Class / Patent application number | Description | Number of patent applications / Date published |
257143000 | Having anode shunt means | 7 |
20090057713 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY - A semiconductor body includes a drift zone of a first conduction type. A body zone of a second conduction type complementary to the first conduction type is located near the surface in the semiconductor body. The semiconductor body includes a near-surface field stop zone of the second complementary conduction type and doped more lightly than the body zone. | 03-05-2009 |
20090140289 | SEMICONDUCTOR DEVICE - Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a P-type peripheral base region that is adjacent to the peripheral section of the first base region of the N-type to form a diode and a diode electrode that is formed on an upper face of the peripheral section of the first base region, thereby electrically connecting the diode electrode and a collector electrode of each of the IGBTs. When the semiconductor device is ON, current flows at the center side of the semiconductor substrate separated from the side face. When current in a reverse direction is generated when the semiconductor device is OFF, current in a reverse direction flows in the vicinity of the side face of the semiconductor substrate. | 06-04-2009 |
20090242931 | Semiconductor device having IGBT and diode - A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other. | 10-01-2009 |
20090283799 | Reduced Free-Charge Carrier Lifetime Device - According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer. | 11-19-2009 |
20100219448 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR DRIVING PLASMA DISPLAY USING THE SEMICONDUCTOR DEVICE - The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed. | 09-02-2010 |
20100230718 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. Further, the semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A first trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure includes electrically conductive material arranged in the first trench and coupled to the first electrode and a highly-doped diverter region of the second conductivity type. The diverter region of the voltage dependent short circuit diverter structure has the second conductivity type and is arranged to provide a diverter channel region of the second conductivity type between the diverter region and the second semiconductor layer in the event of a short circuit. | 09-16-2010 |
20110006341 | ESD PROTECTION ELEMENT - An electrostatic discharge (ESD) protection element using an NPN bipolar transistor, includes: a trigger element connected at one end with a pad. The NPN bipolar transistor includes: a first base diffusion layer; a collector diffusion layer connected with the pad; a trigger tap formed on the first base diffusion layer and connected with the other end of the trigger element through a first wiring; and an emitter diffusion layer and a second base diffusion layer formed on the first base diffusion layer and connected in common to a power supply through a second wiring which is different from the first wiring. | 01-13-2011 |