Tela Innovations. Inc., a Delaware Corporation Patent applications |
Patent application number | Title | Published |
20100169847 | STANDARD CELLS HAVING TRANSISTORS ANNOTATED FOR GATE-LENGTH BIASING - A standard cell library is disclosed. The standard cell library contains cells wherein at least one transistor in at least one cell is annotated for gate length biasing. Gate length biasing includes the modification of the gate length, so as to change the speed or power consumption of the modified gate length. The standard cell library is one used in the manufacturing of semiconductor devices (e.g., that result as semiconductor chips), by way of fabricating features defined on one or more layouts of geometric shapes. The annotations serve to identify which ones of the transistor gate features are to be modified before using the geometric shapes for manufacturing the semiconductor device. | 07-01-2010 |
20100169846 | METHODS FOR GATE-LENGTH BIASING USING ANNOTATION DATA - Methods for generating a biased layout for making an integrated circuit are disclosed. One such method includes obtaining a nominal layout defined by one or more cells, where each cell has one or more transistor gate features with a nominal gate length. Then, obtaining an annotated layout. The annotated layout contains information describing gate-length biasing of one or more of the transistor gate features in one or more cells of the nominal layout. A biased layout is produced by modifying the nominal layout using the information from the annotated layout. The biasing modifies a gate length of those transistor gate features identified by the information of the annotated layout. | 07-01-2010 |