TOYO TANSO CO., LTD.
|TOYO TANSO CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20150255314||STORING CONTAINER, STORING CONTAINER MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present invention is to provide a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of a heat treatment under Si vapor pressure. The storing container is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.||09-10-2015|
|20150249025||SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - Provided is a heat treatment container having a small size and capable of efficiently performing a heat treatment on a SiC substrate. A heat treatment container is a container for a heat treatment on a SiC substrate||09-03-2015|
Patent applications by TOYO TANSO CO., LTD.