Class / Patent application number | Description | Number of patent applications / Date published |
117077000 | Gas or vapor state precursor or overpressure | 14 |
20090126623 | Apparatus for producing group III element nitride semiconductor and method for producing the semiconductor - The present invention provides an apparatus for producing a Group III nitride semiconductor, which enables production of a uniform Si-doped GaN crystal. In one embodiment of the invention, an apparatus for producing a Group III nitride semiconductor includes a supply tube for supplying nitrogen and silane, a Ga-supplying apparatus for supplying Ga melt to a crucible, and an Na-supplying apparatus for supplying Na melt to the crucible. Nitrogen and a dopant is mixed together, and the gas mixture is supplied through one single supply tube without provision of a conventionally employed supply tube for only supplying a dopant. Thus, dead space in a reaction vessel is reduced, and vaporization of Na is suppressed, whereby a high-quality, Si-doped GaN crystal can be produced. | 05-21-2009 |
20090139446 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON INGOT - Provided is a process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melting method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown. | 06-04-2009 |
20090145350 | METHOD OF INJECTING DOPANT GAS - According to an dopant-injection method for injecting volatilized dopant gas into semiconductor melt in a crucible ( | 06-11-2009 |
20100192839 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL - A group III element nitride single crystal is grown on a template immersed in a raw material liquid retained in a crucible and containing a group III material and one of an alkali metal and an alkali earth metal. The raw material liquid remaining after the growth of the single crystal is cooled and solidified, and by feeding a hydroxyl group-containing solution into the crucible, the solidified raw material is removed from around the template, and thus the group III element nitride single crystal is taken out from inside the solidified raw material. The template is disposed at a position away from the bottom of the crucible. | 08-05-2010 |
20100229787 | Crystal Manufacturing Apparatus - A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels. | 09-16-2010 |
20110259261 | REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL - It is provided a method of growing a single crystal by flux process from a melt containing sodium, in that a flux is contained in a reaction vessel made of yttrium-aluminum garnet. Compared with the case that an alumina or yttria vessel is used, it can be successfully obtained a single crystal whose incorporation amounts of oxygen and silicon can be considerably reduced, residual carrier density can be lowered, and electron mobility and specific resistance can be improved. | 10-27-2011 |
20120137961 | METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME - Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall. | 06-07-2012 |
20120260848 | Single crystal growth method for vertical high temperature and high pressure group III-V compound - The invention discloses a single crystal growth method for a vertical high temperature and high pressure group III-V compound. A vertical high temperature and high pressure stove is capable of providing a group III element fusion zone with a temperature equal to or greater than that of a composition melting point and providing a group V element provision zone below the group III element fusion zone. The stove provides steam to the group III element fusion zone and the group V element provision zone at a temperature greater than evaporation temperature. The compound synthesis of a group III element and a group V element is completed in the group III element fusion zone, and an in-situ growth of single crystal is completed in the group III element fusion zone, thereby preventing the growth of the rich group III element and increasing the single crystal process efficiency. | 10-18-2012 |
20130104799 | Shroud and Method for Adding Fluid to a Melt | 05-02-2013 |
20140144373 | METHODS FOR SYNTHESIZING SEMICONDUCTOR QUALITY CHALCOPYRITE CRYSTALS FOR NONLINEAR OPTICAL AND RADIATION DETECTION APPLICATIONS AND THE LIKE - A method for synthesizing I-III-VI | 05-29-2014 |
20140261157 | METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING THE SAME - A method for producing a group 13 nitride crystal, comprises a crystal growth step of reacting nitrogen and a mixed melt containing at least a group 13 metal and at least one of an alkali metal and an alkaline earth metal, in the mixed melt, to grow a nitride crystal on a seed crystal, wherein at least one of the mixed melt and the seed crystal is rotated in the crystal growth step, a relative speed between the mixed melt and the seed crystal in the crystal growth step is repeatedly fluctuated in accordance with one or a plurality of types of predetermined patterns, and a maximum value of the relative speed indicated by the pattern is 0.01 m/s or more. | 09-18-2014 |
20160002818 | CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITRIDE CRYSTAL - A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture. | 01-07-2016 |
20160160381 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, AND CRUCIBLE THEREFOR - An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 μm. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality. | 06-09-2016 |
20160168747 | APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL | 06-16-2016 |