SHIN-ETSU HANDOTAI CO., LTD.
|SHIN-ETSU HANDOTAI CO., LTD. Patent applications|
|Patent application number||Title||Published|
|20150249035||METHOD FOR MANUFACTURING SOI WAFER - The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C./min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace.||09-03-2015|
|20150243550||METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing SOI wafer of forming an oxide film on a bond wafer of a semiconductor single crystal substrate, forming an ion implanted layer into the bond wafer by implanting ions of at least one kind of gas in hydrogen and rare gases through the oxide film, bonding together an ion implanted front surface of the bond wafer and base wafer front surface via the oxide film, thereafter delaminating the bond wafer along the ion implanted layer, and thereby fabricating an SOI wafer. The oxide film is formed on the bond wafer such that on a back surface it is made thicker than the oxide film on a bonded face. The method for manufacturing SOI wafer capable of suppressing scratches and SOI film thickness abnormality caused by warped shapes of the SOI and bond wafers after delamination where it has been delaminated by an ion implantation delamination method.||08-27-2015|
Patent applications by SHIN-ETSU HANDOTAI CO., LTD.