TRIQUINT SEMICONDUCTOR, INC.
|TRIQUINT SEMICONDUCTOR, INC. Patent applications|
|Patent application number||Title||Published|
|20150256172||BIAS CIRCUIT FOR A HIGH POWER RADIO FREQUENCY SWITCHING DEVICE - Embodiments provide a switching circuit including a transistor and a bias circuit. The transistor may transition between an off state and an on state responsive to a control signal received at a control terminal. The bias circuit may be coupled between the control terminal and a gate terminal of the transistor. The bias circuit may include a gate resistor coupled between the gate terminal and the control terminal. The bias circuit may further include one or more diodes coupled in parallel with the gate resistor between the gate terminal and the control terminal to allow leakage current to pass from the gate terminal through the one or more diodes. In some embodiments, the bias circuit may include a switch coupled with the one or more diodes to selectively couple the one or more diodes in parallel with the gate resistor when the transistor is off.||09-10-2015|
Patent applications by TRIQUINT SEMICONDUCTOR, INC.