VIA Alliance Semiconductor Co., Ltd. Patent applications |
Patent application number | Title | Published |
20150311700 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT - An electrostatic discharge (ESD) protection circuit includes a first n-type transistor, a discharge acceleration circuit and a discharge time circuit. The first n-type transistor has a first terminal coupled to a supply voltage, a second terminal coupled to a reference voltage, and a gate, wherein the first n-type transistor couples the supply voltage to the reference voltage during an ESD event at an I/O pad. The discharge acceleration circuit is coupled to the gate of the first n-type transistor to the I/O pad during the ESD event and coupled to the gate of the first n-type transistor to the reference voltage when there is no ESD event. The discharge time circuit, coupled to the discharge acceleration circuit and the supply voltage, controls a discharge time of the first n-type transistor of coupling the supply voltage to the reference voltage during the ESD event at the I/O pad. | 10-29-2015 |
20150134889 | DATA STORAGE SYSTEM AND MANAGEMENT METHOD THEREOF - Data storage system and management method thereof are provided. The method, adopted by a data storage device coupled to a host device via a bus, includes: determining the data storage device requires to use a first temporary memory of the host device to access data in a second temporary memory of the data storage device; based on the determination, issuing a Device Bus Master (DBM) request message via the bus to the host to request for a right to control data transfer on the bus; in response to the DBM request message, detecting the bus to determine whether to receive a first DBM acknowledgement message from the host device; and if the first DBM acknowledgement message is received, then accessing the first temporary memory of the host device. | 05-14-2015 |