Universiadad de Granada
Armilla ( Granada), ES
Universiadad de Granada Patent applications | ||
Patent application number | Title | Published |
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20120113730 | RAM MEMORY ELEMENT WITH ONE TRANSISTOR - A memory element includes a MOS transistor having a drain, a source and a body region covered by an insulated gate, wherein the thickness of the body region is divided into two distinct regions separated by a portion of an insulating layer extending parallel to the plane of the gate. | 05-10-2012 |