Entries |
Document | Title | Date |
20080245303 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber. | 10-09-2008 |
20080245304 | SYSTEM FOR SELECTIVE DEPOSITIONS OF MATERIALS TO SURFACES AND SUBSTRATES - A system is described for selectively depositing materials to surfaces at preselected locations and at controlled thicknesses. Materials can be further selectively deposited to sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces, e.g., to fill substrate feature patterns (vias). The invention finds application in such commercial processes as semiconductor chip manufacturing. The system is envisioned to provide alternatives to, or decreased need for, chemical mechanical planarization in semiconductor chip manufacturing. | 10-09-2008 |
20090031954 | SUSCEPTOR AND APPARATUS FOR MANUFACTURING EPITAXIAL WAFER - A susceptor capable of reducing unevenness in a film-thickness of an epitaxial film on an outer surface of a substrate wafer and a manufacturing apparatus of an epitaxial wafer are provided. The susceptor includes a wafer placement and a peripheral portion. The wafer placement is greater in size than the substrate wafer W and substantially disc-shaped. The peripheral portion is substantially in a ring-plate shape and includes: an inner circumference standing in a fashion surrounding a peripheral portion of the wafer placement; and an upper surface outwardly extending from an upper end of the inner circumference in parallel to the placement surface of the wafer placement. In the chemical vapor deposition control unit, an inner circumference has a curvature substantially similar to a curvature of the inner circumference of the peripheral portion, and the upper surface is leveled with the upper surface) of the peripheral portion. The chemical vapor deposition control unit is made of SiO2 which is less reactive with a reaction gas than a SiC film. | 02-05-2009 |
20090078202 | SUBSTRATE HEATER FOR MATERIAL DEPOSITION - A radiative heater for substrates in a physical vapor deposition process for fabricating films of materials in a wide dynamic range of process temperatures and gas pressures includes a heat radiating member made from a high-temperature and oxidation resistant material tolerant to vacuum conditions which separates a heater volume containing heating filaments from a process volume which contains a deposition substrate heated by radiation of the walls of the heat radiating member. The heating elements extend through the body of the heat radiating member as well as in proximity to its surface to provide delivery of the heat to the substrate. The heat radiating member is shaped to form a cavity containing the substrate. The walls of the cavity envelope the substrate and radiate heat towards the substrate. Alternatively, the substrate is adhered to the flat surface of the heat radiating member. | 03-26-2009 |
20090114156 | Film formation apparatus for semiconductor process - A film formation apparatus for a semiconductor process includes a support member having a plurality of support levels configured to support target substrates inside a reaction chamber; a film formation gas supply system configured to supply a film formation gas into the reaction chamber and including a gas distribution nozzle; a cleaning gas supply system configured to supply a cleaning gas for etching a by-product film deposited inside the reaction chamber; and an exhaust system configured to exhaust gas from inside the reaction chamber. The cleaning gas supply system includes a gas nozzle disposed near a bottom of the reaction chamber and having a gas supply port at its top directed upward, and the gas supply port is located below the lowermost one of the support levels of the support member. | 05-07-2009 |
20090126635 | Metalorganic Chemical Vapor Deposition Reactor - Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor ( | 05-21-2009 |
20090165719 | EPITAXIAL BARREL SUSCEPTOR HAVING IMPROVED THICKNESS UNIFORMITY - A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face. | 07-02-2009 |
20090165720 | SUBSTRATE TREATING APPARATUS - A substrate treating apparatus comprising a treatment chamber for housing a substrate, a stage on which the substrate is placed within the treatment chamber, a heating member arranged within the stage and used for heating the substrate, a sealing member arranged between the stage and the treatment chamber, and a cooling mechanism having a cooling medium, whose latent heat of vaporization is utilized for cooling the sealing member. | 07-02-2009 |
20090178619 | Substrate processing apparatus - A substrate processing apparatus includes a processing chamber, a substrate holding part that holds substrates of required numbers in the processing chamber, a gas supply/exhaust part that supplies or exhausts required gas into the processing chamber, a rotation part that rotates the substrate holding part, a first heating part provided in the substrate holding part so as to face at least an upper surface of each substrate held by the substrate holding part, and a power supply part that supplies power to the first heating part in a non-contact state by electromagnetic coupling. | 07-16-2009 |
20090178620 | Process for Depositing Thin Layers on a Substrate in a Process Chamber of Adjustable Height - An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface. | 07-16-2009 |
20090217875 | APPARATUS FOR THE HEAT TREATMENT OF DISC SHAPED SUBSTRATES - The application relates to an apparatus for the heat treatment of disc shaped substrates, in particular semi-conductor wafers. The apparatus has at least one radiation source and a treatment chamber accommodating the substrate having an upper wall element and a lower wall element, at least one of the wall elements lying adjacent to the at least one radiation source and being substantially transparent for the radiation from the radiation source. Furthermore, the apparatus makes provision for at least a first gas inlet apparatus. The first gas inlet apparatus has a plate element which is disposed within the treatment chamber between the substrate and the upper wall element, a collar ring disposed between the plate element and the upper wall element, and a first gas conveyance duct extending at least partially within the treatment chamber. The plate element has a larger diameter than the substrate and in a hole region approximately corresponding to the diameter of the substrate a plurality of through holes. The collar ring surrounds the hole region and has at least one inlet opening. The first gas conveyance duct has an outlet which is aligned with the inlet opening of the collar ring, a gas flow flowing out of the outlet having a main flow direction which is directed past a centre point of the collar ring. | 09-03-2009 |
20090235866 | CERAMIC HEATER - A ceramic heater for a semiconductor substrate process includes a plate and a shaft. The plate includes a first base and a second base bonded to the first base. Defined on a mounting surface of the first base are: a first region having a surface contacting with a mounted substrate; a purge groove provided in the portion covered with the substrate and surrounds the first region; and a second region having a surface surrounding the purge groove. The first base has: an adsorber configured to adsorb the mounted substrate onto the surface of the first region; and multiple purge holes each penetrating from the bottom surface of the purge groove to the lower surface of the first base. The purge groove is supplied with a purge gas through the multiple purge holes. The surface of the second region is located lower than that of the first region. | 09-24-2009 |
20090241837 | CERAMIC MEMBER, CERAMIC HEATER, SUBSTRATE PLACING MECHANISM, SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING CERAMIC MEMBER - A wafer mounting table constituted as a ceramic heater has a power feeding terminal section for a heating element and a bonding section to a supporting member as portions which are likely to be crack starting points. The wafer mounting table is constituted to permit compressive stress to be generated in the power feeding terminal section and/or the bonding section which are likely to be the crack starting points. | 10-01-2009 |
20090241838 | Polycrystalline silicon manufacturing apparatus - A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas. | 10-01-2009 |
20090272323 | SUSCEPTOR, SEMICONDUCTOR MANUFACTURING APPARATUS, AND SEMICONDUCTOR MANUFACTURING METHOD - A susceptor includes a first step portion on which a wafer is placed; and a convex portion placed on a bottom surface of the first step portion, wherein a void is formed between a top surface of the convex portion and a rear surface of the wafer in a state in which the wafer is placed on the top surface of the convex portion. | 11-05-2009 |
20090277387 | SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS INCLUDING THE SAME - There are provided a susceptor and a chemical vapor deposition apparatus including the same. The susceptor includes: at least one pocket accommodating a deposition object therein; a seating part stepped downward from a top end of the pocket, the seating part having the deposition object placed thereon; and a recess recessed from the seating part to a predetermined depth, wherein the recess has a radius of curvature ranging from substantially 8000 mm to 25000 mm. | 11-12-2009 |
20090277388 | HEATER WITH DETACHABLE SHAFT - Embodiments of the present invention generally include an apparatus for uniform heat distribution across the surface of a substrate during processing. The apparatus includes a substrate heater with a heated substrate support surface that is removable attached to a heater shaft via a fastening mechanism. The interface between the heated substrate support and the heater shaft may include a soft metal gasket and a vacuum or purge channel disposed therein. The substrate support surface may include regions for independently varying the back pressure of a substrate disposed thereon. | 11-12-2009 |
20090277389 | PROCESSING APPARATUS - A processing apparatus is provided for performing a process on a target object in a processing chamber which can be vacuumized, especially for performing high-k dielectric of HfO, HfSiO, ZrO, ZrSiO, PZT, BST and the like. A film adhesion preventing layer composed of an SAM (self-assembled monolayer) is arranged on the surface of the constituent member of the processing chamber to be exposed to the processing atmosphere in the processing chamber, for instance, on the inner wall surface of the processing chamber. Thus, on the surface of the constituent member, an unnecessary film difficult to be removed by dry cleaning is prevented from being deposited, so that cleaning frequency of the processing apparatus can be remarkably reduced. | 11-12-2009 |
20090293809 | STAGE UNIT FOR SUPPORTING A SUBSTRATE AND APPARATUS FOR PROCESSING A SUBSTRATE INCLUDING THE SAME - In a stage for supporting a substrate, a body, a base plate and a buffer are provided in the stage. The body on which the substrate is positioned includes a plate having a heating electrode for generating heat therein and a tube protruded from a bottom surface of the plate. The body is mounted on the base plate. The buffer is interposed between the base plate and the tube and has a thermal expansion ratio higher than that of the tube of the body and lower than that of the base plate. Accordingly, thermal expansion of the base plate may be absorbed by the buffer and may not have direct effect on the body. Therefore, the body may be prevented from being damaged due to the thermal expansion of the base plate. | 12-03-2009 |
20100012035 | VACUUM VAPOR PROCESSING APPARATUS - There is provided a vacuum evaporating apparatus which is suitable for performing a process in which a metal vapor atmosphere is formed in a processing chamber, the metal atoms in this metal vapor atmosphere are caused to be adhered to the surface of an object to be processed, and the metal atoms adhered to the surface of the object to be processed are diffused into grain boundary phases thereof. The apparatus comprises: a processing furnace ( | 01-21-2010 |
20100012036 | ISOLATION FOR MULTI-SINGLE-WAFER PROCESSING APPARATUS - An MSW processing apparatus includes two or more semi-isolated reaction chambers separated from one another by isolation regions configured with two or more TIG elements, either or both of which may be independently purged. The TIG elements may be configured in a staircase-like fashion and include vertical and horizontal conductance spacings, sized so that, under different operational process temperatures of the MSW processing apparatus, a change in the horizontal conductance spacing is less than a change in the vertical conductance spacing. | 01-21-2010 |
20100037826 | VACUUM VAPOR PROCESSING APPARATUS - There is provided a vacuum vapor processing apparatus which is capable of adjusting the amount of supply of metal atoms to an object to be processed and which has a simple construction. The vacuum vapor processing apparatus is provided with: a vacuum chamber ( | 02-18-2010 |
20100037827 | CVD Device with Substrate Holder with Differential Temperature Control - The invention relates to a device for depositing especially crystalline layers on an especially crystalline substrate, comprising a high-frequency heated substrate support from a conductive material on which the substrate is two-dimensionally supported, and which comprises a zone of higher conductivity. The system is specifically characterized in that the higher conductivity zone is associated with the surface of support of the substrate and substantially corresponds to the area occupied by the substrate. Further, the zone on which the substrate rests heats up more than the substrate surface surrounding the substrate. | 02-18-2010 |
20100058987 | Device For Vacuum Processing - Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output. | 03-11-2010 |
20100058988 | MANUFACTURING APPARATUS OF POLYCRYSTALLINE SILICON - A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed. | 03-11-2010 |
20100101494 | ELECTRODE AND CHEMICAL VAPOR DEPOSITION APPARATUS EMPLOYING THE ELECTRODE - A chemical vapor deposition apparatus is disclosed. The chemical vapor deposition apparatus comprises a chamber having a base plate, a chamber wall, a gas inlet, a gas outlet and a plurality of electrodes each comprising an electrode body and an electrode cap removably attached to the electrode body. The electrode body can be positioned through the base plate. The cap can be positioned inside the chamber. An electrical isolation layer is positioned between the electrode and the base plate. The plurality of electrodes are capable of being attached to a power source. At least two of the plurality of electrodes are capable of being electrically coupled to a silicon rod positioned in the chamber. | 04-29-2010 |
20100101495 | Restricted Radiated Heating Assembly for High Temperature Processing - A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor. | 04-29-2010 |
20100132615 | FILM DEPOSITION APPARATUS - In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space. | 06-03-2010 |
20100154711 | SUBSTRATE PROCESSING APPARATUS - Films are formed on a plurality of substrates through a batch process while preventing formation of films on the rear surfaces of the substrates. For this, a substrate processing apparatus comprises a reaction vessel, supports, a support holder, and an induction heating device. The reaction vessel is configured to process substrates therein. The supports are made of a conductive material and having a disk shape, and each of the supports is configured to accommodate a substrate in its concave part in a state where the substrate is horizontally positioned with a top surface of the substrate being exposed. The concave part is formed concentrically with a circumference of the support, and a difference between radii of the support and the concave part is greater than a distance between neighboring two of the supports held by the support holder. The support holder is configured to hold at least the supports horizontally in multiple stages. The induction heating device is configured to heat at least the supports held by the support holder inside the reaction vessel by using an induction heating method. | 06-24-2010 |
20100162956 | Substrate Processing Apparatus and Substrate Mount Table Used in the Apparatus - Disclosed is a susceptor which achieves uniform temperature distribution of a wafer placed on the susceptor, and also disclosed is a substrate processing apparatus provided with the susceptor. An annular recess | 07-01-2010 |
20100162957 | DEVICE FOR COATING A PLURALITY OF CLOSEST PACKED SUBSTRATES ARRANGED ON A SUSCEPTOR - The invention relates to a device for coating a plurality of substrates ( | 07-01-2010 |
20100162958 | SUBSTRATE PROCESSING APPARATUS AND REACTION TUBE FOR PROCESSING SUBSTRATE - There are provided a substrate processing apparatus and a reaction tube for processing a substrate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and process the substrate, a heater configured to heat the substrate, and a gas supply part configured to supply a gas to an inside of the process chamber. The process chamber comprises an alloy reaction tube made of a material comprising at least molybdenum (Mo) and cobalt (Co) but not comprising aluminum (Al). | 07-01-2010 |
20100199914 | CHEMICAL VAPOR DEPOSITION REACTOR CHAMBER - A chemical vapor deposition reactor is provided which includes a process chamber accommodating a substrate holder for multiple substrates, and a reactor gas inlet which supplies the reactant gases to a portion above the surface of the heated substrates. The reactant gases can be injected parallel or oblique to the substrates and the angle between the supplied reactant gas flow direction and the tangential component of the susceptor's angular rotation is independent of the susceptor's position. A secondary gas inlet which supplies gases perpendicular or at a sharp angle to the substrates is also included so as to change the boundary layer thickness created when hot gases come into contact with the colder reactant gases flowing parallel or oblique to the surface of the substrates. | 08-12-2010 |
20100212593 | SUBSTRATE PROCESSING APPARATUS - To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. A substrate processing apparatus comprises: a processing chamber processing substrates; a gas supply part supplying processing gas into the processing chamber; wherein the gas supply part has a gas supply nozzle disposed in the processing chamber; a filter removing impurities contained in the processing gas; and a gas supply port opened in the gas supply nozzle, for supplying into the processing chamber the processing gas from which impurities are removed by the filter. | 08-26-2010 |
20100212594 | SUBSTRATE MOUNTING MECHANISM AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - A substrate mounting mechanism on which a substrate is placed is provided. The mechanism includes a heater plate having a substrate mounting surface, and a first insertion hole having large and small diameter portions, and a temperature control jacket formed to cover at least a surface of the heater plate other than the substrate mounting surface and having a non-deposition temperature a second insertion hole having large and small diameter portions. The mechanism further includes a first lift pin having a cover inserted into the large diameter portion of the first insertion hole and a shaft inserted into both the large and small diameter portions of the first insertion hole, and a second lift pin having a cover to be inserted into the large diameter portion of the second insertion hole and a shaft to be inserted into both the large and small diameter portions of the second insertion hole. | 08-26-2010 |
20100224130 | ROTATING SUBSTRATE SUPPORT AND METHODS OF USE - A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support. | 09-09-2010 |
20100229794 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown. | 09-16-2010 |
20100229795 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus that can suppress formation of an Si thin film on the inner wall of a film-forming gas supply nozzle. The substrate processing apparatus comprises a process chamber configured to process a substrate, a heating member configured to heat the substrate, a coating gas supply member including a coating gas supply nozzle configured to supply coating gas into the process chamber, a film-forming gas supply member including a film-forming gas supply nozzle supplying film-forming gas into the process chamber, and a control unit configured to control the heating member, the coating gas supply member, and the film-forming gas supply member. The control unit executes a control such that the coating gas supply nozzle supplies the coating gas to coat a quartz member in the process chamber and the film-forming gas supply nozzle supplies the film-forming gas to form an epitaxial film on the substrate. | 09-16-2010 |
20100236480 | RAW MATERIAL GAS SUPPLY SYSTEM AND FILM FORMING APPARATUS - A raw material gas supply system ( | 09-23-2010 |
20100236481 | Preparation of Membranes Using Solvent-Less Vapor Deposition Followed by In-Situ Polymerization - A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane. | 09-23-2010 |
20100242844 | HOLDER FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT - A holder for semiconductor manufacturing equipment is provided, in which electrical leakage and sparks do not occur across the electrode terminals and lead wires to supply power to a resistive heating element embedded in a holder, and the thermal uniformity in the holder is within ±1.0%. | 09-30-2010 |
20100263594 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat. | 10-21-2010 |
20100269754 | Polycrystalline silicon reactor - A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening. | 10-28-2010 |
20100300360 | ORGANIC/INORGANIC THIN FILM DEPOSITION DEVICE AND DEPOSITION METHOD - Provided is a method for depositing an organic/inorganic thin film. The method includes: i) heating a source vessel containing an organic material and an inorganic material; ii) transferring a deposition gas to a process chamber; iii) distributing the deposition gas onto a substrate disposed in the process chamber; iv) purging the process chamber; v) heating an activating agent source vessel; vi) transferring a heat initiator gas phase to the process chamber; vii) distributing the heat initiator gas phase onto the organic or inorganic material monomer deposited on the substrate through the process chamber, and forming an organic/inorganic thin film; and viii) exhausting the heat initiator gas phase and purging the process chamber. Depositing the organic/inorganic thin film in a time-division manner, the thickness of the thin film can be accurately adjusted and the deposition can be uniformly performed when the thin film is deposited on a large-scale substrate. | 12-02-2010 |
20100307418 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio. | 12-09-2010 |
20100326358 | BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS - Provided is a batch-type Atomic Layer Deposition (ALD) apparatus for performing ALD processing collectively for a plurality of substrates, leading to an improved throughput, and achieving perfect uniformity of ALD on the substrates. The batch-type ALD apparatus includes: a chamber that can be kept in a vacuum state; a substrate support member, disposed in the chamber, supporting a plurality of substrates to be stacked one onto another with a predetermined pitch; a substrate movement device moving the substrate support member upward or downward; a gas spray device continuously spraying a gas in a direction parallel to the extending direction of each of the substrates stacked in the substrate support member; and a gas discharge device, disposed in an opposite side of the chamber to the gas spray device, sucking and evacuating the gas sprayed from the gas spray device. | 12-30-2010 |
20110073039 | SEMICONDUCTOR DEPOSITION SYSTEM AND METHOD - A novel heating method and a novel gas inject schemes for a depositing semiconductor layers on wafers with improved disposition uniformity and disposition composition, deposition rates and decreased depletion rates. The novel heating and gas design can be readily changed in size to accommodate the ever increasing demand for larger substrates, increased batch sizes and increased deposition and heating efficiencies. The heating scheme can operate to 1500° C., and has a high resolution capability for tuning the temperature and gas flows for easy of setup and improved control and repeatability of the deposition process. This novel heating and gas inject scheme in conjunction with the unconventional usage of a non-quartz process chamber promises higher throughputs and higher wafer yields and reduced manufacturing costs for the manufacturing of silicon devices, silicon solar cells and white High Brightness LEDs. | 03-31-2011 |
20110146578 | SUBSTRATE PROCESSING APPARATUS - There are provided a substrate placing plate and a substrate processing apparatus using the substrate placing plate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and perform a heat treatment on the substrate; and a substrate transfer machine configured to carry the substrate into the process chamber in a state where the substrate is placed on a substrate placing plate. The substrate placing plate comprises at least three substrate placing parts. The substrate placing parts are located on the same horizontal plane, and in a state where the substrate placing parts are located at a top side of the substrate placing plate, top surfaces of the substrate placing parts are higher than a surface of the substrate placing plate surrounded by the substrate placing parts and are higher than all peripheral surfaces of the substrate placing parts. | 06-23-2011 |
20110155061 | REACTOR, CHEMICAL VAPOR DEPOSITION REACTOR, AND METALORGANIC CHEMICAL VAPOR DEPOSITION REACTOR - A reactor for film deposition having a first heating unit and the second heating units is described. The temperature of each heating unit is controlled individually by heating and/or cooling means. The first heating unit and the second heating unit are disposed face-to-face to each other to form a reaction region therein, and their inner sides are placed with an inclined angle. At least one substrate is disposed on the inner surface of the first heating unit. The temperature of the second heating unit can be adapted to a temperature higher than the temperature of the first heating unit to improve the thermal decomposition efficiency of input reactants so that a low-temperature film deposition can be accomplished. | 06-30-2011 |
20110180001 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR | 07-28-2011 |
20110265722 | WAFER TRAY FOR CVD DEVICE, HEATING UNIT FOR CVD DEVICE AND CVD DEVICE - The present invention provides a wafer tray for a CVD device, heating unit for a CVD device provided with the wafer tray for a CVD device, and a CVD device provided with the wafer tray for a CVD device that includes a wafer tray main body provided with cavities enabling mounting of a wafer on a first surface, and a connection portion formed to project towards a second surface of the wafer tray main body. A connection indented portion is provided in the connection portion to enable detachable connection to the rotation shaft that enables rotation of the wafer tray main body. | 11-03-2011 |
20110265723 | METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS - A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The reaction chamber includes an opening. The rotation stand is disposed within the reaction chamber. The wafer susceptor is disposed on the rotation stand, and the wafer susceptor can rotate by the driving of the rotation stand. The wafer susceptor includes a plurality of polygon-shaped wafer pockets disposed on a surface of the wafer susceptor, and the polygon-shaped wafer pockets are suitable to correspondingly accommodate a plurality of wafers. The heater is disposed under the wafer susceptor and within the rotation stand. The shower head covers the opening of the reaction chamber and introduces a gaseous precursor toward the surface of the wafer susceptor. | 11-03-2011 |
20110265724 | METAL-ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS - A metal-organic chemical vapor deposition (MOCVD) apparatus is described. The MOCVD apparatus includes a reaction chamber, a rotation stand, a wafer susceptor, a heater and a shower head. The reaction chamber includes an opening. The rotation stand is disposed within the reaction chamber. The wafer susceptor is disposed on the rotation stand, and the wafer susceptor rotates by rotating of the rotation stand. The wafer susceptor includes a plurality of wafer pockets of at least two different diameters disposed on a surface of the wafer susceptor and the wafer pockets are suitable to correspondingly carry a plurality of wafers. The heater is disposed under the wafer susceptor and within the rotation stand. The shower head covers the opening of the reaction chamber and applies a gaseous precursor toward the surface of the wafer susceptor. | 11-03-2011 |
20110265725 | FILM DEPOSITION DEVICE AND SUBSTRATE PROCESSING DEVICE - A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part. | 11-03-2011 |
20110283942 | FILM FORMING APPARATUS AND GAS INJECTION MEMBER - A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processing gas toward the wafer, a main body of the shower plate being made of aluminum or an aluminum alloy. With the apparatus, a film is deposited on the surface of the wafer, the film having a low thermal expansion coefficient, measured at the film deposition temperature, lower by at least about 5×10 | 11-24-2011 |
20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plurality of support posts connecting the top plate section and the bottom section, wherein a plurality of support portions for supporting the objects to be processed are formed in each support post at a predetermined pitch along the longitudinal direction, and the distance between the topmost support portion of the support portions of each support post and the top plate section as well as the distance between the lowermost support portion of the support portions of each support post and the bottom section are set not more than the pitch of the support portions. The support structure can prevent the occurrence of a turbulent gas flow in the top and bottom areas of the processing container structure. | 12-15-2011 |
20110315082 | FILM COATING APPARATUS - A film coating apparatus for coating a patterned roller using an atomic layer deposition process includes a deposition chamber and a heater. The deposition chamber defines an inlet and an outlet. The inlet is misaligned with the outlet. The heater is received in the deposition chamber. The heater includes a number of coiled filaments each formed into a generally circular loop. The filaments are spaced from each other and surrounds the patterned roller. The filaments are configured for heating the patterned roller. | 12-29-2011 |
20120024231 | SEMICONDUCTOR GROWING APPARATUS - A semiconductor growing apparatus including: susceptor having a main face and a side face, the main face receiving a substrate for growing a semiconductor layer, and the side face having a groove; a heating element for heating the susceptor. | 02-02-2012 |
20120055403 | MOUNTING TABLE STRUCTURE, FILM FORMING APPARATUS AND RAW MATERIAL RECOVERY METHOD - Provided is a mounting table structure for use in forming a thin film on a surface of a target object mounted on the mounting table structure by using a raw material gas including an organic metal compound in a processing chamber. The mounting table structure includes: a mounting table main body which mounts thereon the target object and has therein a heater; and a base which supports the mounting table main body while surrounding a side surface and a bottom surface of the mounting table main body, the base having therein a coolant path where a coolant flows therethrough and being maintained at a temperature higher than the solidification temperature or the liquefaction temperature of the raw material gas, but lower than the decomposition temperature of the raw material gas. | 03-08-2012 |
20120055404 | APPARATUS FOR CONTINUOUS COATING - Apparatus for continuous coating has a chamber wall which forms a processing chamber, thermal insulation which forms a processing area within the chamber, a transportation device for substrates located in the processing area with a substrate transportation direction of the substrates lying in the lengthwise extension of the apparatus for continuous coating, and heating equipment which heats the substrates, is designed to minimize unwanted coating, in particular of parts of the apparatus, in order to minimize the expense of maintaining and servicing the apparatus A condensation element is positioned in the processing chamber, which extends into the processing area and binds the arising vapor through condensation. | 03-08-2012 |
20120055405 | APPARATUS AND METHOD FOR SUPPORTING, POSITIONING AND ROTATING A SUBSTRATE IN A PROCESSING CHAMBER - An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing. | 03-08-2012 |
20120055406 | Vapor Phase Deposition Apparatus and Support Table - A vapor phase deposition apparatus includes a chamber, a support table arranged in the chamber, and having a first support unit which is in contact with a back side surface of a substrate and on which the substrate is placed and a second support unit which is connected to the first support unit to support the first support unit, a heat source arranged at a position having a distance from a back side surface of the substrate, the distance being larger than a distance between back side surface of the support table and the heat source, and which heats the substrate, a first flow path configured to supply a gas to form a film into the chamber, and a second flow path configured to exhaust the gas from the chamber. | 03-08-2012 |
20120067286 | VAPOR DEPOSITION REACTOR SYSTEM AND METHODS THEREOF - Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier. | 03-22-2012 |
20120073502 | HEATER WITH LIQUID HEATING ELEMENT - A heater for a heating system of a chemical vapor deposition process includes a relatively highly emissive body and an electrically conductive heating element disposed within a passageway in the body. The heating element is constructed to melt below an operating temperature of the heater. The passageway is constructed to retain the melted heating element in a continuous path, so that an electrical current along the heating element may be maintained during operation of the heater. Various shapes and arrangements of the passageway within the body may be used, and the heating system may be constructed to provide multiple, independently controllable temperature zones. | 03-29-2012 |
20120073503 | PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER - Apparatus and systems are disclosed for processing a substrate. In an embodiment, a system includes a processing chamber, which includes a substrate support to support the substrate. The chamber further includes a plate member positioned below the substrate support and designed to improve heating efficiency within the processing chamber. The processing chamber further includes a lower dome positioned below the plate member. The plate member is designed to prevent a coating from being deposited on the lower dome during processing conditions. The plate member is designed to prevent particles and debris from falling below the plate member. The plate member is designed to improve heating uniformity between the plate member and the substrate within the processing chamber. | 03-29-2012 |
20120085285 | SEMICONDUCTOR GROWTH APPARATUS - A according to one embodiment, a semiconductor growth apparatus growing a semiconductor layer on a substrate includes a susceptor, a heater element, a gas feed unit and an auxiliary susceptor. The susceptor includes a first major surface, a second major surface and a substrate holder provided in the first major surface. The heater element heats the susceptor from the second major surface side. The gas feed unit feeds source gases of the semiconductor layer flowing along the first major surface. The auxiliary susceptor is disposed on a portion adjacent to the substrate holder on an upstream side in the source gas flow in the first major surface. | 04-12-2012 |
20120090547 | SYSTEM AND METHOD OF VAPOR DEPOSITION - Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s). | 04-19-2012 |
20120118234 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT - Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness. | 05-17-2012 |
20120132139 | APPARATUS OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - Disclosed is an apparatus ( | 05-31-2012 |
20120145080 | SUBSTRATE SUPPORT UNIT, AND APPARATUS AND METHOD FOR DEPOSITING THIN LAYER USING THE SAME - A substrate support unit includes a support member configured to accommodate a plurality of substrate holders and a driving member configured to rotate the substrate holders and the support member on their respective axes. | 06-14-2012 |
20120152170 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly. | 06-21-2012 |
20120160169 | FILM FORMING APPARATUS - Provided is a film forming apparatus for forming a polyimide film on a substrate by supplying a first raw material gas formed as aromatic acid dianhydride and a second raw material gas formed as aromatic diamine to the substrate maintained within a film forming container, and thermally polymerizing the supplied first and second raw material gases on a surface of the substrate. The apparatus includes: a substrate maintaining unit within the film forming container; a substrate heating unit configured to heat the substrate; a supply mechanism within the film forming container, configured to include a supply pipe with supply holes for supplying the first and second raw material gases to the interior of the film forming container through the supply holes; and a controller configured to control the substrate maintaining unit, the substrate heating unit, and the supply mechanism. | 06-28-2012 |
20120160170 | VAPOR PHASE GROWTH APPARATUS - Disclosed is a rotation/revolution type vapor phase growth apparatus that can maintain constant flow rates of a purge gas and a raw material gas when a raw material gas introducing direction is set to be the same as a susceptor rotation introducing direction. Inside a hollow drive shaft | 06-28-2012 |
20120174866 | APPARATUS FOR CHEMICAL VAPOR DEPOSITION - An apparatus for chemical vapor deposition is disclosed. An aspect of the present invention provides an apparatus for chemical vapor deposition that includes: a process chamber configured to demarcate a reaction space; a back plate placed above the reaction space and having a gas inlet in a middle thereof; a gas diffusion member arranged below and separated from the gas inlet and coupled to the back plate by a first coupling member and configured to diffuse process gas supplied through the gas inlet; a shower head placed below and separated from the back plate and the gas diffusion member and having a middle part thereof coupled to the gas diffusion member by a second coupling member and having a plurality of spray holes perforated therein; and a susceptor arranged below and separated from the shower head and supporting a substrate. The gas diffusion member has a plurality of gas guiding holes that vertically penetrate the gas diffusion member such that the process gas supplied through the gas inlet is diffused toward a lower side of the gas diffusion member. | 07-12-2012 |
20120192794 | SOURCE SUPPLYING APPARATUS AND FILM FORMING APPARATUS - There is provided a source supplying apparatus | 08-02-2012 |
20120204796 | CVD reactor having a substrate holder resting on a gas cushion comprising a plurality of zones - The invention relates to a CVD reactor having a process chamber ( | 08-16-2012 |
20120222620 | Atomic Layer Deposition Carousel with Continuous Rotation and Methods of Use - Provided are atomic layer deposition apparatus and methods including a rotating wheel with a plurality of substrate carriers for continuous processing of substrates. The processing chamber may have a loading station on the front end which is configured with one or more robots to load and unload substrates from the substrate carriers without needing to stop the rotating wheel. | 09-06-2012 |
20120240857 | VERTICAL HEAT TREATMENT APPARATUS - A vertical heat treatment apparatus includes a reaction tube surrounded by a heating part and including a substrate holder to hold substrates; and a process gas feed part having gas ejection openings to feed a process gas onto the substrates. The reaction tube has an exhaust opening at a position opposite to the gas ejection openings relative to the center of the reaction tube. The substrate holder includes circular holding plates stacked in layers and each having substrate placement regions; and support rods supporting the holding plates and provided in a circumferential direction of the holding plates to penetrate through the holding plates with the outside positions of the support rods being at the same radial position as the outer edges of the holding plates or at a radial position inside the outer edges of the holding plates relative to the center of the reaction tube. | 09-27-2012 |
20120260857 | HEAT TREATMENT APPARATUS - A heat treatment apparatus includes a reaction tube extending in a first direction; a substrate support unit which is placed in the reaction tube and is configured to be capable of supporting plural substrates along the first direction; plural gas supply pipes provided at a side surface of the reaction tube to be aligned in the first direction with intervals for supplying a gas into the reaction tube; a gas dispersing plate which is provided in the reaction tube between opening edges of the plural gas supply pipes and the substrate support unit placed in the reaction tube, the gas dispersing plate being provided with plural opening portions formed to correspond to the gas supply pipes, respectively; and a heater which is placed outside the reaction tube for heating the substrates. | 10-18-2012 |
20120291709 | ROTATING SUBSTRATE SUPPORT AND METHODS OF USE - A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support. | 11-22-2012 |
20120312235 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS - The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber. | 12-13-2012 |
20130019803 | METHODS AND APPARATUS FOR THE DEPOSITION OF MATERIALS ON A SUBSTRATE - Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber. | 01-24-2013 |
20130019804 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure. | 01-24-2013 |
20130047924 | SUBSTRATE PROCESSING APPARATUS AND FILM DEPOSITION APPARATUS - A substrate processing apparatus includes a process chamber; a turntable rotatably provided in the process chamber for mounting a substrate on one surface of the turntable and including a substrate mounting portion at which the substrate is to be mounted and a table body which is an other portion of the turntable, the substrate mounting portion being configured to have a heat capacity smaller than that the table body; and a heater that heats the substrate from an opposite surface side of the turntable. | 02-28-2013 |
20130055952 | REFLECTIVE DEPOSITION RINGS AND SUBSTRATE PROCESSING CHAMBERS INCORPORTING SAME - Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface. | 03-07-2013 |
20130061805 | EPITAXIAL WAFER SUSCEPTOR AND SUPPORTIVE AND ROTATIONAL CONNECTION APPARATUS MATCHING THE SUSCEPTOR - Disclosed is an epitaxial wafer susceptor and a supportive and rotational connection apparatus matching the susceptor used for an MOCVD reaction chamber. The susceptor comprises a top surface and a susceptor rotating shaft protruding downward. A vertical driving shaft is coupled to the susceptor. The driving shaft comprises a counter bore inside an upper end of the driving shaft. At least a part of the susceptor rotating shaft is inserted into the counter bore if the susceptor is loaded. The susceptor is positioned and supported in the reaction chamber via coupling and connection between a contact surface of the susceptor rotating shaft and a corresponding contact surface of the counter bore. The susceptor is driven to rotate by the driving shaft if the driving shaft rotates. Reactant gases are introduced into the reaction chamber for an epitaxial reaction or a film deposition on the epitaxial wafers placed on the susceptor. | 03-14-2013 |
20130068163 | FILM DEPOSITION APPARATUS - A film deposition apparatus includes a film deposition chamber into which a substrate is carried, a heating mechanism that heats the substrate carried into the film deposition chamber, an adhesion accelerating agent feed mechanism that feeds an adhesion accelerating agent gas into the film deposition chamber, and a control part that controls the heating mechanism and the adhesion accelerating agent feed mechanism. When depositing a polyimide film on the substrate by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the control part is configured to control the adhesion accelerating agent feed mechanism to treat a surface of the substrate with the adhesion accelerating agent gas by feeding the adhesion accelerating agent gas into the film deposition chamber until the substrate is heated to a predetermined temperature for depositing the polyimide film. | 03-21-2013 |
20130068164 | HEATING UNIT AND FILM-FORMING APPARATUS - A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10. | 03-21-2013 |
20130074773 | HEATING SYSTEMS FOR THIN FILM FORMATION - System for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component configured to rotate around a susceptor axis, and at least one substrate holder located directly or indirectly on the susceptor component and configured to support the one or more substrates. The substrate holder is further configured to cause the one or more substrates to rotate around at least the susceptor axis. Additionally, the system includes at least one heating device configured to heat the one or more substrates. Each of the one or more substrates includes a substrate surface facing the heating device and associated with a bow height, and the heating device is located away from the substrate surface by a distance. For each of the one or more substrates, the distance is at least twenty times as large as the bow height. | 03-28-2013 |
20130074774 | HEATING SYSTEMS FOR THIN FILM FORMATION - A material deposition system is provided for forming one or more layers of one or more materials on one or more substrates. The system includes a susceptor component. A plurality of substrate holders are supported on or over the susceptor component. Either the susceptor component is configured to rotate around a susceptor axis, or each substrate holder is configured to rotate about a respective holder axis, or both. Heating devices heat each substrate to a substantially constant temperature relative to a radial distance of the substrate from a central point of the susceptor component substantially only through heat convection or radiation, with comparatively little, if any, heat conduction through the susceptor component and the one or more substrate holders. | 03-28-2013 |
20130118407 | SUBSTRATE SUSCEPTOR AND DEPOSITION APPARATUS HAVING SAME - The present disclosure relates to a deposition apparatus used to manufacture a semiconductor device including a process chamber; a substrate susceptor installed in the process chamber and including a plurality of concentrically arranged stages on which substrates are positioned; a plurality of members for supplying reaction gas; a member for supplying purge gas; a spray member including a plurality of baffles for independently spraying reaction gas and purge gas, supplied from the plurality of members supplying reaction gas and the member supplying purge gas, on the entirety of the treating surfaces of the substrate, in positions corresponding respectively to the substrates positioned on the stages; and a driving unit for rotating the substrate susceptor or the spray member in order for the baffles of the spray member to sequentially revolve each of the plurality of substrates positioned on the stages. | 05-16-2013 |
20130125819 | CHEMICAL GAS DEPOSITION REACTOR - The reactor includes: a chamber having a lower wall, an upper wall and a sidewall connecting the lower wall to the upper wall; a support plate mounted inside the chamber; at least one first supply line for a first gas, and at least one separate second supply line for a second gas; a gas injection device; and a gas collector. The gas injection device includes at least one injector connected to the first supply line and at least one injector connected to the second supply line, the injectors leading into the chamber through at least one inlet provided in the sidewall; all of the injectors of the first supply line and all of the injectors of the second supply line are connected one above the other; and the collector includes at least one outlet in the sidewall, opposite the inlet relative to the support plate, and substantially at the inlet. | 05-23-2013 |
20130133580 | HIGH PRODUCTIVITY VAPOR PROCESSING SYSTEM - A processing chamber is provided. The processing chamber includes a lid having a plurality of valves affixed thereto, the plurality of valves operable to enable process gases to flow into the chamber. The chamber includes a bottom portion, where the bottom portion includes a base and side walls extending from the base. A surface of the base is configured to support a substrate. A showerhead is affixed to a bottom surface of the lid. A bottom surface of the showerhead is configured to include a central port for providing process gases into the chamber. The central port is surrounded by an annular pump channel. The annular pump channel is surrounded by an annular purge channel, where a first ridge separates the delivery region and the annular pump channel and a second ridge separates the annular pump channel and the annular purge channel. | 05-30-2013 |
20130174783 | FILM-FORMING APPARATUS - A film-forming apparatus capable of discharging a feedstock gas and a reactive gas to an inner side of the vacuum chamber by more effectively cooling the gases without mixing them in comparison with the conventional art. A discharge plate having a first face exposed inside the vacuum chamber is provided with a plurality of feedstock gas introduction holes and a plurality of reactive gas introduction holes penetrating the discharge plate. A plurality of grooves having the feedstock gas introduction holes located on the bottom face are formed in the second face opposite to the first face of the discharge plate, a top plate that covers the groove is arranged over the second face, and the feedstock gas through-hole formed in the top plate and the feedstock gas introduction hole are connected to each other with the first auxiliary pipe. | 07-11-2013 |
20130186338 | Shielding Design for Metal Gap Fill - The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage. | 07-25-2013 |
20130239894 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition (CVD) apparatus includes at least one susceptor mounted in a non-horizontal position, and at least one holder rotatably mounted on a first surface of the susceptor for holding wafers. The holder may be rotatable around a holder axis. A showerhead may be mounted at or near a center of the susceptor. The showerhead may release a reaction gas that flows radially toward a periphery of the susceptor. The holder may have a mass center that is eccentric from the holder axis to allow movement relative to the susceptor when the susceptor rotates. | 09-19-2013 |
20130247826 | APPARATUS FOR VARIABLE SUBSTRATE TEMPERATURE CONTROL - In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater. | 09-26-2013 |
20130255578 | CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SUSCEPTOR - A chemical vapor deposition (CVD) apparatus including a chamber, a susceptor in the chamber, and a heating chamber may be provided. The susceptor includes a rotor, a rotational shaft coupled to a lower portion of the rotor, a driving device coupled to the rotational shaft, and at least one pocket defined at an upper surface of the rotor. The driving device rotatably drives the rotational shaft. The at least one pocket includes a mounting portion configured to receive a substrate thereon and a protruding portion, e.g., a convex portion, protruding from a bottom surface of the at least one pocket such that the protruding portion is positioned at a region corresponding to the rotational shaft. The heating unit surrounds the rotational shaft and heats the substrate. | 10-03-2013 |
20130269614 | VAPOUR CHAMBER AND SUBSTRATE PROCESSING EQUIPMENT USING SAME - The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate. | 10-17-2013 |
20130276704 | WAFTER CARRIER FOR CHEMICAL VAPOR DEPOSITION SYSTEMS - A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket. | 10-24-2013 |
20130276705 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum chamber; a turntable rotatably provided in the vacuum chamber, on which a circular substrate is to be mounted, and provided with a circular concave portion at a front surface having a larger diameter than that of the substrate, and a circular substrate mounting portion provided in the concave portion having a diameter smaller than that of the concave portion and the substrate at a position higher than a bottom portion of the concave portion, the center of the substrate mounting portion being off center with respect to the center of the concave portion toward an outer peripheral portion side of the turntable; a process gas supplying unit which supplies a process gas to the substrate; and a vacuum evacuation mechanism which evacuates the vacuum chamber. | 10-24-2013 |
20130284095 | OPTICS FOR CONTROLLING LIGHT TRANSMITTED THROUGH A CONICAL QUARTZ DOME - Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. A plurality of lamps is positioned to provide radiant energy through an optically transparent dome to a substrate positioned on the substrate support. A light focusing assembly is positioned within the chamber to influence heating and temperature distribution on the substrate and to facilitate formation of a film on a substrate having uniform properties, such as density. The light focusing assembly can include one or more reflectors, light pipes, or refractive lenses. | 10-31-2013 |
20130284096 | COOLED REFLECTIVE ADAPTER PLATE FOR A DEPOSITION CHAMBER - In one embodiment, An adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less. | 10-31-2013 |
20130298831 | AUTOMATED PROCESS CHAMBER CLEANING IN MATERIAL DEPOSITION SYSTEMS - A cleaning carrier for in-situ cleaning of a process chamber of a material deposition tool and method for in-situ cleaning using a cleaning carrier. The cleaning carrier includes a body formed symmetrically about a central axis and having a geometry generally corresponding to the geometry of the removable wafer carrier for use with the tool, and a tool interface that facilitates mounting of the cleaning carrier body on a portion of the material deposition tool that accepts the removable wafer carrier. A set of deployable and retractable brushes are operatively coupled with the cleaning carrier body via a corresponding set of deployment and retraction mechanisms, the brushes being movable between a retracted position for handling of the cleaning carrier and a deployed position for cleaning an interior surface of the process chamber. | 11-14-2013 |
20130298832 | SUBSTRATE PROCESSING SYSTEM WITH LAMPHEAD HAVING TEMPERATURE MANAGEMENT - Apparatus for processing a substrate are provided herein. In some embodiments, a lamphead for use in substrate processing includes a monolithic member having a contoured surface; a plurality of reflector cavities disposed in the contoured surface, wherein each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for a lamp; and a plurality of lamp passages, wherein each lamp passage extends into the monolithic member from one of the plurality of reflector cavities. | 11-14-2013 |
20130305991 | SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes conveying a first substrate provided with an opposing surface having insulator regions and a semiconductor region exposed between the insulator regions and a second substrate provided with an insulator surface exposed toward the opposing surface of the first substrate, into a process chamber in a state that the second substrate is arranged in to face the opposing surface of the first substrate, and selectively forming a silicon-containing film with a flat surface at least on the semiconductor region of the opposing surface of the first substrate by heating an inside of the process chamber and supplying at least a silicon-containing gas and a chlorine-containing gas into the process chamber. | 11-21-2013 |
20140096716 | Heating/Cooling Pedestal for Semiconductor-Processing Apparatus - A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough. | 04-10-2014 |
20140102372 | WAFER CARRIER - A wafer carrier comprises a supporting body having a height and comprising an opening, wherein a bottom surface of the opening is a curved surface; and a plurality of supporting rods formed around a periphery of the supporting body. Another aspect of the present application provides a manufacturing method of the wafer carrier. The method comprises forming an epitaxial layer on a growth substrate to form a wafer structure; measuring a curvature radius of the wafer structure; and providing the wafer carrier described above in accordance with the curvature radius of the wafer structure. | 04-17-2014 |
20140116340 | EPITAXIAL GROWTH DEVICE - An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole. | 05-01-2014 |
20140130743 | FILM FORMING APPARATUS - A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member. | 05-15-2014 |
20140137800 | DEVICE FOR PRODUCING COMPOUND SEMICONDUCTOR AND WAFER RETAINER - Variations in composition in epitaxial growth of a compound semiconductor are suppressed. A wafer retainer that retains a wafer in an MOCVD device includes a carrying member that carries the wafer and a ring-like regulating member that is carried on the carrying member and regulates movement of the wafer carried on the carrying member. On a top surface of the carrying member, a wafer carrying surface for carrying the wafer and a ring carrying surface for carrying the regulating member are provided. The wafer carrying surface is formed to protrude upwardly compared to the ring carrying surface and has a convex shape in which a center portion is higher than a circumferential edge portion, and an arithmetic average roughness Ra of the wafer carrying surface is set at not more than 0.5 μm. | 05-22-2014 |
20140165915 | THERMAL RADIATION BARRIER FOR SUBSTRATE PROCESSING CHAMBER COMPONENTS - An apparatus for a substrate support heater and associated chamber components having reduced energy losses are provided. In one embodiment, a substrate support heater is provided. The substrate support heater includes a heater body having a first surface to receive a substrate and a second surface opposing the first surface, a heating element disposed in the heater body between the first surface and the second surface, and a thermal barrier disposed on the second surface of the heater body, wherein the thermal barrier comprises a first layer and a second layer disposed on the first layer. | 06-19-2014 |
20140174363 | FILM FORMING APPARATUS - A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH | 06-26-2014 |
20140174364 | HEAT TREATMENT DEVICE - A heat treatment device includes: a processing container that accommodates a plurality of substrates to be subjected to heat treatment; a substrate holding member that holds the plurality of substrates; an induction heating coil that forms an induction magnetic field inside the processing container; a high frequency power supply that applies a high frequency electric power to the induction heating coil; a gas supply mechanism that supplies a processing gas to the inside of the processing container; an exhaust mechanism that exhausts the inside of the processing container; and an induction heating element provided between the induction heating coil and the substrate holding member to enclose the substrate holding member inside the treatment container. The induction heating element is heated by an induction electric current formed by the induction magnetic field, and the substrates are heated by radiation heat from the induction heating element. The flow of the inductive electric current to the substrate is blocked by the induction heating element. | 06-26-2014 |
20140202387 | VERTICAL DIFFUSION FURNACE - A diffusion furnace includes a boat which supports a semiconductor wafer thereon and is rotatable together with the semiconductor wafer. A heater is arranged on the periphery of a core tube which houses the boat therein. The core tube includes a reaction gas supply pipe through which a reaction gas containing a dopant is supplied; and a cooling gas supply pipe through which a cooling gas is supplied toward an outer peripheral portion of the semiconductor wafer. | 07-24-2014 |
20140202388 | SHOWER HEAD UNIT AND CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus comprises a chamber, a chamber lead having a gas in port configured to receive a reaction gas, the chamber lead connected to a top surface of the chamber to seal up the chamber, a shower head connected to the chamber lead, the shower head having a plurality of spray holes separated from each other for spraying the reaction gas onto the surface of a wafer in the chamber, and a protrusion surrounding the spray holes on the bottom surface of the shower head so that an induction groove is provided inside the protrusion, wherein the plurality of spray holes have a plurality of main holes and a plurality of supplementary holes, each of the main holes is uniformly arranged in each corner of a square-grid pattern across the shower head and each of the supplementary holes is disposed at each centerpoint of the square-grid pattern. | 07-24-2014 |
20140283748 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER - A semiconductor manufacturing apparatus includes a chamber, a reaction-gas inlet, a gas exhaust port, a rotation unit, a semiconductor wafer holder, a heater, and a purge-gas inlet. The wafer holder includes a first hold region to hold the semiconductor wafer and a second hold region held by the rotation unit. The second hold region surrounds the first hold region. The level of the first hold region and the level of the second hold region differ. A plurality of ventholes is provided to the first hold region so that the ventholes are just below a sidewall of the semiconductor wafer held by the first hold region. | 09-25-2014 |
20140290578 | FILM DEPOSITION APPARATUS - In discharging a source gas from a first process gas nozzle, rectifying members including a coolant flow passage provided in a concertinaing manner therein are arranged both sides of the first process gas nozzle. Then, a coolant at a temperature higher than a liquefaction temperature of the source gas and lower than a thermal decomposition temperature of the source gas is flown through the coolant flow passage, by which the first process gas nozzle is cooled through the rectifying member. | 10-02-2014 |
20140318455 | LOW EMISSIVITY ELECTROSTATIC CHUCK - An electrostatic chuck includes a heater and an electrode disposed on the heater. The electrostatic chuck also includes an insulator layer and coating disposed on the insulator, where the coating is configured to support an electrostatic field generated by the electrode system to attract a substrate thereto. | 10-30-2014 |
20140318456 | HORIZONTAL-TYPE ATOMIC LAYER DEPOSITION APPARATUS FOR LARGE-AREA SUBSTRATES - Disclosed is a horizontal-type atomic layer deposition apparatus for large-area substrates, in which a plurality of large-area substrates can be simultaneously subjected to an atomic layer deposition process in a state in which they are stacked in a horizontal position. The apparatus comprises: an outer chamber that is maintained in a vacuum state; an inner chamber provided in the outer chamber; a chamber cover configured to move upward and downward to open and close the bottom of the inner chamber; a cassette configured to move upward and downward with the chamber cover; a process gas injecting portion configured to inject a process gas into a space between a plurality of substrates loaded in the cassette; a gas discharge portion configured to suck and discharge the process gas; and a substrate introducing/discharging means configured to introduce the substrates into the outer chamber and discharge the substrates. | 10-30-2014 |
20140318457 | METHOD OF CLEANING FILM FORMING APPARATUS AND FILM FORMING APPARATUS - A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel. | 10-30-2014 |
20140345529 | Method for Producing Semiconductor Layers and Coated Substrates Treated with Elemental Selenium and/or Sulphur, in Particular, Flat Substrates - A processing device for producing semiconductor layers and coated substrates treated with elemental selenium and/or sulphur includes an evacuable processing chamber for receiving a substrate to be processed. The substrate has a metal layer and/or a layer containing metal. A heating device provides convective heating of the substrate to a predetermined temperature. A first source of elementary selenium and/or sulphur vapor is located outside the processing chamber and connected to the processing chamber via a first feed line and/or a second source of elementary selenium and/or sulphur vapor is located inside the processing chamber. The elementary selenium and/or sulphur vapor is guided past the metal layer and/or layer containing metal, chemically reacting said layer with selenium or sulphur in a targeted manner. The substrate is heated and the elementary selenium and/or sulphur vapor is mixed and guided past the substrate by forced convection of a gas conveying device. | 11-27-2014 |
20140360430 | WAFER CARRIER HAVING THERMAL UNIFORMITY-ENHANCING FEATURES - A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (CVD), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. Each of the at least one wafer retention pocket includes a floor surface and a peripheral wall surface that surrounds the floor surface and defines a periphery of that wafer retention pocket. At least one thermal control feature includes an interior cavity or void formed in the wafer carrier body and is defined by interior surfaces of the wafer carrier body. | 12-11-2014 |
20150013608 | CERAMIC HEATER - An electrically conductive ceramic heating element for use in a reactor for depositing a film of material onto a semiconductor wafer, said reactor comprising a reactor chamber, a radiative heating device disposed within the reactor chamber including the heating element and operative for heating said wafer to a temperature of greater than 1100 degrees C., a wafer carrier disposed within the reactor chamber and adjacent to the radiative heating device, the wafer carrier having at least one wafer cavity for supporting a semiconductor wafer for having a film of material be deposited thereon. | 01-15-2015 |
20150047566 | APPARATUS FOR IMPURITY LAYERED EPITAXY - Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust. | 02-19-2015 |
20150053136 | Vertical Furnace for Improving Wafer Uniformity - A vertical furnace includes a heat treatment tube, at least one reactive gas inlet, first adiabatic plates and second adiabatic plates. The at least one reactive gas inlet is disposed at or near a bottom end of the heat treatment tube. The first adiabatic plates are stacked in the heat treatment tube, each of the first adiabatic plates having a flow channel structure for allowing a gas to pass through, in which all the corners in the flow channel structure are rounded. The second adiabatic plates are stacked below the first adiabatic plates in the heat treatment tube. | 02-26-2015 |
20150075431 | Rotating Disk Reactor With Ferrofluid Seal For Chemical Vapor Deposition - A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition. | 03-19-2015 |
20150075432 | APPARATUS TO IMPROVE SUBSTRATE TEMPERATURE UNIFORMITY - Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening. | 03-19-2015 |
20150114296 | LOW PRESSURE VAPOR PHASE DEPOSITION OF ORGANIC THIN FILMS - Methods for preparing organic thin films on substrates, the method comprising the steps of providing a plurality of organic precursors in the vapor phase, and reacting the plurality or organic precursors at a sub-atmospheric pressure. Also included are thin films made by such a method and apparatuses used to conduct such a method. The method is well-suited to the formation of organic light emitting devices and other display-related technologies. | 04-30-2015 |
20150122179 | PROCESS ROLLER FOR RECEIVING AND GUIDING SUBSTRATES IN STRIP FORM IN VACUUM COATING INSTALLATIONS - A process roller for receiving and guiding substrates in strip form in vacuum coating installations. The process roller comprises a heater located inside the process roller, in the form of an elongated radiant heater, and also a cylindrical lateral surface for receiving a substrate in strip form, the process roller being mounted rotatably about an axis of rotation in a vacuum process chamber. A particularly uniform temperature distribution can be achieved on the process roller's lateral surface by the process roller ( | 05-07-2015 |
20150136026 | APPARATUS FOR PROCESSING SUBSTRATE - Provided is a substrate processing apparatus. The substrate processing apparatus in which a process with respect to a substrate is performed includes a main chamber having a passage that is defined in one sidewall thereof to load or unload the substrate and upper and lower openings that are respectively defined in upper and lower portions thereof, a chamber cover closing the upper opening of the main chamber to provide a process space that is blocked from the outside to perform the process, a showerhead disposed in the process space, the showerhead having a plurality of spray holes that spray a process gas, a lower heating block on which the substrate is placed on an upper portion thereof, the lower heating block being fixed to the lower opening and having a lower installation space separated from the process space, and a plurality of lower heaters disposed in the lower installation space in a direction parallel to the substrate to heat the lower heating block. | 05-21-2015 |
20150136027 | TRAP ASSEMBLY IN FILM FORMING APPARATUS - A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. The plurality of trap units are arranged successively along a flow direction of said exhaust gas. Each trap unit includes a set of trap panels parallel to each other and spaced apart from each other. The two opposite surfaces with a larger area of each trap panel are oriented substantially parallel to a flow direction of the exhaust gas flow. The two opposite surfaces with a smaller area of each trap panels are oriented orthogonal to the exhaust gas flow. | 05-21-2015 |
20150144062 | VAPOR DEPOSITION AND VAPOR DEPOSITION METHOD - A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles. | 05-28-2015 |
20150329967 | FILM-FORMING MANUFACTURING APPARATUS AND METHOD - It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters. | 11-19-2015 |
20150340254 | WAFER HOLDER AND DEPOSITION APPARATUS - According to an embodiment, a wafer holder includes a heat receiving portion, a heating portion, and a contact making portion. The heat receiving portion receives heat from a heat source. The heating portion heats a wafer using the heat received by the heat receiving portion. The contact making portion makes contact with an outer edge of the wafer. A heat-transfer suppressing portion is provided at least either for the contact making portion, or in between the heat receiving portion and the contact making portion, or in between the heating portion and the contact making portion. | 11-26-2015 |
20150345023 | WINDOW COOLING USING COMPLIANT MATERIAL - Embodiments described herein generally relate to apparatus for processing substrates. The apparatus generally include a process chamber including a lamp housing containing lamps positioned adjacent to an optically transparent window. Lamps within the lamp housing provide radiant energy to a substrate positioned on the substrate support. Temperature control of the optically transparent window is facilitated using cooling channels within the lamp housing. The lamp housing is thermally coupled to the optically transparent window using compliant conductors. The compliant conductors maintain a uniform conduction length irrespective of machining tolerances of the optically transparent window and the lamp housing. The uniform conduction length promotes accurate temperature control. Because the length of the compliant conductors is uniform irrespective of machining tolerances of chamber components, the conduction length is the same for different process chambers. Thus, temperature control amongst multiple process chambers is uniform, reducing chamber-to-chamber variation. | 12-03-2015 |
20150345046 | FILM-FORMING DEVICE - A CVD device equipped with a container chamber ( | 12-03-2015 |
20160002778 | SUBSTRATE SUPPORT WITH MORE UNIFORM EDGE PURGE - Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first plate for supporting a substrate, the first plate having a plurality of purge gas channels on its backside; a second plate disposed beneath and supporting the first plate; and an edge ring surrounding the first plate and disposed above the second plate, wherein the plurality of purge gas channels extend from a single inlet in a central portion to a plurality of outlets at a periphery of the first plate, and wherein the plurality of purge gas channels have a substantially equal flow conductance. | 01-07-2016 |
20160032456 | AZIMUTHAL MIXER - An azimuthal mixer component that may be plumbed in-line with a showerhead stem tube of a semiconductor processing apparatus is provided. The azimuthal mixer may include a main passage that is coaxial with the stem tube, and one or more plenums that partially or wholly encircle the main passage. Corresponding sets of radial passages may fluidically connect the main passage with each of the plenums. | 02-04-2016 |
20160047033 | LINEAR EVAPORATION APPARATUS FOR IMPROVING UNIFORMITY OF THIN FILMS AND UTILIZATION OF EVAPORATION MATERIALS - A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials. | 02-18-2016 |
20160049317 | SUBSTRATE SUPPORTING UNIT, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE SUPPORTING UNIT - A substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit are provided. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; a heat dissipating member including a contact surface being in thermal contact with the second temperature region; and a reflecting member disposed approximately in parallel with one surface of the susceptor to reflect heat emitted from the susceptor toward the susceptor. | 02-18-2016 |
20160060756 | CHEMICAL VAPOR DEPOSITION APPARATUS - A CVD apparatus includes a process chamber, a susceptor, an auxiliary supporting part, a gas spray part, and a shadow frame. The susceptor may be in the process chamber to support and heat a mother substrate. The auxiliary supporting part may be mounted on the susceptor in a tetragonal frame form to support and heat an edge of the mother substrate supported by the susceptor. The gas spray part may be in the process chamber to face the susceptor and may spray a process gas to the mother substrate. The shadow frame may cover an edge of the auxiliary supporting part and an edge of the susceptor extending from the edge of the auxiliary supporting part. | 03-03-2016 |
20160064268 | Wafer Susceptor with Improved Thermal Characteristics - A substrate-retaining device with improved thermal uniformity is provided. In an exemplary embodiment, the substrate-retaining device includes a substantially circular first surface with a defined perimeter, a plurality of contact regions disposed at the perimeter, and a plurality of noncontact regions also disposed at the perimeter. The contact regions are interspersed with the noncontact regions. Within each of the noncontact regions, the first surface extends past where the first surface ends within each of the contact regions. In some such embodiments, each region of the plurality of contact regions includes a contact surface disposed above the first surface. | 03-03-2016 |
20160068958 | Lamp Heater For Atomic Layer Deposition - Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating. | 03-10-2016 |
20160083837 | Film Formation Device - A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed. | 03-24-2016 |
20160083841 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF FABRICATING SUBSTRATE LOADING UNIT - A substrate processing apparatus includes a process chamber in which etching by a corrosive gas is performed to remove a film formed therein after a film formation process, a susceptor disposed in the process chamber and having a substrate loading portion, a stationary shaft passing through the susceptor, a first securing member securing the susceptor at an upper side, a second securing member securing the susceptor at a lower side, a pressing member disposed below the susceptor to urge the stationary shaft in a downward direction while urging the second securing member in an upward direction, and a stopping member formed above the susceptor and engaged with the stationary shaft to urge the first securing member in cooperation with the pressing member. The susceptor, the first securing member and the stopping member are made of a material having corrosion resistance higher than the pressing member. | 03-24-2016 |
20160097122 | TOP LAMP MODULE FOR CAROUSEL DEPOSITION CHAMBER - A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described. | 04-07-2016 |
20160097143 | Axial Gradient Transport (AGT) Growth Process and Apparatus Utilizing Resistive Heating - A crucible has a first resistance heater is disposed in spaced relation above the top of the crucible and a second resistance heater with a first resistive section disposed in spaced relation beneath the bottom of the crucible and with a second resistive section disposed in spaced relation around the outside of the side of the crucible. The crucible is charged with a seed crystal at the top of an interior of the crucible and a source material in the interior of the crucible in spaced relation between the seed crystal and the bottom of the crucible. Electrical power of a sufficient extent is applied to the first and second resistance heaters to create in the interior of the crucible a temperature gradient of sufficient temperature to cause the source material to sublimate and condense on the seed crystal thereby forming a growing crystal. | 04-07-2016 |
20160115623 | WAFER CARRIER AND EPITAXIAL GROWTH DEVICE USING SAME - Provided is a wafer carrier with which it is unlikely that particles will be generated from a connection hole that is a connection section for connecting with a spindle, and even if particles are generated, the particles will be unlikely to spread and can be easily removed. Also provided is an epitaxial growth device using the wafer carrier. The wafer carrier comprises the following: an upper surface having at least one cavity for holding a wafer; a lower surface having in the center thereof a connection hole into which the upper end of a rotation spindle is removably inserted; and an outer circumferential part for linking the upper surface and the lower surface. The connection hole has a through hole and is formed by a tapered wall surface that increases in size from the upper surface side towards the lower surface side. | 04-28-2016 |
20160172220 | SELENIZATION PROCESS APPARATUS FOR GLASS SUBSTRATE | 06-16-2016 |
20160251750 | An evaporating crucible and an evaporating device | 09-01-2016 |
20160251751 | EVAPORATION COATING APPARATUS | 09-01-2016 |
20160251752 | LINEAR EVAPORATION SOURCE | 09-01-2016 |
20170233864 | METAL DEPOSITION SOURCE ASSEMBLY AND DEPOSITING APPARATUS INCLUDING THE SAME | 08-17-2017 |
20170233869 | Reaction Chamber For Chemical Vapor Apparatus | 08-17-2017 |