Class / Patent application number | Description | Number of patent applications / Date published |
216051000 | Mask resist contains inorganic material | 22 |
20090001050 | Method for forming a deep trench - A method for forming a deep trench includes providing a substrate with a bottom layer and a top layer; performing a first etching process to etch the top layer, the bottom layer and the substrate so as to form a recess; selectively depositing a liner covering the top layer, the bottom layer and part of the substrate in the recess; using the liner as an etching mask to perform a second dry etching to etch the recess unmasked by the liner so as to form a deep trench; performing a selective wet etching to remove the top layer; and performing a post wet etching to enlarge the deep trench. | 01-01-2009 |
20090107954 | METHOD FOR CONTROLLING ADI-AEI CD DIFFERENCE RATIO OF OPENINGS HAVING DIFFERENT SIZES - A method for controlling ADI-AEI CD difference ratios of openings having different sizes is provided. First, a first etching step using a patterned photoresist layer as a mask is performed to form a patterned Si-containing material layer and a polymer layer on sidewalls thereof. Next, a second etching step is performed with the patterned photoresist layer, the patterned Si-containing material layer and the polymer layer as masks to at least remove an exposed portion of a etching resistive layer to form a patterned etching resistive layer. A portion of a target material layer is removed by using the patterned etching resistive layer as an etching mask to form a first and a second openings in the target material layer. The method is characterized by controlling etching parameters of the first and second etching steps to obtain predetermined ADI-AEI CD difference ratios. | 04-30-2009 |
20090184091 | DIAMOND-LIKE CARBON (DLC) HARDMASK AND METHODS OF FABRICATION USING SAME - A method according to one embodiment comprises forming a thin film layer; forming a hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; removing a portion of the hardmask layer; and removing a portion of the thin film layer that is unprotected by the hardmask layer. A method according to another embodiment comprises forming a thin film layer; forming a patterned hardmask layer above the thin film layer, the hardmask layer comprising laminated layers of diamond-like carbon; and implanting a material into a portion of the thin film layer that is unprotected by the patterned hardmask layer. Additional methods are disclosed. | 07-23-2009 |
20090250431 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing method that processes a substrate on which a plurality of patterns adjacent to each other are formed, has: supplying a first processing liquid to a principal surface of the substrate that is dry and has the patterns formed thereon to make the first processing liquid adhere to the principal surface of the substrate; and supplying a second processing liquid having a higher surface tension than the first processing liquid to the principal surface of the substrate in the state where the first processing liquid adheres to the principal surface of the substrate to process the principal surface of the substrate with the second processing liquid. | 10-08-2009 |
20090314743 | METHOD OF ETCHING A DIELECTRIC LAYER - A method of etching a dielectric layer includes providing a substrate, which includes a dielectric layer and a metal layer, performing a first etching process on the metal layer, and performing a second etching process on the dielectric layer to form a opening in the dielectric layer. The first etching process and the second etching process are in-situ carried out in the same reaction chamber without a vent. Since the first and second etching processes are not performed in different reaction chambers respectively, the cycle time can therefore be improved in the present invention. Because the first and second etching processes are performed without a vent, the substrate is protected from the pollution existing in surrounding. | 12-24-2009 |
20100000969 | Patterning method - A patterning method is provided. First, a substrate having an objective material layer thereon is provided. Thereafter, a mask layer is formed on the objective material layer. Afterwards, a patterned layer is formed over the mask layer, wherein a material of the patterned layer includes a metal-containing substance. Then, the mask layer is patterned to form a patterned mask layer. Further, the objective material layer is patterned, using the patterned mask layer as a mask. | 01-07-2010 |
20100270264 | NEAR FIELD EXPOSURE MASK, METHOD OF FORMING RESIST PATTERN USING THE MASK, AND METHOD OF PRODUCING DEVICE - Provided are a near field exposure mask which can suppress heat generation of a mask during exposure and can also suppress variation in size of a resist pattern for each shot, and a resist pattern forming method using the same. The near field exposure mask includes a transparent mask matrix l | 10-28-2010 |
20110168670 | Patterned Sapphire Substrate Manufacturing Method - A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes. | 07-14-2011 |
20130048605 | DOUBLE PATTERNING ETCHING PROCESS - A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100° C. | 02-28-2013 |
20130270227 | LAYER-LAYER ETCH OF NON VOLATILE MATERIALS - A method for etching a metal layer dispose below a mask is provided. The metal layer is placed in an etch chamber. A precursor gas is flowed into the etch chamber. The precursor gas is adsorbed into the metal layer to form a precursor metal complex. The precursor metal complex is heated to a temperature above a vaporization temperature of the precursor metal complex, while the metal layer is exposed to the precursor gas. The vaporized precursor metal complex is exhausted from the etch chamber. | 10-17-2013 |
20130306596 | BLANK FOR MOLD PRODUCTION AND METHOD FOR MANUFACTURING MOLD - A hard mask film | 11-21-2013 |
20130334170 | TECHNIQUES FOR PRODUCING THIN FILMS OF SINGLE CRYSTAL DIAMOND - Techniques for fabricating thin single crystal diamond films from a diamond structure having a top surface including implanting a dose of ions at a predetermined depth below the top surface to form a damage layer, selectively masking the top surface to expose one or more portions of the diamond structure, vertically etching one or more of the exposed portions to the predetermined depth, and exfoliating the unexposed portion to form at least one thin single crystal diamond film. | 12-19-2013 |
20140076848 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching method deposits a silicon-containing deposit by a plasma processing using a Si-containing gas on an object to be processed that includes a film to be processed, an organic film formed in a plurality of narrow linear portions on the film to be processed, and a rigid film that covers both the film to be processed which is exposed between the linear portions and the linear portions. In the plasma etching method, each of the plurality of narrow linear portions of the organic film and the film to be processed between the linear portions are exposed by etching the silicon-containing deposit by plasma of CF-based gas and CHF-based gas after the silicon-containing deposit is deposited. | 03-20-2014 |
20140097153 | METHOD OF PLASMA ETCHING - a method of plasma etching a silicon carbide workpiece includes forming a mask on a surface of the silicon carbide workpiece, performing an initial plasma etch on the masked surface using a first set of process conditions, wherein the plasma is produced using an etchant gas mixture which includes i) oxygen and ii) at least one fluorine rich gas which is present in the etchant gas mixture at a volume ratio of less than 50%, and subsequently performing a bulk plasma etch process using a second set of process conditions which differ from the first set of process conditions. | 04-10-2014 |
20140144876 | PLASMA ETCHING METHOD - A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition. | 05-29-2014 |
20140291288 | METHOD FOR ETCHING FILM HAVING TRANSITION METAL - Provided is a method of etching a transition metal-containing film using a substrate processing apparatus. The substrate processing apparatus includes: a processing container configured to define a processing chamber and a plasma generation chamber; and a shielding unit provided between the processing chamber and the plasma generation chamber and formed with a plurality of openings to communicate the processing chamber and the plasma generation chamber with each other. The shielding unit has a shielding property against ultraviolet rays. The method includes: supplying neutral particles of oxygen atoms to the processing chamber in which a workpiece is accommodated by generating plasma of a first gas containing oxygen in the plasma generation chamber; supplying a second gas to complex a transition metal oxidized while supplying the neutral particles of oxygen to the processing chamber; and supplying neutral particles of rare gas atoms to the processing chamber by generating plasma of a rare gas. | 10-02-2014 |
20140299576 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method includes an etching process of etching an insulating film formed on a processing target object in a chamber by plasma of a first fluorine-containing gas with a TiN film having a preset pattern as a mask; a modifying process of modifying, between a carbon-containing film and a Ti-containing film adhering to a component within the chamber, a surface of the Ti-containing film by plasma of an oxygen-containing gas while removing the carbon-containing film by the plasma of the oxygen-containing gas, after the etching process; a first removing process of removing a TiO film, which is obtained by modifying the surface of the Ti-containing film, by plasma of a second fluorine-containing gas; and a second removing process of removing a residual film of the Ti-containing film, which is exposed by removing the TiO film, from the component within the chamber by plasma of a chlorine-containing gas. | 10-09-2014 |
20140346142 | METHOD FOR MAKING A CHEMICAL CONTRAST PATTERN USING BLOCK COPOLYMERS AND SEQUENTIAL INFILTRATION SYNTHESIS - A method for making a chemical contrast pattern uses directed self-assembly of block copolymers (BCPs) and sequential infiltration synthesis (SIS) of an inorganic material. For an example with poly(styrene-block-methyl methacrylate) (PS-b-PMMA) as the BCP and alumina as the inorganic material, the PS and PMMA self-assemble on a suitable substrate. The PMMA is removed and the PS is oxidized. A surface modification polymer (SMP) is deposited on the oxidized PS and the exposed substrate and the SMP not bound to the substrate is removed. The structure is placed in an atomic layer deposition chamber. Alumina precursors reactive with the oxidized PS are introduced and infuse by SIS into the oxidized PS, thereby forming on the substrate a chemical contrast pattern of SMP and alumina. The resulting chemical contrast pattern can be used for lithographic masks, for example to etch the underlying substrate to make an imprint template. | 11-27-2014 |
20140353277 | METHOD FOR FABRICATING DEFECT FREE SILICON MOLD INSERT - The present invention discloses a method for fabricating a default free silicon mold insert. The method includes providing a silicon mold insert substrate, producing a photoresist pattern, coating a metal film, removing the photoresist pattern, performing heating and annealing, performing dry etching, and removing the metal balls so as to fabricate the default free silicon mold insert. The default free silicon mold insert produced by the method of the present invention can be applied to the nonoimprint process in manufacturing epitaxy wafers to microscopicly provide uniform distances of patterns on the silicon mold insert, and macroscopicly eliminate the grid lines on the epitaxy wafers, and enormously raise the throughput of epitaxy wafer productions. With the ease of application, cheap and fully reproducible nature of the default free silicon mold insert, nanoimprint technology can really replace the stepper machines used nowadays for producing default free nanoimprint mold insert. | 12-04-2014 |
20150021293 | METHOD FOR PROVIDING A NANOPATTERN OF METAL OXIDE NANOSTRUCTURES ON A SUBSTRATE - A method for providing a nanopattern of periodically ordered metal oxide nanostructures on a substrate is described. The method comprises the steps of providing a microphase separated block copolymer as a thin film on a substrate, the block copolymer comprising a first polymer having an affinity for a cations of the metal and a second polymer having a lower affinity for the cations than the first polymer, and selectively incorporating a salt of the metal cation into the first polymer of the block copolymer by means of a solvation process prior to or after formation of the microphase separated block copolymer. The block copolymer film is then treated to oxidise the metal ion salt and remove the polymers leaving a nanopattern of metal oxide nanostructures on the substrate. | 01-22-2015 |
20150376798 | High aspect ratio dense pattern-programmable nanostructures utilizing metal assisted chemical etching - A method of ultra-high aspect ratio high resolution vertical directionality controlled metal-assisted chemical etching, V-MACE, is provided that includes forming a pattern on a substrate surface, using a lithographic or non-lithographic process, forming hole concentration balancing structures on the substrate, using a lithographic process or non-lithographic process, where the concentration balancing structures are proximal to the pattern, forming mechanical anchors internal or external to the patterned structures, forming pathways for etchant and byproducts to diffuse, and etching vertical features from the substrate surface into the substrate, using metal-assisted chemical etching, MACE, where the vertical features are confined to a vertical direction by the concentration balancing structures. | 12-31-2015 |
20160136682 | NANOPARTICLE COATED SUBSTRATES AND METHOD OF MAKING THE SAME - An apparatus for applying nanoparticles to a surface of a substrate is disclosed. The apparatus includes a support member, a deposition plate extending from the support member, and a platform having a flat surface for receiving a substrate. The support member and the platform are capable of moving relative to each other, enabling an end of the deposition plate to move across the flat surface of the platform. | 05-19-2016 |