Entries |
Document | Title | Date |
20080196667 | EVAPORATION DEVICE FOR EVAPORATING VAPOR DEPOSITION MATERIALS - An evaporation device for evaporating vapor deposition materials by heating is disclosed. The evaporation device includes deposition vessels each containing a different vapor deposition material, a heating unit for heating the vapor deposition materials contained in the deposition vessels, and a common opening area including a common opening, through which the vapor deposition materials evaporated in the deposition vessels exit together. | 08-21-2008 |
20080202424 | Device For Introducing Reaction Gases Into A Reaction Chamber And Epitaxial Reactor Which Uses Said Device - The present invention relates to a device ( | 08-28-2008 |
20080202425 | TEMPERATURE CONTROLLED LID ASSEMBLY FOR TUNGSTEN NITRIDE DEPOSITION - Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes. | 08-28-2008 |
20080236495 | Showerhead for chemical vapor deposition (CVD) apparatus - A reactant vapor distribution assembly for Chemical Vapor Deposition (CVD) apparatus which includes an upper flange which has a plenum disposed on its lower face and vapor injectors for injecting reactant vapors into the plenum. The distribution assembly also includes a lower flange having a peripheral rim surrounding a lower wall and a plenum on its upper face, certain of the vapor injectors are used to inject reactant vapors into this plenum. The lower flange includes fluid channels bored in the lower wall beneath the plenum and a number of gas flow openings bored in the lower wall of the lower flange to permit the precursor gases to flow from the plenum into the deposition chamber. The fluid channels may be used to heat or cool the flange. The lower flange has no welds or joints facing the hostile environment of the deposition chamber and all critical parts of the lower flange may be formed from a single billet of material. | 10-02-2008 |
20080245300 | APPARATUS AND METHOD FOR CONTINUOUSLY COATING STRIP SUBSTRATES - A device and a method for coating of a sheet-like substrate that can be moved with respect to an evaporator bench in a running direction, whereby the evaporator bench has a number of heatable evaporator boats arranged directly adjacent to each other in the evaporator bench and their longitudinal axes enclose an angle with respect to the running direction, whose absolute value lies between 1° and 89°, and whereby the device has an arrangement for supplying wire of a material being evaporated to the evaporator boats, where the evaporator boats are arranged alternating next to each other, so that an evaporator boat, whose longitudinal axis is rotated counterclockwise with respect to the running direction is situated next to an evaporator boat, whose longitudinal axis is rotated clockwise with respect to the running direction. | 10-09-2008 |
20080245301 | Deposition Apparatuses - The invention includes deposition methods and apparatuses which can be utilized during atomic layer deposition or chemical vapor deposition. A heated surface is provided between a stack of semiconductor substrates and a precursor inlet, and configured so that problematic side reactions occur proximate the heated surface rather than proximate the semiconductor substrates. The precursor inlet can be one of a plurality of precursor inlets, and the heated surface can be one of a plurality of heated surfaces. | 10-09-2008 |
20080245302 | SIMPLE CHEMICAL VAPOR DEPOSITION SYSTEMS FOR DEPOSITING MULTIPLE-METAL ALUMINIDE COATINGS - A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating is provided as a first vapor phase reactant from a receptacle coupled by a closed communication path with the reaction chamber of the CVD system and free of a carrier gas. The aluminide coating is formed by the chemical combination of the first vapor phase reactant with a second vapor phase reactant either created in situ in the reaction chamber or supplied by a carrier gas to the reaction chamber from a precursor source. | 10-09-2008 |
20090038548 | SUBSTRATE TREATING APPARATUS AND TREATING GAS EMITTING MECHANISM - A film forming apparatus includes a process chamber | 02-12-2009 |
20090064935 | CVD REACTOR HAVING A PROCESS-CHAMBER CEILING WHICH CAN BE LOWERED - The invention relates to an apparatus for the deposition of one or more layers on a substrate ( | 03-12-2009 |
20090071406 | COOLED BACKING PLATE - A plasma enhanced chemical vapor deposition chamber (PECVD) which includes a backing plate that provides support to a diffuser. The backing plate includes a plurality of fluid conduits adapted for circulation of a cooling fluid therethrough to remove excess heat generated in the chamber by the plasma to thereby maintain the backing plate in a stable condition thereby maintaining the diffuser in a stable position during the deposition of material from the plasma. | 03-19-2009 |
20090114155 | PROCESSING APPARATUS, EXHAUST PROCESSING PROCESS AND PLASMA PROCESSING PROCESS - There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film). | 05-07-2009 |
20090151639 | Gas processing apparatus and gas processing method - A gas processing apparatus | 06-18-2009 |
20090159006 | THIN FILM PRODUCTION APPARATUS AND INNER BLOCK FOR THIN FILM PRODUCTION APPARATUS - Provided is a thin film production apparatus that enables cost reduction and improvement of deposition efficiency by employing a common component. In a thin film production apparatus according to the present invention, a volume of a reaction space is optimized by determining the volume of the reaction space with an inner block disposed inside a vacuum tank, that is, by merely altering a size of an inner diameter of the inner block without altering a size of the vacuum tank. Accordingly, film formation on plural kinds of substrates having different sizes becomes possible using the common vacuum tank. Further, increase of the number of apparatus structural components to be prepared for each size of the substrate to be processed can be minimized, whereby the cost of the components can be reduced, and, while simplifying assembling operation, product inspection operation, and adjusting operation, excellent deposition efficiency and stable film formation can be realized. | 06-25-2009 |
20090165717 | GAS INJECTION UNIT AND THIN FILM DEPOSITION APPARATUS HAVING THE SAME - A gas injection unit and a thin film deposition apparatus having the gas injection unit are provided. Since a variety of different kinds of organic materials can be sequentially vaporized and injected by a single injection unit, a variety of different kinds of thin films can be deposited in a single chamber. Furthermore, the gas injection structure of the injector unit can be easily controlled. Therefore, even when the process conditions such as the size of the substrate, the process temperature of the chamber, and the like are altered, it becomes possible to actively response to the altered process conditions by simply replacing some parts without replacing the whole injector unit. | 07-02-2009 |
20090165718 | GAS INJECTOR AND FILM DEPOSITION APPARATUS HAVING THE SAME - Provided are a gas injector and a film deposition apparatus having the same. The gas injector includes a body, a supply hole, an injection hole, and a distribution plate. The body is configured to provide an inner space therein. The supply hole is formed in an upper surface of the body to communicate with the inner space and receive a raw material. The injection hole is formed in a lower surface of the body to communicate with the inner space and inject the raw material. The distribution plate is disposed in the inner space of the body. A through hole is formed in the distribution plate. The distribution plate is disposed to be inclined at a predetermined angle with respect to a horizontal plane. The gas injector can uniformly inject the raw material and improve vaporization efficiency of the raw material having a powder form. | 07-02-2009 |
20090183682 | SOURCE CONTAINER OF A VPE REACTOR - The invention relates to a source arrangement of a VPE deposition device, comprising a container ( | 07-23-2009 |
20090250005 | REACTION TUBE AND HEAT PROCESSING APPARATUS FOR A SEMICONDUCTOR PROCESS - A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall. | 10-08-2009 |
20090255469 | APPARATUS AND METHODS FOR MANUFACTURING THIN-FILM SOLAR CELLS - Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web. | 10-15-2009 |
20090277386 | CATALYTIC CHEMICAL VAPOR DEPOSITION APPARATUS - A catalytic chemical vapor deposition apparatus is provided for producing a thin film of desired film quality, by making a particle countermeasure against the release gas such as H | 11-12-2009 |
20090283040 | DEVICE FOR TEMPERATURE-CONTROLLED ACCOMMODATION OF A CONTAINER - The invention relates to a device for the tempered storage of a container ( | 11-19-2009 |
20090314209 | SUSCEPTOR AND SEMICONDUCTOR MANUFACTURING APPARATUS INCLUDING THE SAME - A susceptor and a semiconductor manufacturing apparatus including the same are provided. A wafer is loaded on a susceptor and the susceptor includes at least one pocket whose bottom surface is inclined. The semiconductor manufacturing apparatus includes a reaction chamber, a heating unit that generates heat in the reaction chamber, a susceptor on which a wafer is loaded and that includes at least one pocket whose bottom surface is inclined, and a rotation shaft coupled with the susceptor. | 12-24-2009 |
20100000469 | DEPOSITION APPARATUS FOR ORGANIC EL AND EVAPORATING APPARATUS - Provided is a deposition apparatus for organic EL capable of allowing vapor of a film forming material to be vapor deposited on a target object to be uniformly heated. A deposition apparatus, which performs a film forming process by vapor depositing a film forming material on a target object in a depressurized processing chamber, includes an evaporating head having a vapor discharge opening, disposed in the processing chamber, for discharging vapor of the film forming material. Inside the evaporating head, provided is a heater receiving member which is sealed with respect to an inside of the processing chamber, and installed is a communication path which allows the heater receiving member to communicate with an outside of the processing chamber. A power supply line for a heater received in the heater receiving member is disposed in the communication path and extended to the outside of the processing chamber. | 01-07-2010 |
20100024732 | Systems for Flash Heating in Atomic Layer Deposition - System and methods for flash heating of materials deposited using atomic layer deposition techniques are disclosed. By flash heating the surface of the deposited material after each or every few deposition cycles, contaminants such as un-reacted precursors and byproducts can be released from the deposited material. A higher quality material is deposited by reducing the incorporation of impurities. A flash heating source is capable of quickly raising the temperature of the surface of a deposited material without substantially raising the temperature of the bulk of the substrate on which the material is being deposited. Because the temperature of the bulk of the substrate is not significantly raised, the bulk acts like a heat sink to aid in cooling the surface after flash heating. In this manner, processing times are not significantly increased in order to allow the surface temperature to reach a suitably low temperature for deposition. | 02-04-2010 |
20100031887 | Supply Device - A device for supplying a large number of consumer stations with a predetermined amount of a process medium, in particular a coating device for containers, has a supply line for the process medium and a connection at the consumer station. In order to make such a device simpler from the structural point of view and less expensive, a unit is used, which keeps a predetermined flow rate constant and which comprises a capillary path extending before each connection and dimensioned in accordance with the predetennined amount of process medium, and a unit which is associated with a plurality of connections and which is used for maintaining a defined flow velocity along the capillary path. | 02-11-2010 |
20100037825 | DIFFERENTIATED-TEMPERATURE REACTION CHAMBER - The present invention relates to a reaction chamber ( | 02-18-2010 |
20100043709 | CHEMICAL VAPOR DEPOSITION APPARATUS FOR EQUALIZING HEATING TEMPERATURE - Disclosed is a chemical vapor deposition apparatus for equalizing a heating temperature, which maintains the heating temperature of a heater provided therein uniform not only on the lower surface of the heater but also on the upper surface thereof, so that a thin film having a uniform thickness is deposited on a wafer. In order to maintain the heating temperature of the heater of the chemical vapor deposition apparatus uniform, the chemical vapor deposition apparatus includes a thermal insulation reflecting plate for reflecting heat from the lower surface of the heater and a heat dissipation member disposed between the thermal insulation reflecting plate and the heater to be in direct contact with the area of the heater having a high temperature, or includes a heat dissipation member mounted underneath the area of the heater having a high temperature. Also, the apparatus includes a depression having a predetermined shape in the surface of the area of the heater having a relatively high temperature coming into direct contact with a wafer, and further includes a heat dissipation member disposed between the thermal insulation reflecting plate and the heater to be in contact with the area of the heater having a high temperature to thus decrease reflected heat, thereby equalizing the temperatures of the upper and lower surfaces of the heater. | 02-25-2010 |
20100064972 | CVD FILM FORMING APPARATUS - A CVD film forming apparatus for forming a predetermined film on a target substrate via CVD by reacting a film forming gas on a surface of the substrate while heating the substrate includes a processing chamber capable of being maintained at vacuum, and a stage for mounting thereon the substrate in the processing chamber, the stage having a diameter larger than that of the substrate. Further, the CVD film forming apparatus includes a heating device provided in the stage to heat the substrate, a gas supply unit for supplying the film forming gas into the processing chamber, a gas exhaust device for exhausting the processing chamber to vacuum, and a covering for covering a peripheral region of the stage that surrounds the substrate mounted on the stage to reduce thermal effects from the stage to a peripheral portion of the substrate. | 03-18-2010 |
20100107981 | APPARATUS FOR FABRICATING DISPLAY DEVICE - A fabrication apparatus of a display that is adaptive for improving reliability is disclosed. The fabrication apparatus of a display device includes a chamber for vacuum heating; a hot plate disposed on the inside of the chamber; a plurality of external pipes that are disposed on the outside of the chamber, and to which vent gas for converting the atmospheric pressure of the inside of the chamber, which is in a vacuum state, into the atmospheric pressure of the outside is supplied; a gas outlet tube, which is extended from the external pipe and disposed on the inner side surface of the chamber in order to discharge the vent gas; and a gas heating part which is disposed on each of the external pipe and heats up the vent gas supplied from the outside. | 05-06-2010 |
20100122658 | METERING OF PARTICULATE MATERIAL AND VAPORIZATION THEREOF - Apparatus for metering and vaporizing a particulate material, includes: a metering device having: a reservoir for receiving particulate material; a housing having an internal volume and having first and second openings; a rotatable shaft disposed in the internal volume, the shaft having a smooth surface and a circumferential groove; a rotating agitator with a plurality of tines disposed in the reservoir and cooperating with the rotating shaft for fluidizing particulate material and transporting it from the reservoir into the groove; cooperating such that particulate material is transported by the groove; a scraper cooperates with the groove to dislodge particulate material retained therein, and deliver metered amounts of particulate material through the second opening; the rotatable shaft and the scraper cooperates to fluidize the particulate material at the second opening; and a flash evaporator that flash vaporizes the received particulate material. | 05-20-2010 |
20100154710 | IN-VACUUM DEPOSITION OF ORGANIC MATERIALS - Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices. | 06-24-2010 |
20100206233 | Device and Method for Vaporizing Temperature Sensitive Materials - A device vaporizes organic materials onto a substrate surface to form a film. The device includes a vaporization apparatus to receive a quantity of organic material that can have one or more components each having a different vaporization temperature, the vaporization apparatus having a first region and a second region spaced from the first region; a cooling unit to actively cool the organic material in the first region so that each of the one or more organic components is maintained well below its vaporization temperature to reduce degradation of the organic material; heating unit to heat the second region of the vaporization apparatus above the vaporization temperature of each of the one or more organic components; and a metering unit having a permeable member to meter organic material at a controlled rate from the first region into the second region so that a thin cross section of the organic material is heated at a desired rate-dependent vaporization temperature, whereby organic material vaporizes and forms a film on the substrate surface. | 08-19-2010 |
20100218723 | Molecular Beam Cell Having Purge Function - A molecular beam cell includes a crucible ( | 09-02-2010 |
20100218724 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The apparatus comprises: a process chamber configured to accommodate substrates which are horizontally oriented and stacked in multiple stages and process the substrates; a process gas supply unit configured to supply a process gas to the process chamber; an inert gas supply unit configured to supply an inert gas to the process chamber; and an exhaust unit configured to exhaust the process chamber. The process gas supply unit comprises a process gas supply nozzle. The inert gas supply unit comprises inert gas supply nozzles disposed at both sides of the process gas supply nozzle. Each of the inert gas supply nozzles comprises at least one first inert gas ejection hole formed in a region where the substrates are stacked and at least one second inert gas ejection hole formed in a region where the substrates are not stacked. | 09-02-2010 |
20100258053 | APPARATUS FOR DELIVERING PRECURSOR GASES TO AN EPITAXIAL GROWTH SUBSTRATE - This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN. | 10-14-2010 |
20100300359 | MULTI-GAS DISTRIBUTION INJECTOR FOR CHEMICAL VAPOR DEPOSITION REACTORS - A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial. | 12-02-2010 |
20100307416 | Chemical Vapor Deposition Apparatus - A chemical vapor deposition apparatus is disclosed, which is capable of improving the yield by an extension of a cleaning cycle, the chemical vapor deposition apparatus comprising a chamber with a substrate-supporting member for supporting a substrate; a chamber lid with plural first source supplying holes, the chamber lid installed over the chamber; plural source supplying pipes for supplying a process source to the plural first source supplying holes; a spraying-pipe supporting member with plural second source supplying holes corresponding to the plural first source supplying holes, the spraying-pipe supporting member detachably installed in the chamber lid; and plural source spraying pipes with plural third source supplying holes and plural source spraying holes, the plural source spraying pipes supported by the spraying-pipe supporting member, wherein the plural third source supplying holes are supplied with the process source through the plural second source supplying holes, and the plural source spraying holes are provided to spray the process source onto the substrate. | 12-09-2010 |
20100307417 | Manufacturing device for silicon carbide single crystal - A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle. | 12-09-2010 |
20100326357 | NOZZLE AND FURNACE HAVING THE SAME - A nozzle and a furnace having the same are provided. The furnace has a high vacuum fitting used to assemble the nozzle to the furnace. The nozzle includes a first tube part and a second tube part connecting to the first tube part. In addition, an immobilization device is disposed on a surface of the first tube part. The immobilization device is corresponding to an o-ring of the high vacuum fitting and sheathed by the o-ring to steadily immobilize the nozzle to the furnace. | 12-30-2010 |
20110000434 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A carbon film deposition apparatus includes an evaporator for evaporating an oxygen-containing hydrocarbon. The carbon film deposition apparatus also includes a gas inlet pipe for introducing the oxygen-containing hydrocarbon gas evaporated in the evaporator. The carbon film deposition apparatus further includes a deposition furnace for depositing a carbon protection film over all surfaces of a wafer by pyrolyzing the oxygen-containing hydrocarbon gas introduced through the gas inlet pipe. | 01-06-2011 |
20110017140 | METHOD OF TREATING A GAS STREAM - A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited. | 01-27-2011 |
20110023782 | GAS INJECTION UNIT FOR CHEMICAL VAPOR DESPOSITION APPARATUS - A gas injection unit allows uniform cooling thereof via smooth flow of coolant and can be easily manufactured. The gas injection unit for a chemical vapor deposition apparatus includes, inter alia: a gas distribution housing; a cooling housing positioned between the gas distribution housing and a processing chamber where a deposition process is performed, and formed with a coolant inlet through which coolant is introduced, and a coolant outlet through which the coolant is discharged; a processing gas pipe of which one end is opened to the gas distribution housing and the other end is opened to the processing chamber, the processing gas pipe penetrating the cooling housing; and a first wall part positioned inside the cooling housing such that an inside of the cooling housing is partitioned into a central path and a peripheral path, and formed with a penetration hole such that the central path communicates with the peripheral path. | 02-03-2011 |
20110041767 | METAL CAPTURING APPARATUS AND ATOMIC LAYER DEPOSITION APPARATUS HAVING THE SAME - A metal capturing apparatus and an atomic layer deposition apparatus, which are capable of discharging an exhaust gas from a process chamber, in which a metal atomic layer is deposited on a substrate using a reaction gas containing a metal catalyst, without a scrubber, and easily reusing the metal catalyst contained in the exhaust gas. The metal capturing apparatus includes a capturing chamber having a capturing space, a capturing plate disposed at one side of the capturing chamber and partially inserted into the capturing chamber, a refrigerant source feeding a refrigerant cooling the capturing plate, and an attachment unit attaching the capturing plate to the capturing chamber. The atomic layer deposition apparatus includes a process chamber, a vacuum pump connected to an exhaust port of the process chamber, and a metal capturing apparatus disposed between the process chamber and the vacuum pump. | 02-24-2011 |
20110061595 | High temperature gas heating device for a vapor deposition system - A gas heating device that may be used in a system for depositing a thin film on a substrate using a vapor deposition process is described. The gas heating device may be configured for heating one or more constituents of a film forming composition. The gas heating device comprises one or more resistive heating elements. Additionally, the gas heating device comprises a mounting structure configured to support at least one of the one or more resistive heating elements. Furthermore, the gas heating device comprises a static mounting device coupled to the mounting structure and configured to fixedly couple the at least one of the one or more resistive heating elements to the mounting structure, and a dynamic mounting device coupled to the mounting structure and configured to automatically compensate for changes in a length of the at least one of the one or more resistive heating elements. Further yet, the dynamic mounting device comprises a thermal break configured to reduce heat transfer between the dynamic mounting device and the mounting structure. | 03-17-2011 |
20110107970 | HEATING UNIT AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME - A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber. | 05-12-2011 |
20110114022 | WAFER CARRIER WITH HUB - A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate. The wafer carrier also preferably includes a gas flow facilitating element on the upstream surface of the plate in the central region of the plate. The gas flow facilitating element helps redirect the flow of incident gases along the upstream surface and away from a flow discontinuity in the central region. | 05-19-2011 |
20110185973 | CHEMICAL VAPOR DEPOSITION REACTOR FOR DEPOSITING LAYERS MADE OF A REACTION GAS MIXTURE ONTO WORKPIECES - The invention relates to a CVD-reactor for depositing layers made of a reaction gas onto workpieces. Said reactor comprises an elongate, vertical reaction chamber that is defined by a reactor wall and a reactor base, an inlet line for guiding the reaction gas into the reaction chamber, entering into the region of the reactor base in the reaction chamber, a central outlet line that guides the used reaction gas out of the reaction chamber and that extends out of the reactor chamber in the region of the reactor base, a tier-like workpiece receiving element that is arranged in a central manner in the reaction chamber and can be rotated about the central axis thereof. | 08-04-2011 |
20110226181 | FILM FORMING APPARATUS - Disclosed is a film forming apparatus to form a thin film on a surface of an object to be processed by using a raw material gas including an organometallic compound includes; a processing container to carry out vacuum exhaustion; a placing table having a heater; and a gas introduction mechanism having a plurality of decomposition promoting gas introduction holes facing the placing table, and raw material gas introduction holes, wherein the decomposition promoting gas introduction holes being disposed while facing the object to be processed on the placing table in order to introduce a decomposition promoting gas to promote decomposition of the raw material gas, and the raw material gas introduction holes being disposed while surrounding a formation area of the plurality of decomposition promoting gas introduction holes in order to introduce the raw material gas. | 09-22-2011 |
20110232573 | Catalytic Chemical Vapor Deposition Apparatus - [Object] To provide a catalytic chemical vapor deposition apparatus capable of prolonging the service life of a catalyst wire. | 09-29-2011 |
20110247560 | SUBSTRATE PROCESSING APPARATUS - A disclosed substrate processing apparatus comprises a reaction chamber; a substrate supporting portion that is provided in the reaction chamber and configured to support a substrate; and plural catalyst reaction portions that are arranged in the reaction chamber in order to oppose the substrate supporting portion, and configured to produce a reaction gas by allowing a source gas introduced from a gas introduction portion to contact a catalyst and to eject the reaction gas to an inner space of the reaction chamber, thereby processing the substrate supported by the substrate supporting portion with the ejected reaction gas. | 10-13-2011 |
20110247561 | Thermal Chemical Vapor Deposition Methods, and Thermal Chemical Vapor Deposition Systems - One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate. | 10-13-2011 |
20110290185 | SUBSTRATE COOLING DEVICE AND SUBSTRATE TREATMENT SYSTEM - A substrate cooling device configured to cool a substrate after a treatment, the device includes: a housing having a space configured to house a substrate internally; a pair of holder sections provided so as to face an inner wall of the housing, and including a groove section supporting an end neighborhood of the substrate; and a pair of cooling sections including a cooling mechanism provided to sandwich the pair of holder sections in a direction crossing a direction in which the holder sections face each other. According to the invention, a time for cooling the substrate after the treatment can be reduced. | 12-01-2011 |
20110290186 | METHOD AND DEVICE FOR PRODUCING AND PROCESSING LAYERS OF SUBSTRATES UNDER A DEFINED PROCESSING ATMOSPHERE - A method is provided for producing a processing atmosphere for coating substrates, with this method primarily being used in CVD-processes for precipitating an individual layer or a system of individual layers under defined processing atmospheres, in which processing gas is supplied to a coating chamber in a defined manner and exhausted. Via the method and related devices, a variable processing atmosphere is adjustable inside the coating chamber in a flexible, reliable and homogenous manner, and requiring a reduced maintenance and energy expense, even when the substrate is heated. The processing gas is created by at least one gas channel extending perpendicular in reference to the substrate by way of supplying gas flow or exhausting, with a lateral extension being equivalent to the width of the substrate. | 12-01-2011 |
20110308462 | APPARATUS FOR PRODUCING ALIGNED CARBON NANOTUBE AGGREGATES - An apparatus of the present invention for producing aligned carbon nanotube aggregates is an apparatus for producing aligned carbon nanotube aggregates, the apparatus being configured to grow the aligned carbon nanotube aggregate by: causing a catalyst formed on a surface of a substrate to be surrounded by a reducing gas environment constituted by a reducing gas; heating at least either the catalyst or the reducing gas; causing the catalyst to be surrounded by a raw material gas environment constituted by a raw material gas; and heating at least either the catalyst or the raw material gas, at least either an apparatus component exposed to the reducing gas or an apparatus component exposed to the raw material gas being made from a heat-resistant alloy, and having a surface plated with molten aluminum. | 12-22-2011 |
20110308463 | CHEMICAL VAPOR DEPOSITION REACTOR WITH ISOLATED SEQUENTIAL PROCESSING ZONES - A chemical vapor deposition reactor and system has a housing, a substrate transport apparatus and a plurality of fixed processing zones. The processing zones include one or more chemical vapor deposition zones, each having an independent reactant gas supply. Each chemical vapor deposition zone may have a respective showerhead. The substrate transport apparatus moves the substrate along a path from the entrance of the housing to the exit of the housing, passing sequentially through each of the processing zones. A respective isolation zone between neighboring processing zones functions to prevent mixing of gases between the processing zones. The isolation zone has a gas dual flow path directing gas flows in opposing directions. The isolation zone may include a gas inflow isolator coupled via a gas dual flow path to respective exhaust ports of respective process zones. The isolation zone may include a respective isolation curtain having a split gas flow. | 12-22-2011 |
20120000425 | Apparatus for Processing Substrate - A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe. | 01-05-2012 |
20120031338 | SUSCEPTOR AND APPARATUS FOR CVD WITH THE SUSCEPTOR - A susceptor and an apparatus for chemical vapor deposition (CVD) are provided. The susceptor includes a main body configured to include a mounting unit having an uneven plane, and a substrate supporting unit configured to be seated on the mounting unit. A bottom surface of the substrate supporting unit has a shape corresponding to a shape of the mounting unit, and the mounting unit includes a gas discharge hole to discharge gas to the substrate supporting unit. Accordingly, accurate positioning of the substrate supporting unit may not be required when the substrate supporting unit is being returned. Also, the vapor deposition may be stably performed. | 02-09-2012 |
20120031339 | DEPOSITION HEAD AND FILM FORMING APPARATUS - There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing. | 02-09-2012 |
20120037077 | LARGE AREA DEPOSITION IN HIGH VACUUM WITH HIGH THICKNESS UNIFORMITY - The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes. | 02-16-2012 |
20120055402 | PROCESSING APPARATUS - A processing apparatus includes a gas supply passage for supplying a corrosive gas having a halogen, a part of the passage being made of a metal; a stabilization reaction unit which has an energy generator for supplying light energy or heat energy to the corrosive gas that has passed through the metallic part of the gas supply passage and/or has an obstacle configured to apply a collision energy to the corrosive gas that has passed through the metallic part of the gas supply passage, the collision energy being generated from a collision between the obstacle and said corrosive gas. A reaction for stabilizing a compound containing the metal and the halogen contained in the corrosive gas takes place by means of at least one of the light energy, heat energy, and collision energy; and a trapping unit which traps the compound stabilized in the stabilization reaction unit. | 03-08-2012 |
20120079985 | METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other. | 04-05-2012 |
20120090546 | SOURCE SUPPLYING UNIT, METHOD FOR SUPPLYING SOURCE, AND THIN FILM DEPOSITING APPARATUS - Provided are a source supplying unit and a method for supplying a source. The source supplying unit includes a pot configured to store a source material, an injector communicating with the pot to inject the source material evaporated from the pot, a high frequency coil part surrounding an outside of the pot, and a resistance-type heating part disposed at an outside of the injector. Since a high frequency induction heating method and a resistance-type heating method are combined to evaporate a source material to be supplied, a large amount of source material can be used, and the thickness and quality of a thin film can be easily controlled. | 04-19-2012 |
20120103260 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR - Disclosed is an apparatus for manufacturing semiconductors, to be used for various processes in semiconductor manufacture processing, such as the forming of layers on wafers. A tube has a processing space therein and a discharge hole at a side thereof. A boat can be loaded and unloaded through a lower opening of the tube. Susceptors are vertically separated from one another and supported within the boat, have a central hole defined in the respective centers of rotation thereof, and have a plurality of wafers stacked around a central perimeter on the respective top surfaces thereof. A supply tube is installed at the top of the boat and passes through each central hole of the susceptors, and defines discharge holes for discharging processing gas supplied from the outside onto each top surface of the susceptors. | 05-03-2012 |
20120111271 | CHEMICAL VAPOR DEPOSITION REACTOR - A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition. | 05-10-2012 |
20120111272 | MOCVD SINGLE CHAMBER SPLIT PROCESS FOR LED MANUFACTURING - In one embodiment an integrated processing system for manufacturing compound nitride semiconductor devices comprising a metal organic chemical vapor deposition (MOCVD) chamber operable to form a gallium nitride (GaN) layer over one or more substrates with a thermal chemical-vapor-deposition process and to form a multi-quantum well (MQW) layer over the GaN layer, and a halogen containing gas source coupled with the MOCVD chamber operable for flowing a halogen containing gas into the MOCVD chamber to remove at least a portion of unwanted deposition build-up deposited when forming the GaN layer over the one or more substrate from one or more interior surfaces of the MOCVD chamber prior to forming the MQW layer over the GaN layer, wherein the halogen containing gas is selected from the group comprising fluorine, chlorine, bromine, iodine, HI gas, HCl gas, HBr gas, HF gas, NF3, and combinations thereof is provided. | 05-10-2012 |
20120111273 | COOLED PVD SHIELD - The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time. | 05-10-2012 |
20120118233 | SYSTEMS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION - Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns. | 05-17-2012 |
20120125260 | System for Abating the Simultaneous Flow of Silane and Arsine - A system for abating a simultaneous flow of silane and arsine contained in an exhaust gas of DRAM processing chamber. The system includes a CVD abatement apparatus and a resin-type adsorber. The CVD abatement apparatus comprises an enclosure that defines a chamber for receiving the exhaust gas. The enclosure contains a plurality of removable substrates arranged as a series of baffles inside the enclosure. As the exhaust gas flows through the CVD abatement apparatus, the silicon within the silane is deposited as a film upon the substrates by chemical vapor deposition. The arsine continues to flow through the CVD apparatus to the adsorber where it is adsorbed by the resin contained therein. After the film has reached a particular thickness, the substrates can be removed from the enclosure, cleaned of the film and returned to the enclosure for further use. | 05-24-2012 |
20120167824 | CVD APPARATUS - A chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an internal chamber having an internal space, an external chamber configured to cover the internal chamber so as to maintain a sealing state thereof; a wafer holder disposed within the internal chamber for a plurality of wafers stacked therein; a gas supplier including an inner pipe having an inner path, an external pipe having an external path, a refrigeration pipe having a cooling path. The inner path of the inner pipe supplies a first process gas into the reaction chamber. The external path of the external pipe surrounds the inner pipe to supply a second process gas therethrough. The refrigeration pipe supplies a refrigerant to prevent temperature rise in the inner pipe. | 07-05-2012 |
20120192793 | FILM FORMING APPARATUS - Provided is a film forming apparatus which forms a film on a substrate held within a film forming container by supplying raw material gas onto the substrate. The apparatus includes: a supply mechanism which supplies the raw material gas into the container; an exhaust mechanism which exhausts gas from the container; a trap unit which is disposed in the course of an exhaust passage through which gas flows from the container to the exhaust mechanism, and traps the raw material gas by extracting a product containing the raw material gas; a purge gas supplying unit which is connected to join the exhaust passage between the container and the trap unit and supplies purge gas into the exhaust passage; and a pressure gauge which is disposed in a purge gas supplying passage through which the purge gas flows from the purge gas supplying unit into the exhaust passage. | 08-02-2012 |
20120199072 | METHOD AND APPARATUS FOR MANUFACTURING SILICON THIN FILM LAYER AND MANUFACTURING APPARATUS OF SOLAR CELL - A method and apparatus for manufacturing a silicon thin film layer and a manufacturing apparatus of a solar cell are disclosed. The manufacturing apparatus of solar cell comprises an outer chamber; an inner chamber disposed within the outer chamber; a container disposed at the inner chamber and which receives a fluid; and a heat exchanger disposed at the outside of the outer chamber and which exchanges heat of the fluid. | 08-09-2012 |
20120234242 | THERMAL REACTORS WITH IMPROVED GAS FLOW CHARACTERISTICS - The present invention provides methods and systems of reacting a precursor material disposed on a continuous flexible workpiece to form a solar cell absorber. The reactor is configured to have a uniform transition in cross-sectional area from a gas inlet into a reaction space and then a uniform transition in cross-sectional area from the reaction area to a gas outlet. The uniform transition reduces gas turbulence. The continuous flexible workpiece may also be positioned on a floor that is configured to reduce turbulence adjacent the lateral edges of the continuous flexible workpiece. | 09-20-2012 |
20120247391 | VERTICAL BATCH-TYPE FILM FORMING APPARATUS - A vertical batch-type film forming apparatus includes: a processing chamber collectively performing a film forming process to a plurality of processing targets; a heating device heating the plurality of processing targets; an exhauster evacuating an inside of the processing chamber; an accommodating container accommodating the processing chamber; a gas supply mechanism supplying a gas used in a process into the accommodating container; and a plurality of gas introducing holes provided in a sidewall of the processing chamber. The gas used in a process is supplied into the processing chamber via the gas introducing holes in a parallel flow to processing surfaces of the plurality of processing targets, and a film forming process is collectively performed to the plurality of processing targets without setting the furnace temperature gradient in the processing chamber. | 10-04-2012 |
20120255493 | GAS EVAPORATOR FOR COATING PLANTS - The present invention relates to gas evaporator devices ( | 10-11-2012 |
20120255494 | LOW TEMPERATURE CNT GROWTH USING GAS-PREHEAT METHOD - A method for synthesizing carbon nanotubes (CNT) comprises the steps of providing a growth chamber, the growth chamber being heated to a first temperature sufficiently high to facilitate a growth of carbon nanotubes; and passing a substrate through the growth chamber; and introducing a feed gas into the growth chamber pre-heated to a second temperature sufficient to dissociate at least some of the feed gas into at least free carbon radicals to thereby initiate formation of carbon nanotubes onto the substrate. | 10-11-2012 |
20120279452 | SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate processing apparatus in which a plurality of rod-like ceramic heaters are arranged in the form of islands and affixed to the top plate of a process chamber so as to face a wafer, and the lower end portion of each ceramic heater is provided with a metal catalyst layer in such a manner that the metal catalyst layer faces a gas discharge hole of a gas diffusion plate. Consequently, the metal catalyst layer is indirectly heated by the ceramic heater (a resistance heating wire), thereby activating a processing gas. | 11-08-2012 |
20120291707 | FLOATING WAFER TRACK WITH LATERAL STABILIZATION MECHANISM - An apparatus ( | 11-22-2012 |
20120291708 | VACUUM DEPOSITION APPARATUS - Disclosed is a vacuum deposition apparatus, which comprises: a chamber mounted with a source for jetting an application material in the gaseous state for deposition onto a substrate; heaters formed to the inner wall of the chamber and internal parts; a pump for aspirating air out of the chamber; and a plurality of cold traps interposed between the chamber and the pump for cooling the air aspirated by the pump to remove the application material from the air. According to the vacuum deposition apparatus, it is possible to prevent direct damage to the internal parts or the inner wall of the chamber by application materials accumulated thereon. Additionally, the plurality of cold traps prevent pollution and stoppage in continuous production which allows substitution to be carried out without stoppage. Therefore, productivity may be improved compared to other equipment with similar specifications. | 11-22-2012 |
20120318198 | SHIELD MEMBER AND APPARATUS FOR GROWING SINGLE CRYSTAL EQUIPPED WITH THE SAME - Provided is a shield member and an apparatus for growing a single crystal equipped with the shield member, which has significant effect of unifying the surface temperature in the radical direction of the seed crystal and growing crystal, and enables to produce single crystal with high quality and having a large size. Such a shield member includes: a vessel for growing a crystal; a raw material storage part positioned at a lower portion of the vessel for growing a crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at outer periphery of the vessel for growing a crystal, thereby sublimating the raw material from the raw material storage part to grow single crystal of the raw material onto the substrate, in which a plurality of permeation holes through which the raw material gas passes is formed, and the shield member is configured such that the heat capacity thereof increases as displacing from the center to the outer periphery. | 12-20-2012 |
20120325149 | GAS DISTRIBUTION SYSTEM - In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap. | 12-27-2012 |
20130000558 | DEPOSITION DEVICE - The disclosed deposition device for forming a thin film using a starter gas comprising an organic metal compound is provided with: a processing container | 01-03-2013 |
20130008382 | THIN-FILM FORMING DEVICE - This thin-film forming device includes: a deposition vessel in which a reduced-pressure deposition space, to which a raw material gas and a reactant gas are alternately supplied on different timings, is formed in order to form a thin film on the substrate; and a gas supply unit configured to supply the raw material gas and the reactant gas to the deposition vessel. The gas supply unit is provided with at least one partition that bends a gas passage from an inlet port of each of the raw material gas and the reactant gas toward the deposition space. | 01-10-2013 |
20130019802 | NOZZLE ARRANGEMENT AND CVD-REACTOR - A nozzle arrangement has a nozzle body having an inlet, an outlet and a flow space arranged therebetween, and at least one control unit. The control unit has a control part and a setting part. The control part is movable within the flow space and defines a flow cross section within the flow space, which is sufficiently small to cause a loss of pressure at the control part upon a flow of gas through the nozzle body, the loss of pressure biasing the control part towards the outlet. The setting part is movable with the control part and has at least one section, which upon movement thereof varies the flow cross section of the outlet. At least one biasing element is provided, which biases the control part in a direction away from the outlet. Furthermore, a CVD-reactor incorporating such a nozzle arrangement in a bottom wall thereof is described. | 01-24-2013 |
20130025539 | DEVICE FOR DOPING, DEPOSITION OR OXIDATION OF SEMICONDUCTOR MATERIAL AT LOW PRESSURE - A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly. | 01-31-2013 |
20130042812 | COMPOSITE SHIELDING - A composite shield assembly is for use in deposition apparatus defining a work piece location. The assembly includes a first shield element for position circumjacent the work piece location and a second shield element for extending around and carrying the first element. The thermal conductivity of the first element is greater than that of the second element, and the elements are arranged for intimate thermal contact. | 02-21-2013 |
20130074772 | THIN-FILM SOLAR CELL MANUFACTURING SYSTEM - A manufacturing system for thin-film solar cell is disclosed in the present invention. The manufacturing system includes a chamber, a boat disposed inside the chamber, a solid substrate with a first precursor which has a first I B group and III A group, and a flexible substrate with a second precursor which has a second I B group and III A group, a gas controller for pouring reactant gas, and a heater for increasing the temperature of the chamber, so that the reactant gas reacts to the first precursor and the second precursor to form a chalcopyrite structure. | 03-28-2013 |
20130081571 | ORGANIC VAPOR JET PRINTING SYSTEM - An organic vapor jet printing system includes a pump for increasing the pressure of an organic flux. | 04-04-2013 |
20130087099 | In-Situ Hydroxylation Apparatus - Described are apparatuses and methods for the hydroxylation of a substrate surface using ammonia and water vapor. | 04-11-2013 |
20130112141 | TREATMENT DEVICE - A processing system according to the present invention includes: a diffusion processing section | 05-09-2013 |
20130133579 | GAS PREHEATING SYSTEM FOR CHEMICAL VAPOR DEPOSITION - An embodiment of this invention provides a gas preheating system for heating one or more gases used in a chemical vapor deposition. The preheating system comprises a heating module and a delivery module. The delivery module is used for passing the one or more gases, and the heating module is configured to heat the one or more gases indirectly via the delivery module. | 05-30-2013 |
20130139754 | SINGLE DISC VAPOR LUBRICATION - Apparatus and method for vapor deposition of a uniform thickness thin film of lubricant on at least one surface of a disk-shaped substrate. The invention has particular utility in depositing thin films of polymeric lubricants onto disc-shaped substrates in the manufacture of magnetic and MO recording media. | 06-06-2013 |
20130145988 | Substrate Processing Bubbler Assembly - Embodiments provided herein describe bubbler assemblies for substrate processing systems. The substrate processing bubbler assemblies include an inner shell, an outer shell, and a thermoelectric device. The inner shell is configured to hold a liquid. The outer shell at least partially surrounds the inner shell. The inner shell and the outer shell are sized and shaped such that a gap is formed between the inner shell and the outer shell. The thermoelectric device interconnects the inner shell and the outer shell. The thermoelectric device has a first side adjacent to the inner shell and a second side adjacent to the outer shell and is configured to transfer heat between the first side and the second side thereof. | 06-13-2013 |
20130145989 | SUBSTRATE PROCESSING TOOL SHOWERHEAD - Embodiments provided herein describe substrate processing tools and showerheads. A substrate processing tool includes a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. A showerhead is coupled to the housing and positioned within the processing chamber above the substrate support. The showerhead includes a dielectric material and has a first surface with a plurality of fluid outlets, a second surface with a plurality of fluid ports, and first and second passageways extending therethrough. The first passageway is in fluid communication with the plurality of fluid outlets and a first of the plurality of fluid ports. The second passageway is in fluid communication with a second and a third of the fluid ports. | 06-13-2013 |
20130174782 | Low Temperature Deposition Apparatus - A low temperature deposition device according to the present invention includes: a thermal deposition source unit spraying a deposition beam; a differential pumping unit connected to the thermal deposition source unit and passing the deposition beam; and a cooling gas inlet connected to the differential pumping unit and inserting a cooling gas inside the differential pumping unit to cool the deposition beam. According to the present invention, the inorganic deposition beam of low temperature is deposited on the substrate to form the inorganic metal layer of low temperature so that the damage to the organic layer maybe minimized when forming the inorganic metal layer of low temperature on the organic layer. | 07-11-2013 |
20130228125 | VERSATILE SYSTEM FOR SELF-ALIGNING DEPOSITION EQUIPMENT - The present invention provides a system ( | 09-05-2013 |
20130239893 | STABILIZATION METHOD OF FILM FORMING APPARATUS AND FILM FORMING APPARATUS - A method for stabilizing a film forming apparatus, which can selectively perform a boron-containing nitride film forming process or a non-boron-containing nitride film forming process on at least one target object to be processed in a vacuum-evacuable processing chamber, the method includes performing a heat stabilization process to heat the interior of the processing chamber under an oxygen-containing gas atmosphere, between the boron-containing nitride film forming process and the non-boron-containing nitride film forming process when the non-boron-containing nitride film forming process is performed after the boron-containing nitride film forming process. | 09-19-2013 |
20130247825 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film. | 09-26-2013 |
20130269612 | Gas Treatment Apparatus with Surrounding Spray Curtains - The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion, an upper gas spray portion, a lower gas spray portion and a cover on the exterior circular gas spray portion and the upper gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, wherein the second plenum is located under the first heat exchange fluid conduits and above the second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel. | 10-17-2013 |
20130269613 | METHODS AND APPARATUS FOR GENERATING AND DELIVERING A PROCESS GAS FOR PROCESSING A SUBSTRATE - Methods and apparatus for generating and delivering process gases for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a container comprising a lid, a bottom, and a sidewall, wherein the lid, the bottom, and the sidewall define an open area; a solid precursor collection tray disposed within the open area; a gas delivery tube disposed within the open area and extending toward the solid precursor collection tray to provide a gas proximate the solid precursor collection tray; and a purge flow conduit coupled to the open area. | 10-17-2013 |
20130276703 | Gas Treatment Apparatus with Surrounding Spray Curtains - The invention provides a gas treatment apparatus comprising an exterior circular gas spray portion including an exterior circular gas channel, and at least two regions and a cover. Each region has an upper gas spray portion and a lower gas spray portion. The upper gas spray portion has a plurality of first gas channels and a plurality of first heat exchange fluid conduits, each the first gas channel is arranged interlaced with each the first heat exchange fluid conduit. The lower gas spray portion comprises a plurality of second gas channels and a plurality of second heat exchange fluid conduits, each the second gas channel is arranged interlaced with each the second heat exchange fluid conduit, and each the second gas channel surrounds each the first gas channel. The combinations of the first gas channels and the second gas channels in adjacent regions respectively are arranged at an angle. | 10-24-2013 |
20130284094 | Modular System for Continuous Deposition of a Thin Film Layer on a Substrate - A system and associated process for vapor deposition of a thin film layer on a photovoltaic (PV) module substrate is includes establishing a vacuum chamber and introducing the substrates individually into the vacuum chamber. A conveyor system is operably disposed within the vacuum chamber and is configured for conveying the substrates in a serial arrangement through a vapor deposition apparatus within the vacuum chamber at a controlled constant linear speed. A post-heat section is disposed within the vacuum chamber immediately downstream of the vapor deposition apparatus in the conveyance direction of the substrates. The post-heat section is configured to maintain the substrates conveyed from the vapor deposition apparatus in a desired heated temperature profile until the entire substrate has exited the vapor deposition apparatus. | 10-31-2013 |
20130298830 | GROWTH REACTOR SYSTEMS AND METHODS FOR LOW-TEMPERATURE SYNTHESIS OF NANOWIRES - A method for synthesis of silicon nanowires provides a growth reactor having a decomposition zone and a deposition zone. A precursor gas introduced into the decomposition zone is disassociated to form an activated species that reacts with catalyst materials located in the deposition zone to deposit nano-structured materials on a low melting point temperature substrate in the deposition zone. A decomposition temperature in the decomposition zone is greater than a melting point temperature of the low melting point temperature substrate. The silicon nanowire are grown directly on the low melting point temperature substrate in the deposition zone to prevent the higher temperatures in the decomposition zone from damaging the molecular structure and/or integrity of the lower melting point temperature substrate located in the deposition zone. | 11-14-2013 |
20130305990 | Apparatus and Method for Deposition for Organic Films - The invention provides apparatus and methods for organic continuum vapor deposition of organic materials on large area substrates. | 11-21-2013 |
20140041589 | HEATING ELEMENT FOR A PLANAR HEATER OF A MOCVD REACTOR - A heating element includes a heating body which is directly covered at least partly with a porous sintered coating, wherein the heating body and the porous sintered coating each includes at least 90% by weight of tungsten. | 02-13-2014 |
20140102371 | COMPACT ORGANIC VAPOR JET PRINTING PRINT HEAD - A first device is provided. The first device includes a print head, and a first gas source hermetically sealed to the print head. The print head further includes a first layer further comprising a plurality of apertures, each aperture having a smallest dimension of 0.5 to 500 microns. A second layer is bonded to the first layer. The second layer includes a first via in fluid communication with the first gas source and at least one of the apertures. The second layer is made of an insulating material. | 04-17-2014 |
20140123900 | GAS SHOWER DEVICE HAVING GAS CURTAIN AND APPARATUS FOR DEPOSITING FILM USING THE SAME - A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency. | 05-08-2014 |
20140130742 | APPARATUS AND METHOD FOR DEPOSITION - Disclosed are a deposition apparatus and a deposition method. The deposition apparatus comprises a generator to produce an intermediate compound by using a source material, a storage part to collect and store the intermediate compound, and a reaction part in which the intermediate compound is introduced and reaction of the intermediate compound occurs. The deposition method comprises producing an intermediate compound by using a source material, collecting and storing the intermediate compound, and introducing the intermediate compound into a reaction furnace and allowing the intermediate compound to react to a substrate or a wafer. | 05-15-2014 |
20140144383 | VACUUM DEPOSITION APPARATUS - Disclosed is a vacuum deposition apparatus for depositing a source on a substrate arranged in a vacuum chamber, the vacuum deposition apparatus including: a substrate carrier which carries the substrate; a nozzle which is arranged to be opposite to the substrate carrier and jets a source to the substrate arranged on the substrate carrier; and a temperature controller which controls a surface temperature of the substrate carrier such that the source is prevented from being deposited on the substrate carrier. Thus, a vacuum deposition apparatus can minimize deterioration in productivity caused when sources are deposited as particles on the substrate carrier for carrying a substrate. | 05-29-2014 |
20140165913 | DEPOSITION SOURCE AND DEPOSITION APPARATUS INCLUDING THE SAME - A deposition source includes a furnace extending in a first direction and configured to discharge deposits on a substrate, and a cooling housing on the furnace comprising a plurality of cooling plates, wherein each of the cooling plates comprises a plurality of cooling flow paths around the furnace. | 06-19-2014 |
20140165914 | ORGANIC MATERIAL DEPOSITION APPARATUS - An organic material deposition apparatus includes a chamber, a substrate support unit, a rail, a driving apparatus, a plate heating apparatus, and a plate cooling apparatus. The substrate support unit is disposed in an upper portion of the chamber and supports the substrate. The rail extends from a deposition region, which is disposed under the substrate support unit, to a standby region. The driving apparatus moves a crucible which evaporates an organic material. The plate heating apparatus heats an upper plate disposed in an upper portion of the standby region. The plate cooling apparatus cools a lower plate disposed in a lower portion of the standby region. | 06-19-2014 |
20140209027 | SHOWERHEAD HAVING A DETACHABLE GAS DISTRIBUTION PLATE - Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side; a gas distribution plate disposed proximate the second side of the base; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed between the base and gas distribution plate. | 07-31-2014 |
20140216347 | CHEMICAL VAPOR DEPOSITION REACTOR - A CVD reactor, such as a MOCVD reactor conducting metalorganic chemical vapor deposition of epitaxial layers, is provided. The CVD or MOCVD reactor generally comprises a flow flange assembly, adjustable proportional flow injector assembly, a chamber assembly, and a multi-segment center rotation shaft. The reactor provides a novel geometry to specific components that function to reduce the gas usage while also improving the performance of the deposition. | 08-07-2014 |
20140230733 | GRAPHENE DEFECT ALTERATION - Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area. | 08-21-2014 |
20140238302 | APPARATUS FOR DEPOSITING ATOMIC LAYER - An atomic layer deposition apparatus including a substrate loading unit provided in a process chamber, the substrate loading unit including at least one substrate loading plate on which a substrate is to be loaded, an injector assembly coupled to the process chamber and configured to supply a plurality of reactants to deposit a multilayer film onto the substrate while sweeping over the substrate loaded on the substrate loading plate, a plurality of first heat sources configured to heat in a non-contact manner, and, a plurality of second heat sources configured to heat in a contact manner, the first and second heat sources at different positions in the process chamber may be provided. | 08-28-2014 |
20140261183 | COATING APPARATUS - A coating apparatus including an evaporation part, a thermal decomposition part, a deposition chamber, a vacuum pump, and a discharge pipe. The deposition chamber includes an upper portion, a lower portion facing the upper portion, and a sidewall portion connecting the upper portion and the lower portion to each other and including an inlet, first outlet, a second outlet, a third outlet and a fourth outlet. The discharge pipe includes a first auxiliary pipe connected to the first outlet and the second outlet, a second auxiliary pipe connected to the third outlet and the fourth outlet, an intermediate pipe connected to the first auxiliary pipe and the second auxiliary pipe, and a main pipe connected to the intermediate pipe. The vacuum pump is configured to discharge a portion of the monomer of the deposition material, which is not deposited, from the deposition chamber through the discharge pipe. | 09-18-2014 |
20140299060 | THIN FILM DEPOSITION APPARATUS - A thin film deposition apparatus includes a vacuum chamber, a substrate supporter disposed in the vacuum chamber to support a target substrate on which a thin film is deposited, and a deposition source that evaporates a deposition material and supplies the evaporated deposition material to the target substrate. The deposition source includes a crucible that includes a deposition material-containing portion to accommodate the deposition material and a first flange at an upper end of the deposition material-containing portion, a spray nozzle that includes a spray portion through which the evaporated deposition material is sprayed and a second flange at a lower end of the spray portion to make contact with the first flange, and a cooling member attached to an outer surface of the first flange and the second flange. | 10-09-2014 |
20140326184 | COOLING PEDESTAL WITH COATING OF DIAMOND-LIKE CARBON - A cooling pedestal for supporting a substrate, comprises a support structure having cooling conduits to flow a fluid therethrough to cool the substrate, and a contact surface comprising a coating of a diamond-like carbon. The coating comprises (i) a coefficient of friction of less than about 0.3, (ii) an average surface roughness of less than about 0.4 micrometers, and (iii) a microhardness of at least about 8 GPa. | 11-06-2014 |
20140352618 | SYSTEM FOR FORMING GRAPHENE ON SUBSTRATE - A system for forming a graphene on a substrate includes a reactor having a gas inlet and a gas outlet; a substrate placed in a lower side of the reactor; a carbon-containing heating element located in reactor; which is exposed to the same gases with the substrate; the heating element being used as a heating source to heat the substrate and also as a carbon source for forming a graphene film on a substrate; at least one process gas inputted from the gas inlet; and after reaction, the process gas outputs from the gas outlet. The heating element is powered on by a power source and the heating element is heated; by controlling the feeding of process gas, small amount of carbon can be transported to the surface of the substrate for graphene growth; and thus, a graphene sheet is formed on the substrate. | 12-04-2014 |
20140352619 | CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION - A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these. | 12-04-2014 |
20150027375 | DEPOSITION SOURCE FOR DEPOSITION DEVICE - A deposition source for a deposition device includes a crucible. A heater is disposed outside of the crucible and the heater has a plate shape. The deposition source includes a heater guide. The heater is disposed within the heater guide, and the heater guide supports the heater. An external supporter is connected to the heater guide. | 01-29-2015 |
20150047565 | Trap Mechanism, Exhaust System, and Film Formation Device - A trap mechanism is provided in the middle of an exhaust passage through which an exhaust gas, which is exhausted from a film formation device body that forms a thin film on the surface of a workpiece (W), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism includes: a housing having a gas inlet and a gas outlet; a partitioning member that partitions the inside of the housing into retention spaces; communication paths that communicate the retention spaces with one another; and cooling jackets that cool the communication paths to cool the exhaust gas. With this structure, the exhaust gas is adiabatically expanded while being cooled, and the gas to be collected is efficiently cooled and liquefied. | 02-19-2015 |
20150075430 | EPI PRE-HEAT RING - Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side. | 03-19-2015 |
20150083046 | CARBON FIBER RING SUSCEPTOR - Embodiments described herein generally relate to an apparatus for heating substrates. In one embodiment, a susceptor comprises a ring shaped body having a central opening and a lip extending from an edge of the body that circumscribes the central opening. The susceptor comprises carbon fiber or graphene. In another embodiment, a method for forming a susceptor comprises molding carbon fiber with an organic binder into a shape of a ring susceptor and firing the organic binder. In yet another embodiment, a method for forming a susceptor comprises layering graphene sheets into a shape of a ring susceptor. | 03-26-2015 |
20150376787 | SPATIAL CONTROL OF VAPOR CONDENSATION USING CONVECTION - Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel. | 12-31-2015 |
20160002788 | CHEMICAL VAPOUR DEPOSITION DEVICE - A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to said reaction chamber via a circumferential opening in the inner wall of said chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. Said inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example fins. | 01-07-2016 |
20160024651 | VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING - A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof. | 01-28-2016 |
20160251754 | HEATER ABNORMALITY DETECTING APPARATUS, PROCESSING LIQUID SUPPLYING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM | 09-01-2016 |
20160376701 | SUBSTRATE PROCESSING APPARATUS AND CEILING PART - A substrate processing apparatus includes a reaction tube processing a substrate, a heating part disposed on an outside of the reaction tube that heats the interior of the reaction tube, an insulating part disposed on an outside of the heating part, a plurality of flow channels installed in the insulating part and allows an air or a cooling medium to flow, and a ceiling part configured to cover an upper surface of the insulating part. The ceiling part includes a first member having a supply hole formed to communicate with the flow channels and to supply the air or cooling medium into the flow channels, and a second member having a space formed between the second member and the first member and allowing the air or the cooling medium to flow therein and having a partition part to partition the space into at least two spaces. | 12-29-2016 |
20170232457 | SUBSTRATE PROCESSING APPARATUS AND PRECURSOR GAS NOZZLE | 08-17-2017 |
20180023195 | METHOD TO IMPROVE PRECURSOR UTILIZATION IN PULSED ATOMIC LAYER PROCESSES | 01-25-2018 |