Class / Patent application number | Description | Number of patent applications / Date published |
117023000 | Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method) | 28 |
20080245292 | Apparatus and methods of growing void-free crystalline ceramic products - A method and apparatus for eliminating voids and improving crystal quality in shaped ceramic product, e.g. sapphire fiber or silicon sheet, from a melt by using a sloped die tip. The sloped die tip or array thereof comprises an outer sidewall which is sloped outwardly at an angle of 5° to 40° from the vertical. | 10-09-2008 |
20100058977 | Single crystal seed - A single crystal seed for use in casting a single crystal article, consisting essentially of, in weight %, about 5.0% to about 40.0% Mo, up to 0.1% C and balance essentially Ni. | 03-11-2010 |
20100147209 | Polycrystalline Germanium-Alloyed Silicon And A Method For The Production Thereof - A rod having a length of 0.5 m to 4 m and having a diameter of 25 mm to 220 mm, comprising a high-purity alloy composed of 0.1 to 50 mol % germanium and 99.9 to 50 mol % silicon, the alloy having been deposited on a thin silicon rod or on a thin germanium-alloyed silicon rod, the deposited alloy having a polycrystalline structure. | 06-17-2010 |
20120060748 | Method and apparatus for continuous crystal growth - A Czochralski (“CZ”) single-crystal growth process system continuously grows crystal boules in a chamber furnace during a single thermal cycle. Finished boules are transferred from the furnace chamber, without need to cool the furnace, to an adjoining cooling chamber for controlled cooling. Controlled cooling is preferably accomplished by transporting boules along a path having an incrementally decreasing temperature. In order to maximize crystal boule yield in a single furnace thermal cycle, the crucible assembly may be recharged with crystal growth aggregate and/or slag may be discharged during the crystal boule growth process without opening the furnace. | 03-15-2012 |
20140060420 | Ti: SAPPHIRE CRYSTAL FIBER, MANUFACTURING METHOD THEREOF, AND WIDE BAND LIGHT SOURCE USING THE SAME - The present invention relates to a crystal fiber, and more particularly to a Ti: sapphire crystal fiber, a manufacturing method thereof, and a wide band light source with the same. The Ti: sapphire single crystal is grown by means of laser-heated pedestal growth (LHPG) method into a crystal fiber of a predetermined diameter. The as-grown crystal fiber is annealed for enhancing its fluorescence and reducing the infra-red residual absorption. The annealed crystal fiber is inserted into a glass capillary and is grown into a single-clad crystal fiber. The wide band light source comprises: a pumping source for providing a pumping light; a single-clad Ti: sapphire crystal fiber for absorbing the pumping light and emitting the wide band light. | 03-06-2014 |
20150090178 | Flowable Chips and Methods for the Preparation and Use of Same, and Apparatus for Use in the Methods - A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems. | 04-02-2015 |
20160090663 | METHOD OF INCLUDING DEADSORPTION AND CRYSTAL GROWTH - A method can include deadsorbing an impurity from an initial material to form a deadsorbed material, melting the deadsorbed material to form a melt within the crucible, and growing a crystal from the melt. In an embodiment, growing is performed at a growth rate that is at least 1.1 times a growth rate of a different crystal formed from a melt of the initial material using a same crystal growth technique, having a same cross-sectional shape, size, and crystal orientation, and a same haze level. In another embodiment, the method can include crushing an initial material to reduce closed porosity before or during deadsorbing impurities. | 03-31-2016 |
20160090667 | FEED SYSTEM INCLUDING A DEADSORPTION UNIT AND A TUBE AND A METHOD OF USING THE SAME - A feed system for a crystal growth apparatus can include a deadsorption unit and a tube. In an embodiment, the deadsorption unit can deadsorb an impurity from a material used to form a crystal. The tube can be fluidly coupled to the deadsorption unit and the crystal growth apparatus to transfer the material from a lower point to a higher point. In another embodiment, any finite number of deadsorption units may be coupled to any finite number of crystal growth apparatuses. In a further embodiment, a crystal growth system can include the feed system and a crystal growth apparatus, wherein the feed system can continuously provide crystal-forming material to the crystal growth apparatus as a crystal is being formed. | 03-31-2016 |
117024000 | Embedded in product (e.g., string-stabilized web) | 5 |
20090050051 | Method for Growing Thin Semiconductor Ribbons - A method of pulling at least one ribbon of a semiconductor material, in which method two parallel filaments that are spaced apart from each other pass vertically upwards through the surface of a melt of said semiconductor material in a continuous manner, said ribbon being formed from a meniscus located between said filaments and substantially at said surface. According to the invention, a support strip is interposed between said filaments and is contained in the plane defined by said filaments, said support strip passing vertically upwards through said surface of said melt of molten semiconductor material in a continuous manner at the same rate as said filaments, said ribbon of semiconductor material being formed on one of the two faces of said support strip and being supported by said face. The invention can be used for making polycrystalline silicon ribbons for fabricating photo-cells. | 02-26-2009 |
20110155045 | Controlling the Temperature Profile in a Sheet Wafer - A sheet wafer growth system includes a crucible for containing molten material and an afterheater positioned above the crucible. The afterheater has an inner surface disposed toward the crucible. The system further includes one or more shields adjacent to the inner surface of the afterheater. The afterheater and the shield(s) are configured to allow a sheet wafer to pass adjacent to the shield(s). Each shield has two or more substantially different thermally conductive regions such that the two or more regions are configured to control the temperature profile of the growing sheet wafer. | 06-30-2011 |
20110247546 | Ribbon Crystal String for Increasing Wafer Yield - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 10-13-2011 |
20130036966 | RIBBON CRYSTAL END STRING WITH MULTIPLE INDIVIDUAL STRINGS - A ribbon crystal has a body and end string within the body. At least one end string has a generally concave cross-sectional shape and is formed from at least two individual strings. | 02-14-2013 |
20130047914 | RIBBON CRYSTAL STRING FOR INCREASING WAFER YIELD - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 02-28-2013 |
117026000 | Defines a flat product | 15 |
20080302296 | Method and Apparatus for Growing a Ribbon Crystal with Localized Cooling - A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given portion. | 12-11-2008 |
20100282160 | SINGLE CRYSTALS AND METHODS FOR FABRICATING SAME - Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well. | 11-11-2010 |
20100288186 | FORMATION OF SILICON SHEETS BY IMPINGING FLUID - Techniques are generally disclosed for forming crystalline bodies. An example system, device or method for forming crystalline bodies may include a crucible for containing molten crystalline material and a support for accommodating a seed on an end thereof, the support being movable along a translation axis in a pull direction to draw the seed crystal from the molten crystalline, thereby initiating growth of a crystalline body along a growth path. Further examples may include one or more nozzles configured to be coupled to a fluid source, the nozzles being positioned relative to the growth path for shaping the crystal body as the molten crystalline is pulled in the pull direction along the growth path. | 11-18-2010 |
20120145069 | MELT FIXTURE INCLUDING THERMAL SHIELDS HAVING A STEPPED CONFIGURATION AND A METHODS OF USING THE SAME - Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well. | 06-14-2012 |
20140102358 | METHOD, DIE, AND APPARATUS FOR CRYSTAL GROWTH - An apparatus, die, and method can be used form a ribbon from a melt, where capillaries are relatively short and spacers are relatively long as compared to a die opening. Such a configuration can cause the melt to flow is a transverse direction that is substantially parallel to the solid/liquid interface to help move impurities to desired locations. In a particular embodiment, a crystal ribbon can be formed where defects, such as microvoids and impurities, are at higher concentrations near outer edges of the crystal ribbon. The outer edges can be removed to produce crystal substrates that are substantially free of microvoids and have no or a relatively low concentration of impurities. In another particular embodiment, the transverse flow can also help to increase the crystal growth rate. | 04-17-2014 |
20140202376 | METHOD FOR PRODUCING SAPPHIRE SUBSTRATE USED IN LIGHT EMITTING DIODE - In a method, a sapphire raw material is placed into the recess of a mold and melted by heating to infill the recess by capillary action to form a liquid film. A sapphire seed having a specific growing plane is moved to dip the growing plane into the liquid film, thus forming a solid-liquid interface. The sapphire seed is lifted up such that the liquid film is crystallized on the growing surface to form the sapphire substrate. Two surfaces of the sapphire substrate are first coarsely and then finely ground to reduce a thickness of the sapphire substrate. The two surfaces of the sapphire substrate are first coarsely and then finely polished to improve smoothness of the surfaces. | 07-24-2014 |
20140311402 | Sapphire Sheets and Apparatus and Method for Producing Sapphire Sheets with Angled Heat Shields - The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness. | 10-23-2014 |
20140352604 | METHOD FOR GROWING -Ga2O3 SINGLE CRYSTAL - A method for growing a β-Ga | 12-04-2014 |
20150308012 | METHOD FOR GROWING B-Ga2O3 SINGLE CRYSTAL - A method for growing a β-Ga | 10-29-2015 |
20160122899 | METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME - Provided is one embodiment which is a method for growing a β-Ga | 05-05-2016 |
117027000 | Pulling includes a horizontal component | 5 |
20090139445 | Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication - The device comprises a crucible ( | 06-04-2009 |
20110168081 | Apparatus and Method for Continuous Casting of Monocrystalline Silicon Ribbon - An apparatus for forming monocrystalline silicon ribbon. The apparatus includes a crucible wherein a silicon melt is formed. The melt is allowed to flow substantially vertically out of the crucible and to contact a silicon seed crystal before solidification. Pursuant to solidification into a ribbon, further cooling of the ribbon occurs under controlled conditions and the ribbon is ultimately cut. Also, a method for forming monocrystalline silicon ribbon using the aforementioned apparatus. | 07-14-2011 |
20110271899 | REMOVING A SHEET FROM THE SURFACE OF A MELT USING GAS JETS - In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus. | 11-10-2011 |
20130298821 | METHOD AND APPARATUS FOR THE PRODUCTION OF CRYSTALLINE SILICON SUBSTRATES - An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon. | 11-14-2013 |
20150040819 | SYSTEM AND METHOD FOR FORMING A SILICON WAFER - An apparatus for forming a crystalline ribbon from molten silicon having a silicon ribbon support. A heater is provided including a pair of spaced planar electrodes parallel to the surface of the molten silicon for capacitively coupling radio frequency electrical currents into the material causing a ribbon of material to melt along a zone. A conductive electrode in thermal contact with a respective cooler and a dielectric layer between the conductive and semi-conductive electrodes is provided. A controller configured to control the removal of heat from the melted ribbon of material in a direction substantially perpendicular to the surface of the molten silicon to effect crystal growth. | 02-12-2015 |