TOSHIBA MATERIALS CO., LTD.
|TOSHIBA MATERIALS CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20150257252||SEMICONDUCTOR CIRCUIT BOARD, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT BOARD - The present invention provides a semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa. Further, assuming that a thickness of the insulating substrate is t1 and a thickness of the conductor portion is t2, the thickness of t1 and t2 satisfy a relation: 0.1≦t2/t1≦50. Due to above structure, even if an amount of heat generation of the semiconductor element is increased, there can be provided a semiconductor circuit board and a semiconductor device having excellent TCT characteristics.||09-10-2015|
|20150251957||SILICON NITRIDE SINTERED BODY AND WEAR RESISTANT MEMBER USING THE SAME - The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 μm×100 μm unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 μm×100 μm unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.||09-10-2015|
Patent applications by TOSHIBA MATERIALS CO., LTD.