|STMicroelectronics S.A. Patent applications|
|Patent application number||Title||Published|
|20150249179||PHOTODETECTOR ON SILICON-ON-INSULATOR - A photodetector is formed in a silicon-on-insulator (SOI) type semiconductor layer. The photodetector includes a first region and a second region of a first conductivity type separated from each other by a central region of a second conductivity type so as to define a phototransistor. A transverse surface of the semiconductor layer is configured to receive an illumination. The transverse surface extends orthogonally to an upper surface of the central region.||09-03-2015|
Patent applications by STMicroelectronics S.A.