TOKAI CARBON KOREA CO., LTD. Patent applications |
Patent application number | Title | Published |
20130168697 | SILICON CARBIDE STRUCTURE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 μm from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives. | 07-04-2013 |
20100089499 | METHOD OF MANUFACTURING METAL COATED WITH CERAMIC - A metal coated with ceramic and a method manufacturing the same. The metal contains chromium. A buffer layer is disposed on the metal, and a silicon carbide (SiC) coating layer is disposed on the buffer layer. The buffer layer has a thermal expansion coefficient between those of the metal and the SiC coating layer. The method includes annealing a metal containing chromium to form a chromium oxide layer on the metal, dissolving polycarbosilane (PCS) in a solvent to form a PCS coating solution, coating the chromium oxide layer with the PCS solution, and annealing the to form an SiC coating. | 04-15-2010 |
20090318655 | POLYCARBOSILANE AND METHOD OF PRODUCING THE SAME - Provided are polycarbosilane and a method of producing the same. The polycarbosilane contains an allyl group, and thus can be cured by UV absorption when not exposed to the air. | 12-24-2009 |
20090191405 | METAL COATED WITH CERAMIC AND METHOD OF MANUFACTURING THE SAME - A metal coated with ceramic and a method manufacturing the same. The metal contains chromium. A buffer layer is disposed on the metal, and a silicon carbide (SiC) coating layer is disposed on the buffer layer. The buffer layer has a thermal expansion coefficient between those of the metal and the SiC coating layer. The method includes annealing a metal containing chromium to form a chromium oxide layer on the metal, dissolving polycarbosilane (PCS) in a solvent to form a PCS coating solution, coating the chromium oxide layer with the PCS solution, and annealing the to form an SiC coating. | 07-30-2009 |