OneChip Photonics Inc.
|OneChip Photonics Inc. Patent applications|
|Patent application number||Title||Published|
|20120106583||VERTICALLY-COUPLED SURFACE-ETCHED GRATING DFB LASER - A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.||05-03-2012|
|20110217045||CROSSTALK MITIGATION IN OPTICAL TRANSCEIVERS - The invention relates to a method of improving the performance of optical receivers within optical transceivers by compensating for crosstalk, both optical and electrical. Optical crosstalk may arise within the optical receiver from a variety of sources including directly from the optical emitter within, indirectly from the optical emitter via losses, and losses of other received wavelengths within the optical transceiver coupled to the optical receiver. Electrical crosstalk may arise for example between the electrical transmission lines of the optical transmitter and optical receiver. The method comprises providing a secondary optical receiver in predetermined location to the primary optical receiver, the optical receivers being electrically coupled such that the crosstalk induced photocurrent in the secondary optical receiver is subtracted from the photocurrent within the primary optical receiver. The method may be applicable to either monolithic and hybrid optical transceivers.||09-08-2011|
|20110135314||Waveguide Optically Pre-Amplified Detector with Passband Wavelength Filtering - The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.||06-09-2011|
|20090136173||Integrated lateral mode converter - The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.||05-28-2009|
|20090116522||Enhanced efficiency laterally-coupled distributed feedback laser - The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination. In the exemplary embodiment of the invention, this enhanced efficiency technique is applied to the design of a single-mode LC-DFB laser suitable for a monolithic integration with other active and passive functional elements of photonic integrated circuits fabricated by using one-step epitaxial growth.||05-07-2009|
|20080267204||Compact Load Balanced Switching Structures for Packet Based Communication Networks - A switching node is disclosed for the routing of packetized data employing a multi-stage packet based routing fabric combined with a plurality of memory switches employing memory queues. The switching node allowing reduced throughput delays, dynamic provisioning of bandwidth and packet prioritization.||10-30-2008|
Patent applications by OneChip Photonics Inc.