Class / Patent application number | Description | Number of patent applications / Date published |
216084000 | With measuring, testing, or inspecting | 40 |
20080264905 | METHODS AND SYSTEMS FOR MEASURING A CHARACTERISTIC OF A SUBSTRATE OR PREPARING A SUBSTRATE FOR ANALYSIS - Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam. | 10-30-2008 |
20080302762 | Method for Analyzing Quartz Member - A disclosed method of analyzing a quartz member includes steps of supplying an etchant to an etchant receiving portion formed concavely in the quartz member so as to etch the quartz member; and analyzing the etchant used in the supplying step. | 12-11-2008 |
20080308530 | SUBSTRATE TREATING APPARATUS - A substrate treating apparatus for heating a treating solution formed of a chemical and a diluent, and immersing substrates in the treating solution for treatment. The apparatus includes a treating tank for storing the treating solution, a heater for heating the treating solution, a temperature detector for detecting temperature of the treating solution, a temperature controller for controlling the heater so that a detected temperature of the treating solution reaches a set temperature, a supplementing device for supplement the treating tank with the diluent, a concentration detector for detecting concentration of the treating solution, and a concentration controller, operable only when the temperature detector detects the treating solution being in a temperature range close to the set temperature, for controlling the supplementing device to adjust an amount of the diluent supplemented so that the concentration of the treating solution detected by the concentration detector becomes slightly higher than a boiling-point concentration corresponding to the set temperature of the treating solution. | 12-18-2008 |
20090026172 | DRY ETCHING METHOD AND DRY ETCHING APPARATUS - In the dry etching method and dry etching apparatus relating to the present invention, high frequency electric power is applied to upper and lower electrodes from high frequency power sources to generate plasma and etch an object on the electrode in a vacuum chamber into which a process gas is introduced via a gas inlet and the interior of which is maintained for a specific pressure by an exhaust unit. An etching rate estimation equation is created using apparatus parameters including an emission intensity ratio obtained by dividing an emission intensity of a plasma emission wavelength by an emission intensity of an inert gas. An estimated etching rate is calculated using the etching rate estimation equation. An estimated etching time to achieve a proper etching quantity is calculated based on the estimated etching rate and used for the control, reducing the production variation of fine devices. | 01-29-2009 |
20090084759 | METHOD AND SYSTEM FOR MULTI-PASS CORRECTION OF SUBSTRATE DEFECTS - A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data. | 04-02-2009 |
20090101626 | SELECTIVE ETCHING BATH METHODS - An etching method. The method includes etching a first plurality of silicon wafers in a first enchant, each silicon wafer having SiO | 04-23-2009 |
20090166331 | DYNAMIC HARD MAGNET THICKNESS ADJUSTMENT FOR REDUCED VARIATION IN FREE LAYER STABILIZATION FIELD IN A MAGNETORESISTIVE SENSOR - A method for manufacturing a current perpendicular to plane magnetoresistive sensor that allows for dynamic adjustment of free layer biasing to compensate for variations in thickness of an electrically insulating layer that separates the hard bias layers from the free layer. During fabrication of the sensor, the actual thickness of the insulation layers is measured. Then, to maintain a desired magnetic stabilization of the free layer one of three options can be utilized. Option one; adjust the stripe height target to maintain the desired magnetic stabilization. Option two; adjust the hard magnet thickness to maintain the desired magnetic stabilization. Option three; use a combination of option one and option two, adjusting both the stripe height target and the hard magnet thickness to maintain the desired magnetic stabilization. | 07-02-2009 |
20090277875 | Method for the Determination of the Surface Occupation of a Silica Glass Component - A method known in prior art for determining the occupation of the surface of a silica glass component with impurities comprises taking a sample, a process in which at least some of the surface of the silica glass component is brought in contact with an acidic desorption solution, and surface impurities that are to be analyzed are accumulated therein and are subjected to an element-specific analysis. The aim of the invention is to create a method which is based on said method, allows the occupation of the surface of silica glass components to be determined accurately and reproducibly, and is suited for determining small amounts of impurities within the order of magnitude of 10 | 11-12-2009 |
20090294405 | METHODS OF PRODUCING OSCILLATOR AND APPARATUSES FOR PRODUCING OSCILLATOR - A method of producing an oscillator includes a first step, a second step and a third step. In the first step, an oscillator is formed in a substrate immersed in an etchant, by wet etching. In the second step, the wet etching is stopped. In the third step, the oscillation of the oscillator in the etchant is excited, and the oscillating condition of the excited oscillator relevant to a target frequency of the oscillator is detected. The third step is performed at least once prior to the second step. | 12-03-2009 |
20100102032 | PROCESS AND INSTALLATION FOR THE HOT MARKING OF TRANSLUCENT OR TRANSPARENT OBJECTS - The invention relates to an installation for marking, at the exit of a forming machine ( | 04-29-2010 |
20100258530 | SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF DEVICE - A substrate processor enables realization of a proper process by combining advantages of a remote plasma and a plasma generated in an entire processing chamber. The substrate processor includes a conductive member ( | 10-14-2010 |
20110056913 | REDUCED ISOTROPIC ETCHANT MATERIAL CONSUMPTION AND WASTE GENERATION - Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like. | 03-10-2011 |
20110180512 | Accurately Monitored CMP Recycling - A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry. | 07-28-2011 |
20120138572 | END POINT DETECTING METHOD OF METAL ETCHING AND DEVICE THEREOF - Disclosed is an end point detecting method of metal etching and a device thereof. The end point detecting method of metal etching comprises: performing scan to a metal film to acquire a proportion of a transparency area of the metal film in a scanned area; judging whether the proportion of the transparency area reaches a predetermined value or not; and confirming a current etching time of the metal film as an etching end point time when the predetermined value is reached. The device comprises an acquirement module, a judgment module and a confirmation module. The acquirement module performs scan to the metal film to acquire the proportion of the transparency area. The judgment module judges whether the proportion reaches the predetermined value or not. The confirmation module confirms the current etching time of the metal film as the etching end point time when the proportion reaches the predetermined value. | 06-07-2012 |
20120199555 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a high-speed supply system having a relatively small opening for ejecting a processing liquid through the relatively small opening to supply the processing liquid into a processing bath, and a low-speed supply system having a relatively large opening for ejecting the processing liquid through the relatively large opening to supply the processing liquid into the processing bath. While an etching process is in progress, the processing liquid is supplied through the high-speed supply system. This decreases a difference in concentration of a liquid chemical component in the processing liquid within the processing bath to improve the uniformity of the etching process. While the etching process is not in progress, on the other hand, the processing liquid is supplied through the low-speed supply system. This improves the efficiency of the replacement of the processing liquid within the processing bath. | 08-09-2012 |
20120211468 | System and Method for Cleaning Semiconductor Fabrication Equipment Parts - An exemplary embodiment discloses a process for cleaning semiconductor fabrication equipment parts with non-metallic surfaces. The process optionally includes providing a semiconductor fabrication part with a non-metallic surface to be cleaned and applying a dilute aqueous solution to remove contamination from the non-metallic surface. The aqueous solution optionally includes dilute amounts of hydrofluoric acid, nitric acid and hydrogen peroxide. The dilute amounts would optionally be in the ranges of 0.5-1.5% wt. hydrofluoric acid, 0.1-0.5% wt. nitric acid and 1-10% wt. hydrogen peroxide. | 08-23-2012 |
20130256273 | SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD - A substrate treatment apparatus includes: a chamber; a substrate being treated with a treatment liquid in the chamber; a temperature measuring unit which measures an internal air temperature of the chamber and/or a temperature of the treatment liquid; a temperature adjusting unit which changes the internal air temperature and/or the temperature of the treatment liquid; a storage unit which stores a map defining a relationship between the air temperature and the treatment liquid temperature so that a treatment liquid temperature level for a given air temperature level is lower than the given air temperature level; and a temperature controlling unit which sets a target value of the internal air temperature of the chamber or the temperature of the treatment liquid based on the map and a measurement value detected by the temperature measuring unit, and controls the temperature adjusting unit based on the target value. | 10-03-2013 |
20140061158 | REDUCED ISOTROPIC ETCHANT MATERIAL CONSUMPTION AND WASTE GENERATION - Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like. | 03-06-2014 |
20140209567 | TEMPLATE, MANUFACTURING METHOD OF THE TEMPLATE, AND STRAIN MEASURING METHOD IN THE TEMPLATE - According to one embodiment, provided is a template including a first pattern that is to be transferred to a processing target and is arranged on a transfer region defined on a first principal surface of a template substrate. The template includes a second pattern that is used to measure a position and arranged on a second principal surface of the template substrate opposite to the first principal surface. | 07-31-2014 |
20150021296 | METHODS FOR ETCHING A WORKPIECE, AN APPARATUS CONFIGURED TO ETCH A WORKPIECE, AND A NON-TRANSITORY COMPUTER READABLE MEDIUM - A method for etching a workpiece may be provided, which may include: determining a plurality of reference etch profiles for a plurality of positions of an etchant dispenser, each reference etch profile corresponding to a respective position of the plurality of positions of the etchant dispenser; determining a thickness profile of the workpiece; determining a respective etch duration for each position of the plurality of positions of the etchant dispenser based on the determined thickness profile and the plurality of reference etch profiles, to reduce a total thickness variation of the workpiece; and dispensing an etchant over the workpiece via the etchant dispenser for the determined respective etch duration for each position of the plurality of positions. | 01-22-2015 |
20150076113 | METHOD FOR FORMING THROUGH-HOLE IN INSULATING SUBSTRATE BY USING LASER BEAM - A method including a) forming a through-hole in a dummy substrate including a surface by radiating a laser to the surface of the dummy substrate in a state where the dummy substrate is moved relative to the laser along a direction parallel to the surface of the dummy substrate, b) determining an angle α (−90°<α<+90°) of the through-hole relative to a line perpendicular to the surface of the dummy substrate, and c) forming a through-hole in the insulating substrate with the same conditions as step a) except for radiating a laser at an angle β relative to a line perpendicular to a surface of the insulating substrate. The angle β is set to be line symmetric with the angle α relative to the line perpendicular to the surface of the insulating substrate and satisfy a relationship of β=−α. | 03-19-2015 |
20160035597 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A phosphoric acid aqueous solution in a production tank circulates a circulation system. The circulation system is configured to be switchable between a first state in which the phosphoric acid aqueous solution is circulated through a bypass pipe and a second state in which the phosphoric acid aqueous solution is circulated through a filter. When a silicon containing liquid is supplied to the production tank, the circulation system is switched to the first state. When silicon particles are uniformly dispersed in the phosphoric acid aqueous solution, the circulation system is switched to the second state. Alternatively, a filtration member is provided in the production tank. The silicon containing liquid is stored in the filtration member. The filtration member is dipped in the phosphoric acid aqueous solution stored in the production tank. The silicon containing liquid is permeated through the filtration member, and is mixed with the phosphoric acid aqueous solution. | 02-04-2016 |
20160125980 | PROCESSING APPARATUS AND PROCESSING METHOD - According to one embodiment, a processing apparatus includes a container, a processor, a supply unit, a recovery unit, a calculator, and a replenishing liquid supply unit. The container contains buffered hydrogen fluoride. The processor performs processing of a processing object using the buffered hydrogen fluoride. The supply unit supplies the buffered hydrogen fluoride to the processor. The buffered hydrogen fluoride is contained in the container. The recovery unit recovers the buffered hydrogen fluoride used in the processor and supplies the recovered buffered hydrogen fluoride to the container. The calculator calculates an evaporation amount of the buffered hydrogen fluoride. The replenishing liquid supply unit supplies the same amount of a replenishing liquid as the calculated evaporation amount of the buffered hydrogen fluoride to the buffered hydrogen fluoride. The replenishing liquid includes ammonia and water. | 05-05-2016 |
20160177456 | Method Of Improving Lifetime Of Etching Liquid And Yield In CU-Interconnection Process And CU-Interconnection Etching Device | 06-23-2016 |
20160184859 | SUBSTRATE LIQUID PROCESSING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM STORING SUBSTRATE LIQUID PROCESSING PROGRAM - Provided is a substrate liquid processing apparatus that processes a substrate with a processing liquid. The substrate liquid processing apparatus includes: a processing liquid storage unit configured to store the processing liquid therein; a processing liquid heating unit configured to heat the processing liquid, a controller configured to control the processing liquid heating unit; a temperature sensor; and a concentration sensor connected to the controller. The controller is configured to: measure a concentration of the processing liquid with the concentration sensor, measure a temperature of the processing liquid with the temperature sensor, calculate a boiling point corresponding to the measured concentration of the processing liquid, and control the output of the processing liquid heating unit, based on the boiling point and the measured temperature of the processing liquid. | 06-30-2016 |
20170232784 | System and Method for Cleaning Semiconductor Fabrication Equipment Parts | 08-17-2017 |
20220134375 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a substrate holding section that holds a substrate, a processing tank that stores a processing liquid allowing the substrate held by the substrate holding section to be immersed in, and a plurality of bubble generating pipes that each supply a gas to the processing liquid to generate bubbles in the processing liquid. Of the plurality of bubble generating pipes, a flow rate of a gas supplied to an outer bubble generating pipe located below an outer region of the substrate immersed in the processing liquid differs from a flow rate of a gas supplied to an inner bubble generating pipe located below a central region of the substrate. | 05-05-2022 |
216085000 | By optical means or of an optical property | 9 |
20090032497 | System and method for controlling the application of acid etchers or cleaners by means of color-changing dye - An acidic etcher solution for etching a substrate's surface. The acidic etcher solution includes an acid and a pH indicator, the pH indicator having at least one color transition at a pH below 7. The acidic etcher solution having an initial color at an initial pH when applied to the surface to allow determination of the evenness of the coating and the etcher having a second color at a second pH higher than the first pH wherein visual inspection allows for a determination that the etcher is substantially finished reacting. | 02-05-2009 |
20100025374 | METHOD FOR MEASURING THE ACTIVE KOH CONCENTRATION IN A KOH ETCHING PROCESS - The invention relates to a method for in-line measuring the active KOH concentration in a KOH etching process in which process silicon hydroxide is produced by a reduction reaction according to the formula: 2K | 02-04-2010 |
20120132620 | Secure check code scanner - A device and method for secure check processing in a paper check scanning device that scans the identification encoding characters on the surface of a paper check, creating an electronically digitized record of the scanned physical identification indicators, transmitting the digitized record of the indicators to a verification unit, and awaiting validation and acceptance of the digitized record. The digitized record may be validated and accepted either through an electronic processing system or manually by human validation personnel. After the digitized record has been accepted the acceptance notification is sent to the check scanner. Upon receipt of the validation and acceptance of the digitized record of the paper check, the secure check scanner moves the paper check into position and the encoded identification characters on the paper check are altered by removing the area of the paper check containing the identification characters to render the paper check unscannable. | 05-31-2012 |
20130206726 | LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM - A substrate holding unit of a liquid processing apparatus holds a circular substrate horizontally and rotates the substrate about a vertical axis, and a chemical liquid nozzle supplies a chemical liquid to the peripheral edge of the substrate while the substrate is being rotated in order to remove a film of the peripheral edge. An image capture unit captures an image of the peripheral edge, and a determination unit calculates an actually removed value for a removed width of the film based on a result of the image capturing and determines whether the removed width is suitable or not. | 08-15-2013 |
20130334172 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER READABLE STORAGE MEDIUM STORING SUBSTRATE PROCESSING PROGRAM - Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera. | 12-19-2013 |
20140061159 | COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND THIN SAMPLE PROCESSING METHOD - A composite charged particle beam apparatus includes: a FIB column irradiating a thin sample with FIB; a GIB column irradiating the thin sample with GIB; a sample stage on which the thin sample is placed; a first tilt unit for tilting the thin sample about a first tilt axis of the sample stage, the first tilt axis being orthogonal to an FIB irradiation axis and being located inside a first plane formed by the FIB irradiation axis and a GIB irradiation axis; and a second tilt unit for tilting the thin sample about an axis which is orthogonal to the FIB irradiation axis and the first tilt axis. | 03-06-2014 |
20140124479 | METHOD OF REMOVING COATING FILM OF SUBSTRATE PERIPHERAL PORTION, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY STORAGE MEDIUM - A method of removing a coating film of a substrate peripheral portion, is provided with holding and supporting a circular substrate by allowing a transfer body to transfer a rear surface of the substrate to a supporting part; removing a coating film in the shape of a ring by a predetermined width size by supplying a solvent from a solvent nozzle to a peripheral portion of the coating film formed on the surface of the substrate; transferring the substrate to an inspection module for inspecting a state of the coating film by imaging the entire surface of the substrate; detecting a removal region of the coating film based on image data acquired by the inspection module; and correcting a delivery position of a succeeding substrate with respect to the supporting part by the transfer body based on the detection result of the removal region of the coating film. | 05-08-2014 |
20140190937 | System and Method for Cleaning Semiconductor Fabrication Equipment Parts - An exemplary embodiment discloses a process for cleaning semiconductor fabrication equipment parts with non-metallic surfaces. The process optionally includes providing a semiconductor fabrication part with a non-metallic surface to be cleaned and applying a dilute aqueous solution to remove contamination from the non-metallic surface. The aqueous solution optionally includes dilute amounts of hydrofluoric acid, nitric acid and hydrogen peroxide. The dilute amounts would optionally be in the ranges of 0.5-1.5% wt. hydrofluoric acid, 0.1-0.5% wt. nitric acid and 1-10% wt. hydrogen peroxide. | 07-10-2014 |
20160089688 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATMENT METHOD FOR DISCHARGING TREATMENT SOLUTION FROM NOZZLE TO SUBSTRATE - An upper treatment solution nozzle discharges a treatment solution at a treatment position above a substrate. A reference image and a test image are cut out from an image captured after the upper treatment solution nozzle receives an instruction to start discharging the treatment solution. The test image is an image including an area of a surface of a substrate, in which a liquid flow of the treatment solution from the upper treatment solution nozzle is to be formed. The reference image is an image of an area of the surface of the substrate except for the area in which the liquid flow of the treatment solution from the upper treatment solution nozzle is to be formed. Through the comparison between the reference image and the test image, a discharge of the treatment solution from the upper treatment solution nozzle is determined. | 03-31-2016 |
216086000 | By electrical means or of an electrical property | 4 |
20090179008 | SUBSTRATE TREATING APPARATUS AND METHOD - A substrate treating apparatus for treating substrates with a treating solution having a mixture of a chemical and a diluent. The apparatus includes a treating tank for storing the treating solution, a heating device for heating the treating solution, a supply pipe for supplying a gas at a fixed flow rate, the supply pipe having a detecting end at a predetermined depth in the treating tank, a pressure detecting device for detecting a pressure in the supply pipe, a converting device for converting the pressure detected by the pressure detecting device into a voltage, a storage device for storing, as a reference voltage, a voltage received from the converting device when a reference liquid at a reference temperature is stored in the treating tank, and a computing device for deriving an actual specific gravity of the treating solution from the reference voltage stored in the storage device, and a treatment voltage received from the converting device when the treating solution stored in the treating tank has been heated to a treating temperature by the heating device. | 07-16-2009 |
20120043301 | METHOD AND APPARATUS FOR CONTROLLING AND MONITORING THE POTENTIAL - An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided. | 02-23-2012 |
20130001198 | METHOD AND APPARATUS FOR CONTROLLING AND MONITORING THE POTENTIAL - An electroplating apparatus including a reference electrode to control the potential during an electro-deposition process. The electroplating apparatus may include a bath containing a plating electrolyte and an anode present in a first portion of the bath containing the plating electrolyte. A cathode is present in a second portion of the bath containing the plating electrolyte. A reference electrode is present at a perimeter of the cathode. The electroplating apparatus also includes a control system to bias the cathode and the anode to provide a potential. A measuring system is provided in electrical communication with the reference electrode to measure the potential of the cathode. Methods of using the above described electroplating apparatus are also provided. Structures and method for electroless deposition are also provided. | 01-03-2013 |
20130008871 | METHODS FOR AUTOMATICALLY DETERMINING CAPACITOR VALUES AND SYSTEMS THEREOF - A method for automatically performing power matching using a mechanical RF match during substrate processing is provided. The method includes providing a plurality of parameters for the substrate processing wherein the plurality of parameters including at least a predefined number of learning cycles. The method also includes setting the mechanical RF match to operate in a mechanical tuning mode. The method further includes providing a first set of instructions to the substrate processing to ignore a predefined number of cycles of Rapid Alternating Process RAP steps. The method yet also includes operating the mechanical RF match in the mechanical tuning mode for the predefined number of learning cycles. The method yet further includes determining a set of optimal capacitor values. The method moreover includes providing a second set of instructions to a power generator to operate in a frequency tuning mode. | 01-10-2013 |