Class / Patent application number | Description | Number of patent applications / Date published |
252519500 | Zinc compound | 47 |
20080224104 | Method for Preparation of Stable Metal Oxide Nanoparticles Suspensions - The invention relates to a method for the preparation of stable suspensions of metal oxide nanoparticles, in which uncharged metal oxide nanoparticles are first treated with a non-ionic surfactant in a polar organic solvent under certain conditions, and the suspension obtained is then treated with a charging solution. The suspensions of the invention can be used for preparation of high quality metal oxide films by electrophoresis deposition (EPD). | 09-18-2008 |
20090065746 | TRANSPARENT ELECTRICALLY CONDUCTIVE FILM AND METHOD FOR PRODUCTION THEREOF - The present invention provides a transparent electrically conductive film and a method for producing the same. The transparent electrically conductive film comprises Zn, Sn and O, wherein the molar ratio Zn/(Zn+Sn) of Zn to the sum of Zn and Sn is 0.41 to 0.55, and is amorphous. | 03-12-2009 |
20100155674 | TIN OXIDE-BASED ELECTRODE COMPOSITION - A tin oxide-based electrode formed from a composition including a majority component comprising tin-oxide (SnO | 06-24-2010 |
20100327238 | SINTERED BODY AND THERMOELECTRIC MATERIAL - Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component and the sintered body has a relative density of 90% or more and an average of the size of particles constituting the sintered body is 3 μm or less. | 12-30-2010 |
20110215282 | METHOD OF ADSORBING DYE TO METAL OXIDE PARTICLE BY USING SUPERCRITICAL FLUID - A method of adsorbing dye to a metal oxide particle by using a supercritical fluid, and a solar cell prepared using the method. | 09-08-2011 |
20120112138 | TRANSPARENT CONDUCTIVE FILM - A transparent conductive film which is an indium zinc oxide film comprising In | 05-10-2012 |
20120119166 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 05-17-2012 |
20120199798 | ELECTROPHORETIC FLUID - The present invention is directed to a display fluid comprising charged composite pigment particles dispersed in a solvent. The composite pigment particles have a density which matches to the density of the solvent in which they are dispersed. A display fluid comprising the composite pigment particles provides improved display performance. | 08-09-2012 |
20120313055 | METHOD OF MANUFACTURING TRANSPARENT CONDUCTIVE FILM, THE TRANSPARENT CONDUCTIVE FILM, ELEMENT AND TRANSPARENT CONDUCTIVE SUBSTRATE USING THE FILM, AS WELL AS DEVICE USING THE SUBSTRATE - By using a coating method, which is a simple method of manufacturing a transparent conductive film at low cost, a transparent conductive film formed with heating at a low temperature, in particular, lower than 300° C. with both of excellent transparency and conductivity and also with excellent film strength and a method of manufacturing this transparent conductive film are provided. | 12-13-2012 |
20130082219 | Method for Producing Highly Conformal Transparent Conducting Oxides - A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer. | 04-04-2013 |
20130181175 | LOW-TEMPERATURE CO-PRECIPITATION METHOD FOR FABRICATING TCO POWDERS - The present invention discloses a low-temperature co-precipitation method for fabricating TCO powders, which comprises steps: respectively dissolving two or more metals/metal salts in solvents to obtain metal ion solutions; mixing the metal ion solutions to form a precursor solution having a specified composition; enabling a co-precipitation reaction at a temperature lower than 45° C. via adding precipitant in two stages, controlling the temperature of precipitation reactions and undertaking aging processes; flushing, filtering, drying and calcining the precipitates to obtain TCO powders having a specified composition and improved quality. | 07-18-2013 |
20130200314 | ZINC OXIDE SINTERED COMPACT TABLET AND MANUFACTURING METHOD THEREOF - Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuKα radiation is taken to be I | 08-08-2013 |
20150076421 | FORMULATIONS COMPRISING AMMONIACAL HYDROXO-ZINC COMPOUNDS - The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3 | 03-19-2015 |
252519510 | Additional diverse metal containing | 25 |
20080197327 | Wide band gap semiconductor templates - The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition (“IBAD”) techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide (“MgO”) technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures. | 08-21-2008 |
20080272345 | Composite Ceramic Hollow Fibres Method for Production and Use Thereof - Composites comprising at least one hollow fibre of oxygen-transporting ceramic material, which is a ceramic material which conducts oxygen anions and electrons or a combination of ceramic material which conducts oxygen anions and a ceramic or nonceramic material which conducts electrons, with the outer surface of the hollow fibre being in contact with the outer surface of the same hollow fibre or another hollow fibre and the contact points being joined by sintering, are described. | 11-06-2008 |
20080283802 | Ceramic Target, Film Consisting of Zinc Oxide, Gallium and Boron, and Method for Preparing the Film - The present invention relates to the field of opto-electronic technology and is intended to create transparent conductive layers. More concretely, the invention relates to the field of production of ceramic materials and is intended for using in manufacturing the ceramic targets, which serve as a source of material for magnetron, electron-beam, ion-beam and other films application methods in micro-, opto-, nanoelectronics, as well as to films produced from such a ceramic target and to a method for preparing such films. Disclosed is a ceramic target on the basis of zinc oxide doped with gallium containing from 0.5 to 6 atomic % of gallium and from 0.1 to 2 atomic % of boron, a portion of gallium and boron being contained in zinc oxide crystallites as a substitution admixture, and the rest portion of gallium and boron being contained together with zinc in the amorphous intergranular phase. Also proposed is a polycrystalline film on the basis of zinc oxide with the preferred orientation (001) doped with gallium in the structure of which from 0.1 to 2% of zinc atoms are substituted by atoms of boron and from 0.5 to 6% of zinc atoms are substituted by atoms of gallium, as well as a method for preparing thereof. | 11-20-2008 |
20090057625 | TRANSPARENT CONDUCTOR - It is an object of the present invention to provide a transparent conductor exhibiting a small increase in resistance value even when used under high-humidity conditions over long periods of time. A transparent conductor in a preferred embodiment comprises indium tin oxide, an additive component having zinc oxide as a main component thereof, and a resin cured product, the content of the additive component being 0.1 to 50 wt % relative to the total amount of indium tin oxide and the additive component. | 03-05-2009 |
20090114886 | FIRED MATERIAL AND PROCESS FOR PRODUCING THE SAME - A fired material including at least one metal atom selected from indium, zinc and tin, at least one alkali metal atom selected from cesium, potassium and lithium, and an oxygen atom, wherein the atomic ratio (alkali metal atom)/(metal atom+alkali metal atom) is 0.1 to 80 at. %. | 05-07-2009 |
20090189126 | Glass Frits - Glass frits, conductive inks and articles having conductive inks applied thereto are described. According to one or more embodiments, glass frits with no intentionally added lead comprise TeO | 07-30-2009 |
20090200525 | Zinc Oxide Based Transparent Electric Conductor, Sputtering Target for Forming of the Conductor and Process for Producing the Target - Provided is a zinc oxide transparent electric conductor having zinc oxide (ZnO) as its principal component, containing an element to become an n-type dopant to zinc oxide, containing metal M in which P(P=(G+H mix)/RT, wherein G is the Gibbs free energy at temperature T of the metal, H mix is the mixing enthalpy at temperature T of zinc oxide and the metal, R is the gas constant, and T is the temperature) as a parameter showing the wettability with zinc oxide is 6 or less and in which its resistivity is smaller than the resistivity of zinc oxide added with the n-type dopant, and wherein concentration of metal M in relation to the total atomicity of zinc and the n-type dopant and metal M, which are all metal atoms configuring the zinc oxide transparent electric conductor, is 0.05 to 2.0 at %. In the development of a transparent electric conductor that does not contain raw material In which is expensive and with concern of resource depletion, provided is a low resistivity transparent electric conductor by exceeding the limits of the conventional development technique of the single dopant method, presenting guidelines for selecting a secondary additive material effective in achieving low resistivity, and indicating types of specific materials and the appropriate concentration range. | 08-13-2009 |
20090206303 | Gallium Oxide-Zinc Oxide Sputtering Target, Method for Forming Transparent Conductive Film, and Transparent Conductive Film - Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga | 08-20-2009 |
20090250668 | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, TARGET AND PRODUCTION METHOD FOR AMORPHOUS CONDUCTIVE FILM - An amorphous transparent conductive film containing as a main component a six oxygen-coordinated metal oxide, and satisfying, in a radial distribution function (RDF) obtained by an X-ray scattering measurement, a relationship of A/B>1, providing that the maximum value of RDF at an interatomic distance of from 0.30 nm to 0.36 nm is A and the maximum value of RDF at an interatomic distance of from 0.36 nm to 0.42 nm is B. | 10-08-2009 |
20090250669 | Gallium Oxide/Zinc Oxide Sputtering Target, Method of Forming Transparent Conductive Film and Transparent Conductive Film - Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga | 10-08-2009 |
20100072435 | PRODUCTION METHOD OF METAL OXIDE PRECURSOR LAYER, PRODUCTION METHOD OF METAL OXIDE LAYER, AND ELECTRONIC DEVICE - A production method of a metal oxide precursor layer provided with a substrate, a solution containing a metal ion as a metal oxide precursor, and a process to coat the solution while the temperature of the substrate is adjusted in the temperature range of 50%-150% of the boiling point (° C.) of a main solvent of the solution. | 03-25-2010 |
20100123103 | ZINC OXIDE BASED SPUTTERING TARGET, METHOD FOR MANUFACTURING ZINC OXIDE BASED SPUTTERING TARGET, ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, METHOD FOR MANUFACTURING ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, AND ELECTRONIC APPARATUS - A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using γ-Al | 05-20-2010 |
20110024700 | SINTERED COMPACT AND THERMOELECTRIC CONVERSION MATERIAL - Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component, further comprises an oxide A wherein the oxide A represents one or more members selected from among nickel oxides, copper oxide and zinc oxide, and has a relative density of 80% or more and 90% or less. | 02-03-2011 |
20110079755 | HIGH FIELD STRENGTH VARISTOR MATERIAL - The present invention relates to a varistor material for a surge arrester with target switching field strength ranging from 250 to 400 V/mm comprising ZnO forming a ZnO phase and Bi expressed as Bi | 04-07-2011 |
20110121244 | SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE - A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound. | 05-26-2011 |
20110227007 | METHOD OF MANUFACTURING QUANTUM DOT - A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200° C. to about 350° C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200° C. to about 350° C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200° C. to about 350° C. to form a quantum dot. | 09-22-2011 |
20110240934 | Oxide sintered body, manufacturing method therefor, manufacturing method for transparent conductive film using the same, and resultant transparent conductive film - An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours. | 10-06-2011 |
20110240935 | SINTERED COMPLEX OXIDE AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In | 10-06-2011 |
20110260121 | COMPOSITE OXIDE SINTERED BODY AND SPUTTERING TARGET COMPRISING SAME - A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10 μm or more being 2.5 or less per mm | 10-27-2011 |
20120068130 | Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method - A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably. | 03-22-2012 |
20130234081 | OXIDE SINTERED COMPACT AND SPUTTERING TARGET - This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn | 09-12-2013 |
20140145124 | IN-GA-ZN OXIDE SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - A sputtering target including an oxide A and InGaZnO | 05-29-2014 |
20150034885 | METHOD FOR PRODUCING METAL OXIDE FILM AND METAL OXIDE FILM - In a method for producing a metal oxide film according to the present invention, a solution containing zinc is sprayed onto a substrate placed under non-vacuum, and then, a dopant solution containing a dopant is sprayed onto the substrate. After that, a deposited metal oxide film is subjected to a resistance reducing treatment. A molar concentration of the dopant supplied to the substrate with respect to a molar concentration of the zinc supplied to the substrate is not less than a predetermined value. | 02-05-2015 |
20150354053 | SPUTTERING TARGET - A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In | 12-10-2015 |
20160251264 | OXIDE SINTERED BODY AND METHOD FOR MANUFACTURING THE SAME, SPUTTERING TARGET, AND SEMICONDUCTOR DEVICE | 09-01-2016 |
252519520 | With boron compound | 5 |
20110006271 | DIELECTRIC COMPOSITION WITH REDUCED RESISTANCE - This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission. | 01-13-2011 |
20130099181 | CONDUCTIVE PASTE COMPOSITION FOR SOLAR CELL - A conductive paste composition for a solar cell includes a conductive powder, a glass frit, and a vehicle, the glass frit consisting of glass containing 0.6 to 18.0 (mol %) Li | 04-25-2013 |
20130119326 | Low-Melting-Point Glass Composition and Conductive Paste Material Using Same - [Task] To provide a low-melting point glass composition for a lead-free conductive paste material with which a high collection efficiency can be obtained in a conductive paste for a crystalline Si solar battery. | 05-16-2013 |
20140361229 | VOLTAGE NONLINEAR RESISTOR - The present invention provides a voltage nonlinear resistor containing zinc oxide as a major component, wherein the degree of orientation f(100) of the (100) plane of zinc oxide is 0.40 or lure and is represented by the following equation: f(100)=I(100)/(I(100)+I(002)+I(101)), where I(hkl) represents the peak intensity (integral) of a (hkl) plane. | 12-11-2014 |
20150076422 | METHOD FOR PRODUCING METAL OXIDE FILM AND METAL OXIDE FILM - In the method for producing a metal oxide film according to the present invention, a solution containing an alkyl metal is sprayed onto a substrate placed under non-vacuum. Further, when the solution is sprayed, a dopant solution containing a dopant including an inorganic compound is sprayed onto the substrate. | 03-19-2015 |
252519530 | With halogen compound | 1 |
20130048924 | METAL FLUORIDE COMPOSITIONS FOR SELF FORMED BATTERIES - The described invention provides compositions related to an electronically insulating amorphous or nanocrystalline mixed ionic conductor composition comprising a metal fluoride composite to which an electrical potential is applied to form 1) a negative electrode, and 2) a positive electrode, wherein the negative electrode and positive electrode are formed in situ. | 02-28-2013 |
252519540 | Silicon containing or with compound of bismuth or silicon | 3 |
20080237551 | Ferroelectric thin film and device including the same - A composition for forming a ferroelectric thin film includes: a PZT sol-gel solution including at least one of: a whole or partial hydrolysate of a lead precursor and a whole or partial hydrolyzed and polycondensated product thereof; a whole or partial hydrolysate of a zirconium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a zirconium complex having at least one hydroxy ion and at least one non-hydrolyzable ligand; and a whole or partial hydrolysate of a titanium precursor, a whole or partial hydrolyzed and polycondensated product thereof, and a titanium complex having at least one hydroxyl ion and at least one non-hydrolyzable ligand; and a Bi | 10-02-2008 |
20090289235 | SOLUTION PROCESS FOR TRANSPARENT CONDUCTIVE OXIDE COATINGS - A process according to the present invention comprises
| 11-26-2009 |
20130248780 | ELECTRICALLY CONDUCTIVE FILM, PREPARATION METHOD AND APPLICATION THEREFOR - An electrically conductive film is provided, which comprises a film formed of zinc oxide adulterated with alumina, silicon dioxide and magnesia. The transparence of the zinc oxide film is increased by means of magnesium ion in the adulterated magnesia widening the transparent window of the zinc oxide film, the conductivity is increased and thus the resistivity is reduced by means of adulterating with alumina and silicon dioxide, and the resistivity during working is stabilized by means of adulterating with alumina, silicon dioxide and magnesia. A method for manufacturing the electrically conductive film and an application therefor are also provided. The method has simple process, mild conditions, low cost and high productivity, which is suit for industrialized produce. | 09-26-2013 |