Class / Patent application number | Description | Number of patent applications / Date published |
216047000 | Mask is multilayer resist | 44 |
20080230516 | Method for forming fine patterns using etching slope of hard mask layer in semiconductor device - A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer and a second hard mask layer over an etch target layer, forming second hard mask patterns by etching the second hard mask layer, wherein an etching profile of the second hard mask layer has a positive slope, and etching the first hard mask layer and the etch target layer using the second hard mask patterns as an etch mask. | 09-25-2008 |
20080277379 | METHOD FOR MANUFACTURING A FILTER SUBSTRATE, INKJET RECORDING HEAD, AND METHOD FOR MANUFACTURING THE INKJET RECORDING HEAD - A filter capable of separating or filtering micro foreign particles in a flow passage is provided. A first mask and a second mask are formed on a silicon substrate by dry etching. Before performing the dry etching, a resist of the first mask is subjected to a heat treatment performed at a temperature equal to or higher than a glass transition point. A resist of the second mask is not subjected to such a heat treatment. This processing simultaneously forms in the substrate a groove portion and a wall having a hole that is located in the groove portion. A silicon material located beneath a wide portion of the first mask remains as a wall portion separating the holes. | 11-13-2008 |
20080308527 | ADVANCED MASK PATTERNING WITH PATTERNING LAYER - An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer. | 12-18-2008 |
20090050603 | MASK TRIMMING WITH ARL ETCH - A method for etching a dielectric layer disposed below an antireflection layer (ARL) is provided. The method comprises (a) forming a patterned mask with mask features over the ARL, the mask having isolated areas and dense areas of the mask features, (b) trimming and opening, and (c) etching the dielectric layer using the trimmed mask. The trimming and opening comprises a plurality of cycles, where each cycle includes (b1) a trim-etch phase which etches the ARL in a bottom of the mask features and selectively trims the isolated areas of the mask with respect to the dense areas, and (b2) a deposition-etch phase which deposits a deposition layer on the mask while further etching the ARL in the bottom of the mask features. The trimming and opening result in a net trimming of the mask in the isolated areas. | 02-26-2009 |
20090078676 | METHOD FOR DRY ETCHING Al2O3 FILM - The invention provides a dry etching method for processing a wafer having an Ru film formed on a thick Al | 03-26-2009 |
20090179004 | PATTERN FORMATION METHOD - A pattern formation method according to one embodiment includes: depositing a first C-containing film and a first inorganic layer pattern above a workpiece, the first inorganic layer pattern being comprised of linear patterns arranged in parallel and having a longitudinal direction in a predetermined direction; depositing a second C-containing film and a second inorganic layer pattern above the first C-containing film and the first inorganic layer pattern, at least a portion of the second inorganic layer pattern being comprised of linear patterns arranged in parallel and intersecting with the first inorganic layer pattern; removing the first and second C-containing films other than regions located substantially directly below at least one of the first and second inorganic layer patterns by etching, to form an etching mask including the first and second inorganic layer patterns and the etched first and second C-containing films; and forming a pattern of the workpiece by etching the workpiece using the etching mask. | 07-16-2009 |
20090194503 | METHOD FOR ETCHING SILICON-CONTAINING ARC LAYER WITH REDUCED CD BIAS - A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process. Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the offset in the critical dimension (CD) bias is reduced between nested structures and isolated structures. | 08-06-2009 |
20090206053 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method etching an organic underlayer film formed on a target substrate by using a plasma of a processing gas via a pattered mask layer formed on the underlayer film. The processing gas includes a gaseous mixture of an oxygen-containing gas and a sulfur-containing gas not having oxygen. The oxygen-containing gas is one of O | 08-20-2009 |
20090212010 | PLASMA ETCHING CARBONACEOUS LAYERS WITH SULFUR-BASED ETCHANTS - Etching of carbonaceous layers with an etchant gas mixture including molecular oxygen (O | 08-27-2009 |
20100163526 | Patterning Processes Comprising Amplified Patterns - The present invention is directed to substrates comprising amplified patterns, methods for making the amplified patterns, and methods of using the amplified patterns to form surface features on the substrates. | 07-01-2010 |
20100170871 | FINE PATTERN FORMING METHOD - A disclosed fine pattern forming method includes steps of: forming patterns made of a first photoresist film, arranged at a first pitch on a film; trimming the patterns made of the first photoresist film; depositing a protection film on the patterns made of the first photoresist film on the trimmed patterns made of the first photoresist film, the protection film being made of reaction products of an etching gas, thereby obtaining first patterns; forming other patterns made of a second photoresist film, arranged at a second pitch, on the protection film, the other patterns made of the second photoresist film being shifted by half of the first pitch from the corresponding patterns made of the first photoresist film; trimming the other patterns made of the second photoresist film into second patterns; and etching the film using the first patterns and the second patterns. | 07-08-2010 |
20110089141 | METHOD FOR THE PRODUCTION OF MULTI-STEPPED SUBSTRATE - A multi-stepped substrate having a plurality of steps is produced by forming, on the principal surface of a substrate, a plurality of masks which are put on top of each other, which differ from each other in the materials used for forming them and which are likewise different, from each other, in the means for peeling off the same; and that the substrate is subjected, in order, to dry-etching operations through the plurality of masks each having a desired shape such that the substrate has a plurality of steps each of which reflects the shape of each corresponding mask. | 04-21-2011 |
20110132870 | Microfluidic Module Including An Adhesiveless Self-Bonding Rebondable Polyimide - A method of making a microfluidic module is disclosed that includes forming a fluid flow channel in a self-bonding rebondable polyimide film to provide a channel sheet, the self-bonding rebondable polyimide film having a first mask layer self-bonded thereto; removing the first mask layer from the channel sheet after forming the fluid flow channel; and self-bonding the surface of the channel sheet exposed by removal of the first mask layer to a cover sheet. | 06-09-2011 |
20110253670 | METHODS FOR ETCHING SILICON-BASED ANTIREFLECTIVE LAYERS - Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl | 10-20-2011 |
20120111832 | Template Pillar Formation - Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials. | 05-10-2012 |
20130026133 | Method to Transfer Lithographic Patterns Into Inorganic Substrates - Techniques for minimizing or eliminating pattern deformation during lithographic pattern transfer to inorganic substrates are provided. In one aspect, a method for pattern transfer into an inorganic substrate is provided. The method includes the following steps. The inorganic substrate is provided. An organic planarizing layer is spin-coated on the inorganic substrate. The organic planarizing layer is baked. A hardmask is deposited onto the organic planarizing layer. A photoresist layer is spin-coated onto the hardmask. The photoresist layer is patterned. The hardmask is etched through the patterned photoresist layer using reactive ion etching (RIE). The organic planarizing layer is etched through the etched hardmask using RIE. A high-temperature anneal is performed in the absence of oxygen. The inorganic substrate is etched through the etched organic planarizing layer using reactive ion etching. | 01-31-2013 |
20130087529 | RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME - There is disclosed A resist underlayer film composition, the resist underlayer film composition contains a truxene compound having a substituted or an unsubstituted naphthol group as shown by the following general formula (1). There can be provided a resist underlayer film composition to form a resist underlayer film being capable of reducing reflectance and having high etching resistance, heat resistance. | 04-11-2013 |
20130105441 | MASK BLANK AND METHOD OF MANUFACTURING AN IMPRINTING MOLD | 05-02-2013 |
20130126472 | SUBSTRATE WITH ADHESION PROMOTING LAYER, METHOD FOR PRODUCING MOLD, AND METHOD FOR PRODUCING MASTER MOLD - Disclosed is a substrate with an adhesive auxiliary layer having an organic compound layer provided on a substrate, with an adhesive auxiliary layer to be interposed between the substrate and the organic compound layer wherein one molecule of a compound contained in the adhesive auxiliary layer includes an adsorption functional group and an adhesion promoting functional group, the adsorption functional group is composed of a modified silane group which is mainly bonded to the substrate, and the adhesion promoting functional group promotes and increases adhesion mainly to the organic compound layer. | 05-23-2013 |
20130186856 | METHOD OF FABRICATING SERVO INTEGRATED TEMPLATE - The embodiments disclose a method of fabricating servo integrated templates including depositing a protective layer on servo zone resist layer patterns, patterning integrated data zone features into a substrate, depositing a protective layer on data zones and removing the servo zone protective layer and patterning integrated servo zone features into the substrate and removing the data zone protective layer creating a substrate template used in fabricating data and servo zone integrated patterned stacks. | 07-25-2013 |
20130233826 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD - A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass. | 09-12-2013 |
20130284697 | TECHNIQUES FOR GENERATING THREE DIMENSIONAL STRUCTURES - Techniques for forming a three dimensional (3D) feature on a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method comprising: forming a resist structure on the substrate, the resist structure having a first resist portion with a first thickness, a second resist portion with a second thickness, and a third resist portion with a third thickness, where the first thickness may be less than the second thickness, and where the second thickness may be less than the third thickness; implanting charged particles into the substrate through the first and second resist portions and forming an implanted region in the substrate; and etching the substrate to form the 3D feature on the substrate. | 10-31-2013 |
20130341304 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD AND RESIST UNDERLAYER FILM - A resist underlayer film-forming composition includes a polymer having a glass transition temperature (Tg) of 0 to 180° C. The resist underlayer film-forming composition is used for a multilayer resist process. The multilayer resist process includes forming a silicon-based oxide film on a surface of a resist underlayer film, and subjecting the silicon-based oxide film to wet etching. | 12-26-2013 |
20140097152 | SELF-ASSEMBLED PATTERN FORMING METHOD - A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained. | 04-10-2014 |
20140110373 | METHOD OF ETCHING COPPER LAYER AND MASK - A method of etching a copper layer of a target object including, on the copper layer, a mask having a pattern to be transferred onto the copper layer is provided. The method includes etching the copper layer by using plasma of a first gas containing a hydrogen gas; and processing the target object by using plasma of a second gas containing a hydrogen gas and a gas (hereinafter, referred to as “deposition gas”) that is deposited on the target object. Further, the etching of the copper layer by using plasma of the first gas and the processing of the target object by using plasma of the second gas are repeated alternately. | 04-24-2014 |
20140190935 | DUAL MANDREL SIDEWALL IMAGE TRANSFER PROCESSES - A combination of two lithographically patterned mandrels can be employed in conjunction with sidewall spacers to provide two spacers. The two spacers may intersect each other and/or contact sidewall surfaces of each other to provide a thickness that is a sum of the thicknesses of the two spacers. Further, the two spacers may be patterned to provide various patterns. In addition, portions of at least one of the two spacers may be etched employing an etch mask. Additionally or alternately, an additional material may be selectively added to portions of one of the two spacers. | 07-10-2014 |
20140246400 | RESIN HAVING FLUORENE STRUCTURE AND MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY - A resin having a fluorene structure, a relatively high carbon concentration in the resin, a relatively high heat resistance and a relatively high solvent solubility has a structure represented by | 09-04-2014 |
20140319097 | PHENOL MONOMER, POLYMER FOR FORMING A RESIST UNDERLAYER FILM INCLUDING SAME, AND COMPOSITION FOR A RESIST UNDERLAYER FILM INCLUDING SAME - A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (—CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (—NH—), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring. | 10-30-2014 |
20140374381 | MASK AND METHOD FOR FORMING THE SAME - A mask is disclosed. The mask includes at least one support base having at least one opening formed therein, where at least a portion of the boundary of the opening is tapered. The mask also includes at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and aligned with the at least one opening is formed in the at least one positioning layer. In addition, at least a portion of the boundary of the through opening is tapered. | 12-25-2014 |
20150034593 | METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE, METHOD OF FORMING PATTERN AND METHOD OF FORMING FINE PATTERN - A method of producing a structure containing a phase-separated structure, including: forming a layer including a neutralization film on a substrate; forming a layer containing a block copolymer on the layer including the neutralization film, the P | 02-05-2015 |
20150108087 | USE OF GRAPHO-EPITAXIAL DIRECTED SELF-ASSEMBLY TO PRECISELY CUT LINES - A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. An embodiment of the method includes aligning and preparing a first directed self-assembly pattern (DSA) pattern immediately overlying the plurality of lines, and transferring the first DSA pattern to form a first set of cuts in the plurality of lines. The embodiment further includes aligning and preparing a second DSA pattern immediately overlying the plurality of lines having the first set of cuts formed therein, and transferring the second DSA pattern to form a second set of cuts in the plurality of lines. The first and second DSA patterns each comprise a block copolymer having a hexagonal close-packed (HCP) morphology and a characteristic dimension L | 04-23-2015 |
20150301446 | MONOMER FOR HARDMASK COMPOSITION, HARDMASK COMPOSITION INCLUDING SAID MONOMER, AND METHOD FOR FORMING PATTERN USING SAID HARDMASK COMPOSITION - Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. | 10-22-2015 |
20150329718 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, | 11-19-2015 |
20150332931 | HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS USING THE HARDMASK COMPOSITION - A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent. | 11-19-2015 |
20150376777 | METHOD FOR MAKING MICROSTRUCTURE ON SUBSTRATE - The disclosure relates to a method of making a microstructure on a substrate. A carbon nanotube structure is provided, wherein the carbon nanotube structure includes a number of carbon nanotubes arranged orderly and defines a number of first openings. A carbon nanotube composite is formed by applying a protective layer on the carbon nanotube structure, wherein the carbon nanotube composite structure defines a number of second openings. The carbon nanotube composite structure is placed on a surface of the substrate, wherein parts of the surface are exposed from the number of second openings. The surface of the substrate is dry etched by using the carbon nanotube composite structure as a mask. | 12-31-2015 |
20160008844 | PROCESS FOR FORMING MULTI-LAYER FILM AND PATTERNING PROCESS | 01-14-2016 |
20160053132 | RESIST UNDERLAYER COMPOSITION AND METHOD FOR FORMING PATTERN USING SAME - An under-layer composition of resist having superior thermal stability, etching resistance, gap-filling property and void-preventing property, and a method for forming pattern using the same are disclosed. The under-layer composition of resist comprises: an aromatic ring containing polymer having the repeating unit of the following Formula 1; a compound of the following Formula 4; and an organic solvent. | 02-25-2016 |
20160068429 | PATTERN FORMING METHOD, PHOTOMASK, AND TEMPLATE FOR NANOIMPRINT - A pattern forming method includes forming a first region and a second region on a to-be-processed layer. The first region includes a guide pattern. In the second region, an affinity to one of the first segment and the second segment which are included in a self-assembly material, is higher than the affinity to the other. The self-assembly material is applied onto the first region and the second region. The self-assembly material is phase-separated into a first domain including the first segment, and a second domain including the second segment. Any one of the first domain and the second domain is selectively removed. | 03-10-2016 |
20160131978 | PATTERN FORMING METHOD - A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed. | 05-12-2016 |
20160133440 | METHODS OF FORMING FEATURES - A method of forming a feature in a void, the method including filling the void having at least one sloped wall with a polymeric material; forming a layer of photoresist over the polymeric material; forming a gap in the layer of photoresist; and etching the polymeric material exposed by the gap in the layer of photoresist to form a feature. | 05-12-2016 |
20160145379 | MONOMER, POLYMER, ORGANIC LAYER COMPOSITION, ORGANIC LAYER, AND METHOD OF FORMING PATTERNS - A monomer, a polymer, an organic layer composition, an organic layer and associated methods, the monomer being represented by Chemical Formula 1: | 05-26-2016 |
20160163547 | METHODS OF FORMING FINE PATTERNS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE METHODS - The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer. | 06-09-2016 |
20160167256 | METHOD FOR PRODUCING NANOIMPRINT MOLD | 06-16-2016 |
20160195807 | Lithography Process on High Topology Features | 07-07-2016 |