SK HYNIX INC.
|SK HYNIX INC. Patent applications|
|Patent application number||Title||Published|
|20150255717||VARIABLE RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME AND METHOD OF DRIVING THE SAME - Provided are a variable resistive memory device, and methods of fabricating and driving the same. The variable resistive memory device includes a plurality of memory cells arranged in a first direction and in a second direction different from the first direction, each of the plurality of memory cells comprising a variable resistor and a selection device serially connected W the variable resistor. A common wiring is electrically connected to first ends of the plurality of memory cells to apply a common reference voltage, Each wiring line of a plurality of wiring lines is electrically connected to second ends of the plurality of memory cells arranged n the plurality of rows oriented in the first direction. A plurality of selection lines are respectively connected to the selection devices of the plurality of memory cells to select any one of the plurality of memory cells via the plurality of wiring lines.||09-10-2015|
|20150249206||ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes semiconductor memory, and the semiconductor memory includes an interlayer dielectric layer formed over a substrate and having a contact hole; a lower contact filled in a part of the contact hole; and a variable resistance element which is disposed over and coupled to the lower contact, and has a first part filled in the contact hole and a second part disposed over the first part and protruding over the interlayer dielectric layer, wherein the first part includes a first metal which has a higher electron affinity than a component included in the second part, and an oxide of the first metal is an insulating material.||09-03-2015|
|20150249095||NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - This technology relates to a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and etch stop layers including metal silicide and formed over the pipe connection gate electrode.||09-03-2015|
|20150248938||DATA STORAGE DEVICE - A data storage device that includes a nonvolatile memory device, a controller suitable for controlling the nonvolatile memory device and for reading and writing data to the nonvolatile memory device, and a power management unit suitable for supplying power to the nonvolatile memory device. The controller may control the power management unit to adjust the power supplied to the nonvolatile memory device.||09-03-2015|
Patent applications by SK HYNIX INC.