VISHAY INTERTECHNOLOGY, INC. Patent applications |
Patent application number | Title | Published |
20130335191 | SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME - A chip resistor includes an insulating substrate, top terminal electrodes formed on top surface of the substrate using silver-based cermet, bottom electrodes, resistive element that is situated between the top terminal electrodes and overlaps them partially, an optional internal protective coating that covers resistive element completely or partially, an external protective coating that covers completely the internal protection coating and partially covers top terminal electrodes, a plated layer of nickel that covers face sides of the substrate, top and bottom electrodes, and overlaps partially external protective coating, finishing plated layer that covers nickel layer. The overlap of nickel layer and external protective layer possesses a sealing property because of metallization of the edges of external protective layer prior to the nickel plating process. | 12-19-2013 |
20120126934 | SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME - A chip resistor includes an insulating substrate | 05-24-2012 |
20110260826 | FOUR-TERMINAL RESISTOR WITH FOUR RESISTORS AND ADJUSTABLE TEMPERATURE COEFFICIENT OF RESISTANCE - Thermally stable four-terminal resistor (current sensor) is characterized by having the capacity to adjust both resistance and temperature coefficient of resistance (TCR), during manufacturing process. The four-terminal resistor includes 3 or 4 elementary resistors R | 10-27-2011 |
20110176247 | PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE - A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique. | 07-21-2011 |
20080303720 | CERAMIC DIELECTRIC FORMULATION FOR BROAD BAND UHF ANTENNA - A dielectric ceramic composition has a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz. The dielectric ceramic composition may be formed by sintering by firing in air without a controlled atmosphere. The dielectric ceramic composition may have a major component of 92.49 to 97.5 wt. % containing 60.15 to 68.2 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate; and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide. UHF antennas and monolithic ceramic components may use the dielectric ceramic composition. | 12-11-2008 |
20080211619 | SULFURATION RESISTANT CHIP RESISTOR AND METHOD FOR MAKING SAME - A chip resistor includes an insulating substrate | 09-04-2008 |