TOKYO UNIVERSITY OF SCIENCE Patent applications |
Patent application number | Title | Published |
20130075754 | SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES - In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH | 03-28-2013 |
20110073995 | SEMICONDUCTOR DEVICE, FABRICATION METHOD OF THE SEMICONDUCTOR DEVICES - In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH | 03-31-2011 |
20090304715 | MODIFIED ANTIBODIES WITH ENHANCED BIOLOGICAL ACTIVITIES - The present inventors generated modified antibodies in which several Fc domains are linked in tandem to the C terminus of the heavy chain, and modified antibodies in which Fc domains are linked in tandem via spacers, and measured the affinity for Fc receptors, CDC activity, and ADCC activity. A previous report indicated that CDC activity is not enhanced by linking multiple Fcs. However, the modified antibodies of the present invention exhibited enhanced ADCC activity. The methods of the present invention enable provision of antibody pharmaceuticals having a marked therapeutic effect. | 12-10-2009 |