Semequip, Inc. Patent applications |
Patent application number | Title | Published |
20140061816 | ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS - A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n. | 03-06-2014 |
20130236384 | METHODS OF PREPARING CLUSTERBORON - New methods are provided for synthesis of ClusterBoron® (B | 09-12-2013 |
20120076475 | ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS - A method of manufacturing a semiconductor device includes the steps of: providing a supply of molecules containing a plurality of dopant atoms into an ionization chamber, ionizing said molecules into dopant cluster ions, extracting and accelerating the dopant cluster ions with an electric field, selecting the desired cluster ions by mass analysis, modifying the final implant energy of the cluster ion through post-analysis ion optics, and implanting the dopant cluster ions into a semiconductor substrate. In general, dopant molecules contain n dopant atoms, where n is an integer number greater than 10. This method enables increasing the dopant dose rate to n times the implantation current with an equivalent per dopant atom energy of 1/n times the cluster implantation energy, while reducing the charge per dopant atom by the factor n. | 03-29-2012 |
20120064705 | VAPORIZER - Vapor delivery systems and methods that control the heating and flow of vapors from solid feed material, especially material that comprises cluster molecules for semiconductor manufacture. The systems and methods safely and effectively conduct the vapor to a point of utilization, especially to an ion source for ion implantation. Ion beam implantation is shown employing ions from the cluster materials. The vapor delivery system includes reactive gas cleaning of the ion source, control systems and protocols, wide dynamic range flow-control systems and vaporizer selections that are efficient and safe. Borane, decarborane, carboranes, carbon clusters and other large molecules are vaporized for ion implantation. Such systems are shown cooperating with novel vaporizers, ion sources, and reactive cleaning systems. | 03-15-2012 |
20110306193 | SYSTEM AND METHOD FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES BY THE IMPLANTATION OF CARBON CLUSTERS - A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: ( | 12-15-2011 |
20110226969 | ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF BORON HYDRIDE CLUSTER IONS - An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form B | 09-22-2011 |
20110217223 | ISOTOPICALLY-ENRICHED BORANES AND METHODS OF PREPARING THEM - The invention provides new methods for synthesis of large boron hydride clusters, e.g., boron hydride molecules of the formula B | 09-08-2011 |
20110195009 | METHODS OF PREPARING CLUSTERBORON - The invention provides new methods for synthesis of ClusterBoron (B | 08-11-2011 |
20110089321 | ION BEAM APPARATUS AND METHOD EMPLOYING MAGNETIC SCANNING - A multipurpose ion implanter beam line configuration comprising a mass analyzer magnet followed by a magnetic scanner and magnetic collimator combination that introduce bends to the beam path, the beam line constructed for enabling implantation of common monatomic dopant ion species cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept an ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight, the magnetic scanner and magnetic collimator being constructed to successively bend the ion beam in the same sense, which is in the opposite sense to that of the bend introduced by the analyzer magnet of the beam line. | 04-21-2011 |
20100320395 | EXTERNAL CATHODE ION SOURCE - An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber. | 12-23-2010 |
20100111801 | METHODS OF SYNTHESIS OF ISOTROPICALLY ENRICHED BOROHYDRIDE AND METHODS OF SYNTHESIS OF ISOTROPICALLY ENRICHED BORANES - The invention provides new methods for the synthesis of isotopically enriched metal borohydrides, metal tetrahydroundecaborate salts, and decaborane from isotopically enriched | 05-06-2010 |
20090206270 | ION BEAM APPARATUS AND METHOD FOR ION IMPLANTATION - A multipurpose ion implanter beam line configuration constructed for enabling implantation of common monatomic dopant ion species and cluster ions, the beam line configuration having a mass analyzer magnet defining a pole gap of substantial width between ferromagnetic poles of the magnet and a mass selection aperture, the analyzer magnet sized to accept art ion beam from a slot-form ion source extraction aperture of at least about 80 mm height and at least about 7 mm width, and to produce dispersion at the mass selection aperture in a plane corresponding to the width of the beam, the mass selection aperture capable of being set to a mass-selection width sized to select a beam of the cluster ions of the same dopant species but incrementally differing molecular weights, the mass selection aperture also capable of being set to a substantially narrower mass-selection width and the analyzer magnet having a resolution at the mass selection aperture sufficient to enable selection of a beam of monatomic dopant ions of substantially a single atomic or molecular weight. | 08-20-2009 |