Class / Patent application number | Description | Number of patent applications / Date published |
118708000 | CONDITION RESPONSIVE CONTROL | 74 |
20080202415 | Methods and systems for addition of cellulose ether to gypsum slurry - An example system for making a gypsum board product comprises a container for containing a gypsum slurry, a moving receiver in communication with the container, wherein the container substantially continuously deposits the gypsum slurry on the moving receiver. A first and at least a second cellulose ether supply containing a first cellulose ether communicate with the container. The first and second supplies contain cellulose ethers having different physical or chemical properties. A controller is configured to change the amount of the first and second cellulose ethers delivered to the container in response to a change in at least one slurry physical property. | 08-28-2008 |
20080289574 | THERMOCOUPLE - A thermocouple having a support tube configured to receive a pair of wires of dissimilar metals. The pair of wires of the thermocouple connected at a junction adjacent to one end of the support tube. The thermocouple further including a cap attached to the opposing end of the support tube, wherein the cap receives the free ends of the pair of wires. The cap allowing the pair of wires to translate freely therethrough to accommodate the difference in thermal expansion and contraction of the pair of wires relative to the thermal expansion and contraction of the support tube. | 11-27-2008 |
20080314315 | MONITORING METHOD AND MONITORING APPARATUS FOR SEMICONDUCTOR PRODUCTION EQUIPMENT - In a monitoring method of the present invention, a flow voltage value corresponding to zero flow is acquired before the start of a substrate treatment by a substrate treatment apparatus. Next, a flow voltage value corresponding to a control state while the flow is controlled according to a control signal during the substrate treatment is acquired. Then, an actual flow rate is calculated according to a difference between the flow voltage value during the flow control and the flow voltage value at the time of zero flow. Further, a difference between the actual flow rate of a currently-implemented substrate treatment and the actual flow rate of the last substrate treatment is calculated, and the fluctuation of the flow control characteristic and the flow control accuracy are monitored according to the difference. | 12-25-2008 |
20090064931 | Method of manufacturing semiconductor device and substrate processing apparatus - A method of manufacturing a semiconductor device of the present invention includes a first step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium, on a substrate having a metal thin film formed on the surface, at a first temperature allowing no oxidization of the metal thin film to occur, and allowing the metal oxide film to be set in an amorphous state; and a second step of forming a metal oxide film containing at least one or more kinds of elements selected from the group consisting of hafnium, yttrium, lanthanum, aluminium, zirconium, strontium, titanium, barium, tantalum, niobium on the metal oxide film formed in the first step, up to a target film thickness, at a second temperature exceeding the first temperature. | 03-12-2009 |
20090078196 | TREATMENT DEVICE, TREATMENT DEVICE CONSUMABLE PARTS MANAGEMENT METHOD, TREATMENT SYSTEM, AND TREATMENT SYSTEM CONSUMABLE PARTS MANAGEMENT METHOD - A processing apparatus includes counters each used to measure the length of RF discharge time over which power is applied to a consumable component in correspondence to a specific type of processing executed in a processing chamber, a storage to store wear coefficient information indicating wear coefficients each corresponding to one of the plurality of types of processing, and a control unit that obtains information indicating RF discharge time lengths measured by the counters in correspondence to the individual types of processing, obtains the wear coefficients corresponding to the individual types of processing indicated in the wear coefficient information stored in the storage, calculates a wear index value for the consumable component based upon the RF discharge time lengths and the wear coefficients corresponding to the individual types of processing, and executes consumable component management processing based upon the calculated wear index value. | 03-26-2009 |
20090078197 | Substrate processing system, control method for substrate processing apparatus and program - The present invention provides a substrate processing system, a control method for a substrate processing apparatus, and a program for the system and/or method, each of which is intended to achieve effective control for a film-forming amount on processed substrates. The substrate processing system includes a substrate processing unit adapted for forming a film on each of the plurality of substrates; a pattern obtaining unit adapted for obtaining information about an arrangement pattern concerning arrangement of unprocessed substrates and processed substrates among the plurality of substrates; and a memory unit adapted for storing therein an arrangement/film-forming-amount model indicative of influence exerted on the film-forming amount on the substrates by the arrangement of the unprocessed substrates and processed substrates among the plurality of substrates. A calculation unit calculates an estimated film-forming amount on the substrates, in the case of the arrangement pattern, based on the arrangement/film-forming-amount model. Then, a determination unit determines whether or not the estimated film-forming amount calculated by the calculation unit is within a predetermined range. If the estimated film-forming amount calculated by the calculation unit is determined to be within the predetermined range, a control unit will control and drive the substrate processing unit to process the substrates. | 03-26-2009 |
20090095218 | Temperature controlled showerhead - A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger. | 04-16-2009 |
20090095219 | Temperature controlled showerhead - A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger. | 04-16-2009 |
20090126628 | RADIATION APPLIANCE, POWDER APPLYING STATION, ARRANGEMENT FOR COATING TEMPERATURE-SENSITIVE MATERIALS, AND ASSOCIATED METHOD - The invention relates to a radiation appliance ( | 05-21-2009 |
20090126629 | Film-forming system and film-forming method - A film-forming system comprising a vacuum chamber and an electroconductive partition plate dividing said vacuum chamber into a plasma generating space provided with a high-frequency electrode and a film-forming treatment space provided with a substrate-retaining mechanism for holding a substrate mounted thereon. A gas for generating desired active species by discharge plasma is introduced into the plasma generating space. Said desired active species are supplied to the film-forming treatment space through a plurality of penetration holes formed in the electroconductive partition plate for communicating the plasma generating space with the film-forming treatment space. Said electroconductive partition plate has a first internal space separated from the plasma generating space and communicating with the film-forming treatment space via a plurality of material gas diffusion holes. A material gas is introduced from the outside into said first internal space and supplied into the film-forming treatment space through a plurality of said material gas diffusion holes. Said electroconductive partition plate further has a second internal space separated from said first internal space and communicating with said film-forming treatment space via a plurality of gas diffusion holes. A gas other than said material gas is introduced from the outside into said second internal space. A film is deposited on the substrate by a reaction between said active species and said material gas supplied to said film-forming treatment space. | 05-21-2009 |
20090133623 | METAL FILM PRODUCTION APPARATUS AND METAL FILM PRODUCTION METHOD - A metal film production apparatus supplies a source gas containing a halogen such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing a film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member. | 05-28-2009 |
20090178614 | FILM-FORMING APPARATUS - A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead. | 07-16-2009 |
20090183678 | LIQUID APPLYING APPARATUS, METHOD OF CONTROLLING THE SAME, AND INK JET PRINTING APPARATUS - An object of the present invention is to provide a liquid applying apparatus that enables the viscosity of a liquid to be applied and the condition of supply of the liquid to be detected using conventional mechanisms and without the need for a viscometer or the like, thus allowing prevention of improper application of the liquid to a medium and mitigation of wear of an applying roller or the like, the apparatus having an inexpensive configuration. Thus, according to the present invention, a driving load on an applying roller driving motor is detected when an applying roller is driven. If the driving load is equal to or more than a preset threshold, an operation of re-supplying the liquid is performed by a pump, or an operation of the roller driving motor is stopped. | 07-23-2009 |
20090188430 | Film Forming Apparatus, Matching Device, and Impedance Control Method - The present invention realizes an impedance control for avoiding the extinction of a plasma caused due to a sudden change in a load impedance, which may occur immediately after the plasma is generated. A film-forming apparatus of the present invention includes a power supply; a matching circuit; an electrode configured to receive electric power from the power supply through the matching circuit, and to generate a plasma inside a film forming chamber for accommodating a film forming target based on the electric power; and a control section configured to control an impedance of the matching circuit. The control section keeps the impedance of the matching circuit constant during a first period starting at a first time t | 07-30-2009 |
20090194023 | Plasma processing apparatus - A plasma processing apparatus is provided which can suppress variation in the electrode impedance varying due to a product or the like attached in a processing chamber, and which prevents variation in electric power consumed for plasma. According to the present invention, a plasma processing apparatus comprises a radiofrequency power supply | 08-06-2009 |
20090266297 | LIQUID MATERIAL APPLICATION DEVICE - A liquid material application device having high space utilization efficiency and having excellent maintainability. In a liquid material application device for applying a liquid material to a desired position on a surface of a workpiece in a box by relatively moving a nozzle for discharging the liquid material and a table on which the workpiece is placed to face the nozzle, the liquid material application device comprises a carrying in/out opening formed in a side surface of the box and allowing the workpiece to be carried in and carried out therethrough, a beam extending toward the carrying in/out opening, an application head movable in the extending direction of the beam, beam moving means for moving the beam above and in parallel to the table, and a control unit for controlling operations of the aforesaid components. | 10-29-2009 |
20100012029 | APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING - In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked. | 01-21-2010 |
20100012030 | Process for Deposition of Semiconductor Films - Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes. | 01-21-2010 |
20100018462 | METHOD FOR OXIDIZING A LAYER, AND ASSOCIATED HOLDING DEVICES FOR A SUBSTRATE - A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing. | 01-28-2010 |
20100071620 | Central supply system of alignment material and apparatus for forming alignment layer having the same - An apparatus for forming an alignment layer comprising: at least one alignment layer forming line having a plurality of alignment layer forming units; a plurality of alignment material coating devices disposed at each alignment layer forming unit and configured to coat an alignment material on a substrate of the corresponding alignment layer forming units; at lest one alignment material supplying unit having a plurality of second alignment material containers for supplying the alignment material to each alignment material coating device; a central supplying unit connected to the at least alignment material supplying unit and having at least one first alignment material container for supplying the alignment material to the at least one alignment material supplying unit; a supplying pipe configured to connect the at least one alignment material supplying unit to the central supplying unit; and a controller configured to measure the remnant amount of alignment material of the at least one alignment material supplying unit so as to supply the alignment material in the first alignment material container to the plurality of second alignment material containers via the supplying pipe when the measured remnant amount of the alignment material is smaller than a minimum amount thereof, and to measure the remnant amount of the alignment material in the central supplying unit so as to replace the first alignment material container with a new first alignment material container fully filled with the alignment material when the remnant amount of the alignment material in the central supplying unit is smaller than the minimum amount thereof. | 03-25-2010 |
20100147216 | Dynamic Film Thickness Control System/Method and its Utilization - A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed. | 06-17-2010 |
20100147217 | INTEGRATION OF A PROCESSING BENCH IN AN INLINE COATING SYSTEM - An insert apparatus for a substrate coating system, the insert apparatus including an insert element for being operated within a coating system, the insert element including a processing bench, the processing bench adapted for receiving a coating tool for applying a coating to a substrate, a carrier for carrying the insert element, a first positioner collaborating with the carrier for inserting the insert element into a processing chamber of the coating system and/or retracting the insert element from the processing chamber, and a second positioner for fine positioning of the insert element within the processing chamber. | 06-17-2010 |
20100154708 | HIGH-TEMPERATURE EVAPORATOR CELL FOR EVAPORATING HIGH-MELTING MATERIALS - An evaporator cell for evaporating a high-melting material to be evaporated, comprises a crucible for receiving the material to be evaporated, and a heating device with a heating resistor for the resistance heating of the crucible, the heating resistor being provided as an electron emitter for the electron beam heating of the crucible. | 06-24-2010 |
20100170437 | Dynamic Film Thickness Control System/Method and its Utilization - A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed. | 07-08-2010 |
20100236477 | HEAT TREATMENT APPARATUS, HEAT TREATMENT METHOD, AND RECORDING MEDIUM STORING COMPUTER PROGRAM CARRYING OUT THE SAME - An experiment is conducted in advance, for finding a temperature of a cooling plate attained as a result of balancing between a temperature of a substrate after heat treatment and a temperature of the cooling plate at the time of cooling of the substrate. Then, before heat treatment of a first substrate, the cooling plate is moved to a position above a hot plate, the cooling plate is heated to that temperature, and thereafter heat treatment of the substrate is started. | 09-23-2010 |
20100242841 | ELECTRON BEAM VAPOR DEPOSITION APPARATUS AND METHOD OF COATING - An electron beam vapor deposition apparatus includes a coating chamber including a coating zone for depositing a coating on a work piece. A coating device includes at least one crucible for presenting at least one source coating material. The coating device includes a first deposition mode of depositing the at least one source coating material and a second deposition mode of depositing the at least one source coating material. At least one electron beam source evaporates the at least one source coating material for deposit onto the work piece. A controller is configured to control a speed of movement of the work piece in the coating zone during the coating operation in response to the first deposition mode and the second deposition mode. | 09-30-2010 |
20100263590 | Vapor Deposition Electron Beam Current Control - Systems and methods are described that monitor electron beam current and voltage. The systems and methods react to fault conditions such as arcing experienced during evaporation and deposition processes to shutdown and protect associated power supply equipment. The systems and methods may provide online beam current control to provide stable operation of e-beam guns during heating and melting modes of operation. | 10-21-2010 |
20100263591 | MARKING APPARATUS HAVING ENVIRONMENTAL SENSORS AND OPERATIONS SENSORS FOR UNDERGROUND FACILITY MARKING OPERATIONS, AND ASSOCIATED METHODS AND SYSTEMS - Marking information relating to use of a marking device to perform a marking operation may be acquired from one or more input devices, logged/stored in local memory of a marking device, formatted in various manners, processed and/or analyzed at the marking device itself, and/or transmitted to another device (e.g., a remote computer/server) for storage, processing and/or analysis. In one example, a marking device may include one or more environmental sensors and/or operational sensors, and the marking information may include environmental information and operational information derived from such sensors. Environmental and/or operational information may be used to control operation of the marking device, assess out-of-tolerance conditions in connection with use of the marking device, and/or provide alerts or other feedback. Additional enhancements are disclosed relating to improving the determination of a location (e.g., GPS coordinates) of a dispensing tip of the marking device during use, a group/solo mode, and tactile functionality of a user interface. | 10-21-2010 |
20100275841 | DEPOSITION SOURCE - A deposition source capable of uniformly producing a deposition film. The deposition source includes a furnace, a first heating unit surrounding the furnace to heat the furnace and a second heating unit spaced-apart from the first heating unit by an interval and surrounding the furnace to heat the furnace, wherein the second heating unit comprises a plurality of separate sub-heating units that surround the furnace. | 11-04-2010 |
20100300356 | Method and System for Coating a Medical Device Using Optical Drop Volume Verification - A method and apparatus for controlling coating material deposition on to a medical device. Images of material drops in flight are captured and an average single drop volume value is calculated by conversion of the captured drop images to a volume measurement. The average single drop volume value is used to calculate a total number of drops necessary to apply a desired amount of coating. Alternately, material is applied and the amount of material deposited is accumulated and adjustments are made to deposit only a desired amount of coating material. A drop volume is determined for either every drop or a sampling of drops as the drops are being applied. Adjustments to the coating process include changing drop size and changing a number of drops to be deposited. | 12-02-2010 |
20110023780 | APPARATUS FOR VHF IMPEDANCE MATCH TUNING - Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric. | 02-03-2011 |
20110061594 | ADHESIVE APPLICATION APPARATUS - An adhesive application apparatus for applying a liquid adhesive to an object includes a regular application stage against which the object is placed for a regular application of the liquid adhesive to the object, a trial application stage to which a trial application of the liquid adhesive is carried out, an application unit relatively movable with respect to the regular application stage and trial application stage to carry out the regular application and trial application of the liquid adhesive, and a suction unit carrying out a suction operation of the liquid adhesive used in the trial application. The adhesive application apparatus smoothly carries out the trial application of the liquid adhesive without bothering the operation of an adhesive application line. | 03-17-2011 |
20110107967 | METHOD AND APPARATUS FOR COMBINING PARTICULATE MATERIAL - A method of selectively combining particulate material, for example plastics material by sintering, comprises providing a layer of particulate material, providing radiation, for example using a radiation source over the layer, and varying the absorption of the provided radiation across a selected surface portion of the layer to combine a portion of the material of the layer. The method may comprise varying radiation absorption by varying the intensity of the radiation incident on the surface portion of the layer, or alternatively may comprise varying the radiation absorptive properties of the particulate material over the selected surface portion of the layer, for example by printing a radiation absorbent material onto the surface portion. | 05-12-2011 |
20110239939 | STENT COATING APPARATUS USING FOCUSED ACOUSTIC ENERGY - An apparatus for coating a stent includes an optical feedback system used to align a transducer with a stent strut. Once alignment is achieved, the transducer causes a coating to be ejected onto the stent strut and the transducer is moved along the stent strut to coat the stent strut. | 10-06-2011 |
20110259268 | METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION - Embodiments of the invention generally provide apparatuses for endpoint detection of dopants. In one embodiment, the apparatus has a plasma chamber containing a body having sidewalls, a lid, and a bottom encompassing an interior volume and a substrate support assembly disposed within the body and having a substrate supporting surface configured to support a substrate. The apparatus also has a processing region disposed between the substrate supporting surface and a gas distribution assembly—which contains a perforated plate disposed above the substrate supporting surface. The apparatus also has a plasma source coupled with the body and configured to form an inductively coupled plasma within the interior region. Additionally, the apparatus has an optical sensor disposed either above or below the substrate supporting surface and coupled with a controller, wherein the controller is configured to derive a current dopant concentration relative to an amount of radiation received by the optical sensor. | 10-27-2011 |
20110297086 | Adhesive Applicator - Bookbinding apparatus adhesive applicator accurately, briefly controls adhesive temperature to a set value by selecting, in accordance with adhesive initial temperature, one of a plurality of temperature-controller heating modes defining different supply powers and supply durations for supplying power to an adhesive-container heater to control its heating temperature. A sensor detects the temperature of the adhesive in the container at applicator start-up, or on restarting a post-standby applicator. In accordance with the detected temperature, one of the heating modes is selected to heat the adhesive. The applicator warm-up time is thus set in response to the state of the adhesive: If solidified, the adhesive is heated and melted in a maximum supply-power, supply-duration mode; if low-temperature liquefied, it is heated and melted in a second-magnitude supply-power, supply-duration mode; and if the adhesive temperature is high, it is heated and melted in a minimal supply-power, supply-duration mode. | 12-08-2011 |
20110303146 | PLASMA DOPING APPARATUS - There is provided a regulating gas suction device, which forms a regulating gas flow for use in preventing air outside a vacuum container trying to invade into the vacuum container through a sealing member that tightly closes a gap between an upper end surface of the vacuum container and a peripheral edge of a top pate being opposed to each other from flowing toward a substrate at a coupling portion between the top plate and the vacuum container. | 12-15-2011 |
20110308453 | CLOSED LOOP MOCVD DEPOSITION CONTROL - A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems. | 12-22-2011 |
20110308454 | Device and Method for Sheathing a Ply of Threads - A device for continuously sheathing a ply of threads, said ply being formed by an array of approximately mutually parallel threads. The device includes a thread guide, a coating chamber into which a first feed channel and a second feed channel run, which are independent of each other, connected to a first feed device and to a second feed device respectively and capable of delivering a first material and a second material under pressure and with a defined flow rate, and the outlets of which channels are placed above and below the plane of the ply of threads, and an output die. Pressure-measuring device, connected to a controller for controlling the pressure of each of the feed devices, are placed in the coating chamber facing and in line with each other, on either side of the plane of the ply and in the immediate vicinity of the outlet for the feed channels. | 12-22-2011 |
20110308455 | METHOD OF FORMING NANO-PARTICLE ARRAY BY CONVECTIVE ASSEMBLY, AND CONVECTIVE ASSEMBLY APPARATUS FOR THE SAME - A method of forming a nano-particle array by convective assembly and a convective assembly apparatus for the same are provided. The method of forming nano-particle array comprises: coating a plurality of nano-particles by forming a coating layer; performing a first convective assembly by moving a first substrate facing, in parallel to and spaced apart from a second substrate at a desired distance such that a colloidal solution including the coated nano-particles is between the first and second substrate; and performing a second convective assembly for evaporating a solvent by locally heating a surface of the colloidal solution drawn when the first substrate is moved in parallel relative to the second substrate. The present invention provides the method of forming the nano-particle array where nano-particles having a particle size from a few to several tens of nanometers are uniformly arrayed on a large area substrate at a low cost, and the convective assembly apparatus for the same. | 12-22-2011 |
20120000420 | SUBSTRATE COATING DEVICE - The substrate coating device ( | 01-05-2012 |
20120031330 | SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS - According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield. | 02-09-2012 |
20120067280 | ACTIVATOR MEANS FOR PRE-APPLIED ADHESIVES - An activator means for use in activating or re-activating adhesive and sealant compositions that have been pre-applied to a bonding surface prior to mating said bonding surface said means having a plurality of features for directly acting upon the pre-applied composition. | 03-22-2012 |
20120067281 | SURFACE WAVE PLASMA CVD APPARATUS AND FILM FORMING METHOD - A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation. | 03-22-2012 |
20120160164 | VACUUM PROCESSING APPARATUS AND PROCESSING METHOD USING THE SAME - A vacuum processing apparatus includes: a process chamber capable of reducing a pressure; a transport unit, provided in the process chamber, for transporting a plurality of substrates; a gas supply unit for supplying a gas to process the substrates in the process chamber; a substrate processing unit for processing the substrates placed on the transport unit; a detection unit for detecting a substrate interval between adjacent substrates out of the plurality of substrates; and a control unit for controlling, based on the substrate interval detected by the detection unit, a supply amount of the gas to be supplied by the gas supply unit. | 06-28-2012 |
20120160165 | APPARATUS FOR MANUFACTURING A THIN FILM LAMINATE - An apparatus for manufacturing a thin-film laminate prevents loosening of a strip-shaped flexible substrate at the time of conveying or misalignment of the strip-shaped flexible substrate with respect to a winding roller at the time of winding. In the apparatus, a strip-shaped flexible substrate in a lateral direction is conveyed by positioning longitudinally the width direction of the strip-shaped flexible substrate wound in a roll shape. The apparatus includes a deposition device having a deposition chamber for forming a thin film on the strip-shaped flexible substrate, a winding roll for winding a thin-film laminate, and an adjustment roller to prevent a loosening or misalignment of the strip-shaped flexible substrate between a pair of grip rollers and the winding roll, and the pair of grip rollers arranged in front of the adjustment roller to convey the thin-film laminate while maintaining a given height. | 06-28-2012 |
20120180719 | FILM FORMING APPARATUS - A film forming apparatus for forming a polyimide film on a substrate installed within a film forming container. The apparatus includes: a first vaporizer configured to vaporize a first raw material in a solid state, and supply the vaporized first raw material gas to the substrate; a second vaporizer configured to vaporize a second raw material in a liquid state, and supply the vaporized second raw material gas to the substrate; a first pressure measurement unit configured to measure the internal pressure of the first vaporizer; a second pressure measurement unit configured to measure the internal pressure of the second vaporizer; and a controller configured to calculate a supply amount of the first and second raw material gases by the first and second pressure measurement units, respectively, and control the first and second vaporizers to supply the first and second raw material gases in a uniform amount. | 07-19-2012 |
20120180720 | CVD APPARATUS - A CVD apparatus ( | 07-19-2012 |
20120180721 | DUAL-PURPOSE FACILITY OF CONTINUOUS HOT-DIP COATING AND CONTINUOUS ANNEALING - A dual-purpose facility of continuous hot-dip coating and continuous annealing is configured so as to be switched between a continuous hot-dip coated material production line and a continuous annealed material production line, and includes a gas discharge path that discharges atmosphere gas in an annealing furnace from a gas discharge port provided in an outlet side of the annealing furnace out of the annealing furnace and a path opening and closing unit for opening and closing the gas discharge path. The path opening and closing unit opens the gas discharge path when the dual-purpose facility is used as the continuous hot-dip coated material production line and closes the gas discharge path when the dual-purpose facility is used as the continuous annealed material production line. | 07-19-2012 |
20120210934 | PRINTING DEVICE - A printing device includes a plurality of treatment devices, a transporting part, a detection part, a storage unit, a determination part and a controller. Each of the treatment devices is configured and arranged to perform a treatment on a base material. The transporting part is configured and arranged to transport the base material between the treatment devices. The detection part is configured and arranged to perform a detecting action in placement parts in the treatment devices, the detection part being provided to the transporting part. The storage unit is configured and arranged to correlate and store a position and detection data detected by the detection part. The determination part is configured and arranged to determine presence of the base material in the treatment devices based on the data stored in the storage unit. The controller is configured to determine a treatment action based on determination result of the determination part. | 08-23-2012 |
20120234237 | COATING MACHINE FOR COATING FIBER YARNS - A coating machine for coating fiber yarns includes: a yarn supply device; a coating device including a tank, a drum rotatably disposed in the tank, and at least one annular groove formed circumferentially in an outer surface of the drum; a thickness adjuster disposed downstream of the coating device and including an adjuster support and at least one adjusting die mounted movably to the adjuster support, the adjusting die having a through hole, the through hole having an upstream inlet end and a downstream outlet end and being tapered from the upstream inlet end to the downstream outlet end; a shape-setting device disposed downstream of the thickness adjuster and having a heating unit controllable to operate at a predetermined temperature; a cooling device disposed downstream of the shape-setting device; and a yarn pick-up device disposed downstream of the cooling device. | 09-20-2012 |
20120266816 | POLYCRYSTAL SILICON MANUFACTURING APPARATUS - A polycrystal silicon manufacturing apparatus is disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a heater configured to supply heat to an internal space of the reaction pipe to generate silicon deposition reaction of the silicon particles; a temperature measurement unit configured to measure a temperature inside the reaction pipe; and a power supply unit configured to increase the temperature inside the reaction pipe, when a temperature value measured by the temperature measurement unit is less than a reference temperature value. | 10-25-2012 |
20120266817 | SUBSTRATE PROCESSING APPARATUS CAPABLE OF CLEANING INSIDE THEREOF AND CLEANING CONTROL APPARATUS FOR CONTROLLING CLEANING PROCESS OF SUBSTRATE PROCESSING APPARATUS - A cleaning control apparatus capable of performing a cleaning process efficiently regardless of qualities and thicknesses of films formed in a process tube and a gas supply nozzle. The cleaning control apparatus employs cleaning request signal output units configured to output cleaning request signals requesting cleaning processes of a silicon-containing gas supply system and nitriding source gas supply system when accumulated amounts of the molecules of the silicon-containing gas and the nitriding source gas exceeds preset values. | 10-25-2012 |
20120304927 | IN-SITU FLUX MEASURMENT DEVICES, METHODS, AND SYSTEMS - In-situ flux measurement methods, devices, and systems are provided. According to some embodiments, an in-situ molecular flux device generally comprises a electrically conductive container configured to hold a precursor material, a heat source proximate the electrically conductive container to heat the precursor material to release ions such that an ion current is produced; and a current-measuring device in electrical communication with the electrically conductive container to measure the ion current associated with the heated precursor material. Other embodiments are also claimed and described. | 12-06-2012 |
20130000553 | INSTALLATION FOR THE LAYERED CONSTRUCTION OF A SHAPED BODY, COMPRISING A COATING DEVICE CLEANER | 01-03-2013 |
20130019800 | WAXING DEVICE - A waxing device is used for applying a waxing treatment to a polishing wheel, and includes a supporting assembly, an adjusting assembly, a driving mechanism, a mounting assembly, a motor, a wax block and a resisting mechanism. The supporting assembly includes a sliding rail, and the adjusting assembly is slidably positioned on the sliding rail; the driving mechanism is mounted on the adjusting assembly; the mounting assembly includes a mounting member positioned on the driving mechanism; the motor is mounted on mounting member; the wax block is positioned on the motor and rotated by the motor; the resisting mechanism is positioned on the supporting assembly and resists the adjusting assembly for adjusting a pressure applied to the polishing wheel during the waxing process. | 01-24-2013 |
20130133574 | MATERIAL DEPOSITION SYSTEM FOR DEPOSITING MATERIALS ON A SUBSTRATE - A material deposition system for depositing materials on an electronic substrate with a material deposition system is disclosed. The deposition system includes a frame, a gantry system coupled to the frame, a deposition head coupled to the gantry system and configured to deposit dots of low viscous and semi-viscous material on the electronic substrate, and a controller configured to control the operation of the material deposition system, including the operation of the gantry system and the deposition head. The system is capable of depositing a line or a pattern of material on the electronic substrate by moving the deposition head along an axis of motion that is substantially non-parallel to a direction of the line or pattern. Other deposition systems and methods are further disclosed. | 05-30-2013 |
20130291795 | THIN FILM DEPOSITION SYSTEM WITH COOLING MODULE - A film deposition apparatus is disclosed. The apparatus comprises: a reaction chamber, a susceptor, a heating module, a driving module, and a cooling module. The susceptor is used for bearing at least one wafer; the heating module is used for heating the wafer; the driving module is used for driving the susceptor to rotate. The cooling module is disposed between the heating module and the driving module. The cooling module is configured to make the temperature distribution between the heating module and the driving module discontinuous. | 11-07-2013 |
20130327272 | DIAGNOSTIC AND CONTROL SYSTEMS AND METHODS FOR SUBSTRATE PROCESSING SYSTEMS USING DC SELF-BIAS VOLTAGE - A substrate processing system includes a processing chamber including a showerhead, a plasma power source and a pedestal spaced from the showerhead to support a substrate. A filter is connected between the showerhead and the pedestal. A variable bleed current circuit is connected between the filter and the pedestal to vary a bleed current. A controller is configured to adjust a value of the bleed current and configured to perform curve fitting based on the bleed current and DC self-bias voltage to estimate at least one of electrode area ratio, Bohm current, and radio frequency (RF) voltage at a powered electrode. | 12-12-2013 |
20140041584 | ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION - Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. | 02-13-2014 |
20140090595 | DUAL-PURPOSE FACILITY OF CONTINUOUS HOT-DIP COATING AND CONTINUOUS ANNEALING - A dual-purpose facility of continuous hot-dip coating and continuous annealing is configured so as to be switched between a continuous hot-dip coated material production line and a continuous annealed material production line, and includes a gas discharge path that discharges atmosphere gas in an annealing furnace from a gas discharge port provided in an outlet side of the annealing furnace out of the annealing furnace and a path opening and closing unit for opening and closing the gas discharge path. The path opening and closing unit opens the gas discharge path when the dual-purpose facility is used as the continuous hot-dip coated material production line and closes the gas discharge path when the dual-purpose facility is used as the continuous annealed material production line. | 04-03-2014 |
20140196662 | Nanoclad Pipe Weld Repair, Systems and Methods - An in situ apparatus, system, and method for cladding or repairing cladding in installed pipelines are presented. The apparatus can include a coating collar, a material reservoir, a cladding head, an adjustable cladding chamber, and a chamber controller. The coating collar can include an external surface, a first circumferential wall, and a second circumferential wall and forms the adjustable cladding chamber along with interior wall of the pipe. The coating collar can have an aperture to include and allow deployment of the cladding head through it. The cladding head can be operatively coupled with the cladding material reservoir to allow efficient deployment of the cladding material on the pipe surface. The chamber controller can be coupled with the adjustable cladding chamber to control dimensions of the chamber thus restricting and controlling the environment and enabling efficient functioning of the cladding head and limiting grain growth in applied nanoclad materials. | 07-17-2014 |
20140290576 | METHOD AND APPARATUS FOR TUNING ELECTRODE IMPEDANCE FOR HIGH FREQUENCY RADIO FREQUENCY AND TERMINATING LOW FREQUENCY RADIO FREQUENCY TO GROUND - Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing. | 10-02-2014 |
20140311408 | Multi-Region Processing System and Heads - The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described. | 10-23-2014 |
20140318452 | MULTI-ZONE MODULAR COATER - This disclosure describes a module web coating system and components thereof including a more uniform atmospheric control pumping mechanism and gas curtain separation system. A modular web coating system may include an unwind module, any number of process modules, and a rewind module. The process modules are interchangeable and independently operable. In addition, this disclosure describes a more uniform pumping system in which process gas is removed from multiple locations or slits spaced around a process chamber and, in an example, around a process device such as a deposition source. The gas curtain system utilizes a zone between process chambers into which separation gas is injected. Gas from the chambers is continuously removed thereby operating the chambers under negative pressure and preventing process gas from one chamber bleeding into an adjacent chamber. | 10-30-2014 |
20140352614 | GLUE SPRAYING SYSTEM WITH DETECTION DEVICE - A glue spraying system includes a transmission device, a spurting device, a pressing device, a detection device, and a control module. The transmission device includes a front and a rear transmission wheels, a thin film is transmission from the front transmission wheel to the rear transmission wheel by the transmission device. The spurting device is positioned above the thin film, and is for spurting glue on the thin film. The pressing device is positioned at a side of the spurting device, and is for pressing the glue on a spraying area of the thin film. The detection device is configured for detecting whether or not the glue is sprayed on the blank area. The control module is connected to the transmission device and the detection device. When the first sensor detects the glue, the control module controls the transmission device to slow down a transmission speed. | 12-04-2014 |
20150007769 | DUAL COATING SYSTEM - First and second coaters, first and second edge determiners, and first and second moving mechanisms are provided. The first and second coaters apply a coating solution for forming a heat-resistant protection layer onto both surfaces of a substrate on each of which an active material layer is previously formed. The first and second edge determiners determine the locations of lateral edges of the active material layers formed on both surfaces of the substrate to be coated by the respective first and second coaters. The first and second moving mechanisms move the location of the substrate along the width thereof based on the locations of the lateral edges determined by the first and second edge determiners, respectively. The locations of regions of both surfaces of the substrate to be coated are separately adjusted. | 01-08-2015 |
20150075425 | Coating System Using Spray Nozzle - Provided herein is a coating system using a spray nozzle, the coating system comprising: a support where a substrate is disposed; a spray nozzle configured to inject towards the substrate liquid that has gone through a primary atomization by collision with gas; a voltage applier configured to apply voltage to the spray nozzle so that the liquid injected from the spray nozzle includes electric charge, and to generate an electric field between the support and the spray nozzle by the voltage applied to the spray nozzle and perform a secondary atomization of the liquid injected from the spray nozzle; and a transferrer configured to transfer at least one of the support and the spray nozzle. | 03-19-2015 |
20150101534 | Vapor Deposition Equipment for Fabricating CIGS Film - The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system. | 04-16-2015 |
20160121397 | The Arrangement For Coating A Powder - An arrangement includes a processing chamber, a coating platform located in the processing chamber, and a coating device with a coating element located in the processing chamber for coating a metal or ceramic powder. The arrangement also has an exchanging device for exchanging at least one portion of the coating element with another portion of the same coating element or for exchanging the entire coating element with another coating element within the processing chamber when the processing chamber is closed. The exchanging device can include a multiple head, e.g., a pivoting head or revolving head, an exchanging station, and/or a moving device that allows a coating element portion that is to be exchanged to be moved or pushed away. A part of the coating element can also be rolled on a supply roller, and the coating element portion can be exchanged by unrolling the coating element from the supply roller. | 05-05-2016 |
118710000 | Valve actuator | 4 |
20080282977 | Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus - A process gas line ( | 11-20-2008 |
20120097102 | APPARATUS FOR DEPOSITING A THIN FILM OF MATERIAL ON A SUBSTRATE AND REGENERATION PROCESS FOR SUCH AN APPARATUS - Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S | 04-26-2012 |
20130276700 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON - A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state. | 10-24-2013 |
20130312663 | Vapor Delivery Apparatus - A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature. | 11-28-2013 |