Class / Patent application number | Description | Number of patent applications / Date published |
257144000 | Cathode emitter or cathode electrode feature | 21 |
20110108883 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Cutting work is performed on an n-semiconductor substrate ( | 05-12-2011 |
20110291157 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR - A lateral insulated gate bipolar transistor includes a semiconductor substrate including a drift layer, a collector region, a channel layer, an emitter region, a gate insulating layer, a gate electrode, a collector electrode, an emitter electrode, and a barrier layer. The barrier layer is disposed along either side of the collector region and is located to a depth deeper than a bottom of the channel layer. The barrier layer has an impurity concentration that is higher than an impurity concentration of the drift layer. The barrier layer has a first end close to the collector region and a second end far from the collector region. The first end is located between the channel layer and the collector region, and the second end is located on the bottom of the channel layer. | 12-01-2011 |
20120299056 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Techniques capable of improving the yield of IGBTs capable of reducing steady loss, turn-off time, and turn-off loss are provided. Upon formation of openings in an interlayer insulting film formed on a main surface of a substrate, etching of a laminated insulating film of a PSG film and an SOG film and a silicon oxide film is once stopped at a silicon nitride film. Then, the silicon nitride film and the silicon oxide film are sequentially etched to form the openings. As a result, the openings are prevented from penetrating through an n-type source layer and a p | 11-29-2012 |
20140151744 | POWER SEMICONDUCTOR DEVICES - A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure. | 06-05-2014 |
20140231868 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate and a first electrode. An element region, and a non-element region that surrounds this element region, are formed on the semiconductor substrate. The first electrode is arranged on the semiconductor substrate and is electrically connected to the element region formed on the semiconductor substrate. The first electrode is made of at least two materials having different moduli of elasticity. A modulus of elasticity per unit area of an outer peripheral portion of the first electrode when the semiconductor substrate is viewed from above is smaller than a modulus of elasticity per unit area of a center portion of the first electrode. | 08-21-2014 |
20140367738 | SEMICONDUCTOR DEVICE - A p-type thin-layer along a side wall surface of a V-shaped groove reaching the bottom portion of a p-type isolation layer from the back surface of an n | 12-18-2014 |
20150295071 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region. | 10-15-2015 |
20150318386 | SEMICONDUCTOR DEVICE - A semiconductor device includes stripe-shaped gate trench formed in one major surface of n-type drift layer, gate trench including gate polysilicon formed therein, and gate polysilicon being connected to a gate electrode; p-type base layer formed selectively in mesa region between adjacent gate trenches, p-type base layer including n-type emitter layer and connected to emitter electrode; one or more dummy trenches formed between p-type base layers adjoining to each other in the extending direction of gate trenches; and electrically conductive dummy polysilicon formed on an inner side wall of dummy trench with gate oxide film interposed between dummy polysilicon and dummy trench, dummy polysilicon being spaced apart from gate polysilicon. Dummy polysilicon may be connected to emitter electrode. The structure according to the invention facilitates providing an insulated-gate semiconductor device, the Miller capacitance of which is small, even when the voltage applied between the collector and emitter is low. | 11-05-2015 |
20150340480 | SEMICONDUCTOR DEVICE - A switching loss is prevented from being deteriorated by suppressing increase in a gate capacitance due to a cell shrink of an IE type trench gate IGBT. A cell formation region is configured of a linear active cell region, a linear hole collector cell region, and a linear inactive cell region between them. Then, upper surfaces of the third and fourth linear trench gate electrodes which are formed so as to sandwich both sides of the linear hole collector cell region and electrically connected to an emitter electrode are positioned to be lower than upper surfaces of the first and second linear trench gate electrodes which are formed so as to sandwich both sides of the linear active cell region and electrically connected to a gate electrode. | 11-26-2015 |
20150349103 | SEMICONDUCTOR DEVICE - A semiconductor device has mesa form first and second p-type base regions and a floating p-type region provided in a surface layer of an n−-type drift layer. The first p-type base region and floating p-type region are separated by a first trench. The second p-type base region is separated from the floating p-type region by a second trench. The first and second p-type base regions are conductively connected to an emitter electrode. The floating p-type region is in a floating state electrically isolated from the emitter electrode. A first gate electrode is provided via a first gate insulating film inside the first trench. An emitter potential second gate electrode is provided via a second gate insulating film inside the second trench. Therefore, di/dt controllability when turning on the semiconductor device can be increased. | 12-03-2015 |
20150357449 | Power Semiconductor Device - A power semiconductor device includes a semiconductor substrate layer of a first conductive type which has a lower part semiconductor layer of a second conductive type and an active region that includes a body region of the second conductive type, a source region of the first conductive type disposed in the body region, and a first doped region of the first conductive type at least a part of which is disposed below the body region. An emitter electrode is electrically connected to the source region, and a groove extends into the substrate layer and includes a shielding electrode electrically connected to the emitter electrode. The groove extends to a deeper depth into the substrate layer than the first doped region. At least a part of a gate is formed above at least a part of the source region and the body region, and is electrically insulated from the shielding electrode. | 12-10-2015 |
20150364585 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device may include: an n-drift part; a gate disposed in an upper portion of the n-drift part; an active part disposed to be in contact with the gate; an emitter part disposed in the active part and disposed to be in contact with the gate; an inactive part disposed to be spaced apart from the active part; a floating part disposed in the inactive part; and a dummy gate disposed to surround the inactive part in order to prevent a hole pass between the active part and the inactive part. | 12-17-2015 |
20150364587 | SEMICONDUCTOR DEVICE AND AN ELECTRONIC DEVICE - The reliability of a semiconductor device is improved. The semiconductor device includes a wire which is a conductive film pattern for a terminal formed over a first insulation film over a semiconductor substrate, a second insulation film formed over the first insulation film in such a manner as to cover the wire, and a nickel layer formed over the wire at a portion thereof exposed from an opening in the second insulation film. The wire is formed of a lamination film having a main conductor film containing aluminum as a main component, and a conductor film formed over the entire top surface of the main conductor film. The conductor film is formed of a titanium film, a tungsten film, or a titanium tungsten film. The nickel layer is formed over the conductor film at a portion thereof exposed from the opening. | 12-17-2015 |
20150380536 | SEMICONDUCTOR DEVICE - A semiconductor device in which an element region including at least an IGBT region is formed on a semiconductor substrate is presented. The IGBT region including: a collector layer; a drift layer; a body layer; a gate electrode placed inside a trench extending from the front surface of the semiconductor substrate to the drift layer; an emitter layer; and a contact layer having a higher impurity concentration than the body layer. In the semiconductor device, assuming that an x direction is a direction in which the trench extends along the front surface of the semiconductor substrate and that a y direction is a direction orthogonal to the x direction along the front surface of the semiconductor substrate, a distance from the contact layer to the emitter layer in the x direction is larger than a distance from the contact layer to the trench in the y direction. | 12-31-2015 |
20150380538 | TRENCH GATE MOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A p-type base region, in which an n | 12-31-2015 |
20160027906 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A p-layer on a surface layer of one of n | 01-28-2016 |
20160141402 | SEMICONDUCTOR DEVICE - A semiconductor substrate is provided with a first cell region, the first cell region including: an n-type emitter region; a p-type first top body region; an n-type first barrier region; an n-type first pillar region; and a p-type first bottom body region, the semiconductor substrate may further comprise: an n-type drift region; a p-type collector region; an n-type cathode region, the n-type first barrier region may include a first peak position where a peak of the n-type impurity density is present within a part linked to the n-type first pillar region, and a second peak position where a peak of the n-type impurity density is present within a part in contact with the gate insulating layer, and a depth of the first peak position from a front surface of the semiconductor substrate is different from a depth of the second peak position from the front surface of the semiconductor substrate. | 05-19-2016 |
20160155833 | SEMICONDUCTOR DEVICE AND AN ELECTRONIC DEVICE | 06-02-2016 |
20160172453 | REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR | 06-16-2016 |
20160254375 | POWER SEMICONDUCTOR DEVICE | 09-01-2016 |
20170236926 | SEMICONDUCTOR DEVICE | 08-17-2017 |