLID-STATE IMAGING DEVICE, CAMERA MODULE AND ELECTRONIC EQUIPMENT MODULE - To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which incorporate the solid-state imaging device. | 08-27-2009 |
20090243019 | OPTICAL SENSING DEVICE INCLUDING VISIBLE AND UV SENSORS - An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer. | 10-01-2009 |
20090294890 | MULTI-COLOUR SENSITIVE DEVICE FOR COLOR IMAGE SENSING - A sensor element ( | 12-03-2009 |
20090315136 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer provided between the pair of electrodes and a stress buffer layer provided between the photoelectric conversion layer and at least one of the electrodes, and the stress buffer layer has a stack structure comprising a crystalline sublayer. | 12-24-2009 |
20100140731 | IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS - An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal. | 06-10-2010 |
20100258892 | Radiation Receiver and Method of Producing a Radiation Receiver - A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated. | 10-14-2010 |
20100258893 | SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A method of manufacturing a solid-state imaging device includes: a first step of forming a recess portion on a top surface of a semiconductor substrate; a second step of selectively forming an impurity region of a first conductivity type in a lower portion of the recess portion by introducing impurities from a bottom surface of the recess portion; and a third step of forming a semiconductor layer in the recess portion, thus forming a photoelectric conversion portion which includes the impurity region and the semiconductor layer. | 10-14-2010 |
20110031576 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device includes a first-conductive semiconductor layer, a second-conductive semiconductor layer that is provided on the first-conductive semiconductor layer, a light receiving element that is formed in the second-conductive semiconductor layer, and an element isolation region that is formed to surround the light receiving element in an in-plane direction of the second-conductive semiconductor layer, in which the element isolation region includes a first-conductive first element isolation unit that is connected to the first-conductive semiconductor layer, a hollow that is formed on the first-conductive first element isolation unit, and a first-conductive second element isolation unit that is formed on the hollow. | 02-10-2011 |
20110073978 | INFRARED IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, an infrared imaging device includes a substrate, an infrared absorption unit, a thermoelectric conversion unit, a support body, and an interconnection. The infrared absorption unit is provided on the substrate and apart from the substrate to absorb an infrared ray. The thermoelectric conversion unit is provided apart from the substrate and in contact with the infrared absorption unit between the infrared absorption unit and the substrate. The thermoelectric conversion unit converts a temperature change due to the infrared ray absorbed by the infrared absorption unit into an electrical signal. The support body supports the thermoelectric conversion unit on the substrate and apart from the substrate and transmits the electrical signal. The interconnection transmits the electrical signal in reading the electrical signal. The infrared absorption unit includes a protrusion provided on a rim of the infrared absorption unit to protrude toward the substrate. | 03-31-2011 |
20110140225 | SEMICONDUCTOR DEVICE - In a first interlevel insulating film, a first region which is made of the first interlevel insulating film and in which first wiring films are not provided is formed to be located above a first light receiving part of the plurality of light receiving parts, and a second region which is made of the first interlevel insulating film and in which the first wiring films are not provided is formed to be located above a second light receiving part of the plurality of light receiving parts which is adjacent to the first light receiving part. A space between ones of the first wiring films with the first region interposed therebetween is larger than a space between ones of the first wiring films with the second region interposed therebetween. | 06-16-2011 |
20120001290 | SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device that includes: a semiconductor substrate having a recess portion formed on a top surface thereof; an impurity region of a first conductivity type formed in a portion of the semiconductor substrate disposed lower than a bottom surface of the recess portion; and a semiconductor layer of the first conductivity type formed in the recess portion, wherein the impurity region and the semiconductor layer form a photoelectric conversion. | 01-05-2012 |
20120068295 | MULTILAYER BISPECTRAL PHOTODIODE DETECTOR - This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and lower layers; and for each unitary detection element, two upper and lower semiconductor zones of a second conductivity type opposite to the first conductivity type, are arranged respectively so that they are in contact with the upper faces of the upper and lower layers so as to form PN junctions, the semiconductor zone being positioned, at least partially, in the bottom of an opening that passes through the upper and intermediate layers. The upper face of at least one of the upper and lower layers is entirely covered in a semiconductor layer of the second conductivity type. Cuts are made around each unitary detection element from the upper face of the stack and at least through the thickness of each semiconductor layer of the second conductivity type, entirely covering one or other of the upper and lower semiconductor layers of the first conductivity type, so as to form semiconductor zones of the second conductivity type. | 03-22-2012 |
20120112304 | IMAGE SENSOR - An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios. | 05-10-2012 |
20130299934 | PIXEL, PIXEL ARRAY, AND IMAGE SENSOR - A pixel and pixel array for use in an image sensor are provided. The image sensor includes floating sensing nodes symmetrically arranged with respect to a photodiode in each pixel. | 11-14-2013 |
20130341750 | SOLID-STATE IMAGING DEVICE, METHOD FOR CONTROLLING THE SAME, AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device including a plurality of pixels which are arranged in a two-dimensional array form and in each of which color separation is performed in a substrate depth direction. The solid-state imaging device includes a pixel addition section which performs addition, when pixel signals of the plurality of pixels are added up to be outputted, by setting addition regions of pixel signals of a first color component to be shifted from addition regions of pixel signals of a second color component at regular intervals. | 12-26-2013 |
20140021575 | PHOTODIODE ARRAY MODULE AND MANUFACTURING METHOD FOR SAME - This photodiode array module includes a first semiconductor substrate | 01-23-2014 |
20140175591 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 06-26-2014 |
20150130009 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a semiconductor device having a photoelectric conversion element having a high sensitivity, causing less blooming, and capable of providing a highly reliable image. The semiconductor device has a semiconductor substrate, a first p type epitaxial layer, a second p type epitaxial layer, and a first photoelectric conversion element. The first p type epitaxial layer is formed over the main surface of the semiconductor substrate. The second p type epitaxial layer is formed so as to cover the upper surface of the first p type epitaxial layer. The first photoelectric conversion element is formed in the second p type epitaxial layer. The first and second p type epitaxial layers are each made of silicon and the first p type epitaxial layer has a p type impurity concentration higher than that of the second p type epitaxial layer. | 05-14-2015 |
20150145091 | Single-Band and Dual-Band Infrared Detectors - Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed. | 05-28-2015 |
20150357361 | IMAGING DEVICE - When a visible light image and an image of a long-wavelength region with a near-infrared wavelength or longer are acquired using one imaging sensor, a clear image of the long-wavelength region with the near-infrared wavelength or longer is obtained. In an imaging sensor | 12-10-2015 |
20160027838 | COLOR IMAGE SENSOR WITHOUT THE COLOR FILTERS - In various embodiments, image sensors and methods of making images sensors are disclosed. In an embodiment, an image sensor includes a first pixel region having a pixel electrode, an optically sensitive material of a first thickness, and a counterelectrode. The images sensor also includes a second pixel region comprising a pixel electrode, an optically sensitive material of a second thickness, and a counterelectrode. The first pixel region is configured to detect light in a first spectral band and the second pixel region is configured to detect light in a second spectral band. The first and second spectral bands include an overlapping spectral range. The second spectral band also includes a spectral range that is substantially undetectable by the first pixel region. Other image sensors and methods of making images sensors are also disclosed. | 01-28-2016 |
20160087001 | TWO-TERMINAL MULTI-MODE DETECTOR - A two-terminal detector has a back-to-back p/n/p SWIR/MWIR stack structure, which includes P-SWIR absorber, N-SWIR, wide bandgap bather, N-MWIR absorber, and P-MWIR layers, with contacts on the P-MWIR and P-SWIR layers. The junction between the SWIR layers and the junction between the MWIR layers are preferably passivated. The detector stack is preferably arranged such that a negative bias applied to the top of the stack reverse-biases the MWIR junction and forward-biases the SWIR junction, such that the detector collects photocurrent from MWIR radiation. A positive bias forward-biases the MWIR junction and reverse-biases the SWIR junction, such that photocurrent from SWIR radiation is collected. A larger positive bias induces electron avalanche at the SWIR junction, thereby providing detector sensitivity sufficient to provide low light level passive amplified imaging. Detector sensitivity in this mode is preferably sufficient to provide high resolution 3-D eye-safe LADAR imaging. | 03-24-2016 |
20160155882 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES | 06-02-2016 |
20160163757 | VERY SMALL PIXEL PITCH FOCAL PLANE ARRAY AND METHOD FOR MANUFACTURING THEREOF - An imaging device includes a first semiconductor layer having a first surface and a second surface and a first photodetector having a first implanted region formed in the first semiconductor layer and a pad formed over the first implanted region. The imaging device also includes a readout circuit disposed over the first surface of the first semiconductor layer. The readout circuit has a plurality of contact plugs facing the first surface of the first semiconductor layer. The imaging device further includes a second semiconductor layer disposed below the second surface of the first semiconductor, a second photodetector having a second implanted region formed in the second semiconductor layer, and a metalized via extending through the first semiconductor layer and the second semiconductor layer and electrically connecting the second implanted region to a second of the contact plugs of the readout circuit. | 06-09-2016 |