Entries |
Document | Title | Date |
20080210951 | Method For Fabricating High-Quality Semiconductor Light-Emitting Devices On Silicon Substrates - One embodiment of the present invention provides a semiconductor light-emitting device which includes: (1) a silicon (Si) substrate; (2) a silver (Ag) transition layer which is formed on a surface of the Si substrate, wherein the Ag transition layer covers the Si substrate surface; and (3) an InGaAlN, ZnMgCdO, or ZnBeCdO-based semiconductor light-emitting structure which is fabricated on the Ag-coated Si substrate. Note that the Ag transition layer prevents the Si substrate surface from forming an amorphous overcoat with reactant gases used for growing the semiconductor light-emitting structure. | 09-04-2008 |
20080237611 | ELECTROLUMINESCENT DEVICE HAVING IMPROVED CONTRAST - A method for increasing ambient light contrast ratio within an electroluminescent device, including: a reflective electrode and a transparent electrode having an EL unit formed there-between. The EL unit includes a light-emitting layer containing quantum dots. Additionally, the method includes locating a contrast enhancement element on a side of the transparent electrode opposite the EL unit. The contrast enhancement element includes a patterned reflective layer and a patterned light-absorbing layer whose patterns define one or more transparent openings, so that light emitted by the light-emitting layer passes through the one or more transparent openings. The patterned reflective layer is located between the patterned light absorbing layer and the transparent electrode. | 10-02-2008 |
20080258154 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DISPLAY DEVICE - Disclosed herein is a semiconductor device manufacturing method for performing an annealing process of irradiating a semiconductor film on which element forming areas including thin film transistor forming areas are arranged in a two-dimensional pattern with energy beams using a plurality of irradiating optical systems, wherein in the annealing process, an area irradiated with the energy beams is divided into a single beam irradiated area irradiated by each of the plurality of irradiating optical systems with an energy beam singly and a boundary area situated between single beam irradiated areas adjacent to each other and irradiated by both of two irradiating optical systems performing beam irradiation of the single beam irradiated areas with energy beams. | 10-23-2008 |
20080277671 | Semiconductor device, method of manufacturing the same, electro-optic device and electronic apparatus - The invention provides a semiconductor device, a method of manufacturing the same, an electro-optic device and an electronic apparatus which are capable of addressing or solving a problem of mechanical mounting of a semiconductor element chip on a substrate. A semiconductor device includes a tile-shaped microelement bonded to a substrate, and an insulating functional film provided to cover at least a portion of the tile-shaped microelement. | 11-13-2008 |
20080283846 | METHOD FOR GROWING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ELECTRONIC DEVICE - Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure. | 11-20-2008 |
20080290349 | Compound semiconductor wafer, light emitting diode and manufacturing method thereof - A light emitting diode includes a compound semiconductor crystal layer ( | 11-27-2008 |
20080296588 | Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof - The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the epitaxy of the semiconductor light-emitting device is to be performed, has a plurality of electromagnetic-wave-scribed nicks. | 12-04-2008 |
20080315212 | METHOD FOR FABRICATING A P-TYPE SEMICONDUCTOR STRUCTURE - One embodiment of the present invention provides a method for fabricating a group III-V p-type nitride structure. The method comprises growing a first layer of p-type group III-V material with a first acceptor density in a first growing environment. The method further comprises growing a second layer of p-type group III-V material, which is thicker than the first layer and which has a second acceptor density, on top of the first layer in a second growing environment. In addition, the method comprises growing a third layer of p-type group III-V material, which is thinner than the second layer and which has a third acceptor density, on top of the second layer in a third growing environment. | 12-25-2008 |
20080315213 | Process for Producing an Electroluminescent P-N Junction Made of a Semiconductor Material by Molecular Bonding - A method for making an electroluminescent PN junction includes molecular bonding a face in a crystalline semiconducting material doped with a first type of a first element with a face in a crystalline semiconducting material doped with a second type opposite to the first type, of a second element, at a bonding interface. The semiconducting material has an indirect forbidden band. The crystalline lattices shown by the faces are shifted in rotation by a predetermined angle so as to at least cause formation of a network of screw type dislocations at the bonding interface. | 12-25-2008 |
20090001385 | APPARATUS AND METHOD FOR MODULATING PHOTON OUTPUT OF A QUANTUM DOT LIGHT EMITTING DEVICE - An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer ( | 01-01-2009 |
20090001386 | Semiconductor device and method of manufacturing the same - The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part. | 01-01-2009 |
20090001387 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semiconductor layer is processed into an island shape. After that, a second single-crystal semiconductor layer is provided over the insulating substrate so as to overlap with part of a region where the first single-crystal semiconductor layer is provided. After that, the second single-crystal semiconductor layer is processed into an island shape. Thus, defects at joint portions in the case of providing the single-crystal semiconductor layers can be reduced. | 01-01-2009 |
20090008652 | Free-Standing Substrate, Method for Producing the Same and Semiconductor Light-Emitting Device - The present invention provides a free-standing substrate, a method for producing the same and a semiconductor light-emitting device. The free-standing substrate comprises a semiconductor layer and inorganic particles, wherein the inorganic particles are included in the semiconductor layer. The method for producing a free-standing substrate comprises the steps of: (a) placing inorganic particles on a substrate, (b) growing a semiconductor layer thereon, and (c) separating the semiconductor layer from the substrate, in that order. The semiconductor light-emitting device comprises the free-standing substrate, a conductive layer, a light-emitting device, and electrodes. | 01-08-2009 |
20090014731 | LED Chip Design for White Conversion - A light emitting diode is disclosed, together with associated wafer structures, and fabrication and mapping techniques. The diode includes an active portion, a raised border on the top surface of the active portion and around the perimeter of the top surface of the active portion, a resin in the space defined by the border and the top surface of the active portion, and phosphor particles in the resin that convert the frequencies emitted by the active portion. | 01-15-2009 |
20090032822 | HIGH POWER LIGHT EMITTING DIODE - A high power light emitting diode, The high power light emitting diode comprises a light emitting diode chip, a main module, two first electrode pins, two second electrode pins, and at least one heat dissipation board. The main module has a concave and the light emitting diode chip is positioned in the concave. The first electrode pins are connected to a first side of the main module and also electrically connected to the light emitting diode chip. The second electrode pins are arranged on a second side of the main module that is relative to the first electrode pins wherein the second electrode pins and the first electrode pins are electrically opposite. The second electrode pins are electrically connected to the light emitting diode chip. The heat dissipation board is connected to a part of the main module between the first electrode pin and the second electrode pin. | 02-05-2009 |
20090050903 | Selective wet etching of gold-tin based solder - The present invention is directed to post-deposition, wet etch processes for patterning AuSn solder material and devices fabricated using such processes. The processes can be applied to uniform AuSn layers to generate submicron patterning of thin AuSn layers having a wide variety of features. The use of multiple etching steps that alternate between different mixes of chemicals enables the etch to proceed effectively, and the same or similar processes can be used to etch under bump metallization. The processes are simple, cost-effective, do not contaminate equipment or tools, and are compatible with standard cleanroom fabrication processes. | 02-26-2009 |
20090050904 | LIGHT EMITTING DIODE CIRCUIT - A light emitting diode circuit includes a chip and a light emitting diode. The chip includes a current control unit that is used for controlling a driving current flowing through a path. The light emitting diode is positioned outside of the chip and is coupled to the path. The light emitting diode generates a light source according to the driving current. The light emitting diode circuit can directly control the current value of a driving current flowing through the light emitting diode. In this way, the circuit design is simplified and the production cost of the electronic product is reduced. | 02-26-2009 |
20090072245 | Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtained - A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots. | 03-19-2009 |
20090072246 | Diode and memory device comprising the same - Provided are a diode and a memory device comprising the diode. The diode includes a p-type semiconductor layer and an n-type semiconductor layer, wherein at least one of the p-type semiconductor layer and the n-type semiconductor layer comprises a resistance changing material whose resistance is changed according to a voltage applied to the resistance changing material. | 03-19-2009 |
20090072247 | Light emitting display device and method of fabricating the same - A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an intrinsic region and a P-type doping region coupled to each other. | 03-19-2009 |
20090085045 | METHOD FOR PRODUCING A MATRIX OF INDIVIDUAL ELECTRONIC COMPONENTS AND MATRIX PRODUCED THEREBY - The invention relates to a method for producing a matrix of electronic components, comprising a step of producing an active layer on a substrate, and a step of individualizing the components by forming trenches in the active layer at least until the substrate emerges. The method comprises steps of depositing a layer of functional material on the active layer, depositing a photosensitive resin on the layer of material in such a way as to fill said trenches and to form a thin film on the upper face of the components, at least partially exposing the resin to radiation while underexposing the portion of resin in the trenches, developing the resin in such a way as to remove the properly exposed portion thereof, removing the functional material layer portion that shows through after the development step, and removing the remaining portion of resin. | 04-02-2009 |
20090095959 | HEAT DISSIPATION DEVICE FOR LED CHIPS - A heat dissipation device for removing heat from LED chips includes a heat sink and a plurality of substrates. The heat sink comprises a base plate. A plurality of fins extends upwardly from the base plate. The substrates each have a unidirectional heat transfer and are attached to a bottom face of the heat sink. Each of the substrates defines a first wall on which The LED chips are mounted and a second wall coupled to the heat sink. The substrates only transfer heat from the first wall to the second wall and restrict the heat transfer in a reverse direction. When the LED chips generate heat, the heat is transferred to the fins of the heat sink via the unidirectional substrates to lower temperature of the LED chips. | 04-16-2009 |
20090095960 | HEAT DISSIPATION MEMBER, SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR LIGHT EMITTING APPARATUS - A heat dissipation member includes a first plate-shaped member and a second plate-shaped member. The first plate-shaped member has a first surface thermally connectable with a heat generating element and a second surface. The second plate-shaped member is thermally connected with the second surface of the first plate-shaped member. The first plate-shaped member and the second plate-shaped member form a laminated-plate-shaped member. The laminated-plate-shaped member defines an inlet for admission of a fluid and an outlet communicating with the inlet for ejection of the fluid. The second surface of the first plate-shaped member forms asperities thereon. | 04-16-2009 |
20090114925 | PHOTON PAIR GENERATING DEVICE - A photon pair generating device capable of further increasing generation efficiency of a correlation photon pair is provided, the photon pair generating device generating the correlation photon pair by a hyper-parametric scattering. A quantum well ( | 05-07-2009 |
20090114926 | Light-emitting device - A light-emitting device includes a pixel having a transistor provided over a substrate, and a light-emitting element. The transistor includes a single-crystal semiconductor layer which forms a channel formation region, a silicon oxide layer is provided between the substrate and the single-crystal semiconductor layer, a source or a drain of the transistor is electrically connected to an electrode of the light-emitting element, and the transistor is operated in a saturation region when the light-emitting element emits light. Further, in the light-emitting device, a gray scale of the light-emitting element is displayed by changing a potential applied to the gate of the transistor. | 05-07-2009 |
20090127567 | LED CHIP THERMAL MANAGEMENT AND FABRICATION METHODS - The present invention relates to a method of fabricating a high power light-emitting device using an electrolessly or electrolytically plated metal composite heat dissipation substrate having a high thermal conductivity and a thermal expansion coefficient matching with the device. | 05-21-2009 |
20090127568 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting element includes a substrate | 05-21-2009 |
20090134406 | LIGHT EMITTING DIODE OF HIGH QUANTUM EFFICIENCY AND SYSTEM THEREOF - A light emitting diode (LED) includes a transparent substrate, a first type cladding layer, an active layer, a second type cladding layer, and first and second electrodes. The first type cladding layer is disposed on the transparent substrate. The active layer and the second electrode are juxtaposed on the first type cladding layer. The second type cladding layer is disposed on the active layer. The second electrode is disposed on the second type cladding layer. The first and second type cladding layers are doped with nanoparticles. | 05-28-2009 |
20090159899 | LIGHT- EMITTING DEVICE - A light-emitting device includes a substrate having an epitaxial-forming surface and a back surface opposite to the epitaxial-forming surface, the substrate being formed with a recess indented from the back surface, the back surface having a recessed portion that defines the recess, and a planar portion extending outwardly from the recessed portion; an epitaxy layer; a continuous heat-dissipating layer formed on the planar portion and the recessed portion of the back surface of the substrate; and first and second electrodes coupled electrically to the epitaxy layer. | 06-25-2009 |
20090173952 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, ILLUMINATOR AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate ( | 07-09-2009 |
20090184329 | Positive electrode for semiconductor light-emitting device - An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. | 07-23-2009 |
20090184330 | LIGHT-EMITTING MODULE INCLUDING SUBSTRATE WITH SPACE FORMED AROUND RIM - A light-emitting module includes a light-emitting element, a substrate on which are mounted the light-emitting element and heat dissipater. The substrate and heat dissipater are connected together by one mounting member and a space is formed around the rim of the substrate. | 07-23-2009 |
20090200560 | Light emitting device and method of forming the same - An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower layer and the first upper layer; a second thick layer neighboring the first multi-layer structure; a second connection layer associated with the second thick layer; a connective line electrically connected to the second connection layer and the first multi-layer structure; a substrate; and two or more ohmic contact electrodes between the first multi-layer structure and the substrate. | 08-13-2009 |
20090212302 | Substrate of liquid crystal device and method for manufacturing the same - A method for manufacturing a substrate of a liquid crystal display device is disclosed. The method includes forming a conductive line structure with low resistance to improve the difficulty of the resistance matching. The method can effectively reduce the resistance of the conductive line of the LCD panel to increase the transmission rate of the driving signal. Hence, the increasing yield of products can reduce the cost of manufacturing, and can meet the requirement of the large-size and high-definition thin film transistor liquid crystal display device. | 08-27-2009 |
20090230407 | LED DEVICE AND METHOD FOR FABRICATING THE SAME - An LED device has a substrate, an N-type semiconductor layer formed on the substrate, a light-emitting layer on the N-type semiconductor layer, a P-type semiconductor layer on the light-emitting layer and a transparent electrode layer formed on the P-type semiconductor layer. A top surface of the transparent electrode layer is formed to have multiple micro concave-convex structures to mitigate the light-emitting loss resulted from total reflection, and increase the light-emitting efficiency of the LED device. | 09-17-2009 |
20090242902 | LIGHT EMITTING DEVICES WITH CONSTANT FORWARD VOLTAGE - A light emitting device and method for producing the same is disclosed. The light emitting device includes a semiconductor material, an electrode positioned on the semiconductor material, a wire bonding area, and a resistor connected between the wire bonding area and the electrode. | 10-01-2009 |
20090267083 | TRENCHED SUBSTRATE FOR CRYSTAL GROWTH AND WAFER BONDING - A substrate for a light emitting diode (LED) can have one or more trenches formed therein so as to mitigate stress build up within the substrate due to mismatched thermal coefficients of expansion between the substrate and layers of material, e.g., semiconductor material, formed thereon. In this manner, the likelihood of damage to the substrate, such as cracking thereof, is substantially mitigated. | 10-29-2009 |
20090278138 | LAMINATED STRUCTURE AND IMAGE DISPLAY DEVICE - A laminated structure includes a wettability variable layer formed on a substrate, including a material whose critical surface tension varies by receiving energy so that high and low surface energy regions are formed; a conductive layer formed in one of the high surface energy regions; and an insulating layer formed in such a manner as to cover the conductive layer, wherein another one of the high surface energy regions is formed in such a manner as to surround a periphery of a circuit formation region in which a plurality of the conductive layers are formed; and the insulating layer is formed in such a manner as to also cover the another one of the high surface energy regions so that an adhesive guard ring region is formed between the wettability variable layer and the insulating layer. | 11-12-2009 |
20090294778 | LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, AND ELECTRONIC SYSTEM - A light-emitting device includes a cathode, an anode, a first light-emitting layer that is disposed between the cathode and the anode and that emits light of a first color, a second light-emitting layer that is disposed between the first light-emitting layer and the cathode and that emits light of a second color different from the first color, and an intermediate layer that is disposed between and in contact with the first light-emitting layer and the second light-emitting layer and that contains a first material and a second material different from the first material. The light-emitting device satisfies inequality (1): | 12-03-2009 |
20090321748 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided are a light emitting diode and a method for manufacturing the same. In the method, a semiconductor layer is formed, and a mask layer is formed on the semiconductor layer. Laser is irradiated onto a scribing region of the mask layer to divide the semiconductor layer into a plurality of light emitting diodes. The scribing region is etched, and then the mask layer is removed. The plurality of light emitting diodes are then separated from each other. | 12-31-2009 |
20090321749 | Light Emitting Device and Method of Manufacturing a Light Emitting Device - A light emitting device comprising a heat sink, a dielectric layer arranged on the heat sink, a heat conductive layer arranged on the dielectric layer, an undercoating arranged on at least a part of the heat conductive layer, and a light emitting chip attached to the heat conductive layer by means of the undercoating. | 12-31-2009 |
20100001294 | LED module having a heat sink - The invention relates to an LED module ( | 01-07-2010 |
20100006862 | Substrate for fabricating light emitting device and light emitting device fabricated therefrom - The invention provides a substrate for fabricating a light emitting device and the light emitting device fabricated therefrom. The substrate includes at least one platform region having a first facet direction for epitaxial growth; and a plurality of continuous protruded portions surrounding the at least one platform region to isolate the at least one platform region from another platform region, wherein the first facet direction is substantially excluded from facet directions of the plurality of continuous protruded portions. Since facet directions of the plurality of continuous protruded portions substantially do not include the first facet direction, during formation of the light emitting device, epitaxial growth is mainly conducted on the at least one platform region, which may prevent epitaxial defects from generating and enhance external quantum efficiency of the light emitting device. | 01-14-2010 |
20100019251 | Semiconductor Light Emitting Device - A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate. | 01-28-2010 |
20100032687 | ENGINEERED STRUCTURE FOR HIGH BRIGHTNESS SOLID-STATE LIGHT EMITTERS - Electroluminescent (EL) light emitting structures comprises one or more active layers comprising rare earth luminescent centres in a host matrix for emitting light of a particular colour or wavelength and electrodes for application of an electric field and current injection for excitation of light emission. The host matrix is preferably a dielectric containing the rare earth luminescent centres, e.g. rare earth doped silicon dioxide, silicon nitride, silicon oxynitrides, alumina, dielectrics of the general formula Si | 02-11-2010 |
20100032688 | LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A transparent conductive semiconductor substrate | 02-11-2010 |
20100051965 | Carbon-Containing Semiconductor Substrate - A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed. | 03-04-2010 |
20100051966 | Methods of Making Semiconductor-Based Electronic Devices on a Wire and Articles That Can Be Made Using Such Devices - Strands of active electronic devices (AEDs), such as FETs, are made by first completely or partially forming a plurality of the AEDs on a precursor substrate. Then, one or more elongate conductors (e.g., wires) are secured to ones of the AEDs so as to electrically connected the AEDs together. After securing the conductor(s) to corresponding respective ones of the AEDs, the connected ones of the AEDs and their respective conductor(s) is/are liberated as one or more composite members from the precursor substrate by removing material from the substrate. Each of the composite substrates is further processed as needed to complete an AED strand. | 03-04-2010 |
20100059765 | Light-Emitting Device With Improved Electrode Structures - A light-emitting device includes first and second semiconductor layers and a light-emitting layer between the first and second semiconductor layers. The light-emitting device also includes an improved electrode structures. | 03-11-2010 |
20100059766 | STORAGE OF AN IMAGE IN AN INTEGRATED CIRCUIT - An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion. | 03-11-2010 |
20100102333 | ORGANIC LIGHT EMITTING DISPLAY AND FABRICATING METHOD THEREOF - An organic light emitting display includes an insulating substrate having a first area, a second area, and a third area, an organic layer located in the second area, a pixel electrode located on the organic layer in the first area and the second area, and a partition wall including an opening exposing a portion of the pixel electrode. The organic light emitting display further includes an organic light emitting member located in the opening and a common electrode located on the organic light emitting member. The opening is disposed in the first area, and the third area includes a trench separating the second area from an adjacent second area. | 04-29-2010 |
20100140629 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer. | 06-10-2010 |
20100140630 | Method And Apparatus For Manufacturing LED Devices Using Laser Scribing - A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices. | 06-10-2010 |
20100148188 | LASER-INDUCED FLAW FORMATION IN NITRIDE SEMICONDUCTORS - An embodiment is a method and apparatus to induce flaw formation in nitride semiconductors. Regions of a thin film structure are selectively decomposed within a thin film layer at an interface with a substrate to form flaws in a pre-determined pattern within the thin film structure. The flaws locally concentrate stress in the pre-determined pattern during a stress-inducing operation. The stress-inducing operation is performed. The stress-inducing operation causes the thin film layer to fracture at the pre-determined pattern. | 06-17-2010 |
20100148189 | LIGHT EMITTING DIODE - A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode. | 06-17-2010 |
20100155744 | SEMICONDUCTOR NANOCRYSTAL COMPOSITE - A nanocrystal composite that includes a matrix including semiconductor nanocrystals, and a barrier layer disposed on at least a portion of the surface of the matrix and including a polymer with low oxygen permeability, low moisture permeability, or both. | 06-24-2010 |
20100187545 | SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME - The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate. | 07-29-2010 |
20100193802 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device is provided. The method includes steps of forming a semiconductor element layer on a first substrate; bonding a second substrate to the semiconductor element layer; and replacing the first substrate with a combining substrate, wherein the combining substrate has a thermal conductivity larger than that of the first substrate. | 08-05-2010 |
20100200867 | VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface. | 08-12-2010 |
20100207127 | LIGHT EMITTING DIODE WITH A TEMPERATURE DETECTING PATTERN AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision. | 08-19-2010 |
20100207128 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of isolation layers formed along an outer peripheral portion of the light emitting structure below the light emitting structure, a metal layer interposed between the isolation layers, and a second electrode layer formed below the light emitting structure. | 08-19-2010 |
20100219419 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - Provided is a semiconductor element which can suppress deterioration of element characteristics even when a semiconductor element section includes a plurality of directions having different thermal expansion coefficients within an in-plane direction. A semiconductor laser element (the semiconductor element) is provided with the semiconductor element section, which includes a direction of [1-100] and a direction of [0001] having different thermal expansion coefficients within the in-plane direction of a main surface, and a sub-mount, which includes an arrow (E) direction and an arrow (F) direction having different thermal expansion coefficients within the in-plane direction of the main surface. The semiconductor element section is bonded on the sub-mount so that the direction [1-100] of the semiconductor element section is close to the side of the arrow (E) direction than the arrow (F) direction of the sub-mount. | 09-02-2010 |
20100224887 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor multilayer structure including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode connected to the first semiconductor layer of the semiconductor multilayer structure; a second electrode provided on the second semiconductor layer of the semiconductor multilayer structure; and a third electrode connected to the second electrode. The second electrode is provided between the first electrode and the third electrode as viewed in a direction perpendicular to a major surface of the semiconductor multilayer structure, and includes: a first region having at least one notch extending toward a route connecting between the first electrode and the third electrode; a second region provided around the first electrode and having no notch; and a third region provided around the third electrode and having no notch. | 09-09-2010 |
20100237357 | Light Emitting Device Having Pillar Structure with Roughness Surface and the Forming Method Thereof - A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer. | 09-23-2010 |
20100244053 | Light emitting device having pillar structure with hollow structure and the forming method thereof - A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure. | 09-30-2010 |
20100244054 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPOSITE DEVICE - A method for manufacturing a semiconductor device, includes: a step of etching a Si (111) substrate along a (111) plane of the Si (111) substrate to separate a Si (111) thin-film device having a separated surface along the (111) plane. | 09-30-2010 |
20100258818 | LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF - The present invention provides a manufacturing method of an LED chip. First, a device layer is formed on a growth substrate, wherein the device layer has a first surface connected to the growth substrate and a second surface. Next, a plurality of first trenches are formed on the second surface of the device layer. Then, a protection layer is formed on the side walls of the first trenches. After that, the second surface is bonded with a supporting substrate and the device layer is then separated from the growth substrate. Further, a plurality of second trenches corresponding to the first trenches are formed in the device layer to form a plurality of LEDs, wherein the second trenches extend from the first surface to the bottom portions of the first trenches. Furthermore, a plurality of electrodes are formed on the first surface of the device layer. | 10-14-2010 |
20100276704 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting device and a method for fabricating the same are discussed. According to an embodiment, the method includes forming a mother substrate structure including organic light emitting devices including TFTs and first electrodes, each first electrode electrically connected to the corresponding TFT and being a part of an OLED to be formed; forming first and second conductive layers to form a power line in each organic light emitting device; forming a dummy layer on the first electrodes and the second conductive layer; performing at least one of scribing and grinding processes on the mother substrate structure to divide the mother substrate structure into sub-substrate structures; removing the dummy layer from the first electrodes and the second conductive layer after the performing step; and forming a light emitting layer and a second electrode on the first electrode in one of the sub-substrate structures to form the OLED. | 11-04-2010 |
20100283062 | OPTOELECTRONIC SYSTEM - An embodiment of the invention discloses an optoelectronics system and a method of making the same. The method includes steps of providing a temporary substrate; providing un-packaged optoelectronic elements on the temporary substrate; forming a trench between two of the un-packaged optoelectronic elements; providing an adhesive material to fill the trench and cover the optoelectronic elements; providing a permanent substrate on the adhesive material; and removing the temporary substrate. | 11-11-2010 |
20100314630 | LIGHT EMITTING DIODE SYSTEMS - Light emitting diode systems are disclosed. An optical display system that includes a light emitting diode (LED) and a cooling system is disclosed. The cooling system is configured so that, during use, the cooling system regulates a temperature of the light emitting diode. | 12-16-2010 |
20100320478 | LIGHT-EMITTING DIODE DEVICE INCLUDING A CURRENT BLOCKING REGION AND METHOD OF MAKING THE SAME - A light-emitting diode device includes: a substrate; a light-emitting layered structure disposed on the substrate and including a first cladding layer, an active layer, and a second cladding layer; a first electrode; a second electrode disposed on the light-emitting layered structure; and a current blocking region provided in the light-emitting layered structure below the second electrode, and having a main portion that is aligned below and is as large as the second electrode, and an extension portion extending from the main portion and protruding beyond the second electrode to a distance ranging from 3 μm to 20 μm. | 12-23-2010 |
20110001145 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments provide a semiconductor light emitting device which comprises a light emitting structure comprising a plurality of compound semiconductor layers, an insulation layer on an outer surface of the light emitting structure, an ohmic layer under the light emitting structure and on an outer surface of the insulation layer, a first electrode layer on the light emitting structure, and a tunnel barrier layer between the first electrode layer and the ohmic layer. | 01-06-2011 |
20110001146 | Light-Emitting Device, Lighting Device, and Electronic Device - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained. | 01-06-2011 |
20110001147 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces. | 01-06-2011 |
20110024770 | Inverted Bottom-Emitting OLED Device - A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 10 | 02-03-2011 |
20110031508 | Method and Apparatus for Manufacturing LED Devices using Laser Scribing - A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices. | 02-10-2011 |
20110042688 | BUFFER BILAYERS FOR ELECTRONIC DEVICES - The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer including a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals. | 02-24-2011 |
20110062451 | LIGHT-EMITTING ELEMENT - According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The light-emitting thyristor includes a second anode layer, a second gate layer, and a second cathode layer. The vertical type gate load resistor is arranged on the first gate layer under a power line and limits a current flowing from the first gate layer and the second gate layer to the power line. | 03-17-2011 |
20110062452 | METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of Mg | 03-17-2011 |
20110062453 | COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, ILLUMINATING APPARATUS USING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate. | 03-17-2011 |
20110084286 | DONOR SUBSTRATE AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE USING THE SAME - A donor substrate for laser induced thermal imaging and a method of fabricating an organic light emitting diode (OLED) using the donor substrate are disclosed. In one embodiment, the donor substrate includes a base film, a light-to-heat conversion layer formed on the base film, a buffer layer formed on the light-to-heat conversion layer, and a transfer layer formed on the buffer layer. The buffer layer is formed of magnesium (Mg), an Mg alloy, or magnesium oxide. In the donor substrate for laser induced thermal imaging, the buffer layer is formed between the interlayer and the transfer layer or between the light-to-heat conversion layer and the transfer layer, so that surface characteristics between the donor substrate and the transfer layer can be improved. | 04-14-2011 |
20110089434 | DISPLAY PANEL AND REWORK METHOD OF GATE INSULATING LAYER OF THIN FILM TRANSISTOR - A rework method of a gate insulating layer of a thin film transistor includes the following steps. First, a substrate including a silicon nitride layer, which serves as a gate insulating layer, disposed thereon. Subsequently, a first film removal process is performed to remove the silicon nitride layer. The first film removal process includes an inductively coupled plasma (ICP) etching process. The ICP etching process is carried out by introducing gases including sulfur hexafluoride and oxygen. The ICP etching process has an etching selectivity ratio of the silicon nitride layer to the substrate, which is substantially between 18 and 30. | 04-21-2011 |
20110089435 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a passivation layer at least partially on the light emitting structure; a first electrode on the first conductive semiconductor layer; and a second electrode on the first electrode and the passivation layer. | 04-21-2011 |
20110089436 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A method of manufacturing a light emitting device according to the embodiment includes the steps of partially forming a first buffer layer on a growth substrate, in which the first buffer layer has a Young's modulus smaller than that of the growth substrate; and forming a light emitting structure layer on the growth substrate and the first buffer layer, in which the light emitting structure layer includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers. | 04-21-2011 |
20110089437 | CROSS FLOW CVD REACTOR - A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated. | 04-21-2011 |
20110095306 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a second electrode under the second conductive semiconductor layer; a first texture over a first region of the first conductive semiconductor layer; an A-electrode over the first region of the first conductive semiconductor layer; and a B-electrode over a second region of the first conductive semiconductor layer, wherein the B-electrode includes a pad electrode connected to a wire. | 04-28-2011 |
20110095307 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed are a light emitting device, a light emitting device package and a lighting system. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer over the first conductive semiconductor layer, and a second conductive semiconductor layer over the active layer; a dielectric layer over a first region of the first conductive semiconductor layer; a second electrode over the dielectric layer; and a first electrode over a second region of the first conductive semiconductor layer. | 04-28-2011 |
20110095308 | PROCESS FOR FORMING AN ELECTROACTIVE LAYER - There is provided a process for forming a layer of electroactive material having a substantially flat profile. The process includes the steps of providing a workpiece having at least one active area; depositing a liquid composition including the electroactive material onto the workpiece in the active area, to form a wet layer; treating the wet layer on the workpiece at a controlled temperature in the range of −25 to 80° C. and under a vacuum in the range of 10 | 04-28-2011 |
20110101379 | Method for Manufacturing Light-Emitting Element, Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Appliance - One object is to provide a light-emitting element which overcomes the problems of electrical characteristics and a light reflectivity have been solved. The light-emitting element is manufactured by forming a first electrode including aluminum and nickel over a substrate; by forming a layer including a composite material in which a metal oxide is contained in an organic compound so as to be in contact with the first electrode after heat treatment is performed with respect to the first electrode; by forming a light-emitting layer over the layer including a composite material; and by forming a second electrode which has a light-transmitting property over the light-emitting layer. Further, the first electrode is preferably formed to include the nickel equal to or greater than 0.1 atomic % and equal to or less than 4.0 atomic %. | 05-05-2011 |
20110101380 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE SAME - An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode. | 05-05-2011 |
20110121320 | WHITE ORGANIC LIGHT EMITTING DEVICE - A white organic light emitting device having a dual stack structure is disclosed, in which an electron transport layer adjacent to a blue light emitting layer includes an electron transport catalyst layer including metal to improve blue light emitting efficiency, and a greenish yellow dopant is used to improve white display efficiency, increase lifespan, and reduce power consumption. | 05-26-2011 |
20110121321 | SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING SUCH SEMICONDUCTOR LIGHT EMITTING DEVICE MEMBER - A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive. | 05-26-2011 |
20110133213 | GETTER COMPOSITION AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - A getter composition including a moisture absorbing material and a binder having a volatility of 400 ppm or less when heated to a temperature in the range of 60° C. to 120° C. for 2 hours and an organic light emitting diode device including the getter composition | 06-09-2011 |
20110140130 | Method for Forming a Thin-film Structure of a Light-Emitting Device via Nanoimprint - A method is disclosed for making a thin-film structure of a light-emitting device via nanoimprint. The method includes the steps of providing a light-emitting element, providing a film on the light-emitting element via spin coating precursor on the light-emitting element, forming a pattern on the film by nanoimprint; and curing the film. Thus, the precursor is transformed to the thin-film structure. | 06-16-2011 |
20110156059 | Light-Emitting Component and Method for The Production Thereof - The invention relates to a light-emitting component, in particular an organic luminescent diode, having an electrode and a counter electrode and an organic region arranged between the electrode and the counter electrode and having an organic light-emitting region. Furthermore, the invention relates to methods for the production of such a component. | 06-30-2011 |
20110163327 | DEVICE COMPRISING POSITIVE HOLE INJECTION TRANSPORT LAYER, METHOD FOR PRODUCING THE SAME AND INK FOR FORMING POSITIVE HOLE INJECTION TRANSPORT LAYER - A device capable of having an easy production process and achieving a long lifetime. The device has a substrate, two or more electrodes facing each other disposed on the substrate and a positive hole injection transport layer disposed between two electrodes among the two or more electrodes. The positive hole injection transport layer has a transition metal-containing nanoparticle containing at least a transition metal compound including a transition metal oxide, a transition metal and a protecting agent, or at least the transition metal compound including the transition metal oxide, and the protecting agent. | 07-07-2011 |
20110175112 | III-V LIGHT EMITTING DEVICE INCLUDING A LIGHT EXTRACTING STRUCTURE - Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer. | 07-21-2011 |
20110175113 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Provided is a semiconductor light emitting device having an improved electrode structure for uniform current density and high brightness. According to the present invention, an light emitting device can have an electrode structure configured to spread a current uniformly and efficiently throughout the entire area of the light emitting device. Therefore, current density distribution can be more uniform in the light emitting device. End parts of second conductive type auxiliary electrodes are gradually shortened in length in a direction away from a first conductive type electrode pad so that a current flowing around the first conductive type electrode can be uniform to increase optical conversion efficiency and lower a driving voltage. | 07-21-2011 |
20110186863 | Light Emitting Diode Having Improved Light Emission Efficiency and Method for Fabricating the Same - Provided is a light emitting diode (LED) having improved light emission efficiency, which can effectively overcome a technical limit of the related art by implementing a surface plasma resonance effect as well as reducing a layer defect such as threading dislocations in an LED structure. | 08-04-2011 |
20110193102 | ORGANIC LIGHT EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode device and a manufacturing method thereof. The organic light emitting diode device includes a substrate main body, a transparent electrode formed on the substrate main body, an organic emission layer formed on the transparent electrode, a cover electrode formed on the organic emission layer and made of a metal, and a sealant formed on the substrate main body to overlap an edge of the cover electrode and cover a side surface of the organic emission layer. | 08-11-2011 |
20110198618 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. The conductive support member includes a protrusion projecting from at least one edge. | 08-18-2011 |
20110204385 | Vapor Deposition of a Layer - A method of depositing a layer onto a substrate, comprising heating an evaporator to a temperature capable of completely evaporating the evaporant to be deposited, dispensing into the evaporator one or more quantized units of the evaporant where the evaporant is completely vaporized, providing an area vapor dispenser having a plurality of apertures, and directing the vaporized evaporant from the evaporator to the area vapor dispenser so that the evaporant is dispensed through the apertures to deposit the layer on the substrate. | 08-25-2011 |
20110210343 | SEMICONDUCTOR WAFER - A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer. | 09-01-2011 |
20110233564 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED chip includes a transparent substrate and a number of lighting structure units each including a p-type semiconductor and an n-type semiconductor and a recess extending from the p-type semiconductor to the n-type semiconductor. The recess is filled with metal material which covers the surface of the lighting structure units. By filling the recess with metal material, the heat generated by the lighting structure units can rapidly transfer to the metal material. A method for manufacturing the light emitting diode chip is also provided. | 09-29-2011 |
20110254021 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a transparent conductive layer, a second electrode and a metal grating. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The transparent conductive layer is located on a surface of the second semiconductor layer away from the substrate. The second electrode is electrically connected to the transparent conductive layer. The metal grating is located on a surface of the transparent conductive layer away from the substrate. The metal grating is a two-dimensional array of a plurality of metal micro-structures. | 10-20-2011 |
20110260176 | LIGHT-EMITTING SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting sensor device is provided with: a substrate ( | 10-27-2011 |
20110260177 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - Provided is a method for manufacturing a semiconductor light emitting element, which has a step wherein a substrate composed of a material different from that of a semiconductor layer is used and a III compound semiconductor layer is formed on the substrate, and can reduce the emission wavelength distribution (δ) of the obtained semiconductor light emitting layer. The method for manufacturing the semiconductor light emitting element having the III compound semiconductor layer is characterized in having: a compound semiconductor substrate forming step wherein at least one compound semiconductor layer is formed on the substrate and a compound semiconductor substrate having an amount of warpage (H) within the range of 50 μm≦H≦250 μm is formed; and a light emitting layer forming step wherein the light emitting layer composed of a plurality of III compound semiconductor layers is formed on the compound semiconductor substrate which has been formed. | 10-27-2011 |
20110272712 | Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same - Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. | 11-10-2011 |
20110297965 | LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a light-emitting device includes a semiconductor layer, first and second electrode portions, a first insulating film, and a metal layer. The semiconductor layer includes a first main surface, a second main surface on an opposite side to the first main surface, a third main surface connecting the first and second main surfaces, and a light-emitting layer. The first and second electrode portions are provided on the second main surface of the semiconductor layer. The first insulating film covers the second main surface of the semiconductor layer and the third main surface of the semiconductor layer. The metal layer is stacked on at least the second electrode portion of the first and the second electrode portions, and the metal layer extends until reaching a part of the first insulating film. The part is continuously extended from the first insulating film covering the third main surface. | 12-08-2011 |
20110297966 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are orderly stacked on the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer. The second semiconductor layer has a plurality of three-dimensional nano-structures. Each of the plurality of three-dimensional nano-structures has a stepped structure. | 12-08-2011 |
20110316004 | LIGHT EMITTING DEVICE - The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 μm or less. | 12-29-2011 |
20120037925 | Engineered Substrate for Light Emitting Diodes - A diode substrate including a crystalline aluminum oxide window, a silicon oxide layer on the crystalline aluminum oxide window, and a silicon layer on the silicon oxide layer, the silicon layer being implanted with ions at a predetermined depth. | 02-16-2012 |
20120056204 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device which includes a first TFT, a second TFT, a first pixel electrode, a second pixel electrode, an organic compound layer, a first opposing electrode and a second opposing electrode. The organic compound layer is formed on the first pixel electrode and the second pixel electrode. The first opposing electrode and a second opposing electrode are formed on the organic compound layer. When the first pixel electrode and the second opposing electrode are anodes, the second pixel electrode and the first opposing electrode are cathodes. When the first pixel electrode and the second opposing electrode are cathodes, the second pixel electrode and the first opposing electrode are anodes. | 03-08-2012 |
20120068196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF - A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity. | 03-22-2012 |
20120068197 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second organic compound has an electron transporting property, and a second layer including third and fourth organic compounds, the second layer being formed between the first layer and the second electrode wherein the third organic compound is capable of emitting a second light and has an electron trap property and the fourth organic compound has an electron transporting property. | 03-22-2012 |
20120074430 | Radiating substrate and method for manufacturing the radiating substrate, and luminous element package with the radiating substrate - Disclosed herein is a radiating substrate radiating heat generated from a predetermined heating element to the outside. The radiating substrate includes polymer resins and graphenes distributed in the polymer resins. | 03-29-2012 |
20120074431 | SAPPHIRE SUBSTRATE AND SEMICONDUCTOR - The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections. | 03-29-2012 |
20120097981 | LED CHIP - An LED (light emitting diode) chip includes a substrate, a first conduction layer formed on a top surface of the substrate, and a second conduction layer formed on the first conduction layer. The first conduction layer extends from a bottom surface of the second conduction layer to a circumferential surface of the second conduction layer, thereby surrounding the bottom surface and the circumferential surface of the second conduction layer. An active layer is sandwiched between the first and second conduction layers, to increase a contact area between the active later and the first conduction layer and the second conduction layer. | 04-26-2012 |
20120112210 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a substrate and a plurality of pixel rows. The pixel rows are arranged on the substrate. Each of the pixel rows includes a first sub-pixel row having a plurality of first sub-pixels, a second sub-pixel row having a plurality of second sub-pixels, and a third sub-pixel row having a plurality of third sub-pixels. In the m | 05-10-2012 |
20120112211 | SILICONE RESIN, SEALING MATERIAL, AND OPTICAL SEMICONDUCTOR DEVICE - A silicone resin is obtained by allowing a cage octasilsesquioxane having a group represented by formula (1) below, to react with
| 05-10-2012 |
20120119227 | METHOD FOR MANUFACTURING GALLIUM OXIDE BASED SUBSTRATE, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT EMITTING DEVICE - A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer. | 05-17-2012 |
20120126252 | PATTERNING THE EMISSION COLOUR IN TOP-EMISSIVE OLEDS - The invention relates to a top-emissive organic light-emitting diode (OLED) ( | 05-24-2012 |
20120126253 | PHOSPHOR BLEND FOR AN LED LIGHT SOURCE AND LED LIGHT SOURCE INCORPORATING SAME - There is provided a phosphor blend for an LED light source comprising from about 25 to about 35 weight percent of a cerium-activated yttrium aluminum garnet phosphor, from about 5 to about 10 weight percent of a europium-activated strontium calcium silicon nitride phosphor, and from about 50 to about 75 weight percent of a europium-activated calcium magnesium chlorosilicate phosphor. An LED light source in accordance with this invention has a B:G:R ratio for a 5500 K daylight balanced color film of X:Y:Z when directly exposed through a nominal photographic lens, wherein X, Y and Z each have a value from 0.90 to 1.10. | 05-24-2012 |
20120132929 | PHOSPHOR BLEND FOR AN LED LIGHT SOURCE AND LED LIGHT SOURCE INCORPORATING SAME - A phosphor blend for an LED light source is provided wherein the phosphor blend comprises from about 7 to about 12 weight percent of a cerium-activated yttrium aluminum garnet phosphor, from about 3 to about 6 weight percent of a europium-activated strontium calcium silicon nitride phosphor, from about 15 to about 20 weight percent of a europium-activated calcium silicon nitride phosphor, and from about 55 to about 80 weight percent of a europium-activated calcium magnesium chlorosilicate phosphor. An LED light source in accordance with this invention has a B:G:R ratio for a 3200 K tungsten balanced color film of X:Y:Z when directly exposed through a nominal photographic lens, wherein X, Y and Z each have a value from 0.90 to 1.10. | 05-31-2012 |
20120153304 | SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING - Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding. | 06-21-2012 |
20120153305 | Radiation Emitting Device - A radiation emitting device comprising a first electrode, which emits first charge carriers having a first charge during operation, a first charge carrier transporting layer, which comprises a fluorescent substance, a second charge carrier transporting layer, which contains a phosphorescent substance, and a second electrode, which emits second charge carriers having a second charge during operation, wherein during operation the second charge carrier transporting layer is largely free of first charge carriers. | 06-21-2012 |
20120161160 | Self Light-Emitting Device - To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer ( | 06-28-2012 |
20120187422 | SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR SEMICONDUCTOR GROWTH, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, LIGHT-EMITTING ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR CELL ELEMENT, AND ELECTRONIC DEVICE - A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer. | 07-26-2012 |
20120187423 | LIGHT EMITTING DIODE DEVICE - A manufacturing method of an LED device includes the following steps. First, a substrate and at least one LED disposed on the substrate are provided. Next, a porous material layer having a plurality of pores is formed on a surface of the LED. Finally, a plurality of nanocrystals are formed in the pores to construct a phosphor layer on the surface of the LED. | 07-26-2012 |
20120193645 | Radiation Emitting Device - A radiation-emitting device having an organic radiation-emitting functional layer and a radiation decoupling layer. The organic radiation-emitting functional layer emits a primary radiation; the radiation decoupling layer is disposed in the beam path of the primary radiation. On the side remote from the radiation-emitting functional layer the radiation decoupling layer comprises a microstructure having regularly disposed geometric structural elements; at least partial regions of the radiation decoupling layer contain regions which effect scattering of the primary radiation. | 08-02-2012 |
20120193646 | METHOD OF MANUFACTURING AN ORGANIC LIGHT EMITTING DIODE BY LIFT-OFF - A method of manufacturing an Organic Light Emitting Diode (OLED). The method comprises using a solution or a solvent for removing a photo-resist used for patterning, which photo-resist is at least partly covered with a material other than photo-resist. The method of manufacturing the OLED thus comprises a lift-off process. The new method provides the benefits of low cost manufacturing and high OLED performance. | 08-02-2012 |
20120205671 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. | 08-16-2012 |
20120211771 | LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD - An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein. | 08-23-2012 |
20120223341 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, DISPLAY, AND ELECTRONIC DEVICE - A light emitting element has an anode, a cathode, a light emitting layer which is provided between the anode and the cathode and emits light by energizing the anode and the cathode, and a functional layer (a hole injecting layer and a hole transporting layer) which is provided between the anode and the light emitting layer in contact therewith and has a function of transporting a hole, in which the hole injecting layer and the hole transporting layer each are constituted including an electron transporting material having electron transporting properties. The content of the electron transporting material contained in the hole injecting layer and the content thereof contained in the hole transporting layer are different from each other. | 09-06-2012 |
20120228641 | PROTECTIVE SUBSTRATE FOR A DEVICE THAT COLLECTS OR EMITS RADIATION - This substrate ( | 09-13-2012 |
20120228642 | METHOD OF TREATING AN OXIDIZED LAYER OF METAL NITRIDE - The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer ( | 09-13-2012 |
20120228643 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride. | 09-13-2012 |
20120228644 | Encapsulation of Organic Devices - Presented an organic light-emitting device (OLED) that includes at least one active region, at least one organic layer, a first glass plate on which the at least one active region is applied, and a second glass plate. The active region is disposed between the first and the second glass plates. The first and second glass plates are at least partially transparent in the near infrared spectral range. The OLED further includes a bonding material that includes a solder glass and is disposed between the first and second glass plates. The bonding material forms at least one frame that surrounds the active region and mechanically connects the first glass plate with the second glass plate and seals the active region. The bonding material absorbs near infrared radiation. The OLED further includes spacer particles that have a mean diameter that maintains a height between the first and second glass plates. | 09-13-2012 |
20120235166 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE - An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number of two or more) EL layers are provided, where between a first EL layer and a second EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a material having a high electron-transporting property in contact with the first layer, and a region containing a material having a high hole-transporting property and an acceptor material in contact with the second layer are provided in this order from the anode side. | 09-20-2012 |
20120248464 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND HEAD MOUNT DISPLAY DEVICE - A semiconductor light emitting device includes a thin-film semiconductor light emitting element, a substrate, a first insulation layer having a surface to which the thin-film semiconductor light emitting element is bonded, a first metal layer composed of aluminum and disposed on a side of the first insulation layer facing the substrate, and a second insulation layer disposed between the first insulation layer and the first metal layer. | 10-04-2012 |
20120256197 | ORGANIC ELECTROLUMINESCENCE ELEMENT - The organic electroluminescence device includes an anode, a cathode, a first electron injection layer, an electron transport layer, and a light emitting layer. The first electron injection layer is made of alkali metal and is formed between the anode and the cathode. The electron transport layer is formed between the first electron injection layer and the anode. The light emitting layer is formed between the electron transport layer and the anode. The organic electroluminescence element further includes a second electron injection layer. The second electron injection layer is formed between the first electron injection layer and the electron transport layer. The second electron injection layer is made of amorphous inorganic material. | 10-11-2012 |
20120261678 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING CHIP AND SEMICONDUCTOR LIGHT-EMITTING CHIP - In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step | 10-18-2012 |
20120261679 | LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A light-emitting device and a method of fabricating the same, in which the light emission characteristics of the light-emitting device in the UV range are maximized such that a high-efficiency light-emitting device can be produced at low cost. For this, the method includes the step of forming a zinc oxide light-emitting layer on a base substrate, the zinc oxide light-emitting layer including zinc oxide doped with a dopant; and activating the dopant by rapidly heat-treating the zinc oxide light-emitting layer, so that light emission in an ultraviolet range is increased. | 10-18-2012 |
20120273804 | Light-Emitting Device and Manufacturing Method Thereof - When a hollow structure in which a light-emitting element is provided between a pair of substrates is used in order to prevent oxygen or moisture from reaching the light-emitting element, light leakage to an adjacent pixel easily occurs as compared to a structure in which a space between a pair of substrates is filled with a resin such as an adhesive. In order to reduce light leakage to an adjacent pixel in the hollow structure, a light-blocking spacer is formed over a partition to keep the distance between the pair of substrates uniform. The cross-sectional shape of the light-blocking spacer is a trapezoid having a lower side shorter than an upper side. | 11-01-2012 |
20120273805 | METHOD FOR PRODUCING SILICON LAYERS - The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula Si | 11-01-2012 |
20120299015 | NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE - According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees. | 11-29-2012 |
20120299016 | ORGANIC LAYER DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE ORGANIC LAYER DEPOSITION APPARATUS - An organic layer deposition apparatus capable of protecting or preventing a patterning slit sheet from sagging, and a method of manufacturing an organic light-emitting display device by using the organic layer deposition apparatus. | 11-29-2012 |
20120319138 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface and a second surface opposite to each other, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first region is provided from a position away from the first surface by a first distance. The first regions and the second regions are alternately arranged. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer. | 12-20-2012 |
20120319139 | ORGANIC ELECTROLUMINESCENT MEMBER AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescent member comprising: a positive electrode and a negative electrode on a substrate; multiple organic layers which include at least a positive hole transport layer, a light-emitting layer and an electron transport layer, and which are arranged between the positive electrode and the negative electrode; and an electron injection layer arranged between the electron transport layer and the negative electrode. The electron injection layer is formed from at least one selected from the group consisting of alkali metals and compounds containing alkali metals having melting point of less than 90° C., and at least one selected from the group consisting of alkali metals, alkaline earth metals, compounds containing alkali metals, and compounds containing | 12-20-2012 |
20120326169 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, LAMP, ELECTRONIC DEVICE AND MECHANICAL APPARATUS - Provided is a method for manufacturing a semiconductor light emitting element ( | 12-27-2012 |
20130001594 | Electronic Device - A method of making an electronic device comprising a double bank well-defining structure, which method comprises: providing an electronic substrate; depositing a first insulating material on the substrate to form a first insulating layer; depositing a second insulating material on the first insulating layer to form a second insulating layer; removing a portion of the second insulating layer to expose a portion of the first insulating layer and form a second well-defining bank; depositing a resist on the second insulating layer and on a portion of the exposed first insulating layer; removing the portion of the first insulating layer not covered by the resist, to expose a portion of the electronic substrate and form a first well-defining bank within the second well-defining bank; and removing the resist. The method can provide devices with reduced leakage currents. | 01-03-2013 |
20130001595 | METHOD OF MANUFACTURING AN OLED DEVICE WITH SPATIALLY ISOLATED LIGHT-EMITTING AREAS - The invention describes a method of forming spatially isolated light- emitting areas (R | 01-03-2013 |
20130009172 | METHOD OF MANUFACTURE OF LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT MANUFACTURED THEREBY - An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique. Furthermore, another object of the invention is to provide a highly reliable light-emitting element that is manufactured by the method of the present invention. The above-described objects are accomplished by applying a thermally decomposable resin composition as a fixing resin layer that fixes the semiconductor layer to a supporting base, and by thermally decomposing the fixing resin layer at the time of peeling off the semiconductor layer from the supporting base. | 01-10-2013 |
20130015470 | SEMICONDUCTOR LIGHT EMITTING ELEMENTAANM Tanaka; HidetoshiAACI Anan-shiAACO JPAAGP Tanaka; Hidetoshi Anan-shi JPAANM Takeda; MitsumasaAACI Anan-shiAACO JPAAGP Takeda; Mitsumasa Anan-shi JP - A semiconductor light emitting device in which adhesion between an insulating layer and a semiconductor layer is improved while maintaining the ability of the insulating layer to limit the direction of current flow. | 01-17-2013 |
20130026498 | SUBSTRATE ASSEMBLY FOR CRYSTAL GROWTH AND FABRICATING METHOD FOR LIGHT EMITTING DEVICE USING THE SAME - A substrate assembly on which a first conduction-type semiconductor layer, an active layer and a second conduction-type semiconductor layer are formed is disclosed, the substrate assembly comprising a first substrate, a second substrate and a bonding layer interposed there between. In the substrate assembly, the thermal expansion coefficient of the bonding layer is smaller than or equal to that of at least one of the first and second substrates. | 01-31-2013 |
20130037825 | SEMICONDUCTOR LIGHT EMITTING CHIP AND METHOD FOR PROCESSING SUBSTRATE - Disclosed is a semiconductor light emitting chip ( | 02-14-2013 |
20130049015 | LEDS AND METHODS FOR MANUFACTURING THE SAME - A light emitting diode (LED) is disclosed. The LED includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a patterned structure. The first semiconductor layer having first and second regions is positioned on the substrate, wherein the first region is thicker than the second region. The active layer is positioned on the first region of the first semiconductor layer. The second semiconductor layer is positioned on the active layer, wherein the first and second semiconductor layers have opposite conductivities. The patterned structure is formed on a sidewall of the first region of the first semiconductor layer or on a sidewall of the second semiconductor layer. | 02-28-2013 |
20130099254 | LIGHT EMITTING DIODE WITH CHAMFERED TOP PERIPHERAL EDGE - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light emitting structure is a rounded top peripheral edge or a beveled top peripheral edge. A top surface of the substrate surrounding the light emitting structure is exposed to air and formed with micro-structures. | 04-25-2013 |
20130099255 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE THIN FILM, AND FABRICATION METHOD THEREOF - There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction. | 04-25-2013 |
20130105821 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME | 05-02-2013 |
20130112998 | SOLID STATE LIGHT EMITTING SEMICONDUCTOR DEVICE - A solid state light emitting semiconductor device including a substrate, a mesa epitaxy stacking structure, an insulating layer, a first type electrode and a second type electrode is provided. The mesa epitaxy stacking structure includes a first type semiconductor layer, an active layer and a second type semiconductor layer arranged in order. A concave area is formed in the middle of the mesa epitaxy stacking structure to expose a portion of the first type semiconductor layer. The insulating layer covers the exposed surface of the first type semiconductor layer around the mesa epitaxy structure, sidewalls of the mesa epitaxy stacking structure and a portion of surface of the second type semiconductor layer. The first type electrode is located on the exposed first type semiconductor layer in the concave area, and is surrounded by the second type electrode located on the insulating layer around the mesa epitaxy stacking structure. | 05-09-2013 |
20130119408 | Display Device and Method for Fabricating the Same - An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder | 05-16-2013 |
20130126912 | Light Emitting Device and Method of Driving the Light Emitting Device - A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method. | 05-23-2013 |
20130161652 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) includes a substrate, a buffer layer and an epitaxial structure. The substrate has a first surface with a patterning structure formed thereon. The patterning structure includes a plurality of projections. The buffer layer is arranged on the first surface of the substrate. The epitaxial structure is arranged on the buffer layer. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer arranged on the buffer layer in sequence. The first semiconductor layer has a second surface attached to the active layer. A distance between a peak of each the projections and the second surface of the first semiconductor layer is ranged from 0.5 μm to 2.5 μm. | 06-27-2013 |
20130168702 | Method For Preparing a GaAS Substrate For A Ferromagnetic Semiconductor, Method for Manufacturing One Such Semiconductor, Resulting Substrate and Semiconductor, And Uses Of Said Semiconductor - A method is provided for preparing a surface of a GaAs substrate (001) such that it can receive a ferromagnetic semiconductor deposited by epitaxy, as well as a substrate thus prepared, method for manufacturing one such semiconductor deposited on the substrate, the resulting semiconductor, and uses thereof. The preparation method renders the surface capable of receiving an epitaxially deposited ferromagnetic semiconductor which may include semiconductors from groups III-V, IV and II-VI of the periodic table, with the exception of GaAs, and which also includes at least one magnetic element of manganese, iron, cobalt, nickel and chromium. The method includes vacuum deoxidation of the surface under a reduced germanium-based flux such that, following desorption of the arsenic and gallium oxide from the said surface, the latter has a single-domain 2×1 reconstruction and is sufficiently planar and arsenic-depleted to prevent any diffusion of arsenic from the substrate to the subsequently deposited semiconductor. | 07-04-2013 |
20130193450 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME - An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure. | 08-01-2013 |
20130214292 | SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - A manufacturing method of a semiconductor element which can improve productivity and reliability, comprises a step of forming a device structure layer including a semiconductor layer on a first substrate; a step of forming a first metal layer on the device structure layer; a step of forming a second metal layer made of the same material as the first metal layer on a second substrate; a first treatment step of heating and compressing together the first metal layer and the second metal layer placed opposite to each other, thereby bonding them with maintaining a junction interface between the first and second metal layers; and a second treatment step of heating the first and second metal layers to make the junction interface disappear. Either one of the first and second metal layers has a coarse surface having multiple pyramid-shaped protrusions formed at its surface. | 08-22-2013 |
20130221378 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - An LED manufacturing method includes the steps of forming a first insulator film on a semiconductor layer, forming a laminated body including a mask layer and an electrode on the first insulator film, forming a second insulator film to cover the laminated body and a first region of the first insulator film where a laminated body is not formed, anisotropic etching the second insulator film to expose the top surface of the mask layer and a second region of the first insulator film, exposing the surface of a semiconductor layer by removing the first insulator film while keeping the first insulator film between the laminated body and the semiconductor layer, removing the mask layer, and forming a clear conducting layer on top of the exposed surface of the semiconductor layer and the electrode. | 08-29-2013 |
20130228798 | LIGHT-EMITTING DIODE CHIP AND METHOD FOR PRODUCING THE SAME - A light-emitting diode chip is specified, comprising
| 09-05-2013 |
20130228799 | METHOD FOR PRODUCING A SILICONE FOIL, SILICONE FOIL AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING A SILICONE FOIL - A method of producing a silicone foil for use in an optoelectronic semiconductor component by molding including introducing a mold foil into a mold, introducing a carrier foil into the mold, wherein the carrier foil is fitted on a substrate foil and the substrate foil projects laterally beyond the carrier foil at least in places within a cavity of the mold, providing and applying a silicone base composition to the mold foil or to the carrier foil, molding the silicone base composition for the silicone foil in the mold between the mold foil and the carrier foil, wherein the silicone base composition is brought into contact with the substrate foil in at least one overlap region laterally alongside the carrier foil, removing the mold foil from the silicone foil, and separating the overlap region. | 09-05-2013 |
20130234166 | METHOD OF MAKING A LIGHT-EMITTING DEVICE AND THE LIGHT-EMITTING DEVICE - This disclosure discloses a method of making a light-emitting device. The method comprises: providing a light-emitting wafer having an orientation flat portion and comprises a substrate and a light-emitting stack formed on the substrate; forming a first line along a direction which is neither parallel nor perpendicular to the orientation flat portion; forming a second line intersecting with the first scribe line; and separating the light-emitting wafer along the first and second lines to form a plurality of light-emitting chips. | 09-12-2013 |
20130256702 | LIGHT EMITTING DIODE WITH HIGH LIGHT EXTRACTION EFFICIENCY AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a light emitting structure, a transparent conductive layer and a transparent protecting layer formed in sequence. A plurality of holes are defined in the transparent protecting layer to expose the transparent conductive layer out of the transparent protecting layer. A plurality of micro-structures are formed on a top surface of the transparent conductive layer in the holes. The micro-structures refract light emitted from the light emitting structure and travelling through the transparent conductive layer. | 10-03-2013 |
20130285073 | LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface. | 10-31-2013 |
20130285074 | LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer. | 10-31-2013 |
20130299850 | ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, METHOD FOR INSPECTING THE ACTIVE MATRIX SUBSTRATE, AND METHOD FOR INSPECTING THE DISPLAY DEVICE - An active matrix substrate ( | 11-14-2013 |
20130306993 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions. | 11-21-2013 |
20130313578 | METHOD OF DRIVING A LIGHT EMITTING DEVICE - The present invention is characterized in that a transistor with its L/W set to 10 or larger is employed, and that |V | 11-28-2013 |
20130320358 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device is manufactured by forming at least one epitaxial structure over a substrate. A portion of the substrate is cut and lifted to expose a partial surface of the epitaxial structure. A first electrode is then formed on the exposed partial surface to result in a vertical semiconductor device. | 12-05-2013 |
20130328066 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring. | 12-12-2013 |
20130334543 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a display panel, a gate driver, and a data driver. The display panel includes a display area in which an image is displayed and a non-display area disposed adjacent to the display area. The display panel includes an insulating substrate which has a groove. The gate driver is disposed to overlap with the display area when viewed in a plan view. At least part of the gate driver is formed on the groove. | 12-19-2013 |
20140008668 | LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to a backplane substrate provided with a transistor and a light-emitting element. The backplane substrate includes a separation layer and a buffer layer. A first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer. A flexible third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation. The support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer. | 01-09-2014 |
20140014974 | LIGHT-EMITTING DEVICE HAVING PATTERNED SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A light-emitting device disclosed herein comprises a patterned substrate having a plurality of cones, wherein a space is between two adjacent cones. A light-emitting stack formed on the cones. Furthermore, the cones comprise an area ratio of a top area of the cone and a bottom area of the cone which is less than 0.0064. | 01-16-2014 |
20140014975 | SEMICONDUCTOR CHIP INCLUDING HEAT RADIATION MEMBER, AND DISPLAY MODULE - A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate. | 01-16-2014 |
20140014976 | OPTICAL DEVICE AND PROCESSING METHOD OF THE SAME - An optical device including: a rectangular front side having a light-emitting layer; a rectangular rear side parallel to the front side; and first to fourth lateral sides adapted to connect the front and rear sides, in which the first lateral side is inclined by a first angle with respect to a perpendicular of the front side, and the second lateral side opposed to the first lateral side is inclined by a second angle with respect to the perpendicular, and the third lateral side is inclined by a third angle with respect to the perpendicular, and the fourth lateral side opposed to the third lateral side is inclined by a fourth angle with respect to the perpendicular. | 01-16-2014 |
20140014977 | OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE - An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element. | 01-16-2014 |
20140027789 | POWER LIGHT EMITTING DIODE AND METHOD WITH UNIFORM CURRENT DENSITY OPERATION - A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension. | 01-30-2014 |
20140054613 | Light-Emitting Transistors with Improved Performance - Disclosed are light-emitting transistors having novel structures that can lead to enhanced device brightness, specifically, via incorporation of additional electrically insulating components that can favor charge localization and in turn, carrier recombination and exciton formation. | 02-27-2014 |
20140061676 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND COMPONENT PRODUCED IN SUCH MANNER - A method of producing an optoelectronic component includes providing a semiconductor chip having an active layer that generates radiation and is arranged on a carrier, applying a dispersed material including a matrix material and particles embedded therein to the semiconductor chip and/or the carrier at least in regions, wherein before the dispersed material is applied, at least one chip edge of the semiconductor chip facing away from the carrier is modified such that the dispersed material at least partly separates into its constituents during application at the chip edge. | 03-06-2014 |
20140124796 | FLEXIBLE LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING FLEXIBLE-LIGHT EMITTING DEVICE - It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided. | 05-08-2014 |
20140138711 | Light-Emitting Device, Lighting Device, and Electronic Device - It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained. | 05-22-2014 |
20140138712 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device is provided, including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a plurality of electrodes. The first semiconductor layer has a step-down region such that one of the plurality of electrodes is placed on the first semiconductor layer. The light emitting device includes a substrate including a first portion having a flat top surface, a second portion having a flat bottom surface and disposed under the first portion, and a side portion disposed between the first portion and the second portion. An area of the flat top surface of the first portion is larger than an area of the flat bottom surface of the second portion. | 05-22-2014 |
20140151720 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device adapted for being disposed on a substrate is provided. The semiconductor device includes a pixel electrode, a drain, a semiconductor channel layer, a source, a gate insulation layer and a side-gate. The pixel electrode is disposed on the substrate. The drain is disposed on the pixel electrode and exposes a portion of pixel electrode. The semiconductor channel layer is disposed on the drain. The source is disposed on the semiconductor channel layer. The gate insulation layer is disposed on the substrate, at least covers the source and surrounds the semiconductor channel layer. The side-gate is disposed on the gate insulation layer and extendedly covers the substrate along at least one side of the gate insulation layer. An extending direction of a portion of the side-gate is identical to a stacking direction of the drain, the semiconductor channel layer and the source. | 06-05-2014 |
20140159059 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display substrate includes forming a gate insulation layer on the base substrate on which a gate metal pattern, forming a data metal pattern on the gate insulation layer, sequentially forming a insulation layer and an organic layer on the base substrate on which the data metal pattern is formed, partially exposing the organic layer, developing the organic layer to partially remove the organic layer on the data metal pattern and to expose at least a portion of the protecting layer on the gate metal pattern, forming a common electrode on the organic layer, forming a pixel electrode on the on the organic layer, and forming an insulation layer between the pixel electrode and the common electrode. An etching degree of a data metal may be controlled by controlling a thickness of a remained organic layer to reduce a damage of the data metal. | 06-12-2014 |
20140159060 | PATTERNED SUBSTRATE AND ELECTRO-OPTICAL SEMICONDUCTOR ELEMENT - A patterned substrate includes a substrate body and a plurality of solid patterns. The solid patterns are set on the substrate body, and at least partial pitches between the solid patterns are different. | 06-12-2014 |
20140159061 | PROTECTION ELEMENT AND LIGHT EMITTING DEVICE USING SAME - A protective element includes a semiconductor substrate, connecting electrodes, bottom electrodes, and a protection circuit. The connecting electrodes are provided on a mount surface of the semiconductor substrate on which a light-emitting element for flip-chip mounting is mounted so as to be each connected to an electrode of the light-emitting element. The protection circuit is provided in the semiconductor substrate so as to be connected through the connecting electrodes to the light-emitting element. The bottom electrodes are provided on a surface of the semiconductor substrate opposite to the mount surface, are each connected to a corresponding one of the connecting electrodes, and are configured so as to be each connected to an electrode on the mounting base. | 06-12-2014 |
20140183564 | LIGHT EMITTING ELEMENT - A light emitting element includes a first conductivity-type semiconductor layer, a first electrode, a second conductivity-type semiconductor layer and a second electrode. The second conductivity-type semiconductor layer has a square peripheral shape. The first electrode includes a first connecting portion on a first diagonal line and a first extending portion extending from the first connecting portion onto the first diagonal line. The second electrode includes a second connecting portion on the first diagonal line facing the first connecting portion via the first extending portion. Two second extending portions extend from the second connecting portion and having a first portion and a second portion respectively. The first connecting portion includes an end portion closer to the second connecting portion than a straight line intersecting the tip ends of the two second extending portions, and a center portion at a side father from the second connecting portion than the second diagonal line. | 07-03-2014 |
20140191252 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE, OPTICAL APPARATUS INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate. | 07-10-2014 |
20140197423 | SUBSTRATE STRUCTURE FOR MANUFACTURING LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - The invention provides a substrate structure for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure comprises a substrate having a first surface and a second surface opposite to the first surface; and a plurality of grooving structure formed on the first surface of the substrate. In which, the light-emitting diode is formed on the first surface of the substrate. | 07-17-2014 |
20140231831 | LED CHIP AND METHOD FOR MANUFACTURING THE SAME - The invention provides a substrate structure used for manufacturing a light-emitting diode and a method for manufacturing the light-emitting diode. The substrate structure includes a substrate having a first surface and a second surface opposite to the first surface and a plurality of grooving structure formed on the first surface of the substrate. The light-emitting diode is formed on the first surface of the substrate. | 08-21-2014 |
20140246683 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 09-04-2014 |
20140264388 | LOW CARBON GROUP-III NITRIDE CRYSTALS - The present disclosure generally relates to systems and methods for producing and using Group-III nitride crystals that have enhanced or increase ultraviolet transparency in a range of wavelengths. The crystals may also be used in a number of UV optics and UV optical semiconductor devices. | 09-18-2014 |
20140264389 | LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode (LED) structure including a substrate, a polymer layer, and an epitaxy layer is provided. The polymer layer is disposed on the substrate, wherein the polymer layer has a chemical formula of: | 09-18-2014 |
20140264390 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer. | 09-18-2014 |
20140264391 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film. | 09-18-2014 |
20140299892 | OPTOELECTRONIC SEMICONDUCTOR STRUCTURE AND METHOD FOR TRANSPORTING CHARGE CARRIERS - An optoelectronic semiconductor structure ( | 10-09-2014 |
20140306240 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode package includes a substrate, a first electrode and a second electrode embedded in the substrate, and a light emitting chip fixed onto the first electrode by first glue. The first electrode has a first barrier member at a periphery of the first glue and below the light emitting chip. The first barrier member obstructs the first glue from spreading toward a side of the first barrier member away from the first glue and the light emitting chip, whereby a contamination by the first glue to an area of the top surface beside the side of the first barrier of the first electrode away from the first glue and the light emitting chip is prevented. | 10-16-2014 |
20140306241 | Light-Emitting Device - In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions are different from each other and do not have rotational symmetry. Irregularity of the surface shape of the reflective electrode is increased, which inhibits interference of light reflected by the reflective electrode. To form the plurality of depressions in the surface of the reflective electrode, for example, a surface of an insulating layer that is a base of the reflective electrode is made uneven. Reflecting the surface shape of the insulating layer, the reflective electrode has an uneven surface. | 10-16-2014 |
20140319546 | ELECTROLUMINESCENT DISPLAY PANEL AND METHOD OF FABRICATING THE SAME - An electroluminescent display panel and method of fabricating the same are provided. The electroluminescent display panel includes a first multiple-layered structural layer, a second multiple-layered structural layer, a passivation layer and a third patterned conductive layer. The first multiple-layered structural layer includes a first patterned conductive layer, a first patterned insulation layer and an oxide semiconductor layer, and the first patterned conductive layer, the first patterned insulation layer and the oxide semiconductor layer have substantially the same shape. The second multiple-layered structural layer includes a second patterned conductive layer. The passivation layer has a plurality of through holes. A portion of the through holes expose the top surface and the lateral surface of the oxide semiconductor layer and the lateral surface of the first patterned conductive layer. The third patterned conductive layer is in contact with the oxide semiconductor layer and the first patterned conductive layer via the through holes. | 10-30-2014 |
20140319547 | METHOD OF PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence. | 10-30-2014 |
20150021626 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a layered semiconductor body including an n-type layer, a light-emitting layer, and a p-type layer stacked in sequence; an n-side electrode formed on part of the n-type layer exposed in a via formed in the layered semiconductor body to be non-conductive with the light-emitting layer and the p-type layer; and a p-side electrode formed on the p-type layer. The n-side electrode has an annular shape on a principal surface of the n-type layer. | 01-22-2015 |
20150028356 | LIGHT EMITTING DIODE HAVING MULTI-JUNCTION STRUCTURE AND METHOD OF FABRICATING THE SAME - Disclosed herein is a light emitting diode having a multi-junction structure and a method of fabricating the same. In the light emitting diode, each light emitting structure has a column shape and includes two light emitting layers centered on a p-type semiconductor layer. In addition, a p-type electrode is formed on a side surface of the p-type semiconductor layer, and a p-type electrode is formed through formation and removal of a sacrificial layer. Through this process, the p-type electrode can be formed as a side electrode. | 01-29-2015 |
20150048385 | LIGHT EMITTING DIODE SUBSTRATE - A method of manufacturing a light emitting diode (LED) substrate includes following steps: providing a nano-patterned substrate, which has a plurality of convex portions and a plurality of first concave portions that are spaced apart from each other, wherein each first concave portion has a depth (d1); forming a plurality of protection structures to cover each convex portion, and exposing a bottom surface of each first concave portion; performing an anisotropic etching processing to etch the bottom surface of each first concave portion which is not covered by the protection structure so as to form a plurality of second concave portions having a depth (d2), and d2 is greater than d1. | 02-19-2015 |
20150060888 | METHOD AND APPARATUS FOR CREATING A W-MESA STREET - A method for fabricating an epitaxial structure includes providing a wafer comprising one or more epitaxial layers. The wafer is divided into dice where the area between the dice are called streets. Each street has a slot formed on either side of the street. The slots penetrate through the epitaxial layer but not the substrate leaving a portion of the epitaxial layer intact between the slots creating a “W” shaped cross section. A protective layer is then formed on the wafer. A laser may be used to singulate the wafer in to individual dice. The laser divides each street between the slots. The barrier walls of the epitaxial layers protect the individual dice from debris created by laser separation. | 03-05-2015 |
20150060889 | SEMICONDUCTOR DEVICE, DIE ATTACH MATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device ( | 03-05-2015 |
20150060890 | Light Emitting Device and Electronic Device - An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process. | 03-05-2015 |
20150069418 | METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME - The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness. | 03-12-2015 |
20150069419 | Semiconductor Light Emitting Element - A semiconductor light emitting element include a semiconductor layer in which a first semiconductor layer, a second semiconductor layer, and a light emitting layer that is disposed between the first semiconductor layer and the second semiconductor layer are disposed. The first semiconductor layer has a step portion protruding more outwards than the light emitting layer and the second semiconductor layer. A plurality of first recesses is formed on side surfaces of the semiconductor layer not including the light emitting layer along a deposition direction of the semiconductor layer and along a direction intersecting with the deposition direction of the semiconductor layer and a plurality of second recesses is found on side surfaces of the semiconductor layer including the light emitting layer along the deposition direction of the semiconductor layer and along the direction intersecting with the deposition direction of the semiconductor layer. | 03-12-2015 |
20150069420 | TENSILE SEPARATION OF A SEMICONDUCTING STACK - A stressor layer is applied to a semiconducting stack in order to separate the semiconducting stack at a predetermined depth. Tensile force is applied to the stressor layer, fracturing the semiconducting stack at the predetermined depth and allowing the resulting upper portion of the semiconducting stack to be used in manufacturing a semiconducting end-product (e.g., a light-emitting diode). The resulting lower portion of the semiconducting stack may be reused to grow a new semiconducting stack thereon. | 03-12-2015 |
20150084069 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light emitting unit, a first layer, a second layer, and a third layer. The light emitting unit is provided between the n-type and p-type semiconductor layers, and includes a first well layer including a nitride semiconductor. The first layer is provided between the first well layer and the p-type semiconductor layer, and includes Al | 03-26-2015 |
20150115290 | METHOD OF MANUFACTURING STRUCTURES OF LEDS OR SOLAR CELLS - The invention disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate. | 04-30-2015 |
20150144968 | METHOD OF STRESS INDUCED CLEAVING OF SEMICONDUCTOR DEVICES - A method of dicing semiconductor devices includes depositing a continuous first layer over the substrate, such that the first layer imparts a compressive stress to the substrate, and etching grooves in the first layer to increase local stress at the grooves compared to stress at the remainder of the first layer located over the substrate. The method also includes generating a pattern of defects in the substrate with a laser beam, such that a location of the defects in the pattern of defects substantially corresponds to a location of at least some of the grooves in the in the first layer, and applying pressure to the substrate to dice the substrate along the grooves. | 05-28-2015 |
20150311399 | FILM FORMING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND ILLUMINATING DEVICE - An object of the present invention is to provide a film formation technique having high productivity by realizing a foundation layer having excellent crystallinity with a small film thickness of about 2 μm. An embodiment of the present invention relates to a film forming method which includes the step of forming a buffer layer by sputtering on a sapphire substrate held by a substrate holder. The buffer layer includes an epitaxial film having a wurtzite structure prepared by adding at least one substance selected from the group consisting of C, Si, Ge, Mg, Zn, Mn, and Cr to Al | 10-29-2015 |
20150349201 | METHOD OF MANUFACTURING LIGHT EMITTING DEVICE PACKAGE - A method of manufacturing a light emitting device package includes forming on a growth substrate a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. First and second electrodes are formed on the light emitting structure to be connected to the first and second conductivity-type semiconductor layers, respectively. A first bonding layer is formed on the light emitting structure, and is polished A second bonding layer is formed on the polished first bonding layer, and a support substrate is bonded to the light emitting structure using the first and second bonding layers. | 12-03-2015 |
20150357513 | CONTACTS FOR AN N-TYPE GALLIUM AND NITROGEN SUBSTRATE FOR OPTICAL DEVICES - A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material. | 12-10-2015 |
20160027854 | THIN FILM TRANSISTOR AND DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor includes: a semiconductor layer on a base substrate, and having a source region, a drain region, and a channel region; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and overlapping the channel region; an interlayer insulating layer covering the gate electrode; a source electrode and a drain electrode on the interlayer insulating layer and respectively coupled to the source region and the drain region; and a temperature adjusting member configured to adjust a temperature of the channel region by heating the channel region. | 01-28-2016 |
20160064614 | LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF - A light emitting diode package includes a substrate, a light emitting diode mounted on the substrate by flip chip bonding and a protective layer. The light emitting diode includes an epitaxial layer, a first electrode and a second electrode on the epitaxial layer. The first electrode and the second electrode are spaced apart from each other. The first and second electrodes are embedded in the protective layer. This disclosure also relates to a method for manufacturing the light emitting diode package. | 03-03-2016 |
20160072020 | ILLUMINATION METHOD AND LIGHT-EMITTING DEVICE - To provide an illumination method and a light-emitting device which are capable of achieving, under an indoor illumination environment where illuminance is around 5000 lx or lower when performing detailed work and generally around 1500 lx or lower, a color appearance or an object appearance as perceived by a person, will be as natural, vivid, highly visible, and comfortable as though perceived outdoors in a high-illuminance environment, regardless of scores of various color rendition metric. Light emitted from the light-emitting device illuminates an object such that light measured at a position of the object satisfies specific requirements. A feature of the light-emitting device is that light emitted by the light-emitting device in a main radiant direction satisfies specific requirements. | 03-10-2016 |
20160149079 | PATTERN WAFER FOR LEDS, EPITAXIAL WAFER FOR LEDS AND METHOD OF MANUFACTURING THE EPITAXIAL WAFER FOR LEDS - A pattern wafer ( | 05-26-2016 |
20160163537 | SEMICONDUCTOR DEVICE INCLUDING h-BN INSULATING LAYER AND ITS MANUFACTURING METHOD - A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the insulating layer. The insulating layer has a lower insulating layer consisting of amorphous boron nitride, and an upper insulating layer provided on the lower insulating layer and including amorphous boron nitride and an hexagonal system boron nitride (h-BN) particles. | 06-09-2016 |
20160172539 | METHOD FOR SEPARATING EPITAXIAL LAYERS FROM GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME | 06-16-2016 |
20160190390 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion. | 06-30-2016 |
20160194531 | ADHESIVE AND LIGHT-EMITTING DEVICE | 07-07-2016 |
20180026161 | Light-emitting Component | 01-25-2018 |
20190148590 | LIGHTING DEVICE AND DISPLAY DEVICE | 05-16-2019 |
20220140013 | DISPLAY APPARATUS INCLUDING SUBSTRATE HOLE - Disclosed herein is an organic light emitting display apparatus. The organic light emitting display apparatus includes at least one thin film transistor and light emitting device on substrate, the light emitting device is apart from the substrate hole, and at least one isolation structure is disposed between the substrate hole and the light emitting device. Each thin film transistor includes source/drain electrodes, each light emitting device includes a first electrode, a light emitting layer, and a second electrode, the organic light emitting display apparatus includes a connection electrode connecting one of the source/drain electrodes of the thin film transistor to the first electrode of the light emitting device, and a planarization layer is disposed between the thin film transistor and the light emitting device. The isolation structure includes at least one undercut structure, and a height of each undercut structure is greater than a thickness of the light emitting layer. | 05-05-2022 |
20220140184 | DISPLAY PANEL AND DISPLAY DEVICE - Disclosed are a display panel and a display device. The display panel includes a first substrate and a light-emitting substrate disposed opposite to each other. The first substrate includes a first base and a baffle wall layer, the first base includes a display region, and the baffle wall layer is located on a side of the first substrate and in the display region. The light-emitting substrate includes a second base, a eutectic layer and multiple micro light-emitting diodes. The eutectic layer is located on a side of the second base close to the first substrate. The multiple micro light-emitting diodes are located on a side of the eutectic layer close to the first substrate. The eutectic layer includes a first eutectic layer subsection and a second eutectic layer subsection, the first eutectic layer subsection is electrically connected to multiple micro light-emitting diodes. | 05-05-2022 |
20220140185 | Electronic device and manufacturing method thereof - An electronic device is provided, the electronic device includes a driving substrate, the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, a plurality of disc-shaped light-emitting units, at least one disc-shaped light-emitting unit is disposed in at least one circular groove, and the at least one disc-shaped light-emitting unit includes an alignment element positioned on a top surface of the at least one disc-shaped light-emitting unit, a diameter of the at least one disc-shaped light-emitting unit is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the at least one disc-shaped light-emitting unit and the at least one rectangular groove satisfy the condition of (R+r)/2>(w | 05-05-2022 |
20220140189 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - A nitride semiconductor light emitting device includes: a semiconductor laminate having a first conductivity-type semiconductor layer and a lattice buffer layer in which InGaN layers and GaN layers are alternately stacked, the semiconductor laminate having a columnar body portion protruding through etching of a peripheral region, an insulating layer covering the semiconductor laminate and having an opening at an upper surface of the body portion, and a light emitting structure including a second conductivity-type semiconductor disposed on the upper surface the body portion and selectively grown in the lattice buffer layer to have a side surface inclined with respect to the upper surface of the body portion, an active layer covering the second conductive semiconductor layer, and a third conductivity-type semiconductor layer covering the active layer and contacting the insulating layer. | 05-05-2022 |
20220140191 | LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME - A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure. | 05-05-2022 |
20220140192 | LIGHT-EMITTING DIODE CHIP STRUCTURE - A light-emitting diode chip structure comprising a substrate; a metal contact layer disposed on the substrate; a light-emitting semiconductor layer disposed on the metal contact layer; an insulating protective layer covering the metal contact layer and the light-emitting diode semiconductor layer. The insulating protective layer includes a first opening that exposes the light-emitting semiconductor layer and a second opening that exposes the metal contact layer. The metal conductive layer with one end passing through the first opening to be electrically connected to the light-emitting semiconductor layer, and the other end of the metal conductive layer extended on the insulating protective layer. A first electrode pad and a second electrode pad are respectively located on lateral sides of the light-emitting semiconductor layer and respectively disposed on the metal conductive layer and passing through the second opening to be disposed on the metal contact layer. | 05-05-2022 |
20220140215 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS - In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side. | 05-05-2022 |
20220140216 | Method for Producing Optoelectronic Semiconductor Devices and Optoelectronic Semiconductor Device - In an embodiment a method for producing optoelectronic semiconductor devices includes providing at least one optoelectronic semiconductor chip with at least one contact side, generating at least one coating region and at least one protection region on the contact side or on at least one of the contact sides, applying at least one liquid coating material to the at least one contact side, wherein the at least one coating material wets the at least one coating region and does not wet the at least one protection region and solidifying the at least one coating material into at least one electrical contact structure on the at least one coating region such that the semiconductor chip is capable of being energized through the at least one contact structure. | 05-05-2022 |
20220140218 | ELECTRONIC DEVICE - An embodiment of the disclosure provides an electronic device including multiple units. Each unit in the units includes multiple primary bonding regions and at least one reserved bonding region. Each reserved bonding region is connected to the primary bonding regions. The number of the at least one reserved bonding region is less than the number of primary bonding regions. | 05-05-2022 |